TW201219117A - Apparatus - Google Patents

Apparatus Download PDF

Info

Publication number
TW201219117A
TW201219117A TW100130878A TW100130878A TW201219117A TW 201219117 A TW201219117 A TW 201219117A TW 100130878 A TW100130878 A TW 100130878A TW 100130878 A TW100130878 A TW 100130878A TW 201219117 A TW201219117 A TW 201219117A
Authority
TW
Taiwan
Prior art keywords
nozzle head
cylindrical
precursor
substrate
tubular
Prior art date
Application number
TW100130878A
Other languages
English (en)
Chinese (zh)
Inventor
Tapani Alasaarela
Pekka Soininen
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Publication of TW201219117A publication Critical patent/TW201219117A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW100130878A 2010-08-30 2011-08-29 Apparatus TW201219117A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20105902A FI20105902A0 (fi) 2010-08-30 2010-08-30 Laite

Publications (1)

Publication Number Publication Date
TW201219117A true TW201219117A (en) 2012-05-16

Family

ID=42669406

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100130878A TW201219117A (en) 2010-08-30 2011-08-29 Apparatus

Country Status (5)

Country Link
CN (1) CN103080374B (fr)
DE (1) DE112011102856B4 (fr)
FI (1) FI20105902A0 (fr)
TW (1) TW201219117A (fr)
WO (1) WO2012028779A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI125341B (en) * 2012-07-09 2015-08-31 Beneq Oy Apparatus and method for treating substrate

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4597986A (en) * 1984-07-31 1986-07-01 Hughes Aircraft Company Method for photochemical vapor deposition
JP3103186B2 (ja) * 1992-03-19 2000-10-23 富士通株式会社 原子層エピタキシー装置および原子層エピタキシー法
MX9303141A (es) 1992-05-28 1994-04-29 Polar Materials Inc Metodos y aparatos para depositar recubrimientos de barrera.
JP2004014953A (ja) * 2002-06-10 2004-01-15 Tokyo Electron Ltd 処理装置および処理方法
US20050172897A1 (en) * 2004-02-09 2005-08-11 Frank Jansen Barrier layer process and arrangement
JP4734317B2 (ja) * 2005-02-17 2011-07-27 株式会社日立国際電気 基板処理方法および基板処理装置
KR20060103640A (ko) * 2005-03-28 2006-10-04 삼성전자주식회사 반도체 제조장치
RU2368555C1 (ru) 2005-05-27 2009-09-27 Кирин Бир Кабусики Кайся Устройство для изготовления пластикового контейнера с газовым барьером, способ изготовления данного контейнера и контейнер
JP2007111678A (ja) * 2005-10-24 2007-05-10 Sekisui Chem Co Ltd 線状被処理物用プラズマ処理装置
US20090304924A1 (en) * 2006-03-03 2009-12-10 Prasad Gadgil Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films
US8043432B2 (en) * 2007-02-12 2011-10-25 Tokyo Electron Limited Atomic layer deposition systems and methods
JP2010073822A (ja) * 2008-09-17 2010-04-02 Tokyo Electron Ltd 成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体
US20110076421A1 (en) * 2009-09-30 2011-03-31 Synos Technology, Inc. Vapor deposition reactor for forming thin film on curved surface

Also Published As

Publication number Publication date
DE112011102856B4 (de) 2023-03-23
WO2012028779A1 (fr) 2012-03-08
CN103080374B (zh) 2016-04-13
CN103080374A (zh) 2013-05-01
FI20105902A0 (fi) 2010-08-30
DE112011102856T5 (de) 2013-08-08

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