CN106233443B - 凸块形成方法、凸块形成装置以及半导体装置的制造方法 - Google Patents

凸块形成方法、凸块形成装置以及半导体装置的制造方法 Download PDF

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CN106233443B
CN106233443B CN201480078105.7A CN201480078105A CN106233443B CN 106233443 B CN106233443 B CN 106233443B CN 201480078105 A CN201480078105 A CN 201480078105A CN 106233443 B CN106233443 B CN 106233443B
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metal wire
bonding tool
convex block
datum level
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CN106233443A (zh
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吉野浩章
富山俊彦
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Arakawa Co Ltd
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Arakawa Co Ltd
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Abstract

本发明是关于一种凸块形成方法、凸块形成装置以及半导体装置的制造方法。本发明形成半导体装置用的凸块的方法包括:接合步骤,将自接合工具的前端伸出的金属线的前端接合于第1地点(X1);金属线抽出步骤,使接合工具向远离第1地点(X1)的方向移动;薄壁部形成步骤,在基准面的第2地点(X2)利用接合工具按压金属线的一部分,而在金属线形成薄壁部(64);金属线整形步骤,将接合于第1地点(X1)的金属线以自基准面竖立的方式进行整形;及凸块形成步骤,将金属线自薄壁部切断,而在第1地点(X1)形成具有自基准面竖立的形状的凸块(60)。由此,可更简便且有效率地形成具有所需高度的凸块。

Description

凸块形成方法、凸块形成装置以及半导体装置的制造方法
技术领域
本发明涉及一种凸块(bump)形成方法、凸块形成装置以及半导体装置的制造方法。
背景技术
作为半导体装置用的凸块形成方法,已知有应用打线(wire bonding)方法的凸块形成方法。例如,已知有如下方法:在半导体芯片(die)的电极上接合形成于金属线的前端的压接球,并在所述压接球上形成包含金属线的一定高度的颈部,由此形成凸块(参照专利文献1)。此种凸块有时被称为柱形凸块(stud bump)(注册商标)。
现有技术文献
专利文献
专利文献1:日本专利第4509043号公报
发明内容
[发明所要解决的问题]
然而,所述专利文献1的发明中,在凸块的高度成为一定以上的情况下,存在难以使金属线的颈部直立,并且难以通过接合工具(bonding tool)的操作来切断金属线的情况。另外,作为其他现有技术,已知有堆积多个凸块而成的堆叠凸块(stacked bump)的形成方法,但所述方法存在如下问题,即,使各凸块堆叠本身繁杂且需要花费时间,或者凸块的位置产生偏移或无法获得所需的凸块强度。
另一方面,近来,直通硅晶通孔(Through Silicon Via,TSV)或叠合式封装(Package On Package,POP)等三维封装实施方式正成为主流,此种封装实施方式要求以在某种程度上受到限制的窄间距间隔形成具有一定以上的高度的凸块,且对于更简便且有效率地形成此种凸块的需求不断提高。
因此,本发明的目的在于提供一种能够解决所述问题的凸块形成方法、凸块形成装置以及半导体装置的制造方法。
[解决问题的技术手段]
本发明的一实施方式的凸块形成方法是包括:接合步骤,使接合工具朝向基准面的第1地点下降,而将自接合工具的前端伸出的金属线的前端接合于第1地点;金属线抽出步骤,一面自接合工具的前端抽出金属线一面使接合工具沿着相对于基准面垂直的方向移动至第1高度,其后,使接合工具朝向基准面的第2地点移动;薄壁部形成步骤,通过在基准面的第2地点利用接合工具按压金属线的一部分,而在金属线形成薄壁部;金属线整形步骤,使接合工具与金属线的薄壁部一并朝向基准面的第3地点的上方移动至较第1高度高的第2高度,而将接合于第1地点的金属线以自基准面竖立的方式进行整形;及凸块形成步骤,通过将金属线在薄壁部切断,而在第1地点形成具有自基准面竖立的形状的凸块;第3地点是连结第2地点与第1地点的直线上的地点,且是具有如下关系的地点,即,在第3地点与第2地点之间配置第1地点。
根据所述构成,通过接合工具在金属线形成薄壁部,并将接合于第1地点的金属线以自基准面竖立的方式进行整形后,将金属线在薄壁部切断,由此在第1地点形成具有自基准面竖立的形状的凸块。因此,可更简便且有效率地形成具有所需高度的凸块。
在所述凸块形成方法中,也可在金属线抽出步骤中,一面使接合工具维持第1高度一面沿着平行方向朝向第2地点移动,其后,沿着相对于基准面垂直的方向朝向第2地点移动。
在所述凸块形成方法中,也可在金属线抽出步骤中,使接合工具自第1高度朝向第2地点以描绘规定的曲线的方式移动。
本发明的一实施方式的凸块形成方法是包括:接合步骤,使接合工具朝向基准面的第1地点下降,而将自接合工具的前端伸出的金属线的前端接合于第1地点;金属线抽出步骤,一面自接合工具的前端抽出金属线一面使接合工具朝向第2地点的上方以描绘规定的曲线的方式移动第1高度,其后,沿着相对于基准面垂直的方向朝向第2地点移动;薄壁部形成步骤,通过在基准面的第2地点利用接合工具按压金属线的一部分,而在金属线形成薄壁部;金属线整形步骤,使接合工具与金属线的薄壁部一并朝向基准面的第3地点的上方移动至较第1高度高的第2高度,而将接合于第1地点的金属线以自基准面竖立的方式进行整形;及凸块形成步骤,通过将金属线在薄壁部切断,而在第1地点形成具有自基准面竖立的形状的凸块;第3地点是连结第2地点与第1地点的直线上的地点,且是具有如下关系的地点,即,在第3地点与第2地点之间配置第1地点。
在所述凸块形成方法中,也可在金属线整形步骤中,使接合工具沿着相对于基准面垂直的方向移动至第2高度,其后,一面维持第2高度一面沿着平行方向朝向第3地点移动。
在所述凸块形成方法中,也可在金属线整形步骤中,使接合工具朝向第3地点的上方以描绘规定的曲线的方式移动至第2高度。
在所述凸块形成方法中,也可在金属线整形步骤后且金属线切断步骤前,还包括一面自接合工具的前端抽出金属线一面使接合工具上升的步骤。
在所述凸块形成方法中,也可在凸块形成步骤中,通过在利用线夹(wireclamper)拘束金属线的状态下,使接合工具进一步上升,而将金属线在薄壁部切断。
在所述凸块形成方法中,也可在接合步骤前,还包括使金属线的前端成为球状的步骤。
在所述凸块形成方法中,也可在薄壁部形成步骤中,以金属线的薄壁部的厚度成为金属线的直径的大致一半的方式按压金属线。
本发明的一实施方式的半导体装置的制造方法包括所述凸块形成方法。
本发明的一实施方式的凸块形成装置是使用插通有金属线的接合工具而形成半导体装置用的凸块的凸块形成装置,且所述凸块形成装置包括控制接合工具的动作的控制部,且控制部构成为执行如下步骤:接合步骤,使接合工具朝向基准面的第1地点下降,而将自接合工具的前端伸出的金属线的前端接合于第1地点;金属线抽出步骤,一面自接合工具的前端抽出金属线一面使接合工具向远离第1地点的方向移动至第1高度,其后,使接合工具朝向基准面的第2地点移动;薄壁部形成步骤,通过在基准面的第2地点利用接合工具按压金属线的一部分,而在金属线形成薄壁部;金属线整形步骤,使接合工具与金属线的薄壁部一并朝向基准面的第3地点的上方移动至较第1高度高的第2高度,而将接合于第1地点的金属线以自基准面竖立的方式进行整形;及凸块形成步骤,通过将金属线在薄壁部切断,而在第1地点形成具有自基准面竖立的形状的凸块;第3地点是连结第2地点与第1地点的直线上的地点,且是具有如下关系的地点,即,在第3地点与第2地点之间配置第1地点。
根据所述构成,通过接合工具在金属线形成薄壁部,并将接合于第1地点的金属线以自基准面竖立的方式进行整形后,将金属线在薄壁部切断,由此在第1地点形成具有自基准面竖立的形状的凸块。因此,可更简便且有效率地形成具有所需高度的凸块。
[发明的效果]
根据本发明,可更简便且有效率地形成具有所需高度的凸块。
附图说明
图1是本实施方式的凸块形成装置的构成图。
图2(A)~图2(E)是表示本实施方式的凸块形成方法的图。
图3(A)~图3(C)是表示本实施方式的凸块形成方法的图。
图4是用以说明本实施方式的凸块形成方法的时序图。
图5(A)及图5(B)是表示通过本实施方式的凸块形成方法而形成的多个凸块的图(照片)。
图6是表示具备通过本实施方式的凸块形成方法而形成的凸块的半导体装置的一例的图。
图7是用以说明本实施方式的变形例的凸块形成方法的时序图。
图8是用以说明本实施方式的变形例的凸块形成方法的时序图。
图9是用以说明本实施方式的变形例的凸块形成方法的时序图。
图10是用以说明本实施方式的变形例的凸块形成方法的时序图。
[符号的说明]
1:凸块形成装置
10:控制部
11:基台
12:XY平台
13:接合头
14:炬电极
15:接合工具(毛细管)
15a:前端
16:超声波焊头
17:线夹
18:线张力器
19:旋转线轴
20:接合台
21:加热器
30:工件
40:操作部
41:显示器
42:照相机
50、114、124:基板
52:电极
60、160:凸块
62:变形球部
64:薄壁部
65:前端部
66:颈部
100:半导体装置
110:第1封装体
112、122:半导体芯片
116、126、w:金属线
120:第2封装体
161:超声波振荡器
fab:无空气焊球
t1、t2、t3、t4、t5、t6、t7、t8:时刻
X1:第1地点
X2:第2地点
X3:第3地点
ZO、Z1、Z2、Z3、Z4:高度
具体实施方式
以下,对本发明的实施方式进行说明。在以下附图的记载中,相同或类似的构成要素是以相同或类似的符号表示。附图是例示,各部分的尺寸或形状是示意性,不应将本申请发明的技术范围限定于所述实施方式而解释。
图1是本实施方式的凸块形成装置的构成图。所述凸块形成装置是例如打线的技术领域中所使用的接合装置。
如图1所示,本实施方式的凸块形成装置1是包括如下构件而构成:控制部10、基台11、XY平台(table)12、接合头(bonding head)13、炬(torch)电极14、毛细管(capillary)15、超声波焊头(ultrasonic horn)16、线夹17、线张力器(tensioner)18、旋转线轴(spool)19、接合台(bonding stage)20、加热器(heater)21、操作部40、显示器(display)41、及照相机(camera)42等。
在以下实施方式中,将平行于成为接合对象的半导体器件(例如半导体芯片)或导线框架(lead frame)的平面设为XY平面,将垂直于XY平面的方向设为Z方向。毛细管15的前端位置是由X坐标、Y坐标、及Z坐标所表示的空间坐标(X,Y,Z)特定。
基台11是将XY平台12可滑动地载置而构成。XY平台12是基于来自控制部10的驱动信号使毛细管15在XY平面上可移动至规定位置的移动装置。
接合头13是与接合臂(未图示)一体地形成,且基于来自控制部10的驱动信号保持超声波焊头16可沿Z方向移动的移动装置。接合头13构成为具备轻量的低重心构造,且可抑制惯性力所导致的毛细管15的移动,所述惯性力是伴随着XY平台12的移动而产生。
超声波焊头16是自末端至前端包括末端部、凸缘(flange)部、焊头部、及前端部的各部分的棒状构件。末端部配置有根据来自控制部10的驱动信号进行振动的超声波振荡器161。凸缘部在成为超声波振动的节点的位置通过接合臂可共振地安装于接合头13。焊头部是较末端部的直径长地延伸的臂,具备将超声波振荡器161的振动的振幅扩大并传递至前端部的构造。前端部成为将毛细管15可更换地保持的安装部。超声波焊头16构成为具备整体上与超声波振荡器161的振动共振的共振构造,且超声波振荡器161及凸缘位于共振时的振动的节点,毛细管15位于振动的腹点。根据这些构成,超声波焊头16作为将电驱动信号转换为机械振动的转换器(transducer)发挥功能。
毛细管15是用于接合的接合工具的一部位。在毛细管15设置有插通孔,且构成为可供用于接合的金属线w插通并抽出。毛细管15通过弹簧力等可更换地安装于超声波焊头16。
线夹17构成为:具备基在控制部10的控制信号进行开闭动作的压电元件,且能以规定的定时固持或释放金属线w。
线张力器18构成为:供金属线w插通,并基于控制部10的控制信号自由地变更对于金属线w的张力,由此对接合中的金属线w赋予适度的张力。
旋转线轴19构成为:将卷绕有金属线w的转盘(reel)可更换地保持,且根据通过线张力器18而达到的张力将金属线w抽出。此外,金属线w的材料根据加工的容易性与低电阻性而选择。通常,使用金(Au)、银(Ag)、铝(Al)或铜(Cu)等。
炬电极14构成为:通过未图示的放电稳定化电阻而连接于未图示的高电压电源,基于来自控制部10的控制信号产生火花(spark)(放电),并可通过火花的热而在自毛细管15的前端抽出的金属线w的前端形成无空气焊球(free air ball)fab。另外,炬电极14的位置被固定,在放电时毛细管15接近至距离炬电极14为规定的距离,而在金属线w的前端与炬电极14之间产生适度的火花。
接合台20是将用以形成凸块的工件(work)30(例如基板或半导体芯片等)载置于加工面的台。构成为在接合台20的加工面的下部设置有加热器21,可将工件30加热至适于接合的温度。
操作部40包括轨迹球(track ball)、鼠标(mouse)、操纵杆(joy stick)、触摸屏(touch panel)等输入单元,且是将操作人员(operator)的操作内容输出至控制部10的输入装置。照相机42构成为可拍摄载置于接合台20的加工面的工件30。显示器41以操作人员可视认的规定的倍率显示由照相机42拍摄到的图像。操作人员一面观察显示器41中所显示的工件30,一面对操作部40进行操作,从而设定毛细管15的轨迹。
控制部10构成为可输出基于规定的软件程序(software program)控制凸块形成装置1的各种控制信号。具体而言,控制部10作为无限定的例示进行以下控制。
(1)基于来自未图示的位置检测传感器的检测信号特定出毛细管15的前端的空间位置(X,Y,Z),并将使毛细管15向由所述程序规定的空间位置移动的驱动信号输出至XY平台12及接合头13。
(2)将接合于接合点时产生超声波振动的控制信号输出至超声波焊头16的超声波振荡器161。
(3)输出以成为由所述程序规定的金属线w的抽出状况的方式控制线夹17的开闭动作的控制信号。具体而言,在抽出金属线w时,将线夹17设为释放状态,当在金属线w形成弯曲点的情况下或切断的情况下将线夹17设为拘束状态。
(4)输出用以于在金属线w的前端形成无空气焊球fab时使炬电极14放电的控制信号。(5)将来自照相机42的图像输出至显示器41。(6)基于操作部40的操作内容,特定接合点、弯曲点等的空间坐标。
此外,所述凸块形成装置1的构成为例示,并不受到所述限定。例如,沿X方向、Y方向、或Z方向移动的移动装置也可设置于接合台20侧,另外,也可设置于凸块形成装置1侧及接合台20侧的两者。
其次,对本实施方式的凸块形成方法进行说明。
图2(A)~图2(E)及图3(A)~图3(C)表示本实施方式的凸块形成方法,图4表示本实施方式的凸块形成方法的时序图。此处,在图4中,纵轴表示毛细管的高度(即毛细管的前端的Z坐标),横轴表示毛细管的位置(即毛细管的中心轴的X坐标)。另外,图4中所记载的时刻t1~时刻t8表示本实施方式的凸块形成方法自开始执行所经过的时间。另外,图2(B)~图2(E)对应于图4的时刻t1~时刻t4,图3(A)及图3(B)对应于图4的时刻t5及时刻t6,图3(C)对应于图4的时刻t8。
首先,对凸块形成装置1的基本动作进行说明。
最初所应做的是对控制部10设定毛细管15的前端15a的轨迹(参照图4)。通过设定变更毛细管15的移动方向的变更点(即XYZ坐标),可使毛细管15沿着规定的轨迹移动。
操作人员一面利用显示器41观察照相机42所拍摄到的图像,一面对操作部40进行操作,而设定轨迹的变更点。具体而言,通过自操作部40输入坐标信息或使显示器41所显示的标记位于所需的点并输入所述标记,而设定所述点的X坐标及Y坐标。自操作部40对自工件30的基准面(例如工件30的表面)向Z方向的位移进行数值输入,由此设定Z坐标。
在对自这些形成的所有凸块进行所述变更点的空间坐标的设定后,开始接合动作。控制部10按照所设定的变更点的顺序,使毛细管15相对于工件的基准面相对地移动,一面利用线夹17反复进行释放及固持一面使毛细管15沿着所设定的轨迹移动,从而执行接合动作。
以下,一面参照图2~图4,一面对本实施方式的凸块形成方法的一例进行说明。在以下的例子中,对如下情况进行说明,即,使用具有电极52的基板50作为工件,且在所述电极52上形成凸块60。此外,在以下的例子中,毛细管15的移动方向是在Y方向上固定坐标。
首先,如图2(A)(时刻t0)所示,在金属线w的前端形成无空气焊球fab。即,使被施加有规定的高电压的炬电极14(参照图1)靠近自毛细管15的前端15a伸出的金属线的一部分,而在所述金属线的一部分与炬电极14之间产生放电。如此,所述金属线的前端通过表面张力而形成熔融的无空气焊球fab。在金属线w的前端形成无空气焊球fab后,使毛细管15朝向基板50的基准面的第1地点X1(例如电极52的中心点)下降。此外,在图4中,省略了图2(A)的时刻t0时的毛细管的轨迹。
其次,如图2(B)(时刻t1)所示,将金属线w的无空气焊球fab接合于基准面的第1地点X1、即基板50的电极52。通过毛细管15下降,而在时刻t1,无空气焊球fab抵接于电极52,并且因赋予至毛细管15的荷重,而通过毛细管15的前端15a使无空气焊球fab变形。毛细管15的前端15a是毛细管15的插通孔的开口端部。
当在第1地点X1接合时,控制部10对超声波焊头16供给控制信号而使超声波振荡器161产生超声波振动,从而通过超声波焊头16及毛细管15对无空气焊球fab施加超声波振动。另外,由于基板50的电极52被加热器21施加有规定的热,故而通过施加至无空气焊球fab的荷重、超声波振动、及由加热器21施加的热的相互作用,而将无空气焊球fab接合于电极52。如此,形成包含金属线的变形球(deformed ball)部62。
此外,如图4所示,所述接合时点(时刻t1)时的毛细管15的高度为Z0,实质上与基板50的基准面的高度相同(严格而言,毛细管15的前端15a仅略微较基准面高相当于变形球部62的一部分的高度)。
继而,如图2(C)(时刻t2)所示,自毛细管15的前端抽出金属线w,并使毛细管15向远离第1地点的方向移动。例如,如图4中的自时刻t1至时刻t2的毛细管15的轨迹所示,使毛细管15在第1地点X1沿相对于基准面垂直的方向自Z0上升至Z1。根据毛细管15自Z0至Z1的移动距离,将规定长度的金属线w自毛细管15的前端15a抽出。
继而,如图2(D)(时刻t3)所示,一面自毛细管15的前端进一步抽出金属线w,一面使毛细管15向基准面的第2地点X2的方向移动。具体而言,如图4中的时刻t2至时刻t3的毛细管15的轨迹所示,使毛细管15在高度Z1沿着相对于基准面平行的方向自第1地点X1朝向第2地点X2的方向移动。根据毛细管15自X1至X2的移动距离,自毛细管15的前端15a进一步抽出规定长度的金属线w。此外,第2地点X2设定为基板50的电极52外侧的位置、和/或设置于电极52上的金属线w的变形球部62外侧的位置。
其后,如图2(E)(时刻t4)所示,在基准面的第2地点X2,通过毛细管15将金属线w的一部分在基板50的基准面上压扁。具体而言,如图4中的自时刻t3至时刻t4的毛细管15的轨迹所示,使毛细管15在第2地点X2沿着相对于基准面垂直的方向自Z1下降至Z0。通过毛细管15下降,而在时刻t4,毛细管15的前端15a抵接于金属线w中自变形球部62伸出至毛细管15的插通孔的部分的一部分,并且因赋予至毛细管15的荷重,而通过毛细管15的前端15a使金属线w的所述一部分变形。与此同时,也可通过加热器21对金属线w中的被毛细管15的前端15a压扁的部分施加热。
也可使第2地点X2处的毛细管15对金属线w的按压力小于第1地点X1处的毛细管15对金属线w的按压力。另外,也可使第2地点X2处的按压力小于通常的打线中的第二接合(second bonding)的按压力。此外,当在第2地点X2处按压时,视需要也可使超声波和/或刮擦(scrub)动作运作。
如此,在第2地点X2,形成金属线w的薄壁部64。所述薄壁部64设置于较毛细管15的插通孔的中心轴略微靠近第1地点X1的位置。例如,薄壁部64是由毛细管15的前端15a导致的工具痕。金属线w的薄壁部64构成为小于金属线w的直径的厚度。薄壁部64的厚度也可设为例如金属线w的直径的50%左右。此外,在时刻t4,金属线w尚未因薄壁部64而被切断,而成为自变形球部62一体地伸出至毛细管15的插通孔的内部的状态。
继而,如图3(A)(时刻t5)所示,使毛细管15与金属线w的薄壁部64一并移动。例如,如图4中的自时刻t4至时刻t5的毛细管15的轨迹所示,使毛细管15在第2地点X2沿着相对于基准面垂直的方向自Z0上升至Z2。时刻t5时的毛细管15的高度Z2既可高于时刻t2及时刻t3时的毛细管15的高度Z1,或者也可实质上与所述高度Z1相同。此外,如图3(A)所示,金属线w的薄壁部64并非必须以与毛细管15的前端15a接触的状态上升,也能够以远离毛细管15的前端15a的状态与毛细管15一并上升。
其后,如图3(B)(时刻t6)所示,使毛细管15自第2地点X2向第3地点X3的方向移动,而将接合于第1地点X1的金属线w(包含变形球部62)以自基准面竖立的方式进行整形。例如,如图4中的自时刻t5至时刻t6的毛细管15的轨迹所示,使毛细管15在高度Z2沿着相对于基准面平行的方向自第2地点X2朝向第3地点X3的方向移动。第3地点X3是连结第2地点X2与第1地点X1的直线上的地点,且是具有如下关系的地点,即,在第3地点X3与第2地点X2之间配置第1地点X1。也可如图3(B)所示那样,以毛细管15的前端15a中的第2地点X2侧的部分(图3(B)的纸面的右侧部分)位于第1地点X1的上方附近的方式,设定第3地点X3。换言之,也能够以毛细管15的插通孔的中心轴位于以第1地点X1为基准与第2地点X2为相反侧的位置的方式,设定第3地点X3。即,能够以如下方式矫正金属线w的状态,即,通过使毛细管15以毛细管15的中心轴超过接合于第1地点X1的金属线w的中心轴(与X1一致)的方式移动,而使接合于第1地点X1上的金属线w自基准面垂直地竖立。
继而,如图4的自时刻t6至时刻t7的轨迹所示,使毛细管15沿着相对于基准面垂直的方向上升至高度Z3。此时,通过线夹17(参照图1)使金属线w成为释放状态,而与毛细管15的移动量相应地自毛细管15的前端抽出规定量的金属线w。即,自时刻t6至时刻t7的抽出量成为用以形成下一个凸块的线尾(wire tail)。其后,在通过线夹17拘束金属线w的状态下,如图4的自时刻t7至时刻t8的轨迹所示,使毛细管15沿着相对于基准面垂直的方向进一步上升至高度Z4。如此,对金属线w强制性地施加拉伸应力,从而如图3(C)所示那样将金属线w在薄壁部64切断。此外,线夹17在时刻t7至时刻t8期间将金属线w设为拘束状态,在此之前的期间即至少自时刻t1至时刻t6期间将金属线w设为释放状态。
如此,可在基板50的电极52上形成具有自基准面竖立的形状(规定的高度)的凸块60。当在基板50形成多个凸块的情况下,对每个电极重复进行所述各步骤。
如图3(C)所示,通过本实施方式的凸块形成方法而形成的凸块60包含接合于基准面的变形球部62、与在变形球部62上自基准面竖立而形成的颈部66。颈部66的高度大致等于图4所示的高度Z1与高度Z0的差量。颈部66具有所述薄壁部64因毛细管15的移动而被切断而成的前端部65。如图5(A)所示,颈部66的前端部65具有如颈部66的宽度向前端方向变得更宽的形状。另外,如图5(B)所示,颈部66的前端部65具有被毛细管15压扁而成的倾斜面,且具有如朝向前端而前端变细的形状。
如上所述,根据本实施方式的凸块形成方法,通过接合工具(毛细管15)在金属线w形成薄壁部64,并将接合于第1地点X1的金属线w以自基准面竖立的方式进行整形后,将金属线w在薄壁部64切断,由此在第1地点X1形成具有自基准面竖立的形状的凸块。因此,可更简便且有效率地形成具有所需高度的凸块60。
可使用所述凸块形成方法制造半导体装置。所述半导体装置具备通过所述各步骤而形成的凸块60。凸块60对于要求以在某种程度上受到限制的窄间距间隔形成固定以上的高度的用途而言特佳。
如图6所示,也可将本实施方式的凸块160应用于具有POP(Package On Package:叠合式封装)的封装实施方式的半导体装置100。所述半导体装置100包括第1封装体110与第2封装体120,且在第1封装体110上层叠有第2封装体120,所述第1封装体110是将半导体芯片112及基板114通过金属线116电性连接而构成,所述第2封装体120是将半导体芯片122及基板124通过金属线126电性连接而构成。第1封装体110是在基板114上形成有凸块160,凸块160构成为较搭载于基板114上的半导体芯片112或金属线116高。由此,可一面保持规定的间距间隔一面对封装体110的上表面提供与外部的电性连接部。此外,通过本实施方式的凸块形成方法而形成的半导体装置用凸块并不限于所述半导体装置的例子,可应用于其他各种实施方式。
本发明并不限定于所述实施方式,可进行各种变形而应用。
接合工具(毛细管15)的移动轨迹并不限于图4的箭头所示的实施方式,可采取各种实施方式。
此处,图7~图10表示毛细管15的移动轨迹的变形例。此外,毛细管15的空间坐标及利用所述空间坐标的处理内容与所述实施方式的说明相同。在以下的变形例中,在第1地点X1接合金属线后至在第1地点X1对金属线进行竖立整形期间的毛细管15的移动轨迹与图4所示的例子不同。
例如,也可如图7所示那样,自时刻t1至时刻t2,使毛细管15朝向第2地点X2的上方以描绘规定的曲线(例如图示那样基准面侧呈凹状的朝向的曲线)的方式移动至高度Z1。即,也可使毛细管15以描绘半圆状的轨迹的方式移动。由此,可将毛细管15不通过第1地点X1处的高度Z1的坐标而配置于第2地点X2的上方,故而可缩短毛细管的移动距离而更有效率地形成凸块。另外,可不损及接合于第1地点X1的金属线的形状而使毛细管15移动。此外,图7中的时刻t2~时刻t7的毛细管15的移动轨迹如对图4中的时刻t3~时刻t8所说明那样。
或者,也可如图8所示那样,与图7的例子同样地在自时刻t1至时刻t3使毛细管15移动后,自时刻t3至时刻t4,使毛细管15朝向第3地点X3的上方以描绘规定的曲线(例如图示那样基准面侧呈凹状的朝向的曲线)的方式移动至高度Z2。由此,可将毛细管15不通过第1地点X1处的高度Z2的坐标而配置于第3地点X3的上方,故而可缩短毛细管的移动距离而更有效率地形成凸块。另外,可不损及接合于第1地点X1的金属线的形状而使毛细管15移动。此外,图8中的时刻t4~时刻t6的毛细管15的移动轨迹如对图4中的时刻t6~时刻t8所说明那样。
或者,也可如图9所示那样,与图4的例子同样地在时刻t1至时刻t2使毛细管15移动后,自时刻t2至时刻t3,使毛细管15朝向第2地点X2以描绘规定的曲线(例如图示那样基准面侧呈凹状的朝向的曲线)的方式移动。由此,可将毛细管15不通过第2地点X2处的高度Z1的坐标而配置于第2地点X2,故而可缩短毛细管的移动距离而更有效率地形成凸块。另外,可不损及接合于第1地点X1的金属线的形状而使毛细管15移动。此外,图9中的时刻t3~时刻t7的毛细管15的移动轨迹如对图4中的时刻t4~时刻t8所说明那样。
或者,也可如图10所示那样,与图9的例子同样地在时刻t1至时刻t3使毛细管15移动后,与图8的例子同样地自时刻t3至时刻t4使毛细管15移动。此外,图10中的时刻t4至时刻t6的毛细管15的移动轨迹如对图4中的时刻t6~时刻t8所说明那样。
另外,在所述实施方式中,最初对如图2(A)所示那样在金属线w的前端形成焊球fab的例子进行了说明,但也可省略所述球形成步骤。例如,在使用铝作为金属线的材料的情况下,也可不形成球,而将金属线的一部分接合于第1地点X1。
另外,在所述实施方式中,对如下例子进行了说明,即,通过使毛细管15移动至以第1地点X1为基准与第2地点X2为相反侧的位置即第3地点X3而对金属线w的形状进行整形,但只要能够将金属线w整形为在第1地点X1上竖立的形状,则毛细管的移动方式并不限定于此。例如,也可将Y坐标固定而使毛细管15自第2地点X2移动至第1地点X1。另外,在此情况下,也可使Y坐标变动。在本实施方式的凸块形成方法中,用以形成具有在第1地点X1上竖立的形状的凸块的毛细管15的移动方式可基于金属线的材质、金属线的按压力、根据毛细管15所描绘的轨迹而施加至金属线的荷重等,进行各种变形。
通过所述发明的实施方式所说明的实施例或应用例可根据用途适当进行组合、或者加以变更或改良而使用,本发明并不限定于所述实施方式的记载。根据权利要求书的记载可明确,此种组合或者加以变更或改良后的实施方式也可包含在本发明的技术范围内。

Claims (12)

1.一种凸块形成方法,其是使用插通有金属线的接合工具而形成半导体装置用的凸块的方法,所述凸块形成方法包括:
接合步骤,使所述接合工具朝向基准面的第1地点下降,而将自所述接合工具的前端伸出的所述金属线的前端接合于所述第1地点;
金属线抽出步骤,一面自所述接合工具的前端抽出所述金属线一面使所述接合工具沿着相对于所述基准面垂直的方向移动至第1高度,其后,使所述接合工具朝向所述基准面的第2地点移动;
薄壁部形成步骤,通过在所述基准面的所述第2地点利用所述接合工具按压所述金属线的一部分,而在所述金属线形成薄壁部;
金属线整形步骤,使所述接合工具与所述金属线的所述薄壁部一并朝向所述基准面的第3地点的上方移动至较所述第1高度高的第2高度,而将接合于所述第1地点的所述金属线以自所述基准面竖立的方式进行整形;及
凸块形成步骤,通过将所述金属线在所述薄壁部切断,而在所述第1地点形成具有自所述基准面竖立的形状的凸块;
所述第3地点是连结所述第2地点与所述第1地点的直线上的地点,且是具有如下关系的地点,即,在所述第3地点与所述第2地点之间配置所述第1地点。
2.根据权利要求1所述的凸块形成方法,其中在所述金属线抽出步骤中,一面使所述接合工具维持所述第1高度一面沿着平行方向朝向所述第2地点移动,其后,使所述接合工具沿着相对于所述基准面垂直的方向朝向所述第2地点移动。
3.根据权利要求1所述的凸块形成方法,其中在所述金属线抽出步骤中,使所述接合工具自所述第1高度朝向所述第2地点以描绘规定的曲线的方式移动。
4.一种凸块形成方法,其是使用插通有金属线的接合工具而形成半导体装置用的凸块的方法,所述凸块形成方法包括:
接合步骤,使所述接合工具朝向基准面的第1地点下降,而将自所述接合工具的前端伸出的所述金属线的前端接合于所述第1地点;
金属线抽出步骤,一面自所述接合工具的前端抽出所述金属线一面使所述接合工具朝向第2地点的上方以描绘规定的曲线的方式移动至第1高度,其后,沿着相对于所述基准面垂直的方向朝向所述第2地点移动;
薄壁部形成步骤,通过在所述基准面的所述第2地点利用所述接合工具按压所述金属线的一部分,而在所述金属线形成薄壁部;
金属线整形步骤,使所述接合工具与所述金属线的所述薄壁部一并朝向所述基准面的第3地点的上方移动至较所述第1高度高的第2高度,而将接合于所述第1地点的所述金属线以自所述基准面竖立的方式进行整形;及
凸块形成步骤,通过将所述金属线在所述薄壁部切断,而在所述第1地点形成具有自所述基准面竖立的形状的凸块;
所述第3地点是连结所述第2地点与所述第1地点的直线上的地点,且是具有如下关系的地点,即,在所述第3地点与所述第2地点之间配置所述第1地点。
5.根据权利要求4所述的凸块形成方法,其中在所述金属线整形步骤中,使所述接合工具沿着相对于所述基准面垂直的方向移动至所述第2高度,其后,一面维持所述第2高度一面沿着平行方向朝向所述第3地点移动。
6.根据权利要求1或4所述的凸块形成方法,其中在所述金属线整形步骤中,使所述接合工具朝向所述第3地点的上方以描绘规定的曲线的方式移动至所述第2高度。
7.根据权利要求1或4所述的凸块形成方法,其中在所述金属线整形步骤后且所述金属线切断步骤前,还包括一面自所述接合工具的前端抽出所述金属线一面使所述接合工具上升的步骤。
8.根据权利要求1或4所述的凸块形成方法,其中在所述凸块形成步骤中,通过在利用线夹拘束所述金属线的状态下使所述接合工具进一步上升,而将所述金属线在所述薄壁部切断。
9.根据权利要求1或4所述的凸块形成方法,其中在所述接合步骤前,还包括使所述金属线的前端成为球状的步骤。
10.根据权利要求1或4所述的凸块形成方法,其中在所述薄壁部形成步骤中,以所述金属线的所述薄壁部的厚度成为所述金属线的直径的一半的方式按压所述金属线。
11.一种半导体装置的制造方法,包括根据权利要求1或4所述的凸块形成方法。
12.一种凸块形成装置,使用插通有金属线的接合工具而形成半导体装置用的凸块;
所述凸块形成装置包括控制所述接合工具的动作的控制部;
所述控制部构成为执行如下步骤:
接合步骤,使所述接合工具朝向基准面的第1地点下降,而将自所述接合工具的前端伸出的所述金属线的前端接合于所述第1地点;
金属线抽出步骤,一面自所述接合工具的前端抽出所述金属线一面使所述接合工具向远离所述第1地点的方向移动至第1高度,其后,使所述接合工具朝向所述基准面的第2地点移动;
薄壁部形成步骤,通过在所述基准面的所述第2地点利用所述接合工具按压所述金属线的一部分,而在所述金属线形成薄壁部;
金属线整形步骤,使所述接合工具与所述金属线的所述薄壁部一并朝向所述基准面的第3地点的上方移动至较所述第1高度高的第2高度,而将接合于所述第1地点的所述金属线以自所述基准面竖立的方式进行整形;及
凸块形成步骤,通过将所述金属线在所述薄壁部切断,而在所述第1地点形成具有自所述基准面竖立的形状的凸块;
所述第3地点是连结所述第2地点与所述第1地点的直线上的地点,且是具有如下关系的地点,即,在所述第3地点与所述第2地点之间配置所述第1地点。
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