TW201322501A - 具有形成於溝槽中之反射壁之發光二極體混合室 - Google Patents

具有形成於溝槽中之反射壁之發光二極體混合室 Download PDF

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TW201322501A
TW201322501A TW101129775A TW101129775A TW201322501A TW 201322501 A TW201322501 A TW 201322501A TW 101129775 A TW101129775 A TW 101129775A TW 101129775 A TW101129775 A TW 101129775A TW 201322501 A TW201322501 A TW 201322501A
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mixing chamber
led dies
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Samber Marc Andre De
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Koninkl Philips Electronics Nv
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Abstract

一相對大之基板具有一反射表面，諸如一漫射白色表面。LED晶粒(作為裸LED晶粒或經封裝LED晶粒)安裝至該基板以形成單獨LED陣列。每一陣列意欲用於一單獨混合室。將一層一囊封劑(諸如聚矽氧)沈積於該基板上方以囊封該等LED晶粒。一雷射蝕刻穿透該囊封劑以形成溝槽，且將一反射材料(諸如一白色塗料)沈積於該等溝槽中以形成每一混合室之反射壁。若期望，則將一磷光體層沈積於該囊封劑及反射壁上方。然後將該基板單體化以分離出該等混合室。由於不裝配離散零件，且多個混合室同時地形成，因此所得混合室係不昂貴且極可靠的。

Description

具有形成於溝槽中之反射壁之發光二極體混合室
本發明係關於用於發光二極體(LED)之混合室，且特定而言，係關於形成具有反射壁之一混合室之一種方法。
出於一般發光目的或對於形成用於一LCD顯示器之一背光，已知將一發光二極體陣列安裝於一反射印刷電路板(PCB)上，然後將該PCB安裝於具有反射側壁之一箱中。LED可係紅色、綠色及藍色，其混合物產生白色光，或僅藍色LED可結合一磷光體使用以用於產生白色光。若需要，則通常將一漫射體放置於該箱之頂部上方。由於混合及漫射，因此一大致均勻光自混合室發射。
此一混合室需要對離散零件之處置及裝配。因此，該等混合室係相對昂貴的。
需要的是用於形成含有LED之一混合室之一經改良技術。
以下技術僅係根據本發明用於形成混合室之一方法之一項實施例。其他實施例亦在本發明之範疇內。
提供具有通至電力供應器端子之金屬墊及跡線之一相對大之基板。該基板具有一反射表面，諸如一漫射白色表面。在一項實例中，該基板將形成四個混合室。
LED晶粒(作為裸LED晶粒或經封裝LED晶粒)安裝至該基板以形成單獨LED晶粒陣列。每一陣列意欲用於一單獨 混合室。在該實例中，存在安裝於基板上之四個LED晶粒陣列。
一矩形金屬環經形成在每一LED晶粒陣列周圍用作一雷射蝕刻終止。
將一層一囊封劑(諸如聚矽氧)沈積於基板及金屬環上方以囊封LED晶粒。該囊封劑可作為一液體經沈積且經固化，或該囊封劑可使用熱及壓力經層壓於基板上方且然後經固化以囊封LED晶粒。
然後使用一雷射來蝕刻穿透金屬環上方之該囊封劑以形成溝槽，其中該等金屬環充當一雷射蝕刻終止以防止蝕刻穿透基板。該雷射可視情況沿單體化線蝕刻以使得該囊封劑在隨後單體化程序期間不被鋸割。
然後將一反射材料(諸如一白色塗料)沈積於溝槽中在LED陣列中之每一者周圍以形成每一混合室之反射壁。該反射材料(若係一膏體或液體材料)可容易地擦刮至溝槽中。若需要，則接著將囊封劑之表面清潔。
若LED晶粒僅發射藍色光，且所期望之發射欲係白色光，則可將一磷光體層沈積於囊封劑及反射壁上方。該磷光體層可係近似於基板之大小之一預形成發光塊。
然後將該基板單體化以分離四個混合室。
然後可將所得混合室耦合至一LCD顯示器之背面且用作一背光。由於不裝配離散零件，且多個混合室同時地形成，因此所得混合室係不昂貴且可靠的。
圖1係一反射基板10之一俯視圖。基板10可係由一陶瓷、絕緣金屬、FR-4或其他材料形成之一基台。基板10在其頂表面上具有金屬墊及跡線用於互連安裝於基板10上之複數個LED晶粒12。頂部金屬墊可藉由導通孔連接至底部金屬墊，該等底部金屬墊欲焊接至一印刷電路板或其他裝置之墊。在另一實施例中，不使用導通孔，且頂部金屬墊延伸至欲連接至一電力供應器之頂表面上之其他墊。金屬環14(諸如由銅形成)經展示包圍相關聯LED陣列。
基板10之頂表面可用一反射白色塗料或其他適合反射塗層(諸如一層壓反射層)塗佈。
在每一陣列中可存在任何數目個LED晶粒12，取決於所期望混合室之大小及亮度，且陣列可係任何形狀。在一項實施例中，LED晶粒12係裸、覆晶晶粒。代替地，LED晶粒可具有用於導線接合之一或多個頂部電極。在另一實施例中，LED晶粒12經封裝有或無透鏡。
在一項實施例中，LED晶粒12係全部以GaN為基礎且發射藍色光。在另一實施例中，存在紅色、綠色及藍色LED晶粒12，其光(當混合時)產生白色光。每一LED晶粒12包括n型半導體層、p型半導體層、在n型層與p型層之間的一作用層，及用於電接觸n型層與p型層之至少兩個電極。
圖2係沿圖1中之線2-2展示在基板10之單體化之前供用於一單個混合室中之四個LED晶粒12中之兩者之一剖面圖。將形成於LED晶粒12之底表面上之LED電極16接合至基板10上之對應金屬墊18及20。接合可藉由超音波熔接、 焊接或其他方法。在實例中，LED晶粒12係藉由連接於LED電極16之間的一跡線串聯連接。金屬墊18及20中之至少某些金屬墊係藉由金屬填充導通孔22連接至用於焊接至供應電力至LED晶粒12之一印刷電路板或其他裝置之穩健底部金屬墊23及24。
金屬環14經展示界定每一混合室之界限。
金屬層可藉由印刷(例如，層壓一銅層然後選擇性蝕刻)、濺鍍或任何其他適合技術形成。
LED晶粒12可係大約1 mm2。基板10可係任何大小，諸如具有30 cm或更長之側之一正方形。
圖3圖解說明囊封劑26之一實例，其沈積於基板10上方以氣密封LED晶粒12及提供一高折射率介面材料。囊封劑26可係聚矽氧、SU8、環氧樹脂或其他材料。囊封劑26可作為一液體經旋塗或以其他方式沈積且經固化。另一選擇係，囊封劑26可預形成為一經軟化片且使用熱及壓力經層壓於基板10上。囊封劑26然後經固化。在實例中，囊封劑26之頂表面係實質上平面的，但可使用其他表面形狀。囊封劑26之厚度界定混合室壁之高度。囊封劑26之厚度可僅係數毫米。
圖4圖解說明藉由一例示性355 nm脈衝雷射穿透囊封劑26形成之溝槽28，其中該等溝槽28界定每一混合室之反射壁之位置。金屬環14為雷射提供一蝕刻終止以防止對基板10之損壞。雷射可自動地對準至金屬環14。代替一雷射，可使用任何其他適合遮罩及蝕刻程序。
圖5圖解說明用一反射材料30(諸如經擦刮於囊封劑26之表面上方之一適合白色塗料(例如，含有TiO2))填充之溝槽28。可使用絲網印刷或其他程序。反射材料30可係一液體、膏體、乾燥顆粒或其他適合材料。在固化之後，反射材料30形成混合室之反射壁。若需要，則接著將囊封劑26之頂表面清潔。囊封劑之頂表面可經粗糙化用於增加之光提取及/或用以漫射光。
圖6圖解說明沈積於囊封劑26之頂表面上方(若需要)以產生白色光之一磷光體層34。該磷光體層34可以任何方式沈積。在一項實施例中，磷光體層34係藉由(例如)一薄聚矽氧層貼附至囊封劑26之一預形成片。在其他實施例中，磷光體層34最初係一液體或部分經固化材料且經噴射、經旋塗或以其他方式沈積。另外，磷光體層34可沈積為一連續層，沈積為一預定義圖案(諸如點)，經沈積以具有一漸變厚度，或使用一後處理步驟而圖案化。若期望不單體化穿透磷光體層34，則磷光體可經沈積以便不存在於單體化線上方。
若使用RGB LED晶粒12，則磷光體層34可由一漫射層替代。可視情況將一漫射層沈積於磷光體層34上方。
然後將基板10單體化，諸如藉由在金屬環14之間鋸割。每一混合室可類似圖6。來自各種LED晶粒12之光將藉由來自每一LED晶粒12之寬角發射、自基板10之表面之反射及自側壁之反射混合。磷光體層34亦漫射光。若期望發射之增加之均勻性，則可插入一漫射層，或在沈積磷光體層 34之前使囊封劑26之頂表面經粗糙化或經形成以具有微透鏡。
圖7圖解說明一替代實施例，其中雷射額外地對應於單體化線44穿透囊封劑26蝕刻溝槽40以使得隨後之鋸割不需要切入有機層。在此一情形中，金屬環14可跨越混合室之界限延伸以充當雷射蝕刻終止。
在一項實施例中，每一混合室可含有僅一單個LED晶粒，且光線之混合在混合室之界限內產生一實質上均勻光發射。
如所見，諸多混合室在不處置或裝配單獨零件之情況下以一晶圓規模同時地製造。因此所得混合室係不昂貴且可靠的。
混合室可用於背照任何大小之LCD。出於一般照明目的，混合室亦可用於產生白色光。
儘管已展示及闡述本發明之特定實施例，但將對熟習此項技術者顯而易見的係：可在不背離本發明之更廣泛態樣下進行改變及修改，且因此，隨附申請專利範圍欲將所有此等改變及修改囊括在其範疇內，如同此等改變及修改屬於本發明之真正精神及範疇內一般。
10‧‧‧反射基板/基板
12‧‧‧發光二極體晶粒
14‧‧‧金屬環
16‧‧‧發光二極體電極
18‧‧‧金屬墊
20‧‧‧金屬墊
22‧‧‧金屬填充導通孔
23‧‧‧底部金屬墊
24‧‧‧底部金屬墊
26‧‧‧囊封劑
28‧‧‧溝槽
30‧‧‧反射材料
34‧‧‧磷光體層
40‧‧‧溝槽
44‧‧‧單體化線
圖1係具有用於互連複數個LED晶粒之金屬墊及跡線之一反射基板之一俯視圖。金屬環經展示包圍相關聯LED陣列。
圖2係沿圖1中之線2-2展示在一單個混合室之區域內之 兩個LED晶粒之一剖面圖。
圖3圖解說明沈積於基板上方之一囊封劑。
圖4圖解說明由一雷射穿透囊封劑形成之溝槽，其中該等溝槽界定每一混合室之反射壁之位置。
圖5圖解說明用一反射材料填充之溝槽。
圖6圖解說明沈積於囊封劑上方(若需要)以產生白色光之一磷光體層。
圖7圖解說明一替代實施例，其中雷射對應於單體化線額外地蝕刻溝槽以使得隨後之鋸割不需要切入有機層。
10‧‧‧反射基板/基板
12‧‧‧發光二極體晶粒
26‧‧‧囊封劑
28‧‧‧溝槽
30‧‧‧反射材料

Claims (20)

  1. 一種製造含有發光二極體(LED)之一混合室之方法，其包括：提供一基板，該基板具有第一複數個混合室區域；將第一複數個LED晶粒安裝於該基板之一頂表面上，每一混合室區域含有至少一個LED晶粒；在該基板及LED晶粒上方形成一覆蓋層；在形成該覆蓋層之該步驟之後，蝕刻穿透該覆蓋層之至少一部分以形成溝槽；用一反射材料至少部分地填充該等溝槽以形成環繞每一混合室之反射壁；及將該基板單體化以分離出個別混合室。
  2. 如請求項1之方法，其中該基板之該頂表面之至少一部分係反射性的。
  3. 如請求項1之方法，其進一步包括在每一混合室區域周圍形成一金屬環。
  4. 如請求項3之方法，其中該蝕刻包括蝕刻該覆蓋層直至曝露該金屬環之至少一部分為止。
  5. 如請求項1之方法，其中該蝕刻步驟包括使用一雷射蝕刻該覆蓋層。
  6. 如請求項1之方法，其中至少部分地填充該等溝槽包括將一反射材料沈積於該等溝槽中。
  7. 如請求項1之方法，其中每一混合室區域包含第二複數個LED晶粒。
  8. 如請求項1之方法，其中該覆蓋層係一囊封層。
  9. 如請求項1之方法，其中該等LED晶粒係裸晶粒。
  10. 如請求項1之方法，其中該基板具有金屬墊，將該等LED晶粒安裝於該基板之該頂部表面上之該步驟包括將該等LED晶粒之電極接合至該等金屬墊。
  11. 如請求項1之方法，其中該等LED晶粒發射藍色光，該方法進一步包括將一磷光體層沈積於該等LED晶粒上方。
  12. 如請求項1之方法，其中該覆蓋層具有一實質上平面表面。
  13. 一種含有發光二極體(LED)之混合室，其包括：一基板，該基板使其頂表面之至少一部分係反射性的；複數個LED晶粒，其安裝於該基板之該頂表面上；一覆蓋層，其位於該基板及LED晶粒上方；溝槽，其形成於該覆蓋層中，該等溝槽對應於該混合室之外部尺寸；及一反射材料，其至少部分地填充該等溝槽，形成環繞該混合室之反射壁。
  14. 如請求項13之室，其中該等LED晶粒發射藍色光，該方法進一步包括沈積上覆該覆蓋層之一波長轉換層。
  15. 如請求項14之室，其中將該波長轉換層經施加為片狀材料、液體材料、部分經固化材料或旋塗材料。
  16. 如請求項13之室，其中該覆蓋層具有一實質上平面頂表面。
  17. 如請求項13之室，其進一步包括形成於該基板上該等溝槽下面之一金屬環。
  18. 如請求項13之室，其中該覆蓋層囊封該等LED晶粒。
  19. 如請求項13之室，其中該等LED晶粒係裸晶粒。
  20. 如請求項13之室，其中該基板具有金屬墊，且其中該等LED晶粒之電極接合至該等金屬墊。
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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101945532B1 (ko) * 2011-08-16 2019-02-07 루미리즈 홀딩 비.브이. 슬롯에 형성된 반사 벽을 갖는 led 혼합 챔버
US10043960B2 (en) * 2011-11-15 2018-08-07 Cree, Inc. Light emitting diode (LED) packages and related methods
CN103311261B (zh) * 2013-05-24 2016-02-17 安徽三安光电有限公司 集成led发光器件及其制作方法
CN103892940B (zh) * 2013-12-02 2016-08-17 北京工业大学 一种充液型笼球式主动脉瓣支架系统
US9954144B2 (en) * 2014-01-10 2018-04-24 Cree, Inc. Wafer level contact pad solder bumping for surface mount devices with non-planar recessed contacting surfaces
CN114188460A (zh) 2015-11-30 2022-03-15 日亚化学工业株式会社 发光装置
US10256218B2 (en) * 2017-07-11 2019-04-09 Samsung Electronics Co., Ltd. Light emitting device package
US11437551B2 (en) * 2019-03-19 2022-09-06 Seoul Viosys Co., Ltd. Light emitting device package and application thereof
US11450648B2 (en) 2019-03-19 2022-09-20 Seoul Viosys Co., Ltd. Light emitting device package and application thereof
US11940662B2 (en) * 2020-10-27 2024-03-26 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for forming the same

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001148517A (ja) * 1994-12-06 2001-05-29 Sharp Corp 発光デバイス
DE10051159C2 (de) 2000-10-16 2002-09-19 Osram Opto Semiconductors Gmbh LED-Modul, z.B. Weißlichtquelle
JP2004071895A (ja) * 2002-08-07 2004-03-04 Sony Corp 導電層形成用の型及びその製造方法
JP2004200531A (ja) * 2002-12-20 2004-07-15 Stanley Electric Co Ltd 面実装型ｌｅｄ素子
TWI246783B (en) * 2003-09-24 2006-01-01 Matsushita Electric Works Ltd Light-emitting device and its manufacturing method
US9368428B2 (en) * 2004-06-30 2016-06-14 Cree, Inc. Dielectric wafer level bonding with conductive feed-throughs for electrical connection and thermal management
KR100638868B1 (ko) * 2005-06-20 2006-10-27 삼성전기주식회사 금속 반사 층을 형성한 엘이디 패키지 및 그 제조 방법
JP4945106B2 (ja) * 2005-09-08 2012-06-06 スタンレー電気株式会社 半導体発光装置
KR100702569B1 (ko) * 2005-09-12 2007-04-02 김광희 반사면 부착형 발광소자
JP5214128B2 (ja) * 2005-11-22 2013-06-19 シャープ株式会社 発光素子及び発光素子を備えたバックライトユニット
TWI285449B (en) * 2006-04-14 2007-08-11 Gigno Technology Co Ltd Light emitting unit
TW200801713A (en) * 2006-06-22 2008-01-01 Radiant Opto Electronics Corp Light emitting diode (LED) back light module and applycation thereof
TWI418054B (zh) * 2006-08-08 2013-12-01 Lg Electronics Inc 發光裝置封裝與製造此封裝之方法
RU2453948C2 (ru) * 2006-10-31 2012-06-20 Конинклейке Филипс Электроникс Н.В. Модуль осветительного устройства (варианты)
JP5013905B2 (ja) * 2007-02-28 2012-08-29 スタンレー電気株式会社 半導体発光装置
US7777412B2 (en) * 2007-03-22 2010-08-17 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Phosphor converted LED with improved uniformity and having lower phosphor requirements
KR20100077213A (ko) * 2007-11-19 2010-07-07 파나소닉 주식회사 반도체 발광장치 및 반도체 발광장치의 제조방법
JP2009176661A (ja) * 2008-01-28 2009-08-06 Nec Lighting Ltd Ｌｅｄ照明装置
TW200947665A (en) * 2008-05-02 2009-11-16 Asda Technology Co Ltd High color rendering light-emitting diodes
JP2011520281A (ja) * 2008-05-07 2011-07-14 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 発光材料を含む自己支持型格子を有するｌｅｄを備えた照明装置及び自己支持型格子を作製する方法
US8415870B2 (en) * 2008-08-28 2013-04-09 Panasonic Corporation Semiconductor light emitting device and backlight source, backlight source system, display device and electronic device using the same
CN102165611B (zh) 2008-09-25 2014-04-23 皇家飞利浦电子股份有限公司 有涂层的发光器件及其涂覆方法
US8033693B2 (en) * 2009-04-30 2011-10-11 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Lighting structure with multiple reflective surfaces
US8097894B2 (en) 2009-07-23 2012-01-17 Koninklijke Philips Electronics N.V. LED with molded reflective sidewall coating
JP5550886B2 (ja) * 2009-11-13 2014-07-16 シチズン電子株式会社 Ｌｅｄ発光装置
JP2011204376A (ja) * 2010-03-24 2011-10-13 Stanley Electric Co Ltd 半導体発光装置
US20110254030A1 (en) * 2010-04-15 2011-10-20 Perkinelmer Elcos Gmbh Liquid reflector
KR101945532B1 (ko) * 2011-08-16 2019-02-07 루미리즈 홀딩 비.브이. 슬롯에 형성된 반사 벽을 갖는 led 혼합 챔버

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