CN106165077B - 半导体装置的制造方法、半导体装置以及打线装置 - Google Patents
半导体装置的制造方法、半导体装置以及打线装置 Download PDFInfo
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Abstract
本发明涉及一种半导体装置的制造方法、半导体装置以及打线装置。半导体装置的制造方法包括:将金属线抽出且使接合工具上升并自第2接合点向第1接合点侧的方向移动,在自接合工具的前端延伸出的金属线中的第2接合点附近,形成弯曲的被切断部;使接合工具下降,并使接合工具的前端压抵于金属线且使接合工具移动至金属线的被切断部;使接合工具朝第2接合点向铅垂方向下降而加压,由此使金属线的被切断部变薄;将金属线抽出且使接合工具上升;使接合工具沿远离第1接合点及第2接合点的方向且为将第1接合点与第2接合点连结的金属线方向移动,将金属线在被切断部切断,由此在接合工具的前端形成线尾。由此简便且有效率地将线尾的长度调整为一定。
Description
技术领域
本发明涉及一种半导体装置的制造方法、半导体装置以及打线(wire bonding)装置。
背景技术
当制造半导体装置时,例如广泛采用打线,利用金属线(wire)将半导体芯片(chip)的电极与基板的电极电性连接。作为打线方法的一实施方式,已知有楔形接合(wedge bonding)方式,不在金属线前端形成球(ball)而将金属线连接于接合对象。根据楔形接合方式,利用金属线将第1接合点与第2接合点之间连接之后,将自接合工具(bondingtool)的前端延伸出的金属线的一部分切断,在接合工具的前端形成用于下次打线的线尾(wire tail),且不进行球形成步骤而将所述线尾直接接合于下次第1接合点。
然而,当将第1接合点设为半导体芯片的电极时,有如下情况:接合于第1接合点之后的线尾的前端会接触于半导体芯片上的邻接的电极或钝化膜(passivation film),由此会导致半导体芯片损伤或不良。
为了解决此种问题,例如专利文献1所记载那样有如下方法,即,准备用于将线尾的前端向上方弯曲的构件(模具),在进行向第1接合点的接合之前使接合工具移动至所述构件上而整理线尾的形状,但需要在每次进行打线时均使接合工具移动,从而难以说得上是简便且有效率的制造方法。或者,鉴于此种问题仅可产生在第1接合点,而也考虑通过使接合顺序颠倒的逆接合来解决,但接合顺序会受到制约,无法说得上是打线方法的设计自由度高。
现有技术文献
专利文献
专利文献1:日本专利特开2003-318216号公报
发明内容
发明所要解决的问题
因此,本发明的目的在于提供一种可解决所述问题的半导体装置的制造方法、半导体装置以及打线装置。
解决问题的技术手段
本发明的一实施方式的半导体装置的制造方法是具有将第1接合点与第2接合点连接的线弧(wire loop)的半导体装置的制造方法,且包括:第1接合步骤,将插通接合工具的金属线接合于第1接合点;线弧形成步骤,一面将金属线抽出,一面使金属线形成线弧;第2接合步骤,将金属线接合于第2接合点;被切断部形成步骤,一面将金属线抽出,一面使接合工具上升并且自第2接合点向第1接合点侧的方向移动,而在自接合工具的前端延伸出的金属线中的第2接合点附近,形成弯曲的被切断部;接合工具移动步骤,使接合工具下降,并且一面使接合工具的前端压抵于金属线,一面使接合工具移动至金属线的被切断部;薄壁部形成步骤,使接合工具朝第2接合点向铅垂方向下降而进行加压,由此使金属线的被切断部变薄;接合工具上升步骤,一面将金属线抽出,一面使接合工具上升;以及线尾形成步骤,使接合工具沿远离第1接合点及第2接合点的方向且为将第1接合点与第2接合点连结的金属线方向移动,而将金属线在被切断部切断,由此在接合工具的前端形成线尾。
根据所述构成,在自接合工具的前端延伸出的金属线中的第2接合点附近,形成金属线成为容易被切断的状态的被切断部,而可在所述被切断部将金属线切断,因此,可简便且有效率地将线尾的长度调整为一定。由此例如可使线尾的长度减小,而例如在下次打线的第1接合点处的接合中,可将金属线的前端部切实地配置于电极的区域内,从而可实现半导体装置的窄间距化及高可靠性化。
在所述半导体装置的制造方法中,也可在被切断部形成步骤中,使接合工具上升至第1高度,在接合工具移动步骤中,使接合工具下降至较第1高度更低的第2高度,在所述第2高度,一面使接合工具的前端压抵于金属线,一面使接合工具移动至金属线的被切断部,在薄壁部形成步骤中,对接合工具进行加压直至较第2高度更低的第3高度。
在所述半导体装置的制造方法中,也可在接合工具移动步骤中,使接合工具的前端压抵于金属线中的较第2接合点更靠第1接合点侧附近。
在所述半导体装置的制造方法中,也可在薄壁部形成步骤中,使接合工具一面维持于第3高度一面沿金属线方向移动。
本发明的一实施方式的半导体装置包括:作为第1接合点的第1电极,接合有线尾;作为第2接合点的第2电极,接合有金属线;以及线弧,呈规定形状延伸出以将第1电极与第2电极之间连接;且线弧具有与第1电极的第1接合部,线弧中的第1接合部侧的第1前端部配置于第1电极的俯视时的区域内,且以与第1接合部一体地构成较金属线直径更薄的薄壁部的方式而形成。
根据所述构成,可避免金属线的前端部自第1接合点伸出而接触于其他电极等,因此,可避免或抑制半导体装置损伤或者不良。因此,可提供对应于窄间距(例如锯齿状的衬垫(pad)排列)且可靠性高的半导体装置。
在所述半导体装置中,也可在线弧中的自第1电极立起的部分,形成有凹部。
在所述半导体装置中,也可第1电极设于半导体芯片,第1电极的区域为自形成于半导体芯片上的钝化膜露出的区域,第2电极设于搭载有半导体芯片的基板。
本发明的一实施方式的打线装置是制造具有利用金属线将第1接合点与第2接合点连接的线弧的半导体装置的打线装置,且包括:接合臂,能够在接合区域内的XY平面以及Z方向自如地移动;超声波焊头,安装于接合臂的前端;接合工具,安装于超声波焊头的一端,将插通接合工具的内部的金属线按压至作为接合对象的第1接合点与第2接合点;以及控制部,控制接合工具的动作;且控制部构成为能够执行以下步骤:一面将金属线抽出,一面使接合工具上升并且自第2接合点向第1接合点侧的方向移动,而在自接合工具的前端延伸出的金属线中的第2接合点附近,形成弯曲而成的被切断部的步骤;使接合工具下降,并且一面使接合工具的前端压抵于金属线,一面使接合工具移动至金属线的被切断部的步骤;对接合工具进行加压,由此使金属线的被切断部变薄的步骤;一面将金属线抽出,一面使接合工具上升的步骤;以及使接合工具向远离第2接合点的方向移动,而将金属线在被切断部切断,由此在接合工具的前端形成线尾的步骤。
根据所述构成,在自接合工具的前端延伸出的金属线中的第2接合点附近,形成金属线成为容易被切断的状态的被切断部,而可在所述被切断部将金属线切断,因此,可简便且有效率地将线尾的长度调整为一定。由此例如可使线尾的长度减小,而例如在下次打线的第1接合点处的接合中,可将金属线的前端部切实地配置于电极的区域内,从而可实现半导体装置的窄间距化及高可靠性化。
发明的效果
根据本发明,可简便且有效率地将打线中的线尾的长度调整为一定。由此可提供对应于窄间距化且可靠性高的半导体装置的制造方法、半导体装置以及打线装置。
附图说明
图1是表示本实施方式的打线装置的图。
图2(A)及图2(B)是本实施方式的打线装置的接合臂(bonding arm)的平面的俯视图及仰视图。
图3是本实施方式的半导体装置的制造方法的流程图(flow chart)。
图4(A)~图4(D)是用于对本实施方式的半导体装置的制造方法进行说明的图。
图5(A)~图5(C)是用于对本实施方式的半导体装置的制造方法进行说明的图。
图6是与本实施方式的半导体装置的制造方法相关的时序图(timing chart)。
图7是用于对使用本实施方式的半导体装置的制造方法所制造的半导体装置进行说明的图。
图8(A)及图8(B)是用于对使用本实施方式的半导体装置的制造方法所制造的半导体装置进行说明的图,图8(A)是应用本发明的一例,图8(B)是比较例。
符号的说明
1:打线装置
20:接合臂
30:超声波焊头
40:接合工具(毛细管)
42:金属线
43:线尾
49:凹部
80:控制部
92:被切断部
100:接合对象物(半导体装置)
110:半导体芯片
112:电极
114:钝化膜
120:基板
122:电极
132:薄壁部
具体实施方式
以下,对本发明的实施方式进行说明。在以下的附图的记载中,相同或类似的构成要素以相同或类似的符号表示。附图为例示,各部分的尺寸或形状为示意性,不应将本申请发明的技术范围限定于所述实施方式而解释。
图1是表示本实施方式的打线装置的图,图2(A)及图2(B)是打线装置中的接合臂的局部放大图,图2(A)是接合臂的俯视图,图2(B)是接合臂的仰视图。
如图1所示,打线装置1包括XY驱动机构10、接合臂20、超声波焊头(ultrasonichorn)30、接合工具40、负荷传感器(sensor)50、超声波振动元件60以及控制部80。
XY驱动机构10构成为能够沿XY轴方向(平面方向)移动,在XY驱动机构(线性马达(linear motor))10设置有Z驱动机构(线性马达)12,所述Z驱动机构12使接合臂20能够沿Z轴方向(上下方向)移动。接合臂20构成为能够在接合区域内的XY平面及Z方向自如地移动。
接合臂20由支轴14支撑,相对于XY驱动机构10而摆动自如地构成。接合臂20是以自XY驱动机构10向放置有接合对象物100的接合台(bonding stage)16延伸出的方式而呈大致长方体地形成。接合臂20包括:臂基端部22,安装于XY驱动机构10;臂前端部24,位于臂基端部22的前端侧,且安装有超声波焊头30;以及连结部23,将臂基端部22与臂前端部24连结,且具有可挠性。所述连结部23包括:规定宽度的狭缝(slit)25a、狭缝25b,自接合臂20的顶面21a向底面21b的方向延伸出;以及规定宽度的狭缝25c,自接合臂20的底面21b向顶面21a的方向延伸出。如此,连结部23利用各狭缝25a、狭缝25b、狭缝25c而局部地作为薄壁部构成,因此,臂前端部24是以相对于臂基端部22而挠曲的方式构成。
如图1及图2(B)所示,在接合臂20的底面21b侧,形成有收容超声波焊头30的凹部26。超声波焊头30在收容于接合臂20的凹部26的状态下,利用焊头固定螺钉32而安装于臂前端部24。所述超声波焊头30在自凹部26突出的前端部保持有接合工具40,且在凹部26内设置有产生超声波振动的超声波振动元件60。利用超声波振动元件60而产生超声波振动,所述超声波振动利用超声波焊头30而传递至接合工具40,从而可通过接合工具40对接合对象赋予超声波振动。超声波振动元件60例如为压电式(piezo)振动元件。
另外,如图1及图2(A)所示,在接合臂20的顶面21a侧,自顶面21a朝底面21b依序形成有狭缝25a及狭缝25b。上部的狭缝25a较下部的狭缝25b更宽地形成。而且,在所述较宽地形成的上部的狭缝25a,设置有负荷传感器50。负荷传感器50利用施压用螺钉52而固定于臂前端部24。负荷传感器50以夹入的方式配置于臂基端部22与臂前端部24之间。即,负荷传感器50自超声波焊头30的长度方向的中心轴向相对于接合对象接近/远离的方向偏移(offset),且安装于接合臂20的旋转中心与臂前端部24的超声波焊头30的安装面(即,臂前端部24的接合工具40侧的前端面)之间。而且,如上所述,保持接合工具40的超声波焊头30安装于臂前端部24,因此,若利用来自接合对象的反作用力对接合工具40的前端施加负荷,则臂前端部24会相对于臂基端部22而挠曲,从而在负荷传感器50能够检测出负荷。负荷传感器50例如为压电式负荷传感器。
接合工具40用于供金属线42插通,例如为设置有插通孔41的毛细管(capillary)(参照图4(A))。此时,在接合工具40的插通孔41中插通有用于接合的金属线42,且构成为能够将金属线42的一部分自所述接合工具40的前端抽出。而且,在接合工具40的前端,设置有用于对金属线42进行按压的按压部47(参照图4(A))。按压部47具有绕接合工具40的插通孔41的轴方向为旋转对称的形状,且在插通孔41的周围的下表面具有按压面48。
接合工具40利用弹簧力等而能够更换地安装于超声波焊头30。而且,在接合工具40的上方设置有线夹(wire clamper)44,线夹44构成为在规定的时序将金属线42束紧或释放。在线夹44的更上方设置有线张紧器(wire tensioner)46,线张紧器46构成为供金属线42插通,且对接合中的金属线42赋予适度的张力。
金属线42的材料自容易加工与电阻低等方面适当选择,例如使用金(Au)、铝(Al)、铜(Cu)或银(Ag)等。再者,金属线42自接合工具40的前端延伸出的一部分43接合于第1接合点。
控制部80连接于XY驱动机构10、Z驱动机构12、超声波焊头30(超声波振动元件60)以及负荷传感器50,利用控制部80对这些构成的动作进行控制,由此可进行用于打线的必要处理。控制部80包括界面(interface)(未图示),所述界面在与例如XY驱动机构10、Z驱动机构12、负荷传感器50、超声波焊头30(超声波振动元件60)、线夹44等各构成之间进行信号的收发。具体而言,控制部80进行接合工具40的XYZ轴方向的移动距离或Z方向的负荷的控制、线夹44的开闭动作、对接合工具40赋予的超声波振动的时序或时间以及刮擦(scrub)动作的控制等与接合工具的动作相关的控制。
另外,在控制部80,连接有用于输入控制信息的操作部82、以及用于输出控制信息的显示部84,由此作业者可一面利用显示部84识别画面,一面利用操作部82输入必要的控制信息。再者,控制部80是包括中央处理器(Central Processing Unit,CPU)及存储器(memory)等的计算机(computer)装置,且在存储器中预先存储有用于进行打线所需的处理的接合程序(bonding program)等。控制部80包括用于进行各处理的手段(用于使计算机执行各处理的程序),所述各处理会在后述的半导体装置的制造方法中进行说明,且是用于对接合工具40的动作进行控制。
接下来,也参照图3~图6,对本实施方式的半导体装置的制造方法进行说明。所述半导体装置的制造方法包括使用所述打线装置1所进行的打线方法。
此处,图3是半导体装置的制造方法的流程图,图4(A)~图4(D)及图5(A)~图5(C)表示打线的处理。另外,图6是与半导体装置的制造方法相关的时序图。再者,图4(A)所示的XYZ轴的朝向对应于图1、图2(A)及图2(B)的XYZ轴的朝向,而且,所述朝向也同样适用于图4(A)~图4(D)、图5(A)~图5(C)以及图6。
首先,在接合台16上准备接合对象物100。
如图1所示,接合对象物100具有利用本实施方式的半导体装置的制造方法而电性连接的第1接合点与第2接合点。此处,所谓第1接合点是指利用金属线而连接的两点中的最初接合的部位,所谓第2接合点是指所述两点中的后续接合的部位。
接合对象物100是包含至少一个半导体芯片的半导体装置,例如图1所示,包括具有作为第1接合点的多个电极112的半导体芯片110、以及具有作为第2接合点的多个电极122的基板120,利用打线形成将电极112与电极122之间分别连接的线弧,而可将两者电性连接。在半导体芯片110的电极112的形成面(形成有半导体元件的一侧的表面),形成有作为保护膜的钝化膜114(图1中省略,参照图7),多个电极112分别自钝化膜的开口部露出。半导体芯片110搭载于基板120上。此种实施方式中,通常将以自半导体芯片110的电极112至基板120的电极122的顺序接合的情况称为正接合,在以下的例子中对正接合的例子进行说明,但本实施方式的打线也适用于以自基板120的电极122至半导体芯片110的电极112的顺序接合的所谓逆接合。
<时刻t0以前及时刻t0~时刻t1的处理>
如图3所示,利用金属线将作为第1接合点的半导体芯片110的电极112与作为第2接合点的基板120的电极122连接(S10)。
具体而言,将自接合工具40的前端延伸出的金属线的一部分接合于半导体芯片110的电极112(第1接合点),然后,一面将金属线自接合工具40的前端抽出,一面使接合工具40沿规定的轨迹移动而形成线弧,并且使接合工具40移动至基板120的电极122(第2接合点)的上方后,使接合工具40下降。然后,如图4(A)及图6所示,花费时刻t0至时刻t1的时间,在闭合线夹44的状态下对接合工具40进行加压直至高度Z0,而将金属线42的一部分接合于基板120的电极122。具体而言,利用接合工具40的按压部47(按压面48)对金属线42的一部分进行加压。此时,视需要产生热、超声波以及进行刮擦动作,由此将金属线与电极接合。如此,利用金属线将作为第1接合点的电极112与作为第2接合点的电极122连接。
<时刻t1~时刻t5的处理>
结束第2接合点处的接合之后,如图3所示,一面将金属线42抽出,一面使接合工具40上升至高度Z1并且自第2接合点向第1接合点侧的方向移动,从而在自接合工具40的前端延伸出的金属线42中的第2接合点附近形成被切断部92(S11)。例如图6所示,在时刻t1,使Z驱动机构12运作而使接合工具40上升,接下来,使XY驱动机构10运作而使接合工具40向第1接合点侧的方向(图4(B)中Y方向)移动,由此使接合工具40朝第1接合点侧向斜上方移动,在时刻t2,如图4(B)所示,将接合工具40配置于高度Z1。此时,自图4(A)至图4(B)的接合工具40的Y方向的移动量能够适当调整,例如也可为金属线直径程度的大小。如图4(B)所示,在时刻t2,金属线的被切断部92成为通过接合工具40向Y方向移动,使金属线弯曲而形成的弯曲部。另外,金属线的被切断部92设于第2接合点附近,即,金属线与电极的接合部90附近。
然后,使接合工具40下降至高度Z2,并且一面使接合工具40的前端压抵于金属线42,一面使接合工具40移动至被切断部92(S12)。例如图6所示,在时刻t2,使Z驱动机构12运作而使接合工具40下降,接下来,使XY驱动机构10运作而使接合工具40进一步朝第1接合点侧向斜下方移动,在时刻t3,如图4(C)所示,将接合工具40配置于高度Z2。此时,接合工具40的前端的按压部47(按压面48)成为压抵于金属线42的一部分的状态。接合工具40的前端抵接于金属线的位置可为第2接合点上的接合部90,或者也可为金属线自第2接合点立起的部分(例如,未通过第2接合点处的接合而形成缝点(stitch)的位置)。在时刻t3以后,在维持高度Z2的状态下使XY驱动机构10运作,将接合工具40以使其前端一面压抵于金属线42一面在接合部90上滑动的方式向Y方向拉伸,且如图4(D)所示,使接合工具40移动至被切断部92。
将接合工具40配置于被切断部92上之后,通过接合工具40的按压部47(按压面48)对金属线的被切断部92进行加压,使被切断部92变薄(S13)。具体而言,如图5(A)及图6所示,花费时刻t4至时刻t5的时间,对接合工具40进行加压直至高度Z3,通过接合工具40的按压部47(按压面48)使被切断部92塑性变形而变薄。由此将被切断部92形成为薄壁部。再者,也可在时刻t4至时刻t5之间的至少一部分时间,使XY驱动机构10运作,使接合工具40一面维持于高度Z3一面沿远离第1接合点及第2接合点的方向且为金属线方向(在XY平面的将第1接合点与第2接合点连结的方向)移动。
如此,花费时刻t1至时刻t5的时间,使金属线42至少弯曲一次并且对其施加应力,由此使金属线42变薄地塑性变形,而使被切断部92的刚性及拉伸强度降低,将金属线加工成在被切断部92容易被切断的状态。再者,如图6所示,在时刻t1至时刻t5的时间,在线夹44打开的状态下控制接合工具40的动作。
<时刻t5~时刻t6的处理>
结束被切断部92的塑性变形之后,一面将金属线42抽出一面使接合工具40上升(S14)。具体而言,如图5(B)及图6所示,在时刻t5,在打开线夹44的状态下,使Z驱动机构12运作而使接合工具40上升。由此使金属线42自接合工具40的前端延伸出。
然后,使接合工具40向远离第2接合点的方向移动,而将金属线42在被切断部92切断(S15)。具体而言,如图6所示,使Z驱动机构12运作而使接合工具40上升,并且在闭合线夹44的状态下,也使XY驱动机构10运作而使接合工具40向远离第2接合点的方向(与第1接合点为相反侧的Y方向)移动。如此,在自使接合工具40上升的时刻t5至时刻t6的任一时序,对金属线42施加拉伸应力而将金属线42在被切断部92切断。此时的接合工具40的移动的轨迹并无特别限定,例如也可包括如下情况:在时刻t5上升,然后,朝与第1接合点相反的一侧向斜上方移动,进而向横方向(Y方向)移动。金属线42被切断的时序也并无特别限定,例如也可如图5(C)所示,在Z驱动机构12未运作的状态下通过XY驱动机构10的运作而接合工具40向Y方向移动时,金属线42被切断。
通过此种处理,如图5(C)所示,可形成为了将第1接合点与第2接合点之间连接而呈规定形状延伸出的线弧130,且可在作为第2接合点的电极122上形成金属线的接合部134。
另外,在接合工具40的前端形成有线尾43。由于金属线在作为第2接合点附近的预先决定的位置(被切断部92的位置)被切断,故而可利用抽出所述金属线的量而控制线尾43的长度。另外,因接合工具40而在插通的金属线42上,在接合工具40的插通孔41的开口附近形成有凹部49。凹部49是因切断步骤中的接合工具40的移动操作而形成,且是由接合工具40的插通孔41的开口端部抵接于金属线42而形成的工具痕所形成的凹部。
如此,形成将第1接合点与第2接合点连接的线弧130,并且在接合工具40的前端形成线尾43之后,判定是否需要对接合对象物100进行下次打线(S16),当需要时(S16是(Yes)),使接合工具40向用于下次打线的第1接合点移动,将线尾43接合于第1接合点,且重复进行S10~S15的一连串的步骤。另一方面,当无需进行下次打线,对接合对象物100的打线全部结束时(S16否(No)),结束对所述接合对象物100的打线步骤。
如上所述,根据本实施方式,在自接合工具40的前端延伸出的金属线中的第2接合点(电极122)附近,形成金属线42成为容易被切断的状态的被切断部92,而可在所述被切断部92将金属线42切断,因此,可简便且有效率地将线尾43的长度调整为一定。由此例如可使线尾43的长度减小,而例如在下次打线的第1接合点(电极112)处的接合中,可将金属线42的前端部切实地配置于电极的俯视时的区域内,从而可实现半导体装置的窄间距化及高可靠性化。
使用本实施方式的半导体装置的制造方法,可制造例如图7及图8(A)所示的半导体装置。再者,图8(A)是图7所示的半导体装置中的作为第1接合点的第1电极112附近的放大立体图,图8(B)表示与图8(A)对应的图示的比较例(现有方法所制成的例子)。
如图7所示,半导体装置100a包括:作为第1接合点的第1电极112,接合有所述半导体装置的制造方法中所说明的线尾43;作为第2接合点的第2电极122,接合有金属线42;以及线弧130,用于将第1电极112与第2电极122之间连接且呈规定形状延伸出。与第1电极及第2电极相关的构成如以上所说明,例如第1电极112在半导体芯片110的表面(形成有半导体元件的一侧的表面)形成有多个,且各电极112具有自半导体芯片110上的形成于表面的钝化膜(保护膜)114开口的露出区域。另外,第2电极122作为形成于基板120的配线图案(pattern)的一部分而形成有多个。
而且,如图8(A)所示,线弧130具有与第1电极112的第1接合部132,线弧130中的第1电极112侧的第1前端部133配置于第1电极122的俯视时的区域(自钝化膜114露出的区域)内,且以与第1接合部132一体地构成较金属线直径更薄的薄壁部的方式而形成。另外,在线弧130中的自第1电极112立起的部分形成有凹部49。凹部49如所述半导体装置的制造方法中所说明,是由接合工具40的插通孔41的开口端部抵接于金属线42而形成的工具痕所形成。
此处,比较例中的使用现有的方法所制造的半导体装置中,例如图8(B)所示,线弧中的第1电极222(第1接合点)侧的第1前端部233自第1电极222的俯视时的区域(自钝化膜114露出的区域)配置于外侧,虽通过金属线的切断而稍微变薄,但通过接合工具的加压而作为薄壁部构成的第1接合部232与第1前端部233之间未变薄地塑性变形,而包含具有金属线直径程度的大小的部分。
相对于此,本实施方式的半导体装置100a具备以上所说明的线弧130的构成,因此,未多余消耗金属线材料,且可避免金属线的前端部自第1接合点伸出而接触于其他电极或钝化膜,因此,可避免或抑制半导体芯片损伤或不良。因此,可提供对应于窄间距(例如锯齿状的衬垫排列)且可靠性高的半导体装置。
本发明并不限定于所述实施方式,可进行各种变形而应用。
例如,接合工具40向XYZ方向的移动并不限定于由所述实施方式的例子所示的构成,例如也可包括不仅描绘直线轨道且描绘曲线轨道的处理。另外,接合工具40的形状也不限定于图示者。
通过所述发明的实施方式所说明的实施例或应用例可根据用途而适当组合、或者加以变更或改良而使用,本发明并不限定于所述实施方式的记载。根据权利要求书的记载可知,所述组合而成或者加以变更或改良而成的实施方式也可包含在本发明的技术范围内。
Claims (5)
1.一种半导体装置的制造方法,所述半导体装置具有将第1接合点与第2接合点连接的线弧,所述半导体装置的制造方法包括:
第1接合步骤,将插通接合工具的金属线接合于所述第1接合点;
线弧形成步骤,一面将所述金属线抽出,一面使所述金属线形成线弧;
第2接合步骤,将所述金属线接合于所述第2接合点;
被切断部形成步骤,一面将所述金属线抽出,一面使所述接合工具上升并且自所述第2接合点向所述第1接合点侧的方向移动,而在自所述接合工具的前端延伸出的金属线中的所述第2接合点附近,形成弯曲的被切断部;
接合工具移动步骤,使所述接合工具下降,并且一面使所述接合工具的前端压抵于所述金属线,一面使所述接合工具移动至所述金属线的所述被切断部;
薄壁部形成步骤,使所述接合工具朝所述第2接合点向铅垂方向下降而进行加压,由此使所述金属线的所述被切断部变薄;
接合工具上升步骤,一面将所述金属线抽出,一面使所述接合工具上升;以及
线尾形成步骤,使所述接合工具沿远离所述第1接合点及所述第2接合点的方向且为将所述第1接合点与所述第2接合点连结的金属线方向移动,而将所述金属线在所述被切断部切断,由此在所述接合工具的前端形成线尾。
2.根据权利要求1所述的半导体装置的制造方法,其中在所述被切断部形成步骤中,使所述接合工具上升至第1高度,
在所述接合工具移动步骤中,使所述接合工具下降至较所述第1高度更低的第2高度,在所述第2高度,一面使所述接合工具的前端压抵于所述金属线,一面使所述接合工具移动至所述金属线的所述被切断部,
在所述薄壁部形成步骤中,对所述接合工具进行加压直至较所述第2高度更低的第3高度。
3.根据权利要求1所述的半导体装置的制造方法,其中在所述接合工具移动步骤中,使所述接合工具的前端压抵于所述金属线中的较所述第2接合点更靠所述第1接合点侧附近。
4.根据权利要求2所述的半导体装置的制造方法,其中在所述薄壁部形成步骤中,使所述接合工具一面维持于所述第3高度一面沿所述金属线方向移动。
5.一种打线装置,制造具有利用金属线将第1接合点与第2接合点连接的线弧的半导体装置,且包括:
接合臂,能够在接合区域内的XY平面以及Z方向自如地移动;
超声波焊头,安装于所述接合臂的前端;
接合工具,安装于所述超声波焊头的一端,将插通所述接合工具的内部的所述金属线按压至作为接合对象的所述第1接合点与所述第2接合点;以及
控制部,控制所述接合工具的动作;且
所述控制部构成为能够执行以下步骤:
一面将所述金属线抽出,一面使所述接合工具上升并且自所述第2接合点向所述第1接合点侧的方向移动,而在自所述接合工具的前端延伸出的金属线中的所述第2接合点附近,形成弯曲而成的被切断部的步骤;
使所述接合工具下降,并且一面使所述接合工具的前端压抵于所述金属线,一面使所述接合工具移动至所述金属线的所述被切断部的步骤;
对所述接合工具进行加压,由此使所述金属线的所述被切断部变薄的步骤;
一面将所述金属线抽出,一面使所述接合工具上升的步骤;以及
使所述接合工具向远离所述第2接合点的方向移动,而将所述金属线在所述被切断部切断,由此在所述接合工具的前端形成线尾的步骤。
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JP2005123388A (ja) * | 2003-10-16 | 2005-05-12 | Sony Corp | ボンディング構造及びボンディング方法、並びに半導体装置及びその製造方法 |
US20070246513A1 (en) * | 2006-04-24 | 2007-10-25 | Kabushiki Kaisha Shinkawa | Tail wire cutting method and bonding apparatus |
CN103534797A (zh) * | 2011-05-17 | 2014-01-22 | 株式会社新川 | 打线接合装置及接合方法 |
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US20160358880A1 (en) | 2016-12-08 |
JP6166458B2 (ja) | 2017-07-19 |
SG11201606865RA (en) | 2016-10-28 |
KR101867921B1 (ko) | 2018-06-18 |
KR20160121578A (ko) | 2016-10-19 |
TW201533877A (zh) | 2015-09-01 |
US9887174B2 (en) | 2018-02-06 |
WO2015125670A1 (ja) | 2015-08-27 |
TWI585927B (zh) | 2017-06-01 |
CN106165077A (zh) | 2016-11-23 |
JPWO2015125670A1 (ja) | 2017-03-30 |
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