TW201248939A - Light emitting device, light emitting device package, and light unit - Google Patents

Light emitting device, light emitting device package, and light unit Download PDF

Info

Publication number
TW201248939A
TW201248939A TW101103531A TW101103531A TW201248939A TW 201248939 A TW201248939 A TW 201248939A TW 101103531 A TW101103531 A TW 101103531A TW 101103531 A TW101103531 A TW 101103531A TW 201248939 A TW201248939 A TW 201248939A
Authority
TW
Taiwan
Prior art keywords
light
semiconductor layer
conductive semiconductor
layer
emitting device
Prior art date
Application number
TW101103531A
Other languages
English (en)
Chinese (zh)
Inventor
Tae-Jin Kim
Q-Han Park
Original Assignee
Lg Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020110048694A external-priority patent/KR20120130617A/ko
Priority claimed from KR1020110064597A external-priority patent/KR20130007233A/ko
Application filed by Lg Innotek Co Ltd filed Critical Lg Innotek Co Ltd
Publication of TW201248939A publication Critical patent/TW201248939A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Led Devices (AREA)
TW101103531A 2011-05-23 2012-02-03 Light emitting device, light emitting device package, and light unit TW201248939A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110048694A KR20120130617A (ko) 2011-05-23 2011-05-23 발광 소자, 발광 소자 패키지, 및 라이트 유닛
KR1020110064597A KR20130007233A (ko) 2011-06-30 2011-06-30 발광소자 및 이를 포함하는 조명시스템

Publications (1)

Publication Number Publication Date
TW201248939A true TW201248939A (en) 2012-12-01

Family

ID=45528964

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101103531A TW201248939A (en) 2011-05-23 2012-02-03 Light emitting device, light emitting device package, and light unit

Country Status (5)

Country Link
US (1) US20120299047A1 (enExample)
EP (1) EP2528114A3 (enExample)
JP (1) JP2012244158A (enExample)
CN (1) CN102800772A (enExample)
TW (1) TW201248939A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI552378B (zh) * 2014-03-07 2016-10-01 隆達電子股份有限公司 發光二極體晶片
US9831384B2 (en) 2013-04-25 2017-11-28 Epistar Corporation Light emitting device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103117345A (zh) * 2013-01-31 2013-05-22 武汉迪源光电科技有限公司 一种发光二极管
JP6171623B2 (ja) * 2013-06-27 2017-08-02 日本ゼオン株式会社 ゴム積層体
JP6167692B2 (ja) * 2013-06-27 2017-07-26 日本ゼオン株式会社 ゴム積層体
JP6094819B2 (ja) 2013-12-13 2017-03-15 ウシオ電機株式会社 半導体発光素子及びその製造方法
WO2018133940A1 (en) * 2017-01-19 2018-07-26 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic element
CN106992233A (zh) * 2017-04-13 2017-07-28 聚灿光电科技股份有限公司 反极性紫外led外延结构及其制备方法
US10720751B2 (en) * 2017-09-27 2020-07-21 Advanced Semiconductor Engineering, Inc. Optical package structure, optical module, and method for manufacturing the same
CN114628559B (zh) * 2022-03-21 2025-04-29 惠州华星光电显示有限公司 发光二极管、发光基板以及显示装置

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
US5814839A (en) * 1995-02-16 1998-09-29 Sharp Kabushiki Kaisha Semiconductor light-emitting device having a current adjusting layer and a uneven shape light emitting region, and method for producing same
JP3802424B2 (ja) * 2002-01-15 2006-07-26 株式会社東芝 半導体発光素子及びその製造方法
JP4366522B2 (ja) * 2002-11-29 2009-11-18 信越半導体株式会社 発光素子
JP4092658B2 (ja) * 2004-04-27 2008-05-28 信越半導体株式会社 発光素子の製造方法
US7335920B2 (en) * 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
US20060204865A1 (en) * 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices
DE102005033005A1 (de) * 2005-07-14 2007-01-18 Osram Opto Semiconductors Gmbh Optoelektronischer Chip
KR100610639B1 (ko) * 2005-07-22 2006-08-09 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자 및 그 제조방법
TWI336965B (en) * 2006-06-16 2011-02-01 High Power Optoelectronics Inc Semiconductor light emitting device and method of fabricating the same
KR101289230B1 (ko) * 2007-07-23 2013-07-29 엘지이노텍 주식회사 발광 소자 및 그 제조방법
US8461613B2 (en) * 2008-05-27 2013-06-11 Interlight Optotech Corporation Light emitting device
JP5105310B2 (ja) * 2008-08-19 2012-12-26 信越半導体株式会社 発光素子及びその製造方法
JP5282503B2 (ja) * 2008-09-19 2013-09-04 日亜化学工業株式会社 半導体発光素子
US8008683B2 (en) * 2008-10-22 2011-08-30 Samsung Led Co., Ltd. Semiconductor light emitting device
JP5343225B2 (ja) * 2008-12-16 2013-11-13 スタンレー電気株式会社 Ｉｉ−ｖｉ族またはｉｉｉ−ｖ族化合物系半導体発光素子用エピタキシャルウエハ、および、その製造方法
KR101072034B1 (ko) * 2009-10-15 2011-10-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101028277B1 (ko) * 2010-05-25 2011-04-11 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 라이트 유닛
JP5087672B2 (ja) * 2010-12-13 2012-12-05 株式会社東芝 半導体発光素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9831384B2 (en) 2013-04-25 2017-11-28 Epistar Corporation Light emitting device
TWI552378B (zh) * 2014-03-07 2016-10-01 隆達電子股份有限公司 發光二極體晶片

Also Published As

Publication number Publication date
EP2528114A3 (en) 2014-07-09
EP2528114A2 (en) 2012-11-28
US20120299047A1 (en) 2012-11-29
JP2012244158A (ja) 2012-12-10
CN102800772A (zh) 2012-11-28

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