TW201313943A - 成膜裝置 - Google Patents

成膜裝置 Download PDF

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Publication number
TW201313943A
TW201313943A TW101116516A TW101116516A TW201313943A TW 201313943 A TW201313943 A TW 201313943A TW 101116516 A TW101116516 A TW 101116516A TW 101116516 A TW101116516 A TW 101116516A TW 201313943 A TW201313943 A TW 201313943A
Authority
TW
Taiwan
Prior art keywords
gas
processing
processing space
substrate
film forming
Prior art date
Application number
TW101116516A
Other languages
English (en)
Chinese (zh)
Inventor
Manabu Amikura
Tetsuya Saitou
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201313943A publication Critical patent/TW201313943A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW101116516A 2011-05-10 2012-05-09 成膜裝置 TW201313943A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011105381A JP2012237026A (ja) 2011-05-10 2011-05-10 成膜装置

Publications (1)

Publication Number Publication Date
TW201313943A true TW201313943A (zh) 2013-04-01

Family

ID=47139077

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101116516A TW201313943A (zh) 2011-05-10 2012-05-09 成膜裝置

Country Status (3)

Country Link
JP (1) JP2012237026A (ja)
TW (1) TW201313943A (ja)
WO (1) WO2012153591A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6107327B2 (ja) * 2013-03-29 2017-04-05 東京エレクトロン株式会社 成膜装置及びガス供給装置並びに成膜方法
CN104250725B (zh) * 2013-06-26 2016-11-23 北京北方微电子基地设备工艺研究中心有限责任公司 预沉积工艺、扩散工艺及扩散设备
JP6516436B2 (ja) 2014-10-24 2019-05-22 東京エレクトロン株式会社 成膜装置及び成膜方法
JP6438751B2 (ja) * 2014-12-01 2018-12-19 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
WO2017017821A1 (ja) 2015-07-29 2017-02-02 堺ディスプレイプロダクト株式会社 支持ピン及び成膜装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63140619U (ja) * 1987-03-06 1988-09-16
KR100868953B1 (ko) * 2004-10-15 2008-11-17 가부시키가이샤 히다치 고쿠사이 덴키 기판처리장치 및 반도체장치의 제조방법
KR100960958B1 (ko) * 2007-12-24 2010-06-03 주식회사 케이씨텍 박막 증착 장치 및 증착 방법
US8298338B2 (en) * 2007-12-26 2012-10-30 Samsung Electronics Co., Ltd. Chemical vapor deposition apparatus
JP5107185B2 (ja) * 2008-09-04 2012-12-26 東京エレクトロン株式会社 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体

Also Published As

Publication number Publication date
WO2012153591A1 (ja) 2012-11-15
JP2012237026A (ja) 2012-12-06

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