CN101276769B - 用于制备楔形楔形引线弧的方法 - Google Patents

用于制备楔形楔形引线弧的方法 Download PDF

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CN101276769B
CN101276769B CN2007100919548A CN200710091954A CN101276769B CN 101276769 B CN101276769 B CN 101276769B CN 2007100919548 A CN2007100919548 A CN 2007100919548A CN 200710091954 A CN200710091954 A CN 200710091954A CN 101276769 B CN101276769 B CN 101276769B
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lead
wire
capillary
tie point
wedge shape
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CN101276769A (zh
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扬·马特米勒
马里特·塞德
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Besi Switzerland AG
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Oerlikon Assembly Equipment AG
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
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Abstract

一种楔形楔形引线弧(5)用以下步骤形成：a)将毛细管(11)降低到第一连接点(1)上并施加预定的焊接力和超声，用于在第一连接点(1)上制造楔形连接；b)在基本垂直的方向上将毛细管(11)升高预定的距离D1；c)横向和向下地移动毛细管(11)，以便弯曲引线(4)并将引线压向楔形连接；d)升高毛细管(11)并移动毛细管(11)，以便形成引线弧(5)并将引线(4)接合至第二连接点(7)；和e)撕断引线(4)。

Description

用于制备楔形楔形引线弧的方法
技术领域
本发明涉及一种制备楔形楔形引线弧(wedge wedge wire loop)的方法。
背景技术
引线弧用于制造半导体芯片和衬底之间的电连接。根据应用，对引线弧有不同的要求。引线弧主要通过所谓的球形焊线机制造。球形焊线机具有向环形工作面打开的纵向钻孔的毛细管(capillary)。毛细管被夹固到焊头(horn)尖端。引线穿过毛细管的纵向钻孔。毛细管用于将引线接合至半导体芯片上的连接点和衬底上的连接点，以及引导两个连接点之间的引线。在制造半导体芯片上的连接点和衬底上的连接点之间的引线连接时，首先，将伸出毛细管的引线的端部熔化成球。然后，借助压力和超声将该球接合至半导体芯片上的连接点。在这种情况下，来自超声换能器的超声被施加到焊头。该工艺称为球形焊接。然后，引线被拉出至所需的长度，形成为引线弧并被热压焊接至衬底上的连接点。该最后的子工艺称为楔形焊接。在引线接合至衬底上的连接点之后，引线被撕断并且可以开始下一个焊接循环。
从专利US4437604得知，借助楔形连接将引线弧接合至两个连接点的方法是公知的。这意味着省略了引线球的形成，并且通过挤压毛细管下的一段引线来制造两个引线连接，即毛细管的工作面将引线压向连接点。挤压引线是通过施加预定的力和超声来进行的，通常增加了温度。因为用球形焊线机而不用楔形焊线机来制造楔形连接，所以第一连接点上的楔形连接的质量一般不满足设置需求，其中用球形焊线机时毛细管把引线压到各连接点上，用楔形焊线机时楔形焊接工具用于接合和引导引线。图1示出了在第一连接点1上制造的第一楔形连接。该楔形连接包括所谓的楔形焊点(wedge bond)2和所谓的尾焊点(tail bond)3。为了实现第一连接点上楔形焊点的良好粘附，在焊接期间，必须用大量的能量、即用相对高的焊接力和在应用超声的条件下将引线4压向第一连接点。因此，楔形焊点和尾焊点之间的结合部很薄或者甚至完全切断，以致于引线实际上仅通过尾焊点连接至连接点。尾焊点的粘附力自然比楔形焊点的粘附力更弱，这是因为毛细管的几何形状，一方面连接面积很小，另一方面，毛细管的压力和超声的影响在这里很低。由于随后形成的引线弧，相当大的力作用于尾焊点上，这导致尾焊点变弱，并因此继而导致“引线偏移(wire sway)”、“颈倾斜(neck tilt)”、“弧高度”和“弧形状”变化等公知的所有问题，或者甚至导致尾焊点从表面撕离。因此在原理上该方法能够利用球形焊线机制造楔形-楔形连接。然而，由于指出的原因，由于自然较弱的尾焊点，第一接触的稳定性和因此引线弧的稳定性是完全不够的。为此，楔形-楔形方法被遗忘了，并且仅在近几年又重新开始。
从专利申请US2005-0054186获知在半导体芯片和衬底之间制造凸点-楔形楔形引线弧的方法。利用该方法，首先，将凸点应用到半导体芯片上的连接点，然后制造引线弧，即伸出毛细管的引线的端部被接合至凸点，作为楔形连接，引线被拉出至所需的长度并被接合至衬底上的第二连接点，作为楔形连接。
从专利申请US2004-0152292获知在半导体芯片和衬底之间制造球形凸点-楔形引线弧的方法。利用该方法，首先，将所谓的凸点应用到半导体芯片上的连接点，然后制造引线弧，即伸出毛细管的引线被熔化成球，并被接合至衬底，作为球形连接，引线被拉出至所需的长度并被接合至半导体芯片上的凸点，作为楔形连接。该方法公知为“反向焊接(Reverse Bonding)”。其不是楔形楔形法。
最后提到的两种方法能够实现实际上被引离的引线平行于半导体芯片的表面。然而“反向焊接”具有两个引线连接必须形成引线球的缺点，这对于制造引线弧会导致相对长的循环时间。其它的方法具有必须形成仅一个引线球的优点，但具有引线弧一般不能形成所需形状的缺点。
发明内容
本发明的目的在于提出了一种用于制造楔形楔形引线弧的方法，利用该方法消除了上述的缺点。
楔形楔形引线弧用如下步骤形成：
a)使毛细管降低到第一连接点上并施加预定的焊接力和超声，用于在第一连接点上制造楔形连接，
b)使毛细管在基本垂直的方向上升高预定的距离D1，
c)横向和向下地移动毛细管，以便弯曲引线并将其压向楔形连接，
d)升高毛细管并移动毛细管，以便形成引线弧并将引线接合至第二连接点，和
e)撕断引线。
附图说明
并入和构成本申请的一部分的附图示出了本发明的一个或多个实施例，并且与详细的说明一起，用于说明本发明的原理和实施方式。各图没有按比例绘制。在图中：
图1示出了根据现有技术的楔形连接，
图2示出了根据具有第一和第二楔形连接的本发明制造的引线弧，
图3-8示出了在制造第一楔形连接期间的快照，
图9示出了毛细管的可能的轨迹路径，
图10以放大比例示出了图9的一部分，
图11示出了仅在其走向上不同的两个楔形连接，和
图12-14示出了毛细管的进一步可能的轨迹路径。
具体实施方式
图2示出了利用根据本发明的方法制造的在衬底6上的第一连接点1和在半导体芯片8上的第二连接点7之间的引线弧5。半导体芯片8被接合到衬底6。在该实例中，第二连接点7位于比第一连接点1高的高度处。在制造引线弧5之前，将所谓的凸点9应用到第二连接点7。可以利用球形焊线机或借助另外的已知方法产生凸点9并将凸点9应用到第二连接点7。衬底6可以是半导体工业中已知的任意衬底。衬底6也可以是第二半导体芯片，如已经存在的许多应用那样，通过这些应用，各半导体芯片被一个直接安装在另一个的顶部上作为“叠置管芯”。在制造引线弧5时，首先，借助第一楔形连接将伸出球形焊线机的毛细管的引线的端部接合至衬底6上的第一连接点1，将引线拉出至所需的长度由此做引线弧，然后借助第二楔形连接，将引线连接至第二连接点7的凸点9或者可选地直接连接至第二连接点7。
图3至8示出了在制造第一楔形连接期间获得的快照。现在将详细地说明根据本发明制作楔形楔形引线弧的方法，尤其是第一楔形连接的制造。
为了将伸出毛细管11的一段引线接合至第一连接点1作为楔形连接，该段引线必须不在毛细管11的纵向钻孔12的纵向方向上行进，但必须和纵向方向呈预定最小角φ0，以便毛细管11可以将引线4压到第一连接点1上并制造具有可重现特性的楔形连接。在下面，假定伸出毛细管11的引线4的端部10与毛细管11的纵向钻孔12呈比最小角φ0大的角φ，并且有利地在随后制造的引线弧的方向上走向。图3示出了具有纵向钻孔12的毛细管11和伸出毛细管11尖端的引线4的端部10。现在利用以下的工艺步骤制造第一连接点1上的楔形连接：
1.将毛细管11降低到第一连接点1上并且将伸出毛细管11的引线4的端部10固定到第一连接点1，即，将预定的焊接力和超声施加到毛细管11。现在，将引线的端部接合至第一连接点1作为楔形连接，由此该楔形连接包括楔形焊点2和尾焊点3。在这种情况下，将毛细管11的环形工作区13压到引线4的端部10上。图4示出了在该工艺步骤之后获得的快照。
2.在基本垂直的方向上将毛细管11升高预定的距离D1。当毛细管11在垂直方向上移动时，引线4和毛细管11之间的摩擦则最小。因此，作用于尾焊点3上的力也最小。图5示出了在该工艺步骤之后获得的快照。
3.横向并向下地移动毛细管11，以便使引线4弯曲并将它压到楔形连接上。图6示出了近似在该工艺步骤中间获得的快照。图7示出了在该工艺步骤之后获得的快照。
步骤3用于将引线4稳固地锚定到第一楔形焊点2上，以便引线4在随后的形成和完成引线弧5期间不被撕断。
如在图5中可以看到的，毛细管11在以边缘14终止的楔形焊点2中留下印记。如在图8中可以看到的，在步骤1至3期间，毛细管11从第一连接点1上的最初撞击点移动离开距离D2。在步骤2中毛细管11的移动优选沿着基本圆形的路径，该圆形路径以第一连接点1上的最初撞击点为中心，半径r＝D1。因此距离D2大致等于距离D1。距离D1和D2的优选尺寸是使毛细管11的纵向钻孔12的出口位于如图7中表示的楔形焊点2上。
现在已制造了引线4和衬底5之间的第一连接。现在用以下的步骤完成引线弧5。
4.将引线4拉出至所需的长度，由此毛细管11遵循的轨迹路径按照常规行进，以便在这种情况下做引线弧5。
5.移动毛细管11至第二连接点7那样远。
6.将引线接合至第二连接点7上的凸点9，或者可选地直接接合至第二连接点7上。
7.在接合之后和撕断引线4之前，毛细管11被略微升高并打开引线夹(wire clamp)，然后在水平或对角向上行进的方向上且优选在要被制造的下一个引线弧5的方向上移动毛细管11，然后关闭引线夹并进一步移动毛细管11，直至引线4撕断。引线4现在与纵向方向呈比最小角φ0大的角φ。此外，最佳地对准引线4，以制造下一个引线连接5的第一楔形连接。
当不需要凸点时或当所有的凸点都已经位于第二连接点7上时，如所述的那样进行工艺步骤6和7。或者，如果必须制造楔形楔形引线弧并然后制造凸点，则必须在工艺步骤6之后和在工艺步骤7之前执行两个另外的工艺步骤6B和6C：
6B.在接合之后，略微升高毛细管11并且打开引线夹，然后关闭引线夹，并且进一步升高毛细管11直至引线4撕断。
6C.将伸出毛细管11的一段引线熔化成球并放置到第二连接点上作为凸点。
利用根据本发明的方法的第一形式，在步骤3和4中，毛细管11沿着预定的轨迹路径15行进，由此在从步骤3到步骤4的转变时，使其行进运动的方向反向。图9示出了毛细管11的最佳轨迹路径15，用于制造图2中提出的引线弧5。图10示出了图9中用圆圈标出的部分的放大图，涉及根据上述的工艺步骤1至3制造第一楔形连接。
因为根据该方法制造的第一楔形连接牢固地锚定在衬底6上，在原理上，其对准不重要。在图11中示出了具有不同对准的两个这种楔形连接，也就是它们的走向旋转180°。
对于引线的弯曲，代替最佳的轨迹路径，可以是其它的轨迹路径。在图12至14中示出了其实例。各轨迹路径由直线路径段或曲线路径段形成，上述路径段一起或与第一连接点1呈角α、β或γ。角α、β和γ可以宽泛地改变。有利地，轨迹路径在拐角处变圆，即在从一个路径段到下一个路径段的转变处变圆，以便毛细管11能够尽可能沿着轨迹路径行进，而不停止，因为每个停止会导致时间损失。这也适用于图9中表示的轨迹路径。
利用根据本发明的方法的第二形式，在步骤3之后和在步骤4之前进行步骤3B。在步骤3B中，将预定的焊接力和任选的超声应用到毛细管11达预定时间段，以便将该弯曲段的引线焊接到毛细管11的工作面13下面的楔形连接。
本发明的基本优点是：
-因为引线被稳固地锚定到第一连接点1，所以容易耐受以下载荷，其中引线在引线弧形成时被暴露于所述载荷。因此，毛细管可以沿着最佳适合于要实现的引线弧形状的任何轨迹路径行进。另一方面，需要时，衬底上的楔形连接的对准能够适应于给定的需求。
-由于必然会少一个引线球、也就是用一个代替两个或用没有代替一个时，循环时间比现有技术短。
-利用根据第一形式的方法，在引线弧形成期间再次弯曲引线，并压向刚被制造的楔形连接，由此改变方向仅需要短暂的停止。因为毛细管在反向点处停留的时间很短，且弯曲段的引线没有借助超声被焊接至楔形连接，所以导致极短的循环时间。
-利用某些材料和工艺，楔形接触表现出比球形接触更可靠的连接。借助建议的在第一连接点处的楔形连接，能够防止前述问题。
根据本发明的方法尤其适合于制造如图2所示的引线弧。对于诸如具有一个直接安装在另一个顶部上的至少两个半导体芯片的“叠置管芯”这样的应用，在第一连接点1处的引线必须非常陡地升高，即，角φ一般必须大于75°，以便在不同水平行进的引线弧不彼此接触，并且仍然占用尽可能小的空间。然而，该本发明不限于这种引线弧。本发明在要制备的引线弧的第一连接必须是楔形连接的任何情况都可以使用。
虽然已示出和描述了本发明的实施例和应用，但对本领域技术人员显而易见的是，在具有该公开的优点的情况下，可以进行以上提到的许多更多的修改，而不脱离这里的发明概念。因此，除了权利要求和它们的等效物的精神外，不限制本发明。

Claims (3)

1.一种用于用毛细管(11)制造第一连接点(1)和第二连接点(7)之间的楔形楔形引线弧(5)的方法，毛细管(11)具有纵向钻孔(12)，其出口开口于工作表面(13)，由此通过纵向钻孔(12)引导引线并由此毛细管(11)用于将引线(4)接合至第一连接点(1)和第二连接点(7)，并且在第一连接点(1)和第二连接点(7)之间引导引线(4)，该方法包括步骤：
a)将毛细管(11)降低到第一连接点(1)上并施加预定的焊接力和超声，用于在第一连接点(1)上制造楔形连接，
b)在垂直的方向上将毛细管(11)升高预定距离D1，
c)横向和向下地移动毛细管(11)，以便弯曲引线(4)并将引线压向楔形连接，
d)升高毛细管(11)并移动毛细管(11)，以便形成引线弧(5)并将引线(4)接合至第二连接点(7)，和
e)撕断引线(4)。
2.根据权利要求1的方法，其中在步骤d之后，在要被制造的下一个引线弧的引线方向上移动毛细管(11)，以便对准伸出毛细管(11)的引线(4)的端部(10)。
3.根据权利要求1或2的方法，其中在步骤c中，沿着圆形的路径段进行毛细管(11)的移动。
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Publication number Priority date Publication date Assignee Title
US9087815B2 (en) * 2013-11-12 2015-07-21 Invensas Corporation Off substrate kinking of bond wire
US9082753B2 (en) * 2013-11-12 2015-07-14 Invensas Corporation Severing bond wire by kinking and twisting
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Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4437604A (en) 1982-03-15 1984-03-20 Kulicke & Soffa Industries, Inc. Method of making fine wire interconnections
JPH03289149A (ja) 1990-04-05 1991-12-19 Matsushita Electric Ind Co Ltd ワイヤボンディング方法
US5111989A (en) 1991-09-26 1992-05-12 Kulicke And Soffa Investments, Inc. Method of making low profile fine wire interconnections
US6012625A (en) 1995-03-10 2000-01-11 Fraunhofer-Gesellschaft Zur Forderungder Angewandten Forschung E.V. Process and device for forming raised metallised contacts
JP2002280414A (ja) 2001-03-22 2002-09-27 Mitsubishi Electric Corp 半導体装置およびその製造方法
WO2002082527A1 (en) 2001-04-05 2002-10-17 Stmicroelectronics Pte Ltd Method of forming electrical connections
US20030222338A1 (en) 2002-01-04 2003-12-04 Sandisk Corporation Reverse wire bonding techniques
US7229906B2 (en) 2002-09-19 2007-06-12 Kulicke And Soffa Industries, Inc. Method and apparatus for forming bumps for semiconductor interconnections using a wire bonding machine
JP2004172477A (ja) 2002-11-21 2004-06-17 Kaijo Corp ワイヤループ形状、そのワイヤループ形状を備えた半導体装置、ワイヤボンディング方法及び半導体製造装置
JP4021378B2 (ja) 2003-06-27 2007-12-12 株式会社新川 ワイヤボンディング方法
KR100536898B1 (ko) 2003-09-04 2005-12-16 삼성전자주식회사 반도체 소자의 와이어 본딩 방법
US7494042B2 (en) 2003-10-02 2009-02-24 Asm Technology Singapore Pte. Ltd. Method of forming low wire loops and wire loops formed using the method
JP2005159267A (ja) 2003-10-30 2005-06-16 Shinkawa Ltd 半導体装置及びワイヤボンディング方法
TWI248186B (en) 2004-01-09 2006-01-21 Unaxis Internat Tranding Ltd Method for producing a wedge-wedge wire connection
JP3946730B2 (ja) * 2004-04-26 2007-07-18 株式会社カイジョー ボンディングワイヤのループ形状及びそのループ形状を備えた半導体装置並びにワイヤボンディング方法
JP4215693B2 (ja) * 2004-08-16 2009-01-28 株式会社新川 ワイヤボンディング方法

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US20070231959A1 (en) 2007-10-04
US7741208B2 (en) 2010-06-22
HK1119833A1 (en) 2009-03-13
DE102007013100A1 (de) 2007-10-11
JP2007273991A (ja) 2007-10-18
KR20070098542A (ko) 2007-10-05
TW200800452A (en) 2008-01-01
TWI345501B (en) 2011-07-21
CH697970B1 (de) 2009-04-15
MY142142A (en) 2010-09-30
CN101276769A (zh) 2008-10-01

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