JP2012244158A - 発光素子、発光素子パッケージ及びライトユニット - Google Patents
発光素子、発光素子パッケージ及びライトユニット Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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Abstract
【解決手段】一実施例による発光素子は、第1導電型半導体層、前記第1導電型半導体層上の活性層、前記活性層上の第2導電型半導体層を有する発光構造物と、前記第1導電型半導体層に電気的に接続された第1電極と、前記第2導電型半導体層に電気的に接続された第2電極層とを備え、前記発光構造物の表面は互いに異なる方向の曲率を有する複数個の第1面と第2面が互いに交代に配置される。
【選択図】図1
Description
発光構造物10の上には、保護層90が更に配置されてもよい。保護層90は、酸化物又は窒化物で具現されてもよい。保護層90は、例えば、SiO2,SiOx,SiOxNy,Si3N4,Al2O3のような透光性及び絶縁性を有する材質から形成されてもよい。保護層90は、発光構造物10の側面に提供されてもよい。また、保護層90は、発光構造物10の側面だけでなく上部にも提供されてもよい。
それでは、図4乃至図11を参照して、一実施例による発光素子の製造方法を説明する。
例として、第1導電型半導体層11が第1導電型ドーパントとしてn型ドーパントが添加されたn型半導体層として形成され、第2導電型半導体層13が第2導電型ドーパントとしてp型ドーパントが添加されたp型半導体層として形成されてもよい。また、第1導電型半導体層11がp型半導体層として形成され、第2導電型半導体層13がn型半導体層として形成されてもよい。
電流遮断層30は電気絶縁性を有するか、発光構造物10とショットキー接触を形成する材質を利用して形成されてもよい。電流遮断層30は、酸化物、窒化物又は金属で形成されてもよい。電流遮断層30は、例えば、SiO2,SiOx,SiOxNy,Si3N4,Al2O3,TiOx,Ti,Al,Crのうちの少なくとも1つを含んでもよい。アイソレーション層80は、例えば、電気絶縁性を有する材質又は発光構造物10に比べ低い電気伝導性を有する材質で形成されてもよい。アイソレーション層80は、例えば、酸化物又は窒化物で具現されてもよい。例えば、アイソレーション層80は、SiO2,SixOy,Si3N4,SixNy,SiOxNy,Al2O3,TiO2,ITO,AZO,ZnOで形成される群から少なくとも1つが選択されて形成されてもよい。また、アイソレーション層80は、前記電流遮断層30のような物質で形成されてもよく、また互いに異なる物質で形成されてもよい。アイソレーション層80は、チャンネル層として称されてもよい。
反射電極50は、高反射率を有する金属材質で形成されてもよい。例えば、反射電極50は、Ag,Ni,Al,Rh,Pd,Ir,Ru,Mg,Zn,Pt,Cu,Au,Hfのうちの少なくとも1つを含む金属又は合金で形成されてもよい。また、反射電極50は、金属又は合金とITO,IZO,IZTO,IAZO,IGZO,IGTO,ATO,ATOなどの透光性伝導性物質を利用して多層に形成されてもよい。例えば、本実施例における前記反射電極50は、Ag,Al,Ag−Pd−Cu合金又はAg−Cu合金のうち少なくともいずれか一つを含んでもよい。
次に、発光構造物10から基板5を除去する。一つの例として、基板5はレーザリフトオフ(LLO:Laser Lift Off)工程によって除去されてもよい。レーザリフトオフ工程は、基板5の下面にレーザを照射し基板5と発光構造物10を互いに剥離する工程である。
光学シート1051は、表示パネル1051と導光板1041との間に配置され、少なくとも一枚の透光性シートを含む。光学シート1051は、例えば拡散シート、水平及び垂直プリズムシート及び輝度強化シートなどのようなシートのうちの少なくとも1つを含んでもよい。拡散シートは入射される光を拡散させ、水平又は/及び垂直プリズムシートは入射される光を表示領域として集光させ、輝度強化シートは損失される光を再使用して輝度を向上させる。また、表示パネル1061の上には保護シートが配置されてもよく、これに対して限ることはない。
11 第1導電型半導体層
12 活性層
13 第2導電型半導体層
20 電極
30 電流遮断層
40 オーミック接触層
50 反射電極
60 ボンディング層
70 伝導性支持部材
80 アイソレーション層
90 保護層
Claims (22)
- 第1導電型半導体層、前記第1導電型半導体層の下の活性層、前記活性層の下の第2導電型半導体層を有する発光構造物と、
前記第1導電型半導体層に電気的に接続された第1電極と、
前記第2導電型半導体層に電気的に接続された第2電極と
を備え、
前記第1導電型半導体層の上部表面は連続的な勾配変化を有する曲面を有し、前記第1導電型半導体層の上部表面に凹凸が提供された発光素子。 - 前記発光構造物の表面は、互いに異なる方向の曲率を有する複数個の第1面と第2面が互いに交代に配置されている、請求項1に記載の発光素子。
- 前記第1面及び前記第2面のうちの少なくとも1つの表面には光抽出パターンが形成されている、請求項2に記載の発光素子。
- 前記第1面及び前記第2面は、前記第1導電型半導体層の表面に配置されている、請求項2又は3に記載の発光素子。
- 第1面及び前記第2面のうちの少なくとも1つはマイクロレンズタイプである、請求項2乃至4のいずれかに記載の発光素子。
- 前記第1面及び前記第2面のうちの少なくとも1つは15乃至25マイクロメートルの幅を有する、請求項2乃至5のいずれかに記載の発光素子。
- 前記第1面と前記第2面の幅が同じである、請求項2乃至6のいずれかに記載の発光素子。
- 前記第1面と第2面の表面は互いに対称を成す、請求項2乃至7のいずれかに記載の発光素子。
- 前記第1面は陰刻形状であり、前記第2面は陽刻形状である、請求項2乃至8のいずれかに記載の発光素子。
- 前記第1面と前記第2面の間にフラット(flat)な第3面を更に有する、請求項2乃至9のいずれかに記載の発光素子。
- 前記第1導電型半導体層の上部表面は第1方向の断面上部が連続的な勾配変化を有する曲線を有し、第2方向の断面上部が連続的な勾配変化を有する曲線を有する、請求項1に記載の発光素子。
- 前記第1導電型半導体層の上部表面は第1方向の断面上部が連続的な勾配変化を有する曲線を有し、第2方向の断面上部が互いに異なる勾配を有する直線を有する、請求項1又は11に記載の発光素子。
- 前記第1導電型半導体層の上部表面は、所定形状の反復された曲面を含む請求項1乃至3のいずれかに記載の発光素子。
- 前記第2導電型半導体層の下に配置された電流遮断層を更に備える、請求項1に記載の発光素子。
- 前記第2導電型半導体層と前記第2電極との間、及び前記電流遮断層と前記第2電極との間に配置されたオーミック接触層を更に備える、請求項14に記載の発光素子。
- 前記電流遮断層と前記第1電極は、垂直方向に少なくとも一部領域が重畳された、請求項15に記載の発光素子。
- 前記電流遮断層は、絶縁性を有するか前記発光構造物とショットキー接触する、請求項15又は16に記載の発光素子。
- 前記凹凸は、高さ又は周期が0.8乃至1.2マイクロメートルである、請求項1に記載の発光素子。
- 前記第1電極は、前記第1導電型半導体層に接触された、請求項1に記載の発光素子。
- 前記第2電極は、前記第2導電型半導体層に接触された、請求項1に記載の発光素子。
- 前記第2導電型半導体層の下に配置された反射電極を更に備える、請求項1に記載の発光素子。
- 請求項1乃至21のいずれかに記載の発光素子を備える照明システム。
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KR1020110048694A KR20120130617A (ko) | 2011-05-23 | 2011-05-23 | 발광 소자, 발광 소자 패키지, 및 라이트 유닛 |
KR1020110064597A KR20130007233A (ko) | 2011-06-30 | 2011-06-30 | 발광소자 및 이를 포함하는 조명시스템 |
KR10-2011-0064597 | 2011-06-30 |
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US (1) | US20120299047A1 (ja) |
EP (1) | EP2528114A3 (ja) |
JP (1) | JP2012244158A (ja) |
CN (1) | CN102800772A (ja) |
TW (1) | TW201248939A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015009384A (ja) * | 2013-06-27 | 2015-01-19 | 日本ゼオン株式会社 | ゴム積層体 |
JP2015009385A (ja) * | 2013-06-27 | 2015-01-19 | 日本ゼオン株式会社 | ゴム積層体 |
US9437778B2 (en) | 2013-12-13 | 2016-09-06 | Ushio Denki Kabushiki Kaisha | Semiconductor light-emitting element and method for producing the same |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103117345A (zh) * | 2013-01-31 | 2013-05-22 | 武汉迪源光电科技有限公司 | 一种发光二极管 |
TWI604632B (zh) | 2013-04-25 | 2017-11-01 | 晶元光電股份有限公司 | 發光二極體裝置 |
TWI552378B (zh) * | 2014-03-07 | 2016-10-01 | 隆達電子股份有限公司 | 發光二極體晶片 |
WO2018133940A1 (en) * | 2017-01-19 | 2018-07-26 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic element |
CN106992233A (zh) * | 2017-04-13 | 2017-07-28 | 聚灿光电科技股份有限公司 | 反极性紫外led外延结构及其制备方法 |
US10720751B2 (en) * | 2017-09-27 | 2020-07-21 | Advanced Semiconductor Engineering, Inc. | Optical package structure, optical module, and method for manufacturing the same |
CN114628559A (zh) * | 2022-03-21 | 2022-06-14 | 惠州华星光电显示有限公司 | 发光二极管、发光基板以及显示装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004186268A (ja) * | 2002-11-29 | 2004-07-02 | Shin Etsu Handotai Co Ltd | 発光素子 |
JP2005317663A (ja) * | 2004-04-27 | 2005-11-10 | Shin Etsu Handotai Co Ltd | 発光素子の製造方法及び発光素子 |
JP2007036240A (ja) * | 2005-07-22 | 2007-02-08 | Samsung Electro Mech Co Ltd | 垂直構造の窒化ガリウム系発光ダイオード素子、及びその製造方法 |
JP2007335874A (ja) * | 2006-06-16 | 2007-12-27 | High Power Optoelectronics Inc | 半導体発光素子および同素子の製造方法 |
JP2010050157A (ja) * | 2008-08-19 | 2010-03-04 | Shin Etsu Handotai Co Ltd | 発光素子及びその製造方法 |
JP2010147056A (ja) * | 2008-12-16 | 2010-07-01 | Stanley Electric Co Ltd | Ii−vi族またはiii−v族化合物系半導体発光素子用エピタキシャルウエハ、および、その製造方法 |
JP2011086909A (ja) * | 2009-10-15 | 2011-04-28 | Lg Innotek Co Ltd | 半導体発光素子 |
JP2012129234A (ja) * | 2010-12-13 | 2012-07-05 | Toshiba Corp | 半導体発光素子 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5814839A (en) * | 1995-02-16 | 1998-09-29 | Sharp Kabushiki Kaisha | Semiconductor light-emitting device having a current adjusting layer and a uneven shape light emitting region, and method for producing same |
JP3802424B2 (ja) * | 2002-01-15 | 2006-07-26 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
US7335920B2 (en) * | 2005-01-24 | 2008-02-26 | Cree, Inc. | LED with current confinement structure and surface roughening |
US20060204865A1 (en) * | 2005-03-08 | 2006-09-14 | Luminus Devices, Inc. | Patterned light-emitting devices |
DE102005033005A1 (de) * | 2005-07-14 | 2007-01-18 | Osram Opto Semiconductors Gmbh | Optoelektronischer Chip |
KR101289230B1 (ko) * | 2007-07-23 | 2013-07-29 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
US8461613B2 (en) * | 2008-05-27 | 2013-06-11 | Interlight Optotech Corporation | Light emitting device |
US8008683B2 (en) * | 2008-10-22 | 2011-08-30 | Samsung Led Co., Ltd. | Semiconductor light emitting device |
KR101028277B1 (ko) * | 2010-05-25 | 2011-04-11 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 라이트 유닛 |
-
2012
- 2012-01-19 EP EP20120151758 patent/EP2528114A3/en not_active Withdrawn
- 2012-01-31 US US13/362,340 patent/US20120299047A1/en not_active Abandoned
- 2012-02-03 TW TW101103531A patent/TW201248939A/zh unknown
- 2012-02-07 JP JP2012024435A patent/JP2012244158A/ja active Pending
- 2012-03-23 CN CN2012100855621A patent/CN102800772A/zh active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004186268A (ja) * | 2002-11-29 | 2004-07-02 | Shin Etsu Handotai Co Ltd | 発光素子 |
JP2005317663A (ja) * | 2004-04-27 | 2005-11-10 | Shin Etsu Handotai Co Ltd | 発光素子の製造方法及び発光素子 |
JP2007036240A (ja) * | 2005-07-22 | 2007-02-08 | Samsung Electro Mech Co Ltd | 垂直構造の窒化ガリウム系発光ダイオード素子、及びその製造方法 |
JP2007335874A (ja) * | 2006-06-16 | 2007-12-27 | High Power Optoelectronics Inc | 半導体発光素子および同素子の製造方法 |
JP2010050157A (ja) * | 2008-08-19 | 2010-03-04 | Shin Etsu Handotai Co Ltd | 発光素子及びその製造方法 |
JP2010147056A (ja) * | 2008-12-16 | 2010-07-01 | Stanley Electric Co Ltd | Ii−vi族またはiii−v族化合物系半導体発光素子用エピタキシャルウエハ、および、その製造方法 |
JP2011086909A (ja) * | 2009-10-15 | 2011-04-28 | Lg Innotek Co Ltd | 半導体発光素子 |
JP2012129234A (ja) * | 2010-12-13 | 2012-07-05 | Toshiba Corp | 半導体発光素子 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015009384A (ja) * | 2013-06-27 | 2015-01-19 | 日本ゼオン株式会社 | ゴム積層体 |
JP2015009385A (ja) * | 2013-06-27 | 2015-01-19 | 日本ゼオン株式会社 | ゴム積層体 |
US9437778B2 (en) | 2013-12-13 | 2016-09-06 | Ushio Denki Kabushiki Kaisha | Semiconductor light-emitting element and method for producing the same |
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TW201248939A (en) | 2012-12-01 |
EP2528114A2 (en) | 2012-11-28 |
US20120299047A1 (en) | 2012-11-29 |
CN102800772A (zh) | 2012-11-28 |
EP2528114A3 (en) | 2014-07-09 |
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