WO2012028776A1 - Appareil - Google Patents

Appareil Download PDF

Info

Publication number
WO2012028776A1
WO2012028776A1 PCT/FI2011/050743 FI2011050743W WO2012028776A1 WO 2012028776 A1 WO2012028776 A1 WO 2012028776A1 FI 2011050743 W FI2011050743 W FI 2011050743W WO 2012028776 A1 WO2012028776 A1 WO 2012028776A1
Authority
WO
WIPO (PCT)
Prior art keywords
transport
substrate
nozzle head
cylinder
precursor
Prior art date
Application number
PCT/FI2011/050743
Other languages
English (en)
Inventor
Jari Sinkko
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to CN201180041755.0A priority Critical patent/CN103108985B/zh
Publication of WO2012028776A1 publication Critical patent/WO2012028776A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments

Definitions

  • the present invention relates to an apparatus for processing a surface of a flexible substrate by subjecting the surface of a substrate to successive- sive surface reactions of at least a first precursor and a second precursor, and particularly to an apparatus according to the preamble of claim 1 .
  • ALD atomic layer deposition method
  • the prior art ALD-apparatuses usually comprise a nozzle head having one or more first precursor zones for subjecting the surface of the substrate to the first precursor, one or more second precursor zones for subjecting the surface of the substrate to the second precursor, and one or more purge gas zones or purge gas zones arranged between the first and second precursor zones for subjecting the surface of the substrate to a purge gas.
  • the zones are arranged alternatively in succession to the nozzle head: first precursor zone, purge gas zone, second precursor zone, purge gas zone, first precursor zone, purge gas zone, second precursor zone, and so on. Therefore when the nozzle head is moved on the substrate surface it will produce growth layers according to the principles of ALD method.
  • the nozzle head may also comprise discharge channels arranged between the first and second precursor zone or between a first precursor zone and a purge gas zone or between a second precursor zone and a purge gas zone.
  • the discharge channel is arranged to exhaust precursor and purge gas after the surface of the substrate is subjected to it.
  • each of these prior art precursor zones and purge gas zones comprise at least one inlet port for supplying the precursor or purge gas and at least one outlet port for exhausting the precursor or purge gas.
  • the nozzle head is formed to comprise several first and second zones such that a single scan with the nozzle head over the surface of the substrate forms several atomic layers on the surface of the substrate.
  • the single scan with the nozzle head may be done by moving either the nozzle head or the substrate.
  • the number of scan with the nozzle head is increasing by moving the nozzle head back and forth using fast speed for performing multiple scans over the surface of the substrate.
  • This prior art way for producing several atomic layer the disadvantage that the back and forth movement produces great mechanical forces the nozzle head has to withstand. The forces are especially high as the nozzle head has be stopped in the extreme position and accelerated again. Therefore the apparatus and the nozzle head are susceptible to damages.
  • the object of the present invention is to provide an apparatus such that the above mentioned prior art problems are solved.
  • the objects of the present invention are achieved with an apparatus according to the characterizing portion of claim 1 , characterized in that a transport mechanism of the apparatus is arranged to guide substrate to the transport surface and from the transport surface.
  • the present invention is based on the idea of providing an apparatus a hollow cylindrical nozzle head having an output face on the inner cylinder surface and a transport surface conforming the output face such that a flexible substrate strip or web may be transported or guided in a gap, transportation path, between the output face and the transport surface and from the transport path.
  • the transport mechanism is arranged to guide a flexible elongated substrate to the transport surface and from the transport surface.
  • the flexible substrate is supplied and guided to the transport surface from a first substrate roll and to a second substrate roll from the transport surface.
  • the apparatus is further arranged such that the flexible substrate may be processed by subjecting a surface of the substrate to successive surface reactions according to the principles of atomic layer deposition when the substrate is transported along the transportation path between the output face and transport surface.
  • a transport mechanism is arranged to transport the sub- strate to the transport surface substantially perpendicularly to the central axis of the nozzle head cylinder.
  • the apparatus preferably comprises a transport mechanism having a transport cylinder comprising an opening for transporting the substrate to the transport surface substantially perpendicularly to the central axis of the nozzle head cylinder.
  • the transport cylinder may be a hollow cylinder having the opening the cylinder mantle of the transport cylinder for transporting the substrate to the transport surface substantially perpendicularly to the central axis of the nozzle head cylinder.
  • the transport cylinder is provided with a transport surface on the outer cylinder surface for transporting the substrate along the outer surface of the transport cylinder.
  • the nozzle head cylinder is provided with an output face on the inner cylinder surface for subjecting the surface of the substrate surface reactions of at least a first precursor and a second precursor.
  • the nozzle head cylinder is arranged around the transport cylinder such that the transport surface and the output face are opposite to each other for processing the surface of the substrate by transporting the substrate along the transport surface.
  • the present invention has the advantage that it provides an apparatus which enables to use rotational movement for subjecting the surface of the flexible substrate to the precursors.
  • both the flexible substrate and the nozzle may be arranged to utilize rotational movement.
  • the rotational movement decreases the stresses and forces subjected to the apparatus compared to back and forth movement of the nozzle head.
  • the present invention thus also provides efficient coating as rotational movement enables higher movement speeds for the nozzle head.
  • the present invention enhances the usage of floor area as the substrate is guided to a cylindrical path instead of conventional horizontal path.
  • the present invention also provides an apparatus in which the substrate may be supplied to a circular transport path uniformly substantially perpendicularly to the central axis of a cylindrical nozzle head.
  • Figure 1 is a schematic view showing one embodiment of the apparatus according to the present invention.
  • FIG. 1 shows schematically one embodiment of the apparatus of the present invention.
  • the apparatus comprises two cylinders 8, 2 arranged inside each other.
  • the inner cylinder is a transport cylinder 8 having an inner surface and outer surface.
  • the outer surface of the transport cylinder 8 is a transports surface 3 along which a flexible substrate 6 is guided such that it passes a cylindrical path.
  • the apparatus further comprises an outer cylinder 2 formed as a nozzle head cylinder 2 for supplying precursors such that the surface 4 of the substrate 6 is subjected to successive surface reactions by the precursors.
  • the nozzle head cylinder 2 arranged around the transport cylinder 8 for transporting and processing the substrate 6 between the transport cylinder 8 and the nozzle head cylinder 2.
  • the nozzle head cylinder 2 may comprise gas connections arranged axially or coaxially to the central axis of the nozzle head cylinder 2 for supplying and/or discharging process gases.
  • the nozzle head cylinder 2 may also comprise a bottom (not shown) which may be used for arranging the gas connections axially or coaxially to the central axis of the nozzle head cylinder 2.
  • the flexible substrate 6 may be any elongated and flexible substrate that may be guided to a circular path.
  • the substrate means a substrate itself or a powder like, particle like or separate parts or objects installed on an elongated and flexible substrate carrier.
  • the precursors used may comprise any precursors suitable for atomic layer deposition, such as ozone, TMA (trimethylaluminium), water, TiCI 4 , DEZ (diethylzinc), or precursor may also be plasma, such as NH 3 , Ar, O 2 , N 2 , H 2 or CO 2 plasma.
  • Purge gas used in the nozzle head cylinder 2 may comprise inert gas, such as nitrogen, dry air, or any other gas suitable to be used as purge gas in atomic layer deposition.
  • plasma may be used for purging, for example nitrogen or argon plasma. In that this context purge gases and precursors comprise also plasma.
  • the apparatus comprises a transport mecha- nism including the transport cylinder 8 for transporting the substrate 6 and at least one nozzle head nozzle head cylinder 2 having two or more precursor zones 14, 16 for subjecting the surface 4 of the substrate 6 to at least first and second precursors.
  • the transport cylinder 8 is provided with a transport surface 3 on the outer cylinder surface for transporting the substrate 6 along the outer surface of the transport cylinder 8.
  • the nozzle head cylinder 2 is provided with an output face 5 on the inner cylinder surface for subjecting the surface 4 of the substrate 6 surface reactions of at least a first precursor and a second precursor.
  • the nozzle head cylinder 2 is arranged around the transport cylinder 8 such that the trans- port surface 3 and the output face 5 are opposite to each other for processing the surface 4 of the substrate 6 by transporting the substrate 6 along the transport surface 3.
  • the gap forms the transports path along which the substrate 6 is transported between the transport cylinder 8 and the nozzle head cylinder 2. Therefore, a reaction space is formed between the transport surface 3 and the output face 5. Then the substrate 6 moves along the transport surface 3 the substrate surface 4 and the output face 5 for a reaction space.
  • the transport mechanism of the apparatus comprises preferably one or more transport elements provided to the transport surface 3 for guiding the substrate 6 along the transport surface 3 and enhancing the movement of the substrate 6.
  • the transport elements are formed as transport rollers 10 extending substantially in the direction of the central axis of the cylinders 2, 8.
  • the transport rollers 10 may be freely rotating rollers or driven rollers.
  • the transport element may also be for example a con- veyor belt or slide surface.
  • the apparatus comprises a first and second substrate roll 20, 22.
  • the substrate 6 may is supplied from the first substrate roll 20 to the transport path between the cylinders 2, 8 to be processed and from the transport path to the second precursor roll 22.
  • the substrate 6 may also be further supplied in the same way from the second substrate roll 22 to the first substrate roll 20.
  • the substrate 6 may be driven two or more times through the transport path between the first and second substrate roll 20, 22.
  • the substrate rolls 20, 22 may be driven such that they provide a force for moving the substrate 6 through the transport path.
  • the substrate rolls 2, 8 may be part of the apparatus or they may be sepa- rate parts that may be connected to the apparatus.
  • the substrate rolls 20, 22 may also be replaced with some other kind of receptacles for storing, supplying and receiving substrate 6.
  • the transport mechanism of the apparatus further comprises guide elements for guiding the substrate 6 to a transport path between the transport cylinder 8 or the transport surface 3 and the nozzle head cylinder 2 and from the transport path or the transport surface 3.
  • the guide elements comprise one or more guide rollers 24, 26, 28, 30 for guiding the substrate 6 to the transport surface 3 and from the transport surface 3.
  • guide rollers 24, 26 are arranged to guide the substrate 6 to opening 32 provided to the transport cylinder 8 and to a first transport roller 28 in the transport surface 3.
  • the opening 32 goes through the wall of the hollow transport cylinder 8 and extends in the direction of the central axis of the transport cylinder 8.
  • the last transport roller 30 and the second substrate roll 22 are arranged such that the substrate 6 may be guided from the transport surface 3 directly to the second substrate roll 22.
  • the guide elements, guide rollers 24, 26, 28, 30 and the first and second substrate rolls 20, 22 may also be arranged in a different manner and the present invention is not limited to the arrangement of the guide elements, guide rollers 24, 26, 28, 30 and the first and second substrate rolls 20, 22.
  • the transport mechanism may comprise one or more guide rollers, guide surfaces or other guide elements for guiding the substrate 6 to the transport surface 3 and from the transport surface 3.
  • the transport path of the substrate 6 between the cylinders is close to 360 degrees. Only the width of the opening 32 is taken out of the whole circle.
  • the transport path between the cylinders and the transport mechanism may also be arranged to transport the substrate 6 at least 180 degrees, preferably at least 270 and more preferably at least 330 degrees along the transport surface 3.
  • the transport cylinder 8 is shown in figure 1 as a hollow cylinder having a sector 32 cut off. The opening may thus be also 90 degrees or even 180 degrees.
  • the term transport cylinder comprises all these alternatives. Therefore, the trans- port cylinder 8 may also be only part of a cylinder, such as 270 degrees or 180 degrees of cylinder or of cylindrical wall of a cylinder.
  • the transport cylinder may comprise a transport surface which is only part of the cylindrical wall. It also should be noted that the opening does not have to be slit as in figure 1 , but it may also be a hole in the mantle of the transport cylinder.
  • the opening 32 enables the substrate 6 to be transported to the transport surface 3 substantially perpendicularly to the central axis of the nozzle head cylinder 2.
  • Figure 1 shows also a detailed cross sectional view of the nozzle head cylinder 2.
  • the nozzle head cylinder 2 comprises on the inner surface, on the output face 5, in succession in the following order: a purge gas zone 13, a precursor zone 14, 16 and a discharge zone 1 1 , optionally repeated a plurality of times.
  • the purge gas zone 13, precursor zone 14, 16 and the discharge zone 1 1 are arranged alternatively in succession in the direction of the circumference of the nozzle head cylinder 2.
  • the nozzle head cylinder 2 comprises on the output face 5 in succession in the following order: a first precursor zone 14, a discharge zone 1 1 , purge gas zone 13, a second precursor zone 16, a discharge zone 1 1 and a purge gas zone 13, optionally repeated a plurality of times.
  • the precursors are supplied though the precursor zones 14, 16 for subjecting the surface to surface reactions of the precursors.
  • Purge gas is supplied in the purge gas zone 13 and the precursors are discharged with the discharge zones 1 1 using suction or vacuum.
  • the precursor zones 14, 16 may be formed as channels or slits or the like extending substantially the direction of the central axis of the nozzle head cylinder 2, as shown in figure 1 .
  • the channels 14, 16, 1 1 , 13 may be ar- ranged to extend in an angle relative to the direction of the central axis of the nozzle head cylinder 2.
  • the angle between the channels 14, 16, 1 1 , 13 and the central axis may be from example 1 to 10 degrees.
  • the precursor zone 14, 16 may also be provided by precursor nozzles arranged to supply precursors.
  • the arrangement of figure 1 provides a uniform gas flow along whole length of the precursor zone 14, 16 and the purge gas zone 13, and also a uniform discharge along the discharge zone 1 1 . Therefore the precursor zones 14, 16 may be provided as precursor nozzles 14, 16 supplying precursors along the whole length of the precursor zone. Also purge gas zone 13 may be provided as a purge gas nozzle supplying purge gas along the whole length of the purge gas zone and the discharge zone 1 1 is arranged to dis- charge precursors and purge gas along the whole length of the discharge zone.
  • the output face is provided in succession in the direction of the circumference of the cylindrical nozzle head 2 in the following order: a first precursor zone 14, a purge zone 13, a second precursor zone 16 and a purge gas zone 13, optionally repeated a plurality of times.
  • the first precursor zone 14 is provided with at least one first inlet port for supplying the first precursor and at least one first outlet port for discharging the first precursor
  • the second purge gas zone 16 is provided with at least one second inlet port for supplying the second precursor and at least one second outlet port for discharging the second precursor
  • the purge zone 13 is provided with at least one third inlet port for supplying purge gas.
  • the purge gas zone 13 may also comprise one or more third outlets or alternatively purge gas may be discharged through the outlet ports of the precur- sor zones.
  • the inlet ports may be located for example to one end of a longitudinal precursor channel and purge gas channel and the outlet ports may be located to another end of the precursor channel or purge gas channel such that the purge gas and precursors may flow along the channels.
  • the inlet ports may be located substantially in the middle of a channel and the out- let ports to the opposite ends of a channel.
  • the surface 4 facing the output face 5 of the nozzle head cylinder 2 is subjected alternatively in succession to precursor zones as it is transported along the transport path between the cylinders 2, 8.
  • the output face 5 may comprise two or more precursor zones, but preferably the output face 5 comprises several precursor zones such that several growth layers may be provided on the surface 4 of the substrate 6 when it is transported through the transport path between the cylinders 2, 8.
  • the coating capacity of the apparatus may be further increased by rotating the nozzle head cylinder 2 around the central axis of the nozzle head cylinder 2.
  • the apparatus may comprise a rotating mechanism (not shown) for rotating the nozzle head cylinder 2 around the central axis of the nozzle head cylinder 2.
  • the rotating mechanism may be arranged to rotate nozzle head cylinder 2 in the transport direction of the substrate 6 along the transport surface 3 or to the opposite direction in relation to the transport direction of the substrate 6 along the transport surface 3.
  • the nozzle head cyl- inder 2 is rotated in the transport direction of the substrate 6 along the transport surface 3 the nozzle head cylinder 2 should be rotated in speed higher than the transport speed of the substrate 6.
  • Rotating the nozzle head cylinder 2 subjects the surface 4 of the substrate more times to the precursor zones 14, 16 during the time the substrate moves along the transport path.
  • the precursors and purge gas may be supplied to the nozzle head 2 via fluid connections.
  • the nozzle head 2 is provided with one or more precursor and/or purge gas containers, bottles or the like such that the precursors and/or the move together with the nozzle if the nozzle head is moved. This arrangement decreases the number of difficult fluid connections to a moving nozzle head 2.

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un appareil pour le traitement d'une surface (4) d'un substrat flexible (6). L'appareil comprend un mécanisme de transport (20, 22, 24, 26, 28, 30, 8, 10) pour transporter le substrat (6), et au moins une tête de tuyère (2) comprenant au moins deux zones de précurseurs (14, 16) pour soumettre la surface (4) du substrat (6) à au moins un premier et un deuxième précurseur. Selon l'invention, le mécanisme de transport (20, 22, 24, 26, 28, 30, 8, 10) comprend un cylindre de transport (8), et la tête de tuyère prend la forme d'une tuyère cylindrique (2) disposée autour du cylindre de transport (8), afin de transporter et traiter le substrat (6) entre le cylindre de transport (8) et la tuyère cylindrique (2).
PCT/FI2011/050743 2010-08-30 2011-08-25 Appareil WO2012028776A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201180041755.0A CN103108985B (zh) 2010-08-30 2011-08-25 用于处理柔性基底的表面的装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20105906A FI20105906A0 (fi) 2010-08-30 2010-08-30 Laite
FI20105906 2010-08-30

Publications (1)

Publication Number Publication Date
WO2012028776A1 true WO2012028776A1 (fr) 2012-03-08

Family

ID=42669410

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FI2011/050743 WO2012028776A1 (fr) 2010-08-30 2011-08-25 Appareil

Country Status (4)

Country Link
CN (1) CN103108985B (fr)
FI (1) FI20105906A0 (fr)
TW (1) TW201219596A (fr)
WO (1) WO2012028776A1 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2483441A1 (fr) * 2009-09-30 2012-08-08 Synos Technology, Inc. Réacteur de dépôt en phase vapeur pour former une couche mince sur une surface courbe
US8470718B2 (en) 2008-08-13 2013-06-25 Synos Technology, Inc. Vapor deposition reactor for forming thin film
WO2013140021A1 (fr) * 2012-03-23 2013-09-26 Picosun Oy Procédé et appareils de dépôt de couche atomique
DE102012111484A1 (de) * 2012-11-27 2014-05-28 Aixtron Se Vorrichtung und Verfahren zum Bearbeiten streifenförmiger Substrate
US8758512B2 (en) 2009-06-08 2014-06-24 Veeco Ald Inc. Vapor deposition reactor and method for forming thin film
US8840958B2 (en) 2011-02-14 2014-09-23 Veeco Ald Inc. Combined injection module for sequentially injecting source precursor and reactant precursor
US20180251896A1 (en) * 2012-07-09 2018-09-06 Beneq Oy Apparatus for processing substrate
WO2022124897A1 (fr) 2020-12-08 2022-06-16 Kalpana Technologies B.V. Traitement rouleau à rouleau

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005133165A (ja) * 2003-10-31 2005-05-26 Masahito Yonezawa 帯状基板の処理装置及び処理方法
US20050172897A1 (en) * 2004-02-09 2005-08-11 Frank Jansen Barrier layer process and arrangement
WO2007106076A2 (fr) * 2006-03-03 2007-09-20 Prasad Gadgil Appareil et procede destines a un traitement chimique en phase vapeur de minces films par couche atomique multiple sur une zone etendue
JP2009052063A (ja) * 2007-08-24 2009-03-12 Dainippon Printing Co Ltd ガスバリア膜の作製方法及び作製装置並びにガスバリアフィルム
WO2011014762A1 (fr) * 2009-07-31 2011-02-03 E. I. Du Pont De Nemours And Company Appareil de dépôt de couche atomique
WO2011041255A1 (fr) * 2009-09-30 2011-04-07 Synos Technology, Inc. Réacteur de dépôt en phase vapeur pour former une couche mince sur une surface courbe
WO2011099858A1 (fr) * 2010-02-11 2011-08-18 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Procédé et appareil de dépôt de couches atomiques sur un substrat

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005133165A (ja) * 2003-10-31 2005-05-26 Masahito Yonezawa 帯状基板の処理装置及び処理方法
US20050172897A1 (en) * 2004-02-09 2005-08-11 Frank Jansen Barrier layer process and arrangement
WO2007106076A2 (fr) * 2006-03-03 2007-09-20 Prasad Gadgil Appareil et procede destines a un traitement chimique en phase vapeur de minces films par couche atomique multiple sur une zone etendue
JP2009052063A (ja) * 2007-08-24 2009-03-12 Dainippon Printing Co Ltd ガスバリア膜の作製方法及び作製装置並びにガスバリアフィルム
WO2011014762A1 (fr) * 2009-07-31 2011-02-03 E. I. Du Pont De Nemours And Company Appareil de dépôt de couche atomique
WO2011041255A1 (fr) * 2009-09-30 2011-04-07 Synos Technology, Inc. Réacteur de dépôt en phase vapeur pour former une couche mince sur une surface courbe
WO2011099858A1 (fr) * 2010-02-11 2011-08-18 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Procédé et appareil de dépôt de couches atomiques sur un substrat

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8470718B2 (en) 2008-08-13 2013-06-25 Synos Technology, Inc. Vapor deposition reactor for forming thin film
US8758512B2 (en) 2009-06-08 2014-06-24 Veeco Ald Inc. Vapor deposition reactor and method for forming thin film
EP2483441A4 (fr) * 2009-09-30 2013-05-15 Synos Technology Inc Réacteur de dépôt en phase vapeur pour former une couche mince sur une surface courbe
EP2483441A1 (fr) * 2009-09-30 2012-08-08 Synos Technology, Inc. Réacteur de dépôt en phase vapeur pour former une couche mince sur une surface courbe
US8840958B2 (en) 2011-02-14 2014-09-23 Veeco Ald Inc. Combined injection module for sequentially injecting source precursor and reactant precursor
WO2013140021A1 (fr) * 2012-03-23 2013-09-26 Picosun Oy Procédé et appareils de dépôt de couche atomique
CN104204290A (zh) * 2012-03-23 2014-12-10 皮考逊公司 原子层沉积方法和装置
JP2015512471A (ja) * 2012-03-23 2015-04-27 ピコサン オーワイＰｉｃｏｓｕｎ Ｏｙ 原子層堆積方法および装置
EP2841621A4 (fr) * 2012-03-23 2016-03-16 Picosun Oy Procédé et appareils de dépôt de couche atomique
US20180251896A1 (en) * 2012-07-09 2018-09-06 Beneq Oy Apparatus for processing substrate
DE102012111484A1 (de) * 2012-11-27 2014-05-28 Aixtron Se Vorrichtung und Verfahren zum Bearbeiten streifenförmiger Substrate
WO2022124897A1 (fr) 2020-12-08 2022-06-16 Kalpana Technologies B.V. Traitement rouleau à rouleau
NL2027074B1 (en) 2020-12-08 2022-07-07 Kalpana Tech B V Roll-to-roll processing

Also Published As

Publication number Publication date
FI20105906A0 (fi) 2010-08-30
CN103108985A (zh) 2013-05-15
TW201219596A (en) 2012-05-16
CN103108985B (zh) 2015-02-11

Similar Documents

Publication Publication Date Title
WO2012028776A1 (fr) Appareil
KR101942605B1 (ko) 원자 레이어를 기판에 증착하는 방법 및 장치
KR102267234B1 (ko) 기판 상에 원자 층을 증착시키는 장치 및 방법
US9783888B2 (en) Atomic layer deposition head
US10676822B2 (en) Method and apparatus for depositing atomic layers on a substrate
US9803281B2 (en) Nozzle head and apparatus
US9683291B2 (en) Apparatus for processing surface of substrate and nozzle head
US10513776B2 (en) Method for coating a substrate
WO2012028771A1 (fr) Appareil
WO2012028777A1 (fr) Appareil
WO2012028779A1 (fr) Appareil
WO2012028775A1 (fr) Tête de tuyère

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201180041755.0

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11821167

Country of ref document: EP

Kind code of ref document: A1

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11821167

Country of ref document: EP

Kind code of ref document: A1