CN102931106A - 引线接合装置及半导体装置的制造方法 - Google Patents

引线接合装置及半导体装置的制造方法 Download PDF

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CN102931106A
CN102931106A CN201210055038XA CN201210055038A CN102931106A CN 102931106 A CN102931106 A CN 102931106A CN 201210055038X A CN201210055038X A CN 201210055038XA CN 201210055038 A CN201210055038 A CN 201210055038A CN 102931106 A CN102931106 A CN 102931106A
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佐野雄一
武部直人
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Toshiba Corp
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Abstract

本发明提供在执行引线接合时降低环形高度的引线接合装置及半导体装置的制造方法。本实施方式的引线接合装置具有：细管；接合台；使前述细管相对于前述接合台相对移动的移动机构；以及对前述移动机构进行控制的控制部。前述控制部，对插通于细管的引线，通过前述细管向第1焊盘进行第一次接合，通过前述细管使前述引线接触于设置有第2焊盘的基板的上表面中接近于前述第2焊盘的部位并按压变形，由此形成接合用的连接部。然后，前述控制部控制前述移动机构，使得将前述引线的连接部接合于前述第2焊盘。

Description

引线接合装置及半导体装置的制造方法
相关申请
本申请享有以日本专利申请2011-173845号(申请日：2011年8月9日)为基础申请的优先权。本申请通过参照该基础申请而包含基础申请的全部内容。
技术领域
本发明的实施方式涉及引线接合装置及半导体装置的制造方法。
背景技术
已知下述结构：在电路基板上粘接半导体芯片，通过引线接合将设置于半导体芯片的上表面的电极焊盘与设置于电路基板的上表面的接合焊盘相连接。在该结构的情况下，在从细管向下方突出的引线的前端形成焊球，使该焊球抵接于半导体芯片的电极焊盘上，由此进行接合(第一接合)。接着，边从细管抽出引线，边使细管上升，进而使其向横方向移动而位于电路基板的接合焊盘的正上方，之后使其下降并使引线抵接于接合焊盘上，并且对该引线经由细管施加载荷和超声波，经由设置于电路基板侧的加热器加热，由此进行接合(第二接合)。
在上述结构的情况下，接合于半导体芯片的电极焊盘及电路基板的接合焊盘的引线的环形部分的形状成为大致山形。将该引线的环形部分的高度、即从半导体芯片的电极焊盘的上表面至上述环形部分的最高部分的高度定义为环形高度。近年，期望降低上述环形高度。
但是，在执行上述的引线接合的情况下，在第二接合时，在将要使引线抵接于电路基板的接合焊盘上而进行接合时，由于引线从细管稍微向下方悬垂，所以在抵接于电路基板的接合焊盘上之前上述悬垂的引线会接触电路基板的表面。通过该接触，存在着下述问题：由于会产生应力而使引线上跳，所以上述环形高度会变高。例如，在将环形高度设定为40～50μm左右的情况下，由于上述引线的上跳，环形高度会升高10％左右。
发明内容
因此，提供在执行引线接合时能够降低环形高度的引线接合装置及半导体装置的制造方法。
本实施方式的引线接合装置具有：细管；接合台；使前述细管相对于前述接合台相对移动的移动机构；以及对前述移动机构进行控制的控制部。前述控制部，对插通于细管的引线，通过前述细管向第1焊盘进行第一次接合，通过前述细管使前述引线接触于设置有第2焊盘的基板的上表面中接近于前述第2焊盘的部位并按压变形，由此形成接合用的连接部。然后，前述控制部控制前述移动机构，使得将前述引线的连接部接合于前述第2焊盘。
本实施方式的半导体装置的制造方法，对插通于细管的引线，通过前述细管向设置于电路基板的半导体芯片的电极焊盘进行第一次接合。然后，通过前述细管使前述引线接触于设置有接合焊盘的前述电路基板的上表面中接近于前述接合焊盘的部位并按压变形，由此形成接合用的连接部。进而，将前述引线的连接部接合于前述接合焊盘。
附图说明
图1是说明表示第1实施方式的引线接合方法的纵剖侧面图(其一)。
图2是说明引线接合方法的纵剖侧面图(其二)。
图3是说明引线接合方法的纵剖侧面图(其三)。
图4是表示使引线接触到了电路基板上的状态的放大纵剖侧面图。
图5是说明引线接合方法的纵剖侧面图(其四)。
图6是说明引线接合方法的纵剖侧面图(其五)。
图7是说明引线接合方法的纵剖侧面图(其六)。
图8是表示使引线接合到了接合焊盘上的状态的放大纵剖侧面图。
图9是说明引线接合方法的纵剖侧面图(其七)。
图10是表示引线接合装置的概略结构的图。
图11是表示变形实施方式的接合焊盘周边的俯视图。
图12是表示不同的变形实施方式的图，是说明引线接合方法的纵剖侧面图。
符号说明
1电路基板，2半导体芯片、接合焊盘，5电极焊盘，7细管，8引线，9焊球，10临时接触部分，11连接部，24臂驱动马达，25接合台，26XY移动机构，27控制部。
具体实施方式
以下，关于多个实施方式参照附图进行说明。而且，在各实施方式中，对实质相同的构成部位赋予同一符号，并省略说明。但是，附图是示意性的图，厚度与平面尺寸的关系、各层的厚度的比率等与现实的情况不同。
(第1实施方式)
关于本实施方式的引线接合装置，参照图1～图10进行说明。
首先，关于引线接合装置的结构，参照图10进行说明。引线接合装置21具备：可以插通引线8的细管7、保持细管7的接合头22、经由接合头22使细管7超声波振动的超声波辐射器23、经由接合臂22a使接合头22旋转而使细管7在垂直方向(Z轴方向)移动的臂驱动马达24、载置接合对象电路基板1的接合台25、使接合头22在水平方向(XY轴方向)移动的XY移动机构26和对引线接合装置21统括地进行控制的控制部27。
超声波辐射器23具有产生超声波振动的振动子23a。接合台25具有用于对电路基板1加热而将电路基板1的温度设定为期望温度的加热器(未图示)。XY移动机构26具有使接合头22在X轴方向移动的X轴线性马达26a、使接合头22在Y轴方向移动的Y轴线性马达26b。在此情况下，接合臂22a(臂驱动马达24)及XY移动机构26构成移动机构。
控制部27对超声波辐射器23、臂驱动马达24、XY移动机构26、接合台25的加热器进行控制而进行引线接合。控制部27设置有接受来自操作者的各种控制信息的输入的输入部28、显示控制部27的各种控制信息的输出部29、存储各种程序的存储器30、进行接合控制的CPU31。CPU31执行从存储器30读取的程序，经由超声波辐射器I/F32、臂驱动马达I/F33、X轴线性马达I/F34、Y轴线性马达I/F35及加热器I/F36控制超声波辐射器23、臂驱动马达24、X轴线性马达26a、Y轴线性马达26b及接合台25的加热器的各工作。后述的接合方法通过控制接合装置21的加工点而实现，该接合装置21包含通过该程序控制的细管7。
如图1所示，在电路基板1的上表面，经由半导体芯片安装用粘接剂3粘接有半导体芯片2，并且设置有接合焊盘(第2焊盘)4。在半导体芯片2的上表面，设置有电极焊盘(第1焊盘)5。在半导体芯片2的上表面设置有保护绝缘膜15。保护绝缘膜15例如使用聚酰亚胺。在保护绝缘膜15，以露出电极焊盘5的方式设置有开口部。电极焊盘5例如使用Al与Cu的合金或Al与Si、Cu的合金。电极焊盘5的上表面的高度构成为比保护绝缘膜15的上表面的高度低。
此外，电路基板1例如使用玻璃环氧基板。电路基板1的上表面之中除了接合焊盘4之外的部分，由抗蚀剂膜6覆盖。接合焊盘4例如使用Cu，在其表面例如形成有Au的薄膜。此外，接合焊盘4的上表面的高度构成为比抗蚀剂膜6的上表面的高度低。
在细管7，插通有例如包含金线等的引线8。在细管7的上方，设置有箝位器(未图示)，该箝位器切换将引线8设为可以自由抽出的状态(打开状态)和阻止引线8的抽出的状态(关闭状态)。箝位器的开闭工作构成为通过前述控制部27进行控制。细管7由前述接合头22支持，如前所述，其设置为可以在上下方向(Z轴方向)移动，并且设置为可以在水平方向(XY轴方向)移动。
此外，在引线接合装置21，具备产生火花放电的火花放电产生装置(未图示)，该火花放电用于在从细管7的下端部向下方突出的引线8的前端部形成接合用的焊球9。火花放电产生装置构成为通过前述控制部27进行驱动控制。
接着，关于通过上述结构的引线接合装置21将半导体芯片2的上表面的电极焊盘5与电路基板1的上表面的接合焊盘4引线接合而连接的方法(工序)进行说明。
首先，如图1所示，在半导体芯片2的电极焊盘5上用公知的方法对引线8进行第一次接合(第一接合)。在此情况下，例如在关闭了箝位器的状态下，在从细管7的下端部延伸的引线8的前端部通过火花放电形成焊球9，接着在打开了箝位器的状态下，使细管7向电极焊盘5的上方移动，之后使其下降，将上述焊球9接合于电极焊盘5上。在该接合时，经由电路基板1加热。
此后，如图1所示，在打开了箝位器的状态下，使细管7上升，之后使其移动至使细管7临时接触并按压的临时接触部分10的上方(正上方)，该临时接触部分10是电路基板1的上表面中接近于接合焊盘4的部分。接着，如图2及图3所示，在打开了箝位器的状态下，使细管7下降而使引线8接触(抵接)并按压于上述临时接触部分10上。在该接触时，经由细管7施加按压力，经由电路基板1加热。由此，如图4所示，通过细管7的下端部的细管端面部7a将引线8加压变形而形成连接部11。在此情况下，通过在细管7的细管端面部7a与电路基板1(抗蚀剂膜6)的上表面之间夹着引线8并使其按压变形，来形成连接部11。
接着，如图5所示，在打开了箝位器的状态下，使细管上升，之后如图6所示，在打开了箝位器的状态下，使细管7水平移动至接合焊盘4的上方(正上方)。接着，如图7所示，在打开了箝位器的状态下，使细管7下降，使其抵接并按压于上述接合焊盘4上。在该抵接时，将箝位器设为打开状态，并经由细管7施加按压力及超声波、经由电路基板1加热。由此，如图8所示，通过细管7的下端部的细管端面部7a将引线8的连接部11接合于接合焊盘4上，即进行第二次接合(第二接合)。此后，在关闭了箝位器的状态下，若使细管7上升，则如图9所示，引线8在接合到了接合焊盘4的连接部11部分(薄壁部分)处被切断。
根据上述结构的本实施方式，在引线接合于电路基板1的接合焊盘4上之前，通过细管7使引线8接合于电路基板1的临时接触部分10上并按压变形，从而形成引线8的连接部11。在此情况下，在形成上述连接部11时，由于如图1及图2所示，引线8从细管7稍微向下方悬垂，所以在接触于电路基板1的临时接触部分10上之前上述悬垂的引线8会接触电路基板1的表面。通过该接触，由于产生应力而使引线8上跳，所以引线8的环形高度h会变高(参照图3)。
此后，为了引线接合于电路基板1的接合焊盘4上，如图5、图6、图7所示，使细管7上升，移动至接合焊盘4的上方(正上方)，进而使其下降而使引线8的连接部11抵接并按压于上述接合焊盘4上，将连接部11接合于接合焊盘4。在此情况下，由于在引线8的连接部11抵接到了细管7的细管端面部7a的状态下，细管7如上所述进行移动，所以引线8被拉伸从而引线8的环形高度h降低。
进而，在将引线8的连接部11接合于接合焊盘4时，由于处于引线8的连接部11抵接于细管7的细管端面部7a的状态，引线8不从细管7的下端部悬垂，所以引线8不会接触于电路基板1的表面。因此，难以产生应力，引线8上跳减小，所以能够将引线8的环形高度h保持为较低的状态(参照图7)。例如，在将引线8的环形高度设定为40～50μm左右的情况下，由于引线8的上跳减小，所以可以将环形高度基本正确地设定为上述40～50μm左右。
此外，在上述实施方式的情况下，通过细管7使引线8临时接触于电路基板1的上表面的位置、即临时接触部分10的位置，如图1～图3所示，是接近于接合焊盘4且半导体芯片2的电极焊盘5侧(图3中的左方)的部位，但是并不限于该部位。
例如，在表示变形实施方式的图11中，只要在比电路基板1的接合焊盘4的右端更靠右侧(即半导体芯片2的电极焊盘5侧)的区域，具体地，在图11中的比一点划线P更靠右侧的区域，配置上述临时接触部分10即可。优选地，可以在比上述一点划线P更靠右侧的区域(由箭头表示的范围的区域)中接近于接合焊盘4的部位，配置上述临时接触部分10。
(其他实施方式)
除了以上说明的多个实施方式之外，还可以采用以下的结构。
在上述实施方式中，通过细管7使引线8接触于电路基板1的临时接触部分10上并按压变形，形成引线8的连接部11，之后也保持打开箝位器的状态而使细管7上升、移动及下降、进行按压，但是也可以代替之，而在形成了引线8的连接部11之后，关闭箝位器，在关闭了箝位器的状态下，使细管7上升、移动及下降、进行按压。若这样构成，则在细管7的移动时不会进行引线8的送出，所以能够进一步确实地降低引线8的环形高度h。
此外，在上述实施方式中，在将引线8第二接合于电路基板1的接合焊盘4上时，在该接合之前，使细管7下降而使引线8接触并按压于电路基板1的临时接触部分10上。也可以代替之，而在将引线8第二接合于半导体芯片2的电极焊盘5上时，执行上述引线8的临时接触。具体地，在将引线8第一接合于电路基板1的接合焊盘4上之后，将引线8第二接合于半导体芯片2的电极焊盘5上之前，通过细管7使引线8接触(抵接)于半导体芯片2的上表面的保护绝缘膜15中接近于电极焊盘5的部分、即临时接触部分上并按压变形。由此，通过细管7的细管端面部7a将引线8加压变形而形成连接部。此后，将该引线8的连接部接合于半导体芯片2的电极焊盘5上。根据该结构，由于不会产生因应力引起的引线8的上跳，所以可以稳定地设定较低的环形高度。
此外，在将引线8第二接合于半导体芯片2的电极焊盘5上时，除了将引线8直接第二接合于电极焊盘5上之外，也可以如表示变形实施方式的图12所示，经由设置于电极焊盘5上的凸块37进行第二接合。
虽然说明了本发明的几个实施方式，但是这些实施方式是作为例子而提示的，而并非意在限定发明的范围。这些新颖的实施方式可以通过其他各种方式实施，在不脱离发明的主旨的范围内，能够进行各种省略、置换、改变。这些实施方式和/或其变形，包含于发明的范围和/或主旨中，并且包含于权利要求所记载的发明及其均等的范围内。

Claims (7)

1.一种引线接合装置，其特征在于，具有：
细管；保持细管的接合头；接合台；使前述细管相对于前述接合台相对移动的移动机构；使前述细管超声波振动的超声波辐射器；箝位器，其设置为可以开闭，并且在打开的状态下使得能够进行插通于前述细管的引线的送出，在关闭的状态下使得不能够进行前述引线的送出；对前述移动机构、前述超声波辐射器及前述箝位器进行控制的控制部；
其中，前述控制部：
对插通于前述细管的引线，通过前述细管向第1焊盘进行第一次接合，
通过前述细管使前述引线接触于设置有第2焊盘的基板的上表面中接近于前述第2焊盘的部位并按压变形，由此形成接合用的连接部，
对前述移动机构进行控制，使得将前述引线的连接部接合于前述第2焊盘；
前述控制部控制前述移动机构，使得在形成前述引线的连接部时，在前述细管的下端部的细管端面部与前述基板的上表面之间夹着前述引线并使其按压变形；进而
前述控制部控制前述移动机构和前述箝位器，使得在形成前述接合用的连接部时，将前述箝位器设为打开状态而进行，此后将前述箝位器设为关闭状态而使前述细管上升并使前述细管移动至前述第2焊盘的上方，并使前述细管下降而使前述引线的连接部抵接于前述第2焊盘，然后将前述引线的连接部接合于前述第2焊盘。
2.一种引线接合装置，其特征在于，具有：
细管；接合台；使前述细管相对于前述接合台相对移动的移动机构；以及对前述移动机构进行控制的控制部；
其中，前述控制部：
对插通于细管的引线，通过前述细管向第1焊盘进行第一次接合，
通过前述细管使前述引线接触于设置有第2焊盘的基板的上表面中接近于前述第2焊盘的部位并按压变形，由此形成接合用的连接部，
控制前述移动机构，使得将前述引线的连接部接合于前述第2焊盘。
3.根据权利要求2所述的引线接合装置，其特征在于，
前述控制部对前述移动机构进行控制，使得在形成前述引线的连接部时，在前述细管的下端部的细管端面部与前述基板的上表面之间夹着前述引线并使其按压变形。
4.根据权利要求2或3所述的引线接合装置，其特征在于，具备：
箝位器，其设置为可以开闭，并且在打开的状态下使得能够进行插通于前述细管的前述引线的送出，在关闭的状态下使得不能够进行前述引线的送出；
其中，前述控制部控制前述移动机构和前述箝位器，使得在形成前述接合用的连接部时，将前述箝位器设为打开状态而进行，此后保持前述箝位器打开的状态而使前述细管上升并使前述细管移动至前述第2焊盘的上方，并使前述细管下降而使前述引线的连接部抵接于前述第2焊盘，然后将前述引线的连接部接合于前述第2焊盘，之后将前述箝位器设为关闭状态。
5.根据权利要求2或3所述的引线接合装置，其特征在于，具备：
箝位器，其设置为可以开闭，并且在打开的状态下使得能够进行插通于前述细管的前述引线的送出，在关闭的状态下使得不能够进行前述引线的送出；
其中，前述控制部控制前述移动机构和前述箝位器，使得在形成前述接合用的连接部时，将前述箝位器设为打开状态而进行，此后将前述箝位器设为关闭状态而使前述细管上升并使前述细管移动至前述第2焊盘的上方，并使前述细管下降而使前述引线的连接部抵接于前述第2焊盘，然后将前述引线的连接部接合于前述第2焊盘。
6.一种引线接合装置，其特征在于，具有：
细管；接合台；使前述细管相对于前述接合台相对移动的移动机构；以及对前述移动机构进行控制的控制部；
其中，前述控制部：
对插通于细管的引线，通过前述细管向第1焊盘进行第一次接合，
通过前述细管使前述引线接触于设置有第2焊盘的半导体芯片的上表面中接近于前述第2焊盘的部位并按压变形，由此形成接合用的连接部，
控制前述移动机构，使得将前述引线的连接部接合于前述第2焊盘或设置于前述第2焊盘上的凸块。
7.一种半导体装置的制造方法，其特征在于，包括：
对插通于细管的引线，通过前述细管向设置于电路基板的半导体芯片的电极焊盘进行第一次接合；
通过前述细管使前述引线接触于设置有接合焊盘的前述电路基板的上表面中接近于前述接合焊盘的部位并按压变形，由此形成接合用的连接部；以及
将前述引线的连接部接合于前述接合焊盘。
CN201210055038XA 2011-08-09 2012-03-05 引线接合装置及半导体装置的制造方法 Pending CN102931106A (zh)

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JP2011108993A (ja) * 2009-11-20 2011-06-02 Renesas Electronics Corp 半導体装置及びその製造方法

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CN104934337A (zh) * 2014-03-17 2015-09-23 矽品精密工业股份有限公司 焊线形成方法及其焊线设备
CN114759004A (zh) * 2021-01-08 2022-07-15 三菱电机株式会社 半导体装置及半导体装置的制造方法

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