TW201323661A - 銅和銅合金的蝕刻液 - Google Patents

銅和銅合金的蝕刻液 Download PDF

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Publication number
TW201323661A
TW201323661A TW101132768A TW101132768A TW201323661A TW 201323661 A TW201323661 A TW 201323661A TW 101132768 A TW101132768 A TW 101132768A TW 101132768 A TW101132768 A TW 101132768A TW 201323661 A TW201323661 A TW 201323661A
Authority
TW
Taiwan
Prior art keywords
copper
etching
liquid composition
copper alloy
layer
Prior art date
Application number
TW101132768A
Other languages
English (en)
Chinese (zh)
Inventor
高橋秀樹
Original Assignee
關東化學股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 關東化學股份有限公司 filed Critical 關東化學股份有限公司
Publication of TW201323661A publication Critical patent/TW201323661A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
TW101132768A 2011-09-08 2012-09-07 銅和銅合金的蝕刻液 TW201323661A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011196394A JP5885971B2 (ja) 2011-09-08 2011-09-08 銅および銅合金のエッチング液

Publications (1)

Publication Number Publication Date
TW201323661A true TW201323661A (zh) 2013-06-16

Family

ID=47924114

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101132768A TW201323661A (zh) 2011-09-08 2012-09-07 銅和銅合金的蝕刻液

Country Status (5)

Country Link
JP (1) JP5885971B2 (https=)
KR (1) KR20130028014A (https=)
CN (1) CN102995021A (https=)
SG (1) SG188734A1 (https=)
TW (1) TW201323661A (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6777420B2 (ja) * 2016-04-21 2020-10-28 関東化学株式会社 単層膜または積層膜のエッチング組成物または前記組成物を用いたエッチング方法
CN105887092B (zh) * 2016-04-28 2019-01-15 华南理工大学 一种适用于臭氧回收法的pcb酸性蚀刻液
JP7333755B2 (ja) * 2018-01-05 2023-08-25 株式会社Adeka エッチング液組成物及びエッチング方法
KR102205628B1 (ko) 2019-02-12 2021-01-21 김진호 구리 또는 구리 함유 금속막 식각액 조성물
CN110093606A (zh) * 2019-06-14 2019-08-06 大连亚太电子有限公司 一种用于pcb板的蚀刻液及其制作方法
CN110938822A (zh) * 2019-11-14 2020-03-31 浙江工业大学 一种钼/铜复合金属层的蚀刻液、蚀刻方法与应用
CN111041489B (zh) * 2020-01-03 2021-10-15 易安爱富(武汉)科技有限公司 一种钼/钛合金薄膜蚀刻液组合物及其应用
WO2021251204A1 (ja) * 2020-06-08 2021-12-16 三菱瓦斯化学株式会社 銅または銅合金の表面処理に用いられる化学研磨液および表面処理方法
CN111809183B (zh) * 2020-07-14 2022-08-09 北京航空航天大学宁波创新研究院 一种铜镓合金的金相腐蚀液以及金相显示方法
CN112635553B (zh) * 2020-12-25 2022-09-16 广东省科学院半导体研究所 薄膜晶体管的制作方法和显示装置
JP7569252B2 (ja) * 2021-03-26 2024-10-17 花王株式会社 エッチング液組成物の保存方法
CN113667979A (zh) * 2021-08-05 2021-11-19 Tcl华星光电技术有限公司 铜钼金属蚀刻液及其应用
US12276033B2 (en) 2021-10-19 2025-04-15 Tokyo Electron Limited Methods for wet etching of noble metals
JP2024063315A (ja) * 2022-10-26 2024-05-13 関東化学株式会社 エッチング液組成物およびエッチング方法
WO2024107260A1 (en) * 2022-11-14 2024-05-23 Tokyo Electron Limited Methods for wet etching of noble metals
CN116573782B (zh) * 2023-04-03 2023-11-03 迁安市宏奥工贸有限公司 脱硫废液的处理方法
CN118186394B (zh) * 2024-05-16 2024-08-16 苏州高芯众科半导体有限公司 Tf液晶面板刻蚀腔铝板清洁再生的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4706081B2 (ja) * 2001-06-05 2011-06-22 メック株式会社 銅または銅合金のエッチング剤ならびにエッチング法
JP4069387B2 (ja) * 2003-08-27 2008-04-02 上村工業株式会社 エッチング液
JP4093147B2 (ja) * 2003-09-04 2008-06-04 三菱電機株式会社 エッチング液及びエッチング方法
US7442323B2 (en) * 2006-06-02 2008-10-28 E. I. Du Pont De Nemours And Company Potassium monopersulfate solutions
JP4973231B2 (ja) * 2006-09-05 2012-07-11 日立化成工業株式会社 銅のエッチング処理方法およびこの方法を用いてなる配線基板と半導体パッケージ
US20080224092A1 (en) * 2007-03-15 2008-09-18 Samsung Electronics Co., Ltd. Etchant for metal
KR101310310B1 (ko) * 2007-03-15 2013-09-23 주식회사 동진쎄미켐 박막트랜지스터 액정표시장치의 식각액 조성물
US8518281B2 (en) * 2008-06-03 2013-08-27 Kesheng Feng Acid-resistance promoting composition
KR101520921B1 (ko) * 2008-11-07 2015-05-18 삼성디스플레이 주식회사 식각액 조성물, 이를 사용한 금속 패턴의 형성 방법 및 박막 트랜지스터 표시판의 제조 방법
JP5604056B2 (ja) * 2009-05-15 2014-10-08 関東化学株式会社 銅含有積層膜用エッチング液
CN101807572A (zh) * 2010-02-25 2010-08-18 友达光电股份有限公司 刻蚀液、主动组件阵列基板及其制作方法
KR20120066950A (ko) * 2010-12-15 2012-06-25 삼성전자주식회사 식각액, 이를 이용한 표시 장치 및 그 제조 방법

Also Published As

Publication number Publication date
KR20130028014A (ko) 2013-03-18
SG188734A1 (en) 2013-04-30
JP5885971B2 (ja) 2016-03-16
CN102995021A (zh) 2013-03-27
JP2013058629A (ja) 2013-03-28

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