JP6181154B2 - 極端紫外光又は深紫外光の被曝により劣化した撮像センサを修復するシステム及び方法 - Google Patents

極端紫外光又は深紫外光の被曝により劣化した撮像センサを修復するシステム及び方法 Download PDF

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JP6181154B2
JP6181154B2 JP2015505936A JP2015505936A JP6181154B2 JP 6181154 B2 JP6181154 B2 JP 6181154B2 JP 2015505936 A JP2015505936 A JP 2015505936A JP 2015505936 A JP2015505936 A JP 2015505936A JP 6181154 B2 JP6181154 B2 JP 6181154B2
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imaging sensor
repair
light
illumination
irradiation
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JP2015521367A5 (enExample
JP2015521367A (ja
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ギルダルド デルガド
ギルダルド デルガド
ギャリー ジャニク
ギャリー ジャニク
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0228—Control of working procedures; Failure detection; Spectral bandwidth calculation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J2001/0276—Protection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J2001/0276—Protection
    • G01J2001/0285—Protection against laser damage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Toxicology (AREA)
  • Biochemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Signal Processing (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Plasma & Fusion (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2015505936A 2012-04-12 2013-04-12 極端紫外光又は深紫外光の被曝により劣化した撮像センサを修復するシステム及び方法 Active JP6181154B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261623557P 2012-04-12 2012-04-12
US61/623,557 2012-04-12
US13/860,230 US10096478B2 (en) 2012-04-12 2013-04-10 System and method for rejuvenating an imaging sensor degraded by exposure to extreme ultraviolet or deep ultraviolet light
US13/860,230 2013-04-10
PCT/US2013/036335 WO2013155391A1 (en) 2012-04-12 2013-04-12 System and method for rejuvenating an imaging sensor degraded by exposure to extreme ultraviolet or deep ultraviolet light

Publications (3)

Publication Number Publication Date
JP2015521367A JP2015521367A (ja) 2015-07-27
JP2015521367A5 JP2015521367A5 (enExample) 2017-02-16
JP6181154B2 true JP6181154B2 (ja) 2017-08-16

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JP2015505936A Active JP6181154B2 (ja) 2012-04-12 2013-04-12 極端紫外光又は深紫外光の被曝により劣化した撮像センサを修復するシステム及び方法

Country Status (6)

Country Link
US (1) US10096478B2 (enExample)
EP (1) EP2837174A4 (enExample)
JP (1) JP6181154B2 (enExample)
KR (2) KR102161393B1 (enExample)
TW (1) TW201350828A (enExample)
WO (1) WO2013155391A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6239881B2 (ja) * 2013-07-10 2017-11-29 浜松ホトニクス株式会社 画像取得装置及び画像取得方法
US10361105B2 (en) * 2014-12-03 2019-07-23 Kla-Tencor Corporation Determining critical parameters using a high-dimensional variable selection model
JP7067875B2 (ja) * 2017-06-06 2022-05-16 アズビル株式会社 火炎検出システム及び劣化指標算出装置
CN117098978A (zh) * 2021-05-11 2023-11-21 极光先进雷射株式会社 线传感器的劣化评价方法、谱计测装置和计算机可读介质

Family Cites Families (16)

* Cited by examiner, † Cited by third party
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US4680616A (en) * 1986-05-09 1987-07-14 Chronar Corp. Removal of defects from semiconductors
JP2000223541A (ja) * 1999-01-27 2000-08-11 Hitachi Ltd 欠陥検査装置およびその方法
US6831679B1 (en) * 2000-02-17 2004-12-14 Deepsea Power & Light Company Video camera head with thermal feedback lighting control
JP2004014710A (ja) 2002-06-05 2004-01-15 Nikon Corp 計測方法、被検光学系の調整方法、投影露光方法、撮像装置、計測装置、被検光学系の調整装置、投影露光装置および撮像装置の製造方法
US7110113B1 (en) * 2002-11-13 2006-09-19 Kla-Tencor Technologies Corporation Film measurement with interleaved laser cleaning
US7525659B2 (en) * 2003-01-15 2009-04-28 Negevtech Ltd. System for detection of water defects
GB2399971B (en) 2003-01-22 2006-07-12 Proneta Ltd Imaging sensor optical system
US20070030466A1 (en) * 2004-08-09 2007-02-08 Nikon Corporation Exposure apparatus control method, exposure method and apparatus using the control method, and device manufacturing method
JP5042494B2 (ja) * 2005-12-22 2012-10-03 インテル コーポレイション 散乱光の角度分布を使ったマスクブランクの欠陥の検出および特性評価
US7515822B2 (en) 2006-05-12 2009-04-07 Microsoft Corporation Imaging systems' direct illumination level adjusting method and system involves adjusting operation of image sensor of imaging system based on detected level of ambient illumination
US20080058602A1 (en) 2006-08-30 2008-03-06 Karl Storz Endovision Endoscopic device with temperature based light source control
US20110102565A1 (en) * 2006-09-29 2011-05-05 Xinghua Wang Spectral Imaging System
US8514278B2 (en) 2006-12-29 2013-08-20 Ge Inspection Technologies Lp Inspection apparatus having illumination assembly
US7619227B2 (en) 2007-02-23 2009-11-17 Corning Incorporated Method of reducing radiation-induced damage in fused silica and articles having such reduction
US8559014B2 (en) * 2009-09-25 2013-10-15 Hwan J. Jeong High-resolution, common-path interferometric imaging systems and methods
KR101793316B1 (ko) * 2011-03-16 2017-11-02 케이엘에이-텐코 코포레이션 박막 스펙트럼 순도 필터 코팅을 갖는 영상 센서를 사용하는 ｅｕｖ 화학선 레티클 검사 시스템

Also Published As

Publication number Publication date
EP2837174A1 (en) 2015-02-18
JP2015521367A (ja) 2015-07-27
TW201350828A (zh) 2013-12-16
KR20190132699A (ko) 2019-11-28
EP2837174A4 (en) 2016-01-06
KR20140143228A (ko) 2014-12-15
US10096478B2 (en) 2018-10-09
KR102161393B1 (ko) 2020-09-29
WO2013155391A1 (en) 2013-10-17
US20130295695A1 (en) 2013-11-07

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