WO2012028779A1 - Appareil - Google Patents

Appareil Download PDF

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Publication number
WO2012028779A1
WO2012028779A1 PCT/FI2011/050747 FI2011050747W WO2012028779A1 WO 2012028779 A1 WO2012028779 A1 WO 2012028779A1 FI 2011050747 W FI2011050747 W FI 2011050747W WO 2012028779 A1 WO2012028779 A1 WO 2012028779A1
Authority
WO
WIPO (PCT)
Prior art keywords
nozzle head
precursor
cylindrical
substrate
zone
Prior art date
Application number
PCT/FI2011/050747
Other languages
English (en)
Inventor
Tapani Alasaarela
Pekka Soininen
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to CN201180041762.0A priority Critical patent/CN103080374B/zh
Priority to DE112011102856.3T priority patent/DE112011102856B4/de
Publication of WO2012028779A1 publication Critical patent/WO2012028779A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Definitions

  • the present invention relates to an apparatus for processing at least partly cylindrical surface of a substrate or a surface of a substrate conforming a cylindrical surface by subjecting a surface of a substrate to successive surface reactions of at least a first precursor and a second precursor, and particularly to an apparatus according to the preamble of claim 1 .
  • nozzle heads are used for subjecting a surface of a substrate to successive surface reactions of at least a first precursor and a second precursor according to the principles of atomic layer deposition method (ALD).
  • ALD atomic layer deposition method
  • typically two gaseous precursors are introduced into the ALD reactor in separate stages.
  • the gaseous precursors effectively react with the substrate surface, resulting in deposition of a single atomic layer.
  • the precursor stages are typically followed or separated by and purge stage that eliminates the excess precursor from the surface of the substrate prior to the separate introduction of the other precursor. Therefore an ALD process requires alternating in sequence the flux of precursors to the surface of the substrate. This repeated sequence of alternating surface reactions and purge stages between is a typical ALD deposition cycle.
  • Prior art nozzle heads are designed to be moved back and forth using fast speed for performing multiple scans over the surface of the substrate.
  • This prior art way for producing several atomic layer the disadvantage that the back and forth movement produces great mechanical forces the nozzle head has to stand. The forces are especially high as the nozzle has be stopped in the extreme position and accelerated again. Therefore the apparatus and the nozzle head are susceptible to damages.
  • the object of the present invention is to provide an apparatus such that the above mentioned prior art problems are solved.
  • the objects of the present invention are achieved with an apparatus according to the charac- terizing portion of claim 1 , characterized in that the nozzle head and the substrate are arranged be moved relative to each other in direction of the central axis of the of the cylindrical nozzle head.
  • the present invention is based on the idea of providing a substantially cylindrical nozzle head in the form of a cylinder, sleeve, or the like.
  • the cylindrical nozzle head comprises a central axis and a substantially circular circumference having an output face for supplying precursors.
  • the nozzle head may be a hollow cylinder and the output face may be the inner surface of the hollow cylinder or the outer surface of the hollow cylinder or a solid sylinder.
  • the nozzle head may be a solid cylinder and the output face is the outer surface of the cylinder.
  • the nozzle head comprises on the output face in succession first and second precursor zones and optionally also purge gas zones and discharge zones between the precursor zones.
  • the precursor zones, purge gas zones and discharge zones are provided to the output face in succession in the direction of the circular circumference.
  • the precursor zones and the purge gas zone may be provided as nozzles for supplying precursors and purge gas.
  • the nozzle head and the substrate are further arranged to be moved in the direction of the central axis relative to each other, and maybe also rotated around the central axis.
  • the nozzle head is arranged to process at least partly cylindrical substrate or a substrate conforming a surface of at least partly cylindrical substrate carrier.
  • the apparatus may also be arranged to move a cylindrical substrate or cylindrical substrate carrier in the direction the central axis of the nozzle head.
  • the nozzle head itself is arranged to move in the direction the central axis of the nozzle head.
  • the nozzle head and/or substrate may be rotated relative to each other around the central axis of the nozzle head. Therefore, a substrate may be processed transferring, and optionally also rotating, the nozzle head and the substrate in relation to each other.
  • the present invention has the advantage that it provides an appara- tus which enables cylindrical substrates or surfaces to be processed without large waste and cleaning problems. Therefore, the present invention provides an economical way for processing large number of cylindrical substrates or surfaces.
  • the present invention furthermore enables to use rotational movement for subjecting the surface of the substrate uniformly to the precursors. The rotational movement decreases the stresses and forces subjected to the apparatus as it is moved compared to back and forth movement. The rotation movement enables higher average velocity than the back and forth movement. Therefore, the present invention provides a solution for processing cylindrical substrates and cylindrical surfaces such that the problems of the prior art solved.
  • Figure 1 is a schematic view showing one embodiment of the apparatus according to the present invention.
  • FIG. 2 is a schematic view showing another embodiment of the apparatus according to the present invention.
  • Figure 3 shows a detailed view of one embodiment of a nozzle head of the apparatus.
  • Figure 1 shows schematically one embodiment of the present inven- tion.
  • the apparatus for processing at least partly cylindrical surface comprises a nozzle head 2.
  • the nozzle head 2 is a hollow cylinder having a central axis and substantially circular circumference wall.
  • the circumference wall has an inner surface and an outer surface.
  • the inner surface of the circumference wall is the output face of the nozzle head 2.
  • the precursors are supplied through the output face for subjecting the surface of a substrate to precursors.
  • the nozzle head 2 is thus arranged to process an outer surface 4 of cylindrical substrate 6 such that the cylindrical substrate 6 may be moved through the hollow nozzle head 2, as shown in figure 1 .
  • the first and second precursors may be any gaseous precursors which may be used in atomic layer deposition.
  • plasma may also be used as precursor.
  • Purge gas may be some inert gas such as nitrogen, plasma, or the like.
  • the precursors and purge gas may be supplied to the nozzle head 2 via fluid connections.
  • the nozzle head 2 is provided with one or more precursor and/or purge gas containers, bottles or the like such that the precursors and/or the move together with the nozzle if the nozzle head is moved. This arrangement decreases the number of difficult fluid connections to a moving nozzle head 2.
  • the output face of the cylindrical nozzle head 2 is provided with one or more first precursor zones 14 for subjecting the surface 4 cylindrical sub- strate 6 to the a precursor, and one or more second precursor zones 16 for subjecting the surface 4 of the cylindrical object 6 to the second precursor.
  • the nozzle head 2 comprises two first precursor zones 14 and two second precursor zones 16 arranged alternatively in succession in the direction of the circumference wall and along the output face.
  • the nozzle head 2 may be rotated around the central axis, or both the substrate 6 and the nozzle head 2 may be rotated in same or different directions.
  • the nozzle head 2 and the substrate may be rotated relative to each other around the central axis, the longitudinal axis, of the cylindrical nozzle head 2.
  • the cylindrical substrate 6 is transferred or moved in the direction of the central axis of the nozzle head 2 in relation to the cylindrical nozzle head 2, as shown with arrow 8 in figure 1 , or the longitudinal direction of the cylindrical substrate 6, for moving the cylindrical substrate 6 through the hollow nozzle head 2.
  • either the nozzle head 2 or the substrate 6 may be moved in the direction of the central axis of the nozzle head 2 or both the nozzle head 2 and the substrate 6 may be moved in the direction of the central axis in same or dif- ferent directions. Therefore, the relative rotation and movement in the direction of the central axis of the nozzle head 2 enables the whole surface 4 of the substrate 6 to be subjected several times to first and second precursors for producing growth layers on the surface 4 of the substrate 6.
  • the substrate 6 may be a pipe, rod, cable, optical fibre, glass perform, or the like cylindrical object. If the substrate 6 is flexible, it may be processed in roll-to-roll manner by supplying the substrate 6 from a first roll through the nozzle head 2 to a second roll.
  • cylindrical substrate may also be on object having only partly cylindrical surface. This means that the cylindrical surface does not have to be 360 degrees but, for example only 270 degrees, 180 degrees, 90 degrees.
  • the present invention is not restricted to any cylindrical or partly cy- lindrical surface.
  • Figure 2 shows another embodiment of the present invention, in which the nozzle head 2 substantially corresponds the nozzle head of figure 1 .
  • a substrate 7 is conforming an outer surface 5 of a cylindrical substrate carrier 9.
  • the substrate 7 is a strip like continuous sub- strate, but the substrate 7 may be any flexible substrate that may be arranged to conform or wound over the cylindrical substrate carrier 9.
  • separate substrates may also be arranged to conform the outer surface 5 of the substrate carrier 9 or the separate substrates may be engaged or attached to the outer surface 5 of the substrate carrier 9.
  • These separate sub- strates may be any flexible or rigid substrates.
  • the substrate 7 is supplied to the nozzle head 2 by moving the nozzle head 2 and the substrate carrier 9 relative to each other in the direction of arrow 8, the direction of the central axis of the nozzle head 2 and rotating the nozzle head 2 and the substrate carrier 9 relative to each other.
  • the substrate 7 may be attached to the substrate carrier 9 in spiral manner as in figure 2 or such that the substrate 7 covers the whole surface 5 of the substrate carrier 9.
  • the substrate carrier 9 is moved relative to the nozzle head the surface 3 of the substrate 7 is subjected to successive surface reactions of the first and second precursor by the first and second precursor zone, respectively.
  • the nozzle head 2 is shown as hollow cylinder having the output face on the inner surface of the circumference wall.
  • the nozzle head 2 may also be formed such that the output face is provided on the outer surface of the cylindrical nozzle head.
  • the nozzle head may be hollow cylinder, as in figures 1 and 2, or a solid cylin- der, or a hollow cylinder, having a central axis and an outer surface forming the output face.
  • the output face on the outer surface of the nozzle head 2 is pro- vided with one or more first precursor zones and one or more second precursor zone in succession in the direction of the circumferential outer surface, in the same manner as in the inner surface of figures 1 and 2.
  • the apparatus When the outer surface of the cylindrical nozzle head 2 is the output face the apparatus is ar- ranged to process an inner surface of a hollow tubular or cylindrical substrate such that the nozzle head may be positioned inside the substrate.
  • the nozzle head and substrate may be moved and rotated relative to each other in the same way as described in connection with figures 1 and 2.
  • the apparatus comprises a first cylindrical noz- zle head having a first diameter and an output face on the outer surface of the cylindrical nozzle head and a second hollow cylindrical nozzle head having a second diameter and an output face on the inner surface of the hollow cylindrical nozzle head.
  • the second diameter is larger than the first diameter such that the first cylindrical nozzle head may be arranged inside the second cylin- drical nozzle head.
  • the first and second diameter are formed such that there is a gap between the output face of the first nozzle head and the output face of the second nozzle head. This arrangement enables the outer surface and the inner surface of a hollow tube or pipe to be processed at the same time as the tube or pipe is guided into and through the gap between the first and second nozzle head.
  • the apparatus of the present invention may comprise a first moving mechanism for moving the tubular or cylindrical substrate 6 or the tubular or cylindrical substrate carrier 9 in the direction of the central axis of the cylindrical nozzle head 2 and a second moving mechanism for rotating the tubular or cylindrical substrate 6 or the tubular or cylindrical substrate carrier 9 around the central axis of the tubular or cylindrical substrate 6 or the tubular or cylindrical substrate carrier 9.
  • the apparatus may also or alternatively comprise third moving mechanism for moving the cylindrical nozzle head 2 in the direction of the central axis of the cylindrical nozzle head 2 and a fourth moving me- chanism for rotating the cylindrical nozzle head 2 around the central axis of the cylindrical nozzle head 2. It should be noted that the apparatus may comprise one or more of the mentioned first, second, third and fourth moving mechanisms.
  • the nozzle head 2 and the substrate 6 or substrate carrier 9 are moved relative to each other in the direction of the central axis of the cylindrical nozzle head 2.
  • the moving mechanisms may be constructed in various known ways and thus the detailed description of the moving mechanisms is omitted.
  • Figure 3 shows a detailed view of the nozzle head 2 of figures 1 and 2.
  • the nozzle head comprises on the inner surface, on the output face, in suc- cession in the following order: a purge gas zone 13, a precursor zone 14, 16 and a discharge zone 1 1 , optionally repeated a plurality of times.
  • the purge gas zone 13, precursor zone 14, 16 and the discharge zone 1 1 are arranged alternatively in succession in the direction of the circumference of the cylindrical nozzle head 2.
  • the nozzle head 2 comprises on the output face in succession in the following order: a first precursor zone 14, a discharge zone 1 1 , purge gas zone 13, a second precursor zone 16, a discharge zone 1 1 and a purge gas zone 13, optionally repeated a plurality of times.
  • the precursors are supplied though the precursor zones 14, 16 for subjecting the surface to surface reactions of the precursors.
  • Purge gas supplied in the purge gas zone and the precursors are discharged with the discharge zones using suction or vacuum.
  • the precursor zones 14, 16 may be formed as channels extending substantially the direction of the central axis of the cylindrical nozzle head 2, as shown in figure 3.
  • the arrangement of figure 3 provides a uniform gas flow along whole length of the precursor zone 14, 16 and the purge gas zone 13, and also a uniform discharge along the discharge zone 1 1 . Therefore the precursor zones 14, 16 may be provided as precursor nozzles 14, 16 supplying precursors along the whole length of the precursor zone. Also purge gas zone 13 may be provided as a purge gas nozzle supplying purge gas along the whole length of the purge gas zone and the discharge zone 1 1 is arranged to discharge precursors and purge gas along the whole length of the discharge zone.
  • the output face is provided in succession in the direction of the circumference of the cylindrical nozzle head 2 in the following order: a first precursor zone 14, a purge zone 13, a second precursor zone 16 and a purge gas zone 13, optionally repeated a plurality of times.
  • the first precursor zone 14 is provided with at least one first inlet port for supplying the first precursor and at least one first outlet port for discharging the first precursor
  • the second purge gas zone 16 is provided with at least one second inlet port for supplying the second precursor and at least one second outlet port for discharging the second precursor
  • the purge zone 13 is provided with at least one third inlet port for supplying purge gas.
  • the purge gas zone 13 may also comprise one or more third outlets or alternatively purge gas may be discharged through the outlet ports of the precursor zones.
  • the inlet ports may be located for example to one end of a longitu- dinal precursor channel and purge gas channel and the outlet ports may be located to another end of the precursor channel or purge gas channel such that the purge gas and precursors may flow along the channels.
  • the inlet ports may be located substantially in the middle of a channel and the outlet ports to the opposite ends of a channel.
  • the apparatus comprises one or more first precursor zones 14 and one or more second precursor zones 16 arranged alternatively in succession substantially in the direction of the central axis of the nozzle head 2.
  • the precursor zones 14, 16 and the purge gas zones 13 and the discharge zones 1 1 may be arranged in order as described above. Accordingly the precursor zones 14, 16, purge gas zones 13 and the discharge zones 1 1 are arranged as circular zones arranged successively in the direction of the central axis of the cylindrical nozzle head 12.
  • growth layers are formed on the surface 4, 3 of the substrate 6, 7.
  • the relative movement of the nozzle head 2 and the substrate 6 or the substrate carrier 9 in the direction of the central axis of the cylindrical noz- zle head 2 and the relative rotating motion enables the substrate, or every point of the substrate, to meet the precursor zones one or more times in succession.
  • several growth layers may be provided on the substrate.

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention porte sur un appareil à surface au moins en partie cylindrique (4, 5). L'appareil comprend au moins une tête de buse (2) comprenant une ou plusieurs zones de premier précurseur (14) destinées à exposer la surface (4) ou le substrat (7) de l'objet cylindrique (6) à un premier précurseur et une ou plusieurs zones de second précurseur (16) destinées à exposer la surface (4) de l'objet cylindrique (6) à un second précurseur. Selon la présente invention, la tête de buse (2) est mise sous forme d'un cylindre ayant un axe central et une circonférence pratiquement circulaire comprenant la face de sortie et la face de sortie est dotée d'une ou plusieurs zones de premier précurseur (14) et d'une ou plusieurs zones de second précurseur (16).
PCT/FI2011/050747 2010-08-30 2011-08-29 Appareil WO2012028779A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201180041762.0A CN103080374B (zh) 2010-08-30 2011-08-29 装置
DE112011102856.3T DE112011102856B4 (de) 2010-08-30 2011-08-29 Anordnung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20105902 2010-08-30
FI20105902A FI20105902A0 (fi) 2010-08-30 2010-08-30 Laite

Publications (1)

Publication Number Publication Date
WO2012028779A1 true WO2012028779A1 (fr) 2012-03-08

Family

ID=42669406

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FI2011/050747 WO2012028779A1 (fr) 2010-08-30 2011-08-29 Appareil

Country Status (5)

Country Link
CN (1) CN103080374B (fr)
DE (1) DE112011102856B4 (fr)
FI (1) FI20105902A0 (fr)
TW (1) TW201219117A (fr)
WO (1) WO2012028779A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150167164A1 (en) * 2012-07-09 2015-06-18 Beneq Oy Apparatus and method for processing substrate

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4597986A (en) * 1984-07-31 1986-07-01 Hughes Aircraft Company Method for photochemical vapor deposition
JPH05270997A (ja) * 1992-03-19 1993-10-19 Fujitsu Ltd 原子層エピタキシー装置および原子層エピタキシー法
JP2004014953A (ja) * 2002-06-10 2004-01-15 Tokyo Electron Ltd 処理装置および処理方法
JP2007111678A (ja) * 2005-10-24 2007-05-10 Sekisui Chem Co Ltd 線状被処理物用プラズマ処理装置
US20070292974A1 (en) * 2005-02-17 2007-12-20 Hitachi Kokusai Electric Inc Substrate Processing Method and Substrate Processing Apparatus
US20080193643A1 (en) * 2007-02-12 2008-08-14 Tokyo Electron Limited Atomic layer deposition systems and methods
US20090304924A1 (en) * 2006-03-03 2009-12-10 Prasad Gadgil Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films
US20100068383A1 (en) * 2008-09-17 2010-03-18 Tokyo Electron Limited Film deposition apparatus, film deposition method, and computer readable storage medium
WO2011041255A1 (fr) * 2009-09-30 2011-04-07 Synos Technology, Inc. Réacteur de dépôt en phase vapeur pour former une couche mince sur une surface courbe

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MX9303141A (es) 1992-05-28 1994-04-29 Polar Materials Inc Metodos y aparatos para depositar recubrimientos de barrera.
US20050172897A1 (en) * 2004-02-09 2005-08-11 Frank Jansen Barrier layer process and arrangement
KR20060103640A (ko) * 2005-03-28 2006-10-04 삼성전자주식회사 반도체 제조장치
JP5260050B2 (ja) 2005-05-27 2013-08-14 麒麟麦酒株式会社 ガスバリア性プラスチック容器の製造装置及びその容器の製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4597986A (en) * 1984-07-31 1986-07-01 Hughes Aircraft Company Method for photochemical vapor deposition
JPH05270997A (ja) * 1992-03-19 1993-10-19 Fujitsu Ltd 原子層エピタキシー装置および原子層エピタキシー法
JP2004014953A (ja) * 2002-06-10 2004-01-15 Tokyo Electron Ltd 処理装置および処理方法
US20070292974A1 (en) * 2005-02-17 2007-12-20 Hitachi Kokusai Electric Inc Substrate Processing Method and Substrate Processing Apparatus
JP2007111678A (ja) * 2005-10-24 2007-05-10 Sekisui Chem Co Ltd 線状被処理物用プラズマ処理装置
US20090304924A1 (en) * 2006-03-03 2009-12-10 Prasad Gadgil Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films
US20080193643A1 (en) * 2007-02-12 2008-08-14 Tokyo Electron Limited Atomic layer deposition systems and methods
US20100068383A1 (en) * 2008-09-17 2010-03-18 Tokyo Electron Limited Film deposition apparatus, film deposition method, and computer readable storage medium
WO2011041255A1 (fr) * 2009-09-30 2011-04-07 Synos Technology, Inc. Réacteur de dépôt en phase vapeur pour former une couche mince sur une surface courbe

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
CAMERON, D ET AL.: "Towards a roll- to roll ALD process", 18 March 2010 (2010-03-18), pages 16 - 19, Retrieved from the Internet <URL:http://www.miics.net/2010/material/Towards%20a%20roll-to-roll%20ALD%20process.pdf.> [retrieved on 20111207] *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150167164A1 (en) * 2012-07-09 2015-06-18 Beneq Oy Apparatus and method for processing substrate
US10023957B2 (en) * 2012-07-09 2018-07-17 Beneq Oy Apparatus and method for processing substrate

Also Published As

Publication number Publication date
TW201219117A (en) 2012-05-16
CN103080374A (zh) 2013-05-01
CN103080374B (zh) 2016-04-13
DE112011102856B4 (de) 2023-03-23
DE112011102856T5 (de) 2013-08-08
FI20105902A0 (fi) 2010-08-30

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