TW201219117A - Apparatus - Google Patents
Apparatus Download PDFInfo
- Publication number
- TW201219117A TW201219117A TW100130878A TW100130878A TW201219117A TW 201219117 A TW201219117 A TW 201219117A TW 100130878 A TW100130878 A TW 100130878A TW 100130878 A TW100130878 A TW 100130878A TW 201219117 A TW201219117 A TW 201219117A
- Authority
- TW
- Taiwan
- Prior art keywords
- nozzle head
- cylindrical
- precursor
- substrate
- tubular
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20105902A FI20105902A0 (fi) | 2010-08-30 | 2010-08-30 | Laite |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201219117A true TW201219117A (en) | 2012-05-16 |
Family
ID=42669406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100130878A TW201219117A (en) | 2010-08-30 | 2011-08-29 | Apparatus |
Country Status (5)
Country | Link |
---|---|
CN (1) | CN103080374B (fr) |
DE (1) | DE112011102856B4 (fr) |
FI (1) | FI20105902A0 (fr) |
TW (1) | TW201219117A (fr) |
WO (1) | WO2012028779A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI125341B (en) * | 2012-07-09 | 2015-08-31 | Beneq Oy | Apparatus and method for treating substrate |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4597986A (en) * | 1984-07-31 | 1986-07-01 | Hughes Aircraft Company | Method for photochemical vapor deposition |
JP3103186B2 (ja) * | 1992-03-19 | 2000-10-23 | 富士通株式会社 | 原子層エピタキシー装置および原子層エピタキシー法 |
MX9303141A (es) | 1992-05-28 | 1994-04-29 | Polar Materials Inc | Metodos y aparatos para depositar recubrimientos de barrera. |
JP2004014953A (ja) * | 2002-06-10 | 2004-01-15 | Tokyo Electron Ltd | 処理装置および処理方法 |
US20050172897A1 (en) * | 2004-02-09 | 2005-08-11 | Frank Jansen | Barrier layer process and arrangement |
JP4734317B2 (ja) * | 2005-02-17 | 2011-07-27 | 株式会社日立国際電気 | 基板処理方法および基板処理装置 |
KR20060103640A (ko) * | 2005-03-28 | 2006-10-04 | 삼성전자주식회사 | 반도체 제조장치 |
RU2368555C1 (ru) | 2005-05-27 | 2009-09-27 | Кирин Бир Кабусики Кайся | Устройство для изготовления пластикового контейнера с газовым барьером, способ изготовления данного контейнера и контейнер |
JP2007111678A (ja) * | 2005-10-24 | 2007-05-10 | Sekisui Chem Co Ltd | 線状被処理物用プラズマ処理装置 |
US20090304924A1 (en) * | 2006-03-03 | 2009-12-10 | Prasad Gadgil | Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films |
US8043432B2 (en) * | 2007-02-12 | 2011-10-25 | Tokyo Electron Limited | Atomic layer deposition systems and methods |
JP2010073822A (ja) * | 2008-09-17 | 2010-04-02 | Tokyo Electron Ltd | 成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体 |
US20110076421A1 (en) * | 2009-09-30 | 2011-03-31 | Synos Technology, Inc. | Vapor deposition reactor for forming thin film on curved surface |
-
2010
- 2010-08-30 FI FI20105902A patent/FI20105902A0/fi not_active Application Discontinuation
-
2011
- 2011-08-29 DE DE112011102856.3T patent/DE112011102856B4/de active Active
- 2011-08-29 WO PCT/FI2011/050747 patent/WO2012028779A1/fr active Application Filing
- 2011-08-29 TW TW100130878A patent/TW201219117A/zh unknown
- 2011-08-29 CN CN201180041762.0A patent/CN103080374B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
DE112011102856B4 (de) | 2023-03-23 |
WO2012028779A1 (fr) | 2012-03-08 |
CN103080374B (zh) | 2016-04-13 |
CN103080374A (zh) | 2013-05-01 |
FI20105902A0 (fi) | 2010-08-30 |
DE112011102856T5 (de) | 2013-08-08 |
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