TWI345501B - Method for making a wedge wedge wire loop - Google Patents
Method for making a wedge wedge wire loop Download PDFInfo
- Publication number
- TWI345501B TWI345501B TW096110964A TW96110964A TWI345501B TW I345501 B TWI345501 B TW I345501B TW 096110964 A TW096110964 A TW 096110964A TW 96110964 A TW96110964 A TW 96110964A TW I345501 B TWI345501 B TW I345501B
- Authority
- TW
- Taiwan
- Prior art keywords
- lead
- capillary
- wedge
- connection point
- connection
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 27
- 238000003466 welding Methods 0.000 claims description 8
- 238000002604 ultrasonography Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 17
- 229910000679 solder Inorganic materials 0.000 description 9
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
- B23K20/005—Capillary welding
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- Wire Bonding (AREA)
Description
1345501 九、發明說明: 【發明所屬之技術領域】 本發明涉及一種製作楔形楔形引線弧(wedge wedge wire loop )的方法。 【先前技術】 引線弧用於產生半導體晶片和基板之間的電連接。根 據應用,對引線弧有不同的要求。引線弧主要以所謂的球 形焊線機(Ball-wire Bonder)製作。球形焊線機具有向環形 工作面打開的縱向鑽孔的毛細管(capillary )。毛細管被夾 固到焊頭(horn )尖端。引線穿過毛細管的縱向鑽孔。毛 細管用於將引線接合至半導體晶片上的連接點和基板上的 連接點,以及引導兩個連接點之間的引線。在製作半導體 晶片上的連接點和基板上的連接點之間的引線連接時,首 先,將伸出毛細管的引線的端部熔化成球。然後,借助壓 力和超音波將該球接合至半導體晶片上的連接點。在這種 情況下,來自超音波換能器的超音波被施加到焊頭。此過 程稱爲球形焊接。然後,引線被拉出至所需的長度,形成 爲引線弧並被熱壓焊接至基板上的連接點。此最後的次過 程稱爲楔形焊接。在引線接合至基板上的連接點之後,引 線被扯斷並且可以開始下一個焊接循環。 從專利US 44 37604得知,借助楔形連接將引線弧接合 至兩個連接點的方法是公知的。這意味著省略了引線球的 形成,並且藉由擠壓毛細管下的一段引線來製作兩個引線 連接,即毛細管的工作面將引線壓向連接點。擠壓引線是 -5- 1345501 以施加預定的力和超音波來進行的,通常伴隨著升高的溫 度。因爲用球形焊線機而不用楔形焊線機來製作楔形連 接’所以第一連接點上的楔形連接的品質一般無法滿足設 定的需求’其中用球形焊線機時毛細管把引線壓到各連接 點上’用楔形焊線機時楔形焊接工具用於接合和引導引 線。第1圖示出了在第一連接點1上製作的第一楔形連接。 該楔形連接包括所謂的楔形焊點(wedge bond ) 2和所謂的 尾焊點(tail bond ) 3。爲了實現第一連接點上楔形焊點的 良好粘附,在焊接期間,必須用大量的能量、即用相對高 的焊接力和在應用超音波的條件下將引線4壓向第一連接 點。因此,楔形焊點和尾焊點之間的結合部很薄或者甚至 完全切斷,以致於引線實際上僅藉由尾焊點連接至連接 點。尾焊點的粘附力自然比楔形焊點的粘附力更弱,這是 因爲毛細管的幾何形狀,一方面連接面積很小,另一方面, 毛細管的壓力和超音波的影響在這裏很低。由於隨後形成 的引線弧,相當大的力作用於尾焊點上,這導致尾焊點變 弱,並因此繼而導致「引線偏移(wire sway)」、「頸傾 斜(neck tilt)」、「弧高度」和「弧形狀」變化等公知的 所有問題,或者甚至導致尾焊點從表面扯離。因此在原理 上該方法能夠利用球形焊線機製作楔形-楔形連接。然而’ 由於指出的原因,由於本質較弱的尾焊點,第一接觸的穩 定性和因此引線弧的穩定性是完全不夠的。爲此,楔形-楔 形方法被遺忘了,並且僅在近幾年又重新開始。 從專利申請US 2005-0054186獲知在半導體晶片和基 -6- 1345501 板之間製作凸點-楔形楔形引線弧的方法。利用該方法,首 先’將凸點施加到半導體晶片上的連接點,然後製作引線 弧’即伸出毛細管的引線的端部被接合至凸點,作爲楔形 連接,引線被拉出至所需的長度並被接合至基板上的第二 連接點,作爲楔形連接。 從專利申請US 2004-01 52292獲知在半導體晶片和基 板之間製作球形凸點-楔形引線弧的方法。利用該方法,首 先’將所謂的凸點施加到半導體晶片上的連接點,然後製 作引線弧’其中伸出毛細管的引線被熔化成球,並被接合 至基板’作爲球形連接,引線被拉出至所需的長度並被接 合至半導體晶片上的凸點,作爲楔形連接。該方法公知爲 「反向焊接(Reverse Bonding)」。其不是楔形楔形法。 最後提到的兩種方法能夠實現實際上被引離的引線平 行於半導體晶片的表面。然而「反向焊接」具有兩個引線 連接必須形成引線球的缺點,這對於製作引線弧會導致相 對長的循環時間。另一方法具有必須形成僅一個引線球的 優點’但具有引線弧經常不能形成所需形狀的缺點。 【發明内容】 本發明的目的在於發展一種用於製作楔形楔形引線弧 的方法,利用該方法消除了上述的缺點。 楔形楔形引線弧用如下步驟形成: a) 使毛細管降低到第一連接點上並施加預定的焊接力 和超音波,用於在第一連接點上製作楔形連接, b) 使毛細管在本質上垂直的方向上升高預定的距離 1345501 D1, c) 橫向和向下地移動毛細管,以便彎曲引線並將其壓 向楔形連接, d) 升高毛細管並移動毛細管,以便形成引線弧並將引 線接合至第二連接點,和 e )扯斷引線》 【實施方式】 第2圖示出了利用根據本發明的方法製作的在基板6 上的第一連接點1和在半導體晶片8上的第二連接點7之 間的引線弧5。半導體晶片8被接合到基板6»在該實例中, 第二連接點7位於比第一連接點1高的高度處。在製作引 線弧5之前,將所謂的凸點9施加到第二連接點7。可以 利用球形焊線機或借助另外的已知方法產生凸點9並將凸 點9施加到第二連接點7。基板6可以是半導體工業中已 知的任意基板。基板6也可以是第二半導體晶片,如已經 存在的許多應用那樣,利用這些應用,各半導體晶片被一 個直接安裝在另一個的頂部上作爲「疊置晶片(stacked dies)在製作引線弧5時,首先,藉由第一楔形連接將伸 出球形焊線機的毛細管的引線端部接合至基板6上的第一 連接點1,將引線拉出至所需的長度藉此預形成引線弧, 然後藉由第二楔形連接,將引線連接至第二連接點7的凸 點9或者可選地直接連接至第二連接點7。 第3圖至第8圖示出了在製作第一楔形連接期間獲得 的快照。現在將詳細地說明根據本發明製作楔形楔形引線 -8- 1345501 弧的方法,尤其是第一楔形連接的製作。 爲了將伸出毛細管11的一段引線接合至第一連接點1 作爲楔形連接,該段引線必須不在毛細管11的縱向鑽孔 12的縱向方向上行進,但必須和縱向方向呈預定最小角 Φ。’以便毛細管1 1可以將引線4壓到第一連接點1上並製 作具有可重現特性的楔形連接。下文中,假定伸出毛細管 11的引線4的端部10與毛細管11的縱向鑽孔12呈比最小 角Φ〇大的角φ,並且有利地在隨後製作的引線弧的方向上定 向。第3圖示出了具有縱向鑽孔12的毛細管11和伸出毛 細管11尖端的引線4的端部10。現在利用以下的程序步 驟製作第一連接點1上的楔形連接: 1 ·將毛細管1 1降低到第一連接點1上並且將伸出毛 細管11的引線4的端部10固定到第一連接點丨,其中將 預定的焊接力和超音波施加到毛細管11。現在,將引線的 端部接合至第一連接點1作爲楔形連接,藉此該楔形連接 包括楔形焊點2和尾焊點3。在這種情況下,毛細管11的 環形工作區13壓到引線4的端部10上。第4圖示出了在 該程序步驟之後獲得的快照。 2.在本質上垂直的方向上將毛細管π升高預定的距 離D1。當毛細管11在垂直方向上移動時,引線4和毛細 管1 1之間的摩擦則最小。因此’作用於尾焊點3上的力也 最小。第5圖示出了在該程序步驟之後獲得的快照。 3·橫向並向下地移動毛細管11,以便使引線4彎曲並 將它壓到楔形連接上。第6圖示出了近似在該程序步驟中 -9- 1345501 11’直至引線4扯斷。引線4現在與縱向方向呈比最小角 Φ〇大的角φ。此外,最佳地對準引線4,以製作下一個引線 連接5的第一楔形連接。 當不需要凸點時或當所有的凸點都已經位於第二連接 ·_ 點7上時,如所述的那樣進行程序步驟6和7。或者,如 -- 果必須製作楔形楔形引線弧並然後製作凸點,則必須在程 序步驟6之後和在程序步驟7之前執行兩個另外的程序步 驟6Β和6C : 6Β.在接合之後,略微升高毛細管 π並且打開引線 夾’然後關閉引線夾,並且進一步升高毛細管11直至引線 4扯斷。 6C.將伸出毛細管11的一段引線熔化成球並放置到第 二連接點上作爲凸點。 利用根據本發明的方法的第一形式,在步驟3和4中, 毛細管1 1沿著預定的軌跡路徑15行進,藉此在從步驟3 φ 到步驟4的轉變時,使其行進運動的方向反向。第9圖示 出了毛細管1 1的最佳軌跡路徑1 5,用於製作呈現在第2 . 圖中的引線弧5»第10圖示出了第9圖中用圓圈標出的部 分的放大圖,涉及根據上述的程序步驟1至3製作第一楔 形連接。 因爲根據此方法製作的第一楔形連接牢固地錨定在基 板6上,在原理上,其對準不重要。在第11圖中示出了具 有不同對準的兩個這種楔形連接,也就是它們的走向旋轉 180。。 -11- 1345501 對於引線的彎曲,代替最佳的軌跡 的軌跡路徑。在第12圖至第14圖中示 跡路徑由直線路徑段或曲線路徑段形成 或與第一連接點1呈角α、沒或r。角 泛地改變。有利地,軌跡路徑在拐角處 路徑段到下一個路徑段的轉變處變圓,J 盡可能沿著軌跡路徑行進,而不停止, 致時間損失。這也適用於第9圖中表示 利用根據本發明的方法的第二形式 在步驟4之前進行步驟3B。在步驟3B 和任選的超音波施加到毛細管11達預男 彎曲段的引線焊接到毛細管1 1的工作ί 接。 本發明的基本優點是: -因爲引線被穩固地錨定到第一連接 受以下載荷,其中引線在引線弧形成Β 荷。因此,毛細管可以沿著最佳適合於 狀的任何軌跡路徑行進。另一方面,需 形連接的對準能夠適應於給定的需求。 -由於必然會少一個引線球、也就是 以沒有代替一個時,循環時間比現有技: -利用根據第一形式的方法,在引線 曲引線,並壓向剛被製作的楔形連接, 要短暫的停止。因爲毛細管在反轉點處 路徑,可以是其他 出了其實例。各軌 ,上述路徑段一起 α、石和7·可以寬 變圓,即在從一個 (便毛細管1 1能夠 因爲每個停止會導 的軌跡路徑。 ,在步驟3之後和 戸,將預定的焊接力 時間段,以便將該 i 13下面的楔形連 點1,所以容易耐 寺被暴露於所述載 要實現的引線弧形 要時,基板上的楔 以一個代替兩個或 術短。 弧形成期間再次彎 藉此改變方向僅需 停留的時間很短, -12- 1345501 且彎曲段的引線沒有藉由超音波被焊接至楔形連接,所以 導致極短的循環時間。 -利用某些材料和方法,楔形接觸表現出比球形接觸更 可靠的連接。藉由建議的在第一連接點處的楔形連接,能 夠防止前述問題。 根據本發明的方法尤其適合於製作如第2圖所示的引 線弧。對於諸如具有一個直接安裝在另一個頂部上的至少 兩個半導體晶片的「疊置晶片」這樣的應用,在第一連接 點1處的引線必須非常陡地升高,即,角φ —般必須大於 75°,以便在不同水準行進的引線弧不彼此接觸,並且仍然 占用盡可能小的空間。然而,該本發明不限於這種引線弧。 本發明在要製作的引線弧的第一連接必須是楔形連接的任 何情況都可以使用。 雖然已示出和描述了本發明的實施例和應用,但對得 到本揭示益處的本領域技術人員顯而易見的是,在不背離 在此的發明槪念的情況下,可以進行以上提到許多更多的 修改。因此,本發明並不侷限於後附的申請專利之精神而 應涵蓋其均等物。 【圖式簡單說明】 倂入說明書中且構成此說明書的一部分的附圖示出本 發明的一個或多個實施例,並且與詳細的說明一起用於說 明本發明的原理和實施方式。各圖沒有按比例繪製。在圖 中: 第1圖示出根據先前技術的楔形連接, -13- 1345501 第2圖示出了根據本發明製作具有第一和第二楔形胃 接的引線弧, 第3圖-第8圖示出了在製作第一楔形連接期間的快 照, 第9圖示出了毛細管的可能的軌跡路徑, 第10圖以放大比例示出了第9圖的一部分, 第11圖示出了僅在其走向上不同的兩個楔形連接,和 第12圖-第14圖示出了毛細管的進一步可能的軌跡路 徑。 【主要元件符號說明】 1 第一連接點 2 楔形焊點 3 尾焊點 4 引線 5 引線弧 6 基板 7 第二連接點 8 半導體晶片 9 凸點 10 端部 11 毛細管 12 鑽孔 13 工作區 14 邊緣 •14- 1345501 15 軌跡路徑 D 1 距離 D2 距離 r 半徑
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Claims (1)
1345501 十、申請專利範圍: 1 · 一種以毛細管(1 1 )製作第一連接點(1 )和第二連接點 (7)之間的楔形楔形引線弧(5)的方法,毛細管(11 )具有縱向鑽孔(12),其出口開口於工作表面(13), 藉此通過縱向鑽孔(12)引導引線並藉此毛細管(11) 用於將引線(4)接合至第一連接點(1)和第二連接點 (7),並且在第一連接點(1)和第二連接點(7)之間 引導引線(4 ),該方法包括步驟: a )將毛細管(1 1 )降低到第一連接點(1 )上並施加 預定的焊接力和超音波,用於在第一連接點(1)上製作 楔形連接, b) 在本質上垂直的方向上將毛細管(11)升高預定 距離D1, c) 橫向和向下地移動毛細管(1 1 ),以便彎曲引線( 4 )並將引線壓向楔形連接, d) 升高毛細管(11)並移動毛細管(11),以便形成 引線弧(5 )並將引線(4 )接合至第二連接點(7 ),和 e )扯斷引線(4 )。 2. 如申請專利範圍第1項之方法,其中在步驟d之後,在 要被製作的下一個引線弧的引線方向上移動毛細管(Π ),以便對準伸出毛細管(1 1 )的引線(4 )的端部(10 )° 3. 如申請專利範圍第1或2項之方法,其中在步驟c中, 沿著本質上圓形的路徑段進行毛細管(11)的移動。 -16-
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US4437604A (en) * | 1982-03-15 | 1984-03-20 | Kulicke & Soffa Industries, Inc. | Method of making fine wire interconnections |
JPH03289149A (ja) | 1990-04-05 | 1991-12-19 | Matsushita Electric Ind Co Ltd | ワイヤボンディング方法 |
US5111989A (en) * | 1991-09-26 | 1992-05-12 | Kulicke And Soffa Investments, Inc. | Method of making low profile fine wire interconnections |
US6012625A (en) * | 1995-03-10 | 2000-01-11 | Fraunhofer-Gesellschaft Zur Forderungder Angewandten Forschung E.V. | Process and device for forming raised metallised contacts |
JP2002280414A (ja) * | 2001-03-22 | 2002-09-27 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
WO2002082527A1 (en) | 2001-04-05 | 2002-10-17 | Stmicroelectronics Pte Ltd | Method of forming electrical connections |
US20030222338A1 (en) * | 2002-01-04 | 2003-12-04 | Sandisk Corporation | Reverse wire bonding techniques |
US7229906B2 (en) * | 2002-09-19 | 2007-06-12 | Kulicke And Soffa Industries, Inc. | Method and apparatus for forming bumps for semiconductor interconnections using a wire bonding machine |
JP2004172477A (ja) * | 2002-11-21 | 2004-06-17 | Kaijo Corp | ワイヤループ形状、そのワイヤループ形状を備えた半導体装置、ワイヤボンディング方法及び半導体製造装置 |
JP4021378B2 (ja) | 2003-06-27 | 2007-12-12 | 株式会社新川 | ワイヤボンディング方法 |
KR100536898B1 (ko) * | 2003-09-04 | 2005-12-16 | 삼성전자주식회사 | 반도체 소자의 와이어 본딩 방법 |
US7494042B2 (en) * | 2003-10-02 | 2009-02-24 | Asm Technology Singapore Pte. Ltd. | Method of forming low wire loops and wire loops formed using the method |
JP2005159267A (ja) * | 2003-10-30 | 2005-06-16 | Shinkawa Ltd | 半導体装置及びワイヤボンディング方法 |
TWI248186B (en) * | 2004-01-09 | 2006-01-21 | Unaxis Internat Tranding Ltd | Method for producing a wedge-wedge wire connection |
JP3946730B2 (ja) * | 2004-04-26 | 2007-07-18 | 株式会社カイジョー | ボンディングワイヤのループ形状及びそのループ形状を備えた半導体装置並びにワイヤボンディング方法 |
JP4215693B2 (ja) * | 2004-08-16 | 2009-01-28 | 株式会社新川 | ワイヤボンディング方法 |
-
2006
- 2006-03-30 CH CH00543/06A patent/CH697970B1/de not_active IP Right Cessation
-
2007
- 2007-03-14 DE DE102007013100A patent/DE102007013100A1/de not_active Withdrawn
- 2007-03-19 SG SG200702068-8A patent/SG136090A1/en unknown
- 2007-03-22 KR KR1020070027936A patent/KR20070098542A/ko not_active Application Discontinuation
- 2007-03-28 US US11/729,021 patent/US7741208B2/en not_active Expired - Fee Related
- 2007-03-29 TW TW096110964A patent/TWI345501B/zh not_active IP Right Cessation
- 2007-03-29 MY MYPI20070500A patent/MY142142A/en unknown
- 2007-03-30 JP JP2007095023A patent/JP2007273991A/ja active Pending
- 2007-03-30 CN CN2007100919548A patent/CN101276769B/zh not_active Expired - Fee Related
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2008
- 2008-10-23 HK HK08111677.9A patent/HK1119833A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CH697970B1 (de) | 2009-04-15 |
DE102007013100A1 (de) | 2007-10-11 |
SG136090A1 (en) | 2007-10-29 |
KR20070098542A (ko) | 2007-10-05 |
HK1119833A1 (en) | 2009-03-13 |
MY142142A (en) | 2010-09-30 |
US7741208B2 (en) | 2010-06-22 |
US20070231959A1 (en) | 2007-10-04 |
JP2007273991A (ja) | 2007-10-18 |
TW200800452A (en) | 2008-01-01 |
CN101276769B (zh) | 2011-05-04 |
CN101276769A (zh) | 2008-10-01 |
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