JP6268158B2 - 一時的基板支持体及び支持体分離のための積層体、方法、並びに材料 - Google Patents
一時的基板支持体及び支持体分離のための積層体、方法、並びに材料 Download PDFInfo
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- 230000000670 limiting effect Effects 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000002816 methylsulfanyl group Chemical group [H]C([H])([H])S[*] 0.000 description 1
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- YLGYACDQVQQZSW-UHFFFAOYSA-N n,n-dimethylprop-2-enamide Chemical compound CN(C)C(=O)C=C YLGYACDQVQQZSW-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Substances [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- UJMWVICAENGCRF-UHFFFAOYSA-N oxygen difluoride Chemical compound FOF UJMWVICAENGCRF-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 239000013500 performance material Substances 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
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- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 238000003878 thermal aging Methods 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N urea group Chemical group NC(=O)N XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
- 229960000834 vinyl ether Drugs 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- INRGAWUQFOBNKL-UHFFFAOYSA-N {4-[(Vinyloxy)methyl]cyclohexyl}methanol Chemical compound OCC1CCC(COC=C)CC1 INRGAWUQFOBNKL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
「化学線」は、光化学反応を生じさせることができる任意の電磁放射線を指し、紫外線、可視線、及び赤外線を含み、
「上に配置される」は、相互に直接接触しているか、又はそれぞれが、例えば2つの層の表面特性を変性することができる介在層と直接接触しているかのいずれかである、2つの層を指し、
「光透過性支持体」は、相当量(光化学反応をもたらすのに十分な量)の化学線が透過することができる材料を指し、
「(メタ)アクリレート」は、アクリル酸又はメタクリル酸のいずれかに基づくエステル類を指し、
「熱可塑性」は、加熱される際に可逆的に液体になり、冷却される際に非常にガラス状の状態に凍結する、ポリマーを指し、
「熱硬化性(thermoset)」又は「熱硬化性(thermosetting)」は、不可逆的に硬化するポリマー材料を指し、
「紫外線硬化性」は、紫外線(UV)及び/若しくは可視光で照射することによって誘発される、モノマー又はオリゴマーの重合を指す。
(式中、R1及びR2は、ポリエチレンオキシド、ポリプロピレンオキシド、及びポリテトラメチレンオキシド等の炭化水素ベースのラジカル、C2〜C12脂肪族ラジカル、C2〜C12環状脂肪族ラジカル、芳香族ラジカル、並びにポリエステルベースのラジカルであり、R3は、H又はCH3のいずれかである)を有する有機変性(メタ)アクリル化シリコーンである可能性がある。例示的な材料は、Evonik Industries(Mobile,Alabama)から入手可能なTEGORAD 2250、2100、2200、2300、及びCytec(Woodland Park,N.J)から入手可能なEBECRYL 350のようなポリ(アルキレンオキシド)変性シリコーン(メタ)アクリレート、Miwon Specialty Chemicals(South Korea)から入手可能なMIRAMER SIP 900等のポリエステル変性シリコーン(メタ)アクリレート、及び同様にEvonik Industriesから入手可能なALBIFLEX 712のような芳香族エポキシ変性シリコーン(メタ)アクリレートである。他の好適な(メタ)アクリレート変性シリコーンポリマーは、Siltech Corporation(Toronto,Canada)からSILMER ACRの商品名で入手可能な直鎖の二官能性の水分散性(メタ)アクリレートシリコーンプレポリマーであり得る。これらの例は、SILMER ACR Di−1508、SILMER ACR Di−2510、SILMER ACR Di−1010、SILMER ACR Di−2010、及びSILMER ACR Di−4515であり得る。追加の好適な(メタ)アクリレート変性シリコーンポリマーとして、Momentive Performance Materials(Albany NY)からのCOATOSIL 3503及びCOATOSIL 3509等の反応性コーティング添加剤が挙げられる。これらの変性シリコーン(メタ)アクリレートは、接合層及び剥離層における適合性を改善する。改善された適合性は、一般的に、層状体の処理工程のいずれかでの早期の層間剥離の防止におけるより高い有効性をもたらし、依然として、剥離処理中の容易な取り外しを可能にする。接着性改質剤の典型的なレベルは、接合層中及び剥離層中に0.1〜10重量%である。より典型的なレベルは、0.1〜4%である。
本開示は、例えば、多機能又は高性能を実現するために、複数の大規模集積(LSI)デバイス及び受動部品が単一のパッケージ内に収容され、積層マルチチップパッケージと称される、システムインパッケージと称されるデバイス形態で有用である。本開示によると、これらのデバイスのための25μm以下のウエハを信頼性をもって高歩留りで製造することができる。
このデバイスでは、チップは、貫通電極によって接続され、そのため、配線長さが短縮され、電気特性が改善される。貫通電極を形成するための貫通孔の形成及び貫通孔への銅の埋め込み等の技術的問題を解決するために、チップの厚さが更に低減される場合がある。本開示の層状体を使用することによって、そのような構成を有するチップを連続的に形成する場合、ウエハの裏面上に絶縁フィルム及びバンプ(電極)が形成されてもよく、層状体は、熱及び化学物質に対する耐性を有する必要がある。
ヒ化ガリウム等の化合物半導体は、それらのシリコンより有利な電気特性(高電子移動度、直接遷移型バンド構造)のため、高性能離散チップ、レーザダイオード等に使用される。本開示の層状体を使用し、それによってチップの厚さを低減することによって、その放熱効率が高まり、性能が向上する。現在、厚さ低減のための研削作業及び電極の形成は、グリース又はレジスト材料を使用して、半導体ウエハを支持体としてのガラス基板に接合することによって実施される。したがって、処理の完了後にガラス基板からウエハを分離するために、接合材料は、溶媒によって溶解されてもよい。これには、分離に数日を超える時間が必要であり、廃液を処置する必要があるという問題が伴う。本開示の層状体が使用される場合、これらの問題を解決することができる。
大きいウエハ(例えば、直径が12インチ(30.5cm)のシリコンウエハ)の場合、ウエハ及び支持体を容易に分離することが非常に重要である。本開示の層状体が使用される場合、この分離を容易に実施することができ、したがって、本開示はまた、この分野にも適用することができる。
水晶ウエハの分野では、振動周波数を増加させるために、ウエハの厚さ低減が要求される。本開示の層状体が使用される場合、この分離を容易に実施することができ、したがって、本開示はまた、この分野にも適用することができる。
液晶ディスプレイの分野では、ディスプレイの重量を低減するために、ガラスの厚さを低減することが所望され、ガラスが均一な厚さであることが望ましい。本開示の層状体が使用される場合、この分離を容易に実施することができ、したがって、本開示はまた、この分野にも適用することができる。
引き剥がし力測定
接合又は剥離層コーティングと基板表面との間の引き剥がし力を判定するために、MTS System Corp.(Eden Prairie,Minnesota)から入手可能な、30kNの能力を有するINSIGHT MATERIALS TESTING SYSTEM 30EL,820.030−ELで、引き剥がし力測定を行った。3M Company(St.Paul,Minnesota)から入手可能なウエハDE−TAPING TAPE 3305の一片を、後処理された試験基板上にコーティングされた接合又は剥離層の表面に積層した。テープは、約75mmのテープのタブが基板の縁部から延在するように寸法決定された。テープ及びその下の接着剤に、かみそり刃を使用して、約25mm離れた2つの平行な切り込みを入れた。基板を装着プレート上に装着し、引張試験機のベースプレート固定具に貼付した。75mmのテープタブを引張試験機の上側固定具に取り付け、125mm/分の速度で90度引き剥がし試験を行うことができるように、前記固定具を垂直ロードセルに接続した。
直径201mm×厚さ0.7mmのガラス支持体(Eagle XG、Corning Inc.(Corning,New York,USA)から入手可能)上に、約2.5cm3の剥離組成物Bを注射器で手作業で分注し、スピンコーティング機(PWM32−BD−CB15、Headway Research Incorporated(Garland,Texas))を使用して、3000rpmで25秒間回転させ、均一な18μmの厚さのコーティングを達成した。次いで、コーティングされた支持体を、6インチ(15.2cm)の長さのFusion Systems D電球、300ワット/インチ(118.1ワット/cm)を使用して、空気中で5秒間、上向きで硬化させた。
200mmの裸のシリコンウエハ基板(Wafer Reclaim Services(Spring City,PA))上に、約2.5cm3の剥離組成物Cを注射器で手作業で分注し、スピンコーティング機(PWM32−BD−CB15、Headway Research Incorporated(Garland,Texas))を使用して、3000rpmで25秒間回転させ、均一な18μmの厚さのコーティングを達成した。次いで、コーティングされた支持体を、6インチ(15.2cm)の長さのFusion Systems D電球、300ワット/インチ(118.1ワット/cm)を使用して、空気中で5秒間、上向きで硬化させた。
直径202mm×厚さ1.0mmのガラス支持体(Tempax、Mitorika Glass Company,Ltd.(Japan)から入手可能)の上に、約7cm3の剥離組成物Bを注射器を使用して手作業で分注した。100rpmで20秒間のスピンコーティングを介して、ガラス支持体上に接着剤を均一にコーティングし、約50μmの厚さのコーティングをもたらした。ウエハ支持システム固着機、モデル番号WSS 8101M(Tazmo Co.,LTD.(Freemont,California)から入手可能)を使用して、剥離コーティングされた支持体を、直径201mm×厚さ0.7mmのガラス基板(Eagle XG、Corning Inc.(Corning,New York,USA)から入手可能)に真空下で固着した。6インチ(15.2cm)の長さのFusion Systems D電球、300ワット/インチ(118.1ワット/cm)を使用して、ガラス支持体を通して20秒間、剥離組成物BをUV硬化した。顧客での裏側熱サイクルを再現するために、固着された基板と支持体の積層体を250℃で1時間熱老化させた。剥離組成物Bからのガラス基板又は支持体の層間剥離は認められなかった。
Claims (6)
- 支持体と、
前記支持体上に配置された剥離層と、
前記剥離層上に配置され、前記剥離層と接触している接合層と、
前記接合層上に配置され、前記接合層と接触している基板と、を備え、
前記剥離層が、ある量のシリコーン(メタ)アクリレート接着性改質剤を含み、
前記接合層が、ある量のシリコーン(メタ)アクリレート接着性改質剤を含み、
前記剥離層中の前記接着性改質剤の量が、前記接合層中の前記接着性改質剤の量より多い、積層体。 - 支持体と、
前記支持体上に配置され、前記支持体と接触している接合層と、
前記接合層上に配置され、前記接合層と接触している剥離層と、
前記剥離層と接触している基板と、を備え、
前記剥離層が、ある量のシリコーン(メタ)アクリレート接着性改質剤を含み、
前記接合層が、ある量のシリコーン(メタ)アクリレート接着性改質剤を含み、
前記剥離層中の前記接着性改質剤の量が、前記接合層中の前記接着性改質剤の量より多いと、積層体。 - 支持体上に一時的な取り外し可能な固着層を設ける工程と、
前記固着層を基板に積層して積層体を形成する工程と、
前記積層体に少なくとも1つの更なる処理工程を実施する工程と、
前記基板を損傷することなく、前記固着層から前記基板を引き剥がす工程と、を含み、
前記固着層が、剥離層および接合層を備え、
前記剥離層が、ある量のシリコーン(メタ)アクリレート接着性改質剤を含み、
前記接合層が、ある量のシリコーン(メタ)アクリレート接着性改質剤を含み、
前記剥離層中の前記接着性改質剤の量が、前記接合層中の前記接着性改質剤の量より多い、更なる処理のために基板を保持する方法。 - 更に処理される基板上に一時的な取り外し可能な固着層を設ける工程と、
前記固着層を支持体に積層して積層体を形成する工程と、
前記積層体に少なくとも1つの更なる処理工程を実施する工程と、
前記基板を損傷することなく、前記固着層から前記基板を引き剥がす工程と、を含み、
前記固着層が、剥離層および接合層を備え、
前記剥離層が、ある量のシリコーン(メタ)アクリレート接着性改質剤を含み、
前記接合層が、ある量のシリコーン(メタ)アクリレート接着性改質剤を含み、
前記剥離層中の前記接着性改質剤の量が、前記接合層中の前記接着性改質剤の量より多い、更なる処理のために基板を保持する方法。 - 基板を接合層でコーティングする工程と、
支持体を剥離層でコーティングする工程と、
前記接合層を有する前記基板を、前記剥離層を有する前記支持体に積層する工程と、を含み、
前記剥離層が、ある量のシリコーン(メタ)アクリレート接着性改質剤を含み、
前記接合層が、ある量のシリコーン(メタ)アクリレート接着性改質剤を含み、
前記剥離層中の前記接着性改質剤の量が、前記接合層中の前記接着性改質剤の量より多い、積層体を作製する方法。 - 基板を剥離層でコーティングする工程と、
前記剥離層を接合層でコーティングする工程と、
前記剥離層および前記接合層を有する前記基板を、支持体に積層する工程と、を含み、
前記剥離層が、ある量のシリコーン(メタ)アクリレート接着性改質剤を含み、
前記接合層が、ある量のシリコーン(メタ)アクリレート接着性改質剤を含み、
前記剥離層中の前記接着性改質剤の量が、前記接合層中の前記接着性改質剤の量より多い、積層体を作製する方法。
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