TW201314793A - 使用氧化物半導體之薄膜電晶體的製造方法及製造裝置 - Google Patents
使用氧化物半導體之薄膜電晶體的製造方法及製造裝置 Download PDFInfo
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- TW201314793A TW201314793A TW101129952A TW101129952A TW201314793A TW 201314793 A TW201314793 A TW 201314793A TW 101129952 A TW101129952 A TW 101129952A TW 101129952 A TW101129952 A TW 101129952A TW 201314793 A TW201314793 A TW 201314793A
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- Prior art keywords
- light
- oxide
- lamp
- tube
- film transistor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 88
- 239000010409 thin film Substances 0.000 title claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 title claims description 60
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 112
- 239000001301 oxygen Substances 0.000 claims abstract description 111
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 110
- 239000007789 gas Substances 0.000 claims abstract description 88
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000001257 hydrogen Substances 0.000 claims abstract description 37
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 37
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 21
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 21
- 239000005300 metallic glass Substances 0.000 claims abstract description 20
- 230000001678 irradiating effect Effects 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 227
- 239000000758 substrate Substances 0.000 claims description 58
- 238000010438 heat treatment Methods 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- 230000003213 activating effect Effects 0.000 claims description 5
- 230000001706 oxygenating effect Effects 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 34
- 230000001737 promoting effect Effects 0.000 abstract 1
- 229910052724 xenon Inorganic materials 0.000 description 56
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 56
- 238000000295 emission spectrum Methods 0.000 description 40
- 239000010410 layer Substances 0.000 description 37
- 230000003595 spectral effect Effects 0.000 description 32
- 229910052594 sapphire Inorganic materials 0.000 description 25
- 239000010980 sapphire Substances 0.000 description 25
- 239000001307 helium Substances 0.000 description 22
- 229910052734 helium Inorganic materials 0.000 description 22
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 22
- 238000005286 illumination Methods 0.000 description 22
- 230000005855 radiation Effects 0.000 description 22
- 239000011521 glass Substances 0.000 description 20
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 description 15
- 238000000137 annealing Methods 0.000 description 15
- 238000002474 experimental method Methods 0.000 description 14
- 239000004973 liquid crystal related substance Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- 230000007547 defect Effects 0.000 description 11
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000004913 activation Effects 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 230000009471 action Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 229910052712 strontium Inorganic materials 0.000 description 5
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 230000008439 repair process Effects 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910007541 Zn O Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- -1 oxygen radical Chemical class 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910007604 Zn—Sn—O Inorganic materials 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- KWMKCPAIFULUBU-UHFFFAOYSA-N phosphoric acid yttrium Chemical compound [Y].P(O)(O)(O)=O KWMKCPAIFULUBU-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011214414A JP5418563B2 (ja) | 2011-09-29 | 2011-09-29 | 酸化物半導体を用いた薄膜トランジスタの製造方法および製造装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201314793A true TW201314793A (zh) | 2013-04-01 |
Family
ID=48022312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101129952A TW201314793A (zh) | 2011-09-29 | 2012-08-17 | 使用氧化物半導體之薄膜電晶體的製造方法及製造裝置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5418563B2 (ja) |
| KR (1) | KR20130035217A (ja) |
| CN (1) | CN103035531A (ja) |
| TW (1) | TW201314793A (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101796626B1 (ko) * | 2014-05-29 | 2017-11-13 | 에이피시스템 주식회사 | 기판 열처리 장치 |
| JP6472247B2 (ja) * | 2015-01-07 | 2019-02-20 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理方法および熱処理装置 |
| JP6527733B2 (ja) * | 2015-03-25 | 2019-06-05 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理装置 |
| KR101818721B1 (ko) * | 2015-03-27 | 2018-02-21 | 에이피시스템 주식회사 | 반도체 소자 제조 장치 및 이를 이용한 반도체 소자 제조 방법 |
| JP6654716B2 (ja) * | 2019-01-21 | 2020-02-26 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理方法およびゲート形成方法 |
| JP7192588B2 (ja) * | 2019-03-12 | 2022-12-20 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5282409B2 (ja) * | 2008-02-25 | 2013-09-04 | ウシオ電機株式会社 | 光照射式加熱方法及び光照射式加熱装置 |
| JP2010123758A (ja) * | 2008-11-19 | 2010-06-03 | Nec Corp | 薄膜デバイス及びその製造方法 |
| JP5763876B2 (ja) * | 2009-05-08 | 2015-08-12 | コニカミノルタ株式会社 | 薄膜トランジスタ、及びその製造方法 |
| CN104835850B (zh) * | 2009-07-10 | 2018-10-26 | 株式会社半导体能源研究所 | 半导体器件 |
-
2011
- 2011-09-29 JP JP2011214414A patent/JP5418563B2/ja not_active Expired - Fee Related
-
2012
- 2012-08-17 TW TW101129952A patent/TW201314793A/zh unknown
- 2012-09-27 KR KR1020120107995A patent/KR20130035217A/ko not_active Application Discontinuation
- 2012-09-28 CN CN2012103694848A patent/CN103035531A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN103035531A (zh) | 2013-04-10 |
| JP2013074255A (ja) | 2013-04-22 |
| JP5418563B2 (ja) | 2014-02-19 |
| KR20130035217A (ko) | 2013-04-08 |
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