TW201308458A - 導線接合裝置及半導體裝置之製造方法 - Google Patents

導線接合裝置及半導體裝置之製造方法 Download PDF

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TW201308458A
TW201308458A TW101105359A TW101105359A TW201308458A TW 201308458 A TW201308458 A TW 201308458A TW 101105359 A TW101105359 A TW 101105359A TW 101105359 A TW101105359 A TW 101105359A TW 201308458 A TW201308458 A TW 201308458A
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wire
pad
bonding
pin
holder
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TW101105359A
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Yuichi Sano
Naoto Takebe
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Toshiba Kk
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Abstract

本發明之目的在於提供一種導線接合裝置及半導體裝置之製造方法，其在執行導線接合時降低環線高度。本實施形態之導線接合裝置包含：焊針；接合載台；移動機構，其係使上述焊針對上述接合載台相對移動；及控制部，其係控制上述移動機構。上述控制部係藉由上述焊針，使插通焊針之導線於第1焊墊上進行第一次接合，且藉由上述焊針，使上述導線接觸設置有第2焊墊之基板之上表面中鄰近上述第2焊墊之部位並被按壓變形，從而形成接合用之連接部。而上述控制部係以將上述導線之連接部接合於上述第2焊墊之方式，控制上述移動機構。

Description

導線接合裝置及半導體裝置之製造方法
本發明之實施形態係關於導線接合裝置及半導體裝置之製造方法。
本申請案係享受以日本專利申請第2011-173845號(申請日：2011年8月9日)作為基礎申請案之優先權。本申請案係參照該基礎申請案並涵蓋其全部內容。
於電路基板上接著半導體晶片，且將設置於半導體晶片上表面之電極焊墊、與設置於電路基板上表面之接合焊墊藉由導線接合裝置連接之構成係眾所周知。該構成之情形，於自焊針向下方突出之導線之前端形成球體，藉由使該球體抵接於半導體晶片之電極焊墊上而接合(第一接合)。繼而，一邊自焊針送出導線一邊使焊針上升，進而使其橫向移動至位於電路基板之接合焊墊正上方後，再使焊針下降，使導線抵接於接合焊墊上，且相對該導線利用經由焊針施加之載荷與超音波，及經由設置於電路基板側之加熱器施加之熱量以進行接合(第二接合)。
上述構成之情形，接合於半導體晶片之電極焊墊及電路基板之接合焊墊之導線之環線部分的形狀係大致成山形。該導線之環線部分之高度，即，將半導體晶片之電極焊墊之上表面至上述環線部分之最高部分之高度定義為環線高度。近年來，需求使上述環線高度降低。
然而，執行上述導線接合之情形，在進行第二接合，使 導線抵接於電路基板之接合焊墊上欲接合時，由於若干導線自焊針下垂，故在抵接電路基板之接合焊墊前，上述下垂之導線先接觸電路基板之表面。由於藉由該接觸產生之應力致使導線上彈，從而造成上述環線高度變高之異常。例如，在環線高度設定為40~50 μm之情形下，藉由上述導線之上彈，致使環線高度變高10%。
因此，本發明提供一種在執行導線接合時，可降低環線高度之導線接合裝置及半導體裝置之製造方法。
本實施形態之導線接合裝置，其特徵為包含：焊針；接合載台；移動機構，其係使上述焊針對上述接合載台相對移動；及控制部，其係控制上述移動機構。上述控制部係藉由上述焊針，使插通焊針之導線於第1焊墊上進行第一次接合，且藉由利用上述焊針，使上述導線接觸設置有第2焊墊之基板之上表面中鄰近上述第2焊墊之部位並被按壓變形，從而形成接合用之連接部。而上述控制部係以將上述導線之連接部接合於上述第2焊墊之方式，控制上述移動機構。
本實施形態之半導體裝置之製造方法，其特徵為藉由上述焊針，使插通焊針之導線在設置於電路基板之半導體晶片之電極焊墊上進行第一次接合。接著，藉由上述焊針，使上述導線接觸設置有接合焊墊之上述電路基板上表面中 鄰近上述接合焊墊之部位並被按壓變形，從而形成接合用之連接部。進而將上述導線之連接部接合於上述接合焊墊。
以下針對複數個實施形態，參照圖式加以說明。另，各實施形態中，對實質性相同之構成部位附以相同符號並省略說明。惟圖式為模式化者，其中厚度與平面尺寸之關係、各層厚度之比例等與實物不同。
(第1實施形態)
關於本實施形態之導線接合裝置，參照圖1至圖10加以說明。
首先，關於導線接合裝置之構成，參照圖10加以說明。導線接合裝置21具備：焊針7，其係可插通導線8；接合頭22，其係保持焊針7；超音波焊頭23，其係經由接合頭22使焊針7超音波振動；機械臂驅動馬達24，其係經由接合機械臂22a使接合頭22旋轉，而使焊針7於垂直方向(Z軸方向)移動；接合載台25，其係載置接合對象之電路基板1；XY移動機構26，其係使接合頭22於水平方向(XY軸方向)移動；及控制部27，其係統括性控制導線接合裝置21。
超音波焊頭23具有振動件23a，其係產生超音波振動。接合載台25具有：加熱器(未圖示)，其係加熱電路基板1，且用以將電路基板1之溫度設定為所需之溫度。XY移動機構26具有：X軸線性馬達26a，其係使接合頭22於X軸方向移動；及Y軸線性馬達26b，其係使接合頭22於Y軸方向移 動。該情形下，接合機械臂22a(機械臂驅動馬達24)及XY移動機構26係構成移動機構。
控制部27係控制超音波焊頭23、機械臂驅動馬達24、XY移動機構26、及接合載台25之加熱器以進行導線接合者。控制部27中設置有：輸入部28，其係接收由作業人員輸入之各種控制資訊；輸出部29，其係顯示控制部27之各種控制資訊；記憶體30，其儲存有各種程式；及CPU31，其係進行接合控制。CPU31係執行自記憶體30讀取之程式，經由超音波焊頭I/F32、機械臂驅動馬達I/F33、X軸線性馬達I/F34、Y軸線性馬達I/F35、及加熱器I/F36，控制超音波焊頭23、機械臂驅動馬達24、X軸線性馬達26a、Y軸線性馬達26b、及接合載台25之加熱器之各動作。下述接合方法係藉由控制包含藉由程式控制之焊針7之接合裝置1的加工點來實現。
接著如圖1所示，半導體晶片2介隔半導體晶片安裝用接著劑3，接著於電路基板1之上表面，且設置有接合焊墊(第二焊墊)4。於半導體晶片2之上表面設置有電極焊墊(第一焊墊)5。於半導體晶片2之上表面設置有保護絕緣膜15。保護絕緣膜15係使用例如聚醯亞胺。在保護絕緣膜15上，以露出電極焊墊5之方式設置有開口部。電極焊墊5係例如使用Al與Cu之合金、或Al與Si、Cu之合金。電極焊墊5之上表面之高度係以比保護絕緣膜15之上表面之高度低之方式構成。
又，電路基板1係例如使用環氧玻璃基板。除電路基板1 之上表面中接合焊墊4以外之部分係以光阻膜6覆蓋。接合焊墊4係例如使用Cu，且其表面上例如形成有Au薄膜。又，接合焊墊4之上表面之高度係以比光阻膜6之上表面之高度更低之方式構成。
焊針7中例如插通有包含金線等之導線8。於焊針7之上方，設置有夾持器(未圖示)，其切換可自由送出導線8之狀態(開啟狀態)與阻止送出導線8之狀態(關閉狀態)。夾持器之開閉動作係藉由上述控制部27控制而構成。焊針7係受上述接合頭22支持，且如上所述，設置為可上下方向(Z軸方向)移動，且設置為可水平方向(XY軸方向)移動。
又，導線接合裝置21係具備：火花放電產生裝置(未圖示)，其係產生火花放電，用以於自焊針7之下端部向下方突出之導線8之前端部，形成接合用球體9。火花放電產生裝置係藉由上述控制部27驅動控制而構成。
其次，對藉由上述構成之導線接合裝置21，將半導體晶片2上表面之電極焊墊5、與電路基板1上表面之接合焊墊4導線接合連接之方法(步驟)加以說明。
首先如圖1所示，於半導體晶片2之電極焊墊5上，以眾所周知之方法進行導線8之第一次接合(第一次接合)。該情形下，例如以關閉夾持器之狀態，於自焊針7之下端部延伸之導線8之前端部，藉由火花放電形成球體9，繼而以開啟夾持器之狀態，使焊針7移動至電極焊墊5上方後，再使其下降，將上述球體9接合於電極焊墊5上。在進行該接合時，經由電路基板1加熱。
此後，如圖1所示，在開啟夾持器之狀態下使焊針7上升後，令電路基板1上表面中鄰近接合焊墊4之部分之焊針7移動至暫時接觸並按壓之暫接觸部分10之上方(正上方)。繼而如圖2及圖3所示，在開啟夾持器之狀態下，使焊針7下降，令導線8接觸按壓於上述暫接觸部分10上(抵接)。在該接觸時，經由焊針7施加按壓力，且經由電路基板1施加熱量。藉此，如圖4所示，藉由焊針7之下端部之焊針接觸面7a對導線8加壓使其變形以形成連接部11。該情形下，藉由將導線8夾於焊針7之焊針接觸面7a與電路基板1(光阻膜6)之上表面之間，並按壓變形，從而形成連接部11。
其次，如圖5所示，在開啟夾持器之狀態下使焊針7上升後，又如圖6所示，在開啟夾持器之狀態下令焊針7水平移動至接合焊墊4之上方(正上方)。繼而，如圖7所示，在開啟夾持器之狀態下，使焊針7下降，且抵接按壓於上述接合焊墊4上。在該抵接時，夾持器為開啟之狀態，且經由焊針7施加按壓力及超音波，經由電路基板1施加熱量。藉此，如圖8所示，藉由焊針7之下端部之焊針接觸面7a，使導線8之連接部11接合於接合焊墊4上，即進行第二次接合(第二次接合)。其後，若在關閉夾持器之狀態下使焊針7上升，則如圖9所示，導線8在接合於接合焊墊4之連接部11之部分(薄壁部分)被切斷。
根據上述構成之本實施形態，在導線接合於電路基板1之接合焊墊4上之前，藉由焊針7使導線8接觸於電路基板1之暫接觸部分10上並按壓變形，從而形成導線8之連接部 11。該情形下，在形成上述連接部11時，如圖1及圖2所示，由於若干導線8自焊針7下垂，故在接觸電路基板1之暫接觸部分10上之前，上述下垂之導線8先接觸於電路基板1之表面。由於藉由該接觸產生之應力致使導線8上彈，從而造成導線8之環線高度h變高(參照圖3)。
其後，為使導線接合於電路基板1之接合焊墊4上，如圖5、圖6、圖7所示，使焊針7上升，且移動至接合焊墊4之上方(正上方)，進而使焊針7下降，使導線8之連接部11抵接於上述接合焊墊4上並被按壓，從而將連接部11接合於接合焊墊4。該情形，在導線8之連接部11抵接於焊針7之焊針接觸面7a之狀態下，由於焊針7以如上所述之方式移動，故導線8被牽引，使得導線8之環線高度h降低。
再者，將導線8之連接部接合於接合焊墊4時，在導線8之連接部11抵接於焊針7之焊針接觸面7a之狀態下，由於導線8未從焊針7之下端部下垂，故導線8不會接觸電路基板1之表面。因此，由於難以產生應力，且導線8之上彈變少，故可使導線8之環線高度h保持在較低狀態(參照圖7)。例如，將導線8之環線高度設定為40~50 μm之情形，因導線8之上彈變少，故可將環線高度可大致正確設定為上述40~50 μm。
又，上述實施形態之情形，藉由焊針7使導線8暫時接觸於電路基板1之上表面之位置，即如圖1至圖3所示，暫接觸部分10之位置雖為鄰近接合焊墊4之部位之半導體晶片2之電極焊墊5側(圖3中左側)之部位，但並不限定於該部 位。
例如，在顯示變形實施形態之圖11中，只要將上述暫接觸部分10配置於比電路基板1之接合焊墊4之右端更右側(即，半導體晶片2之電極焊墊5側)之區域，具體而言係比圖11中虛線P更為右側之區域即可。將上述暫接觸部分10配置於比上述虛線P更右側之區域(箭頭所示範圍之區域)中鄰近接合焊墊4之部位尤佳。
(其他實施形態)
除上述說明之複數個實施形態以外，亦可採用如下構成。
上述實施形態中，藉由焊針7使導線8接觸於電路基板1之暫接觸部分10上並被按壓變形，且在形成導線8之連接部11後，仍保持開啟夾持器之狀態使焊針7上升、移動及下降、按壓，但亦可取代之，在形成導線8之連接部11後，關閉夾持器，且在關閉夾持器之狀態下，使焊針7上升、移動及下降、按壓。若以如此構成，則由於在焊針7移動時導線8變得無法送出，故導線8之環線高度h可更確實降低。
又，上述實施形態中，導線8第二次接合於電路基板1之接合焊墊4上時，在該接合前令焊針7下降，並使導線8接觸並按壓於電路基板1之暫接觸部分10上。取代之，亦可在導線8第二次接合於半導體晶片2之電極焊墊5上時，執行上述導線8之暫接觸。具體而言，在導線8第一次接合於電路基板1之接合焊墊4上之後，且第二次接合於半導體晶 片2之電極焊墊5上之前，藉由焊針7使導線8接觸(抵接)於半導體晶片2之上表面之保護絕緣膜15上鄰近電極焊墊5之部分之暫接觸部分上，並按壓變形。藉此，藉由焊針7之焊針接觸面7a對導線8加壓使其變形，從而形成連接部。此後，將該導線8之連接部接合於半導體晶片2之電極焊墊5上。若根據該構成，由於不產生導線8因為應力之上彈，故可設定穩定且較低之環線高度。
又，在導線8第二次接合於半導體晶片2之電極焊墊5上時，除導線8直接第二次接合於電極焊墊5上以外，如顯示變形實施形態之圖12所示，亦可介隔設置於電極焊墊5上之凸塊37以進行第二次接合。
雖對本發明之數個實施形態加以說明，但該等實施形態僅係作為實例而提出，並非意欲限定本發明之範圍。該等新實施形態係可以多種其他形態體現，在不脫離本發明主旨之範圍內，可作出各種省略、替代、及變更。該等實施形態及其變形係涵蓋於本發明之範圍及主旨，且涵蓋於記述在專利申請範圍內之本發明與其均等之範圍內。
1‧‧‧電路基板
2‧‧‧半導體晶片
3‧‧‧半導體晶片安裝用接著劑
4‧‧‧接合焊墊
5‧‧‧電極焊墊
6‧‧‧光阻膜
7‧‧‧焊針
7a‧‧‧焊針接觸面
8‧‧‧導線
9‧‧‧球體
10‧‧‧暫接觸部分
11‧‧‧連接部
15‧‧‧保護絕緣膜
21‧‧‧導線接合裝置
22‧‧‧接合頭
22a‧‧‧接合機械臂
23‧‧‧超音波焊頭
23a‧‧‧振動件
24‧‧‧機械臂驅動馬達
25‧‧‧接合載台
26‧‧‧XY移動機構
26a‧‧‧X軸線性馬達
26b‧‧‧Y軸線性馬達
27‧‧‧控制部
28‧‧‧輸入部
29‧‧‧輸出部
30‧‧‧記憶體
31‧‧‧CPU
32‧‧‧超音波焊頭I/F
33‧‧‧機械臂驅動馬達I/F
34‧‧‧X軸線性馬達I/F
35‧‧‧Y軸線性馬達I/F
36‧‧‧加熱器I/F
h‧‧‧環線高度
圖1係對顯示第1實施形態之導線接合方法加以說明之縱剖側視圖(其一)。
圖2係對導線接合方法加以說明之縱剖側視圖(其二)。
圖3係對導線接合方法加以說明之縱剖側視圖(其三)。
圖4係顯示導線接觸於電路基板上之狀態之擴大縱剖側視圖。
圖5係對導線接合方法加以說明之縱剖側視圖(其四)。
圖6係對導線接合方法加以說明之縱剖側視圖(其五)。
圖7係對導線接合方法加以說明之縱剖側視圖(其六)。
圖8係顯示導線接合於接合焊墊上之狀態之擴大縱剖側視圖。
圖9係對導線接合方法加以說明之縱剖側視圖(其七)。
圖10係顯示導線接合裝置之概略構成圖。
圖11係顯示變形實施形態之接合焊墊周圍之俯視圖。
圖12係由於顯示不同之變形實施形態，故對導線接合方法加以說明之縱剖側視圖。
1‧‧‧電路基板
2‧‧‧半導體晶片
3‧‧‧半導體晶片安裝用接著劑
4‧‧‧接合焊墊
5‧‧‧電極焊墊
6‧‧‧光阻膜
7‧‧‧焊針
8‧‧‧導線
10‧‧‧暫接觸部分
11‧‧‧連接部
15‧‧‧保護絕緣膜
h‧‧‧環線高度

Claims (7)

  1. 一種導線接合裝置，其特徵為包含：焊針；接合頭，其係保持焊針；接合載台；移動機構，其係使上述焊針對上述接合載台相對移動；超音波焊頭，其係使焊針超音波振動；夾持器，其係設置為可開閉，在開啟狀態下可將插通上述焊針之導線送出，在關閉狀態下不可將上述導線送出；及控制部，其係控制上述移動機構、上述超音波焊頭及上述夾持器；上述控制部係藉由上述焊針，使插通上述焊針之導線於第1焊墊上進行第一次接合；藉由上述焊針，使上述導線接觸設置有第2焊墊之基板之上表面中鄰近上述第2焊墊之部位並被按壓變形，從而形成接合用之連接部；以將上述導線之連接部接合於上述第2焊墊之方式，控制上述移動機構；且上述控制部係以如下方式控制上述移動機構：在形成上述導線之連接部時，將上述導線夾於上述焊針之下端部之焊針接觸面與上述基板之上表面之間並使其按壓變形；更且以如下方式控制上述移動機構與上述夾持器：在開啟上述夾持器之狀態下形成上述接合用連接部，其後在關閉上述夾持器之狀態下，使上述焊針上升，使其移動至上述第2焊墊之上方，然後使焊針下降，使上述導線之連接部抵接於上述第2焊墊，而將上述導線之連接部接 合於上述第2焊墊。
  2. 一種導線接合裝置，其特徵為包含：焊針；接合載台；移動機構，其係使上述焊針對上述接合載台相對移動；及控制部，其係控制上述移動機構；且上述控制部係藉由上述焊針，使插通焊針之導線於第1焊墊上進行第一次接合；藉由上述焊針，使上述導線接觸設置有第2焊墊之基板之上表面中鄰近上述第2焊墊之部位並被按壓變形，從而形成接合用之連接部；以將上述導線之連接部接合於上述第2焊墊之方式，控制上述移動機構。
  3. 如請求項2之導線接合裝置，其中上述控制部在形成上述導線之連接部時，以將上述導線夾於上述焊針之下端部之焊針接觸面與上述基板之上表面之間並使其按壓變形之方式，控制上述移動機構。
  4. 如請求項2或3之導線接合裝置，其中具備：夾持器，其係設置為可開閉，在開啟狀態下可將插通上述焊針之上述導線送出，在關閉狀態下不可將上述導線送出；且上述控制部係以如下方式控制上述移動機構與上述夾持器：在開啟上述夾持器之狀態下形成上述接合用連接部，其後保持上述夾持器之開啟狀態，使上述焊針上升，使其移動至上述第2焊墊之上方，然後使焊針下降，使上述導線之連接部抵接於上述第2焊墊，而在將 上述導線之連接部接合於上述第2焊墊後，關閉上述夾持器狀態。
  5. 如請求項2或3之導線接合裝置，其中具備：夾持器，其係設置為可開閉，在開啟狀態下可將插通上述焊針之上述導線送出，在關閉狀態下不可將上述導線送出；且上述控制部係以如下方式控制上述移動機構與上述夾持器：在開啟上述夾持器之狀態下形成上述接合用連接部，其後在關閉上述夾持器之狀態下，使上述焊針上升，使其移動至上述第2焊墊之上方，然後使焊針下降，使上述導線之連接部抵接於上述第2焊墊，而將上述導線之連接部接合於上述第2焊墊。
  6. 一種導線接合裝置，其特徵為包含：焊針；接合載台；移動機構，其係使上述焊針對上述接合載台相對移動；及控制部，其係控制上述移動機構；且上述控制部係藉由上述焊針，使插通焊針之導線於第1焊墊上進行第一次接合；藉由上述焊針，使上述導線接觸設置有第2焊墊之半導體晶片之上表面中鄰近上述第2焊墊之部位並被按壓變形，從而形成接合用之連接部；以將上述導線之連接部接合於上述第2焊墊或設置於上述第2焊墊上之凸塊之方式，控制上述移動機構。
  7. 一種半導體裝置之製造方法，其特徵為藉由上述焊針，使插通焊針之導線在設置於電路基板之半導體晶片之電 極焊墊上進行第一次接合，藉由上述焊針，使上述導線接觸設置有接合焊墊之上述電路基板之上表面中鄰近上述接合焊墊之部位並被按壓變形，從而形成接合用之連接部，且將上述導線之連接部接合於上述接合焊墊。
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