CN100585821C - 一种用于金属框架的引线键合方法 - Google Patents

一种用于金属框架的引线键合方法 Download PDF

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CN100585821C
CN100585821C CN 200610148084 CN200610148084A CN100585821C CN 100585821 C CN100585821 C CN 100585821C CN 200610148084 CN200610148084 CN 200610148084 CN 200610148084 A CN200610148084 A CN 200610148084A CN 100585821 C CN100585821 C CN 100585821C
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metal framework
lead
wire bonding
pad
bonding
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Expired - Fee Related
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CN 200610148084
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CN101211797A (zh
Inventor
陈建华
钟寒
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Semiconductor Manufacturing International Beijing Corp
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Semiconductor Manufacturing International Shanghai Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

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  • Wire Bonding (AREA)

Abstract

本发明提供了一种用于金属框架的引线键合方法。现有的引线键合方法当第二焊接点落在金属框架边缘时容易产生虚焊、脱落等现象。本发明的方法先在金属框架的边缘位置植上金球，再使引线的第二焊接点压在金球上。通过在引线键合前增加一植金球的步骤，在金属框架和焊接点之间增加了一个良好的接触介质，从而有效提高了键合强度。

Description

一种用于金属框架的引线键合方法
技术领域
本发明涉及半导体制造工艺，尤其涉及一种引线键合方法。
背景技术
在芯片的装配过程中，需要在芯片和金属框架(leadframe)之间进行引线键合(wire bonding)。通常，若引线的第二焊接点(stitch bonding)在金属框架上时，采用直接接点键合方式来完成第二焊接点的键合。然而，由于金属框架在冲压成型的过程中不可避免地会在框架边缘部分形成毛边(如图1中所示的圆弧角)，如果根据布线空间的要求，引线第二焊接点的位置被安排在离金属框架边缘3mil的范围内，即位于毛边上，则由于键合位置不平整，使得第二焊接点的实际键合面积减小，容易导致引线虚焊、脱落等现象。
发明内容
本发明的目的在于提供一种用于金属框架的引线键合方法，以提高金属框架上的引线键合强度。
为了达到上述的目的，本发明提供一种用于金属框架的引线键合方法，所述金属框架具有不平整的边缘，且引线的第二焊接点需要键合至金属框架的边缘位置，所述方法先在金属框架的边缘位置植上金球，再使引线的第二焊接点压在金球上。
在上述的用于金属框架的引线键合方法中，所述第二焊接点压在金球的中心位置，并压成鱼尾形。
本发明针对金属框架边缘不平整影响键合强度的问题，提供一种用于金属框架的引线键合方法，通过在引线键合前增加一植金球的步骤，在金属框架和焊接点之间增加了一个良好的接触介质，从而有效提高了键合强度。
附图说明
通过以下实施例并结合其附图的描述，可以进一步理解其发明的目的、具体结构特征和优点。其中，附图为：
图1为金属框架的毛边示意图；
图2为本发明用于金属框架的引线键合方法的示意图。
具体实施方式
以下将对本发明的用于金属框架的引线键合方法作进一步的详细描述。
参见图2，其显示了本发明的引线键合方法。以从芯片1引线键合到金属框架2为例，该金属框架具有不平整的边缘21。根据布线空间的要求，引线4的第二焊接点(图中未标号)需要键合在金属框架2的边缘位置21，为了防止虚焊或接脚脱落的发生，本发明在引线键合之前增加一植金球的步骤。如图2所示，首先在金属框架2的边缘位置21植上金球3，再使引线4的第二焊接点压在金球3上。由于金球3的温度高，键合时容易产生良好的形变，且金球3直径较大，可增加粘附面积，从而使金球3和金属框架2、金球3和引线4第二焊接点均形成良好的接触，大大提高了键合强度。
为了满足较高的工艺要求，第二焊接点应压在金球3的中心位置，并压成鱼尾形。实验结果证明，采用本发明的方法键合的焊接点在拉力测试下比采用现有方式键合的焊接点能承受更大的拉力。

Claims (3)

1、一种用于金属框架的引线键合方法，所述金属框架具有不平整的边缘，引线的第二焊接点需要键合至金属框架的边缘位置，其特征在于：所述方法先在金属框架的边缘位置植上金球，再使引线的第二焊接点压在金球上。
2、如权利要求1所述的用于金属框架的引线键合方法，其特征在于：所述第二焊接点压在金球的中心位置。
3、如权利要求1所述的用于金属框架的引线键合方法，其特征在于：所述第二焊接点压成鱼尾形。
CN 200610148084 2006-12-27 2006-12-27 一种用于金属框架的引线键合方法 Expired - Fee Related CN100585821C (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5062283B2 (ja) * 2009-04-30 2012-10-31 日亜化学工業株式会社 半導体装置及びその製造方法
WO2012055085A1 (zh) * 2010-10-26 2012-05-03 上海嘉塘电子有限公司 一种芯片与芯片、芯片与金属框架间的引线键合方法
CN107293500A (zh) * 2017-06-28 2017-10-24 华进半导体封装先导技术研发中心有限公司 一种系统级封装打线方法及装置
CN113782454A (zh) * 2021-09-07 2021-12-10 西安微电子技术研究所 一种实现无预镀层引线框架表面引线键合的方法

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