201210702 substrate (6) to at least first arid second precursors. According to the invention the two or more precursor nozzles (14, 16) are arranged to a travel along a first endless track between at least two turning points (26, 28). 四、指定代表圖： (一） 本案指定代表圖為：第（1)圖。 (二） 本代表圖之元件符號簡單說明： 2〜箭頭； 4〜箭頭； 11〜排放通道； 14〜第一前驅物噴嘴 〜第一基底滾輪； 2 6〜第一轉軸； 3〜循環式輸送帶； 基底； 13〜清除氣體通道； 16〜第二前驅物喷嘴； 23〜第二基底滾輪； 2 8〜第二轉軸。 五本案若有化學式時，請揭示最能顯示發明特徵的化學式 六、發明說明： 表面受 而對基 項之前 【發明所屬之技術領域 本發明係201210702 substrate (6) to at least first arid second precursors. According to the invention the two or more massive nozzles (14, 16) are arranged to a travel along a first endless track between at least two turning points (26, 28). 4. Designated representative map: (1) The representative representative of the case is: (1). (b) A brief description of the symbol of the representative figure: 2~ arrow; 4~ arrow; 11~ discharge channel; 14~ first precursor nozzle~ first base roller; 2 6~ first shaft; 3~ circulating conveyor Belt; base; 13~ purge gas passage; 16~ second precursor nozzle; 23~ second base roller; 2 8~ second shaft. If there are chemical formulas in the five cases, please disclose the chemical formula that best shows the characteristics of the invention. VI. Description of the invention: Surface acceptance before the base [Technical Field of the Invention]
底之表面進行 行處理， 關於—種裝置，使一撓性基底之— 二前驅物之連續表面反應 理特別是根據申請專利範圍第1 201210702 言之一裝置。 【先前技術】 於習知技術之數種裝置類型中，根 |稞原子層沈積 (atomic layer deposition method, ALD)之原理是利用這 些裝置及噴嘴頭使一基底之一表面受至少— 第一則驅物及 -第二前驅物之冑續表面反應而冑基底之表面進行處理。 在ALD應用中，一般是經由分開階段將兩氣體前驅物引入 ALD反應器中。氣體前驅物有效地與基底之表面進行反應 下形成一單一原子層之沈積。一般而言，前驅物階段是緊 接於一清除階段之後或與清除階段分開的方式進行，在引 入其它不同前驅物之前是需藉由前驅物階段去除基底表面 上之過量前驅物。因此，一 ALD製程需要依序交替方式將 複數前驅物流動至基底表面。此重覆的交替表面反應順序 及介於其間之清除階段即為一般ALD沈積循環。 S知技術中之ALD裝置通常包括一喷嘴頭，此喷嘴頭 具有使基底之表面受第一前驅物之作用之一或多個第一前 驅物區域、具有使基底之表面受第二前驅物之作用之一或 多個第二前驅物區域，以及具有使基底之表面受一清除氣 體之作用之一或多個清除氣體區域或具有使基底之表面受 一清除氣體之作用且設置於第一前驅物區域及第二前驅物 區域之間之一或多個清除氣體區域。於喷嘴頭中之複數區 域是以交錯連續方式設置：第一前驅物區域、清除氣體區 域、第二前驅物區域、清除氣體區域、第一前驅物區域、 201210702 /青除氣體區域、第二前驅物區域等等。因此，當喷嘴頭於 基底之表面上移動時，依照ALD方法可於基底之表面上製 作生長層。喷嘴頭亦可包括排放通道，這些排放通道可設 置於第一前驅物區域及第二前驅物區域之間或於一第一前 驅物區域及一清除氣體區域之間或於一第二前驅物區域及 一清除氣體區域之間。在基底之表面受前驅物作用之後， 利用排放通道對於前驅物及清除氣體進行排放。可替代 地’於各習知技術中之前驅物區域及清除氣體區域包括用 於供應前驅物或清除氣體之至少一入口埠及用於排放前驅 物或清除氣體之至少一出口埠。因此，在基底之表面受前 驅物之作用後，利用各前驅物區域及各清除氣體區域所提 供之吸取作用對於前驅物或清除氣體進行排放。 由於一次ALD循環期間僅能於基底之表面上製作單一 原子層，在藉由具有複數第一區域及第二區域之喷嘴頭的 作用下，於噴嘴頭對基底之表面進行單次掃描下便可在基 底之表面上形成複數原子層，並且喷嘴頭之單次掃描是可 經由喷嘴頭或基底之移動而達成。於習知技術中，對於噴 嘴頭進行快速前後移動下是可增加噴嘴頭之掃描次數，藉 此乂達到對於基底表面之多次掃描。然而，此用於製作複 數原子層之習知技術的缺點在於其移動機構之前後移動過 程中產生大的機械力且喷嘴頭必須抵抗此機械力，當移動 機構對已停止於結束位置之喷嘴頭再次加速移動時所產生 機械力更S特別的大’因此容易造成裝置及嗔嘴頭之損壞。 4 201210702 【發明内容】 ^發明之目的在於提供—種裝置，藉此以解決 知技術的問題。佑昭由& g ^ k 八以申“利棘圍第1項之裝置的特徵部 刀達成本發明之目的，其特徵在於：二或多個前驅物啥 嘴沿荖s小-姑 /似月丨j 物噴 一轉點之間之-第-循環式軌道具有-行程。 附屬項中對於本發明之較佳實施例進行說明。 本發月之構想在於提供具有二或多個前驅物噴嘴一 裝置，藉此使—基、 一a 基底之表面跫至少一第一前驅物及一第 :作用。本發明之裝置更包括-移動機構，藉由 =構：得複數前驅物喷嘴於至少二轉點之間沿著-循 玉衣式輸送帶進杆銘無 4南 移動據此，複數前驅物噴嘴係連接於一 = ::::或彼此相互連接’如此形成輸送帶沿著循 喷嘴二：動。在移動機構的作用下使得複數前驅物 喷鳴及循％式輸送帶連續地繞著至少複數轉點進行移動。 ::發明之一較佳實施例中’複數前驅物喷嘴為長條形前 驅物通道。複數長條形前驅物通道係於—方向上沿著至少 一轉點之間之第_ ;{法τ® 4? ^ 衣式執道具有行程’方向實質垂直於 複數長條形前驅物通道之—縱向。舉例而t，本發明之裝 置可定位於一基底之上方，當複數前驅物喷嘴或前驅物通 ㈣式轨道移動時，循環式執道之迴轉使得基底之 表面父錯地受至少筮 ^„ , 弟一别驅物及第二前驅物之表面反應。 本發月之優點在於其所提供之裝置是可同時地運用迴 轉運動且可使基底之表面均句地受複數前驅物之作用。相 較於前驅物喷嘴之前後運動，藉由將前驅物嗜嘴沿著至少 201210702 轉點之pa1之循環式軌道進行㈣運動是可減少作用在喷 % :之應力及力量。當複數前驅物喷嘴或前驅物通道沿著 V:式軌道移動時’由於複數前驅物喷嘴或前驅物通道實 疋向維持’基底可均句地受前驅物材質之作用。 【實施方式】 第1圖表示本發明之裝署 ^ ^ , 裝置之一貫鈀例之示意圖。本發 明之裝置包括一第—轉 ^ n 久弟一轉釉28。一循環式 輸送帶3係設置圍繞於 弟轉軸26與第二轉軸28之間。 *之裝置更包括一移動機構（未圖示 使得循環式輸送帶3繞著第一轉利用移動機構 ，兄有弟轉軸26及第二棘鈾？8推 沿著第1圖之箭頭4之方向的轉動。需注c 之裝置亦可包括一… ㈣“-的是’本發明 ㈣㈣轉點。循環式輸送帶3 八 或夕個第—前驅物喷嘴14及一弋夕_/松 嗆喈ΐβ结 4及或夕個第二前驅物 喷嘴16,第-前驅物嘴嘴Η用於供應第-前驅物，第 前驅物喷嘴16用於佴廍笛一 引驅物，第二 一表面為至，笛、…第-則驅物’如此使得-基底6之 第—前驅物及第二前驅物之連續表面及庙 因為第—前驅物嘴嘴丨 么 、” ，心。 式輸送帶3，第一 ^ 則驅物噴嘴16設置在循環 隨著循产作 道14及第二前驅物噴嘴16伟 _%式輸送帶3於至少第—轉軸2 6係 間、沿著一第_ M s ，、第一轉軸28之 14、第一 L 式軌道移動—行程。第—前驅物喷嘴The surface of the bottom is treated, and the continuous surface reaction of the second precursor of a flexible substrate is particularly a device according to the patent application No. 1 201210702. [Prior Art] Among several device types of the prior art, the principle of the atomic layer deposition method (ALD) is to use one of the devices and the nozzle tip to at least one surface of a substrate - the first The surface of the substrate is treated by a subsequent surface reaction of the precursor and the second precursor. In ALD applications, two gas precursors are typically introduced into the ALD reactor via separate stages. The gas precursor is effectively reacted with the surface of the substrate to form a single atomic layer of deposition. In general, the precursor phase is carried out immediately after or in a separate phase from the purge phase, and excess precursors on the surface of the substrate are removed by the precursor phase prior to introduction of the other precursors. Therefore, an ALD process requires sequential transfer of multiple precursors to the surface of the substrate. This repeated alternating surface reaction sequence and the intermediate phase between them are the general ALD deposition cycles. The ALD device of the prior art generally includes a nozzle head having one or more first precursor regions that cause the surface of the substrate to be subjected to the action of the first precursor, having the surface of the substrate subjected to the second precursor. Acting as one or more second precursor regions, and having one or more scavenging gas regions for causing the surface of the substrate to be subjected to a scavenging gas or having the surface of the substrate subjected to a scavenging gas and disposed in the first precursor One or more purge gas regions between the object region and the second precursor region. The plurality of regions in the nozzle head are disposed in a staggered continuous manner: a first precursor region, a purge gas region, a second precursor region, a purge gas region, a first precursor region, a 201210702 / a green gas removal region, and a second precursor Object area and so on. Therefore, when the nozzle head moves over the surface of the substrate, a growth layer can be formed on the surface of the substrate in accordance with the ALD method. The nozzle head may also include a discharge passage disposed between the first precursor region and the second precursor region or between a first precursor region and a purge gas region or a second precursor region And a gas removal zone. After the surface of the substrate is subjected to the action of the precursor, the discharge channel is used to discharge the precursor and the purge gas. Alternatively, in the prior art, the precursor region and the purge gas region include at least one inlet port for supplying a precursor or a purge gas and at least one outlet port for discharging a precursor or a purge gas. Therefore, after the surface of the substrate is subjected to the action of the precursor, the precursor or purge gas is discharged by the suction provided by each of the precursor regions and the purge gas regions. Since only a single atomic layer can be formed on the surface of the substrate during one ALD cycle, a single scan of the surface of the substrate can be performed by the nozzle head by the nozzle head having the plurality of first regions and the second region. A plurality of atomic layers are formed on the surface of the substrate, and a single scan of the nozzle tip is achieved by movement of the nozzle tip or substrate. In the prior art, the rapid forward and backward movement of the nozzle head increases the number of scans of the nozzle tip, thereby achieving multiple scans of the surface of the substrate. However, this conventional technique for fabricating a plurality of atomic layers has the disadvantage that a large mechanical force is generated during the movement of the moving mechanism before and after the movement and the nozzle head must resist the mechanical force when the moving mechanism pairs the nozzle head that has stopped at the end position. The mechanical force generated when accelerating the movement again is more particularly large, so it is easy to cause damage to the device and the mouth of the mouth. 4 201210702 SUMMARY OF THE INVENTION The object of the invention is to provide a device for solving the problems of the prior art. You Zhao by & g ^ k 八 申 “ 利 利 利 利 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第The first-cycle type track has a stroke between the one-turn point. The preferred embodiment of the present invention is described in the accompanying item. The idea of the present month is to provide a nozzle having two or more precursors. a device whereby the surface of the substrate, the substrate of the a substrate is at least a first precursor and a first function. The device of the present invention further comprises a moving mechanism, wherein the plurality of precursor nozzles are at least two Between the turning points, along with the 循 式 输送 输送 铭 铭 铭 铭 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 Moving under the action of the moving mechanism, the plurality of precursors are squirted and the % conveyor belt is continuously moved around at least a plurality of turning points. :: In one preferred embodiment, the 'multiple precursor nozzles are strips Shaped precursor channel. Multiple elongated precursor channels are in the direction Between the at least one turning point, the first method has a stroke 'direction substantially perpendicular to the longitudinal length of the plurality of elongated precursor passages. For example, t, the device of the present invention can Positioned above a substrate, when the plurality of precursor nozzles or precursors move through the (four) type of orbit, the rotation of the cyclical approach causes the surface of the base to be wrongly touched by at least 筮^, the brother and the second precursor. The surface reaction of the object. The advantage of this month is that it provides a device that can simultaneously utilize the rotational motion and that the surface of the substrate can be uniformly subjected to a plurality of precursors. Compared with the front and rear movement of the precursor nozzle, the (4) motion can be reduced by the cyclical orbit of the pa1 of the precursor at least 201210702, which can reduce the stress and force acting on the spray. When the plurality of precursor nozzles or precursor passages are moved along the V:-type orbital, the substrate may be uniformly subjected to the precursor material due to the fact that the plurality of precursor nozzles or precursor channels are maintained toward the substrate. [Embodiment] Fig. 1 is a view showing a conventional palladium example of the apparatus of the present invention. The apparatus of the present invention includes a first-turning-n-year-old glaze 28. A circulating conveyor belt 3 is disposed between the second shaft 26 and the second shaft 28. * The device further includes a moving mechanism (not shown such that the endless conveyor belt 3 is moved around the first turn using the moving mechanism, the brother has a shaft 26 and the second rattle uranium? 8 is pushed along the arrow 4 of Fig. 1 The rotation of the device. The device to be injected with c may also include a ... (4) "- is the invention (4) (four) turning point. Circulating conveyor belt 3 八 or 夕一第- precursor nozzle 14 and a 弋 _ / 呛喈ΐ 呛喈ΐ β a junction 4 and a second precursor nozzle 16, a first precursor nozzle for supplying a first precursor, and a precursor nozzle 16 for a flute, the second surface being The flute, ... the first - then the drive - 'so that - the first surface of the base 6 - the precursor and the second precursor of the continuous surface and the temple because of the first - precursor mouth mouth,", heart. Conveyor belt 3, first ^ then the nozzle 16 is disposed in the cycle along with the production track 14 and the second precursor nozzle 16 _% conveyor belt 3 at least between the first axis and the second axis, along a _M s, 14 of a shaft 28, the first L-track movement - stroke. The first precursor nozzle
丄4乐—月丨J驅物噴嗜* ] β…上 貝W 16,這些長條形，μ、“成為長條形前驅物通道14、 及m、1』£物通道14、16實質沿著第-轉輛？r 及第一轉軸28之方A „ & 乐轉軸26. 方向延伸。因此，如第1圖所示，二或多 6 201210702 個長條形前驅物通道14、16係於第 ⑼之間具有於一第一循環式執道上，著轉輪以及第二轉軸 方向實質垂直於長條形前驅物通道“方向之-行程’ 本發明之裝置更包括一或多個之—縱向。 及一或多個長條形排放通道η，長停开〜體通道 及長條形排放通道η係實質平行:::除氣體通道13 14、夏貝十订於長條形前驅物通道 垂直之二仃於與長條形前驅物通道14、16之縱向實質 噴嘴1:二循％式軌道之一行程之方向。第-前驅物 :及第二前驅物喷嘴16、清除氣體通道13及排放通 道"亦可相對於第一轉軸26及一第二轉轴28之一角度而 延伸’此角度可為1至10度。 、太較佳地’第—前驅物噴嘴14及第二前.驅物噴嘴16、 清除氣體通道13及排放通道u採用以下順序進行設置·· 可選擇地重覆複數次之一清除氣體通道13、_前驅物通道 14、16及一排放通道丨卜 更佳地，第一前驅物噴嘴1 4、第二前驅物嗔嘴1 6、清 除氣體通道1 3及排放通道11採用以下順序進行設置：可 選擇地重覆複數次之一第一前驅物通道14、一排放通道 11、一清除氣體通道13、一第二前驅物通道16、一排放通 道11及一清除氣體通道13。 於另一可替代之實施例中，第一前驅物喷嘴14、第二 前驅物噴嘴16、清除氣體通道13及排放通道11採用以下 順序進行設置：可選擇地重覆複數次之一第一前驅物通道 14、一清除氣體通道13、一第二前驅物通道16及一清除 201210702 氣體通道13。在本實施例中，第一前驅物通道14具有用 於供應第一前驅物之至少一第一入口埠及用於排敌第一前 驅物之至少一第一出口埠，第二前驅物通道16具有用於供 應第二前驅物之至少一第二入口埠及用於排放 i ^ 刚*物 之至少一第二出口埠’並且清除氣體通道13具有用於供應 清除氣體之至少一第三入口埠。清除氣體通道13亦可包括 一或多個第三出口埠，或可替代地經由前驅物通道之出口 淳排放清除氣體。舉例而言，複數入口埠係可位在一縱長 前驅物通道及清除氣體通道之一端，並且複數出口埠係可 位在前驅物通道或清除氣體通道之另一端，如此使得清除 氣體、則驅物可沿著前驅物通道、清除氣體通道進行流動。 可替代地’入口埠可位於一通道之中間，並且出口埠可位 於一通道之相對端部。 循環式輸送帶3形成於至少二轉點26、28之間運行之 循％式執道。於第1圖中，第一前驅物噴嘴14、第 二前驅物噴嘴16、清除氣體通道13及排放通道U係製作 成為循環式輸送帶3之一部分或貼附於或連接於循丄4乐-月丨J 驱喷喷* ] β...上贝W 16, these long strips, μ, "become a long strip precursor channel 14, and m, 1" The direction of the first-turning vehicle?r and the first rotating shaft 28A „ & the rotating shaft 26. extends. Therefore, as shown in Fig. 1, two or more of the 201210702 long strip-shaped precursor passages 14, 16 are between the (9) and have a first circulation type, and the turning wheel and the second rotating shaft are substantially vertical. In the elongated strip precursor passage "direction-stroke", the apparatus of the present invention further comprises one or more - longitudinal direction and one or more elongated discharge passages η, long stop-to-body passages and long strip discharges The channel η is substantially parallel::: except for the gas channel 13 14 , the Xia Bei 10 is arranged in the vertical direction of the elongated precursor channel and the longitudinal substantial nozzle 1 of the elongated precursor channel 14 , 16 : The direction of one of the tracks. The first precursor: and the second precursor nozzle 16, the purge gas passage 13 and the discharge passage " may also extend relative to an angle of the first shaft 26 and a second shaft 28' The angle may be from 1 to 10 degrees. Preferably, the 'first-precursor nozzle 14 and the second front-drive nozzle 16, the purge gas passage 13 and the discharge passage u are arranged in the following order. One of several times to clear the gas passage 13, the precursor passages 14, 16 and one More preferably, the first precursor nozzle 14 , the second precursor nozzle 16 , the purge gas passage 13 and the discharge passage 11 are arranged in the following order: optionally repeating the plurality of times a precursor channel 14, a discharge channel 11, a purge gas channel 13, a second precursor channel 16, a discharge channel 11, and a purge gas channel 13. In another alternative embodiment, the first precursor The nozzle 14, the second precursor nozzle 16, the purge gas passage 13 and the discharge passage 11 are arranged in the following order: optionally repeating a plurality of first precursor passages 14, a purge gas passage 13, and a second precursor The object channel 16 and a clear 201210702 gas channel 13. In this embodiment, the first precursor channel 14 has at least one first inlet port for supplying the first precursor and at least one for discharging the first precursor a first outlet port, the second precursor channel 16 having at least one second inlet port for supplying the second precursor and at least one second port port ′ for discharging the i ^ ** and the purge gas channel 13 has For At least one third inlet port of gas should be purged. The purge gas channel 13 can also include one or more third outlet ports, or alternatively, the purge gas can be discharged via the outlet port of the precursor channel. For example, a plurality of inlet ports One end of the lengthwise precursor channel and the purge gas channel may be located, and the plurality of outlet tethers may be located at the other end of the precursor channel or the purge gas channel, so that the purge gas may be along the precursor channel, The gas passage is purged for flow. Alternatively, the inlet port may be located in the middle of a channel, and the outlet port may be located at the opposite end of a channel. The circulating conveyor belt 3 is formed to run between at least two turning points 26, 28. % style is obedient. In Fig. 1, the first precursor nozzle 14, the second precursor nozzle 16, the purge gas passage 13, and the discharge passage U are formed as part of the circulating conveyor belt 3 or attached or attached to the circulation.
送ΉΗ: q \干月1J ^ ，如此第一前驅物喷嘴14、第二前驅物喷嘴丨6、清 除乳體通道13及排放通道11可與循環式輸送帶3同時移 動。於_ .. 可替代實施例中’第一前驅物喷嘴14、第二， 驅物噴喈1 ft 、* 、 、岣除氣體通道13及排放通道11彼此相互連 一而形成循環式輸送帶3，此循環式輸送帶3運行於至少 3。 、28之間而形成第一循環式軌道。循環式輸送帶 可為實心且均勻輸送帶，或是循環式輸送帶3可為一鏈 8 201210702 配置或類似部分開口皮帶 如第1圖所示，義广 帶3而藉由循環式輪^ 6係以一距離相距於循環式輸送 2方向而自一第_ π 3所傳輸’並且基底6係以箭頭 基底6較佳地藉由循尹:輪22輸送至-第二基底滾輪23。 送帶3的方式進行輪輪送帶3以實質平行於循環式輸 3之間維持實此使得基底6 *循環式輸送帶 第二前驅物噴嘴16传用圖中，第一前驅物喷嘴14及 外側且由循環式輪送*㈣式軌道 噴嘴14、第二前驅物朝向基底6。第-前驅物 道η可具有一開σ，、二^除氣體通道13及排放通 第二前驅物喷嘴16、、、/^ 沿著第—前驅物喷嘴14、 ' ^除氣體通道π及排放通道1丨之縱 :而延伸且開放至循環式輸送帶3之外側。於第i圖中； 基底6及循環式輸送帶3係朝相同方向移動此表示 底5及循環式輪逆槩 、土 '輸运帶3具有-速度差，如此使得基底6之 表面受到至少筮—‘ 月J ’ β 、第二前驅物之數次作用而提供 長層於-可替代實施例中，基底6及循 帶3是採相反方向移動的方式進行設置，此優點為可在= 底6之表面提供多個生長層。 於第1圖中’基底6僅以位在循環式輸送帶3之頂部 上方的：式進行輸送。可採用相同設置方式將另一基底以 位在循每式輪送帶3下方的方式進行輸送。再者，撓性基 底係可沿著與至少部分第―德環式轨道—致之—路徑進ς 輸送。因此，基底可至少部分繞著循環式輸送帶3進行輸 201210702 送基底亦可為硬平面狀基底，例如··玻璃面板或類似物。 因此，本發明並不限定於任何型式之基底。 第2圖表示一實施例中之循環式輸送帶3係以箭頭4 方向、沿第-循環式軌道繞著第—轉軸26及第二轉軸28 之進行輸送。位於循環式輸送帶3下方之基底6沿著相反 於循環式輸送帶3之方向之箭頭2方向進行輸送。本發明 之裝置包括一光閉機構’利用光間機構沿著部分之循環式 軌道對於第-前驅物通道14、第二前驅物通道16、清除氣 體通道13及長條形排放通道u進行關。第2圖中之光 閉機構包括一光㈣7及轉點9,光間帶7用以運行於一 第二連續軌道之上，如此光閑帶7沿著部分之第一循環式 =道對於第—前驅物通道14、第二前驅物通道16、清除氣 、通道13及長條形排放通道u進行關閉，並且光閘帶7 以繞著轉點9、沿著篦-i車螬舳、音、社/_ μ 纟H㈣道進讀送。光閘機構可 :括二或多個轉點9。如第2圖所示，光間帶7係以位於 :環式輸送帶3之上的方式抵壓於循環式輪送帶3之頂 2先閘$ 7及循環式輸送帶3係以實質相同速度朝相同 :移動，於循環式輸送帶3、光間$ 7之表面的方向上 3:有任何的力量產生。當光㈣7抵壓於循環式輸送帶 、广光閑帶7便關閉第一前驅物通道“、第二前驅物通 、清除氣體通道13及長條形排放通 間機構防止第-前驅物通道14、第二前驅物通道=二 :體通道U及長條形排放通道卩之處理氣體流入大氣之 並且11些氣體僅供應至基底6之表面。 10 201210702 於一可替代實施例中’光閑機構亦可包括用於.關閉第 一前驅物通道14、第二前驅物通道16、清除氣體通道13 及長條形排放通道11之處理氣體之其它手段。舉例而言， 利用所提供至第一前驅物通道14、第二前驅物通道16、清 除氣體通道13及長條形排放通道11之複數移動壁可分別 地對於這些通道進行關閉。於一實施例中之處理氣體可採 用脈衝方式輸送，如此使得處理氣體僅供應至循環式輸送 帶3及基底6之一處理區域，例如於第2圖中之第一循環 式轨道之底部。 .......、，卜 〇 Ί示从 箭頭4方向、沿第一循環式軌道繞著第一轉軸26及第二轉 軸28之進行輸送。於本實施例中，第一前驅物通道η、 第二前驅物通道16係在第一循環式執道及循環式輸送帶3 =内側供應前驅物，因此I前驅物通道141二前驅物 :道16、清除氣體通道13及長條形排放通道 :環式輸送帶3之内側。基底6沿著第一轉轴26及= 28之方向輸送通過循環式輸 3之移動實質垂直於某广β u匕僱衣式輪迗帶 、基底6之移動方向。於第3圖中，-基底6經由循環式輪 一 基底6之各表面巾之 ㈣進行輸送，如此使得二 两甲之—表面會受到處理。 第4圖表示又一 前驅物通道16、清除氣=之第…物通道“、第二 放至循環式輪送帶3、：肢通道尸及長條形排放通道U開 側所設置之—基底β、側藉此對於循環式輸送帶3内 土-進行處理。於第4圖中，基底6為_ 11 201210702 長條形撓性基底，藉由一基底轉向滾輪2 « ^ A 4將基底6自第二 暴底滾輪23輸送至第一基底滾輪22。筮 ^ 埜w — 第一基底滾輪22及 弟一基底滾輪23亦可由用於對基底6進并w ^ ，… 浥仃收容、供應及儲 仔之另一種類的容器所取代。於第4圖 _之配置中，第一基 底滚輪22及第二基底滚輪23設置於循頊 ,, 倾知、式輸送帶3之内 侧，然而第一基底滾輪22及第二基底 班 农輪23亦可設置於 備％式輸送帶3之外側，如此使得基底 付I原6僅能經由循環式 輸送帶3所輸送。於第4圖中之基底6以箭頭2方向、沿 者循:裒式輸送帶3之相反方向進行輸送。可替代地，基底 可沿著相同於循環式輸送帶3 方 册 、别疋万向或垂直於循環式輸送 ▼ 3之移動方向進行輸送。 因為本發明之技術優點，本發明之概念可經由各種方 式力：以實％，對於熟習此項技藝者是顯而易見的。雖然較 貫施例揭路如上，然其並非用以限制本發明及其實施 例，在不脫離本發明之精神和範圍内，當可做更動與潤飾。 【圖式簡單說明】 、以下將配合所附圖式針對本發明之相關的較佳實施例 進行詳述如下： 第1圖係'根據本發明之裝置之一實施例之示意圖； 第2圖係根據本發明之裝置之另一實施例之示意圖； _第3圖係表不具有本發明之裝置之一基底之一配置之 示意圖；以及 第4圖係表不具有本發明之裝置之一基底之另一配置 12 201210702 之示意圖。 【主要元件符號說明】 2〜箭頭； 4 ~箭頭； 7~光閘帶； 11〜排放通道； 14〜第一前驅物喷嘴； 22〜第一基底滾輪； 24〜基底轉向滾輪； 28〜第二轉轴。 3〜循環式輸送帶； 6 ~基底； 9〜轉點； 13〜清除氣體通道； 1 6〜第二前驅物喷嘴； 23〜第二基底滾輪； 2 6〜第一轉轴； 13The ΉΗ: q \ dry month 1J ^ , such that the first precursor nozzle 14, the second precursor nozzle 丨 6, the clearing emulsion passage 13 and the discharge passage 11 can be moved simultaneously with the circulating conveyor belt 3. In the alternative embodiment, the 'first precursor nozzle 14 and the second, the squirt squirt 1 ft , * , , the purge gas passage 13 and the discharge passage 11 are connected to each other to form a circulating conveyor belt 3 The circulating conveyor belt 3 runs at least 3. The first cyclic track is formed between 28 and 28 . The circulating conveyor belt can be a solid and uniform conveyor belt, or the circulating conveyor belt 3 can be a chain 8 201210702 configuration or a similar partial open belt as shown in Fig. 1, and the wide belt 3 is provided by the circulating wheel ^ 6 The substrate 6 is transported from a _π3 by a distance from the end of the cyclic transport 2 and the substrate 6 is preferably transported by the arrow: the wheel 22 to the second substrate roller 23. The feeding belt 3 is carried out in such a manner that the wheel conveyor belt 3 is maintained substantially parallel to the circulating transmission 3 so that the base 6 * circulating conveyor belt second precursor nozzle 16 is transmitted, the first precursor nozzle 14 and The outer side is rotated by the circulating *(four) type rail nozzle 14 and the second precursor is directed toward the base 6. The first precursor track η may have an open σ, a second gas removal channel 13 and a discharge second precursor nozzle 16 , , / ^ along the first precursor nozzle 14 , ' ^ a gas channel π and a discharge The longitudinal direction of the channel 1 : extends and opens to the outside of the endless conveyor belt 3 . In the figure i; the substrate 6 and the endless conveyor belt 3 are moved in the same direction. This means that the bottom 5 and the circulating wheel are reversed, and the soil 'transport belt 3 has a speed difference, so that the surface of the substrate 6 is subjected to at least 筮. - 'month J ' β, the second precursor acts several times to provide a long layer - in an alternative embodiment, the substrate 6 and the band 3 are arranged in the opposite direction, which is at the bottom The surface of 6 provides a plurality of growth layers. In Fig. 1, the substrate 6 is conveyed only in a manner above the top of the endless conveyor belt 3. The other substrate can be transported in the same manner as it is under each of the transfer belts 3. Furthermore, the flexible substrate can be transported along a path that is at least partially associated with the first German-style track. Thus, the substrate can be at least partially wound around the endless conveyor belt. 201210702 The substrate can also be a hard planar substrate, such as a glass panel or the like. Accordingly, the invention is not limited to any type of substrate. Fig. 2 shows a recirculating conveyor belt 3 in an embodiment which is conveyed around the first-rotating shaft 26 and the second rotating shaft 28 in the direction of the arrow 4 along the first-circulating orbit. The substrate 6 located below the endless conveyor belt 3 is conveyed in the direction of the arrow 2 opposite to the direction of the endless conveyor belt 3. The apparatus of the present invention includes an optical closing mechanism that utilizes an optical mechanism to close the first precursor passage 14, the second precursor passage 16, the purge gas passage 13, and the elongated discharge passage u along a portion of the circulating rail. The light closing mechanism in FIG. 2 includes a light (four) 7 and a turning point 9, and the light inter-strip 7 is used to run on a second continuous track, such that the light idle band 7 follows a portion of the first cycle type = road for the first - the precursor passage 14, the second precursor passage 16, the purge gas, the passage 13 and the elongated discharge passage u are closed, and the shutter belt 7 is wound around the turn point 9, along the 篦-i rut, sound , Society / _ μ 纟 H (four) Road to read and send. The shutter mechanism can include two or more turning points 9. As shown in Fig. 2, the inter-belt belt 7 is pressed against the top of the circulating belt 3, the first gate $7, and the endless conveyor belt 3, substantially in the same manner as on the endless conveyor belt 3. The speed is towards the same: moving, in the direction of the surface of the endless conveyor belt 3, $7 between light: 3: Any force is generated. When the light (4) 7 is pressed against the circulating conveyor belt and the wide-light idle belt 7, the first precursor passage is closed, the second precursor passage, the purge gas passage 13 and the long-shaped discharge passage mechanism prevent the first-precursor passage 14 The second precursor channel=two: the processing gas of the body channel U and the elongated channel 卩 flows into the atmosphere and 11 gases are only supplied to the surface of the substrate 6. 10 201210702 In an alternative embodiment, the optical idle mechanism Other means for closing the process gases of the first precursor channel 14, the second precursor channel 16, the purge gas channel 13, and the elongated discharge channel 11 may also be included. For example, utilizing the first precursor provided The plurality of moving walls of the object passage 14, the second precursor passage 16, the purge gas passage 13, and the elongated discharge passage 11 can be closed for these passages respectively. In one embodiment, the process gas can be delivered by pulse, The process gas is supplied only to one of the endless conveyor belt 3 and the processing area of the substrate 6, for example at the bottom of the first recirculating track in Fig. 2. . . . , , from the arrow 4 direction The first circulating track η and the second precursor channel 16 are transported along the first circulating track 26 and the second rotating shaft 28. In the embodiment, the first precursor channel η and the second precursor channel 16 are in the first cyclic manner and cycle. Conveyor belt 3 = inner supply precursor, so I precursor channel 141 two precursors: channel 16, purge gas channel 13 and elongated discharge channel: the inner side of the endless conveyor belt 3. The substrate 6 along the first axis The direction of transport of 26 and = 28 is substantially perpendicular to the direction of movement of a wide β 匕 匕 匕 、 、 、 belt and base 6 in the direction of the circular transmission. In Fig. 3, the base 6 is passed through a circulating wheel-base. (4) of each surface towel of 6 is transported, so that the surface of the two nails will be treated. Figure 4 shows another precursor channel 16, the gas channel = the first object channel, and the second one is placed in the circulation wheel The belt 3, the limb passage body and the long discharge passage U are provided on the open side, the base β, and the side is processed for the inner belt of the endless conveyor belt 3. In Fig. 4, the substrate 6 is an elongated flexible substrate of _ 11 201210702, and the substrate 6 is transported from the second bottom roller 23 to the first substrate roller 22 by a base turning roller 2 « ^ A 4 .筮 ^ Wild w — The first base roller 22 and the second base roller 23 may also be replaced by another type of container for receiving, supplying and storing the substrate 6 and w ^ , . In the configuration of FIG. 4, the first base roller 22 and the second base roller 23 are disposed on the inner side of the conveyor belt 3, but the first base roller 22 and the second base Bannon wheel 23 are disposed. It can also be arranged on the outer side of the preparation conveyor belt 3, so that the base unit 6 can only be conveyed via the endless conveyor belt 3. The substrate 6 in Fig. 4 is conveyed in the direction of the arrow 2, in the opposite direction of the sputum conveyor belt 3. Alternatively, the substrate can be transported in the same direction as the end of the endless conveyor belt 3, the universal direction or the vertical direction of the transport. Because of the technical advantages of the present invention, the concept of the present invention can be varied in various ways: it is obvious to those skilled in the art. Although the present invention is not intended to limit the invention and its embodiments, it is possible to make changes and refinements without departing from the spirit and scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings in which: FIG. 1 is a schematic diagram of an embodiment of a device according to the present invention; Schematic diagram of another embodiment of the apparatus according to the present invention; FIG. 3 is a schematic diagram showing a configuration of one of the substrates of the apparatus of the present invention; and FIG. 4 is not a base of the apparatus of the present invention. Another schematic diagram of 12 201210702. [Main component symbol description] 2 ~ arrow; 4 ~ arrow; 7 ~ shutter band; 11 ~ discharge channel; 14 ~ first precursor nozzle; 22 ~ first substrate roller; 24 ~ base steering roller; Rotating shaft. 3 ~ circulating conveyor belt; 6 ~ base; 9 ~ turning point; 13 ~ clear gas passage; 1 6 ~ second precursor nozzle; 23 ~ second base roller; 2 6 ~ first shaft;