TW201219596A - Apparatus - Google Patents

Apparatus Download PDF

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Publication number
TW201219596A
TW201219596A TW100130644A TW100130644A TW201219596A TW 201219596 A TW201219596 A TW 201219596A TW 100130644 A TW100130644 A TW 100130644A TW 100130644 A TW100130644 A TW 100130644A TW 201219596 A TW201219596 A TW 201219596A
Authority
TW
Taiwan
Prior art keywords
substrate
precursor
nozzle head
cylinder
transmission
Prior art date
Application number
TW100130644A
Other languages
Chinese (zh)
Inventor
Jari Sinkko
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Publication of TW201219596A publication Critical patent/TW201219596A/en

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • C23C16/545Apparatus specially adapted for continuous coating for coating elongated substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45544Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention relates to an apparatus for processing a surface (4) of a flexible substrate (6). The apparatus comprising transport mechanism (20, 22, 24, 26, 28, 30, 8, 10) for transporting the substrate (6) and at least one nozzle head (2) comprising two or more precursor zones (14, 16) for subjecting the surface (4) of the substrate (6) to at least first and second precursors. According to the invention the transport mechanism (20, 22, 24, 26, 28, 30, 8, 10) comprises a transport cylinder (8) and the nozzle head is formed as a nozzle head cylinder (2) arranged around the transport cylinder (8) for transporting and processing the substrate (6) between the transport cylinder (8) and the nozzle head cylinder (2).

Description

201219596 無0 六、發明說明: 【發明所屬之技術領域】 本發明係有關於一種裝置,藉由使一撓性基底之一表 面受至少一第一前驅物及一第二前驅物之連續表面反應而 對於基底之表面進行處理,特別是根據申請專利範圍第工 項之前言之一裝置。 【先前技術】 於習知技術之數種裝置類型中,根據原子層沈積 (atomic layer deposition method, ALD)之原理是利用這 些裝置及喷嘴頭使-基底之一纟面受至少—第一前驅物及 一第二前驅物之連續表面反應而對基底之表面進行處理。 在ALD應用中,一般是經由分開階段將兩氣體前驅物引入 ALD反應器中。氣體前驅物有效地與基底之表面進行反應 下形成f原、子層之沈積。一般而言’前驅物階段是緊 接於一清除階段之後或與清除階段分開的方式進行,在引 入其它不同前驅物之前是需藉由前驅物階段去除基底表面 上之過量前驅物。因此ALD製程f要依序交替方式將 複數前驅物流動至基底表面。此重覆的交替表面反應順序 及介於其間之清除階段即為一般ALD沈積循環。 習知技術中之ALD裝置通常包括—喷嘴頭,此喷嘴頭 具有使基底之表面受第一前驅物之作用之一或多個第一前 201219596 驅物區域、具有使基底之表面受第二前驅物之作用之一或 夕個第一刖驅物區域’以及具有使基底之表面受一清除氣 體之作用之一或多個清除氣體區域或具有使基底之表面受 一清除氣體之作用且設置於第一前驅物區域及第二前驅物 區域之間之一或多個清除氣體區域。於喷嘴頭中之複數區 域是以交錯連續方式設置:第一前驅物區域、清除氣體區 域、第二前驅物區域、清除氣體區域、第一前驅物區域、 清除氣體區域、第二前驅物區域等。因此,當喷嘴頭於基 底之表面上移動時,依照ALD方法可於基底之表面上製作 生長層。喷嘴頭亦可包括排放通道,這些排放通道可設置 於第一前驅物區域及第二前驅物區域之間或於一第一前驅 物區域及一清除氣體區域之間或於一第二前驅物區域及一 清除氣體區域之間。在基底之表面受前驅物作用之後,利 用排放通道對於前驅物及清除氣體進行排放。可替代地, 於各習知技術中之前驅物區域及清除氣體區域包括用於供 應前驅物或清除氣體之至少一入口埠及用於排放前驅物或 清除氣體之至少一出口埠。因此,在基底之表面受前驅物 之作用後’利用各前驅物區域及各清除氣體區域所提供之 吸取作用對於前驅物或清除氣體進行排放。 由於一次ALD循環期間僅能於基底之表面上製作單— 原子層’在藉由具有複數第一區域及第二區域之喷嘴頭的 作用下,於喷嘴頭對基底之表面進行單次掃描下便可在基 底之表面上形成複數原子層,並且喷嘴頭之單次掃描是可 經由噴嘴頭或基底之移動而達成。於習知技術中,利用一 201219596 、噴嘴碩進行一快速前後下是可增加.·喷 掃描次數,如迚以、* μ & 哭項之一 匕以達到對於基底之表面之多次掃描。然而, :於製作複數原子層之習知技術的缺點在於其移動機構 ,後移動過程中產生大的機械力且喷嘴頭必須抵抗此機 械力’當移動機構對已停止於結束位置之喷嘴頭再次加速 移動時所產生機械力更是特別的a,因此容易造成裝 喷嘴頭之損壞。 【發明内容】 本發月之目的在於提供一種裝置,藉此以解決上述習 、技術的問題。依照申請專利範圍第】項之裝置的特徵部 、達成本發B月之目的,其特徵在於··傳輸機構設置用於 將基底導引至傳輸表面及對於來自傳輸表面之基底 引。 附屬項中對於本發明之較佳實施例進行說明。 本發明之構想在於提供具有一中空圓柱形喷嘴頭及一 傳輸表面之一種裝置,圓柱形噴嘴頭之内圓柱上具有一輸 出面,傳輸表面係·致於圓柱形喷嘴頭之輸出自,如此一 撓性條狀物或腹板可被傳輸或導引至圓柱形噴嘴頭之輸出 面及傳輸圓枝之傳輸表面間之一間隙、傳輸路徑,並且對 於來自傳輸路徑之撓性條狀物或腹板進行導引。換言之, 傳輸機構設置用於將-撓性長條形基底導弓丨至傳輸表面及 對於來自傳輸表面之基底進行導引。於一實施例中,一撓 性基底可自—第一基底滾輪供應且導引至傳輪表面,並且 201219596 可將撓性基底自傳輪 ., 面供應且導引至一第二基底滾輪。- 步設置下,當基底沿著輸出面及傳 輸表面間之傳輪路徑進 4 .. s ^ a /θ 仃傳輸時,根據原子層沈積原理使 付撓性基底之一表面a 又連續表面反應。一傳輸機構用於將 基底傳輸至實質垂直於 ,、赁嘴碩圓柱之中心軸之傳輸表面。 本發明之裝置較佳包括 括具有—傳輸圓柱之一傳輸機構,傳 輸圓柱包括用於傳輪其佐s & 土底至傳輸表面之一開口,傳輸表面 實質垂直於噴嘴頭圓私夕+ 之中心轴。傳輸圓柱係為具有開口 之中工圓柱,開口位於傳輸圓柱之圓柱外罩中,用於傳 輸基底至傳輸表面,值仏主 a 傳輸表面貫質垂直於喷嘴頭圓柱之中 心轴。傳輸圓柱之外圓柱表面上具有一傳輸表面,用於沿 著傳輸圓柱之外表面對於基底進行傳輸。此外,喷嘴頭圓 柱之内圓柱表面上具有一輸出面使一撓性基底之一表 面又至乂一第一前驅物及一第二前驅物之連續表面反應。 喷嘴頭圓柱係沿著傳輸圓柱進行設置,使得傳輸機構之傳 輸表面及噴嘴頭圓柱之輸出面彼此相對,藉由將基底沿著 傳輸機構之傳輸表面進行傳輸下對於基底之表面進行處 理。 本發明具有之優點在於提供一種裝置,此裝置可利用 迴轉運動使基底之表面受前驅物之反應。於本發明中,經 設置之撓性基底及喷嘴二者均可利用迴轉運動進行轉動。 相較於噴嘴頭之前後移動方式,利用迴轉運動可減少本發 明之裝置所受應力及力量。因為迴轉運動可使得喷嘴頭具 有較而移動速度,因而可增加本發明之裝置之有效塗佈。 201219596 由於本發-明利.用一圓柱形路徑取代冑統水平路 於基底進订傳輸’因此本發明可增加樓板面積使用率。本 發明亦提供—種可將基底供應至—圓形傳輸路徑之裝置 此圓形傳輸路徑均句實質垂直於一圓柱形喷嘴頭:中心 轴。 【實施方式】 第1圖示意地表示根據本發明之裝置之一實施例。本 發明之裝置包括以在内設置之兩圓柱8、2。内圓柱係為一 傳輸圓柱8,並且傳輸圓柱8具有一内表面及一外表面。 傳輸圓柱8之外表面係為一傳輸表面3,一撓性基底6沿 著傳輸表面3進行導引,如此基底6是以一圓柱形路徑進 行傳輸。本發明之裝置更包括一外圓柱2,此外圓柱2形 成為一喷嘴頭圓柱2,利用喷嘴頭圓柱2供應前驅物,如 此使传基底6之表面4受至少前驅物之連續表面反應。如 第1圖所示,沿著傳輸圓柱8而設置之喷嘴頭圓柱2係用 於對傳輸圓柱8及喷嘴頭圓柱2間之基底6進行傳輸及處 理。因此’於傳輸圓柱8及喷嘴頭圓枉2之間具有一間隙’ 基底6係於傳輸圓柱8及喷嘴頭圓杜2間之間隙内、以沿 著至少部分圓柱形或圓形傳輸路徑進行傳輸。21喷嘴頭圓 柱2可包括複數氣體連接件,這些氣體連接件係以軸向或 同軸於喷嘴頭圓柱2之中心軸設置而對於處理氣體進行供 應及/或排放。噴嘴頭圓柱2亦可包括一底部(未圖示)’以 軸向或同軸於喷嘴頭圓柱2之中心轴進行設置之氣體連接 201219596 件係可配置於喷嘴頭圓柱2之底部。 . 基底6可為適於沿一圓形路徑進行導引之任何長條形及 挽性基底。 ' 在本說明書中’基底是表示其本身或安裝在—長條形 且撓性基底載具之上之像粉末、像粒子或分離件或物件。 所使用的前驅物可包括任何適用於原子層沈積之任何前驅 物例如.臭氧、二甲紹(七1^[116七|1丫1311111^11:[11111,>|^八)、水、 四氯化鈦(TiCl4)、二乙基鋅(diethylzinc,DEZ),或前驅 物亦可為電漿,例如:氨(NH3)、氬(Ar)、氧(〇2)、氮(N2)、 氫(HO或二氧化碳(c〇2)電漿。於喷嘴頭圓柱2所使用之清 除氣體可包括鈍氣,例如:t氣、乾空氣或適用於在原子 層沈積中做為清除氣體之其它氣體。電漿亦可用於進行清 除作業’例如:氮或氬電毁。於本說明書中,清除氣體及 前驅物亦可為電漿。 根據第1圖,本發明之裝置包括一傳輸機構及至少一 喷嘴頭圓柱2 ’傳輸機構包括用於傳輸基& 6之一傳輸圓 柱8’喷嘴頭圓柱2包括用於使基底6之表面4受至少第 -前驅物及第二前驅物之作用之二或多個前驅物區域14、 16。如上所述,於傳輸圓柱8之外圓柱表面上具有一傳輸 表面3 ’ #由傳輸表面3使得基底6沿著傳輸圓柱8之外 圓柱表面進行傳輸。據此,喷嘴頭餘2之關柱表面上 具有-輸出面5’藉由輸出自5使基底6之表面*受至少 一第一前驅物及一第二前驅物之連續表面反應。如第i圖 所示,喷嘴頭圓柱2係、沿著傳輸圓柱8進行設置,使得傳 201219596 輸機構之傳輸表面3及_喷 對,如此藉由將基底6沿 圓柱.2之輸出面5.彼此相 輸下可對於基底6之表面 輪機構之傳輸表面3進行傳 表面3及喷嘴頭圓柱2 行處理。於傳輸機構之傳輪 圓柱8及噴嘴頭圓柱 》面5間具有-間隙,於傳輪 开D禮私圓柱2間所傳輪之基底6係沿著此間隙所 形成之傳輸路徑進行移動 线間隙所 3及喷嘴頭圓柱2之輪出面5於傳輸機構之傳輪表面 基底6沿著傳輸機構:傳輪1^ 面4及喷嘴頭圓柱2之輸 進订傳輸,基底6之表 彻出面5朝向反應空間。 之4=置之傳輸機構較佳包括設置於傳輸表面3 ::夕個傳輸元件’藉由傳輪元件導引基 3 表面3進抒銘叙日考得輪 運仃移動且加速基底6之移動。於 中,傳輸元件係形成為傳輸滾輪丨 實施例 =著喷嘴頭圓柱2及傳輸圓柱8二:=二實 二:輸滚輪Π)可為自由轉動滾輪或被動滾輪。傳 亦可為一輸送帶或一滑動表面。 牛 如第1圖所示,本發明之萝罟白 及-第二基底…。基底…第:基::底::: 至位在喷嘴頭圓柱2及傳輸圓柱8間之傳輸路徑= 理’並且基广“可由位在喷嘴頭圓柱2及傳輸圓柱8 = :輪路牷而供應至第二基底滚輪22。基底6亦可 式而自第二基底滾輪22供應至第—基底滾輪2〇。再者, 土底6可進行二或多次的驅動以通過 圓柱8間之傳於路卜另夕卜®柱2及傳輪 1之傳輸路仅。另外’精由驅動第一基底滾輪 201219596 第二基底滾輪22’利用第—基底滾.輪2()及第二基言滚輪 22所提供之-力量使得基底6移動通過喷嘴頭圓柱2及傳 輸圓柱8間之傳輸路徑。需注意的是,噴嘴頭圓柱2及傳 輸圓柱8可為本發明之裝置之部件’或噴嘴頭圓柱2及傳 第〜 進行 利用 輸圓柱8可為可連接於本發明之裝置之可分離部件 基底滾輪20、第二基底滾輪22亦可由用於對基底 儲存、供應及接收之其它某些種類的容器所取代。 本發明之裝置之傳輸機構更包括複數導引元件4^ 複數導引元件將基底6導引至傳輸圓8或傳輸表面= 噴嘴頭陳2間之傳輸路徑,並且利用複數導引元件對衣 來自傳輸圓柱8及喷嘴頭陳2間之傳輸路徑或傳輸“ 3之基底6進行導引。於第丨圖之實施例中,複數導弓丨_ 件包括-或多個導引滾輪24、26、28、3〇,利用導引滾: 24、26、28、3G將基底6導引至傳輸表面3或自傳輸表适 3對於基底6進行導引。於第丄圖中,導引滾輪24、心 用於將基底6導引至傳輸圓柱8之開口犯及位在傳輸機相 之傳輸表面3中之一第一傳輸滾輪28。開口 &通過中访 傳輪圓柱8之壁且沿著傳輸圓柱8之中心轴方“延/ 藉由所設置之最末傳輸滚輪30及第二基底滾輪22,基底 可由傳輸機構之傳輸表面3直接地導引至笛' 弟—基底滾軺 2。然而,需注意的是,導引元件、導引滾輪24、μ、μ 3〇、第一基底滾輪20及第二基底滾輪22亦可以 、 J M +同方3 進行設置,並且本發明並不限定於導引元件、導引滾幹24 28、30、第一基底滚輪20及第二基底滾輪22之配置 10 201219596 -因此-,傳輸機構可包括一或多,導引滾輪、導 它導引元件,藉此將基底6導引至傳輸機 :其. 並且對於來自傳輸機構之傳輸表面3之基底6:行表導;? :第1圖可看出’於喷嘴頭圓柱2及傳輸圓柱8間之 土 -之傳輸路徑係接近360度,僅由整個圓形中取出門 口…度。然而,喷嘴頭圓柱2/傳輸圓 :: 構間之傳輸路徑亦可採用18〇度對於基底=輪: :::=及更佳至少以33。度沿著傳輸機= ==::::。需:意的是,第1㈣輸 圓枝之n 柱32。因此,傳輸 开口亦可為90度或甚至18〇度。於本說明書中,傳 輸圓柱-詞包括所有這些選擇。因此,傳輸圓…可僅 為-圓柱的-部分,例如:―圓柱或—圓柱之圓柱形壁之 一〇度或180度。因此’傳輸圓柱可包括僅為圓柱形壁之 一部分之-傳輸表面。亦需注意的是,傳輸圓柱之開口可 不必如同…中之切割方式而形成,開口亦可採用形成 於傳輪圓柱之圓柱外罩中之一孔洞。藉由傳輸圓柱8之開 可將基底6傳輪至實質垂直於噴嘴頭圓柱2之中心軸 之傳輸表面3。 第1圖亦表示噴嘴頭圓柱2之詳細剖面圖。喷嘴頭圓 柱2之内表面上之輪出面5連續包括以下順序:可選擇地 重覆複數次之一清除氣體區$ 13、-前驅物區域14、16 及一排放區域U。清除氣體區域13、前驅物區域14、16 及排放區域11係沿著噴嘴頭圓柱2之圓周方向連續交錯設 11 201219596 置。如第Γ圖所示,噴嘴頭圓柱2之輸出面5連續包括以-下順序:可選擇地重覆複數次之一第一前驅物區域14、一 排放區域11、一清除氣體區域13、一第二前驅物區域16、 一排放區域11及一清除氣體區域13。經由第一前驅物區 域14及第二前驅物區域16供應前驅物而使得基底之表面 受前驅物之表面反應。在吸取或真空的作用下,清除氣體 係供應至清除氣體區域13 11所排放。如第1圖所示,第一前驅物區域14及第二前 驅物區域16可形成為通道或切口或類似物,這些通道或切 口或類似物實質沿著噴嘴頭圓柱2之中心軸方向而延伸。 於一可替代實施例中,複數通道14、1 6、11、13實質沿著 相對於喷嘴頭圓柱2之中心軸方向之一角度而延伸,於通 道14、16、11、13及中心轴間之角度可介於丨至1〇度之 間。第一前驅物區域14及第二前驅物區域16亦可由前驅 物噴嘴所提供,藉由前驅物喷嘴以供應前驅物。 藉由第1圖之配置下可沿著第一前驅物區域14/第二 前驅物區域16及清除氣體區域13提供一均勻氣流且可沿 著排放區们旧一均句排放。因此,第—前驅物區: 14及第二前驅物區域16可提供做為前驅物喷嘴I*' 16 藉由前驅物喷嘴14、16沿著前驅物區域之全县 刚 物。清除氣體區域13亦可提供做為一清除氣體噴嘴,藉由 清除氣體喷嘴沿著清除氣體區域之全長進行清除氣體^供 應,並且排放區域11用於沿著排放區域之 " 焚進行前驅物 及清除氣體之排放。 12 201219596 —..... 於—可替代實施例中,連續沿著噴嘴頭圓柱2-之周邊 所提供之輸出面包括以下順序:可選擇地重覆複數次之一 第一前驅物區域14、一清除區域13、一第二前驅物區域 16及一清除氣體區域13。於本實施例中,第一前驅物區域 14具有用於供應第一前驅物之至少一第一入口埠及用於排 放第一前驅物之至少一第一出口埠,第二前驅物區域16具 有用於供應第二前驅物之至少一第二〜口淳及用於排放第 二前驅物之至少_第二出口埠’並且清除區域13具有用於 供應清除氣體之至少-第三人口埠。清除氣體區域13亦可 包括或多個第三出口埠或可替代地將清除氣體經由前驅 物區域之出口埠進行排放。舉例而言,入口蜂可位於一縱 長前驅物通道及清除氣體通道之-端部,並且出口痒可位 於前驅物通道或清除氣體通道 端部,如此使得前驅 及>月除氣體可沿著通道流動。可#代地,人口蟑可位於 一通道之中間,並且出^可位p通道之相對端部。' 柱2 fUZ所7F ’當基底6沿著傳輸圓柱8及噴嘴頭圓 2間之傳輸路徑進行傳輸時,朝向喷嘴頭圓柱2之輸出 面5的基底6之表面4受前驅物 、、主立的曰& 4又剛驅物區域之連續交錯作用。需 “的疋,嗔嘴頭圓柱2之輸出面5可包 物區域,但較佳噴嘴頭圓柱2之輸出-驅 區域’當基底6經由嘖嘴頭圓扣… 數個别驅物 路徑進行傳輸時… 傳輸圓柱8間之傳輸 延仃傳輸時,如此可將數 面4上。 玍長層形成於基底6之表 藉由繞著噴嘴頭圓柱2之 Ψ軸進仃轉動下更可增加 13 201219596 •本發明之-裝置-之,塗 轉機構(未圖示),趣轉機厂本發明之裝置可包括一-迴· 嘴頭圓柱2之中、、& f用於轉動喷嘴頭圓柱2繞著喷 沿著傳輸機構8:傳=轉機構係朝基底6之傳輸方向、 機構係朝相對於基居:3面3轉動喷嘴頭圓柱2,或迴轉 ^ ο ^ " 之傳輪方向之相反方向、沿著傳輸 機構8之傳輪表面 ^ ^ ^ ^ 轉動噴嘴頭圓柱2。當喷嘴頭圓柱2 朝基底6之傳輪方向 链私拉 ,^ 〇者傳輪機構8之傳輸表面3進行 轉動時,噴嘴頭圓柱2 叙 ♦直泛 %乂向於基底6之傳輸速度進行轉 動。於基底6沿著傳給故,_ 9 ,, /θ ^ . 輸路後移動之期間,轉動噴嘴頭圓柱 使付基:6之表面4多:欠受到前驅物區域…以之作用。 ▲底6傳輸通過傳輪路#時,多個生長層便會形 成於基底之表面上。此 m,驅物及清除氣體可經由流體連接件 而供應至噴嘴頭^ J管代地,噴嘴頭2具有一或多個前 驅物及/或清除顏<§*安gg , 、、 瓶或類似物,使得前驅物及/或 >月除氣體可與噴嘴頭2 』野移動,藉此配置可減少連接至 -移動喷嘴頭2之需高度技術流體連接件之數量。 因為本發明之技術優點,本發明之概念可經由各種方 式加以實施,對於熟習此項技藝者是顯而易見的。雖然較 佳實施例揭露如上,鈇1 上”、、、其並非用以限制本發明及其實施 例,在不脫離本發明之籍抽 令赞月之精神和範圍内,當可做更動與潤飾。 【圖式簡單說明】 明之相關較佳實施例進 以下將配合所附圖式針對本發 行詳述如下·· 14 201219596 第1圖-表·示根據本發明之裝置之一實施例之示意圖 【主要元件符號說明】 2~噴嘴頭圓柱; 4〜表面; 6 ~基底; 1 0〜傳輸滾輪; 13~清除氣體區域; 16~第二前驅物區域; 22〜第二基底滾輪; 32~開口0 3 ~傳輸表面; 5~輸出面; 8〜傳輸機構; 11〜排放區域, 14〜第一前驅物區域; 20〜第一基底滾輪; 24、26、28、30〜導引滚輪; 15201219596 No. 6. Description of the Invention: [Technical Field] The present invention relates to a device for subjecting a surface of a flexible substrate to a continuous surface reaction of at least a first precursor and a second precursor The surface of the substrate is treated, in particular in accordance with one of the preambles of the scope of the patent application. [Prior Art] Among several types of devices of the prior art, according to the principle of atomic layer deposition (ALD), these devices and nozzle heads are used to make one of the substrates facing at least the first precursor. And treating the surface of the substrate with a continuous surface reaction of a second precursor. In ALD applications, two gas precursors are typically introduced into the ALD reactor via separate stages. The gas precursor effectively reacts with the surface of the substrate to form a deposit of the f-sublayer and the sub-layer. In general, the precursor phase is carried out immediately after or in a separate phase from the purge phase, and excess precursors on the surface of the substrate are removed by the precursor phase prior to introduction of the other precursors. Therefore, the ALD process f flows the complex precursors to the surface of the substrate in an alternating manner. This repeated alternating surface reaction sequence and the intermediate phase between them are the general ALD deposition cycles. The ALD device of the prior art generally includes a nozzle head having a surface for subjecting the surface of the substrate to the first precursor or a plurality of first pre-201219596 flooding regions, having the surface of the substrate subjected to the second precursor One of the functions of the object or the first first ramming region 'and one or more of the scavenging gas regions having the surface of the substrate subjected to a scavenging gas or having the surface of the substrate subjected to a scavenging gas and disposed on One or more purge gas regions between the first precursor region and the second precursor region. The plurality of regions in the nozzle head are disposed in a staggered continuous manner: a first precursor region, a purge gas region, a second precursor region, a purge gas region, a first precursor region, a purge gas region, a second precursor region, and the like . Therefore, when the nozzle head is moved on the surface of the substrate, a growth layer can be formed on the surface of the substrate in accordance with the ALD method. The nozzle head may also include a discharge passage disposed between the first precursor region and the second precursor region or between a first precursor region and a purge gas region or a second precursor region And a gas removal zone. After the surface of the substrate is subjected to the precursor, the discharge channel is used to discharge the precursor and the purge gas. Alternatively, in the prior art, the precursor region and the purge gas region include at least one inlet port for supplying the precursor or purge gas and at least one outlet port for discharging the precursor or purge gas. Therefore, after the surface of the substrate is subjected to the action of the precursor, the suction effect provided by each of the precursor regions and the respective purge gas regions is discharged to the precursor or purge gas. Since the single-atomic layer can only be fabricated on the surface of the substrate during one ALD cycle, the nozzle head is subjected to a single scan on the surface of the substrate by the nozzle head having the plurality of first regions and the second region. A plurality of atomic layers can be formed on the surface of the substrate, and a single scan of the nozzle tip can be achieved via movement of the nozzle tip or substrate. In the prior art, using a 201219596, the nozzle can perform a fast scan, and the number of scans, such as 迚, * μ & cry, can be used to achieve multiple scans of the surface of the substrate. However, a disadvantage of the prior art in making a plurality of atomic layers is that the moving mechanism generates a large mechanical force during the rear movement and the nozzle head must resist the mechanical force 'when the moving mechanism is again on the nozzle head that has stopped at the end position The mechanical force generated when accelerating the movement is even more special, so it is easy to cause damage to the nozzle tip. SUMMARY OF THE INVENTION The purpose of this month is to provide an apparatus for solving the above problems of the prior art. According to the features of the device of the scope of the patent application, the purpose of the present invention is that the transport mechanism is provided for guiding the substrate to the transport surface and for guiding the substrate from the transport surface. Preferred embodiments of the present invention are described in the dependent items. The idea of the present invention is to provide a device having a hollow cylindrical nozzle head and a transmission surface. The cylindrical nozzle head has an output surface on the inner cylinder, and the transmission surface is derived from the output of the cylindrical nozzle head. The flexible strip or web can be transported or guided to a gap between the output face of the cylindrical nozzle head and the transfer surface of the transfer branch, the transport path, and for flexible strips or belly from the transport path The board is guided. In other words, the transport mechanism is configured to guide the flexible elongate substrate to the transport surface and to guide the substrate from the transport surface. In one embodiment, a flexible substrate can be supplied from the first substrate roller and guided to the surface of the transfer wheel, and 201219596 can supply and guide the flexible substrate self-propelled wheel to a second substrate roller. - Step setting, when the substrate is transported along the transfer path between the output surface and the transfer surface, the surface a of the flexible substrate is continuously surface-reacted according to the principle of atomic layer deposition. . A transport mechanism is used to transport the substrate to a transport surface that is substantially perpendicular to the central axis of the nozzle. Preferably, the apparatus of the present invention comprises a transmission mechanism having a transmission cylinder, the transmission cylinder comprising an opening for transmitting the s & soil bottom to the transmission surface, the transmission surface being substantially perpendicular to the nozzle head The central axis. The transmission cylinder is a cylinder with an opening in the cylindrical outer casing of the transmission cylinder for transporting the substrate to the transmission surface, and the value of the main a transmission surface is perpendicular to the central axis of the nozzle head cylinder. Outside the transfer cylinder there is a transfer surface on the surface of the cylinder for transporting the substrate along the outer surface of the transfer cylinder. In addition, the inner cylindrical surface of the nozzle tip cylinder has an output surface for reacting one surface of a flexible substrate to a continuous surface of a first precursor and a second precursor. The nozzle head cylinder is disposed along the transfer cylinder such that the transport surface of the transport mechanism and the output surface of the nozzle head cylinder are opposite each other, and the surface of the substrate is treated by transporting the substrate along the transport surface of the transport mechanism. The present invention has the advantage of providing a device that utilizes a rotary motion to subject the surface of the substrate to the reaction of the precursor. In the present invention, both the flexible substrate and the nozzle which are provided can be rotated by the rotary motion. The use of the swivel motion reduces the stress and strength of the device of the present invention compared to the manner in which the nozzle head moves forward and backward. Since the swivel movement allows the nozzle head to have a relatively high moving speed, the effective coating of the apparatus of the present invention can be increased. 201219596 The present invention can increase the floor area usage rate due to the fact that the present invention uses a cylindrical path instead of a horizontal path for substrate-bound transmission. The present invention also provides a device for supplying a substrate to a circular transmission path. The circular transmission path is substantially perpendicular to a cylindrical nozzle tip: a central axis. [Embodiment] Fig. 1 is a view schematically showing an embodiment of a device according to the present invention. The apparatus of the present invention includes two cylinders 8, 2 disposed therein. The inner cylinder is a transmission cylinder 8, and the transmission cylinder 8 has an inner surface and an outer surface. The outer surface of the transfer cylinder 8 is a transport surface 3, and a flexible substrate 6 is guided along the transport surface 3 such that the substrate 6 is transported in a cylindrical path. The apparatus of the present invention further includes an outer cylinder 2, and further the cylinder 2 is formed as a nozzle head cylinder 2, and the precursor is supplied by the nozzle head cylinder 2, whereby the surface 4 of the transfer substrate 6 is subjected to at least a continuous surface reaction of the precursor. As shown in Fig. 1, the nozzle head cylinder 2 disposed along the transfer cylinder 8 is used for transporting and processing the substrate 6 between the transfer cylinder 8 and the nozzle head cylinder 2. Therefore, 'there is a gap between the transfer cylinder 8 and the nozzle head circle 2'. The base 6 is connected in the gap between the transfer cylinder 8 and the nozzle head circle 2 for transmission along at least a partial cylindrical or circular transmission path. . The nozzle tip cylinder 2 can include a plurality of gas connections that are supplied and/or discharged to the process gas in an axial or coaxial arrangement with the central axis of the nozzle head cylinder 2. The nozzle head cylinder 2 may also include a bottom (not shown) for gas connection axially or coaxially with the central axis of the nozzle head cylinder 2. The 201219596 piece may be disposed at the bottom of the nozzle head cylinder 2. The substrate 6 can be any elongated and pleasing substrate adapted to be guided along a circular path. In this specification, a substrate is an image powder, like a particle or a separator or article that is itself or mounted on a long strip of flexible substrate carrier. The precursor used may include any precursor suitable for atomic layer deposition such as ozone, dimethyl sulphate (seven 1^[1167|1丫1311111^11:[11111,>|^8), water, Titanium tetrachloride (TiCl4), diethylzinc (DEZ), or a precursor may also be a plasma, such as ammonia (NH3), argon (Ar), oxygen (〇2), nitrogen (N2), Hydrogen (HO or carbon dioxide (c〇2) plasma. The purge gas used in the nozzle head cylinder 2 may include an inert gas such as: t gas, dry air or other gas suitable for scavenging gas in atomic layer deposition. The plasma can also be used for cleaning operations, such as nitrogen or argon destruction. In the present specification, the purge gas and the precursor may also be plasma. According to Figure 1, the apparatus of the present invention includes a transport mechanism and at least one The nozzle head cylinder 2' transmission mechanism includes a transfer cylinder 8' for the transport base & 6 nozzle head cylinder 2 includes a surface 2 for subjecting the surface 4 of the substrate 6 to at least a first precursor and a second precursor a plurality of precursor regions 14, 16 having a cylindrical surface on the outer surface of the transfer cylinder 8 as described above The transport surface 3' is transported by the transport surface 3 such that the substrate 6 is transported along the outer cylindrical surface of the transport cylinder 8. Accordingly, the surface of the nozzle head has an output surface 5' which is outputted from 5 to the substrate 6 The surface* is reacted by the continuous surface of at least one of the first precursor and the second precursor. As shown in Fig. i, the nozzle head cylinder 2 is arranged along the transmission cylinder 8 so that the transmission surface of the 201219596 transmission mechanism is transmitted. 3 and _ spray pair, so that by transferring the substrate 6 along the output surface of the cylinder 2., the transfer surface 3 and the nozzle head cylinder 2 can be processed for the transfer surface 3 of the surface wheel mechanism of the substrate 6. The transmission cylinder 8 and the nozzle head cylinder have a gap between the faces 5, and the base 6 of the transmission wheel of the transmission cylinder is moved along the transmission path formed by the gap to move the line gap. 3 and the wheel-out surface 5 of the nozzle head cylinder 2 is transported on the substrate surface 6 of the transmission mechanism along the transmission mechanism: the transmission wheel 1^ surface 4 and the nozzle head cylinder 2, and the surface of the substrate 6 is directed toward the reaction. Space. 4 = set transmission mechanism preferably includes settings The transmission surface 3: the first transmission element 'is moved by the wheel element guiding base 3 surface 3 and moves to accelerate the movement of the substrate 6. In the middle, the transmission element is formed as a transmission roller 丨Embodiments = nozzle head cylinder 2 and transmission cylinder 8 2: = 2 real two: the input roller Π) can be a freely rotating roller or a passive roller. The transmission can also be a conveyor belt or a sliding surface. Cow As shown in Fig. 1, the radix white and the second substrate of the present invention. Substrate...Part:Base::Bottom::: The transmission path between the nozzle head cylinder 2 and the transfer cylinder 8 = the rational 'and the base wide' can be located in the nozzle head cylinder 2 and the transmission cylinder 8 =: the turn It is supplied to the second substrate roller 22. The substrate 6 can also be supplied from the second substrate roller 22 to the first substrate roller 2〇. Further, the soil substrate 6 can be driven two or more times to pass through the column 8. The transmission path of Yulubu's other columns and the transfer wheel 1 is only used. In addition, the 'precision driven first base roller 201219596 second base roller 22' utilizes the first base roller. The wheel 2 () and the second basic roller The force provided by 22 causes the substrate 6 to move through the transport path between the nozzle head cylinder 2 and the transfer cylinder 8. It should be noted that the nozzle head cylinder 2 and the transfer cylinder 8 can be part of the apparatus of the present invention or the nozzle head cylinder 2 and transmission - the use of the transfer cylinder 8 can be a separable component that can be attached to the device of the present invention. The base roller 20, the second substrate roller 22 can also be used to store, supply and receive other types of containers for the substrate. Replacement. The transmission mechanism of the device of the present invention further includes Number guiding element 4^ The plurality of guiding elements guide the substrate 6 to the transmission circle 8 or the transmission surface = the transmission path between the nozzle heads 2, and the plurality of guiding elements are used for the transmission cylinder 8 and the nozzle head 2 The transmission path or transmission "3 of the base 6 is guided. In the embodiment of the figure, the plurality of guides _ _ includes - or a plurality of guide rollers 24, 26, 28, 3 〇, guide the substrate 6 to the base 6 by means of guide rollers: 24, 26, 28, 3G The transfer surface 3 or the self-transmission surface 3 guides the substrate 6. In the figure, the guide roller 24, the core for guiding the substrate 6 to the opening of the transfer cylinder 8 and one of the first transport rollers 28 located in the transport surface 3 of the conveyor phase. The opening & passes through the wall of the relay wheel cylinder 8 and along the central axis of the transmission cylinder 8 "extends / by means of the last transmission roller 30 and the second substrate roller 22 provided, the substrate can be transported by the transport surface 3 Directly guided to the flute's base-base roll 2. However, it should be noted that the guiding element, the guide roller 24, the μ, the μ 3〇, the first base roller 20 and the second base roller 22 may also be JM + the same side 3 is set, and the invention is not limited to the arrangement of the guiding element, the guiding roller dry 24 28, 30, the first substrate roller 20 and the second substrate roller 22 201219596 - therefore - the transmission mechanism may comprise One or more, guide rollers, guide the guiding elements, thereby guiding the substrate 6 to the conveyor: and. For the substrate 6 from the transport surface 3 of the transport mechanism: line guide; ?: Figure 1 It can be seen that the transmission path between the nozzle head cylinder 2 and the transmission cylinder 8 is close to 360 degrees, and only the entire circle is taken out of the door. However, the nozzle head cylinder 2/transmission circle:: inter-structure transmission The path can also be used for 18 degrees for the base = wheel: :::= and better at least 33. Degree along the conveyor ===::::. Needs: It means that the 1st (fourth) rounds the n-column 32. Therefore, the transmission opening can also be 90 degrees or even 18 degrees. In this specification , the transmission cylinder - the word includes all these choices. Therefore, the transmission circle ... can only be a - cylindrical - part, for example: "cylindrical or - cylindrical cylindrical wall one degree of twist or 180 degrees. Therefore 'transmission cylinder can include only It is a transmission surface of a part of the cylindrical wall. It should also be noted that the opening of the transmission cylinder does not have to be formed as in the cutting manner in ..., and the opening can also be formed in one of the cylindrical outer casings of the transmission cylinder. The substrate 6 is transferred by the opening of the transfer cylinder 8 to the transfer surface 3 substantially perpendicular to the central axis of the nozzle head cylinder 2. Fig. 1 also shows a detailed sectional view of the nozzle head cylinder 2. On the inner surface of the nozzle head cylinder 2 The wheel exit 5 continuously includes the following sequence: optionally repeating a plurality of purge gas zones $13, - precursor zones 14, 16 and a discharge zone U. purge gas zone 13, precursor zones 14, 16 and emissions Zone 11 is a circle along the nozzle head cylinder 2 The circumferential direction is continuously staggered by 11 201219596. As shown in the figure, the output face 5 of the nozzle head cylinder 2 continuously includes a sequence in the following order: optionally repeating one of the first precursor regions 14 and a discharge region 11. A purge gas region 13, a second precursor region 16, a discharge region 11, and a purge gas region 13. The precursor is supplied via the first precursor region 14 and the second precursor region 16 such that the surface of the substrate is exposed The surface reaction of the precursor. The purge gas system is supplied to the purge gas region 13 11 by suction or vacuum. As shown in Fig. 1, the first precursor region 14 and the second precursor region 16 may be formed as Channels or slits or the like which extend substantially in the direction of the central axis of the nozzle head cylinder 2. In an alternative embodiment, the plurality of channels 14, 16 , 11 , 13 extend substantially at an angle relative to the central axis of the nozzle head cylinder 2 between the channels 14 , 16 , 11 , 13 and the central axis The angle can range from 丨 to 1 degree. The first precursor region 14 and the second precursor region 16 may also be provided by a precursor nozzle for supplying a precursor by a precursor nozzle. With the configuration of Fig. 1, a uniform airflow can be provided along the first precursor region 14/second precursor region 16 and the purge gas region 13 and can be discharged along the discharge zone. Thus, the first precursor region: 14 and the second precursor region 16 can provide a precursor as a precursor nozzle I*'16 along the precursor region by the precursor nozzles 14, 16. The purge gas zone 13 can also be provided as a purge gas nozzle, the purge gas supply is supplied along the entire length of the purge gas zone by the purge gas nozzle, and the discharge zone 11 is used to burn precursors along the discharge zone. Remove gas emissions. 12 201219596 - In the alternative embodiment, the output face provided continuously along the periphery of the nozzle head cylinder 2 includes the following sequence: optionally repeating one of the plurality of first precursor regions 14 a clearing region 13, a second precursor region 16, and a purge gas region 13. In this embodiment, the first precursor region 14 has at least one first inlet port for supplying the first precursor and at least one first outlet port for discharging the first precursor, and the second precursor region 16 has At least one second port for supplying the second precursor and at least a second port 埠 for discharging the second precursor and the purge region 13 has at least a third population 用于 for supplying purge gas. The purge gas zone 13 may also include or have a plurality of third outlet ports or alternatively discharge purge gas through the outlet port of the precursor zone. For example, the inlet bee can be located at the end of a lengthwise precursor channel and a purge gas channel, and the outlet iteration can be located at the end of the precursor channel or the purge gas channel such that the precursor and > The channel flows. In the meantime, the population can be located in the middle of a channel, and the opposite ends of the p-channel can be located. 'Column 2 fUZ 7F' When the substrate 6 is transported along the transport path between the transport cylinder 8 and the nozzle head circle 2, the surface 4 of the substrate 6 facing the output face 5 of the nozzle head cylinder 2 is subjected to the precursor, and the main body The 曰 & 4 has just been continuously interlaced by the drive area. Need to be "疋, the output surface 5 of the head cylinder 2 can be covered by the object area, but the output of the nozzle head cylinder 2 - the drive area" is transmitted through the number of individual drive paths When the transmission between the transmission cylinders 8 is transmitted, the number of planes 4 can be increased. The formation of the long layer on the substrate 6 can be increased by rotating around the axis of the nozzle head cylinder 2 13 201219596 • The apparatus of the present invention, the coating transfer mechanism (not shown), the apparatus of the present invention may include a one-back head cylinder 2, & f for rotating the nozzle head cylinder 2 The spray is along the transport mechanism 8: the transfer mechanism is in the direction of transport of the substrate 6, the mechanism is rotated relative to the base: 3 faces 3, the nozzle head cylinder 2 is rotated, or the direction of the transfer is ο ^ " Direction, along the surface of the transmission wheel of the transmission mechanism ^^^^, rotate the nozzle head cylinder 2. When the nozzle head cylinder 2 is privately pulled toward the transmission direction of the base 6, the transmission surface 3 of the transmission mechanism 8 is rotated. When the nozzle head cylinder 2 is rotated, the transmission speed of the substrate 6 is rotated. Passing to the original, _ 9 , , / θ ^ . During the movement after the transmission, the nozzle head cylinder is rotated to make the base: 6 the surface of 4: more than the precursor area ... to play the role. ▲ bottom 6 transmission pass In the case of the wheel #, a plurality of growth layers are formed on the surface of the substrate. The m, the drive and the purge gas can be supplied to the nozzle head via the fluid connection, and the nozzle head 2 has one or more The precursor and/or the clearing color <§*angg, ,, bottle or the like, such that the precursor and/or > month removal gas can move with the nozzle head 2, whereby the configuration can reduce the connection to the movement The number of highly technical fluid couplings required for the nozzle head 2. Because of the technical advantages of the present invention, the concept of the present invention can be implemented in a variety of ways, as will be apparent to those skilled in the art, although the preferred embodiment discloses the above. 1 is not intended to limit the invention and its embodiments, and may be modified and retouched without departing from the spirit and scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The following is a detailed description of the present invention as follows: 14 201219596 FIG. 1 is a schematic diagram showing an embodiment of an apparatus according to the present invention. Component symbol description] 2~ nozzle head cylinder; 4~ surface; 6 ~ substrate; 1 0~ transfer roller; 13~ clear gas area; 16~ second precursor area; 22~ second base roller; 32~ opening 0 3 ~Transport surface; 5~output surface; 8~transport mechanism; 11~discharge area, 14~first precursor area; 20~first base roller; 24,26,28,30~guide roller;

Claims (1)

201219596 七、申睛專利範圍: ------ ^1.—種裝置,藉由使—撓性基底⑻之—表面⑷受至 第則•驅物及—帛二前驅物之連續表:面反應而對於該 基底(6)之該表面(4)進行處理,該裝置包括: " 至)一喷嘴頭(2)’包括用於使該基底(6)之該表面(4) 受至少該第一前驅物及該第二前驅物作用之二或多個前驅 物區域(14,16);以及 一傳輸機構(20, 22, 24, 26, 28, 3G,8,⑻,用於 傳輸該基底(6); ' 該噴嘴頭形成為一噴嘴頭圓柱⑵,該喷嘴頭圓柱⑵ 之一内圓柱表面上具有—輸出面⑸,使—撓性基底⑷之 一表面(4)受至少一第一前驅物及一第二前驅物之連續表 面反應;以及 該傳輸機構(20, 22, 24, 26, 28, 30, 8, 10)包括一 傳輸表面(3),該傳輸機構(2〇, 22, 24, 26, 3〇, & % 之該傳輸表面(3)—致於該喷嘴頭圓柱(2)之至少部分該輸 出面(5),該傳輸機構(2〇,22,24,26,28,30,8,1〇) 用於對該喷嘴頭圓柱(2)之該輸出面(5)及該傳輸機構(2〇, 22,24,26’ 28’ 30,8,10)之該傳輸表面(3)間之該基底 (6)進行傳輸; - 其特徵在於: 該傳輸機構(20,22,24,26,28,30,8,1〇)設置用 於將該基底(6)導引至該傳輸表面(3)及對於來自該傳輸表 面(3)之該基底(6)進行導引。 16 201219596 2.如申請專利範圍第1項所述之裝置,其中,該俸輸 機構(20, 22, 24, 26, 28, 30, 8, 1 0)包括用於在該傳輸 圓柱(8)及該噴嘴頭圓柱(2)間傳輸及處理該基底(6)之— 至少部分圓柱形傳輸圓柱(8),該傳輸圓柱(8)之外圓柱表 面上具有該傳輸表面(3)且設置於該喷嘴頭圓柱(2)内側。 3.如申s青專利範圍第1或2項所述之裝置,其中,該 傳輸機構(20, 22 24 ?r 9q 〇η 〇 1 ηΝ . . μ,zb,dU’ 8’ 1〇)用於傳輸該基 底(6)至該傳輸表面(3) ’該傳輸表面(3)實質垂直於該喷嘴 頭圓柱(2)之該中心軸。 4.如申請專利範圍第2或3項所述之裝置,其中,該 傳輸圓柱⑻包括用於傳輸該基底⑷至該傳輸表面⑻之 開口(32),該傳輸表面(3)實質垂直於該噴嘴頭圓柱(2) 之該中心轴。 5. 如申請專利範圍帛4項所述之裝置,其中,該傳輸 圓柱(8)係為具有該開口(32)之一中空圓柱,該開口(32) 位於該傳輸圓柱⑻之該圓柱外罩中,用於傳輸該基底(6) ο傳輸表面(3),該傳輸表面(3)實質垂直於該噴嘴頭圓 柱(2)之該中心軸。 、 、 6. 如申請專利範圍第1至5項中任一項所述之裝置, 其中’該傳輸表面⑻具有—或多個傳輸元件⑴),該傳輸 疋件(10)係沿著該傳輸表面(3)導引該基底(6) ^ 7. 如申請專利範圍帛5項所述之裝置,其中,該傳輸 凡件包括複數傳輸滾輪(1〇)、一輸送帶或一滑動表面。 ,如申凊專利範圍第1至7項中任一項所述之裝置, 17 201219596 其中’該傳輸機構包括一或多個導引元件(24,26,28, 30),該導引元件(24,26,28,30)用於將該基底(6)導引 至該傳輸表面(3)。 9. 如申凊專利範圍第8項所述之裝置,其中,該導引 疋件包括一或多個導引滾輪(10)或桿件,該導引滾輪(1〇) 或桿件用於將該基底(6)導引至該傳輸表面(3)且對於來自 該傳輸表面(3)之該基底(6)進行導引。 10. 如申請專利範圍第1至9項中任一項所述之裝置, 其中,該傳輸機構包括一第一基底滾輪(2〇)及一第二基底 滾輪(22),該基底(6)係於該第一基底滾輪(2〇)及該第二基 底滾輪(22)間進行傳輸,如此於該第一基底滾輪(2〇)及該 第二基底滾輪(22)間對於該基底(6)進行處理。 11 ·如申請專利範圍第i至丨〇項中任一項所述之裝 置,其中,該喷嘴頭圓柱(2)具有一或多個第一前驅物區域 (14)及或夕個第一則驅物區域(16),該一或多個第一前 驅物區域(14)及該-或多個第二前驅物區域(16)係沿著該 噴嘴頭圓柱(2)之圓周方向連續交錯設置。 12. 如申請專利範圍第u項所述之裝置,其中,該喷 嘴頭(2)包括-輸出面⑸,該輸出面(5)連續包括以下Λ順 序.可選擇地重覆複數次之一清除氣體區域⑽、—前驅 物區域(14,16)及一排放區域(11)。 13. 如申請專利範圍第u或12項所述之裝置,其令, 該噴嘴頭圓柱(2)包括一輸出面⑸’該輸出面(5)連續包括 以下順序:可選擇地重覆複數次之一第一前驅物區域 18 201219596 (14 )、一排放-區域(11 )、一清除氣體區域(1 3 )、一第二前 驅物區域(16)、一排放區域(11)及一清除氣體區域(13)。 14. 如申請專利範圍第11項所述之裝置,其中,該輸 出面(5)連續包括以下順序:可選擇地重覆複數次之一第一 前驅物區域(14)、一清除氣體區域(13)、一第二前驅物區 域(16)及一清除區域(13)。 15. 如申請專利範圍第14項所述之裝置,其中,該第 一前驅物區域(14)具有用於供應該第一前驅物之至少一入 口埠及用於排放該第一前驅物之至少一出口槔該第二前 驅物區域(16)具有用於供應該第二前驅物之至少一入口淳 及用於排放該第一前驅物之至少一出口槔,並且該清除區 域(13)具有用於供應清除氣體之至少一入口槔。 16_如申請專利範圍第u至15項中任一項所述之裝 置,其中,該等前驅物區域(14, 16)係由複數通道所形成, 該等通道實質沿著該喷嘴頭圓柱(2)之該中心軸方向而延 伸,或該等通道實質沿著相對於該噴嘴頭圓柱(2)之該中心 軸方向之一角度而延伸。 17. 如申請專利範圍第丨至16項中任一項所述之裝 置,其中,該裝置包括一迴轉機構,該迴轉機構用於轉動 該喷嘴頭圓柱⑺或該傳輸圓柱⑻繞著該喷嘴頭圓柱⑵ 之該中心軸。 18. 如申請專利範圍第17項所述之裝置,其中,該迴 轉機構係朝該基底(6)之值於古& + 叫之得輸方向、沿著該傳輸機構(2〇, 22,24,26,28,30 r inw 与乂 ,,)之該傳輸表面(3)轉動該喷嘴 19 201219596 _頭圓权⑺戢該傳輸餘⑻,或該_____ 基底⑷之傳輸方向之相反方向、沿著該傳輪機構⑶ ' 该 柱(2)或該傳輸圓柱(8) 18項中任一項所述之裝 24,⑶,28,30,8,10) 度對於該基底(6)進行傳 19.如申請專利範圍第1至 置,其中,該傳輸機構(2〇,22, 係沿著該傳輸表面(3 )以至少2 7 〇 輸。 19項所述之裝置,其中,該傳 28,30,8,10)係沿著該傳輸表 2 0.如申請專利範圍第 輸機構(20,22,2心26 面(3)以至少330度對於該基底(6)進行傳輸。 .如申靖專利範圍第j至2〇項中任一項所述之裝 置其中’該噴嘴頭圓柱(2)包括複數氣體連接件,該等氣 體連接件係以軸向或同轴於該喷嘴頭圓柱(2)之該中心軸 設置而對於處理氣體進行供應及/或排放。 20201219596 VII. Applicable scope of patent: ------ ^1. - A device, by making the surface of the flexible substrate (8) - (4) to the continuous table of the first and last precursors: The surface (4) of the substrate (6) is treated in a surface reaction, the apparatus comprising: "to a nozzle tip (2)' including the surface (4) of the substrate (6) being subjected to at least Two or more precursor regions (14, 16) to which the first precursor and the second precursor act; and a transport mechanism (20, 22, 24, 26, 28, 3G, 8, (8) for transmission The base (6); 'the nozzle head is formed as a nozzle head cylinder (2) having an output surface (5) on a cylindrical surface of the nozzle head cylinder (2) such that at least one surface (4) of the flexible substrate (4) is subjected to at least one a continuous surface reaction of the first precursor and a second precursor; and the transport mechanism (20, 22, 24, 26, 28, 30, 8, 10) includes a transport surface (3), the transport mechanism (2〇 , the transfer surface (3) of 22, 24, 26, 3〇, & % - at least part of the output face (5) of the nozzle head cylinder (2), the transport mechanism (2) 〇,22,24,26,28,30,8,1〇) for the output face (5) of the nozzle head cylinder (2) and the transmission mechanism (2〇, 22, 24, 26' 28' 30, 8, 10) of the substrate (6) between the transmission surfaces (3) for transmission; - characterized by: the transmission mechanism (20, 22, 24, 26, 28, 30, 8, 1) setting For guiding the substrate (6) to the transport surface (3) and for guiding the substrate (6) from the transport surface (3). 16 201219596 2. As described in claim 1 Apparatus, wherein the transport mechanism (20, 22, 24, 26, 28, 30, 8, 1 0) includes means for transporting and processing the substrate between the transfer cylinder (8) and the nozzle head cylinder (2) (6) - at least partially a cylindrical transfer cylinder (8) having a transfer surface (3) on a cylindrical surface outside the transfer cylinder (8) and disposed inside the nozzle head cylinder (2). The device of claim 1 or 2, wherein the transport mechanism (20, 22 24 ? r 9q 〇η 〇1 η Ν . . μ, zb, dU' 8' 1 〇) is used to transport the substrate ( 6) to the transfer surface (3 The transmission surface (3) is substantially perpendicular to the central axis of the nozzle head cylinder (2). 4. The device of claim 2, wherein the transmission cylinder (8) comprises An opening (32) from the substrate (4) to the transfer surface (8), the transfer surface (3) being substantially perpendicular to the central axis of the nozzle head cylinder (2). 5. The device of claim 4, wherein the transfer cylinder (8) is a hollow cylinder having one of the openings (32), the opening (32) being located in the cylindrical outer casing of the transfer cylinder (8) For transporting the substrate (6) a transport surface (3), the transport surface (3) being substantially perpendicular to the central axis of the nozzle head cylinder (2). 6. The device of any one of claims 1 to 5, wherein the transmission surface (8) has - or a plurality of transmission elements (1), the transmission element (10) is along the transmission The surface (3) guides the substrate (6). 7. The device of claim 5, wherein the transporting member comprises a plurality of transport rollers (1 turns), a conveyor belt or a sliding surface. The device of any one of claims 1 to 7 wherein: 17 201219596 wherein the transmission mechanism comprises one or more guiding elements (24, 26, 28, 30), the guiding element ( 24, 26, 28, 30) for guiding the substrate (6) to the transport surface (3). 9. The device of claim 8, wherein the guiding member comprises one or more guiding rollers (10) or rods, the guiding rollers (1〇) or rods being used for The substrate (6) is guided to the transport surface (3) and guided to the substrate (6) from the transport surface (3). 10. The device of any one of claims 1 to 9, wherein the transport mechanism comprises a first substrate roller (2) and a second substrate roller (22), the substrate (6) Transfer between the first substrate roller (2〇) and the second substrate roller (22), such as between the first substrate roller (2〇) and the second substrate roller (22) for the substrate (6) ) for processing. The apparatus of any one of claims 1 to 3, wherein the nozzle head cylinder (2) has one or more first precursor regions (14) and or a first one a drive region (16), the one or more first precursor regions (14) and the one or more second precursor regions (16) are continuously staggered along a circumferential direction of the nozzle head cylinder (2) . 12. The device of claim 5, wherein the nozzle head (2) comprises an output face (5), the output face (5) continuously comprising the following sequence. Alternatively, repeating one of the plurality of times A gas zone (10), a precursor zone (14, 16) and a discharge zone (11). 13. The device of claim u or 12, wherein the nozzle head cylinder (2) comprises an output face (5) 'the output face (5) continuously comprising the following sequence: optionally repeating a plurality of times One of the first precursor regions 18 201219596 (14 ), a discharge-zone (11), a purge gas region (13), a second precursor region (16), a discharge region (11), and a purge gas Area (13). 14. The device of claim 11, wherein the output face (5) continuously comprises the following sequence: optionally repeating a plurality of first precursor regions (14), a purge gas region ( 13), a second precursor region (16) and a clear region (13). 15. The device of claim 14, wherein the first precursor region (14) has at least one inlet port for supplying the first precursor and at least one for discharging the first precursor An outlet 槔 the second precursor region (16) has at least one inlet port for supplying the second precursor and at least one outlet port for discharging the first precursor, and the cleaning region (13) has At least one inlet port for supplying purge gas. The apparatus of any one of clauses 1-5, wherein the precursor regions (14, 16) are formed by a plurality of channels substantially along the nozzle head cylinder ( 2) extending in the direction of the central axis, or the channels extending substantially at an angle relative to the central axis of the nozzle head cylinder (2). 17. The device of any of claims 1-6, wherein the device comprises a slewing mechanism for rotating the nozzle head cylinder (7) or the transmission cylinder (8) around the nozzle head The central axis of the cylinder (2). 18. The device of claim 17, wherein the slewing mechanism is oriented toward the base (6) in the direction of the ancient & +, along the transport mechanism (2, 22, 24,26,28,30 r inw and 乂,,) the transmission surface (3) rotates the nozzle 19 201219596 _ head circle weight (7) 戢 the transmission remainder (8), or the direction opposite to the transmission direction of the _____ base (4), The base (6) is carried out along the carriage mechanism (3) 'the column (2) or the transmission cylinder (8) 18 according to any one of 24, (3), 28, 30, 8, 10) degrees. 19. The method of claim 1, wherein the transport mechanism (2, 22, is transported along the transport surface (3) by at least 2 7 。. The device of claim 19, wherein the transmission 28, 30, 8, 10) is transmitted along the transfer table 20 as in the patent application range (20, 22, 2 core 26 (3) for at least 330 degrees for the substrate (6). A device according to any one of the items of the present invention, wherein the nozzle head cylinder (2) comprises a plurality of gas connecting members, and the gas connecting members are The process gas is supplied and/or discharged axially or coaxially to the central axis of the nozzle head cylinder (2).
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