CN206921811U - 镀金钯铜线封装硅麦电路键合线的结构 - Google Patents
镀金钯铜线封装硅麦电路键合线的结构 Download PDFInfo
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Abstract
本实用新型公开了一种镀金钯铜线封装硅麦电路键合线的结构,该结构包括PCB板、多个硅麦电路芯片和多条镀金钯铜线,所述多个硅麦电路芯片均通过对应的固晶胶固定在PCB板上,每条镀金钯铜线均包括铜芯和敷设在铜芯外表面的钯金层;每个硅麦电路芯片上均设置有芯片焊点,且PCB板上设置有引脚焊点,芯片焊点之间通过镀金钯铜线相焊接,且芯片焊点与镀金钯铜线的焊接处形成硅‑铝‑钯金‑铜金属化互连结构,芯片焊点与引脚焊点之间通过镀金钯铜线相焊接,且引脚焊点与镀金钯铜线的焊接处形成铜‑镍‑金‑钯金‑铜金属化互连结构。本实用新型镀金钯铜线可作为内引线取代硅麦电路封装中传统的金线,大幅降低了生产成本,且抗氧化效果强。
Description
技术领域
本实用新型涉及硅麦电路封装技术领域,尤其涉及一种镀金钯铜线封装硅麦电路键合线的结构。
背景技术
线焊是硅麦电路引线键合中最具代表性的焊接技术。它是在一定的温度下,对键合焊针加载压力,金属线的一端键合在芯片的铝垫上,另一端键合到PCB板上,以实现芯片内部电路与外围电路的连接。由于线焊操作方便、灵活,而且焊点牢固,无方向性,故可实现高速自动化焊接。传统的线焊采用高纯金,高纯金为硅芯片提供了良好导电散热性能,以使声学传感器在大功率应用时保持音质纯净,高清晰度的特点。
随着硅麦电路封装密度的增加,引线数更多,而市场却要求封装成本更低。在金线用量增大,金线价格上升的情况下,封装成本亦随之一路推高,成为硅麦电路封装业的难题。
高纯铜芯具有很低的材料成本,且在电、热、声学性能方面也优于金线,与金线相比,用量可更少,有利于进一步降低封装成本,因此铜芯替代金线已成趋势。
虽然铜芯在许多方面有优势,但在获得如金线一样稳健的线键合时也存在其自身的工艺瓶颈。由于铜芯极易氧化,表面生成的氧化铜层无法实现焊接。为了解决氧化问题,在热压焊接过程中须配置氮气保护,以避免高温状态下铜芯表面的快速氧化反应,同时还须配置氢气以去除铜丝表面已生成的氧化层。所以,同金线相比,铜芯娇气,工艺难度大、焊点质量不稳定。铜芯长期裸露在空气当中产生的氧化层对硅麦电路声学音质造成影响、导电散热能力趋于下降,声学稳定性差。
综合上述描述,现有的硅麦电路存在铜芯的易氧化问题。
实用新型内容
针对上述技术中存在的不足之处,本实用新型提供一种成本低、稳定性好及抗氧化性能强的镀金钯铜线封装硅麦电路键合线的结构。
为实现上述目的,本实用新型提供一种镀金钯铜线封装硅麦电路键合线的结构,包括PCB板、多个硅麦电路芯片和多条镀金钯铜线,所述多个硅麦电路芯片均通过对应的固晶胶固定在PCB板上,每条镀金钯铜线均包括铜芯和敷设在铜芯外表面的钯金层;每个硅麦电路芯片上均设置有芯片焊点,且PCB板上设置有引脚焊点,芯片焊点之间通过镀金钯铜线相焊接,且芯片焊点与镀金钯铜线的焊接处形成硅-铝-钯金-铜金属化互连结构,芯片焊点与引脚焊点之间通过镀金钯铜线相焊接,且引脚焊点与镀金钯铜线的焊接处形成铜-镍-金-钯金-铜金属化互连结构。
其中,所述镀金钯铜线焊接在芯片焊点上的端头采用高压电打成熔球,且该熔球的外表面覆有一层钯金膜,通过钯金膜将镀金钯铜线与外部空气相隔绝。
其中,所述芯片焊点的表面敷设有铝垫,所述镀金钯铜线的熔球采用硬质焊针压合在铝垫上后两接触面形成铝钯合金层,且芯片焊点与镀金钯铜线的焊接处形成该硅-铝-钯金-铜金属化互连结构。
其中,所述镀金钯铜线焊接在引脚焊点上的端头通过硬质焊针与高导金属层相压合,且两者的接触面压合后形成合金层。
其中,所述引脚焊点的基材为铜基材,且铜基材的表面电镀有镍层,该镍层的表面上电镀有金层,所述合金层楔焊到金层上后两者的接触面形成金钯合金层,且镀金钯铜线与引脚焊点的焊接处形成该铜-镍-金-钯金-铜金属化互连结构。
其中,所述高导金属层的材料为金,且该高导金属层的厚度在2-5µm之间。
其中,所述钯金层的厚度为0.1µm。
本实用新型的有益效果是:与现有技术相比,本实用新型提供的镀金钯铜线封装硅麦电路键合线的结构,该结构包括硅麦电路芯片和PCB板,且芯片焊点之间通过镀金钯铜线相焊接且形成硅-铝-钯金-铜金属化互连结构,芯片焊点与引脚焊点之间通过镀金钯铜线相焊接,且引脚焊点与镀金钯铜线的焊接处形成铜-镍-金-钯金-铜金属化互连结构;焊接处这种结构的改进,使得镀金钯铜线可作为内引线取代硅麦电路封装中传统的金线,大幅降低了生产成本,节约了金属资源,且有效的保证了硅麦电路声学音质纯静清晰;同时,镀金钯铜线包括铜芯和敷设在铜芯外表面的钯金层,可利用钯金不易氧化的特性,使铜芯外表面与外界空气隔离,焊接过程中不发生氧化反应,不需要增加保护气体,因此简化了工艺,且加强了抗氧化性能及生产成本。
附图说明
图1为本实用新型的镀金钯铜线封装硅麦电路键合线的结构的结构示意图;
图2为镀金钯铜线及熔球结构示意图;
图3为硅-铝-钯金-铜金属化互连结构示意图;
图4为合金层形成结构示意图;
图5为铜-镍-金-钯金-铜金属化互连结构示意图。
主要元件符号说明如下:
1、铜芯;2、钯金层;3、熔球;4、钯金膜;5、硬质焊针;6、镀金钯铜线;7、铝钯合金层;8、铝垫;9、硅麦电路芯片;10、高导金属层; 11、合金层; 12、铜基材; 13、镀镍层; 14、镀金层;15、金钯合金层16、PCB板17、固晶胶18、硅-铝-钯金-铜金属化互连结构19、铜-镍-金-钯金-铜金属化互连结构。
具体实施方式
为了更清楚地表述本实用新型,下面结合附图对本实用新型作进一步地描述。
请参阅图1-5,本实用新型提供的镀金钯铜线封装硅麦电路键合线的结构,包括PCB板16、多个硅麦电路芯片9和多条镀金钯铜线6,所述多个硅麦电路芯片均通过对应的固晶胶17固定在PCB板上,每条镀金钯铜线均包括铜芯1和敷设在铜芯外表面的钯金层2;每个硅麦电路芯片上均设置有芯片焊点,且PCB板上设置有引脚焊点,芯片焊点之间通过镀金钯铜线相焊接,且芯片焊点与镀金钯铜线的焊接处形成硅-铝-钯金-铜金属化互连结构18,芯片焊点与引脚焊点之间通过镀金钯铜线相焊接,且引脚焊点与镀金钯铜线的焊接处形成铜-镍-金-钯金-铜金属化互连结构19。
钯金层的厚度为0.1µm,镀金钯铜线,是采用含铜量为99.99%的高纯铜作铜芯,铜芯表面敷设厚度为0.1µm的钯金层。由于钯金层的保护,铜线不与空气接触,焊接过程中不发生氧化反应,因此不需要增加保护气体。
相较于现有技术的情况,本实用新型提供的镀金钯铜线封装硅麦电路键合线的结构,该结构包括硅麦电路芯片和PCB板,且芯片焊点之间通过镀金钯铜线相焊接且形成硅-铝-钯金-铜金属化互连结构,芯片焊点与引脚焊点之间通过镀金钯铜线相焊接,且引脚焊点与镀金钯铜线的焊接处形成铜-镍-金-钯金-铜金属化互连结构;焊接处这种结构的改进,使得镀金钯铜线可作为内引线取代硅麦电路封装中传统的金线,大幅降低了生产成本,节约了金属资源,且有效的保证了硅麦电路声学音质纯静清晰;同时,镀金钯铜线包括铜芯和敷设在铜芯外表面的钯金层,可利用钯金不易氧化的特性,使铜芯外表面与外界空气隔离,焊接过程中不发生氧化反应,不需要增加保护气体,因此简化了工艺,且加强了抗氧化性能及生产成本。
在本实施例中,所述镀金钯铜线6焊接在芯片焊点上的端头采用高压电打成熔球3,且该熔球的外表面覆有一层钯金膜4,通过钯金膜将镀金钯铜线与外部空气相隔绝。
在本实施例中,所述芯片焊点的表面敷设有铝垫8,所述镀金钯铜线的熔球采用硬质焊针5压合在铝垫上后两接触面形成铝钯合金层7,且芯片焊点与镀金钯铜线的焊接处形成该硅-铝-钯金-铜金属化互连结构18。
芯片焊点,是硅麦电路信号引出端的接点,芯片焊点是采用熔球焊法,将镀金钯铜线的端头用高压电打成熔球,然后在加热、加压、加摩擦力状态下将镀金钯铜线与铝垫的接触面形成铝钯合金层而实现焊接,该铝钯合金层具有一定拉伸强度和剪切强度。
在本实施例中,所述镀金钯铜线6焊接在引脚焊点上的端头通过硬质焊针5与高导金属层10相压合,且两者的接触面压合后形成合金层11。所述高导金属层的材料为金,且该高导金属层的厚度在2-5µm之间。
在本实施例中,所述引脚焊点的基材为铜基材12,且铜基材的表面电镀有镍层13,该镍层的表面上电镀有金层14,所述合金层楔焊到金层上后两者的接触面形成金钯合金层15,且镀金钯铜线与引脚焊点的焊接处形成该铜-镍-金-钯金-铜金属化互连结构19。
引脚焊点,是将硅麦电路信号接引到外部电路板引脚端的接点,其焊接是采用楔压焊法,合金层是在加热、加压、加摩擦力状态下将镀金钯铜线6与高导金属层10的接触面压合成合金层11,从而获得牢固的引脚焊点。
以上公开的仅为本实用新型的几个具体实施例,但是本实用新型并非局限于此,任何本领域的技术人员能思之的变化都应落入本实用新型的保护范围。
Claims (7)
1.一种镀金钯铜线封装硅麦电路键合线的结构,其特征在于,包括PCB板、多个硅麦电路芯片和多条镀金钯铜线,所述多个硅麦电路芯片均通过对应的固晶胶固定在PCB板上,每条镀金钯铜线均包括铜芯和敷设在铜芯外表面的钯金层;每个硅麦电路芯片上均设置有芯片焊点,且PCB板上设置有引脚焊点,芯片焊点之间通过镀金钯铜线相焊接,且芯片焊点与镀金钯铜线的焊接处形成硅-铝-钯金-铜金属化互连结构,芯片焊点与引脚焊点之间通过镀金钯铜线相焊接,且引脚焊点与镀金钯铜线的焊接处形成铜-镍-金-钯金-铜金属化互连结构。
2.根据权利要求1所述的镀金钯铜线封装硅麦电路键合线的结构,其特征在于,所述镀金钯铜线焊接在芯片焊点上的端头采用高压电打成熔球,且该熔球的外表面覆有一层钯金膜,通过钯金膜将镀金钯铜线与外部空气相隔绝。
3.根据权利要求2所述的镀金钯铜线封装硅麦电路键合线的结构,其特征在于,所述芯片焊点的表面敷设有铝垫,所述镀金钯铜线的熔球采用硬质焊针压合在铝垫上后两接触面形成铝钯合金层,且芯片焊点与镀金钯铜线的焊接处形成该硅-铝-钯金-铜金属化互连结构。
4.根据权利要求1所述的镀金钯铜线封装硅麦电路键合线的结构,其特征在于,所述镀金钯铜线焊接在引脚焊点上的端头通过硬质焊针与高导金属层相压合,且两者的接触面压合后形成合金层。
5.根据权利要求4所述的镀金钯铜线封装硅麦电路键合线的结构,其特征在于,所述引脚焊点的基材为铜基材,且铜基材的表面电镀有镍层,该镍层的表面上电镀有金层,所述合金层楔焊到金层上后两者的接触面形成金钯合金层,且镀金钯铜线与引脚焊点的焊接处形成该铜-镍-金-钯金-铜金属化互连结构。
6.根据权利要求4所述的镀金钯铜线封装硅麦电路键合线的结构,其特征在于,所述高导金属层的材料为金,且该高导金属层的厚度在2-5µm之间。
7.根据权利要求1所述的镀金钯铜线封装硅麦电路键合线的结构,其特征在于,所述钯金层的厚度为0.1µm。
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