TW201338092A - 半導體之氣隙的形成方法 - Google Patents
半導體之氣隙的形成方法 Download PDFInfo
- Publication number
- TW201338092A TW201338092A TW101107836A TW101107836A TW201338092A TW 201338092 A TW201338092 A TW 201338092A TW 101107836 A TW101107836 A TW 101107836A TW 101107836 A TW101107836 A TW 101107836A TW 201338092 A TW201338092 A TW 201338092A
- Authority
- TW
- Taiwan
- Prior art keywords
- insulating layer
- forming
- air gap
- layer
- trenches
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000000151 deposition Methods 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 21
- 230000008021 deposition Effects 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims abstract description 10
- 238000009413 insulation Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 34
- 238000002955 isolation Methods 0.000 claims description 23
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical group [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 7
- 125000006850 spacer group Chemical group 0.000 claims description 5
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 4
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 claims description 2
- WXANAQMHYPHTGY-UHFFFAOYSA-N cerium;ethyne Chemical compound [Ce].[C-]#[C] WXANAQMHYPHTGY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- ZKEYULQFFYBZBG-UHFFFAOYSA-N lanthanum carbide Chemical compound [La].[C-]#[C] ZKEYULQFFYBZBG-UHFFFAOYSA-N 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 2
- 238000005121 nitriding Methods 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- GUNJVIDCYZYFGV-UHFFFAOYSA-K antimony trifluoride Chemical compound F[Sb](F)F GUNJVIDCYZYFGV-UHFFFAOYSA-K 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229940105963 yttrium fluoride Drugs 0.000 description 1
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 1
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101107836A TW201338092A (zh) | 2012-03-08 | 2012-03-08 | 半導體之氣隙的形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101107836A TW201338092A (zh) | 2012-03-08 | 2012-03-08 | 半導體之氣隙的形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201338092A true TW201338092A (zh) | 2013-09-16 |
| TWI452651B TWI452651B (https=) | 2014-09-11 |
Family
ID=49628005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101107836A TW201338092A (zh) | 2012-03-08 | 2012-03-08 | 半導體之氣隙的形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW201338092A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI579998B (zh) * | 2015-12-30 | 2017-04-21 | 台灣積體電路製造股份有限公司 | 半導體裝置與其形成方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5305993B2 (ja) * | 2008-05-02 | 2013-10-02 | キヤノン株式会社 | 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子 |
| CN101587857B (zh) * | 2008-05-23 | 2011-03-23 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件互连结构的盖层及其制作方法 |
| US8399354B2 (en) * | 2009-01-13 | 2013-03-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-silicon via with low-K dielectric liner |
-
2012
- 2012-03-08 TW TW101107836A patent/TW201338092A/zh unknown
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI579998B (zh) * | 2015-12-30 | 2017-04-21 | 台灣積體電路製造股份有限公司 | 半導體裝置與其形成方法 |
| US9653348B1 (en) | 2015-12-30 | 2017-05-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9852992B2 (en) | 2015-12-30 | 2017-12-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10157843B2 (en) | 2015-12-30 | 2018-12-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US11355436B2 (en) | 2015-12-30 | 2022-06-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI452651B (https=) | 2014-09-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI682545B (zh) | 用於改良的鰭式裝置性能之氣隙間隔件整合 | |
| TWI577013B (zh) | 具有共面下凹閘極層之半導體結構及製造方法 | |
| CN103378155B (zh) | 伪FinFET结构及其制造方法 | |
| TWI575662B (zh) | 半導體裝置結構與其形成方法 | |
| US9463975B2 (en) | MEMS capacitive pressure sensors | |
| US8994127B2 (en) | Method of fabricating isolating semiconductor structures using a layout of trenches and openings | |
| KR102631107B1 (ko) | 고 종횡비 보쉬 딥 에칭 | |
| CN104377232B (zh) | 具有一个或多个半导体柱形件的半导体布置 | |
| JP6309907B2 (ja) | 半導体装置 | |
| CN105826166A (zh) | 金属-绝缘体-金属（mim）电容器和形成方法 | |
| US9054226B2 (en) | Semiconductor devices and methods of manufacturing the same | |
| US20210288047A1 (en) | Trench capacitor with lateral protrusion strucutre | |
| KR20180058414A (ko) | 액티브 패턴 구조물 및 액티브 패턴 구조물을 포함하는 반도체 소자 | |
| US9437713B2 (en) | Devices and methods of forming higher tunability FinFET varactor | |
| US8216944B2 (en) | Methods of forming patterns in semiconductor devices | |
| CN111370368A (zh) | 一种半导体芯片密封环及其制造方法 | |
| CN103077921B (zh) | 互连线结构及互连线结构的形成方法 | |
| CN107895711A (zh) | 半导体装置的内连结构及其制造方法 | |
| CN102956542B (zh) | 一种半导体器件的制造方法 | |
| CN105097517B (zh) | 一种FinFET器件及其制造方法、电子装置 | |
| TW201338092A (zh) | 半導體之氣隙的形成方法 | |
| CN107293491A (zh) | Vdmos器件的制作方法 | |
| CN102592989B (zh) | 层间电介质的近界面平坦化回刻方法 | |
| TW201541554A (zh) | 模製的介電質奈米結構 | |
| KR20180017041A (ko) | 다수의 에칭 중지 층들을 갖는 벌크 층 트랜스퍼 웨이퍼 |