CN101527287A - 打线结构及其制作方法 - Google Patents
打线结构及其制作方法 Download PDFInfo
- Publication number
- CN101527287A CN101527287A CN200910133707A CN200910133707A CN101527287A CN 101527287 A CN101527287 A CN 101527287A CN 200910133707 A CN200910133707 A CN 200910133707A CN 200910133707 A CN200910133707 A CN 200910133707A CN 101527287 A CN101527287 A CN 101527287A
- Authority
- CN
- China
- Prior art keywords
- projection
- chip
- soldered ball
- bond structure
- wire bond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/45111—Tin (Sn) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4845—Details of ball bonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
- H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
- H01L2224/48479—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
- H01L2224/48481—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a ball bond, i.e. ball on pre-ball
- H01L2224/48482—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a ball bond, i.e. ball on pre-ball on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
- H01L2224/48484—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) being a plurality of pre-balls disposed side-to-side
- H01L2224/48485—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) being a plurality of pre-balls disposed side-to-side the connecting portion being a wedge bond, i.e. wedge on pre-ball
- H01L2224/48486—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) being a plurality of pre-balls disposed side-to-side the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48499—Material of the auxiliary connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/85051—Forming additional members, e.g. for "wedge-on-ball", "ball-on-wedge", "ball-on-ball" connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85986—Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06506—Wire or wire-like electrical connections between devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
本发明涉及一种打线结构,尤其涉及半导体元件的打线结构及其制作方法,主要包括有一芯片,且该芯片透过一导电线与一导电部相连接,其中芯片的主动表面上设置有至少一焊垫,并于焊垫上设置有一凸块,且该凸块的组成材料包括金,此外,凸块上还设置有一焊球,借由焊垫及凸块的设置可将焊球及芯片进行隔离,并避免在打线过程当中所产生的高温对芯片造成损害。
Description
技术领域
本发明涉及一种打线结构,尤其涉及半导体元件的打线结构及其制作方法,可有效避免在打线过程当中所产生的高温对芯片造成损害。
背景技术
图1所示为现有的打线结构的侧视图。传统的打线结构10包括有一基板11及一芯片13,其中芯片13设置于基板11的上表面,且芯片13包括有一主动表面131及一背面133。芯片13的主动表面131上设置有一焊垫15,并透过一焊球171及一导电线173进行焊垫15与一导电部19的连接。
在打线结构10的制作过程中,芯片13设置在基板11的上表面,并透过粘合层12进行连接,例如,芯片13的背面133透过粘合层12与基板11的上表面相连接。此外,亦可以透过焊针18于焊垫15上形成焊球171,并以焊针形成导电线173以连接焊球171及导电部19。
一般而言,焊球171及导电线173两者都是由铜制成的,借此将有利于降低打线结构10的制作成本。然而,在焊球171及导电线173的设置过程中,将有可能会对芯片13或焊垫15的结构造成影响,例如,当焊球171及导电线173是由铜所构成时,在焊垫15上设置焊球171时将会产生高温,且高温会经由焊垫15传递至芯片13,使得芯片13或焊垫15遭到损害,并进一步造成打线结构10的良率下降。
发明内容
本发明的主要目的,在于提供一种打线结构,其中焊垫及焊球之间增设有一凸块,使得焊球不会与芯片及/或焊垫直接接触,借此将可有效避免在打线的制造过程中对芯片及/或焊垫造成损害。
本发明的次要目的,在于提供一种打线结构,其中凸块是由金所制成,由于金的硬度远低于铜、锡或铝等材质,因此可有效避免芯片的构造或功能在打线的制造过程中造成损害。
本发明的又一目的,在于提供一种打线结构,其中凸块设置在焊垫及焊球之间,借此将可以增加焊球与焊垫之间的间距,而有利于提高打线结构的产品良率。
本发明的又一目的,在于提供一种打线结构的制作方法,其主要是透过焊针进行焊球及导电线的设置,并有利于打线的加工效率的提升。
本发明的又一目的,在于提供一种打线结构的制作方法,其主要是在焊垫上形成金制成的凸块,之后再于凸块上形成焊球及导电线,借此将可避免焊球直接与焊垫接触。
为达成上述目的,本发明提供一种打线结构,包括有:一芯片,包括有一第一表面及一第二表面;一焊垫,设置于芯片的第一表面上;一凸块,设置于焊垫上,且凸块内包括金;一焊球,设置在凸块上;及一导电线,用以连接焊球及一导电部。
本发明还提供一种打线结构,包括有:至少一第一焊垫,设置于一第一芯片上;至少一第二焊垫,设置于一第二芯片上;一第一凸块,设置于第一焊垫上;一第二凸块,设置于第二焊垫上,且第一凸块及第二凸块内都包括金;一焊球,设置于第一凸块上;及一导电线,用以连接焊球及第二凸块。
本发明还提供一种打线结构的制作方法,其中打线结构包括有一芯片,而芯片上设置有一焊垫,并包括有以下步骤:于焊垫上形成一凸块,且凸块内包括金;于凸块上形成一焊球;及形成一导电线,并以导电线连该焊球及一导电架。
附图说明
图1为现有的打线结构的侧视图;
图2为本发明打线结构一较佳实施例的侧视图;
图3A至图3C分别为本发明打线结构一实施例的制作方法流程图;
图4为本发明打线结构又一实施例的侧视图;
图5为本发明打线结构又一实施例的侧视图;
图6为本发明打线结构又一实施例的侧视图;
图7A至图7D分别为本发明打线结构又一实施例的制作方法流程图;
图8为本发明打线结构又一实施例的侧视图。
附图标记说明:10-打线结构;11-基板;12-粘合层;13-芯片;131-主动表面;133-背面;15-焊垫;171-焊球;173-导电线;18-焊针;19-导电部;20-打线结构;200-打线结构;21-基板;22-粘合层;23-芯片;231-第一表面;233-第二表面;25-焊垫;26-凸块;27-导线;271-焊球;273-导电线;281-焊针;283-焊针;29-导电部;30-打线结构;331-第一芯片;333-第二芯片;351-第一焊垫;353-第二焊垫;361-第一凸块;363-第二凸块;365-凸块;37-导线;371-焊球;373-导电线;381-焊针;383-焊针;40-打线结构;411-基板;413-导电架;43-芯片;431-第一表面;433-第二表面;45-焊垫;46-凸块;471-焊球;473-导电线;49-导电部。
具体实施方式
以下结合附图,对本发明上述的和另外的技术特征和优点作更详细的说明。
图2为本发明打线结构一较佳实施例的侧视图。如图所示,打线结构20包括有一芯片23,该芯片23主要是透过导电线273与导电部29相连接。此外,芯片23包括有一第一表面231及一第二表面233,其中第一表面231可为主动表面,而第二表面233则是背面。
芯片23的第一表面231上设置有至少一焊垫25,并于焊垫25上设置有一凸块26,其中凸块26内包括金或是由金所制成。凸块26上设置有一焊球271,并可透过一导电线273进行导电部29及焊球271的连接。
在本发明另一实施例中焊球271及导电线273可由相同材质所制成,例如铜、锡或铝等。由于凸块26内包括金,且金的硬度远低于铜、锡及铝等材质,借此在设置凸块26的过程中将不会对焊垫25及/或芯片23造成损害。由于焊球271是设置在凸块26的上方,且不会与焊垫25及/或芯片23接触,因此在将焊球271及导电线273设置在凸块26的过程中,将不会如现有构造一般对芯片23及/或焊垫25的结构及功能造成影响。
图3A至图3C分别为本发明打线结构一实施例的制作方法流程图。如图所示,芯片23的第一表面231上设置有一焊垫25,并于焊垫25上设置有一凸块26,其中凸块26可以金属扩散的超音波振动技术(ultrasonic vibration of metaldiffusion technology)进行设置。例如可透过焊针281在焊垫25上设置凸块26,且凸块26的材质包括金或是由金所组成,如图3A所示。在不同实施例中也可以电镀的方式将凸块26设置在焊垫25上。
之后可透过焊针283在凸块26上设置焊球271,如第3B图所示。例如焊针283内设置有一导线27,并使得导线27穿过焊针283。导线27的其中一端凸出于焊针283,并可以氢焰(hydrogen torch)或放电(electrical discharge)等方式加热凸出焊针283的导线27并使的熔化。焊针283可用以对熔化的导线27施加压力,使得熔化的导线27压迫凸块26,并在凸块26上形成焊球271。
焊针283也可用来形成导电线273,并以导电线273连接焊球271及导电部29,如图3C所示。例如在凸块26上形成焊球271后,可将焊针283由凸块26移动至导电部29,并以导线27对导电部29施加压力,使得导线27与导电部29相连接,借此将可以在凸块26及导电部29之间形成一导电线273。在本发明实施例中,导线27可以是铜线、锡线或铝线等,则焊球271与导电线273是由铜、锡或铝等材料所制成。
在打线的过程中还可以对芯片23、焊垫25及导电部29进行加热而有利于熔化导线27。焊针283可包括有一超音波振动单元,并可以透过超音波振动单元形成焊球271及导电线273。此外也可将金属扩散技术(metal diffusiontechnology)应用在焊针283上,以完成焊球271及导电线273的设置。
凸块26内部包括金或由金所制成,由于金的硬度远低于铜、锡或铝等材质,并可避免在将凸块26设置在焊垫25的过程中对芯片23及/或焊垫25造成影响。此外,设置在焊垫25上的凸块26还可以具有缓冲的功用,使得焊球271不会与芯片23及/或焊垫25直接接触,并可以保护芯片23及/或焊垫25,同时可避免制造过程中的高温对芯片23及/或焊垫25造成损坏。
在本发明另一实施例中,也可将芯片23设置在基板21的上表面。例如可使得芯片23的第二表面233经由粘合层22与基板21的上表面连接,而导电部29则可以设置在同一个基板21或不同的基板上。此外,本发明所述的基板21还可以是导电架(leadframe),并将芯片23及/或导电部29设置在导电架上。
图4为本发明打线结构又一实施例的侧视图。如图所示,打线结构200包括有一芯片23及一基板21,其中芯片23可以透过粘合层22与基板21相连接。此外芯片23包括有一第一表面231及一第二表面233,第一表面231可以是主动表面,第二表面233则是背面。
导电部29可以设置在基板21上,而焊垫25则设置在芯片23的第一表面231。凸决26包括金或是由金所制成,并设置在焊垫25上,此外亦可于凸块26上形成一焊球271,并以一导电线273完成焊球271与导电部29的连接。
图5为本发明打线结构又一实施例的侧视图。如图所示,打线结构30包括有一相连接的第一芯片331及第二芯片333。并于第一芯片331上设置有至少一第一焊垫351,而第二芯片333上则设置有至少一第二焊垫353。
第一焊垫351及第二焊垫353上分别设置有一第一凸块361及一第二凸块363,其中第一凸块361及第二凸块363都包括金或是由金所制成。第二凸块363上设置有一凸块365,而第一凸块361上则设置有一焊球371,并透过一导电线373进行焊球371及凸块365之间的连接,其中焊球371及凸块365都由铜、锡或铝所制成。
在本发明不同实施例中,设置在第二凸块363上的凸块365可以省略,借此焊球371将会透过导电线373直接与第二凸块363进行连接,如图6所示。
图7A至图7D分别为本发明打线结构又一实施例的制作方法流程图。如图所示,第一焊垫351及第二焊垫353分别设置在第一芯片331及第二芯片333上。之后可以透过焊针381于第一焊垫351上形成第一凸块361,并于第二焊垫353上形成第二凸块363,其中第一凸块363及第二凸块363都包括金或是由金所制成,如图7A所示。
在完成第一凸块361及第二凸块363的设置后,可再以焊针383于第二凸块363上形成凸块365,如图7B所示。此外焊针383也可用来在第一凸块361上形成焊球371,其中凸块365及焊球371都可由铜、锡或铝所制成,如图7C所示。
在于第一凸块361上完成焊球371的设置后,可将焊针383由第一凸块361移动至凸块365。其中焊针383内设置有导线37,并可以焊针383将导线37相对于凸块365施加压力,使得导线37与凸块365相连接,借此在第一芯片331及第二芯片333之间形成导电线373,如图7D所示。此外,导线37可为铜线、锡线或铝线等,而焊球371、导电线373及/或凸块365是由铜、锡或铝等材料所制成。
图8为本发明打线结构又一实施例的侧视图。如图所示,打线结构40包括有一与导电部49相连接的芯片43,其中芯片43可以被设置在基板411上,而导电部49则被设置在导电架413上。芯片43包括有一第一表面431及一第二表面433,且第一表面431为主动表面,第二表面433则为背面。
芯片43的第一表面431上设置有至少一焊垫45,并于焊垫45上设置有一凸块46,且凸块46包括金或是由金所制成。凸块46上尚设置有一焊球471,并可透过一导电线473进行导电部49及焊球471之间的连接。
以上所述仅为本发明的较佳实施例,对本发明而言仅仅是说明性的,而非限制性的。本专业技术人员理解,在本发明权利要求所限定的精神和范围内可对其进行许多改变,修改,甚至等效,但都将落入本发明的保护范围内。
Claims (18)
1.一种打线结构,其特征在于包括有:
一芯片,包括有一第一表面及一第二表面;
一焊垫,设置于该芯片的第一表面上;
一凸块,设置于所述焊垫上,且所述凸块内包括金;
一焊球,设置在所述凸块上;及
一导电线,用以连接所述焊球及一导电部。
2.如权利要求1所述的打线结构,其特征在于包括有一基板用以连接该芯片的第二表面。
3.如权利要求1所述的打线结构,其特征在于所述焊球及所述导电线是由相同的材质所制成。
4.如权利要求3所述的打线结构,其特征在于所述焊球及所述导电线的材质为铜、锡或铝。
5.如权利要求1所述的打线结构,其特征在于所述焊球及所述导电线是透过一焊针所形成。
6.如权利要求1所述的打线结构,其特征在于所述芯片的第一表面为一主动表面。
7.一种打线结构,包括有:
至少一第一焊垫,设置于一第一芯片上;
至少一第二焊垫,设置于一第二芯片上;
一第一凸块,设置于所述第一焊垫上;
一第二凸块,设置于所述第二焊垫上,且所述第一凸块及所述第二凸块内都包括金;
一焊球,设置于所述第一凸块上;及
一导电线,用以连接所述焊球及所述第二凸块。
8.如权利要求7所述的打线结构,其特征在于包括有一凸块设置于所述第二凸块上,且所述导电线透过所述凸块与所述第二凸块相连接。
9.如权利要求7所述的打线结构,其特征在于所述焊球及所述导电线是由相同的材质所制成。
10.如权利要求9所述的打线结构,其特征在于所述焊球及所述导电线的材质为铜、锡或铝。
11.如权利要求7所述的打线结构,其特征在于所述焊球及所述导电线是透过一焊针所形成。
12.一种打线结构的制作方法,其特征在于所述打线结构包括有一芯片,而所述芯片上设置有一焊垫,并包括有以下步骤:
于所述焊垫上形成一凸块,且所述凸块内包括金;
于所述凸块上形成一焊球;及
形成一导电线,并以所述导电线连接所述焊球及一导电架。
13.如权利要求12所述的制作方法,其特征在于包括有以下步骤:以一焊针形成所述焊球及所述导电线。
14.如权利要求12所述的制作方法,其特征在于所述焊球及所述导电线的材质为铜、锡或铝。
15.如权利要求12所述的制作方法,其特征在于所述凸块是以电镀的方式形成。
16.如权利要求12所述的制作方法,其特征在于所述凸块是以一焊针并透过金属扩散的方式形成。
17.一种打线结构,包括有:
一基板;
一导电部,设置于所述基板上;
一芯片,设置于所述基板上,且所述芯片包括有一第一表面及一第二表面;
一焊垫,设置于所述芯片的第一表面上;
一凸块,设置于所述焊垫上,且所述凸块内包括金;
一焊球,设置于所述凸块上;及
一导电线,用以连接所述导电部及所述焊球。
18.如权利要求17所述的打线结构,其特征在于包括有一粘合层设置于所述基板及所述芯片之间。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US9829208P | 2008-09-19 | 2008-09-19 | |
US61/098,292 | 2008-09-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101527287A true CN101527287A (zh) | 2009-09-09 |
Family
ID=41095073
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910133707A Pending CN101527287A (zh) | 2008-09-19 | 2009-04-01 | 打线结构及其制作方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7859123B2 (zh) |
CN (1) | CN101527287A (zh) |
TW (1) | TWI497657B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102725836A (zh) * | 2010-01-27 | 2012-10-10 | 住友电木株式会社 | 半导体装置 |
CN102097343B (zh) * | 2009-12-15 | 2014-04-30 | 日月光封装测试(上海)有限公司 | 铜线与载板焊垫的打线方法及其结构 |
CN111276405A (zh) * | 2018-12-04 | 2020-06-12 | 上海新微技术研发中心有限公司 | 芯片封装方法及芯片封装设备 |
CN113257714A (zh) * | 2021-05-12 | 2021-08-13 | 广州飞虹微电子有限公司 | 用于芯片焊接的铜铝混焊方法及设备 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5497392B2 (ja) * | 2009-09-25 | 2014-05-21 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
DE102017114771B4 (de) * | 2017-06-29 | 2022-01-27 | Pac Tech - Packaging Technologies Gmbh | Verfahren und Vorrichtung zur Herstellung einer Drahtverbindung sowie Bauelementanordnung mit Drahtverbindung |
KR102460014B1 (ko) | 2018-08-24 | 2022-10-26 | 삼성전자주식회사 | 반도체 패키지 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2273543A3 (en) * | 2001-12-14 | 2011-10-26 | STMicroelectronics S.r.l. | Semiconductor electronic device and method of manufacturing thereof |
JP2005259915A (ja) * | 2004-03-10 | 2005-09-22 | Nec Electronics Corp | 半導体装置およびその製造方法 |
JP2008034567A (ja) * | 2006-07-27 | 2008-02-14 | Fujitsu Ltd | 半導体装置及びその製造方法 |
-
2009
- 2009-01-23 US US12/358,604 patent/US7859123B2/en active Active
- 2009-03-13 TW TW098108118A patent/TWI497657B/zh active
- 2009-04-01 CN CN200910133707A patent/CN101527287A/zh active Pending
-
2010
- 2010-08-09 US US12/852,677 patent/US20100295180A1/en not_active Abandoned
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102097343B (zh) * | 2009-12-15 | 2014-04-30 | 日月光封装测试(上海)有限公司 | 铜线与载板焊垫的打线方法及其结构 |
CN102725836A (zh) * | 2010-01-27 | 2012-10-10 | 住友电木株式会社 | 半导体装置 |
CN111276405A (zh) * | 2018-12-04 | 2020-06-12 | 上海新微技术研发中心有限公司 | 芯片封装方法及芯片封装设备 |
CN113257714A (zh) * | 2021-05-12 | 2021-08-13 | 广州飞虹微电子有限公司 | 用于芯片焊接的铜铝混焊方法及设备 |
Also Published As
Publication number | Publication date |
---|---|
TW201013867A (en) | 2010-04-01 |
US20100295180A1 (en) | 2010-11-25 |
TWI497657B (zh) | 2015-08-21 |
US20100072619A1 (en) | 2010-03-25 |
US7859123B2 (en) | 2010-12-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1199269C (zh) | 半导体装置及其制造方法和制造装置 | |
CN101527287A (zh) | 打线结构及其制作方法 | |
CN102969306B (zh) | 电源模块及其制造方法 | |
CN100431142C (zh) | 半导体装置及其制造方法 | |
US20070141755A1 (en) | Ribbon bonding in an electronic package | |
CN101939832A (zh) | 热机械的倒焊芯片的模片焊接 | |
JP2003273289A (ja) | セラミックス回路基板およびパワーモジュール | |
CN101924046A (zh) | 在半导体器件中形成引线键合的方法 | |
JP2012059782A (ja) | 樹脂封止型半導体装置及びその製造方法 | |
CN100375278C (zh) | 半导体器件及其制造方法 | |
CN101877337A (zh) | 半导体装置及其制造方法 | |
CN101887872A (zh) | 半导体芯片的散热封装构造 | |
US20100181675A1 (en) | Semiconductor package with wedge bonded chip | |
EP1367644A1 (en) | Semiconductor electronic device and method of manufacturing thereof | |
CN103633050A (zh) | 芯片、芯片封装结构及芯片焊接的方法 | |
US8916970B2 (en) | Method for welding gold-silicon eutectic chip, and transistor | |
CN108110459B (zh) | 一种大功率ipm模块端子连接结构 | |
EP2768015A1 (en) | Gold/silicon eutectic chip soldering method and transistor | |
CN102142421B (zh) | 免用焊料的金属柱芯片连接构造 | |
JP2007088220A (ja) | 半導体装置の製造方法 | |
US20110241026A1 (en) | Light-emitting diode chip and package structure thereof | |
CN206921811U (zh) | 镀金钯铜线封装硅麦电路键合线的结构 | |
KR102525683B1 (ko) | 클립 구조체 및 그 클립 구조체를 포함하는 반도체 패키지 | |
CN102456656A (zh) | 芯片封装结构 | |
JP2007324211A (ja) | バンプ状接続部材の形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C12 | Rejection of a patent application after its publication | ||
RJ01 | Rejection of invention patent application after publication |
Open date: 20090909 |