FI20105907A0 - Device - Google Patents

Device

Info

Publication number
FI20105907A0
FI20105907A0 FI20105907A FI20105907A FI20105907A0 FI 20105907 A0 FI20105907 A0 FI 20105907A0 FI 20105907 A FI20105907 A FI 20105907A FI 20105907 A FI20105907 A FI 20105907A FI 20105907 A0 FI20105907 A0 FI 20105907A0
Authority
FI
Finland
Application number
FI20105907A
Other languages
Finnish (fi)
Swedish (sv)
Inventor
Pekka Soininen
Tapani Alasaarela
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20105907A priority Critical patent/FI20105907A0/en
Publication of FI20105907A0 publication Critical patent/FI20105907A0/en
Priority to PCT/FI2011/050744 priority patent/WO2012028777A1/en
Priority to TW100130646A priority patent/TW201210702A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
FI20105907A 2010-08-30 2010-08-30 Device FI20105907A0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FI20105907A FI20105907A0 (en) 2010-08-30 2010-08-30 Device
PCT/FI2011/050744 WO2012028777A1 (en) 2010-08-30 2011-08-25 Apparatus
TW100130646A TW201210702A (en) 2010-08-30 2011-08-26 Apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20105907A FI20105907A0 (en) 2010-08-30 2010-08-30 Device

Publications (1)

Publication Number Publication Date
FI20105907A0 true FI20105907A0 (en) 2010-08-30

Family

ID=42669411

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20105907A FI20105907A0 (en) 2010-08-30 2010-08-30 Device

Country Status (3)

Country Link
FI (1) FI20105907A0 (en)
TW (1) TW201210702A (en)
WO (1) WO2012028777A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI124298B (en) * 2012-06-25 2014-06-13 Beneq Oy Apparatus for treating surface of substrate and nozzle head

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4009458B2 (en) * 2001-12-26 2007-11-14 株式会社神戸製鋼所 Plasma CVD deposition system
EP1992007A4 (en) * 2006-03-03 2010-05-05 Prasad Gadgil Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films
US8287647B2 (en) * 2007-04-17 2012-10-16 Lam Research Corporation Apparatus and method for atomic layer deposition

Also Published As

Publication number Publication date
TW201210702A (en) 2012-03-16
WO2012028777A1 (en) 2012-03-08

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Legal Events

Date Code Title Description
FD Application lapsed