201219117 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種裝置，用於處理一基底之至少部 分圓柱狀表面’或使與一圓柱狀表面一致之一▲底之—表 面受至少一第一前驅物及一第二前驅物之連續表面反應而 對於基底之表面進行處理，特別是根據申請專利範圍第工 項之前言之一裝置。 【先前技術】 於習知技術之數種裝置類型中，在根據原子層沈積 (atomic layer deposition method, ALD)之原理下，利用 这些裝置及喷嘴頭使一基底之一表面受至少一第一前驅物 及一第二前驅物之連續表面反應而對基底之表面進行處 理。於ALD應用中，一般是利用分離階段將兩氣體前驅物 引入ALD反應器中。氣體前驅物有效地與基底之表面進行 反應下形成一單一原子層之沈積。一般而言，前驅物階段 疋緊接於一清除階段之後或與清除階段以分離方式進行， 並且在引入其它不同前驅物之前需藉由前驅物階段去除基 底表面上之過量前驅物。因此，一 ALD製程需要依序交替 方式將複數前驅物流動至基底表面。此重覆的交替表面反 應順序及介於其間之清除階段即為一般ALD沈積循環。 習知技術中是在大型處理室内對於大批量圓柱狀物件 進行塗覆及處理，其中前驅物是以連續交錯脈衝輪送至大 型處理室中，並且必須以非常大批量圓柱狀物件處理下才 201219117 t獲得具經濟性之高生產力。•然而，因為氣流及溫度之羞 下’在大批量圓柱狀物件的處理過程中不易達成最佳前 ㈣之使用’並且在某些原子層沈積製程中亦無法在所有 批次内順利達到理想厚度均句性。再者，由於基底處理過 料之每-處理室壁面上亦會具有材料的生長，批次處理 =:浪費及處理室壁面之清潔問題。仍有許多不同種 類的喷嘴頭可用於局部處理基底之—Un這此習 2嘴頭是無法處理圓柱形物件，這些習知喷嘴頭僅能用 =平基底或平面基底。這些習知喷嘴頭是利用快速前 w動方式於基底表面上方進行多次掃描。然而，用於製 ==層之習知技術的缺點在於其移動機構之前後移 動過程中產…機械力且喷嘴頭必須抵抗此機械力，當 移動機構對已停止於末端位罾夕 產生機械力更是特：因:::::次加速移動時所 損壞。 a此-易造成裝置及嘴嘴頌之 【發明内容】 ^發明之目的在於提供—種裝置，藉此以解決上述習 的問題。依照申請專利範圍第1項之裝置的特㈣ ::達成本發明之目的，其特徵在於:經設置之二 基底沿著圓柱形喷嘴頭之中心軸方向彼此相對移動。 附屬項中對於本發明之較㈣施例進行說明。 本= 冓想在於提供具有圓柱、套筒或類似 ―貫質圓柱形噴嘴頭1柱形㈣頭包括—“ 201219117 具有一輸出面之一實質圓周邊 輸出面用於供應前驅物。 喷嘴頭可為一中空圓柱，並且輪出面可為中空圓柱之内表 面，或輸出面可為中空圓柱或一實心圓柱之外表面。可替 代地，喷嘴頭可為-實心圓柱，並且輪出面可為圓柱之外 表面。喷嘴頭之輸出面連續包括第一前驅物區域及第二前 驅物區域’並且喷嘴頭之輸出面亦可選擇性地包括複數清 除氣體區域及複數排放區域’這些清除氣體區域及排放區 域位在前驅物區域之間。設置在喷嘴頭之輸出面之前驅物 區域、清除氣體區域及排放區域沿著噴嘴頭之圓周邊交錯 連續設置。前㈣n域及清除氣體區域可提供做為用於供 應前驅物及清除氣體之喷嘴。噴嘴頭及基底更可沿著圓柱 形喷嘴頭之中心軸方向彼此相對移動’並且圓柱狀基底及 噴嘴頭亦可繞著圓柱形喷嘴頭之中心軸迴轉。喷嘴頭用於 處理至少部分圓柱狀基底或與至少部分圓柱狀基底載具之 表面致之一基底。本發明之裝置亦用於沿著喷嘴頭之 中心軸方向移動一圓柱形基底或圓柱狀基底載具。可替代 地，喷嘴頭本身沿著喷嘴頭之中心軸方向移動。再者，喷 嘴頭及/或基底.可繞著嘴嘴頭之中心軸而彼此相對迴轉。因 此，於喷嘴頭及基底彼此相對下，一基底可進行轉移處理 且亦可選擇方式進行迴轉處理。 本發明之裝置之優點在於圓柱形基底或表面之處理過 程中不會造成大量材料浪費及清潔問題。因此，本發明可 對於大量圓柱形基底或表面進行處理以達到經濟效益。再 者，本發明利用迴轉運動使得基底之表面均勻受到前驅物 6 201219117 的作用。相較於前後移動’利用迴 明之裝置所作用之應力及力量，並且迴:：：少：到本發 平均速度高於前後移動之平均迷度。因 所此承受之 對圓柱形基底及圓柱形表面所提供方法可=由本發明斜 問題。 了解決習知技術之 【實施方式】 第i圖表示本發明之裝置之一實施例 處理至少部分圓柱狀表 "於 2。於箆“ "之裝置包括-喷嘴頭 於第1圖中’噴嘴頭2係為 壁之一中办Ilk ^ 甲。軸且實質圓周邊 , n瓊璧具有一内表面及一外表面。 於第1圖之實施例中’月邊縣 _ K肖邊壁之内表面係為喷嘴頭2之- 輸出面，前驅物經由噴喈 田赁嘴頭2之輸出面所供應，使一基底 之一表面受前驅物之祚田 ,^ , 用。如第1圖所示，喷嘴頭2用於 處理一圓柱狀基底6之—冰 外表面4’使得圓柱狀基底6可 移動通過中空喷嘴頭2 。 ^ 一第一前驅物及一第二前驅物係 可為應用在原子層沈積法之任何氣態前驅物。再者，電漿 亦做為前驅物。—清除氣體係可為某些鈍氣（例如： 氮氣電漿或類似物。前驅物、清除氣體經由流體連接件 而供給至喷嘴頭2。？]·# ,, ^ L 了替代地，噴嘴頭2具有一或多個前 驅物及/或清除氣體交$ 、 礼11 4益、瓶或類似物，使得前驅物及/或 清除氣體可盥喰喈涵9 „丄 貝方頌2同時移動，藉此配置可減少連接至 移動喷嘴頭2之所需高技術流體連接件之數量。 圓柱狀喷嘴頭2之輪出面具有一或多個第一前驅物區 201219117 域14及一或多個第二前驅物區域16’藉由第—前驅物區 域14使圓柱狀基底6之外表面4受第一前驅物所作用，並 且藉由第二前驅物區域16使圓柱狀基底6之外表面4受第 二前驅物所作用。如第1圖所示，喷嘴頭2包括二第一前 驅物區域14及二第二前驅物區域16,這些第一前驅物區 域14及第二前驅物區域16係於喷嘴頭2之周邊壁方向上 沿著輸出面交替連續設置。當圓柱狀基底6沿著第i圖之 箭頭12繞著縱軸迴轉時，如此使得基底6之外表面4可受 第一前驅物區域14及第二前驅物區域16中之第一前驅物 及第二前驅物所作用。亦需注意的是，喷嘴頭2可繞著中 心軸迴轉，或是圓柱狀基底6及喷嘴頭2可沿著相同或不 同方向進行迴轉。因此，在本發明中之喷嘴頭2及基底可 繞著喷嘴頭2之中心軸、縱軸而彼此相對迴轉。如第i圖 之：頭8所示’本發明之圓柱狀基底6相對於喷嘴頭2而 沿者喷嘴頭2之中心軸方向或圓柱狀基底6之縱向進行轉 移或移動’藉此將圓柱狀基纟6移動通過中空喷嘴頭2。 需注意的是，喷嘴頭2或圓柱狀基底6之任一者可沿著喷 嘴頭2之中〜軸方向進行移動，或是喷嘴頭2及圓柱狀基 底6二者可沿著喷嘴頭2之中心軸進行相同或不同方向的 移動因此’在著噴嘴頭2之中心軸方向所進行之噴嘴 頭2及圓柱狀基底6之相 、 相對迴轉及相對移動下可使基底6 之整個外表面4受到筮 & 又』弟一前驅物及第二前驅物之數次作 用’如此便可在基底6之外击工,L在丨 ^外表面4上製作生長層。圓柱狀 基底6可為管件、桿件、 蠼線、先纖、玻璃預成型件或其 8 201219117 它類似圓柱狀物件。如果為基广“具有 6可利用卷對卷方式自—第—滾輪供應至=基底 過喷，再者，圓柱狀基底亦可為具有 面之物件’此表示圓柱狀基底之圓柱狀表 度，例如彻◦度，度、9。度。本發 何圓柱狀或部分圓柱狀表面。 又限於任 第2圖係根據本發明之裝置之另一實施例之示意圖， 其中喷嘴頭2實質對應於第】圖之喷嘴頭。於本實施例中， 基底7係—致於圓柱狀基底載具9之-外表面5。於第2 圖中之基& 7為-連續條狀基底’並且所設置於之基底7 可為一致於圓柱狀基底載具9或繞於圓柱狀基底载具9之 上。於部分實施例中’經設置之分散基底亦可與圓柱狀基 底載具9之表面5-致或分散基底可結合或貼附於圓柱狀 基底載具9之表面5，並且這些分散基底可為任何撓性或 硬基底。如第2圖所示，於沿著箭頭8方向、喷嘴頭2之 中心轴方向下’藉由噴嘴頭2及圓柱狀基底載具9彼此相 對移動下及藉由喷嘴頭2及圓柱狀基底載具9彼此相對迴 轉下’基底7可被供應至喷嘴頭2。基底7可採用第2圖 所示之螺旋狀方式而貼附於圓柱狀基底載具9之上，或是 藉此方式將基底7覆蓋於圓柱狀基底載具9之整個表面5 上。备圓柱狀基底載具9相對於噴嘴頭2進行移動時，分 別藉由第一前驅物區域及第二前驅物區域使得基底7之表 面3受第一前驅物及第二前驅物之連續表面反應。 於第1、2圖所示之喷嘴頭2為圓周邊壁之内表面上具 9 201219117 有輸出面之中空圓柱。然而，喷嘴頭2亦可藉由在圓柱狀 喷嘴頭之外表面形成有輸出面。在此實施例中，喷嘴頭可 為第1、2圖所示之中空圓柱，或喷嘴頭可為實心圓柱，或 噴嘴頭可為具有一中心軸及形成為輸出面之一外表面之一 中空圓柱，並且於喷嘴頭2之外表面之輸出面具有一或多 個第一前驅物區域及一或多個第二前驅物區域這肽第一 前驅物區域及第二前驅物區域連續沿著周圍外表面方向進 行設置，如同於第卜2圖之内表面之設置方式。當喷嘴頭 2之外表面為輸出面時，本發明之裝置用於處理一中空管 狀或圓柱狀基底之一内表面，如此可將噴嘴 只角頌疋位在基底 之内側。以第1、2圖中所述之相同方式可對於噴嘴頭及基 底進行彼此間之相對移動或迴轉。 於一實施例中之裝置包括-第-圓柱形嘴嘴頭及一第 二中空圓柱形喷嘴頭。第一圓柱形喷嘴通1 + /、有一第一直徑 及一輸出面，輸出面位在第一圓柱形嘴啦 貝％碩之外表面。第 二中空圓柱形喷嘴頭具有一第二直徑及— 輸出面，輸出面 位在第二中空圓柱形喷嘴頭之内表面。筮_ 乐一中空圓柱形喷 嘴頭之第二直徑大於第一圓柱形喷嘴頭 ，<第一直徑，如此 使得第一圓柱形喷嘴頭可設置於第二中办 τ二圓杈形喷嘴頭之 内側。藉由所形成之第一圓柱形噴嘴頭 〈第一直徑及第二 中空圓柱形喷嘴頭之第二直徑，於第—圓 圓枉形噴嘴頭之輸 出面及第二中空圓柱形喷嘴頭之輸出面 L i 夂間具有一間隙。 當一中空管或管件導入第一圓柱形噴嘴 角蹲及第二中空圓柱 形喷嘴頭之間之間隙時，藉此排列可佶 #一中空管或管件 10 201219117 之外表面及内表面同時受到處理。 本發明之裝置可包括一第一移動機構及一第二移動機 構。利用第-移動機構使得管狀或圓柱狀基底6或管狀或 圓柱狀基底栽具9沿著圓柱形喷嘴頭2之中心軸進行移 動。利用第二移動機構使得管狀或圓柱狀基底6或管狀或 圓柱狀基底載具9繞著管狀或圓柱狀基底6或管狀或圓柱 狀基底載具9之中心軸進行迴轉。本發明之裝置亦可包括 或替代性包括一第三移動機構及一第四移動機構。利用第 二移動機構使得圓柱形喷嘴頭2沿著圓柱形噴嘴頭2之中 心轴進行移動。利用第四移動機構使得圓柱形喷嘴頭2繞 著圓柱形喷嘴頭2之中心轴進行迴轉。需特別注意的是， 本發明之裝置可包括一或多個第一移動機構、第二移動機 構、第二移動機構及第四移動機構。於本發明中，喷嘴頭 2及圓柱狀基底6之間或喷嘴頭2及圓柱狀基底載且9之 間係沿著喷嘴頭2之中心軸而彼此相對移動。需注意的 是，移動機構可採用各種習知方式進 構之詳細說明便予以省略。 仃建構’因此移動機 第3圖表示第1、2圖之喷嘴頭2 叶圖。喷嘴頭2之 内表面上具有輸出面，於輪出面上連續 疋、貝巴括以下順序：可 選擇地重覆複數次之一清除氣體區域 一前驅物區域 14、16及一排放區域11。清除氣體 , X 13、前驅物區域 14、16及排放區域11係沿著圓柱形喷嘴 、 項2之周邊方向 而連續交錯設置。如第3圖所示，喷嘴 續包括以下順序：可選擇地重覆複數—之輸出面上連 _ 第一前驅物區 201219117 域Η、一排放區域11、_清除氣體區域13、—第二前驅 物區域16、一排放區域u&—清除氣體區域13。前驅物 、’!由第-刖驅物區域14及第二前驅物區域16所供應使 基底之表面受前驅物之表面反應。清除氣體區域中所供應 2清除氣體及前驅物利用吸取或真空方式經由排放區域進 仃排放。如第3圖所示，前驅物區域14、16可形成為於圓 柱形喷嘴頭2之中心軸方向實質延伸之複數通道。 第3圖之配置提供-均勻氣體沿著前驅物區$ 14、16 及清除氣體區域13之全長流動且沿著排放區域11進行氣 —自句排放。因此’前驅物區域14、16可提供做為前 驅物喷嘴14、16,藉由前驅物喷嘴14、16沿著前驅物區 域之全長進行前驅物之供給。清除氣體區域13亦可提供做 為一清除氣體喷嘴13’藉由清除氣體喷嘴13沿著清除氣 體，域之全長進行清除氣體之供給，並且排放區域U用於 沿著排放區域之全長進行前驅物及清除氣體之排放。 於一可替代實施例中，連續沿著圓柱形喷嘴頭2之周 ，方:所提供之輸出面包括以下順序：可選擇地重覆複數 :之一第-前驅物區域14、一清除區域Η、一第二前驅物 區域16及-清除氣體區域13。於本實施例中，第一前驅 物區域Η具有用於供應第一前驅物之至少一第一入口淳 及用於排放第 剛軀物之至少一第一出口埠，第二前驅物 區域16具有用於供應第二前驅物之至少—第二入口埠及 詩㈣物之至少一第二出口槔’並且清除區域 ’、有用於供應清除氣體之至少-第三入口埠。清除氣體 12 201219117 區域13亦可包括一或多個第三出口埠或可替代地將清除 氣體經由前驅物區域之出口埠進行排放。舉例而言，入口 埠可位於一縱長前驅物通道及清除氣體通道之一端部，並 且出口埠可位於前驅物通道或清除氣體通道之另一端部， 如此使得前驅物及清除氣體可沿著通道流動。可替代地， 入口埠可位於一通道之中間，並且出口埠可位於一通道之 相對端部。 於又一可替代實施例中，本發明之裝置包括一或多個 第一前驅物區域14及一或多個第二前驅物區域16，這些 第刖驅物區域14及第二前驅物區域16實質沿著喷嘴頭 2之中心軸方向而連續交錯設置。前驅物區域14、16、清 除氣體區域13及排放區域u可依照上述方式依序設置。 據此，前驅物區域14、16、清除氣體區域13及排放區域 11 H形區域設置方式而沿著圓柱形喷嘴頭12之中心 ϋ方向連續設置0 #―長條形管狀或圓柱狀基底6或基底 n/m柱狀喷嘴帛2之中心軸方向而運輸通過圓柱 狀喷嘴頭2或於圓柱狀喷嘴頭2上方運輸時，生長層形成 ;之表面4及基底7之表面3之上，藉此所提供之 '方法可有效對於纜線、光纖、管件或其它立體圓柱狀 物件進行生長層形成之處理。 在沿著圓柱形喷嘴頭2 底6或噴嘴頭2及基底載具 作用下，基底或基底之每— 驅物區域，因此可將數個生 之中心軸方向之喷嘴頭2及基 9之相對移動及相對迴轉運動 位置可一或連續多次會合於前 長層設置於基底之上。 13 201219117 因為本發明之技術優點，本發明之概念可經由各種方 式加以實施’對於熟習此項技藝者是顯而易見的。雖然較 佳實施例揭露如上，然其並非用以限制本發明及其實施 例，在不脫離本發明之精神和範圍内’當可做更動與潤飾。 【圖式簡單說明】 以下將配合所附圖式針對本發明之相關較佳實施例進 行詳述如下： 第1圖係根據本發明之裝置之一實施例之示意圖； 第2圖係根據本發明之裝置之另一實施例之示意圖； 第3圖表示本發明之裝置之一噴嘴頭之一實施例之詳 【主要元件符號說明】 11〜排放區域 12〜箭頭 13〜清除氣體區域 14〜第一前驅物區域 16〜第二前驅物區域 2〜噴嘴頭 3〜表面 4 -表面 5〜外表面 6〜基底 14 201219117 7〜基底 8〜箭頭 9~圓柱狀基底載具 15201219117 VI. Description of the Invention: [Technical Field] The present invention relates to a device for treating at least a portion of a cylindrical surface of a substrate or to conform to a cylindrical surface The surface of the substrate is treated by a continuous surface reaction of a first precursor and a second precursor, particularly in accordance with one of the preambles of the scope of the patent application. [Prior Art] Among several types of devices of the prior art, one of the surfaces of a substrate is subjected to at least one first precursor by using these devices and nozzle heads according to the principle of atomic layer deposition (ALD). The surface of the substrate is treated by continuous surface reaction of the material and a second precursor. In ALD applications, two gas precursors are typically introduced into the ALD reactor using a separation stage. The gas precursor effectively reacts with the surface of the substrate to form a single atomic layer of deposition. In general, the precursor stage is carried out in a separate manner from or after the purge stage, and the excess precursor on the surface of the substrate is removed by the precursor stage prior to introduction of the other precursors. Therefore, an ALD process requires sequential transfer of multiple precursors to the surface of the substrate. This repeated alternating surface reaction sequence and the purge phase in between are the general ALD deposition cycles. In the prior art, large-volume cylindrical articles are coated and processed in a large processing chamber, wherein the precursors are sent to a large processing chamber in a continuous interlaced pulse, and must be processed in a very large batch of cylindrical articles until 201219117 Get high economic productivity. • However, because of the simplification of airflow and temperature, it is not easy to achieve optimal pre-(4) use in the processing of large-volume cylindrical parts and it is not possible to achieve the desired thickness in all batches in some atomic layer deposition processes. Uniformity. Furthermore, since each substrate of the substrate treatment material also has material growth on the wall surface, batch processing =: waste and cleaning of the wall of the treatment chamber. There are still many different types of nozzle tips that can be used to partially treat the substrate. This is a nozzle that cannot handle cylindrical objects. These conventional nozzle heads can only use a flat substrate or a planar substrate. These conventional nozzle tips utilize a fast forward wrap to perform multiple scans over the surface of the substrate. However, the conventional technique for making the == layer has a disadvantage in that its moving mechanism produces mechanical force before and after the movement and the nozzle head must resist this mechanical force, and when the moving mechanism is stopped at the end position, mechanical force is generated. Yes: Cause::::: Damaged when accelerating the movement. A: This is easy to cause the device and the mouth of the mouth. [Disclosure] It is an object of the invention to provide a device for solving the above problems. The object of the invention is in accordance with the invention of the first aspect of the invention, characterized in that the substrate is arranged to move relative to each other along the central axis direction of the cylindrical nozzle head. The (4) embodiment of the present invention will be described in the dependent items. This = is intended to provide a cylindrical, sleeve or similar - cylindrical cylindrical nozzle head 1 cylindrical (four) head including - "201219117 has an output surface of a substantial circular peripheral output surface for the supply of precursors. The nozzle head can be a hollow cylinder, and the wheel surface may be the inner surface of the hollow cylinder, or the output surface may be a hollow cylinder or a solid cylindrical outer surface. Alternatively, the nozzle head may be a solid cylinder, and the wheel surface may be outside the cylinder The output surface of the nozzle head continuously includes a first precursor region and a second precursor region 'and the output surface of the nozzle tip may also selectively include a plurality of purge gas regions and a plurality of discharge regions' of the purge gas region and the discharge region Between the precursor regions, the discharge region, the purge gas region and the discharge region are arranged alternately along the circumference of the nozzle tip before the output face of the nozzle head. The front (four) n-domain and the purge gas region can be provided for supply. a precursor and a nozzle for removing gas. The nozzle head and the base are more movable relative to each other along the central axis of the cylindrical nozzle head' The cylindrical base and the nozzle tip are also rotatable about a central axis of the cylindrical nozzle head. The nozzle head is for processing at least a portion of the cylindrical substrate or a substrate with at least a portion of the surface of the cylindrical substrate carrier. For moving a cylindrical substrate or a cylindrical substrate carrier along the central axis of the nozzle head. Alternatively, the nozzle tip itself moves along the central axis of the nozzle tip. Further, the nozzle tip and/or the substrate may Rotating relative to each other about the central axis of the mouth and mouth. Therefore, under the nozzle head and the substrate facing each other, a substrate can be transferred and optionally rotated. The device of the present invention has the advantages of a cylindrical substrate or The surface treatment process does not cause a large amount of material waste and cleaning problems. Therefore, the present invention can treat a large number of cylindrical substrates or surfaces for economic benefit. Moreover, the present invention utilizes the rotary motion to uniformly expose the surface of the substrate to the precursor. 6 The role of 201219117. Compared to the forward and backward movements, the stress and strength exerted by the device using Huiming, and back: : Less: The average speed to the local hair is higher than the average bulk moving forward and backward. The method provided for the cylindrical base and the cylindrical surface can be slanted by the present invention. [Embodiment] Figure i shows an embodiment of the apparatus of the present invention for processing at least a portion of the cylindrical table " in 2. The device of "the nozzle includes a nozzle head in Fig. 1 and the nozzle head 2 is a wall Ilk ^ A. The shaft has a substantially circular periphery, and the n-inch has an inner surface and an outer surface. In the embodiment of Fig. 1, the inner surface of the 'moon side county _ K Xiaobian wall is the output surface of the nozzle head 2, and the precursor is supplied through the output surface of the squirting nozzle 2 to make a base A surface is affected by the precursor of the field, ^, used. As shown in Fig. 1, the nozzle head 2 is used to treat the outer surface 4' of the cylindrical substrate 6 so that the cylindrical substrate 6 can move through the hollow nozzle head 2. ^ A first precursor and a second precursor may be any gaseous precursor applied to the atomic layer deposition process. Furthermore, plasma is also used as a precursor. - The purge gas system may be some obtuse gas (for example: nitrogen plasma or the like. The precursor, purge gas is supplied to the nozzle tip 2 via the fluid connection.?)·#,, ^ L Alternatively, the nozzle tip 2 with one or more precursors and / or purge gas to pay $, gift 11 4, bottles or the like, so that the precursor and / or purge gas can squat 9 „ 丄 颂 颂 2 simultaneously move, borrow This configuration reduces the number of high-tech fluid connections required to connect to the moving nozzle tip 2. The cylindrical nozzle head 2 has one or more first precursor regions 201219117 domain 14 and one or more second precursors The object region 16' causes the outer surface 4 of the cylindrical substrate 6 to be subjected to the first precursor by the first precursor region 14, and the outer surface 4 of the cylindrical substrate 6 is subjected to the second surface by the second precursor region 16. The precursor acts. As shown in Fig. 1, the nozzle head 2 includes two first precursor regions 14 and two second precursor regions 16, and the first precursor region 14 and the second precursor region 16 are attached to the nozzle tip. 2 in the direction of the peripheral wall, alternately and continuously along the output surface. When cylindrical The substrate 6 is rotated about the longitudinal axis along the arrow 12 of the i-th diagram such that the outer surface 4 of the substrate 6 can be subjected to the first precursor and the second precursor in the first precursor region 14 and the second precursor region 16. It should also be noted that the nozzle head 2 can be rotated about the central axis, or the cylindrical base 6 and the nozzle head 2 can be rotated in the same or different directions. Therefore, the nozzle head 2 in the present invention And the substrate can be rotated relative to each other about the central axis and the longitudinal axis of the nozzle head 2. As shown in Fig. i: the head 8 of the present invention is shown in the head 8 with respect to the nozzle head 2 along the center of the nozzle head 2 The axial direction or the longitudinal direction of the cylindrical substrate 6 is transferred or moved 'by thereby moving the cylindrical base 6 through the hollow nozzle head 2. It is noted that either the nozzle head 2 or the cylindrical substrate 6 can be along the nozzle The head 2 moves in the -axis direction, or both the nozzle head 2 and the cylindrical base 6 can move in the same or different directions along the central axis of the nozzle head 2, so that 'in the direction of the central axis of the nozzle head 2 The phase of the nozzle head 2 and the cylindrical base 6 are relatively reversed. And the relative movement can cause the entire outer surface 4 of the substrate 6 to be subjected to several actions of the precursor and the second precursor. Thus, the work can be performed outside the substrate 6, and the outer surface of the substrate 6 is L. The growth layer is formed on 4. The cylindrical substrate 6 can be a pipe member, a rod member, a twisted wire, a pre-fiber, a glass preform or its 8 201219117. It is similar to a cylindrical member. If it is a base wide, it has 6 available roll-to-roll methods. The self-first roller is supplied to the base overspray. Further, the cylindrical base may also be a surfaced object. This represents the cylindrical shape of the cylindrical base, such as the degree of fullness, degree, and degree. A cylindrical or partially cylindrical surface. Also limited to any of the second figures is a schematic view of another embodiment of the apparatus according to the present invention, wherein the nozzle head 2 substantially corresponds to the nozzle head of the first drawing. In the present embodiment, the substrate 7 is attached to the outer surface 5 of the cylindrical substrate carrier 9. The base & 7 in Fig. 2 is a continuous strip substrate' and the substrate 7 disposed thereon may be identical to the cylindrical substrate carrier 9 or wound around the cylindrical substrate carrier 9. In some embodiments, the disposed dispersion substrate may also be bonded or attached to the surface 5 of the cylindrical substrate carrier 9 or the surface of the cylindrical substrate carrier 9 and the dispersed substrate may be Any flexible or hard substrate. As shown in Fig. 2, in the direction of the arrow 8 and in the direction of the central axis of the nozzle head 2, the nozzle head 2 and the cylindrical base carrier 9 are moved relative to each other and are supported by the nozzle head 2 and the cylindrical base. The base 7 can be supplied to the nozzle head 2 with the 9 rotating relative to each other. The substrate 7 may be attached to the cylindrical substrate carrier 9 in a spiral manner as shown in Fig. 2, or the substrate 7 may be covered on the entire surface 5 of the cylindrical substrate carrier 9 in this manner. When the cylindrical substrate carrier 9 moves relative to the nozzle head 2, the surface 3 of the substrate 7 is subjected to the continuous surface reaction of the first precursor and the second precursor by the first precursor region and the second precursor region, respectively. . The nozzle head 2 shown in Figs. 1 and 2 is a hollow cylinder having an output surface on the inner surface of the peripheral wall of the circle 9 201219117. However, the nozzle head 2 can also be formed with an output face on the outer surface of the cylindrical nozzle head. In this embodiment, the nozzle head may be a hollow cylinder as shown in Figures 1 and 2, or the nozzle head may be a solid cylinder, or the nozzle head may have a central axis and be formed as one of the outer surfaces of the output surface. a cylindrical, and output mask on the outer surface of the nozzle tip 2 having one or more first precursor regions and one or more second precursor regions. The peptide first precursor region and the second precursor region are continuously along the circumference The outer surface direction is set as shown in the inner surface of the second drawing. When the outer surface of the nozzle tip 2 is the output face, the apparatus of the present invention is used to treat an inner surface of a hollow tubular or cylindrical substrate such that the nozzle is only angularly positioned inside the substrate. The nozzle head and the base are moved or rotated relative to each other in the same manner as described in Figures 1 and 2. The device in one embodiment includes a - cylindrical nozzle tip and a second hollow cylindrical nozzle tip. The first cylindrical nozzle has a 1 + /, a first diameter and an output surface, and the output surface is located on the outer surface of the first cylindrical nozzle. The second hollow cylindrical nozzle head has a second diameter and an output face, the output face being located on the inner surface of the second hollow cylindrical nozzle head.筮_ The second diameter of the hollow cylindrical nozzle head is larger than the first cylindrical nozzle head, <first diameter, such that the first cylindrical nozzle head can be disposed in the second central τ two-circular nozzle head Inside. By the first cylindrical nozzle head formed by the first diameter and the second diameter of the second hollow cylindrical nozzle head, the output surface of the first circular dome nozzle head and the output of the second hollow cylindrical nozzle head There is a gap between the faces L i . When a hollow tube or tube is introduced into the gap between the first cylindrical nozzle angle 蹲 and the second hollow cylindrical nozzle head, thereby arranging the outer surface and the inner surface of the hollow tube or tube 10 201219117 simultaneously Being processed. The apparatus of the present invention can include a first moving mechanism and a second moving mechanism. The tubular or cylindrical substrate 6 or the tubular or cylindrical substrate holder 9 is moved along the central axis of the cylindrical nozzle head 2 by the first moving mechanism. The tubular or cylindrical substrate 6 or the tubular or cylindrical substrate carrier 9 is rotated about the central axis of the tubular or cylindrical substrate 6 or the tubular or cylindrical substrate carrier 9 by means of a second moving mechanism. The apparatus of the present invention may also include or alternatively include a third moving mechanism and a fourth moving mechanism. The cylindrical nozzle head 2 is moved along the mandrel of the cylindrical nozzle head 2 by the second moving mechanism. The cylindrical nozzle head 2 is rotated about the central axis of the cylindrical nozzle head 2 by means of a fourth moving mechanism. It is to be noted that the apparatus of the present invention may include one or more first moving mechanisms, a second moving mechanism, a second moving mechanism, and a fourth moving mechanism. In the present invention, the nozzle head 2 and the cylindrical substrate 6 or between the nozzle head 2 and the cylindrical substrate carrier 9 are moved relative to each other along the central axis of the nozzle head 2. It should be noted that the moving mechanism can be omitted by detailed descriptions of various conventional methods.仃Architecture' Therefore, the moving machine Fig. 3 shows the nozzle head 2 of the first and second figures. The inner surface of the nozzle head 2 has an output surface which is continuously continuous on the wheel exit surface. The following steps are repeated: one of the plurality of purge gas regions is selectively repeated, a precursor region 14, 16 and a discharge region 11. The purge gas, X 13, the precursor regions 14, 16 and the discharge region 11 are successively staggered along the circumferential direction of the cylindrical nozzle, item 2. As shown in Fig. 3, the nozzle continues to include the following sequence: optionally repeating the complex number - the output surface is connected _ the first precursor region 201219117 domain Η, a discharge region 11, _ purge gas region 13, - the second precursor The object area 16, a discharge area u& - the purge gas area 13. The precursor, '! is supplied by the first-ply-dried region 14 and the second precursor region 16 such that the surface of the substrate is reacted by the surface of the precursor. The purge gas and precursors supplied in the purge gas zone are discharged through the discharge zone by suction or vacuum. As shown in Fig. 3, the precursor regions 14, 16 may be formed as a plurality of passages substantially extending in the direction of the central axis of the cylindrical nozzle head 2. The configuration of Figure 3 provides that a uniform gas flows along the entire length of the precursor zones $14, 16 and the purge gas zone 13 and is vented along the discharge zone 11. Thus, the precursor regions 14, 16 can be provided as precursor nozzles 14, 16 by which the precursor nozzles 14, 16 are supplied along the entire length of the precursor region. The purge gas zone 13 can also be provided as a purge gas nozzle 13' for purging gas supply along the entire length of the purge gas by the purge gas nozzle 13, and the discharge zone U is used to carry the precursor along the entire length of the discharge zone And remove gas emissions. In an alternative embodiment, continuously along the circumference of the cylindrical nozzle head 2, the output surface provided includes the following sequence: optionally repeating the plural: one of the first precursor regions 14, a clearing region Η a second precursor region 16 and a purge gas region 13. In this embodiment, the first precursor region Η has at least one first inlet port for supplying the first precursor and at least one first outlet port for discharging the first body, and the second precursor region 16 has And at least one second outlet 槔' of the second precursor 埠 and the poem (four) for supplying the second precursor, and a clearing area ′, at least a third inlet 用于 for supplying a purge gas. The purge gas 12 201219117 The zone 13 may also include one or more third outlet ports or alternatively discharge purge gas through the outlet port of the precursor zone. For example, the inlet port can be located at one end of one of the lengthwise precursor channel and the purge gas channel, and the outlet port can be located at the other end of the precursor channel or the purge gas channel such that the precursor and purge gas can follow the channel flow. Alternatively, the inlet port can be located in the middle of a channel and the outlet port can be located at the opposite end of a channel. In yet another alternative embodiment, the apparatus of the present invention includes one or more first precursor regions 14 and one or more second precursor regions 16, and these first and second precursor regions 14 and Substantially staggered along the central axis direction of the nozzle head 2. The precursor regions 14, 16, the purge gas region 13, and the discharge region u may be sequentially disposed in the manner described above. Accordingly, the precursor regions 14, 16, the purge gas region 13, and the discharge region 11 are disposed in an H-shaped region to continuously set the 0#-long tubular or cylindrical substrate 6 along the center ϋ direction of the cylindrical nozzle tip 12 or When the substrate n/m columnar nozzle 帛2 is transported through the cylindrical nozzle head 2 or transported over the cylindrical nozzle head 2, the growth layer is formed; the surface 4 and the surface 3 of the substrate 7 are formed thereon. The 'method provided' is effective for the formation of growth layers for cables, fibers, tubes or other solid cylindrical articles. Under the action of the bottom of the cylindrical nozzle head 2 or the nozzle head 2 and the substrate carrier, each of the substrate or the substrate, so that the nozzle head 2 and the base 9 of the plurality of central axes can be opposite each other. The moving and relative rotational movement positions may be placed on the substrate one or more consecutively in the front layer. 13 201219117 The concept of the invention may be embodied in a variety of ways, as will be apparent to those skilled in the art. Although the preferred embodiment is disclosed above, it is not intended to limit the invention and its embodiments, and may be modified and modified without departing from the spirit and scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings: FIG. 1 is a schematic diagram of an embodiment of the apparatus according to the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 3 is a view showing an embodiment of a nozzle head of the apparatus of the present invention. [Main component symbol description] 11 to discharge area 12 to arrow 13 to purge gas area 14 to first Precursor region 16 to second precursor region 2 to nozzle head 3 to surface 4 - surface 5 to outer surface 6 to substrate 14 201219117 7 to substrate 8 to arrow 9 to columnar substrate carrier 15