TW201339767A - Exposure lithography device and exposure lithography method - Google Patents
Exposure lithography device and exposure lithography method Download PDFInfo
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- TW201339767A TW201339767A TW102103172A TW102103172A TW201339767A TW 201339767 A TW201339767 A TW 201339767A TW 102103172 A TW102103172 A TW 102103172A TW 102103172 A TW102103172 A TW 102103172A TW 201339767 A TW201339767 A TW 201339767A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0266—Marks, test patterns or identification means
- H05K1/0269—Marks, test patterns or identification means for visual or optical inspection
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/15—Position of the PCB during processing
- H05K2203/1572—Processing both sides of a PCB by the same process; Providing a similar arrangement of components on both sides; Making interlayer connections from two sides
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/16—Inspection; Monitoring; Aligning
- H05K2203/166—Alignment or registration; Control of registration
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- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
本發明是有關於一種曝光微影裝置以及曝光微影方法,特別是有關於一種對基板將圖像進行微影的曝光微影裝置以及曝光微影方法。 The present invention relates to an exposure lithography apparatus and an exposure lithography method, and more particularly to an exposure lithography apparatus and an exposure lithography method for lithographically imaging an image on a substrate.
近年來,作為將平面基板作為被曝光基板而形成電路圖案的曝光微影裝置,開發出一種不使用轉印遮罩而直接將微影光照射至基板來對電路圖案進行微影的曝光微影裝置。然而,在對要求高解析度的基板將電路圖案進行微影的情況下,存在如下情形:孔加工中所附著的灰塵及移動過程中附著於孔的灰塵會掉落至其他基板上,或因抗蝕劑(resist)塗佈等的加工的加熱而引起孔周邊變形。該情況下,微影於基板的第1面的電路圖案與微影於第2面的電路圖案的相對位置發生偏移。 In recent years, as an exposure lithography apparatus in which a planar substrate is used as an exposed substrate to form a circuit pattern, an exposure lithography in which a lithographic light is directly irradiated onto a substrate without using a transfer mask to lithographically pattern the circuit pattern has been developed. Device. However, in the case where the circuit pattern is lithographically applied to a substrate requiring high resolution, there is a case where dust adhering to the hole processing and dust adhering to the hole during the movement may fall onto other substrates, or Heating of the processing such as resist coating causes deformation of the periphery of the hole. In this case, the relative position of the circuit pattern on the first surface of the substrate and the circuit pattern on the second surface is shifted.
對此,提出有將電路圖案的微影所需的對準(alignment)用的標記微影於被曝光基板的第1面及第2面的曝光微影裝置。作為關於該曝光微影裝置的技術,在日本專利特開2008-292915 號公報中,揭示有對被曝光基板的第1面及第2面分別對第1對準用的標記及第2對準用的標記進行微影的曝光微影裝置。該曝光微影裝置根據第1及第2對準用的標記,將電路圖案微影於基板的第1面及第2面。而且,在美國專利6,701,197 B2號說明書中,揭示了如下的曝光微影裝置:使用與平台(stage)處於已知的位置關係的被固定的紫外線光源,而與被曝光基板的第1面的曝光同時地在第2面上形成對準用的標記。 On the other hand, there has been proposed an exposure lithography apparatus in which a mark for alignment required for lithography of a circuit pattern is lithographically incident on the first surface and the second surface of the substrate to be exposed. As a technique for the exposure lithography apparatus, in Japanese Patent Laid-Open No. 2008-292915 Japanese Laid-Open discloses an exposure lithography apparatus that lithographically marks a first alignment mark and a second alignment mark on a first surface and a second surface of an exposed substrate. The exposure lithography apparatus microscopically patterns the circuit pattern on the first surface and the second surface of the substrate in accordance with the first and second alignment marks. Further, in the specification of US Pat. No. 6,701,197 B2, an exposure lithography apparatus is disclosed which uses a fixed ultraviolet light source in a known positional relationship with a stage to be exposed to the first side of the substrate to be exposed. At the same time, marks for alignment are formed on the second surface.
在日本專利特開2008-292915號公報中所揭示的曝光微影裝置中,必須在微影處理前形成對準用的標記。因此,存在因烘烤時間而影響到週期時間(cycle time)的問題。而且,存在必須對第1面及第2面間的對準用的標記測量的位置偏移進行修正的問題。進而,存在如下問題:必須有在第1面及第2面的雙方形成對準用的標記的裝置構成。 In the exposure lithography apparatus disclosed in Japanese Laid-Open Patent Publication No. 2008-292915, it is necessary to form a mark for alignment before lithography. Therefore, there is a problem that the cycle time is affected by the baking time. Further, there is a problem in that it is necessary to correct the positional deviation of the mark measurement for alignment between the first surface and the second surface. Further, there is a problem in that it is necessary to have a device configuration in which the markings for alignment are formed on both the first surface and the second surface.
而且,在美國專利6,701,197 B2號說明書中所揭示的曝光微影裝置中,對被曝光基板將對準用的標記進行微影的位置被固定。因此,在對尺寸不同的多個基板的各個進行曝光的情況下,無法在與被曝光基板的尺寸相應的最佳位置處將對準用的標記進行微影。結果,存在有可能因基板的尺寸而對準精度降低的問題。 Further, in the exposure lithography apparatus disclosed in the specification of U.S. Patent No. 6,701,197 B2, the position at which the mark for alignment is lithographically fixed to the substrate to be exposed is fixed. Therefore, in the case of exposing each of a plurality of substrates having different sizes, it is impossible to lithographically mark the alignment at an optimum position corresponding to the size of the substrate to be exposed. As a result, there is a problem that the alignment accuracy may be lowered due to the size of the substrate.
本發明鑒於上述問題而完成,提供一種不依存於被曝光基板的尺寸,而能夠提高被曝光基板的表背的對準精度的曝光微 影裝置以及曝光微影方法。 The present invention has been made in view of the above problems, and provides an exposure microscopic which can improve the alignment accuracy of the front and back of an exposed substrate without depending on the size of the substrate to be exposed. Shadow device and exposure lithography method.
本發明的曝光微影裝置包括:第1曝光機構,藉由對載置於平台的印刷配線基板(printed circuit board,PCB)的第1面進行曝光而在上述第1面對電路圖案進行微影;標記形成機構,於上述平台設置為可相對移動,在對上述印刷配線基板的上述第1面的第1面用的電路圖案的微影處理中,在與上述第1面相反的第2面形成預定的多個標記;測量機構,對上述標記形成機構的位置進行測量;檢測機構,對藉由上述標記形成機構而形成於上述印刷配線基板的上述第2面的多個標記的位置進行檢測;以及第2曝光機構,以藉由上述測量機構測量的上述標記形成機構的位置及藉由上述檢測機構檢測的上述多個標記的位置作為基準,藉由對上述印刷配線基板的上述第2面進行曝光而在上述第2面對電路圖案進行微影。 The exposure lithography apparatus of the present invention includes: a first exposure mechanism that performs lithography on the first facing circuit pattern by exposing a first surface of a printed wiring board (PCB) placed on a stage The mark forming mechanism is provided so as to be relatively movable on the platform, and in the lithography of the circuit pattern for the first surface of the first surface of the printed wiring board, the second surface opposite to the first surface Forming a plurality of predetermined marks; measuring means for measuring a position of the mark forming means; and detecting means for detecting a position of the plurality of marks formed on the second surface of the printed wiring board by the mark forming means And a second exposure mechanism that uses the position of the mark forming mechanism measured by the measuring means and the position of the plurality of marks detected by the detecting means as a reference to the second surface of the printed wiring board Exposure is performed to perform lithography on the second facing circuit pattern.
根據該曝光微影裝置,藉由利用第1曝光機構對載置於平台的印刷配線基板的第1面進行曝光,而在上述第1面對電路圖案進行微影。而且,根據該曝光微影裝置,藉由相對於上述平台設置為可相對移動的標記形成機構,而在對上述印刷配線基板的上述第1面的第1面用的電路圖案的微影處理中,在與上述第1面相反的第2面形成預定的多個標記。而且,根據該曝光微影裝置,藉由測量機構對上述標記形成機構的位置進行測量。而且,根據該曝光微影裝置,藉由檢測機構,對由上述標記形成機構而 形成於上述印刷配線基板的上述第2面的多個標記的位置進行檢測。 According to the exposure lithography apparatus, the first surface of the printed wiring board placed on the stage is exposed by the first exposure mechanism, and the first facing circuit pattern is subjected to lithography. Further, according to the exposure lithography apparatus, the lithography process for the circuit pattern for the first surface of the first surface of the printed wiring board is performed by a mark forming mechanism that is relatively movable with respect to the stage. A predetermined plurality of marks are formed on the second surface opposite to the first surface. Further, according to the exposure lithography apparatus, the position of the mark forming mechanism is measured by a measuring mechanism. Further, according to the exposure lithography apparatus, the detecting means is used for the mark forming mechanism The position of the plurality of marks formed on the second surface of the printed wiring board is detected.
此處,本發明中,藉由第2曝光機構,以藉由上述測量機構測量的上述標記形成機構的位置及藉由上述檢測機構檢測的上述多個標記的位置作為基準,對印刷配線基板的上述第2面進行曝光。藉此,在上述第2面對電路圖案進行微影。 Here, in the second exposure mechanism, the position of the mark forming mechanism measured by the measuring means and the position of the plurality of marks detected by the detecting means are used as a reference for the printed wiring board. The second surface is exposed. Thereby, lithography is performed on the second facing circuit pattern.
亦即,本實施形態中,對標記形成機構的位置進行測量,預先在與第1面用的電路圖案的曝光位置處於已知的關係的第2面的位置,藉由標記形成機構而形成多個標記。而且,在對第2面曝光第2面用的電路圖案時,以標記形成機構的位置及多個標記的位置作為基準,對第2面用的電路圖案進行微影。藉此,可使微影於第1面及第2面的電路圖案的位置相對應。另外,上述「微影處理」是指從將印刷配線基板載置於平台上開始,至電路圖案的微影結束而印刷配線基板排出為止的一連串的處理。 In other words, in the present embodiment, the position of the mark forming mechanism is measured, and the position of the second surface having a known relationship with the exposure position of the circuit pattern for the first surface is formed in advance by the mark forming mechanism. Marks. Further, when the circuit pattern for the second surface is exposed on the second surface, the circuit pattern for the second surface is lithographically based on the position of the mark forming mechanism and the position of the plurality of marks. Thereby, the position of the circuit pattern on the first surface and the second surface can be made to correspond. In addition, the above-mentioned "micro-shadow processing" refers to a series of processes from when the printed wiring board is placed on the stage, until the lithography of the circuit pattern is completed, and the printed wiring board is discharged.
如此,根據本發明的曝光微影裝置,可使微影於第2面的電路圖案的位置與微影於第1面的電路圖案的位置相對應,其中上述第2面的電路圖案是以與微影於第1面的電路圖案處於已知的位置關係的多個標記的位置作為基準而進行微影。結果,能夠不依存於被曝光基板的尺寸,而提高被曝光基板的表背的對準精度。 As described above, according to the exposure lithography apparatus of the present invention, the position of the circuit pattern on the second surface can be made to correspond to the position of the circuit pattern on the first surface of the second surface, wherein the circuit pattern of the second surface is The lithography is performed on the first surface of the circuit pattern at a position of a plurality of marks having a known positional relationship as a reference for lithography. As a result, the alignment accuracy of the front and back of the substrate to be exposed can be improved without depending on the size of the substrate to be exposed.
另外,本發明中,上述標記形成機構可相對於如下兩個方向中的至少一個方向可移動地設置著,上述兩個方向為以載置 於上述平台的上述印刷配線基板的任一邊作為基準而預定的方向、及與該預定的方向交叉的方向。藉此,可對在適當的位置形成多個標記的位置進行調整。 Further, in the invention, the mark forming mechanism may be movably provided with respect to at least one of two directions, wherein the two directions are placed The predetermined direction of the printed wiring board on the platform is a predetermined direction and a direction intersecting the predetermined direction. Thereby, the position at which a plurality of marks are formed at an appropriate position can be adjusted.
而且,本發明中,上述標記形成機構亦可將可移動範圍設為相對於尺寸不同的多種印刷配線基板而可形成該標記的範圍。藉此,可不依存於基板的尺寸而在適當的位置形成多個標記。 Further, in the present invention, the mark forming means may have a movable range as a range in which the mark can be formed with respect to a plurality of types of printed wiring boards having different sizes. Thereby, a plurality of marks can be formed at appropriate positions without depending on the size of the substrate.
而且,本發明中,可還包括規定機構,上述規定機構規定上述印刷配線基板的尺寸,上述標記形成機構根據藉由上述規定機構而規定的尺寸來形成上述多個標記的各個。藉此,可在與基板的尺寸相應的適當的位置形成多個標記。 Furthermore, the present invention may further include a predetermined mechanism that defines a size of the printed wiring board, and the mark forming means forms each of the plurality of marks in accordance with a size defined by the predetermined mechanism. Thereby, a plurality of marks can be formed at appropriate positions corresponding to the size of the substrate.
而且,本發明中,上述測量機構可包括對上述標記形成機構進行攝影的攝影機構,使用上述攝影機構所得的攝影圖像來測量上述標記形成機構的各自的位置。藉此,可簡單地測量標記形成機構的位置。 Further, in the invention, the measuring means may include an image capturing means for photographing the mark forming means, and the respective positions of the mark forming means are measured using the captured image obtained by the image forming means. Thereby, the position of the mark forming mechanism can be simply measured.
而且,本發明中,上述標記形成機構把相對於上述標記形成機構處於已知相對位置的校正用標記形成於一位置,使得即便上述印刷配線基板載置於上述平台的狀態下,仍可藉由上述測量機構對進行攝影的位置,上述測量機構包括攝影機構,上述攝影機構以使各個上述校正用標記被攝影的方式來對上述標記形成機構進行攝影,且上述測量機構使用藉由該攝影機構所得的攝影圖像對上述標記形成機構的各自的位置進行測量。藉此,即便在無法對標記形成機構進行攝影的情況下,亦可測量標記形成機構 的位置。 Further, in the invention, the mark forming means forms the correction mark at a known relative position with respect to the mark forming means at a position so that the printed wiring board can be placed in the state of the stage, The measuring means includes a photographing means for photographing the position at which the photographing means performs photographing, wherein the photographing means photographs the mark forming means so that the respective calibration marks are photographed, and the measuring means uses the photographing means The photographic image measures the respective positions of the mark forming mechanisms described above. Thereby, even in the case where the marking forming mechanism cannot be photographed, the marking forming mechanism can be measured. s position.
而且,本發明中,上述攝影機構可設置多個,上述攝影機構的各個對上述標記形成機構中的一個以上進行攝影。藉此,可簡單地測量標記形成機構的位置。 Further, in the invention, a plurality of the photographing means may be provided, and each of the photographing means photographs one or more of the mark forming means. Thereby, the position of the mark forming mechanism can be simply measured.
而且,本發明中,上述攝影機構可與已微影出電路圖案的位置處於已知的關係,且相對於上述平台可移動地設置著。藉此,可不依存於標記形成機構的位置,而測量標記形成機構的位置。 Further, in the present invention, the photographing mechanism may be in a known relationship with the position where the circuit pattern has been micro-shadowed, and is movably provided with respect to the platform. Thereby, the position of the mark forming mechanism can be measured without depending on the position of the mark forming mechanism.
而且,本發明中,上述標記形成機構可藉由對上述印刷配線基板的上述第2面以短波長的光進行曝光而形成上述標記。藉此,可高精度地在適當的位置形成多個標記。 Further, in the invention, the mark forming means may form the mark by exposing the second surface of the printed wiring board to light of a short wavelength. Thereby, a plurality of marks can be formed at an appropriate position with high precision.
而且,本發明中,上述標記形成機構可藉由使油墨附著於上述印刷配線基板的第2面而形成上述多個標記。藉此,可簡單地形成多個標記。 Further, in the invention, the mark forming means may form the plurality of marks by adhering ink to the second surface of the printed wiring board. Thereby, a plurality of marks can be formed simply.
本發明的曝光微影方法是曝光微影裝置的曝光微影方法,上述曝光微影裝置包括:第1曝光機構,藉由對載置於平台的印刷配線基板的第1面進行曝光而在上述第1面對電路圖案進行微影;標記形成機構,相對於上述平台可相對移動地設置著,在與上述第1面相反的第2面形成預定的多個標記;測量機構,對上述標記形成機構的位置進行測量;檢測機構,對藉由上述標記形成機構而形成於上述印刷配線基板的上述第2面的多個標記的位置進行檢測;以及第2曝光機構,藉由對上述印刷配線基板 的上述第2面進行曝光而在上述第2面對電路圖案進行微影,上述曝光微影方法包括下述步驟:以測量上述標記形成機構的位置的方式來對上述測量機構進行控制;使上述標記形成機構向預定的位置移動;在上述印刷配線基板的上述第1面對第1面用的電路圖案進行微影,且在上述電路圖案的微影處理中,以與上述第1面用的電路圖案相對應地在上述第2面形成多個標記的方式,來控制上述曝光機構及上述標記形成機構;以及以藉由上述測量機構測量的上述標記形成機構的位置及藉由上述檢測機構檢測的上述多個標記的位置作為基準,以在上述第2面對上述第2面用的電路圖案進行微影的方式來控制上述第2曝光機構。 The exposure lithography method of the present invention is an exposure lithography method of an exposure lithography apparatus, and the exposure lithography apparatus includes: a first exposure mechanism that exposes a first surface of a printed wiring board placed on a stage The first surface is lithographically facing the circuit pattern; the mark forming mechanism is relatively movable with respect to the stage, and a predetermined plurality of marks are formed on the second surface opposite to the first surface; and the measuring means forms the mark The position of the mechanism is measured; the detecting means detects a position of the plurality of marks formed on the second surface of the printed wiring board by the mark forming means; and the second exposure means comprises the printed wiring board Exposing the second surface to the second facing circuit pattern by lithography, the exposure lithography method comprising the steps of: controlling the position of the mark forming mechanism to control the measuring mechanism; The mark forming mechanism moves to a predetermined position; the circuit pattern for the first surface facing the first surface of the printed wiring board is lithographically formed, and the lithography of the circuit pattern is used for the first surface Correspondingly, a plurality of marks are formed on the second surface to control the exposure mechanism and the mark forming mechanism; and the position of the mark forming mechanism measured by the measuring mechanism and detected by the detecting mechanism The position of the plurality of marks is used as a reference, and the second exposure means is controlled such that the second second surface facing the second surface is lithographically patterned.
根據本發明的曝光微影方法,因與本發明的曝光微影裝置同樣地發揮作用,故與本發明的曝光微影裝置同樣地,不依存於被曝光基板的尺寸,而能夠提高被曝光基板的表背的對準精度。 According to the exposure lithography method of the present invention, since the exposure lithography method functions in the same manner as the exposure lithography apparatus of the present invention, the exposed substrate can be improved without depending on the size of the substrate to be exposed. The alignment accuracy of the back of the watch.
根據本發明,不依存於被曝光基板的尺寸,而能夠提高被曝光基板的表背的對準精度。 According to the present invention, the alignment accuracy of the front and back of the substrate to be exposed can be improved without depending on the size of the substrate to be exposed.
1‧‧‧曝光微影系統 1‧‧‧Exposure lithography system
2‧‧‧第1曝光微影裝置 2‧‧‧1st exposure lithography device
3‧‧‧反轉裝置 3‧‧‧Reversal device
4‧‧‧第2曝光微影裝置 4‧‧‧2nd exposure lithography device
4a‧‧‧滾輪 4a‧‧‧Roller
4b‧‧‧滾輪單元 4b‧‧‧Roller unit
4c‧‧‧支持棒 4c‧‧‧Support bar
4d‧‧‧旋轉軸 4d‧‧‧Rotary axis
5‧‧‧第1搬送部 5‧‧‧1st transport department
6‧‧‧第2搬送部 6‧‧‧Second Transport Department
7‧‧‧第3搬送部 7‧‧‧3rd Transport Department
8‧‧‧第4搬送部 8‧‧‧4th Transport Department
10‧‧‧平台 10‧‧‧ platform
11‧‧‧基體 11‧‧‧ base
12‧‧‧基台 12‧‧‧Abutment
13‧‧‧移動機構部 13‧‧‧Mobile Agency
14‧‧‧導軌 14‧‧‧ rails
15、22‧‧‧閘極 15, 22‧‧ ‧ gate
16‧‧‧曝光部 16‧‧‧Exposure Department
16a‧‧‧曝光頭 16a‧‧‧Exposure head
17‧‧‧光源單元 17‧‧‧Light source unit
18‧‧‧光纖 18‧‧‧Fiber
19‧‧‧圖像處理單元 19‧‧‧Image Processing Unit
20‧‧‧信號電纜 20‧‧‧Signal cable
23‧‧‧攝影部 23‧‧‧Photography Department
23a‧‧‧導引部 23a‧‧‧Guide
30‧‧‧基板夾緊機構部 30‧‧‧Substrate clamping mechanism
31a~31d‧‧‧夾桿 31a~31d‧‧‧Pinch
32a~32d‧‧‧移動單元 32a~32d‧‧‧Mobile unit
33‧‧‧夾持器 33‧‧‧Clamps
34‧‧‧夾刀 34‧‧‧knife
35‧‧‧支持柱 35‧‧‧Support column
37‧‧‧插通孔 37‧‧‧ inserted through hole
40‧‧‧支持板 40‧‧‧Support board
41‧‧‧空氣氣缸 41‧‧‧Air cylinder
42‧‧‧活塞桿 42‧‧‧ piston rod
44‧‧‧驅動滑輪 44‧‧‧ drive pulley
45‧‧‧從動滑輪 45‧‧‧driven pulley
46‧‧‧正時皮帶 46‧‧‧ Timing belt
47‧‧‧皮帶驅動馬達 47‧‧‧Belt drive motor
48‧‧‧安裝部 48‧‧‧Installation Department
49‧‧‧光感測器(基板端緣感測器) 49‧‧‧Photosensor (substrate edge sensor)
50‧‧‧傾斜面 50‧‧‧ sloped surface
51‧‧‧紫外線光源 51‧‧‧UV light source
52‧‧‧標記形成部 52‧‧‧Marking Department
53‧‧‧校正用標記 53‧‧‧ calibration mark
62‧‧‧AC掌 62‧‧‧AC palm
63‧‧‧吸附部 63‧‧‧Adsorption Department
64‧‧‧擠壓部 64‧‧‧Extrusion Department
70‧‧‧系統控制部 70‧‧‧System Control Department
71‧‧‧平台驅動部 71‧‧‧ Platform Drive Department
72‧‧‧基板載置位置決定部 72‧‧‧Substrate placement position determination unit
73‧‧‧操作裝置 73‧‧‧Operating device
74‧‧‧移動控制部 74‧‧‧Mobile Control Department
C‧‧‧被曝光基板 C‧‧‧ exposed substrate
C1‧‧‧被曝光基板C的表面 C1‧‧‧ Surface of exposed substrate C
C2‧‧‧被曝光基板C的背面 C2‧‧‧Back of the exposed substrate C
L1‧‧‧距離 L1‧‧‧ distance
M‧‧‧對準用的標記 M‧‧‧marks for alignment
P1‧‧‧表面用圖像 P1‧‧‧ Surface image
P2‧‧‧背面用圖像 P2‧‧‧Back image
R‧‧‧紫外線光源51的可動範圍 R‧‧‧ movable range of ultraviolet light source 51
S101~S105、S201~S209、S301~S311‧‧‧步驟 S101~S105, S201~S209, S301~S311‧‧‧ steps
UV‧‧‧紫外線 UV‧‧‧UV
X、Y、Z、θ‧‧‧方向 X, Y, Z, θ‧‧‧ directions
圖1是表示實施形態的曝光微影系統的整體構成的構成圖。 Fig. 1 is a configuration diagram showing an overall configuration of an exposure lithography system according to an embodiment.
圖2是表示實施形態的曝光微影系統的功能的方塊圖。 Fig. 2 is a block diagram showing the function of the exposure lithography system of the embodiment.
圖3A是表示利用實施形態的曝光微影系統對被曝光基板的表面進行曝光的情況下的該表面的一例的正視圖。 3A is a front elevational view showing an example of the surface when the surface of the substrate to be exposed is exposed by the exposure lithography system of the embodiment.
圖3B是表示利用實施形態的曝光微影系統對被曝光基板的背面進行曝光的情況下的該背面的一例的正視圖。 3B is a front view showing an example of the back surface in the case where the back surface of the substrate to be exposed is exposed by the exposure lithography system of the embodiment.
圖4是表示實施形態的第1曝光微影裝置及第2曝光微影裝置的構成的立體圖。 4 is a perspective view showing a configuration of a first exposure lithography apparatus and a second exposure lithography apparatus according to the embodiment.
圖5是實施形態的第1曝光微影裝置及第2曝光微影裝置的基板夾緊機構部的分解立體圖。 Fig. 5 is an exploded perspective view showing a substrate clamping mechanism portion of the first exposure lithography apparatus and the second exposure lithography apparatus according to the embodiment.
圖6是用以說明實施形態的第1曝光微影裝置及第2曝光微影裝置的光感測器的功能的放大剖面圖。 Fig. 6 is an enlarged cross-sectional view showing the function of the photosensor of the first exposure lithography apparatus and the second exposure lithography apparatus according to the embodiment.
圖7A是用以說明實施形態的第1曝光微影裝置及第2曝光微影裝置的標記形成部的主要部分放大剖面圖。 Fig. 7A is an enlarged cross-sectional view showing main parts of a mark forming unit of the first exposure lithography apparatus and the second exposure lithography apparatus according to the embodiment.
圖7B是用以說明實施形態的第1曝光微影裝置及第2曝光微影裝置的標記形成部的主要部分放大俯視圖。 FIG. 7B is an enlarged plan view of a main part for explaining a mark forming portion of the first exposure lithography apparatus and the second exposure lithography apparatus according to the embodiment.
圖8是表示實施形態的曝光微影系統的反轉裝置中的反轉機構的構成的示意側正視圖。 8 is a schematic side elevational view showing the configuration of an inversion mechanism in the inversion device of the exposure lithography system according to the embodiment.
圖9是表示實施形態的第1曝光微影裝置及第2曝光微影裝置的電性系統的構成圖。 9 is a configuration diagram showing an electrical system of a first exposure lithography apparatus and a second exposure lithography apparatus according to the embodiment.
圖10是表示實施形態的曝光微影系統中平台的移動方向與攝影部的移動方向的關係的圖。 Fig. 10 is a view showing a relationship between a moving direction of a stage and a moving direction of a photographing unit in the exposure lithography system according to the embodiment;
圖11是表示實施形態的曝光微影系統的紫外線光源的可動範圍的圖。 Fig. 11 is a view showing a movable range of an ultraviolet light source of the exposure lithography system of the embodiment.
圖12是表示實施形態的曝光前處理程式的處理的流程的流程圖。 Fig. 12 is a flow chart showing the flow of processing of the pre-exposure processing program of the embodiment.
圖13是用於說明實施形態的曝光前處理的示意正視圖。 Fig. 13 is a schematic front view for explaining pre-exposure processing in the embodiment.
圖14是表示實施形態的第1曝光處理程式的處理的流程的流程圖。 Fig. 14 is a flowchart showing the flow of processing of the first exposure processing program in the embodiment.
圖15是用於說明實施形態的第1曝光處理的示意正視圖。 Fig. 15 is a schematic front view for explaining a first exposure process in the embodiment.
圖16是表示實施形態的第2曝光處理程式的處理的流程的流程圖。 Fig. 16 is a flowchart showing the flow of processing of the second exposure processing program in the embodiment.
圖17是用於說明實施形態的第2曝光處理的示意正視圖。 Fig. 17 is a schematic front view for explaining a second exposure process in the embodiment.
圖18是表示實施形態的曝光微影系統中被曝光基板的尺寸與對準用的標記的微影位置的關係的示意正視圖。 Fig. 18 is a schematic front elevational view showing the relationship between the size of the substrate to be exposed and the lithography position of the mark for alignment in the exposure lithography system of the embodiment.
以下,使用隨附圖示對本實施形態的曝光微影系統進行詳細說明。另外,本實施形態中,作為曝光微影系統1,以如下系統為例進行說明:將印刷配線基板或印刷基板及平板顯示器用玻璃基板等平板基板作為被曝光基板,對被曝光基板的第1面(以下亦稱作「表面」)及第2面(以下亦稱作「背面」)的雙方進行曝光微影。 Hereinafter, the exposure lithography system of the present embodiment will be described in detail using the drawings. In the present embodiment, the exposure lithography system 1 is described as an example in which a flat substrate such as a printed wiring board, a printed circuit board, or a flat glass substrate for a flat panel is used as an exposed substrate, and the first substrate to be exposed is used. Exposure lithography is performed on both the surface (hereinafter also referred to as "surface") and the second surface (hereinafter also referred to as "back surface").
圖1是表示本實施形態的曝光微影系統1的整體構成的構成圖。而且,圖2是表示本實施形態的曝光微影系統1的功能的方塊圖。如圖1以及圖2所示,曝光微影系統1包括第1曝光微影裝置2,該第1曝光微影裝置2對被曝光基板的表面進行曝光並且在被曝光基板的背面形成對準用的標記。另外,第1曝光微影裝置2在形成對準用的標記之前,對後述的紫外線光源51的位 置進行測量。而且,曝光微影系統1包括將被曝光基板的表背予以反轉的反轉裝置3。而且,曝光微影系統1包括對被曝光基板的背面進行曝光的第2曝光微影裝置4。而且,曝光微影系統1包括:將被曝光基板自裝置外部搬送至第1曝光微影裝置2的第1搬送部5,以及將被曝光基板自第1曝光微影裝置2搬送至反轉裝置3的第2搬送部6。而且,曝光微影系統1包括:將被曝光基板自反轉裝置3搬送至第2曝光微影裝置4的第3搬送部7,以及將被曝光基板自第2曝光微影裝置4搬送至裝置外部的第4搬送部8。 Fig. 1 is a configuration diagram showing an overall configuration of an exposure lithography system 1 of the present embodiment. 2 is a block diagram showing the function of the exposure lithography system 1 of the embodiment. As shown in FIGS. 1 and 2, the exposure lithography system 1 includes a first exposure lithography apparatus 2 that exposes the surface of the substrate to be exposed and forms alignment on the back surface of the substrate to be exposed. mark. Further, the first exposure lithography apparatus 2 has a position on the ultraviolet light source 51 to be described later before forming the mark for alignment. Set to take measurements. Moreover, the exposure lithography system 1 includes an inversion device 3 that inverts the front and back of the substrate to be exposed. Further, the exposure lithography system 1 includes a second exposure lithography apparatus 4 that exposes the back surface of the substrate to be exposed. Further, the exposure lithography system 1 includes the first transfer unit 5 that transports the substrate to be exposed from the outside of the device to the first exposure lithography device 2, and the substrate to be exposed from the first exposure lithography device 2 to the reversing device. The second transport unit 6 of 3. Further, the exposure lithography system 1 includes a third transport unit 7 that transports the substrate to be exposed from the inverting device 3 to the second exposure lithography device 4, and transports the substrate to be exposed from the second exposure lithography device 4 to the device. The fourth fourth transport unit 8 is external.
圖3A是表示對被曝光基板C的表面C1進行曝光的情況下的該表面C1的一例的正視圖,圖3B是表示對被曝光基板C的背面C2進行曝光的情況下的該背面C2的一例的正視圖。 3A is a front view showing an example of the surface C1 when the surface C1 of the substrate C to be exposed is exposed, and FIG. 3B is an example of the back surface C2 when the back surface C2 of the substrate C to be exposed is exposed. Front view.
如圖3A所示,在被曝光基板C的表面C1,表面用圖像P1藉由第1曝光微影裝置2被微影。而且,如圖3B所示,在被曝光基板C的背面C2,藉由第2曝光微影裝置4且以與表面C1的使表面用圖像P1被微影的座標系(以下稱作「圖像座標系」)相對應的圖像座標系,使背面用圖像P2被微影。另外,本實施形態中,表面用圖像P1為「F」形狀的圖像。而且,本實施形態中,背面用圖像P2為包圍與上述表面C1的「F」形狀的圖像相對應的背面C2的區域的矩形框形狀的圖像。進而,在被曝光基板C的背面C2,在正面觀察為上部中央側及正面觀察為下部中央側,多個(本實施形態中為2個)對準用的標記M藉由第1曝光微影裝置2被微影。該對準用的標記M為用以使分別微影於被曝光基板C的 表面C1及背面C2的表面用圖像P1的位置與背面用圖像P2的位置相互對應的標記。 As shown in FIG. 3A, on the surface C1 of the substrate C to be exposed, the surface image P1 is lithographically imaged by the first exposure lithography apparatus 2. Further, as shown in FIG. 3B, on the back surface C2 of the substrate C to be exposed, the second exposure lithography apparatus 4 and the coordinate system which is lithographic with the surface image P1 of the surface C1 (hereinafter referred to as "picture" The image coordinate system corresponding to the coordinate system ") causes the image P2 on the back side to be lithographic. Further, in the present embodiment, the surface image P1 is an image of the "F" shape. Further, in the present embodiment, the back surface image P2 is an image of a rectangular frame shape surrounding a region of the back surface C2 corresponding to the image of the "F" shape of the surface C1. Further, on the back surface C2 of the substrate C to be exposed, the upper center side and the front side are viewed as the lower center side as viewed from the front, and a plurality of (two in the present embodiment) alignment marks M are used by the first exposure lithography apparatus. 2 was lithographed. The alignment mark M is used to lithographically respectively on the exposed substrate C. The surface of the surface C1 and the back surface C2 corresponds to the position of the image P1 and the position of the back surface image P2.
本實施形態的曝光微影系統1中,在被曝光基板C的搬送方向的上游側設置著第1曝光微影裝置2。第1曝光微影裝置2在將未曝光的被曝光基板C搬入至裝置內時,如上述般,對被曝光基板C的表面C1進行曝光而在表面對表面用圖像P1進行微影。而且,第1曝光微影裝置2在被曝光基板C的背面C2形成對準用的標記M。 In the exposure lithography system 1 of the present embodiment, the first exposure lithography apparatus 2 is provided on the upstream side in the transport direction of the substrate C to be exposed. When the unexposed substrate C to be exposed is carried into the apparatus, the first exposure lithography apparatus 2 exposes the surface C1 of the substrate C to be exposed and lithographically forms the surface image P1 on the surface as described above. Further, the first exposure lithography apparatus 2 forms an alignment mark M on the back surface C2 of the substrate C to be exposed.
本實施形態的曝光微影系統1中,以φ0.5 mm至φ1 mm左右的圓形來將對準用的標記M進行微影。然而,大小或形狀並不限定於此。例如,就大小而言,只要為不與表面用圖像P1及背面用圖像P2的微影重合的大小即可,形狀則可任意地設定為十字型的形狀或矩形型的形狀等。 In the exposure lithography system 1 of the present embodiment, the alignment mark M is lithographically formed in a circular shape of about φ 0.5 mm to φ 1 mm. However, the size or shape is not limited to this. For example, the size may be any size that does not overlap with the lithography of the surface image P1 and the back surface image P2, and the shape may be arbitrarily set to a cross shape or a rectangular shape.
在第1曝光微影裝置2的被曝光基板C的搬送方向的下游側,設置著將被曝光基板C的表背予以反轉的反轉裝置3。在搬入藉由第1曝光微影裝置2而表面C1被曝光且微影有對準用的標記M的被曝光基板C時,為了在下一製程中對被曝光基板C的背面C2進行曝光,而反轉裝置3使被曝光基板C的表背反轉。 On the downstream side in the transport direction of the substrate C to be exposed of the first exposure lithography apparatus 2, an inversion device 3 that reverses the front and back of the substrate C to be exposed is provided. When the exposed substrate C on which the surface C1 is exposed and the lithography is aligned by the first exposure lithography apparatus 2 is carried in, in order to expose the back surface C2 of the substrate C to be exposed in the next process, The rotating device 3 reverses the front and back of the substrate C to be exposed.
在反轉裝置3的被曝光基板C的搬送方向的下游側,設置著對被曝光基板C的背面C2進行曝光的第2曝光微影裝置4。第2曝光微影裝置4在將藉由反轉裝置3而反轉的被曝光基板C搬入至裝置內時,對被曝光基板C的背面C2進行曝光而對背面用 圖像P2進行微影。此時,第2曝光微影裝置4在使用藉由第1曝光微影裝置2而微影於被曝光基板C的對準用的標記M進行位置對準之後,對背面C2進行曝光。 On the downstream side in the transport direction of the substrate C to be exposed of the inverting device 3, a second exposure lithography apparatus 4 that exposes the back surface C2 of the substrate C to be exposed is provided. When the exposed substrate C that has been inverted by the inversion device 3 is carried into the device, the second exposure lithography device 4 exposes the back surface C2 of the substrate C to be exposed to the back surface. Image P2 is lithographic. At this time, the second exposure lithography apparatus 4 performs alignment by using the mark M for lithography which is lithographically incident on the substrate C to be exposed by the first exposure lithography apparatus 2, and then exposes the back surface C2.
第1搬送裝置5、第2搬送裝置6、第3搬送裝置7、及第4搬送裝置8分別具有多個旋轉滾輪及使旋轉滾輪旋轉的驅動馬達。旋轉滾輪多根平行地敷設著,在旋轉滾輪的一端安裝著接受藉由皮帶(belt)或金屬絲(wire)傳遞的旋轉力的鏈輪(sprocket)或滑輪。作為傳遞使旋轉滾輪旋轉的驅動馬達的旋轉力的機構,除皮帶或金屬絲以外亦可採用借助於圓筒狀的磁鐵(magnet)的傳遞方法。 Each of the first conveying device 5, the second conveying device 6, the third conveying device 7, and the fourth conveying device 8 has a plurality of rotating rollers and a driving motor that rotates the rotating rollers. A plurality of rotating rollers are laid in parallel, and a sprocket or a pulley that receives a rotational force transmitted by a belt or a wire is attached to one end of the rotating roller. As a mechanism for transmitting the rotational force of the drive motor that rotates the rotary roller, a transfer method by a cylindrical magnet may be employed in addition to the belt or the wire.
另外,本實施形態中,為了提高被曝光基板C的產量(throughput)(單位時間的生產量),使用第1曝光微影裝置2及第2曝光微影裝置4這2台曝光微影裝置,來對被曝光基板C的表面C1及背面C2進行曝光。然而,曝光微影裝置的台數並不限定於2台,亦可利用1台曝光微影裝置,一邊使被曝光基板C自表面C1向背面C2反轉一邊對被曝光基板C的兩面進行微影。 Further, in the present embodiment, in order to increase the throughput (production amount per unit time) of the substrate C to be exposed, two exposure lithography apparatuses such as the first exposure lithography apparatus 2 and the second exposure lithography apparatus 4 are used. The surface C1 and the back surface C2 of the substrate C to be exposed are exposed. However, the number of the exposure lithography apparatuses is not limited to two, and one exposure lithography apparatus may be used to invert the exposed substrate C from both the surface C1 to the back surface C2 while microscopically exposing both sides of the exposed substrate C. Shadow.
然後,對第1曝光微影裝置2及第2曝光微影裝置4的構成進行說明。 Next, the configuration of the first exposure lithography apparatus 2 and the second exposure lithography apparatus 4 will be described.
圖4是表示本實施形態的第1曝光微影裝置2及第2曝光微影裝置4的構成的立體圖。以下,將平台10移動的方向規定為Y方向,將相對於該Y方向在水平面正交的方向規定為X方向,將與Y方向在鉛垂面正交的方向規定為Z方向,進而將以Z軸為 中心的旋轉方向規定為θ方向。 4 is a perspective view showing a configuration of the first exposure lithography apparatus 2 and the second exposure lithography apparatus 4 of the embodiment. Hereinafter, the direction in which the stage 10 moves is defined as the Y direction, the direction orthogonal to the horizontal plane in the Y direction is defined as the X direction, and the direction orthogonal to the vertical direction in the Y direction is defined as the Z direction, and further Z axis is The direction of rotation of the center is defined as the θ direction.
如圖4所示,第1曝光微影裝置2包括用以固定被曝光基板C的平板狀的平台10。平台10可移動地構成,固定於平台10的被曝光基板C伴隨平台10的移動而將被曝光基板C移動至曝光位置為止,藉由後述的曝光部16照射光束而在被曝光基板C對表面用圖像C1進行微影。 As shown in FIG. 4, the first exposure lithography apparatus 2 includes a flat plate 10 for fixing the substrate C to be exposed. The stage 10 is movably configured, and the exposed substrate C fixed to the stage 10 moves the exposed substrate C to the exposure position with the movement of the stage 10, and the exposed portion 16 is irradiated with a light beam to be exposed on the surface of the exposed substrate C. The lithography is performed using the image C1.
平台10支持於平板狀的基台12,該平板狀的基台12可移動地設置於桌狀的基體11的上表面。而且,在基台12與平台10之間,設置著具有包含馬達等的移動驅動機構(省略圖示)的移動機構部13。平台10藉由移動機構部13,相對於基台12以平台10的中央部的垂線為中心軸而向θ方向旋轉移動。 The platform 10 is supported by a flat base 12 which is movably disposed on the upper surface of the table-shaped base 11. Further, a moving mechanism portion 13 having a movement driving mechanism (not shown) including a motor or the like is provided between the base 12 and the stage 10. The platform 10 is rotationally moved in the θ direction with respect to the base 12 with the vertical line of the center portion of the platform 10 as a central axis by the moving mechanism portion 13.
在基體11的上表面設置著1根或多根(本實施形態中為2根)導軌14。基台12藉由導軌14而可來回自如移動地支持著,且藉由包含馬達等的平台驅動部(後述的平台驅動部71)而移動。而且,平台10藉由支持於該可移動的基台12的上表面,而沿著導軌14移動。 One or a plurality of (two in the present embodiment) guide rails 14 are provided on the upper surface of the base 11. The base 12 is movably supported by the guide rail 14, and is moved by a platform drive unit (a platform drive unit 71 to be described later) including a motor or the like. Moreover, the platform 10 is moved along the guide rail 14 by being supported on the upper surface of the movable base 12.
在基體11的上表面,以跨越導軌14的方式立設著門型的閘極(gate)15,在該閘極15上安裝著曝光部16。曝光部16包含多個(本實施形態中為16個)曝光頭16a,固定配置於平台10的移動路徑上。在曝光部16上分別連接著自光源單元17抽出的光纖18、及自圖像處理單元19抽出的信號電纜20。 On the upper surface of the base 11, a gate type gate 15 is erected so as to straddle the guide rail 14, and the exposure portion 16 is attached to the gate 15. The exposure unit 16 includes a plurality of (sixteen in the present embodiment) exposure heads 16a, and is fixedly disposed on the movement path of the stage 10. An optical fiber 18 drawn from the light source unit 17 and a signal cable 20 drawn from the image processing unit 19 are connected to the exposure unit 16, respectively.
各曝光頭16具有作為反射型的空間光調變機構的數位 微鏡裝置(digital micromirror device,DMD)。而且,各曝光頭17根據自圖像處理單元19輸入的圖像資料來控制DMD,從而對來自光源單元17的光束進行調變。各曝光頭16藉由將該光束照射至載置於平台10的被曝光基板C,而藉由第1曝光微影裝置2進行曝光。另外,亦可使用液晶等透過型空間光調變機構來作為空間光調變機構。 Each of the exposure heads 16 has a digital position as a reflective spatial light modulation mechanism Digital micromirror device (DMD). Further, each of the exposure heads 17 controls the DMD based on the image data input from the image processing unit 19, thereby modulating the light beam from the light source unit 17. Each of the exposure heads 16 is exposed by the first exposure lithography apparatus 2 by irradiating the light beam onto the substrate C to be exposed placed on the stage 10. Further, a transmissive spatial light modulation mechanism such as a liquid crystal may be used as the spatial light modulation mechanism.
在基體11的上表面,進而以跨越導軌14的方式設置著閘極22。在閘極22上安裝著用以對載置於平台10的被曝光基板C進行攝影的1個或多個(本實施形態中為2個)攝像部23。攝影部23為內置1次發光時間極短的頻閃儀(strobo)的電荷耦合器件(Charge Coupled Device,CCD)照相機等。攝影部23是為了對對準用的標記M進行攝影而設置,該對準用的標記M被微影於後述的標記形成部52以及被曝光基板C。而且,在閘極22上設置著用以導引攝影部23的X方向的移動的導引部23a。而且,各個攝影部23由導引部23導引而沿X方向移動。而且,攝影部23的相對於平台10的相對位置根據平台10或攝影部23的移動來測量,且記憶於系統控制部70所具有的記憶機構。另外,在對標記形成部52中的紫外線光源51進行攝影的情況下,在平台10上未載置被曝光基板C的狀態下對紫外線光源51進行攝影。 On the upper surface of the base 11, the gate 22 is further provided so as to straddle the guide rail 14. One or a plurality of (two in the present embodiment) imaging units 23 for photographing the substrate C to be exposed placed on the stage 10 are attached to the gate electrode 22. The photographing unit 23 is a charge coupled device (CCD) camera or the like that incorporates a strobo having a very short lighting time. The photographing unit 23 is provided to photograph the mark M for alignment, and the mark M for alignment is lithographically formed on the mark forming portion 52 and the substrate C to be exposed, which will be described later. Further, a guide portion 23a for guiding the movement of the imaging unit 23 in the X direction is provided on the gate 22. Further, each of the image capturing units 23 is guided by the guiding portion 23 to move in the X direction. Further, the relative position of the photographing unit 23 with respect to the stage 10 is measured based on the movement of the stage 10 or the photographing unit 23, and is stored in the memory mechanism of the system control unit 70. In the case where the ultraviolet light source 51 in the mark forming portion 52 is imaged, the ultraviolet light source 51 is imaged while the exposed substrate C is not placed on the stage 10.
第1曝光微影裝置2根據藉由攝影部23而對標記形成部52進行攝影所得的圖像,導出紫外線光源51的被曝光基板C的位置。另外,第2曝光微影裝置4根據藉由攝影部23而對對準 用的標記M進行攝影所得的圖像,與第1曝光微影裝置2的紫外線光源51的位置進行比較而檢測其位置偏移量(X方向、Y方向、θ方向上的偏移量)。該對準用的標記M的位置偏移量的資訊被用於微影於被曝光基板C的表面C1的表面用圖像P1與微影於背面C2的背面用圖像P2的位置的修正。 The first exposure lithography apparatus 2 derives the position of the exposed substrate C of the ultraviolet light source 51 based on the image obtained by imaging the marker forming unit 52 by the imaging unit 23. In addition, the second exposure lithography apparatus 4 is aligned in accordance with the photographing section 23 The image obtained by the use of the mark M is compared with the position of the ultraviolet light source 51 of the first exposure lithography apparatus 2, and the position shift amount (the amount of shift in the X direction, the Y direction, and the θ direction) is detected. The information on the positional shift amount of the mark M for alignment is used for the correction of the position of the surface image P1 on the surface C1 of the substrate C to be exposed and the image P2 on the back surface of the back surface C2.
另外,理想的是以與後述的標記形成部52的個數(或對準用的標記M的個數)相應的個數來設置攝影部23。然而,並不限於此,亦可設置有一個攝影部23,並且藉由使該攝影部23移動而對多個標記形成部52或多個對準用的標記M進行攝影。 In addition, it is preferable to provide the imaging unit 23 in a number corresponding to the number of the marker forming portions 52 (or the number of the alignment markers M) to be described later. However, the present invention is not limited thereto, and one imaging unit 23 may be provided, and the plurality of mark forming portions 52 or the plurality of alignment marks M may be imaged by moving the imaging portion 23.
而且,在平台10的上表面,設置著用以將被曝光基板C的端部固定於平台10的基板夾緊(clamp)機構部。 Further, on the upper surface of the stage 10, a substrate clamping mechanism portion for fixing the end portion of the substrate C to be exposed to the stage 10 is provided.
圖5是本實施形態的第1曝光微影裝置2及第2曝光微影裝置4的基板夾緊機構部30的分解立體圖。如圖5所示,基板夾緊機構部30包括一對夾桿(clamp bar)31a、31b,該一對夾桿31a、31b以夾入被曝光基板C的一方的對邊的方式自上方夾緊端部。而且,基板夾緊機構部30包括一對夾桿31c、31d,該一對夾桿31c、31d在被曝光基板C的水平面上以夾入另一方的對邊的方式自上方夾緊端部。而且,基板夾緊機構部30包括使該些夾桿31a~夾桿31d分別沿水平方向平行移動的移動單元32a~移動單元32d。夾桿31a~夾桿31d分別配置於平台10的上表面,移動單元32a~移動單元32d配置於平台10的下方。 FIG. 5 is an exploded perspective view of the substrate clamping mechanism unit 30 of the first exposure lithography apparatus 2 and the second exposure lithography apparatus 4 of the embodiment. As shown in FIG. 5, the substrate clamping mechanism portion 30 includes a pair of clamp bars 31a, 31b which are sandwiched from above by sandwiching one of the opposite sides of the substrate C to be exposed. Tight end. Further, the substrate clamping mechanism portion 30 includes a pair of clamping bars 31c and 31d that clamp the end portions from above on the horizontal surface of the exposed substrate C so as to sandwich the other opposite side. Further, the substrate clamping mechanism unit 30 includes moving units 32a to 32d that move the clips 31a to 31d in parallel in the horizontal direction. The clamp levers 31a to 31d are respectively disposed on the upper surface of the stage 10, and the moving units 32a to 32d are disposed below the platform 10.
本實施形態中,夾桿31a、31b在Y方向上為長條狀且 在X方向上分別相對向,夾桿31c、31d在X方向上為長條狀且在Y方向上分別相對向。夾桿31a、31b以如下方式構成:長度形成得比夾桿31c、夾桿31d的長度短,即便在被曝光基板C的尺寸小的情況下,亦不會相互干涉。 In the present embodiment, the clamp bars 31a and 31b are elongated in the Y direction and The clamp levers 31c and 31d are elongated in the X direction and opposed to each other in the Y direction, respectively, in the X direction. The clamp levers 31a and 31b are configured to have a length shorter than the lengths of the clamp lever 31c and the clamp lever 31d, and do not interfere with each other even when the size of the exposed substrate C is small.
在本實施形態中,夾桿31a包括金屬製(例如鋁製)的夾持器(clamp holder)33。而且,夾桿31a包括樹脂製的夾刀34,該夾刀34固定於夾持器33的下表面的內側區域(平台10的中心側區域),且與被曝光基板C的表面C1接觸。而且,夾桿31a包括設置於夾持器33的下表面的外側區域(平台10的外側區域)的2根支持柱35。在平台10上,以貫通表背方向且自平台10的端部朝向中央的方式,在各邊按照規定間隔形成一個或多個(本實施形態中,在各邊形成3個(共計12個))沿Y方向或X方向延伸的插通孔37。而且,夾桿31a的2根支持柱35插通至各邊的3個插通孔37中的2個插通孔37。夾桿31b~夾桿31d亦為與夾桿31a相同的構成。 In the present embodiment, the clamp lever 31a includes a clamp holder 33 made of metal (for example, made of aluminum). Further, the clamp bar 31a includes a resin blade 34 that is fixed to an inner region (a center side region of the stage 10) of the lower surface of the gripper 33 and that is in contact with the surface C1 of the substrate C to be exposed. Further, the clamp lever 31a includes two support posts 35 provided on an outer region (outer region of the stage 10) of the lower surface of the gripper 33. One or more of the sides of the platform 10 are formed at predetermined intervals on each side so as to penetrate the front and back directions of the platform 10 (in this embodiment, three (12 in total) are formed on each side. An insertion hole 37 extending in the Y direction or the X direction. Further, the two support posts 35 of the clamp lever 31a are inserted into the two insertion holes 37 of the three insertion holes 37 on the respective sides. The clamp lever 31b to the clamp lever 31d also have the same configuration as the clamp lever 31a.
移動單元32a包括對2根支持柱35進行支持的支持板40、及使該支持板40沿Z方向滑動移動的空氣氣缸41。空氣氣缸41的活塞桿42的前端固定於支持板40的下表面。空氣氣缸41藉由包含馬達等的驅動部而使活塞桿42下降及上升。活塞桿42的可動範圍受到限制,下降時上升時均在規定位置處停止。 The moving unit 32a includes a support plate 40 that supports the two support columns 35, and an air cylinder 41 that slides the support plate 40 in the Z direction. The front end of the piston rod 42 of the air cylinder 41 is fixed to the lower surface of the support plate 40. The air cylinder 41 lowers and raises the piston rod 42 by a drive unit including a motor or the like. The movable range of the piston rod 42 is limited, and stops at a predetermined position when rising when descending.
當活塞桿42下降時,夾桿43a與活塞桿42一併下降,夾桿31a被擠壓至平台10。此處,在平台10上載置著被曝光基板 C的情況下,被曝光基板C藉由夾桿31a而夾緊。另一方面,當活塞桿42上升時,夾桿31a與活塞桿42一併上升,夾桿31a與平台10在Z方向上隔開。夾桿31a與平台10隔開的距離比被曝光基板C的厚度大。將夾桿31a被擠壓至平台10時的夾桿31a的狀態稱作閉合狀態(閉合位置),將與平台10隔開時的夾桿31a的狀態稱作打開狀態(打開位置)。 When the piston rod 42 is lowered, the clamp rod 43a is lowered together with the piston rod 42, and the clamp rod 31a is pressed to the stage 10. Here, the exposed substrate is placed on the platform 10 In the case of C, the substrate C to be exposed is clamped by the chuck 31a. On the other hand, when the piston rod 42 is raised, the clamp lever 31a rises together with the piston rod 42, and the clamp lever 31a is spaced apart from the stage 10 in the Z direction. The distance between the clamp bar 31a and the stage 10 is larger than the thickness of the substrate C to be exposed. A state in which the clamp lever 31a when the clamp lever 31a is pressed to the stage 10 is referred to as a closed state (closed position), and a state in which the clamp lever 31a is separated from the stage 10 is referred to as an open state (open position).
移動單元32a還包括:在X方向上排列的驅動滑輪44及從動滑輪45,架設在該些滑輪44、滑輪45的正時皮帶(timing belt)46,以及使驅動滑輪44旋轉的皮帶驅動馬達47。皮帶驅動馬達47可進行正轉及逆轉。在正時皮帶46上經由安裝部48而安裝著空氣氣缸41,當正時皮帶46驅動時,空氣氣缸41及支持板40在X方向上移動,藉此,夾桿31a在X方向上移動。夾桿31a一邊使支持柱35沿著插通孔37滑動移動,一邊在支持柱35位於插通孔37的外側的端部的退避位置與支持柱35位於插通孔37的內側的端部的中央位置之間移動。另外,將夾桿31a夾緊被曝光基板C的周緣部時的夾桿31a的位置(退避位置與中央位置之間的任一位置)稱作夾緊位置。 The moving unit 32a further includes a driving pulley 44 and a driven pulley 45 arranged in the X direction, a timing belt 46 that is mounted on the pulleys 44 and the pulleys 45, and a belt driving motor 47 that rotates the driving pulleys 44. . The belt drive motor 47 can perform forward rotation and reverse rotation. The air cylinder 41 is attached to the timing belt 46 via the mounting portion 48. When the timing belt 46 is driven, the air cylinder 41 and the support plate 40 are moved in the X direction, whereby the clamp lever 31a moves in the X direction. The clamp lever 31a slides the support post 35 along the insertion hole 37 while the retracted position of the support post 35 at the outer end of the insertion hole 37 and the end of the support post 35 located inside the insertion hole 37. Move between the central positions. In addition, the position of the clamp lever 31a (any position between the retracted position and the center position) when the clamp lever 31a is clamped to the peripheral edge portion of the substrate C to be exposed is referred to as a clamp position.
移動單元32b、移動單元32c、移動單元32d為與移動單元32a相同的構成。其中,移動單元32b使夾桿31b在Z方向及X方向上移動,移動單元32c使夾桿31c在Z方向及Y方向上移動,移動單元32d使夾桿31d在Z方向及Y方向上移動。 The moving unit 32b, the moving unit 32c, and the moving unit 32d have the same configuration as the moving unit 32a. Here, the moving unit 32b moves the clamp lever 31b in the Z direction and the X direction, the moving unit 32c moves the clamp lever 31c in the Z direction and the Y direction, and the moving unit 32d moves the clamp lever 31d in the Z direction and the Y direction.
圖6是用以說明本實施形態的第1曝光微影裝置2及第 2曝光微影裝置4的光感測器49的功能的放大剖面圖。如圖5及圖6所示,在移動單元32a的支持板40上設置著用以檢測有無被曝光基板C的反射型的光感測器(基板端緣感測器)49。光感測器49安裝於支持板40上,且設置於在X方向及Y方向上與插通孔37相對應的位置,亦即,自上方觀察而光感測器49自插通孔37露出的位置。光感測器49包括朝向上方發出檢查光的投光部、及接收反射至被曝光基板C的背面C2的檢查光的受光部,在受光部接收到檢查光的情況下輸出有基板信號,在受光部未接收到檢查光的情況下輸出無基板信號。 Fig. 6 is a view for explaining the first exposure lithography apparatus 2 and the first embodiment of the embodiment; 2 An enlarged cross-sectional view showing the function of the photo sensor 49 of the lithography apparatus 4. As shown in FIGS. 5 and 6, a reflection type photosensor (substrate edge sensor) 49 for detecting the presence or absence of the substrate C to be exposed is provided on the support plate 40 of the moving unit 32a. The photo sensor 49 is mounted on the support plate 40 and disposed at a position corresponding to the insertion hole 37 in the X direction and the Y direction, that is, the photo sensor 49 is exposed from the insertion hole 37 as viewed from above. s position. The photo sensor 49 includes a light projecting portion that emits inspection light toward the upper side and a light receiving portion that receives the inspection light that is reflected on the back surface C2 of the substrate C to be exposed. When the light receiving unit receives the inspection light, the substrate signal is output. When the light receiving unit does not receive the inspection light, the substrateless signal is output.
夾桿31a的夾刀34位於光感測器49的上方。然而,為了防止來自光感測器49的檢查光反射至夾刀34而朝向光感測器49折回,在夾刀34的與插通孔37相對應的部位形成著傾斜面50。在各移動單元32b、移動單元32c、移動單元32d的支持板40上亦設置著與移動單元32a相同的光感測器49。 The nip 34 of the clamping lever 31a is located above the photo sensor 49. However, in order to prevent the inspection light from the photo sensor 49 from being reflected back to the chuck 34 and being folded back toward the photo sensor 49, an inclined surface 50 is formed at a portion of the chuck 34 corresponding to the insertion hole 37. The same photosensor 49 as the moving unit 32a is also provided on the support plate 40 of each of the moving unit 32b, the moving unit 32c, and the moving unit 32d.
而且,在各個支持板40,設置著對於載置於平台10的被曝光基板C形成對準用的標記M的標記形成部52。圖7A是用以說明本實施形態的第1曝光微影裝置2及第2曝光微影裝置4的標記形成部52的主要部分放大剖面圖。而且,圖7B是用以說明本實施形態的第1曝光微影裝置2及第2曝光微影裝置4的標記形成部52的主要部分放大俯視圖。另外,圖7B中為了說明紫外線光源51的構成而省略被曝光基板。 Further, in each of the support plates 40, a mark forming portion 52 for forming an alignment mark M for the substrate C to be exposed placed on the stage 10 is provided. FIG. 7A is an enlarged cross-sectional view showing the main part of the first exposure lithography apparatus 2 and the second exposure lithography apparatus 4 of the present embodiment. In addition, FIG. 7B is an enlarged plan view showing a main part of the mark forming unit 52 of the first exposure lithography apparatus 2 and the second exposure lithography apparatus 4 of the present embodiment. In addition, in FIG. 7B, in order to explain the structure of the ultraviolet light source 51, the to-be-exposed board|substrate is ab
如圖5、圖7A及圖7B所示,各個標記形成部52以與 在各邊設置著多個的插通孔37中的設置於中央的插通孔37相對應的方式,形成為沿著插通孔37的方向伸展的板狀。在標記形成部52,在平台10的中央的一側,設置著朝向平台10的方向產生紫外線光束(短波長的光束)紫外線(ultraviolet,UV)的紫外線光源51。將由該紫外線光源51產生的紫外線光束UV一邊通過插通孔37一邊照射至被曝光基板C,藉此在被曝光基板C的第2面(與平台10相接的一側的面)C2將對準用的標記M進行微影。 As shown in FIG. 5, FIG. 7A and FIG. 7B, each of the mark forming portions 52 is A plate shape extending in the direction of the insertion hole 37 is formed so as to correspond to the insertion hole 37 provided at the center among the plurality of insertion holes 37 provided on each side. In the mark forming portion 52, on the side of the center of the stage 10, an ultraviolet light source 51 that generates an ultraviolet light beam (short-wavelength light beam) ultraviolet rays (UV) toward the stage 10 is provided. The ultraviolet light beam UV generated by the ultraviolet light source 51 is irradiated onto the substrate C to be exposed through the insertion hole 37, whereby the second surface (the surface on the side in contact with the stage 10) C2 of the substrate C to be exposed is paired The quasi-use mark M is used for lithography.
而且,在標記形成部52,在平台10的端部的一側,多個(本實施形態中為2個)校正用標記53設置於可自平台10的上方目測確認的同一面上。而且,該些校正用標記53在將被曝光基板C載置於平台10上,且固定於基板夾緊機構30的狀態下,形成於不會由被曝光基板C所遮住而可通過插通孔37自外部目測確認的位置。藉此,各個校正用標記53可在由攝影部23所獲得的攝影圖像中識別。 Further, in the mark forming portion 52, on the side of the end portion of the stage 10, a plurality of (two in the present embodiment) correction marks 53 are provided on the same surface that can be visually confirmed from above the stage 10. Further, the correction marks 53 are placed on the stage 10 and fixed to the substrate clamping mechanism 30, and are formed so as not to be blocked by the exposed substrate C, and can be inserted. The hole 37 is visually confirmed from the outside. Thereby, each of the correction marks 53 can be identified in the photographic image obtained by the photographing unit 23.
各個標記形成部52分別與移動單元32a~移動單元32d的移動聯動地移動。與各個標記形成部52相對應的插通孔37設置於包含各個標記形成部25的移動路徑的區域。而且,紫外線光源51在藉由曝光部16對被曝光基板C的表面C1進行曝光的期間,亦可以貫通未插通支持柱35的插通孔37的方式產生紫外線光束UV。另外,紫外線光束UV的照射時間可根據塗佈於被曝光基板C的感光材料分別設定最佳時間。 Each of the marker forming portions 52 moves in conjunction with the movement of the moving unit 32a to the moving unit 32d. The insertion holes 37 corresponding to the respective mark forming portions 52 are provided in a region including the movement path of each of the mark forming portions 25. Further, while the ultraviolet light source 51 is exposing the surface C1 of the substrate C to be exposed by the exposure unit 16, the ultraviolet light beam UV may be generated so as to penetrate through the insertion hole 37 of the support post 35. Further, the irradiation time of the ultraviolet light beam UV can be set optimally according to the photosensitive materials applied to the substrate C to be exposed, respectively.
而且,在各個標記形成部52中,以紫外線光源51與校 正用標記53相互成為已知的位置關係的方式來進行設置,並且對各自的位置關係預先進行測量而記憶於系統控制部70所具有的記憶機構中。在紫外線光源51位於被曝光基板C的背部的情況下等,有時無法藉由攝影部23對紫外線光源51進行攝影。即便在該情況下,可藉由對各個校正用標記53進行攝影而測量位置,且根據所測量的各個校正用標記53的位置與所記憶的紫外線光源51及校正用標記53的位置關係,來導出紫外線光源51的位置。 Further, in each of the mark forming portions 52, the ultraviolet light source 51 is used to calibrate The markers 53 are set so as to have a known positional relationship with each other, and the respective positional relationships are measured in advance and memorized in the memory mechanism of the system control unit 70. When the ultraviolet light source 51 is located on the back of the substrate C to be exposed, the ultraviolet light source 51 may not be imaged by the imaging unit 23. Even in this case, the position can be measured by photographing each of the correction marks 53 and based on the positional relationship between the measured position of each of the correction marks 53 and the stored ultraviolet light source 51 and the correction mark 53. The position of the ultraviolet light source 51 is derived.
另外,第1曝光微影裝置2包括多個紫外線光源51,但第2曝光微影裝置4亦可不必包括多個紫外線光源51。亦可在第1曝光微影裝置2設置著多個紫外線光源,並且藉由使該紫外線光源移動而對多個對準用的標記M進行微影。 Further, the first exposure lithography apparatus 2 includes a plurality of ultraviolet light sources 51, but the second exposure lithography apparatus 4 does not have to include a plurality of ultraviolet light sources 51. A plurality of ultraviolet light sources may be provided in the first exposure lithography apparatus 2, and a plurality of alignment marks M may be lithographically moved by moving the ultraviolet light source.
第1曝光微影裝置2包括自動載置掌(auto carriers hand)(以下,AC掌)62,該自動載置掌將藉由第1搬送裝置5搬送而來的被曝光基板C搬入至第1曝光微影裝置2的內部。AC掌62形成為平板狀,並且可與水平面平行地在水平方向及鉛垂方向上移動地設置著。而且,在AC掌62的下表面,設置著:具有吸附部63的吸附機構,該吸附部63藉由抽吸空氣而將被曝光基板C利用真空吸附進行吸附保持;以及具有擠壓部64的擠壓機構,該擠壓部64將被曝光基板C朝向下方擠壓且上下移動自如。 The first exposure lithography apparatus 2 includes an auto carrier hand (hereinafter, AC palm) 62 that carries the exposed substrate C transported by the first transport device 5 to the first The inside of the lithography apparatus 2 is exposed. The AC palm 62 is formed in a flat plate shape and is movable in the horizontal direction and the vertical direction in parallel with the horizontal plane. Further, on the lower surface of the AC palm 62, there is provided an adsorption mechanism having an adsorption portion 63 that adsorbs and holds the exposed substrate C by vacuum suction by sucking air; and has a pressing portion 64. In the pressing mechanism, the pressing portion 64 presses the exposed substrate C downward and moves up and down.
AC掌62藉由將載置於第1搬送裝置5的未曝光的被曝光基板C利用吸附機構來吸附保持而在上方吊起,將吊起的被曝光基板C載置於平台10的上表面的預定的位置。當載置被曝光基 板C時,一邊藉由擠壓機構將被曝光基板C擠壓至平台10一邊解除吸附部63的吸附,藉此平台10的真空吸附發揮作用,從而被曝光基板C牢固地固定於平台10。 The AC palm 62 is sucked and held by the adsorption mechanism by the unexposed substrate C placed on the first transfer device 5, and is lifted upward, and the lifted exposed substrate C is placed on the upper surface of the stage 10. The intended location. When the exposed base is placed In the case of the plate C, the adsorption of the adsorption portion 63 is released by pressing the substrate C to be exposed to the stage 10 by the pressing mechanism, whereby the vacuum suction of the stage 10 acts, and the exposed substrate C is firmly fixed to the stage 10.
而且,AC掌62藉由將載置於平台10的上表面的已完成曝光的被曝光基板C利用吸附機構來吸附保持而在上方吊起。而且,AC掌62在吸附保持吊起的被曝光基板C的狀態下移動至第2搬送裝置6為止,然後解除吸附機構的吸附,藉此使被曝光基板C移動至第2搬送裝置6。 Further, the AC palm 62 is lifted up by suction holding the exposed substrate C that has been exposed on the upper surface of the stage 10 by the suction mechanism. In addition, the AC palm 62 moves to the second transfer device 6 while sucking and holding the exposed substrate C, and then the adsorption of the suction mechanism is released, thereby moving the substrate C to be exposed to the second transfer device 6.
根據本實施形態的曝光微影系統1的基板夾緊機構部30,可確實地夾緊被曝光基板C的周緣部,從而可矯正被曝光基板C的翹曲及應變。而且,基板夾緊機構部30為使紫外線光源51及光感測器59與夾桿31a~夾桿31d一併移動的構成。因此,因無須用於紫外線光源51及光感測器59的移動機構,故可抑制基板夾緊機構部30的製造成本。 According to the substrate clamping mechanism unit 30 of the exposure lithography system 1 of the present embodiment, the peripheral portion of the substrate C to be exposed can be surely clamped, and the warpage and strain of the substrate C to be exposed can be corrected. Further, the substrate clamping mechanism unit 30 has a configuration in which the ultraviolet light source 51 and the photo sensor 59 are moved together with the clamp lever 31a to the clamp lever 31d. Therefore, since it is not necessary to use the moving mechanism of the ultraviolet light source 51 and the photo sensor 59, the manufacturing cost of the substrate clamping mechanism portion 30 can be suppressed.
圖8是表示本實施形態的曝光微影系統1的反轉裝置4的反轉機構的構成的示意側正視圖。如圖8所示,反轉裝置4排列為2列,各列間具備具有夾入被曝光基板C的多個滾輪4a的滾輪單元4b。滾輪單元4b藉由支持棒4c而支持,當夾入被曝光基板C時,在藉由支持棒4c而使滾輪單元4b提昇的狀態下,以設置於滾輪單元4b的中央部的旋轉軸4d為中心進行旋轉。在滾輪單元4b旋轉180度後,將被曝光基板C自滾輪單元4b釋放,藉此被曝光基板C的表背反轉。另外,反轉機構的構成並不限於上 述構成,亦可使用將被曝光基板C的一端提昇使被曝光基板C旋轉180度而使被曝光基板C的表背反轉的方法、或其他的先前已知的方法。 FIG. 8 is a schematic side elevational view showing the configuration of the reversing mechanism of the reversing device 4 of the exposure lithography system 1 of the embodiment. As shown in FIG. 8, the inverting device 4 is arranged in two rows, and each of the rows is provided with a roller unit 4b having a plurality of rollers 4a sandwiching the substrate C to be exposed. The roller unit 4b is supported by the support rod 4c. When the substrate C is sandwiched, the roller unit 4b is lifted by the support rod 4c, and the rotation shaft 4d provided at the central portion of the roller unit 4b is The center rotates. After the roller unit 4b is rotated by 180 degrees, the exposed substrate C is released from the roller unit 4b, whereby the front and back of the exposed substrate C are reversed. In addition, the composition of the reversing mechanism is not limited to the above In the above configuration, a method of reversing the front and back of the substrate C to be exposed by rotating one end of the substrate C to be exposed and rotating the substrate C to be exposed may be used, or another conventionally known method.
圖9是表示本實施形態的第1曝光微影裝置2及第2曝光微影裝置4的電性系統的構成圖。 FIG. 9 is a view showing the configuration of an electrical system of the first exposure lithography apparatus 2 and the second exposure lithography apparatus 4 of the embodiment.
如圖9所示,在第1曝光微影裝置2中,設置著分別與裝置各部電性連接的系統控制部70,該系統控制部70對各部總括地控制。系統控制部70對AC掌62進行控制而進行被曝光基板C的朝平台10的搬入動作及排出動作。而且,系統控制部70一邊控制平台驅動部71一邊進行平台10的移動,藉由攝影部23進行對準用的標記M的攝影而調整圖像的微影位置。而且,系統控制部70對光源單元17及圖像處理單元19進行控制而使曝光頭16a進行曝光處理。操作裝置73具有顯示部與輸入部,例如在輸入被曝光基板C的外形尺寸時進行操作。 As shown in FIG. 9, in the first exposure lithography apparatus 2, a system control unit 70 that is electrically connected to each unit of the apparatus is provided, and the system control unit 70 collectively controls each unit. The system control unit 70 controls the AC palm 62 to perform a loading operation and a discharging operation of the exposed substrate C toward the stage 10. Further, the system control unit 70 controls the movement of the stage 10 while controlling the stage driving unit 71, and the imaging unit 23 performs imaging of the alignment mark M to adjust the lithographic position of the image. Further, the system control unit 70 controls the light source unit 17 and the image processing unit 19 to cause the exposure head 16a to perform exposure processing. The operation device 73 has a display portion and an input portion, and operates, for example, when an external size of the substrate C to be exposed is input.
基板載置位置決定部72將被曝光基板C的相對於平台10的載置位置決定為適當的配置位置(以下稱作「適當載置位置」)。另外,藉由在Y方向上對攝影部23的攝像時機進行調整而使對準用的標記M位於攝影區域的中央。因此,Y方向上的適當載置位置亦可設置於平台10上的任一位置。而且,本實施形態中,X方向上的適當載置位置設定於被曝光基板C的中心與平台10的中心一致的位置。 The substrate placement position determining unit 72 determines the placement position of the substrate C to be exposed with respect to the stage 10 as an appropriate arrangement position (hereinafter referred to as "appropriate placement position"). Further, the alignment mark M is placed at the center of the imaging area by adjusting the imaging timing of the imaging unit 23 in the Y direction. Therefore, an appropriate placement position in the Y direction can also be placed at any position on the platform 10. Further, in the present embodiment, an appropriate placement position in the X direction is set at a position where the center of the exposed substrate C coincides with the center of the stage 10.
基板載置位置決定部72中,根據藉由在對被曝光基板C 進行曝光動作之前所進行的準備動作而獲得的資訊,算出X方向上的基板的適當載置位置(對準用的標記M的適當位置)。該準備動作中,系統控制部70在X方向上將被曝光基板C載置於平台10的適當的位置之後,進行藉由攝影部23對對準用的標記M進行攝影的控制。另外,以在Y方向上使被曝光基板C的中心與平台10的中心一致,且平台10的一方的相對向的邊與被曝光基板C的一方的相對向的邊分別平行的方式載置。而且,系統控制部70算出X方向上的攝影區域的中心位置與對準用的標記M的位置的偏移量。然後,系統控制部70根據該偏移量算出X方向上的基板的適當載置位置。在準備動作中,藉由對多塊(例如5塊)基板進行該處理,而能夠更正確地求出適當的載置位置。另外,在該準備動作中,亦決定攝影部23的攝影時機。所算出的基板的適當載置位置資訊、及攝影時機資訊被送至系統控制部70而記憶於系統控制部70所具有的記憶機構。 The substrate placement position determining unit 72 is based on the substrate C to be exposed The information obtained by the preparatory operation performed before the exposure operation is calculated, and the appropriate placement position of the substrate in the X direction (the appropriate position of the alignment mark M) is calculated. In the preparation operation, the system control unit 70 controls the imaging unit C to image the alignment mark M after the exposure substrate C is placed at an appropriate position on the stage 10 in the X direction. Further, the center of the substrate C to be exposed is aligned with the center of the stage 10 in the Y direction, and one of the opposing sides of the stage 10 and the opposite side of the substrate C to be exposed are placed in parallel. Further, the system control unit 70 calculates the amount of shift between the center position of the photographing region in the X direction and the position of the mark M for alignment. Then, the system control unit 70 calculates an appropriate placement position of the substrate in the X direction based on the offset amount. In the preparation operation, by performing this processing on a plurality of (for example, five) substrates, it is possible to more accurately obtain an appropriate placement position. Further, in this preparation operation, the imaging timing of the imaging unit 23 is also determined. The calculated appropriate placement position information of the substrate and the imaging timing information are sent to the system control unit 70 and stored in the memory mechanism of the system control unit 70.
移動控制部74根據系統控制部70的指示,對攝影部23的移動驅動進行控制。本實施形態中,移動控制部74在平台10的移動時,以微影於多個標記形成部52或被曝光基板C的多個對準用的標記M通過多個攝影部23的各自的攝影區域的方式,來對攝影部23的移動驅動進行控制。 The movement control unit 74 controls the movement drive of the imaging unit 23 in accordance with an instruction from the system control unit 70. In the present embodiment, the movement control unit 74 passes through the respective imaging regions of the plurality of imaging units 23 by the plurality of alignment marks M that are lithographically formed on the plurality of mark forming portions 52 or the exposed substrate C during the movement of the stage 10. In the manner, the movement drive of the photographing unit 23 is controlled.
移動控制部74根據系統控制部70的指示,而分別對移動單元32a~移動單元32d的驅動進行控制。移動控制部74監視來自移動單元32a~移動單元32d的光感測器49的信號(有基板 信號或無基板信號)。而且,移動控制部74根據該信號對移動單元32a~移動單元32d的空氣氣缸41及皮帶驅動馬達47的驅動進行控制,而使夾桿31a~夾桿31d進行夾緊動作。 The movement control unit 74 controls the driving of the moving unit 32a to the moving unit 32d in accordance with an instruction from the system control unit 70. The movement control unit 74 monitors signals from the light sensor 49 of the moving unit 32a to the moving unit 32d (with a substrate) Signal or no substrate signal). Further, the movement control unit 74 controls the driving of the air cylinder 41 and the belt drive motor 47 of the moving unit 32a to the moving unit 32d based on the signal, and causes the clamping lever 31a to the clamping lever 31d to perform the clamping operation.
移動控制部74中,根據自操作裝置73輸入的基板尺寸資訊、及藉由準備動作而算出的基板的適當載置位置資訊,來推測平台10上的區域中載置有被曝光基板C的區域。而且,移動控制部74根據該推測的區域將夾桿31a~夾桿31d的移動速度在高速/低速之間切換。具體而言,在平台10上,在比與被曝光基板C的周緣隔開了距離L1(例如40 mm)的位置(參照圖6)靠外側設定為高速移動,在比該位置靠內側設定為低速移動。藉此,因在低速移動時進行被曝光基板C的檢測,故可確實地檢測被曝光基板C。另外,將與被曝光基板C的周緣隔開了距離L1的位置稱作減速位置(切換點)。夾桿31a~夾桿31d於自檢測到被曝光基板C的位置向內側深入了規定距離(例如5 mm)的夾緊位置處停止,且在該夾緊位置進行夾緊。該夾緊位置成為夾桿31a~夾桿31d的支持柱35不抵接於被曝光基板C的端緣的位置。 The movement control unit 74 estimates the area on which the substrate C to be exposed is placed in the region on the stage 10 based on the substrate size information input from the operation device 73 and the appropriate placement position information of the substrate calculated by the preparatory operation. . Further, the movement control unit 74 switches the moving speed of the clamp lever 31a to the clamp lever 31d between the high speed and the low speed based on the estimated area. Specifically, the stage 10 is set to be moved at a high speed outside the position (see FIG. 6 ) at a distance L1 (for example, 40 mm) from the periphery of the substrate C to be exposed, and is set to be inside the position. Move at low speed. Thereby, since the detection of the substrate C to be exposed is performed at the time of low speed movement, the substrate C to be exposed can be reliably detected. Further, a position separated from the periphery of the substrate C to be exposed by a distance L1 is referred to as a deceleration position (switching point). The clamp lever 31a to the clamp lever 31d are stopped at a clamp position that has penetrated a predetermined distance (for example, 5 mm) from the position where the substrate C to be exposed is detected, and is clamped at the clamp position. This clamp position is a position at which the support post 35 of the clamp lever 31a to the clamp lever 31d does not abut against the edge of the substrate C to be exposed.
移動控制部74在夾桿31a~夾桿31d高速移動時檢測到被曝光基板C的情況下,判斷為實際的基板尺寸比所輸入的基板尺寸大。在該情況下,移動控制部74使夾桿31a~夾桿31d的移動停止並且對系統控制部70輸出異常信號。系統控制部70接收異常信號,使操作裝置73的顯示部顯示內容為基板尺寸大的錯誤資訊。另外,亦可代替顯示錯誤資訊而發出警告音。 When the exposure substrate C is detected when the clamp lever 31a to the clamp lever 31d move at a high speed, the movement control unit 74 determines that the actual substrate size is larger than the input substrate size. In this case, the movement control unit 74 stops the movement of the clamp lever 31a to the clamp lever 31d and outputs an abnormality signal to the system control unit 70. The system control unit 70 receives the abnormality signal, and causes the display unit of the operation device 73 to display the error information having a large substrate size. In addition, a warning tone can be issued instead of displaying an error message.
而且,移動控制部74在夾桿31a~夾桿31d低速移動而未檢測到被曝光基板C且低速移動持續規定時間的情況下,判斷為實際的基板尺寸比所輸入的基板尺寸小、或並未載置有基板。在該情況下,移動控制部74使夾桿31a~夾桿31d的移動停止並且對系統控制部70輸出異常信號。系統控制部70接收異常信號,使操作裝置73的顯示部顯示內容為基板尺寸小、或未載置有被曝光基板C的錯誤資訊。 Further, when the clamp lever 31a to the clamp lever 31d move at a low speed and the substrate C is not detected and the low speed is moved for a predetermined period of time, the movement control unit 74 determines that the actual substrate size is smaller than the input substrate size or The substrate is not placed. In this case, the movement control unit 74 stops the movement of the clamp lever 31a to the clamp lever 31d and outputs an abnormality signal to the system control unit 70. The system control unit 70 receives the abnormality signal, and causes the display unit of the operation device 73 to display the error information that the substrate size is small or the substrate C to be exposed is not placed.
圖10是表示在本實施形態的曝光微影系統1中平台10的移動方向與攝影部23的移動方向的關係的圖。如圖10所示,攝影部23的移動方向為在水平方向上相對於平台10的移動方向(Y方向)垂直的方向(X方向)。曝光微影系統1中,利用攝影部23對微影於多個紫外線光源51或被曝光基板C的對準用的標記M進行攝影時,藉由使平台10移動而控制Y方向的位置。而且,曝光微影系統1中,藉由使攝影部23移動而控制X方向的位置。藉由該些,以多個標記形成部52或對準用的標記M包含於攝影部23的攝影區域的方式來控制各自的相對位置。另外,攝影部23的移動方向並不限定於X方向。亦即,只要能夠對微影於標記形成部52或被曝光基板C的對準用的標記M進行攝影即可。因此,攝影部23的移動方向能夠沿X方向及Y方向的雙方移動即可,或者能夠沿X方向及Y方向以外的其他方向移動即可。 FIG. 10 is a view showing a relationship between the moving direction of the stage 10 and the moving direction of the imaging unit 23 in the exposure lithography system 1 of the embodiment. As shown in FIG. 10, the moving direction of the photographing portion 23 is a direction (X direction) perpendicular to the moving direction (Y direction) of the stage 10 in the horizontal direction. In the exposure lithography system 1, when the photographic image is photographed by the imaging unit 23 for aligning the plurality of ultraviolet light sources 51 or the exposed substrate C, the position in the Y direction is controlled by moving the stage 10. Further, in the exposure lithography system 1, the position in the X direction is controlled by moving the imaging unit 23. By this, the respective relative positions are controlled such that the plurality of mark forming portions 52 or the markings M for alignment are included in the imaging region of the imaging portion 23. Further, the moving direction of the imaging unit 23 is not limited to the X direction. In other words, it is only necessary to photograph the mark M for alignment of the lithography on the mark forming portion 52 or the exposed substrate C. Therefore, the moving direction of the imaging unit 23 can be moved in both the X direction and the Y direction, or can be moved in other directions than the X direction and the Y direction.
圖11是表示本實施形態的曝光微影系統1的紫外線光源51的可動範圍R的圖。如圖11所示,紫外線光源51以如下方 式構成:可自平台10的端部(本實施形態中,自平台10的邊部的中央部)朝向中央部直線狀地僅以規定距離移動。當紫外線光源51在被曝光基板C上將對準用的標記M進行微影時,在平台10上載置著被曝光基板C的狀態下,使紫外線光源51產生紫外線光束UV。此時,紫外線光源51移動至對準用的標記M在被曝光基板C的端部被微影的位置。紫外線光源51的可動範圍R並不限於此,亦可設為包含自可對設為曝光對象的最小尺寸的基板將對準用的標記M進行微影的位置至最大尺寸的基板的端面的位置為止的範圍。理想的是可對作為曝光對象的所有尺寸的基板將對準用的標記M對準微影的最小的範圍。 Fig. 11 is a view showing a movable range R of the ultraviolet light source 51 of the exposure lithography system 1 of the embodiment. As shown in FIG. 11, the ultraviolet light source 51 is as follows The configuration can be moved linearly from the end of the platform 10 (in the present embodiment, from the central portion of the side portion of the platform 10) toward the central portion by a predetermined distance. When the ultraviolet light source 51 lithographically marks the alignment mark M on the substrate C to be exposed, the ultraviolet light source 51 generates the ultraviolet light beam UV in a state where the exposed substrate C is placed on the stage 10. At this time, the ultraviolet light source 51 is moved to a position at which the mark M for alignment is lithographically formed at the end of the substrate C to be exposed. The movable range R of the ultraviolet light source 51 is not limited thereto, and may be a position including a position where the alignment mark M is lithographically applied to the end surface of the substrate having the smallest size from the substrate of the smallest size to be exposed. The scope. It is desirable to align the alignment mark M with the smallest range of the lithography to the substrates of all sizes as the exposure target.
然後,對本實施形態的作用進行說明。 Next, the action of this embodiment will be described.
圖12是表示本實施形態的曝光前處理程式的處理的流程的流程圖,該程式預先記憶於第1曝光微影裝置2的系統控制部70中所具備的作為記錄媒體的唯讀記憶體(read only memory,ROM)的規定區域。而且,圖13是用於說明本實施形態的曝光前處理的示意正視圖。 FIG. 12 is a flowchart showing the flow of processing of the pre-exposure processing program of the first embodiment, and the program is stored in advance in the read-only memory as a recording medium provided in the system control unit 70 of the first exposure lithography apparatus 2 ( Read only memory, ROM) specified area. FIG. 13 is a schematic front view for explaining pre-exposure processing in the present embodiment.
第1曝光微影裝置2的系統控制部70在預定的時機(本實施形態中,為被曝光基板C載置於平台10的時機),執行該曝光前處理程式。 The system control unit 70 of the first exposure lithography apparatus 2 executes the pre-exposure processing program at a predetermined timing (in the present embodiment, the timing at which the substrate C to be exposed is placed on the stage 10).
若將被曝光基板C載置於平台10,則在步驟S101中,系統控制部70使紫外線光源51相對於被曝光基板C的位置移動。本實施形態中,紫外線光源51與基板夾緊機構部30的移動 單元32a~移動單元32d的移動聯動地移動。因此,系統控制部70藉由對移動單元32a進行控制,而開始自打開狀態的夾桿31a~夾桿31d的平台10的端部向中央部的移動,從而使紫外線光源51的位置移動。而且,系統控制部70在自光感測器49接收到有基板信號的情況下,在接收的位置或接收後僅移動了規定距離的位置,使夾桿31a~夾桿31d轉移至閉合狀態。藉此,夾桿31a~夾桿31d在其與平台10之間夾入了被曝光基板C的狀態下被固定,隨之,紫外線光源51的位置亦被固定。 When the substrate C to be exposed is placed on the stage 10, the system control unit 70 moves the position of the ultraviolet light source 51 with respect to the substrate C to be exposed in step S101. In the present embodiment, the movement of the ultraviolet light source 51 and the substrate clamping mechanism unit 30 The movement of the unit 32a to the movement unit 32d moves in conjunction with each other. Therefore, the system control unit 70 controls the movement of the moving unit 32a to start the movement of the end portion of the stage 10 of the clamp lever 31a to the clamp lever 31d from the open state toward the center portion, thereby moving the position of the ultraviolet light source 51. Further, when the substrate sensor receives the substrate signal from the photo sensor 49, the system control unit 70 shifts the clamp lever 31a to the clamp lever 31d to the closed state only after the received position or the position after the predetermined distance has been moved. As a result, the clamp lever 31a to the clamp lever 31d are fixed in a state in which the exposed substrate C is sandwiched between the clamp lever 31a and the stage 10, and the position of the ultraviolet light source 51 is also fixed.
另外,在藉由夾桿31a~夾桿31d進行非曝光基板C的夾入的情況下,或在藉由與夾桿31a~夾桿31d不同的移動機構使紫外線光源51移動的情況下,非曝光基板C在載置於平台10前移動至規定位置。 In the case where the non-exposed substrate C is sandwiched by the clamp lever 31a to the clamp lever 31d, or when the ultraviolet light source 51 is moved by a movement mechanism different from the clamp lever 31a to the clamp lever 31d, The exposure substrate C is moved to a predetermined position before being placed on the stage 10.
步驟S103中,系統控制部70藉由攝影部23對與多個紫外線光源51相對應的校正用標記53的各個進行攝影,利用上述方法自該攝影圖像導出紫外線光源51的位置。另外,測量位置的方法並不限定於上述方法,亦可為如下方法:在被曝光基板C載置於平台10之前等可藉由攝影部23對紫外線光源51進行攝影的情況下,對紫外線光源51進行攝影,並根據該攝影圖像測量紫外線光源51的位置。 In step S103, the system control unit 70 captures each of the calibration marks 53 corresponding to the plurality of ultraviolet light sources 51 by the imaging unit 23, and derives the position of the ultraviolet light source 51 from the captured image by the above method. Further, the method of measuring the position is not limited to the above method, and may be a method in which the ultraviolet light source 51 is photographed by the photographing unit 23 before the substrate C to be exposed is placed on the stage 10, and the ultraviolet light source is used. The photographing is performed 51, and the position of the ultraviolet light source 51 is measured based on the photographed image.
而且,步驟S105中,系統控制部70在平台10上設定相對應的座標系(以下,稱作「平台座標系」),並結束曝光前處理程式。如圖13所示,在曝光前處理的階段,在平台座標系中已 知的位置處配置著各個紫外線光源51。 Further, in step S105, the system control unit 70 sets a corresponding coordinate system (hereinafter referred to as "platform coordinate system") on the platform 10, and ends the pre-exposure processing program. As shown in Figure 13, in the stage of pre-exposure processing, in the platform coordinate system Each of the ultraviolet light sources 51 is disposed at a known position.
第1曝光微影裝置2的系統控制部70在曝光前處理結束而將被曝光基板C載置於平台10之後,執行第1曝光處理。圖14是表示本實施形態的第1曝光處理程式的處理的流程的流程圖,該程式預先記憶於第1曝光微影裝置2的系統控制部70中所具備的作為記錄媒體的ROM的規定區域。而且,圖15是用於說明本實施形態的第1曝光處理的示意正視圖。 The system control unit 70 of the first exposure lithography apparatus 2 performs the first exposure processing after the pre-exposure processing is completed and the exposed substrate C is placed on the stage 10. FIG. 14 is a flowchart showing a flow of processing of the first exposure processing program of the first embodiment, and the program is stored in advance in a predetermined area of the ROM as a recording medium provided in the system control unit 70 of the first exposure lithography apparatus 2. . Fig. 15 is a schematic front view for explaining the first exposure process of the embodiment.
步驟S201中,系統控制部70根據步驟S103中測量到的紫外線光源51的位置,設定用以對被曝光基板C微影表面用圖像P1的座標系即圖像座標系。如圖15所示,在第1曝光處理的階段,根據紫外線光源51相對於平台座標系的位置來設定圖像座標系。亦可對任意的圖像座標系導入紫外線光源51的位置。 In step S201, the system control unit 70 sets an image coordinate system which is a coordinate system for the image P1 for the lithographic surface of the substrate C to be exposed, based on the position of the ultraviolet light source 51 measured in step S103. As shown in FIG. 15, at the stage of the first exposure processing, the image coordinate system is set in accordance with the position of the ultraviolet light source 51 with respect to the platform coordinate system. The position of the ultraviolet light source 51 can also be introduced to any image coordinate system.
步驟S203中,系統控制部70根據步驟S201中設定的圖像座標系,使平台10向曝光位置移動。此時,系統控制部70使平台10沿著導軌14而在Y方向上移動。而且,系統控制部70使平台10移動至曝光頭16a的曝光對象位置與在被曝光基板C中對表面用圖像P1進行微影時的開始位置一致的位置為止。 In step S203, the system control unit 70 moves the stage 10 to the exposure position based on the image coordinate system set in step S201. At this time, the system control unit 70 moves the stage 10 in the Y direction along the guide rail 14. Further, the system control unit 70 moves the stage 10 to the position where the exposure target position of the exposure head 16a coincides with the start position at which the surface image P1 is lithographically reflected on the substrate C to be exposed.
步驟S205中,系統控制部70開始藉由各曝光頭16a而進行的曝光,將表面用圖像P1微影於被曝光基板C的表面C1的基於步驟S201中設定的圖像座標系的位置。而且,步驟S207中,系統控制部20使紫外線光源51產生紫外線光束UV,在被曝光基板C的背面C2將對準用的標記M進行微影。另外,步驟205的 對被曝光基板C的表面C1的處理與步驟S207的對被曝光基板C的背面C2的處理為不妨礙相互的處理者。亦即,第1曝光微影裝置2可使上述各處理同時並行地進行,因而亦可同時進行步驟S205及步驟S207的處理。或者,第1曝光微影裝置2亦可在步驟S205的處理之前進行步驟S207的處理。如圖15所示,根據圖像座標系,在被曝光基板C的表面C1對表面用圖像P1進行微影,在背面C2將對準用的標記M進行微影。 In step S205, the system control unit 70 starts exposure by each exposure head 16a, and lithographically images the surface image P1 on the surface C1 of the substrate C to be exposed based on the position of the image coordinate system set in step S201. Further, in step S207, the system control unit 20 causes the ultraviolet light source 51 to generate the ultraviolet light beam UV, and lithographically marks the alignment mark M on the back surface C2 of the substrate C to be exposed. In addition, step 205 The processing of the surface C1 of the substrate C to be exposed and the processing of the back surface C2 of the substrate C to be exposed in step S207 are not mutually exclusive. In other words, the first exposure lithography apparatus 2 can simultaneously perform the above-described respective processes in parallel, and thus the processes of steps S205 and S207 can be simultaneously performed. Alternatively, the first exposure lithography apparatus 2 may perform the processing of step S207 before the processing of step S205. As shown in FIG. 15, according to the image coordinate system, the surface image P1 is lithographically formed on the surface C1 of the substrate C to be exposed, and the alignment mark M is lithographically formed on the back surface C2.
如此,在對被曝光基板C的表面C1將表面用圖像P1進行微影的處理中,在背面C2將對準用的標記M進行微影,藉此無須另外進行微影對準用的標記M的處理。因此,不會對曝光微影處理的週期時間造成影響,而可確保對準用的標記M的烘烤的保持時間(holding time)長。結果,可提高對背面C2的微影處理中的對準用的標記M的攝影圖像的對比度,因此可抑制對準用的標記M的識別偏差。 As described above, in the process of lithographically patterning the surface image P1 on the surface C1 of the substrate C to be exposed, the alignment mark M is lithographically formed on the back surface C2, thereby eliminating the need for additionally performing the mark M for lithography alignment. deal with. Therefore, the cycle time of the exposure lithography process is not affected, and the holding time of the baking of the mark M for alignment can be ensured to be long. As a result, the contrast of the photographic image of the mark M for alignment in the lithography processing of the back surface C2 can be improved, so that the recognition deviation of the mark M for alignment can be suppressed.
另外,對準用的標記M在被紫外線光束UV照射後進行烘烤,藉此在被曝光基板C上可目測確認地進行顯示,因此藉由利用攝影部23進行攝影,而可確認其位置或形狀。 In addition, since the mark M for alignment is baked by the ultraviolet light beam UV and is baked, the display can be visually confirmed on the substrate C to be exposed. Therefore, the image can be confirmed by the image capturing unit 23, and the position or shape can be confirmed. .
步驟S209中,系統控制部70使平台10移動至載置有被曝光基板C的位置為止,並結束第1曝光處理程式。當平台10移動至被曝光基板C的載置位置為止時,被曝光基板C藉由吸附保持於AC掌62而移動至第2搬送裝置6。而且,被曝光基板C藉由第2搬送裝置6而搬送至反轉裝置3,且藉由反轉裝置3而表 背反轉之後,藉由第3搬送裝置7搬送至第2曝光微影裝置4。 In step S209, the system control unit 70 moves the stage 10 to the position where the substrate C to be exposed is placed, and ends the first exposure processing program. When the stage 10 is moved to the placement position of the substrate C to be exposed, the exposed substrate C is moved to the second transfer device 6 by being held by the AC palm 62 by suction. Further, the exposed substrate C is transported to the inverting device 3 by the second transfer device 6, and is represented by the inverting device 3 After the back-reversal, the third transfer device 7 is transported to the second exposure lithography apparatus 4.
第2曝光微影裝置4的系統控制部70在預定的時機(本實施形態中,為將被曝光基板C載置於平台10的時機),執行該曝光前處理程式。 The system control unit 70 of the second exposure lithography apparatus 4 executes the pre-exposure processing program at a predetermined timing (in the present embodiment, the timing at which the substrate C to be exposed is placed on the stage 10).
圖16是表示本實施形態的第2曝光處理程式的處理的流程的流程圖,該程式預先記憶於第2曝光微影裝置4的系統控制部70中所具備的作為記錄媒體的ROM的規定區域。而且,圖17是用於說明本實施形態的第2曝光處理的示意正視圖。 FIG. 16 is a flowchart showing a flow of processing of the second exposure processing program of the second embodiment of the present invention. The program is stored in advance in a predetermined area of the ROM as a recording medium provided in the system control unit 70 of the second exposure lithography apparatus 4. . Fig. 17 is a schematic front view for explaining a second exposure process of the embodiment.
步驟S301中,系統控制部70使載置有被曝光基板C的平台10移動至如下的位置,即,步驟S207中微影的對準用的標記M的整體包含於攝像裝置23的攝像圖像的位置。此時,系統控制部70使平台10沿著導軌14而在Y方向上移動,並且使平台10移動至如下位置,即設置有攝影部23的位置與設置有對準用的標記M的位置在Y方向上大致一致的位置為止。 In step S301, the system control unit 70 moves the stage 10 on which the substrate C to be exposed is placed to a position in which the entire mark M for alignment of the lithography is included in the captured image of the image pickup device 23 in step S207. position. At this time, the system control unit 70 moves the stage 10 along the guide rail 14 in the Y direction, and moves the stage 10 to a position where the position of the photographing portion 23 and the position of the mark M for alignment are set at Y. The position is roughly the same in the direction.
另外,攝影部23的攝影區域為被曝光基板C的背面C2上設置有對準用的標記M的區域,且設為比包含被曝光基板C的設置誤差的區域大。藉此,即便在被曝光基板C的設置位置自預先設定的設置位置偏移的情況下,只要以設定為對準用的標記M的中心部所在的位置為中心進行攝影,則包含於區域攝影部23的攝影區域。 In addition, the imaging area of the imaging unit 23 is a region in which the alignment mark M is provided on the back surface C2 of the substrate C to be exposed, and is larger than a region including the installation error of the substrate C to be exposed. In this case, even if the installation position of the substrate C to be exposed is shifted from the preset installation position, the image capturing unit is included in the area where the center portion of the mark M for alignment is set. 23 photography area.
步驟S303中,系統控制部70根據藉由攝像部23攝像對準用的標記M的攝像圖像,來測量對準用的標記M的位置。而 且,步驟S305中,系統控制部70根據步驟S303中測量到的對準用的標記M的位置,來設定用以決定對於被曝光基板C的背面C2對背面用圖像P2進行微影的位置的圖像座標系。此時,圖像座標系以與步驟S201中所設定的圖像座標系相對應的方式來設定。亦即,以如下方式來設定,即,步驟S103中測量到的紫外線光源51的位置與表面用圖像C1的微影位置的相對位置,和對準用的標記M的位置與背面用圖像C2的微影位置的相對位置相互對應。如圖17所示,在第2曝光處理的階段,根據對準用的標記M的位置來設定圖像座標系,因此亦存在如下情形:平台座標系與圖像座標系的相對位置與第1曝光處理的階段不同。 In step S303, the system control unit 70 measures the position of the marker M for alignment based on the captured image of the marker M for imaging by the imaging unit 23. and In step S305, the system control unit 70 sets the position for determining the lithography of the back surface image P2 with respect to the back surface C2 of the substrate C to be exposed, based on the position of the alignment mark M measured in step S303. Image coordinate system. At this time, the image coordinates are set in a manner corresponding to the image coordinate system set in step S201. That is, it is set in such a manner that the position of the ultraviolet light source 51 measured in step S103 and the position of the lithography position of the surface image C1, and the position of the mark M for alignment and the image for back surface C2 are set. The relative positions of the lithographic positions correspond to each other. As shown in FIG. 17, at the stage of the second exposure processing, the image coordinate system is set according to the position of the alignment mark M. Therefore, there is also a case where the relative position of the platform coordinate system and the image coordinate system and the first exposure are as follows. The stages of processing are different.
步驟S307中,系統控制部70根據步驟S305中所設定的圖像座標系,使平台10移動至曝光位置。此時,系統控制部70使平台10沿著導軌14而在Y方向上移動。而且,系統控制部70使平台10移動至曝光頭16a的曝光對象位置與被曝光基板C中對背面用圖像P2進行微影時的開始位置一致的位置為止。 In step S307, the system control unit 70 moves the stage 10 to the exposure position based on the image coordinate system set in step S305. At this time, the system control unit 70 moves the stage 10 in the Y direction along the guide rail 14. Further, the system control unit 70 moves the stage 10 to a position where the exposure target position of the exposure head 16a coincides with the start position at which the back surface image P2 is lithographically reflected in the substrate C to be exposed.
步驟S309中,系統控制部70開始藉由各曝光頭16a進行曝光,在被曝光基板C的背面C2對背面用圖像P2進行微影。如圖17所示,根據圖像座標系,在被曝光基板C的背面C2對背面用圖像P2進行微影。 In step S309, the system control unit 70 starts exposure by the exposure heads 16a, and lithographically images the back surface image P2 on the back surface C2 of the substrate C to be exposed. As shown in FIG. 17, the back surface image P2 is lithographically formed on the back surface C2 of the substrate C to be exposed according to the image coordinate system.
步驟S311中,系統控制部70使平台10移動至載置有被曝光基板C的位置為止,並結束第2曝光處理程式。當平台10移動至被曝光基板C的載置位置為止時,在圖像被表面C1及背面 C2的兩面微影的被曝光基板C藉由吸附保持於AC掌62而移動至第4搬送裝置8,且藉由第4搬送裝置8而搬送。 In step S311, the system control unit 70 moves the stage 10 to the position where the substrate C to be exposed is placed, and ends the second exposure processing program. When the stage 10 is moved to the placement position of the substrate C to be exposed, the image is subjected to the surface C1 and the back surface. The exposed substrate C on both sides of the C2 is moved to the fourth transfer device 8 by suction and holding on the AC palm 62, and is transported by the fourth transfer device 8.
圖18是表示本實施形態的曝光微影系統1中,被曝光基板C的尺寸與對準用的標記M的微影位置的關係的示意正視圖。本實施形態中,當藉由基板夾緊機構部30的移動單元32a~移動單元32d而夾桿31a~夾桿31d移動時,紫外線光源51與該移動聯動地移動。因此,如圖18所示,光感測器49檢測被曝光基板C的端部而夾桿31a~夾桿31d將被曝光基板C的端部予以固定,藉此紫外線光源51自動地固定於對被曝光基板C的端部、照射紫外線光束UV的位置。而且,夾桿31a~夾桿31d的位置與紫外線光源51的位置關係可自由地設計。藉此,本實施形態中,可不依存於被曝光基板C的尺寸,而在被曝光基板C的預定的位置將對準用的標記M進行微影。 FIG. 18 is a schematic front view showing the relationship between the size of the substrate C to be exposed and the lithography position of the mark M for alignment in the exposure lithography system 1 of the embodiment. In the present embodiment, when the clamp lever 31a to the clamp lever 31d are moved by the moving unit 32a to the moving unit 32d of the substrate clamping mechanism unit 30, the ultraviolet light source 51 moves in conjunction with the movement. Therefore, as shown in FIG. 18, the photo sensor 49 detects the end of the substrate C to be exposed, and the clips 31a to 31d fix the end portion of the exposed substrate C, whereby the ultraviolet light source 51 is automatically fixed to the pair. The end of the substrate C to be exposed is irradiated with the ultraviolet light beam UV. Further, the positional relationship between the positions of the clamp bars 31a to 31d and the ultraviolet light source 51 can be freely designed. Thereby, in the present embodiment, the alignment mark M can be lithographically formed at a predetermined position of the substrate C to be exposed without depending on the size of the substrate C to be exposed.
另外,步驟S103中對紫外線光源51的位置進行測量的方法根據所求出的測量精度而有所不同,基板夾緊機構部30的移動單元32a~移動單元32d亦可包括步進馬達(stepping motor),藉由該步進馬達的脈衝來進行測量。或者,移動單元32a~移動單元32d亦可包括旋轉編碼器(rotary encoder),藉由旋轉編碼器的脈衝來測量位置。或者,亦可預先在第1曝光微影裝置2的任一部位設置光學式距離感測器或利用了超音波的距離感測器,藉由該些距離感測器來測量位置。 Further, the method of measuring the position of the ultraviolet light source 51 in step S103 differs depending on the obtained measurement accuracy, and the moving unit 32a to the moving unit 32d of the substrate clamping mechanism unit 30 may also include a stepping motor (stepping motor). The measurement is performed by the pulse of the stepping motor. Alternatively, the mobile unit 32a to the mobile unit 32d may also include a rotary encoder that measures the position by rotating the pulses of the encoder. Alternatively, an optical distance sensor or a distance sensor using ultrasonic waves may be provided in any part of the first exposure lithography apparatus 2 in advance, and the position may be measured by the distance sensors.
而且,本實施形態中,圓狀的校正用標記53設置有2 個以上,根據該2個以上的校正用標記53與紫外線光源51的位置關係而導出紫外線光源51的位置。然而,校正用標記53的形狀或個數並不限於此,校正用標記的形狀可任意地設定。而且,在為校正用標記53的形狀表示箭頭型的標記等的位置及紫外線光源51的方向的標記的情況下,即便所設置的校正用標記53為一個,亦可根據該校正用的標記53的位置及方向來導出紫外線光源51的位置。 Further, in the present embodiment, the circular correction mark 53 is provided with 2 The position of the ultraviolet light source 51 is derived based on the positional relationship between the two or more correction marks 53 and the ultraviolet light source 51. However, the shape or the number of the correction marks 53 is not limited thereto, and the shape of the correction marks can be arbitrarily set. In the case where the shape of the correction mark 53 indicates the position of the arrow type mark or the like and the direction of the ultraviolet light source 51, even if the correction mark 53 is provided, the correction mark 53 can be used. The position and direction of the ultraviolet light source 51 are derived.
而且,在根據自攝影圖像中的紫外線光源51的位置的理論值偏離的偏離量來測量紫外線光源51的位置的情況下,較佳為紫外線光源51位於攝像部23的焦點深度內。然而,在紫外線光源51不位於攝像部23的焦點深度內的情況下,可以紫外線光源51位於攝像部23的焦點深度內的方式來變更平台10的高度(Z方向上的位置)。 Further, in the case where the position of the ultraviolet light source 51 is measured based on the amount of deviation of the theoretical value of the position of the ultraviolet light source 51 in the self-photographed image, it is preferable that the ultraviolet light source 51 is located within the depth of focus of the imaging unit 23. However, when the ultraviolet light source 51 is not located within the focal depth of the imaging unit 23, the height (the position in the Z direction) of the stage 10 can be changed so that the ultraviolet light source 51 can be positioned within the depth of focus of the imaging unit 23.
而且,本實施形態中,對2個對準用的標記M進行微影,但並不限於此,對準用的標記M的數量只要為2個以上則可任意地設定。對準用的標記M的數量越多,則越可提高被曝光基板C的表背的對準精度。 Further, in the present embodiment, the two marks M for alignment are lithographically. However, the number of the marks M for alignment is not limited thereto, and the number of the marks M for alignment can be arbitrarily set. The larger the number of the marks M for alignment, the more the alignment accuracy of the front and back of the substrate C to be exposed can be improved.
而且,本實施形態中,是使用紫外線光源51在被曝光基板C將對準用的標記M進行微影,但並不限於此,亦可藉由噴附油墨或轉印油墨來進行微影。 Further, in the present embodiment, the alignment mark M is lithographically formed on the substrate C to be exposed by the ultraviolet light source 51. However, the present invention is not limited thereto, and lithography may be performed by spraying ink or transfer ink.
而且,本實施形態中,紫外線光源51在X方向上或在Y方向上可移動地設置著,但並不限於此,亦可使用在任意方向 上可移動的紫外線光源。而且,紫外線光源的移動路徑可為橫切被曝光基板C的中央部的路徑,亦可為橫切被曝光基板C的任意的位置的路徑。 Further, in the present embodiment, the ultraviolet light source 51 is movably provided in the X direction or in the Y direction, but the present invention is not limited thereto and may be used in any direction. A movable UV light source. Further, the moving path of the ultraviolet light source may be a path that crosses the central portion of the substrate C to be exposed, or may be a path that crosses an arbitrary position of the substrate C to be exposed.
本實施形態中,使紫外線光源51與夾緊機構部30的移動單元32a~移動單元32d聯動地移動,但並不限於此,亦可藉由包含馬達等的移動機構而使紫外線光源51分別單獨地移動。該情況下,預先記憶被曝光基板C的尺寸及平台10的載置位置,紫外線光源51可設定為根據所記憶的尺寸及載置位置而移動至預定的位置。 In the present embodiment, the ultraviolet light source 51 is moved in conjunction with the moving unit 32a to the moving unit 32d of the clamp mechanism unit 30. However, the present invention is not limited thereto, and the ultraviolet light source 51 may be separately provided by a moving mechanism including a motor or the like. Move on the ground. In this case, the size of the substrate C to be exposed and the placement position of the stage 10 are memorized in advance, and the ultraviolet light source 51 can be set to move to a predetermined position in accordance with the stored size and the placement position.
而且,在步驟S205中表面用圖像P1的微影失敗的情況下,亦可不進行步驟S207的處理(對準用的標記M的微影處理),而轉移至步驟S209的處理。該情況下,在表面用圖像P1的微影失敗的被曝光基板C上未微影有對準用的標記M。因此,用戶可藉由對各個被曝光基板C確認有無對準用的標記M,而可判別表面用圖像P1的微影成功或失敗。 When the lithography of the surface image P1 has failed in step S205, the process of step S207 (the lithography process of the mark M for alignment) may not be performed, and the process proceeds to step S209. In this case, the mark M for alignment is not micro-imaged on the substrate C to be exposed on which the lithography of the surface image P1 has failed. Therefore, the user can determine the success or failure of the lithography of the surface image P1 by confirming the presence or absence of the mark M for the respective exposed substrates C.
2‧‧‧第1曝光微影裝置 2‧‧‧1st exposure lithography device
3‧‧‧反轉裝置 3‧‧‧Reversal device
4‧‧‧第2曝光微影裝置 4‧‧‧2nd exposure lithography device
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JP6465591B2 (en) | 2014-08-27 | 2019-02-06 | 株式会社オーク製作所 | Drawing device |
CN109466189A (en) * | 2018-12-21 | 2019-03-15 | 昆山森特斯印刷技术有限公司 | Chromatography positioning device and chromatography positioning system with the chromatography positioning device |
JP7386742B2 (en) * | 2020-03-24 | 2023-11-27 | 株式会社Screenホールディングス | exposure equipment |
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US6701197B2 (en) * | 2000-11-08 | 2004-03-02 | Orbotech Ltd. | System and method for side to side registration in a printed circuit imager |
SG118239A1 (en) * | 2003-04-24 | 2006-01-27 | Asml Netherlands Bv | Lithographic processing method and device manufactured thereby |
JP2005014012A (en) * | 2003-06-24 | 2005-01-20 | Pentax Corp | Drawing aparatus and drawing method |
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JP4882354B2 (en) * | 2004-12-01 | 2012-02-22 | 株式会社ニコン | Alignment adjusting method, alignment mark forming method, substrate, and transmissive optical element manufacturing method |
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