TW201342647A - 具有脈衝摻雜層的太陽能電池 - Google Patents

具有脈衝摻雜層的太陽能電池 Download PDF

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TW201342647A
TW201342647A TW102105654A TW102105654A TW201342647A TW 201342647 A TW201342647 A TW 201342647A TW 102105654 A TW102105654 A TW 102105654A TW 102105654 A TW102105654 A TW 102105654A TW 201342647 A TW201342647 A TW 201342647A
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Xing-Quan Liu
Christopher M Fetzer
Daniel C Law
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Boeing Co
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Abstract

一種太陽能電池係包含一基極區域、一背面電場層以及一設置在該基極區域與該背面電場層之間的脈衝摻雜層。

Description

具有脈衝摻雜層的太陽能電池
此申請案係有關於太陽能電池，並且更具體而言係有關於具有一脈衝摻雜(delta doping)層的太陽能電池，並且甚至更具體而言係有關於具有一在該背面電場區域中的脈衝摻雜層之太陽能電池。
太陽能電池係藉由光伏效應來轉換太陽的能量成為有用的電能。現代的多接面的太陽能電池係以顯著高於傳統的矽太陽能電池的效率來操作，其具有重量輕的附加優點。因此，太陽能電池係提供一種適合用於各種的地面及太空應用的可靠、重量輕且永續的電能來源。
太陽能電池通常包含一種具有某一能量帶隙(bandgap)的半導體材料。在太陽光中具有能量大於該半導體材料的帶隙的光子係被該半導體材料所吸收，藉此釋放在該半導體材料內的電子。被釋放的電子擴散穿過該半導體材料，並且以一電流來流過一電路。
電子-電洞在太陽能電池的背面處之再結合係導致效率損失。因此，太陽能電池通常設置有一位在接近該太陽能電池背面之背面電場層。該背面電場層係作用為防止少數載子流向背面(亦即，朝向穿隧接面或背面電極)的阻障。因此，該背面電場層大致係避免少數載子在太陽能電池的背面的介面或表面處之再結合、或是從該基極逸出，藉此鈍化該基極 背面的介面或表面並且作用為該太陽能電池的一少數載子的阻障。然而，要找出更高帶隙的材料以用作為該背面電場層，尤其是用於例如AlGaInP太陽能電池之高帶隙的太陽能電池變成是越加困難的。
於是，熟習此項技術者繼續在太陽能電池的領域中努力研究與發展。
在一實施例中，所揭露的太陽能電池可包含一基極區域、一背面電場層以及一設置在該基極區域與該背面電場層之間的脈衝摻雜層。
在另一實施例中，所揭露的太陽能電池可包含一具有一前端以及一後端的基極區域、以及一位在接近該基極區域的該後端之脈衝摻雜層。
在又一實施例中，所揭露的是一種用於形成一太陽能電池之方法。該方法可包含以下步驟(1)提供一基板；(2)在該基板上生長一背面電場層；(3)脈衝摻雜該背面電場層以形成一脈衝摻雜層；以及(4)在該脈衝摻雜層之上生長一額外的層。
所揭露的具有脈衝摻雜層之太陽能電池以及用於形成該太陽能電池之方法的其它實施例從以下的詳細說明、所附的圖式以及所附的申請專利範圍將會變成是明顯的。
10‧‧‧太陽能電池
12‧‧‧電池
14‧‧‧上方的結構
16‧‧‧下方的結構
18‧‧‧窗口
20‧‧‧射極區域
22‧‧‧本質或空乏區域
24‧‧‧基極區域
26‧‧‧背面電場(“BSF”)區域
28‧‧‧第一背面電場層
30‧‧‧脈衝摻雜層
32‧‧‧第二背面電場層
100‧‧‧方法
102、104、106、108、110‧‧‧步驟
圖1是所揭露的具有脈衝摻雜層之太陽能電池的一實施例之概要的橫截面圖； 圖2是展示可被用來形成所揭露的具有脈衝摻雜層之太陽能電池的步驟之流程圖；圖3是比較所揭露的太陽能電池(具有一脈衝摻雜層)以及一種不具有在該背面電場區域中的脈衝摻雜層之太陽能電池的照光的電流-電壓(“LIV”)之圖形描繪；圖4是所揭露的太陽能電池(具有一脈衝摻雜層)以及用於對照的一種不具有在該背面電場區域中的脈衝摻雜層之太陽能電池的開路電壓之圖形描繪；圖5A是一種具有一單獨作為該背面電場區域的脈衝摻雜層之太陽能電池之概要的帶隙圖；以及圖5B是一種具有一作為該背面電場區域的部分的脈衝摻雜層之太陽能電池之概要的帶隙圖。
參照圖1，所揭露的具有脈衝摻雜層之太陽能電池的大致以10標示的一實施例可包含一位在一上方的結構14以及一下方的結構16之間的電池12。該電池12可包含一窗口18、一射極區域20，一本質(intrinsic)或空乏區域22、一基極區域24以及一背面電場(“BSF”)區域26。
該上方的結構14可以是任何設置在該電池12之上的結構。熟習此項技術者將會體認到該上方的結構14的特定成分將會是依據該太陽能電池10的特定結構而定。
在一種結構中，該太陽能電池10可以是一種多接面的太陽能電池，並且該電池12可以是該多接面的太陽能電池之上方的子電池。或 者是，該電池12可以是該太陽能電池10的唯一電池。因此，該上方的結構14例如可包含一抗反射的塗層、一蓋層(例如，一GaAs蓋)以及一電接觸層(例如，一金屬格柵)。
在另一結構中，該太陽能電池10可以是一種多接面的太陽能電池，並且該上方的結構14可以是該多接面的太陽能的另一子電池。熟習此項技術者將會體認到相鄰的子電池可藉由一穿隧接面來加以分開。
該下方的結構16可以是任何設置在該電池12之下的結構。熟習此項技術者將會體認到該下方的結構16的特定成分將會是依據該太陽能電池10的特定結構而定。
在一結構中，該太陽能電池10可以是一種多接面的太陽能電池，並且該電池12可以是該多接面的太陽能電池之下方的子電池。或者是，該電池12可以是該太陽能電池10的唯一電池。因此，該下方的結構16例如可包含一緩衝層以及一基板(例如，一鍺基板)。
在另一結構中，該太陽能電池10可以是一種多接面的太陽能電池，並且該下方的結構16可以是該多接面的太陽能的另一子電池。電池12可藉由一穿隧接面來和該下面的電池加以分開。
該背面電場區域26可包含一第一背面電場層28、一脈衝摻雜層30以及一第二背面電場層32。因此，該脈衝摻雜層30可被設置在該第一背面電場層28以及該第二背面電場層32之間。
或者是，該背面電場區域26可包含該第一背面電場層28以及該脈衝摻雜層30(亦即，沒有第二背面電場層)。因此，該脈衝摻雜層30可設置在該基極區域24以及該第一背面電場層28之間的介面處。
該脈衝摻雜層30可以是由任何相對於該第一及第二背面電場層28、32作用為一摻雜物的元素所構成。因此，該脈衝摻雜層30的成分可依據該第一及第二背面電場層28、32的成分而定。
作為一個一般且非限制性的例子，該電池12可以用如下所列地加以形成：該窗口18可以是AlInP2，該射極區域20可以是GaInP2，該本質區域22可以是GaInP2，該基極區域24可以是GaInP2，並且該第一及第二背面電場層28、32可以是AlGaAs。因此，由於該第一及第二背面電場層28、32係從第13及15族元素來加以形成，該脈衝摻雜層30可以是由除了在第13及15族中的元素之外的一種元素(或是多種元素)來加以形成。
作為一個特定且非限制性的例子，該電池12的第一及第二背面電場層28、32可以是由AlGaAs來加以形成，並且該脈衝摻雜層30可以是由一種例如是碳、矽或鍺的第14族的元素來加以形成。
作為另一特定且非限制性的例子，該電池12的第一及第二背面電場層28、32可以是由AlGaAs來加以形成，並且該脈衝摻雜層30可以是由碳來加以形成。
該脈衝摻雜層30的層厚度可依據各種的因素而定，該些因素係包含有所使用的脈衝摻雜物以及被施加在該脈衝摻雜層30之上的背面電場材料(例如，該第一背面電場層28的材料)的類型。熟習此項技術者將會體認到，脈衝摻雜的限制可能會限制到脈衝摻雜層30可達成的整體層厚度。
在一表達方式中，該脈衝摻雜層30可具有一從約1奈米到約100奈米的平均的層厚度範圍。在另一表達方式中，該脈衝摻雜層30可 具有一從約5奈米到約50奈米的平均的層厚度範圍。在另一表達方式中，該脈衝摻雜層30可具有一從約5奈米到約25奈米的平均的層厚度範圍。在另一表達方式中，該脈衝摻雜層30可具有一從約5奈米到約15奈米的平均的層厚度範圍。在另一表達方式中，該脈衝摻雜層30可具有一約10奈米的平均的層厚度。
因此，該脈衝摻雜物可被侷限到在該背面電場區域26中之一非常薄的層。
在該脈衝摻雜層30中的脈衝摻雜物的整體濃度亦可依據各種的因素而定，該些因素係包含有所使用的脈衝摻雜物以及該脈衝摻雜層30被施加在其上的該基板的材料(例如，該第一背面電場層28的材料)的類型。
在一表達方式中，在該脈衝摻雜層30中的脈衝摻雜物的整體濃度可以是每cm3至少約1x1018個原子。在另一表達方式中，在該脈衝摻雜層30中的脈衝摻雜物的整體濃度可以是每cm3至少約1x1019個原子。在另一表達方式中，在該脈衝摻雜層30中的脈衝摻雜物的整體濃度可以是每cm3至少約1x1020個原子。在另一表達方式中，在該脈衝摻雜層30中的脈衝摻雜物的整體濃度可以是每cm3至少約1x1021個原子。在又一表達方式中，在該脈衝摻雜層30中的脈衝摻雜物的整體濃度範圍可以從每cm3約1x1018個原子到每cm3約1x1022個原子。
圖2是描繪所揭露的大致標示為100的用於形成所揭露的具有脈衝摻雜層之太陽能電池之方法的一特定態樣的步驟之流程圖。其它用於形成一接近太陽能電池的背面的脈衝摻雜層之方法亦被思及。
該方法100可在方塊102以提供一適當的基板的步驟作為開始。該基板可以是一背面電場層可生長在其上的任何基板。適當的基板之一非限制性的例子是鍺。
在方塊104，一第一背面電場層可生長在該基板上。生長該第一背面電場層的步驟(步驟104)可繼續直到該第一背面電場層之所要的橫截面厚度已經達成為止。
該第一背面電場層可藉由，例如是分子束磊晶、有機金屬氣相磊晶或化學氣相磊晶的磊晶來生長。該磊晶先驅物可被選擇以產生該第一背面電場層之所要的材料。
可選擇的是，在生長該第一背面電場層的步驟(方塊104)之前，一緩衝可被施加至該基板，使得該緩衝係被設置在該第一背面電場層與該基板之間。熟習此項技術者將會體認到一緩衝可被選擇來最小化或消除在該第一背面電場層與該基板之間的晶格不匹配的效應。
在方塊106，磊晶可被停止，並且脈衝摻雜可開始。在該脈衝摻雜步驟(方塊106)期間，所要的脈衝摻雜物可被引入以在該第一背面電場層上形成一脈衝摻雜層。該脈衝摻雜步驟(方塊106)可被執行直到在該脈衝摻雜層中的脈衝摻雜物之一預設的最小整體濃度已經達成為止。
在方塊108，脈衝摻雜可被停止，並且該第二背面電場層的生長可開始。該第二背面電場層可藉由磊晶來生長，直到該第二背面電場層之所要的橫截面厚度已經達成為止。
如在方塊110所示，在形成該背面電場層以及該脈衝摻雜層後，該方法100可繼續生長該太陽能電池之額外的層的步驟，例如該基極 區域、本質區域、射極區域以及窗口18。
因此，兩種太陽能電池係利用該方法100來加以組裝：一種具有一在該背面電場區域中的脈衝摻雜層以及一種不具有脈衝摻雜層。除了該脈衝摻雜層不是存在、就是不存在之外，兩種太陽能電池大致是相同的。如圖3及4中所示，該具有一脈衝摻雜層之太陽能電池係呈現較高的開路電壓(“Voc“)以及一較佳的填充因子(fill factor)。
圖5A及5B是兩種具有脈衝摻雜作為該背面電場區域的部分之太陽能電池的概要的能帶圖。圖5A是一種其中該脈衝摻雜層是該唯一的背面電場層之太陽能電池的能帶圖。圖5B是一種其中該脈衝摻雜層是額外於該較高帶隙的背面電場層之太陽能電池的能帶圖。在圖5A中，該脈衝摻雜層係引入一能帶的能量尖峰，並且此能量尖峰係阻擋少數載子從該p-n接面逃逸離開。在圖5B中，該脈衝摻雜層所引入的能量尖峰係增強該背面電場阻擋少數載子的功能。
當該脈衝摻雜層被設置在該基極區域以及該背面電場層的介面處時，該脈衝摻雜層可更佳的鈍化該介面，並且因此可降低該介面的再結合，此亦可改善該背面電場的功能。
再者，藉由設置該脈衝摻雜層在該背面電場區域中，該高度的p型脈衝摻雜層可以非常良好地被侷限在一個窄的材料厚度範圍中，使得p型摻雜物的背向擴散到該基極區域中是很小的問題或是不成問題。熟習此項技術者將會體認到摻雜物的擴散到該基極區域中可能會因為縮短少數載子的擴散長度而損害到電池效能。
於是太陽能電池的效率可藉由利用在該太陽能電池的背面 電場區域中的一脈衝摻雜層來加以改良。在不受限於任何特定的理論下，據信利用一在該背面電場區域中的脈衝摻雜層可以使得該背面電場區域更有效率於阻擋在該太陽能電池的基極中之少數載子，並且可以更佳的鈍化在該基極區域與該背面電場區域之間的介面。進一步據信的是利用一在該背面電場區域中的脈衝摻雜層對於難以找到較高帶隙的材料來使用作為該背面電場之高帶隙的太陽能電池而言可能是特別有用的。
在另一替代實施例中，所揭露的脈衝摻雜層可被納入到該太陽能電池的基極區域中，而不是該背面電場區域。該基極區域可包含一前端以及一後端。該脈衝摻雜層可被納入到接近(亦即，位在或附近)該基極區域的後端的基極區域中。
儘管所揭露的具有脈衝摻雜層之太陽能電池的各種實施例已經加以展示與敘述，但熟習此項技術者在閱讀該說明書後可想到一些修改。本申請案係包含此種修改並且只受申請專利範圍的範疇之限制。
10‧‧‧太陽能電池
12‧‧‧電池
14‧‧‧上方的結構
16‧‧‧下方的結構
18‧‧‧窗口
20‧‧‧射極區域
22‧‧‧本質或空乏區域
24‧‧‧基極區域
26‧‧‧背面電場(“BSF”)區域
28‧‧‧第一背面電場層
30‧‧‧脈衝摻雜層
32‧‧‧第二背面電場層

Claims (20)

  1. 一種太陽能電池，其係包括：一基極區域；一背面電場層；以及一設置在該基極區域與該背面電場層之間的脈衝摻雜層。
  2. 如申請專利範圍第1項之太陽能電池，其中該脈衝摻雜層係被設置在該基極區域與該背面電場層之間的一介面處。
  3. 如申請專利範圍第1項之太陽能電池，其進一步包括一第二背面電場層，其中該脈衝摻雜層係被設置在該背面電場層與該第二背面電場層之間。
  4. 如申請專利範圍第1項之太陽能電池，其中該脈衝摻雜層係包括碳、矽、鍺、錫及鉛中之至少一種。
  5. 如申請專利範圍第4項之太陽能電池，其中該背面電場層係包括AlGaAs或是AlGaInP。
  6. 如申請專利範圍第1項之太陽能電池，其中該脈衝摻雜層係具有一至少1奈米的平均的層厚度。
  7. 如申請專利範圍第6項之太陽能電池，其中該平均的層厚度的範圍是從約1奈米至約100奈米。
  8. 如申請專利範圍第6項之太陽能電池，其中該平均的層厚度的範圍是從約5奈米至約50奈米。
  9. 如申請專利範圍第6項之太陽能電池，其中該平均的層厚度的範圍是從約5奈米至約15奈米。
  10. 如申請專利範圍第1項之太陽能電池，其中該脈衝摻雜層係包括具 有每cm3至少1x1018個原子的濃度之摻雜物。
  11. 如申請專利範圍第1項之太陽能電池，其中該脈衝摻雜層係包括具有每cm3至少1x1019個原子的濃度之摻雜物。
  12. 如申請專利範圍第1項之太陽能電池，其中該脈衝摻雜層係包括具有每cm3至少1x1020個原子的濃度之摻雜物。
  13. 如申請專利範圍第1項之太陽能電池，其係形成為一種多接面的太陽能電池。
  14. 如申請專利範圍第1項之太陽能電池，其進一步包括一窗口、一射極區域以及一本質區域。
  15. 一種太陽能電池，其係包括：一具有一前端以及一後端的基極區域；以及一接近該後端定位的脈衝摻雜層。
  16. 如申請專利範圍第15項之太陽能電池，其中該脈衝摻雜層係包括具有每cm3至少1x1018個原子的濃度之摻雜物。
  17. 如申請專利範圍第15項之太陽能電池，其進一步包括一背面電場層。
  18. 一種用於形成一太陽能電池之方法，其係包括以下步驟：提供一基板；在該基板上生長一背面電場層；脈衝摻雜該背面電場層以形成一脈衝摻雜層；以及在該脈衝摻雜層之上生長一額外的層。
  19. 如申請專利範圍第18項之方法，其中該生長步驟係包括藉由磊晶的生長。
  20. 如申請專利範圍第18項之方法，其中該額外的層是一第二背面電場層以及一基極區域其中之一。
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