TW201345729A - 用於暫時性基板支撐件及支撐件分離之層合物體、方法及材料 - Google Patents
用於暫時性基板支撐件及支撐件分離之層合物體、方法及材料 Download PDFInfo
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Abstract
本發明提供用於暫時性基板支撐件之層合物體、方法及材料。層合物體可在進一步加工(諸如氣相沈積或研磨薄化)期間固持及保護薄脆基板,諸如可撓性玻璃或薄半導體晶圓。在一個實施例中,所提供之層合物體包括支撐件、安置於支撐件上之離型層、安置於離型層上且與離型層接觸之接合層、及安置於接合層上且與接合層接觸之基板。離型層可包括丙烯酸系黏著劑及黏著改良劑。
Description
本發明係關於加工期間之暫時性基板支撐件。
在多個領域中,加工易碎的、貴重的或難以加工的基板(諸如玻璃、薄膜或半導體晶圓)可為受人關注的。舉例而言,在電子工業中,重要的是可固持基板(諸如玻璃或半導體晶圓)以用於進一步加工(諸如真空沈積、層合、研磨或其他合乎需要的加工)。通常,可藉由形成具有支撐件之層合物或支撐件來固持該等基板。在所需加工後,重要的是能夠在不損傷基板的情況下自支撐件移除基板。
舉例而言,在半導體工業中,正嘗試進一步降低半導體晶圓之厚度以達成降低半導體封裝之厚度的目標以及藉由晶片層合技術進行之高密度製造。藉由在半導體晶圓之含有圖案形成電路之表面的反面上進行所謂背面研磨來實現厚度降低。通常,在研磨晶圓背面或表面且在運輸晶圓時僅用背面研磨保護帶固持晶圓之習知技術中,由於諸如經研磨之晶圓之厚度不均勻或研磨後具有保護帶之晶圓翹曲之問題,實務中厚度降低僅可達到約150微米(μm)之厚度。舉例而言,日本未審查專利公開案(Kokai)第6-302569號揭示一種方法,其中經壓敏性丙烯酸酯膠帶將晶圓固持於環形框架上,研磨固持於框架上之此晶
圓的後表面且將晶圓運輸至下一步驟。然而,與未遇到上述不均勻或翹曲問題即可獲得之當前晶圓厚度水準相比,該方法尚未獲得顯著改良。
美國專利第7,534,498號(Noda等人)揭示用於固持待研磨基板(諸如矽晶圓)之層合物體,其固定於支撐件上且易於與該支撐件分離。層合物體包括光熱轉化層,其包含吸光劑及可熱分解樹脂。在研磨基板表面(其為與接合層接觸之表面的背面)後,可藉由照射光柵雷射束通過光透射層來照射層合物體以使光熱轉化層分解及分離基板與光透射支撐件。
因此,需要用於加工(諸如電鍍、濺鍍或氣相沈積於玻璃基板上或研磨矽晶圓背面)期間之暫時性基板支撐件之方法及材料,其具有經濟性且對使用者友好。需要在加工基板時與基板一起形成層合物體且接著無需照射樣品便能夠自暫時性支撐件移除所加工之基板。
在一個態樣中,提供層合物體,其包括支撐件、安置於支撐件上之離型層、安置於離型層上且與離型層接觸之接合層;及安置於接合層上且與接合層接觸之基板,其中離型層包含適量黏著改良劑。在一些實施例中,支撐件可為透光的。在其他實施例中,支撐件可包括阻光性基板型支撐件。阻光性基板為不透明或半透明且實質上阻斷可見輻射之透射。在一些實施例中,阻光性基板可讓所選可見光波長之光透射,同時實質上阻斷其他可見光波長之透射且因此其呈現彩色。阻光性基板之實例可包括金屬、合金、陶瓷及半導體。
離型層可包括由至少一種具有自由基反應基團之單體(諸如(甲基)丙烯酸烷基酯)聚合製成的聚合物。在一些實施例中,離型層可包括黏著改良基團,在一些實施例中,其可為聚矽氧(甲基)丙烯酸酯。在一些實施例中,接合層中可存在適量黏著改良劑。在一些實施例
中,離型層中黏著改良劑之量可與接合層中黏著改良劑之量不同。所提供之層合物體可包括待固持以進行進一步加工之基板。
在另一態樣中,提供層合物體,其包括支撐件、安置與支撐件上且與支撐件接觸之接合層、安置於接合層上且與接合層接觸之離型層及安置於離型層上之基板。接合層包括適量黏著改良劑,在一些實施例中,其可為聚矽氧(甲基)丙烯酸酯。在一些實施例中,離型層中可存在適量黏著改良劑。在一些實施例中,離型層中黏著改良劑之量可與接合層中黏著改良劑之量不同。在一些實施例中,當離型層與接合層交聯時,其可充當可使基板與支撐件暫時性結合之單一組件。所提供之層合物體可包括待固持以進行進一步加工之基板。
在另一態樣中,提供固持基板以進行進一步加工之方法,其包括在支撐件上提供暫時性、可移除之結合層,使結合層與基板層合以形成層合物,對層合物進行至少一個其他加工步驟及在不損傷基板情況下自結合層剝離基板。至少一個其他加工步驟可使基板暴露於高於約200℃之溫度。
在另一態樣中,提供製造層合物體之方法,其包括在基板上塗佈接合層,在支撐件上塗佈離型層及使包含接合層之基板與包含離型層之支撐件層合。離型層、接合層或其兩者可包括黏著改良劑,在一些實施例中,其可為聚矽氧(甲基)丙烯酸酯。在一些實施例中,所提供之方法係在真空中進行。
在本發明中:「光化輻射」係指可產生光化反應之任何電磁輻射且包括紫外線、可見光及紅外線輻射;「安置於……上」係指兩個層彼此直接接觸或各與例如可改良該兩個層之表面性質的插入層直接接觸;「透光性支撐件」係指可允許大量(足以引起光化反應)光化輻射
經其透射之材料;「(甲基)丙烯酸酯」係指基於丙烯酸或甲基丙烯酸之酯;「熱塑性」係指聚合物在加熱時可逆地轉化為液體且在冷卻時凍結為完全玻璃態;「熱固性」或「熱固」係指聚合材料不可逆地固化;及「UV可固化」係指由紫外線(UV)及/或可見光輻射引起之單體或寡聚物之聚合。
所提供之層合物體及製造其之方法提供用於操作(諸如研磨矽晶圓背面或氣相沈積於薄玻璃基板上)期間之基板支撐件。使用包括適量黏著改良劑之離型層可提供用於具有不同化學性質之基板之支撐件,因為其提供用於在加工後移除基板之定製層(customized layer)。此外,所提供之層合物體可提供基板自支撐件之差異性釋放,從而可在不對基板施加不必要應力情況下實現高通量剝離。此在基板極薄及極脆時尤其重要。
以上發明內容不意欲描述所揭示之本發明之每種建構之各實施例。以下圖式簡單說明及實施方式更特定地舉例說明說明性實施例。
102‧‧‧基板
104‧‧‧焊球/焊料凸塊
106‧‧‧離型層
108‧‧‧接合層
112‧‧‧支撐件
114‧‧‧分離界面
202‧‧‧基板
204‧‧‧焊球/焊料凸塊
206‧‧‧接合層
208‧‧‧離型層
212‧‧‧基板
214‧‧‧分離界面
302‧‧‧基板
305‧‧‧支撐件
320‧‧‧真空黏著裝置
321‧‧‧真空室
322‧‧‧支撐部分
323‧‧‧固持/釋放構件
324‧‧‧管道
325‧‧‧降壓裝置
326‧‧‧軸
327‧‧‧接觸表面部分
328‧‧‧片彈簧
329‧‧‧固持爪
402‧‧‧基板
403‧‧‧接合層
480‧‧‧膠帶
圖1為所提供之層合物之實施例之側視橫截面圖。
圖2為所提供之層合物之另一實施例之側視橫截面圖。
圖3a及3b為展示適用於製造所提供之層合物之真空黏著裝置的橫截面圖。
圖4為展示如何自晶圓剝離接合層之示意圖。
以下描述中參考一組附圖,該等附圖形成本說明書之一部分且為了說明若干特定實施例而展示。應理解,本發明涵蓋其他實施例且其可在不偏離本發明之範疇或精神的情況下產生。因此,以下詳細描
述無限制含義。
除非另有說明,否則說明書及申請專利範圍中所使用之所有表示特徵尺寸、量、物理性質之數字均應理解為在一切情況下均由術語「約」修飾。因此,除非有相反地說明,否則說明書及隨附申請專利範圍中闡述之數值參數為近似值,其可視熟習此項技術者利用本文中揭示之教示內容設法獲得之所需性質而變化。使用端點表述之數值範圍包括該範圍內的所有數字(例如1至5包括1、1.5、2、2.75、3、3.80、4及5)及該範圍內的任何範圍。
圖1為所提供之層合物體100之實施例之側視橫截面圖。層合物體100包括基板102,若該基板為矽晶圓或半導體晶圓,則其可包括焊球或焊料凸塊104。接合層108與離型層106接觸且安置於離型層106與基板102之間。離型層106包括適量黏著改良劑。接合層108可囊封任何表面不規則物體,諸如圖1中所示之焊料凸塊104。離型層106安置於支撐件112上。藉由改變所包括之黏著改良劑的量來調節離型層106之黏著性,使得在向支撐件112施加剝離力時層合物在分離界面114處分離。
圖2為所提供之層合物體200之另一實施例之側視橫截面圖。層合物體200包括基板202,若該基板為矽晶圓或半導體晶圓,則其可包括不規則形,諸如焊球或焊料凸塊204。如圖2中所示,離型層208安置於晶圓202之電路一側(焊料凸塊一側)上且可囊封焊料凸塊204。接合層206與離型層208接觸且安置於離型層208與基板212之間。調節此實施例中離型層208之黏著性,使得在向基板212施加剝離力時層合物在分離界面214處分離。
層合物體包括支撐件。支撐件可具透光性或阻光性。若具透光性,則透光性支撐件可為能夠透射光化輻射能量(諸如來自雷射或雷射二極體之光化輻射能量)的材料。支撐件之透光率不受限制,只要
其不阻止實用強度級輻射能量透射至潛伏離型層中從而實現潛伏離型層之分解(若潛伏離型層經光活化)即可。然而,可見光透射率通常為例如50%或50%以上。透光性支撐件通常具有足夠高的剛性且支撐件之抗撓剛度較佳為2×10-3(Pa.m3)或2×10-3(Pa.m3)以上,更佳為3×10-2(Pa.m3)或3×10-2(Pa.m3)以上。適用透明透光性支撐件之實例包括玻璃板及丙烯酸板。透明透光性支撐件亦可包括耐熱玻璃,諸如硼矽玻璃(可由PYREX及TENPAX獲得)及鹼土鋁矽酸硼玻璃(諸如CORNING Eagle XG)。支撐件亦可為不透明或可透射小於約50%之可見光輻射。不透明支撐件之實例可包括半導體晶圓、陶瓷、金屬或僅透射有限頻率之可見光的透光性支撐件。在使用UV接合層情況下,支撐件通常透射紫外線輻射。
在一個實施例中,所提供之層合物體具有安置於支撐件上的適量離型層。接合層(通常為黏著層)與離型層接觸。此外,如圖1中所示,離型層中可存在適量黏著改良劑,其可經調節以使分層時離型層與支撐件之間存在分離界面。所提供之接合層可對有機及無機基板材料呈實質上惰性(不起反應)且可在相對較高溫度(例如260℃以上無鉛回流焊接條件)下保持穩定。離型層對有機及無機基板材料均應具有足夠黏著性。
離型層與安置於透光性支撐件上之潛伏離型底層結合形成層合物體之用途揭示於同在申請中之共同擁有的2012年1月30日申請之名為「Apparatus,Hybrid Laminated Body,Method and Materials for Temporary Substrate Support」之臨時專利申請案U.S.S.N.61/592,148中。所揭示之層合物體及其中描述之方法以全文引用的方式併入本文中。
所提供之層合物體具有安置於離型層上之接合層。在一些實施例中,接合層為位於基板與離型層之間且與基板及離型層接觸之材
料。接合層通常為黏著劑。接合層可為熱塑性黏著材料,諸如聚酯、聚醯亞胺、聚碳酸酯、聚胺基甲酸酯、聚醯或天然或合成橡膠。接合層可為或可不為交聯或可交聯的。接合層亦可為熱固性材料,諸如可固化聚合物或黏著劑。可用作本發明所提供之層合物中之接合層的黏著劑之實例包括藉由使橡膠、彈性體或其類似物溶解於溶劑中而獲得之基於橡膠之黏著劑;基於(甲基)丙烯酸酯、環氧樹脂、胺基甲酸酯或其類似物之一元熱固性黏著劑;基於環氧樹脂、胺基甲酸酯、丙烯醯基或其類似物之二元熱固性黏著劑;熱熔融黏著劑;基於丙烯醯基、環氧樹脂或其類似物之光(紫外線(UV)及/或可見光)或電子束可固化黏著劑;及水分散型黏著劑。宜使用藉由向(1)具有可聚合乙烯基之寡聚物,諸如胺基甲酸酯(甲基)丙烯酸酯、環氧樹脂(甲基)丙烯酸酯或聚酯(甲基)丙烯酸酯及/或(2)丙烯酸或甲基丙烯酸單體中添加光聚合起始劑及視需要使用之添加劑而獲得之光可固化黏著劑。添加劑之實例包括增稠劑、增塑劑、分散劑、填充劑、阻燃劑及熱穩定劑。一元熱固性黏著劑之實例為使用包括(甲基)丙烯酸酯單體(含有熱活化自由基引發劑,諸如過氧化物或重氮化合物)之混合物聚合之黏著劑。
在所提供之層合物進一步包含與離型層接觸之基板的實施例中,基板可為例如難以藉由習知方法加工之脆性材料。其實例包括半導體晶圓,諸如矽及砷化鎵、水晶晶圓、藍寶石及玻璃。基板可具有表面不規則形。舉例而言,當基板為半導體晶圓時,其可具有電路側面及背面。表面一側可包括電路元件,諸如跡線、積體電路、電子組件及導電性連接器,諸如焊球或焊料凸塊。電路一側上亦可包括其他電連接裝置,諸如插腳、插口、電襯墊。
在一些實施例中,接合層可用於將待加工基板經離型層固定至支撐件。在藉由分層使基板與支撐件分離後,獲得基板以及上面具有
接合層及離型層之支撐件。因此,接合層必須易於與基板分離,諸如藉由剝離。因此,接合層具有高足以使基板經離型層固定至支撐件,同時低足以允許自基板分離之黏著強度。可用作本發明之接合層中之黏著劑之實例包括藉由使橡膠、彈性體或其類似物溶解於溶劑中而獲得之基於橡膠之黏著劑;基於環氧樹脂、胺基甲酸酯或其類似物之一元熱固性黏著劑;基於環氧樹脂、胺基甲酸酯、丙烯醯基或其類似物之二元熱固性黏著劑;熱熔融黏著劑;基於丙烯醯基、環氧樹脂或其類似物之紫外線(UV)或電子束可固化黏著劑;及水分散型黏著劑。
基板可在一個側面上具有凸凹不平部分,諸如電路圖案或其他外形特徵。對於將填充於待加工基板之凹凸不平部分中之接合層,用於接合層之黏著劑通常在塗佈及層合期間呈液態且其在塗佈及層合操作溫度(例如25℃)下之黏度較佳小於10,000厘泊(cps)。在稍後描述之各種方法中,通常藉由旋塗方法塗佈此液體黏著劑。通常使用UV可固化黏著劑或可見光可固化黏著劑,其可使接合層之厚度均勻,且此外由於以上提及之原因而使加工速率較高。
在溶劑型黏著劑情況下移除黏著劑之溶劑之後、在可固化黏著劑情況下固化之後或在熱熔融黏著劑情況下標準溫度凝固之後,在使用條件下黏著劑之儲存模數通常可為25℃下100 MPa或100 MPa以上及50℃下10 MPa或10 MPa以上。在此彈性模數下,可防止待研磨之基板由於研磨期間施加之應力而翹曲或扭曲且可均勻研磨為超薄基板。如本文中所用之儲存模數或彈性模數可例如用22.7 mm×10 mm×50 μm之黏著劑樣品尺寸以拉伸模式在1 Hz頻率、0.04%應變及5℃/分鐘之溫度勻變速率下量測。此儲存模數可使用Rheometrics,Inc.製造之SOLIDS ANALYZER RSA II(商標)量測。襯底必須具有足夠高可撓性以允許可藉由剝離使接合層與基板分離。
接合層之厚度不受特定限制,只要其可確保待研磨基板之研磨
所需之厚度均勻性及在自層合物體移除支撐件後自晶圓剝離接合層所需之撕裂強度且可充分吸附基板表面上之凹凸不平部分即可。接合層之厚度通常為約10 μm至約150 μm,較佳為約25 μm至約100 μm。
當接合層包含可固化(甲基)丙烯酸酯聚合物時,其可進一步包括適量黏著改良劑。接合層可包括大於約0.1重量%之量或小於約6.0重量%之量的可固化(甲基)丙烯酸酯黏著改良劑。在一些實施例中,可固化(甲基)丙烯酸酯黏著改良劑可為經(甲基)丙烯酸酯基或甲基丙烯酸酯基中之至少一者取代之聚矽氧聚合物。通常,可固化(甲基)丙烯酸酯黏著改良劑可在固化前溶於可固化(甲基)丙烯酸酯聚合物中。此外,可固化(甲基)丙烯酸酯黏著改良劑與可固化(甲基)丙烯酸酯聚合物組合之黏度在環境溫度下可小於約10,000且更佳小於5,000厘泊。舉例而言,可固化(甲基)丙烯酸酯黏著改良劑可為(甲基)丙烯酸酯改質之聚矽氧聚合物,諸如得自Cytec Industries(West Paterson,NJ)之EBECRYL 350、得自Sartomer Company(Exton,PA)之CN9800或可自Evonik Industries(Essen,Germany)獲得之TEGO RAD 2250、TEGO RAD 2500、TEGO RAD 2650或TEGO RAD 2700。
離型層可包括由至少一種具有自由基反應基團之單體聚合製成的聚合物。在一些實施例中,該至少一種具有自由基反應基團之單體可包括(甲基)丙烯酸烷基酯。在一些實施例中,適用聚合物係衍生自(甲基)丙烯酸烷基酯,其可包括約75至約95重量份之在烷基中具有1至14個碳之(甲基)丙烯酸烷基酯。(甲基)丙烯酸烷基酯可包括脂族、環脂族或芳族烷基。適用(甲基)丙烯酸烷基酯(亦即丙烯酸烷基酯單體)包括非第三烷基醇之直鏈或分支鏈單官能性(甲基)丙烯酸酯或甲基丙烯酸酯,其烷基具有1至14個且詳言之1至12個碳原子。適用單體包括例如(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸甲酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸戊
酯、(甲基)丙烯酸正辛酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸己酯、(甲基)丙烯酸正壬酯、(甲基)丙烯酸異戊酯、(甲基)丙烯酸正癸酯、(甲基)丙烯酸異癸酯、(甲基)丙烯酸十二烷基酯、(甲基)丙烯酸異冰片酯、(甲基)丙烯酸環己酯、甲基(丙烯酸苯酯)、甲基(丙烯酸苯甲酯)及(甲基)丙烯酸2-甲基丁酯及其組合。
其他適用自由基反應基團可包括可共聚合極性單體,諸如含有羧酸、醯胺、胺基甲酸酯或脲官能基之丙烯酸單體。亦可包括弱極性單體,如N-乙烯基內醯胺。適用N-乙烯基內醯胺為N-乙烯基己內醯胺。通常,黏著劑中之極性單體內含物可包括小於約5重量份或甚至小於約3重量份之一或多種極性單體。可合併有較高含量(例如10重量份或10重量份以下)之僅具有弱極性之極性單體。適用羧酸包括丙烯酸及甲基丙烯酸。適用醯胺包括N-乙烯基己內醯胺、N-乙烯基吡咯啶酮、(甲基)丙烯醯胺、N-甲基(甲基)丙烯醯胺、N,N-二甲基丙烯醯胺、N,N-二甲基甲基(丙烯醯胺)及正辛基(甲基)丙烯醯胺。
該至少一種具有自由基反應基團之單體可包括含羥基單體,諸如(甲基)丙烯酸2-羥基乙酯、(甲基丙烯酸3-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、2-羥基乙基丙烯醯胺及N-羥基丙基丙烯醯胺。亦可使用衍生自環氧乙烷或環氧丙烷之基於二醇之羥基官能性單體。其他可聚合自由基反應基團(諸如乙烯基)亦可包括於本發明之範疇內。含乙烯基單體可包括鹵化乙烯、鹵化亞乙烯;乙烯醚,諸如乙基乙烯醚、正丁基乙烯醚、異丁基乙烯醚、第三丁基乙烯醚、環己基乙烯醚、2-乙基己基乙烯醚及十二烷基乙烯醚;二乙烯醚,諸如1,4-丁二醇二乙烯醚、二乙二醇二乙烯醚;羥基乙烯化合物,諸如羥丁基乙烯醚及1,4-環己烷二甲醇單乙烯醚。
離型層亦可包括適量黏著改良劑。黏著改良劑可包括適用於接
合層中的相同材料。在一些實施例中,離型層及接合層可包括不同量的黏著改良劑。通常,離型層中所含黏著改良劑量大於接合層。接合層可不添加有黏著改良劑。當離型層為丙烯酸系黏著劑系統且黏著改良劑為聚矽氧(甲基)丙烯酸酯時,離型層中之聚矽氧(甲基)丙烯酸酯含量可佔離型層總量之至多0.5重量%、至多1.0重量%、至多2.0重量%、至多3.0重量%或甚至至多5.0重量%。可調節離型層中黏著改良劑之量以在基板分層時在所需位置處產生分離界面。舉例而言,在圖1說明之實施例中,所需分離界面114之位置位於離型層與支撐件之間,而在圖2說明之實施例中,所需分離界面214位於離型層與基板之間而非接合層與支撐件之間。
適用類型之聚矽氧(甲基)丙烯酸酯黏著改良劑可為具有結構(I)之經有機物改質之(甲基)丙烯酸酯聚矽氧:
其中R1及R2為基於烴之基團,諸如聚環氧乙烷、聚環氧丙烷及聚氧化四甲基醚、C2-C12脂族基、C2-C12環脂族基、芳族基及基於聚酯之基團,且R3為H或CH3。例示性材料為經聚(環氧烷)改質之聚矽氧(甲基)丙烯酸酯,例如可自Evonik Industries,Mobile,Alabama獲得之TEGORAD 2250、2100、2200、2300及可自Cytec,Woodland Park,N.J獲得之EBECRYL 350,經聚酯改質之聚矽氧(甲基)丙烯酸酯,諸如可自Miwon Specialty Chemicals,South Korea獲得之MIRAMER SIP 900及經芳族環氧樹脂改質之聚矽氧(甲基)丙烯酸酯,例如亦可自Evonik
Industries獲得之ALBIFLEX 712。其他合適的經(甲基)丙烯酸酯改質之聚矽氧聚合物為得自Siltech Corporation(Toronto,Canada)之商標SILMER ACR之直鏈、雙官能性水可分散型(甲基)丙烯酸酯聚矽氧預聚物。該等預聚物之實例為SILMER ACR Di-1508、SILMER ACR Di-2510、SILMER ACR Di-1010、SILMER ACR Di-2010及SILMER ACR Di-4515。其他合適的經(甲基)丙烯酸酯改質之聚矽氧聚合物包括反應性塗料添加劑,諸如得自Momentive Performance Materials,Albany NY之COATOSIL 3503及COATOSIL 3509。該等改質之聚矽氧(甲基)丙烯酸酯可改良接合層及離型層中之相容性。改良之相容性通常可更有效地防止在層狀體之任一加工步驟中發生過早分層且在剝離過程中仍可容易移除。接合層及離型層中之黏著改良劑之典型含量為0.1至10重量%。該等含量更通常為0.1%至4%。
離型層、接合層或該兩個層亦可包括消泡劑。消泡劑可包含全氟醚單體。已發現向黏著劑組合物(諸如所提供之接合層)中添加少量該等單體可防止鼓泡,尤其在層合物之真空形成期間。全氟醚單體可以足以選擇性降低接合層與基板或支撐件之黏著的量使用。此外,如申請人共同擁有之2011年9月30日申請之申請案U.S.S.N.13/249,501(Larson等人)中所描述。單體用量通常為可固化組分之至少0.05重量%且不超過黏著劑組分之5重量%。
除可固化(甲基)丙烯酸酯聚合物及適量丙烯酸黏著改良劑外,接合層亦可包括例如光引發劑。黏著接合層可包括光引發劑,例如約0.5重量%至約5重量%範圍內之量的光引發劑。適用光引發劑包括已知適用於自由基光固化多官能性(甲基)丙烯酸酯之光引發劑。例示性光引發劑包括安息香(benzoin)及其衍生物,諸如α-甲基安息香;α-苯基安息香;α-烯丙基安息香;α-苯甲基安息香;安息香醚,諸如安息香二甲醚(benzil dimethyl ketal)(例如得自BASF,Florham Park,NJ之
「IRGACURE 651」)、安息香甲醚、安息香乙醚、安息香正丁醚;苯乙酮及其衍生物,諸如2-羥基-2-甲基-1-苯基-1-丙酮(例如得自BASF之「DAROCUR 1173」)及1-羥基環己基苯基酮(例如得自BASF之「IRGACURE 184」);2-甲基-1-[4-(甲硫基)苯基]-2-(4-嗎啉基)-1-丙酮(例如得自BASF之「IRGACURE 907」);2-苯甲基-2-(二甲基胺基)-1-[4-(4-嗎啉基)苯基]-1-丁酮(例如得自BASF之「IRGACURE 369」)及亞膦酸酯衍生物,諸如2,4,6-三甲基苯甲醯基苯基亞膦酸乙酯(例如得自BASF,Florham Park,NJ之「TPO-L」)。
其他適用光引發劑包括例如新戊偶姻乙醚(pivaloin ethyl ether)、茴香偶姻乙醚、蒽醌類(例如蒽醌、2-乙基蒽醌、1-氯蒽醌、1,4-二甲基蒽醌、1-甲氧基蒽醌或苯甲蒽醌)、鹵甲基三嗪、二苯甲酮及其衍生物、錪鹽及鋶鹽、鈦錯合物,諸如雙(η5-2,4-環戊二烯-1-基)-雙[2,6-二氟-3-(1H-吡咯-1-基)苯基]鈦(例如得自BASF之「CGI 784DC」);鹵甲基-硝基苯(例如4-溴甲基硝基苯)、單醯基膦及雙醯基膦(例如「IRGACURE 1700」、「IRGACURE 1800」、「IRGACURE 1850」及「DAROCUR 4265」)。通常,引發劑用量在0.1重量%至10重量%範圍內,較佳在2重量%至4重量%範圍內。
除可固化(甲基)丙烯酸酯聚合物、可固化(甲基)丙烯酸酯黏著改良劑及光引發劑外,接合層亦可包括例如反應性稀釋劑。黏著接合層可包括例如約10重量%至約70重量%範圍內之量的反應性稀釋劑。反應性稀釋劑可用於調節固化組合物之黏度及/或物理性質。合適反應性稀釋劑之實例包括單官能性及多官能性(甲基)丙烯酸酯單體(例如二(甲基)丙烯酸乙二醇酯、二(甲基)丙烯酸己二醇酯、二(甲基)丙烯酸三乙二醇酯、三羥甲基丙烷三(甲基)丙烯酸酯、二(甲基)丙烯酸三丙二醇酯、(甲基)丙烯酸四氫呋喃甲酯、苯氧基乙基丙烯酸酯)、乙烯醚(例如丁基乙烯醚)、乙烯酯(例如乙酸乙烯酯)及苯乙烯類單體(例如苯
乙烯)。
在另一態樣中,提供層合物體,其包括支撐件、安置於支撐件上且與支撐件接觸之接合層及安置於接合層上之基板,其中接合層包含適量黏著改良劑。安置於其上意謂接合層與支撐件之間可存在一或多個改變表面或黏著性質之插入層。如圖2中說明,所提供之層合物體可進一步包括定位於或位於接合層與基板之間且與接合層及基板接觸的離型層。離型層描述於上文中且亦包括適量的如上文揭示之黏著改良劑。離型層中黏著改良劑之量可大於接合層中黏著改良劑之量。
在一些實施例中,諸如圖2中之實施例,離型層及接合層可由相同黏著性基質材料製成。在一些實施例中,其可具有不同量的黏著改良劑添加劑以控制分離界面之位置。在一些其他實施例中,例如當基板及支撐件係由相同材料(各為例如玻璃或半導體晶圓)製成時,離型層及接合層可為具有相同量黏著改良劑之完全相同材料。在一些實施例中,離型層及接合層可為同一個層。在該等實施例中,僅利用一個接合層。
離型層及接合層可經交聯以變為單一組件,從而可提供基板與支撐件之間的暫時性結合。若針對基板及支撐件之表面能適當調節離型層及接合層(若存在)中黏著改良劑之量,則藉由使用裝置或僅手動剝離便可容易地自支撐件移除基板。
在製造所提供之層合物體期間,重要的是防止不期望的外來物質(諸如空氣)進入各層之間或自層合物體中之任一個層釋放。為防止氣泡,可如下文所描述在真空裝置中製造層合物體。在製造圖1中展示之層合物體100之情況下,可考慮例如以下方法。首先,可藉由此項技術中已知的任一種方法在支撐件112上塗佈離型層106之前驅體塗料溶液且視情況進行固化。可在基板102上之非研磨一側或電路一側塗佈接合層108。接著可使經塗佈之支撐件112與經塗佈之基板102層
合在一起以形成所提供之層合物體。該層合物體之形成通常係在真空中進行以防止空氣進入各層之間。此可藉由例如修改真空黏著裝置(諸如美國專利第6,221,454號(Kazuta等人)中描述之裝置)來達成。
所提供之層合物體可用於在基板經受加工時固持基板。該等加工可包括例如背面研磨、塗佈(包括真空塗佈)、氣相沈積、蝕刻、剝離、化學處理、退火、拋光、消除應力、結合或附著、光學量測及電學測試。所涵蓋之加工可使基板暴露於高於約150℃、高於約200℃或甚至高於約300℃之溫度。
提供固持基板以進行進一步加工之方法,其包括在支撐件上提供暫時性、可移除之結合層,使結合層與基板層合以形成層合物,對層合物進行至少一個其他加工步驟,及在不損傷基板之情況下自結合層剝離基板。結合層可包括如上文所描述之接合層及離型層。在一些實施例中,結合層為單一組件,其包括接合層與離型層交聯在一起之組合。離型層或接合層中之至少一者可包括適量黏著改良劑,在一些實施例中,其可為聚矽氧(甲基)丙烯酸酯。在一些實施例中,固持基板之方法可包括在待進一步加工之基板上提供暫時性、可移除之結合層,使結合層與支撐件層合,對層合物進行至少一個其他加工步驟及在不損傷基板情況下自結合層剝離基板。
在一個態樣中,本發明之方法參考諸圖描述於下文中。圖3a及3b為適用於製造本發明之一個實施例之層合物體的真空黏著裝置之橫截面圖。真空黏著裝置320包含真空室321;提供於真空室321中之支撐部分322,基板302或支撐件305安置於支撐部分322上;及提供於真空室321中且在支撐部分322之上部沿垂直方向可移動之固持/釋放構件323,其固持支撐件305或基板302中之另一者。真空室321經管道324連接至降壓裝置325,從而可降低真空室321內之壓力。固持/釋放構件233具有在垂直方向上可上下移動之軸326、提供於軸326之末端的
接觸表面部分327、提供於接觸表面部分327之周邊的片彈簧328及自各片彈簧328延伸之固持爪329。如圖3a中所示,當片彈簧328與真空室321之上表面接觸時,片彈簧328壓縮且固持爪329被導向垂直方向以在圍緣處固持支撐件305或晶圓302。另一方面,如圖3b中所示,當軸326下壓且支撐件305或晶圓302與分別安置於支撐部分上之晶圓302或支撐件305緊靠時,固持爪329與片彈簧328一起釋放以疊置支撐件305及晶圓302。
可使用真空黏著裝置320如下製造所提供之層合物體。首先,如上文所描述,在支撐件305上提供離型層。單獨製造待層合之基板。在基板302上提供接合層。接著,如圖3a中所示將支撐件305及晶圓302安置於真空黏著裝置320之真空室321中,藉由降壓裝置降低壓力,如圖3b中所示將軸326下壓以使晶圓層狀或層合且在暴露於空氣後,視需要使黏著劑固化以獲得所提供之層合物體。
在加工基板後,可使支撐件與基板分離。在一些實施例中,在分離後,基板具有接合層及與接合層連接之離型層。圖4為展示如何剝離接合層/離型層之示意圖。可使用膠帶480移除接合層/離型層403。與基板402與接合層403之間的黏結相比,膠帶480可與接合層/離型層403產生更強的黏結。
本發明有效用於例如以下應用。
1.用於高密度封裝之層狀CSP(晶片級封裝)
本發明適用於例如稱為系統級封裝(system-in-package)之裝置形式,其中複數個大規模積體(LSI)裝置及被動部分收納於單一封裝中以實現多功能或高效能,且稱為堆疊型多晶片封裝。根據本發明,該等裝置可以高良率可靠地製造25 μm或25 μm以下之晶圓。
2.需要高功能及高速加工之直通型CSP
在此裝置中,晶片係由直通型電極連接,藉此縮短配線長度且
改良電性質。為解決技術問題,諸如形成用於形成直通型電極之通孔及將銅嵌入通孔中,可進一步降低晶片之厚度。在使用本發明之層狀體依序形成具有該組態之晶片的情況下,可在晶圓之背面上形成絕緣膜及凸塊(電極)且層狀體需要具有耐熱性及耐化學性。
3.熱輻射效率、電性質及穩定性改良之化合物薄半導體(例如GaAs)
諸如砷化鎵之化合物半導體由於其電性質(高電子遷移率、直接躍遷型能帶結構)優於矽而用於高效能離散晶片、雷射二極體及其類似物。使用本發明之層狀體且藉此降低晶片之厚度可提高其散熱效率且改良效能。當前,用於降低厚度及電極形成之研磨操作係藉由使用滑脂或抗蝕劑材料使半導體晶圓與作為支撐件之玻璃基板接合來執行。因此,接合材料可由用於在加工完成後分離晶圓與玻璃基板之溶劑溶解。此同時帶來分離需要數天時間以上及需要處理廢料溶液之問題。當使用本發明之層狀體時可解決該等問題。
4.應用於大型晶圓以改良生產力
在大型晶圓(例如12吋直徑矽晶圓)情況下,非常重要的是易於分離晶圓與支撐件。當使用本發明之層狀體時可容易地進行分離,且因此本發明亦可應用於此領域。
5.薄水晶晶圓
在水晶晶圓領域,需要降低晶圓厚度以提高振盪頻率。當使用本發明之層狀體時可容易地進行分離,且因此本發明亦可應用於此領域。
6.用於液晶顯示器之薄玻璃
在液晶顯示器領域,需要降低玻璃厚度以降低顯示器重量且玻璃需要具有均勻厚度。當使用本發明之層狀體時可容易地進行分離,且因此本發明亦可應用於此領域。
藉由以下實例進一步說明本發明之目標及優點,但該等實例中所述特定材料及其量以及其他條件及細節不應視為不當地限制本發明。
對可自MTS System Corp.,Eden Prairie,Minnesota獲得之具有30 kN容量之INSIGHT MATERIALS TESTING SYSTEM 30EL,820.030-EL進行剝離力量測以測定接合層或離型層塗層與基板表面之間的剝離力。使一片可自3M Company,St.Paul,Minnesota獲得之WAFER DE-TAPING TAPE 3305與加工後測試基板上所塗之接合層或離型層之表面層合。設定膠帶尺寸使得自基板邊緣延伸出75 mm膠帶標籤。使用刀片在膠帶及下伏黏著劑中產生兩個平行切口(相隔約25 mm)。將基板安裝於安裝板上,固定至抗張測試器之底板固定器。接著將75 mm膠帶標籤附著至抗張測試機之上部固定器,該固定器連接至垂直測力計,使得可以125 mm/min之速率進行90度剝離測試。
材料
將約2.5 cm3離型組合物B手動注射分散於201 mm直徑×0.7 mm厚度玻璃支撐件(Eagle XG,可自Corning Inc.,Corning,New York,USA
獲得)上且使用旋塗機(PWM32-BD-CB15,Headway Research Incorporated,Garland,Texas)在3000 rpm下旋塗25秒以獲得均勻的18 μm厚度塗層。接著使用6吋(15.2 cm)長Fusion Systems D燈泡(300瓦特/吋)在空氣中固化經塗佈之支撐件之開放面歷時5秒。
將約7 cm3接合組合物A手動注射分配於200 mm裸矽晶圓基板(Wafer Reclaim Services,Spring City,PA.)上。經由在1150 rpm下旋塗20秒將黏著劑均勻塗佈於晶圓上,產生48 μm厚度塗層。在真空中使用WSS 8101M型號的晶圓支撐件系統結合器(可自Tazmo Co.,LTD.Freemont,California獲得)使經黏著劑塗佈之矽晶圓與201 mm直徑×0.7 mm厚度玻璃支撐件之經離型組合物B塗佈之表面結合。使用6吋(15.2 cm)長Fusion Systems D燈泡(300瓦特/吋)經玻璃支撐件UV固化接合組合物A 20秒。
接著使用習知技術研磨矽晶圓背面至50 μm厚度。未觀測到剝落、破裂或其他晶圓損傷。結合之晶圓-支撐件堆疊在260℃下熱老化10分鐘以複製消耗器背面熱循環。未觀測到Si晶圓基板或玻璃支撐件之分層,或接合組合物A層與離型組合物B層之分離。
使用手動框架型號UH114-8(可自USI Ultron Systems,Inc.,Moorpark,CA,USA獲得)使所結合之堆疊與切割膠帶及框架結合。接著將所結合之框形堆疊置放於多孔真空吸盤上以穩固固定組件。藉由將刀片插入由玻璃支撐件與矽晶圓基板界定之間隙中來起始玻璃支撐件與所結合堆疊之分離。將可撓性聚合物真空板(可自Suss MicroTek Inc.,Sunnyvale,CA,USA獲得)置放於玻璃支撐件上且抽真空以將暴露之玻璃表面緊固至撓性板。手動彎曲及提起撓性板以依序撬開且最終將玻璃自離型層表面分離。使用晶圓剝帶膠帶879(可自3M Company,St Paul,MN,USA獲得)藉由習知剝帶剝離方法以機械方式自Si晶圓基板表面將暴露之離型層及黏著接合層作為單一層剝離。在
260℃下熱老化10分鐘後分離接合組合物A與裸矽晶圓所需之剝離力預先量測為約1 N/25 mm。在剝離後,晶圓上未遺留可見殘餘物。
將約2.5 cm3離型組合物C手動注射分散於200 mm裸矽晶圓基板(Wafer Reclaim Services,Spring City,PA.)上且使用旋塗機(PWM32-BD-CB15,Headway Research Incorporated,Garland,Texas)在3000 rpm下旋塗25秒以獲得均勻的18 μm厚度塗層。接著使用6吋(15.2 cm)長Fusion Systems D燈泡(300瓦特/吋)在空氣中固化經塗佈之支撐件之開放面歷時5秒。
使用手動注射器將約7 cm3接合組合物A分配於經離型組合物C塗佈之200 mm矽晶圓之頂部。經由在760 rpm下旋塗20秒將黏著劑均勻塗佈於晶圓上,產生約50 μm厚度塗層。在真空中使用WSS 8101M型號的晶圓支撐件系統結合器(可自Tazmo Co.,LTD.Freemont,California獲得)使經黏著劑塗佈之矽晶圓與201 mm直徑×0.7 mm厚度玻璃支撐件(Eagle XG,可自Corning Inc.,Corning,New York,USA獲得)結合。使用6吋(15.2 cm)長Fusion Systems D燈泡(300瓦特/吋)經玻璃支撐件UV固化接合組合物A 20秒。
接著使用習知技術研磨矽晶圓背面至50微米厚度。未觀測到剝落、破裂或其他晶圓損傷。所結合之晶圓-支撐件堆疊在260℃下熱老化10分鐘以複製消耗器背面熱循環。未觀測到Si晶圓基板或玻璃支撐件之分層,或接合組合物A層與離型組合物C層之分離。
使用手動框架型號UH114-8(可自USI Ultron Systems,Inc.,Moorpark,CA,USA獲得)使所結合之堆疊與切割膠帶及框架結合。接著將所結合之框形堆疊置放於多孔真空吸盤上以穩固固定組件。藉由將刀片插入由玻璃支撐件及矽晶圓基板界定之間隙中來起始矽晶圓基板與玻璃支撐件之分離。將可撓性聚合真空板(可自Suss MicroTek
Inc.,Sunnyvale,CA,USA獲得)置放於玻璃支撐件上且抽真空以將暴露之玻璃表面緊固至撓性板。手動彎曲及提起撓性板以依序撬開且最終使矽晶圓基板自離型層表面分離。在與玻璃支撐件分離後,晶圓上未遺留可見殘餘物。自玻璃支撐件表面手動將暴露之離型層及黏著接合層作為單一層剝離。
使用手動注射器將約7 cm3離型組合物B分配於202 mm直徑×1.0 mm厚度玻璃支撐件(Tempax,可自Mitorika Glass Company,Ltd.,Japan獲得)上。經由在100 rpm下旋塗20秒將黏著劑均勻塗佈於玻璃支撐件上,產生約50 μm厚度塗層。在真空中使用WSS 8101M型號的晶圓支撐件系統結合器(可自Tazmo Co.,LTD.Freemont,California獲得)使經離型塗佈之支撐件與201 mm直徑×0.7 mm厚度玻璃基板(Eagle XG,可自Corning Inc.,Corning,New York,USA獲得)結合。使用6吋(15.2 cm)長Fusion Systems D燈泡(300瓦特/吋)經玻璃支撐件UV固化離型組合物B 20秒。所結合之基板-支撐件堆疊在250℃下熱老化1小時以複製消耗器背面熱循環。未觀測到玻璃基板或支撐件自離型組合物B之分層。
接著將所結合之堆疊置放於多孔真空吸盤上以穩固固定組件。藉由將刀片插入由玻璃支撐件及玻璃基板界定之間隙中來起始玻璃基板與玻璃支撐件之分離。將可撓性聚合真空板(可自Suss MicroTek Inc.,Sunnyvale,CA,USA獲得)置放於玻璃基板上且抽真空以將暴露之玻璃表面緊固至撓性板。手動彎曲及提起撓性板以依序撬開且最終使玻璃基板自玻璃支撐件分離。所暴露之離型層作為單層薄片手動剝離。在與玻璃支撐件分離後,基板上未遺留可見殘餘物。
熟習此項技術者顯而易知本發明之各種修改及變更而此等修改及變更不偏離本發明之範疇及精神。應理解,希望本發明不受到本文
中闡述之說明性實施例及實例之不當限制且該等實例及實施例僅為了舉例而呈現且希望本發明之範疇僅由下文中闡述之申請專利範圍限定。本發明中引用之所有參考文獻均以全文引用的方式併入本文中。
102‧‧‧基板
104‧‧‧焊球/焊料凸塊
106‧‧‧離型層
108‧‧‧接合層
112‧‧‧支撐件
114‧‧‧分離界面
Claims (30)
- 一種層合物體,其包含:支撐件;離型層,其安置於該支撐件上;接合層,其安置於該離型層上且與該離型層接觸;及基板,其安置於該接合層上且與該接合層接觸,其中該離型層包括適量黏著改良劑。
- 如請求項1之層合物體,其中該支撐件為透光性支撐件。
- 如請求項1之層合物體,其中該支撐件包含阻光性支撐件。
- 如請求項1之層合物體,其中該離型層包含由至少一種具有自由基反應基團之單體聚合製成的聚合物。
- 如請求項4之層合物體,其中該至少一種具有自由基反應基團之單體包含(甲基)丙烯酸烷基酯。
- 如請求項1之層合物體,其中該黏著改良劑包含聚矽氧(甲基)丙烯酸酯。
- 如請求項1之層合物體,其中以該離型層之總重量計,該離型層中存在之該黏著改良劑之量為大於0至小於約6.0重量%之量。
- 如請求項1之層合物體,其中該接合層包含丙烯酸系黏著劑。
- 如請求項6之層合物體,其中該接合層包含適量黏著改良劑,且其中該離型層中之該黏著改良劑之量係大於該接合層中之該黏著改良劑之量。
- 如請求項1之層合物體,其中該離型層與該接合層在交聯時為使該基板與該支撐件結合的單一組件。
- 如請求項10之層合物體,其中使該基板與該支撐件結合之該單一組件為暫時性且可移除的。
- 如請求項1之層合物體,其中該層合物體在該基板經受另一加工步驟時固持該基板。
- 如請求項9之層合物體,其中該另一加工步驟包含背面研磨、真空塗佈、氣相沈積、蝕刻、剝離、化學處理、退火、拋光、消除應力、結合或附著、光學量測或電學測試。
- 一種層合物體,其包含:支撐件;接合層,其安置於該支撐件上且與該支撐件接觸;離型層,其安置於該接合層上且與該接合層接觸;及基板,其與該離型層接觸,其中該離型層包含適量黏著改良劑。
- 如請求項14之層合物體,其中該接合層、該離型層或兩者包含丙烯酸系黏著劑。
- 如請求項14之層合物體,其中該黏著改良劑包含聚矽氧(甲基)丙烯酸酯。
- 如請求項14之層合物體,其中該接合層包含適量黏著改良劑,且其中該離型層中之該黏著改良劑之量係大於該接合層中之該黏著改良劑之量。
- 如請求項14之層合物體,其中該離型層與該接合層在交聯時為使該基板與該支撐件結合的單一組件。
- 如請求項18之層合物體,其中使該基板與該支撐件結合之該單一組件為暫時性且可移除的。
- 如請求項14之層合物體,其中該層合物體在該基板經受另一加工步驟時固持該基板。
- 如請求項20之層合物體,其中該另一加工步驟包含背面研磨、真空塗佈、氣相沈積、蝕刻、剝離、化學處理、退火、拋光、 消除應力、結合或附著、光學量測及電學測試。
- 一種固持基板以進行進一步加工之方法,其包含:在支撐件上提供暫時性、可移除的結合層;使該結合層與基板層合以形成層合物;對該層合物進行至少一個其他加工步驟;及在不損傷該基板之情況下自該結合層剝離該基板。
- 如請求項22之固持基板以進行進一步加工之方法,其中該暫時性、可移除的結合層包含黏著改良劑。
- 如請求項22之固持基板以進行進一步加工之方法,其中該至少一個其他加工步驟使該基板暴露於高於約150℃之溫度。
- 一種固持基板以進行進一步加工之方法,其包含:在待進一步加工之基板上提供暫時性、可移除的結合層;使該結合層與支撐件層合以形成層合物;對該層合物進行至少一個其他加工步驟;及在不損傷該基板之情況下自該結合層剝離該基板。
- 一種製造層合物體之方法,其包含:在基板上塗佈接合層;在支撐件上塗佈離型層;使包含該接合層之該基板與包含該離型層之該支撐件層合,其中該離型層或該接合層中之至少一者包含適量黏著改良劑。
- 如請求項26之製造層合物體之方法,其中該表面改良劑包含聚矽氧(甲基)丙烯酸酯。
- 如請求項26之製造層合物體之方法,其中該接合層包含適量黏著改良劑,且其中該離型層中之該黏著改良劑之量係大於該接合層中之該黏著改良劑之量。
- 如請求項26之製造層合物體之方法,其中該方法係在真空中進行。
- 一種製造層合物體之方法,其包含:在支撐件上塗佈接合層;在基板上塗佈離型層;使包含該接合層之該基板與包含該離型層之該支撐件層合,其中該離型層或該接合層中之至少一者包含適量黏著改良劑。
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JP (1) | JP6268158B2 (zh) |
KR (1) | KR102063559B1 (zh) |
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US9269623B2 (en) * | 2012-10-25 | 2016-02-23 | Rohm And Haas Electronic Materials Llc | Ephemeral bonding |
US9315696B2 (en) * | 2013-10-31 | 2016-04-19 | Dow Global Technologies Llc | Ephemeral bonding |
JP6299290B2 (ja) * | 2014-03-07 | 2018-03-28 | 富士通株式会社 | 回路基板の製造方法 |
JP6193813B2 (ja) * | 2014-06-10 | 2017-09-06 | 信越化学工業株式会社 | ウエハ加工用仮接着材料、ウエハ加工体及びこれらを使用する薄型ウエハの製造方法 |
TWI692517B (zh) | 2015-09-30 | 2020-05-01 | 日商富士軟片股份有限公司 | 暫時接著劑、積層體、積層體的製造方法、元件基板的製造方法及半導體元件的製造方法 |
KR102494902B1 (ko) * | 2017-02-02 | 2023-02-01 | 쇼와덴코머티리얼즈가부시끼가이샤 | 전자 부품의 제조 방법, 가보호용 수지 조성물 및 가보호용 수지 필름 |
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TWI585876B (zh) * | 2016-05-27 | 2017-06-01 | 力成科技股份有限公司 | 已封裝半導體模組母片之植球方法 |
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EP2828883A1 (en) | 2015-01-28 |
JP6268158B2 (ja) | 2018-01-24 |
KR20140138287A (ko) | 2014-12-03 |
US20150034238A1 (en) | 2015-02-05 |
JP2015518270A (ja) | 2015-06-25 |
EP2828883B1 (en) | 2019-07-31 |
WO2013142054A1 (en) | 2013-09-26 |
KR102063559B1 (ko) | 2020-01-09 |
EP2828883A4 (en) | 2015-10-28 |
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