WO2012028777A1 - Appareil - Google Patents

Appareil Download PDF

Info

Publication number
WO2012028777A1
WO2012028777A1 PCT/FI2011/050744 FI2011050744W WO2012028777A1 WO 2012028777 A1 WO2012028777 A1 WO 2012028777A1 FI 2011050744 W FI2011050744 W FI 2011050744W WO 2012028777 A1 WO2012028777 A1 WO 2012028777A1
Authority
WO
WIPO (PCT)
Prior art keywords
precursor
channels
substrate
channel
endless track
Prior art date
Application number
PCT/FI2011/050744
Other languages
English (en)
Inventor
Pekka Soininen
Tapani Alasaarela
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Publication of WO2012028777A1 publication Critical patent/WO2012028777A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments

Definitions

  • the present invention relates to an apparatus for processing a surface of a flexible substrate by subjecting the surface of a substrate to successive- sive surface reactions of at least a first precursor and a second precursor, and particularly to an apparatus according to the preamble of claim 1 .
  • ALD atomic layer deposition method
  • the prior art ALD-apparatuses usually comprise a nozzle head having one or more first precursor zones for subjecting the surface of the substrate to the first precursor, one or more second precursor zones for subjecting the surface of the substrate to the second precursor, and one or more purge gas zones or purge gas zones arranged between the first and second precursor zones for subjecting the surface of the substrate to a purge gas.
  • the zones are arranged alternatively in succession to the nozzle head: first precursor zone, purge gas zone, second precursor zone, purge gas zone, first precursor zone, purge gas zone, second precursor zone, and so on. Therefore when the nozzle head is moved on the substrate surface it will produce growth layers according to the principles of ALD method.
  • the nozzle head may also comprise discharge channels arranged between the first and second precursor zone or between a first precursor zone and a purge gas zone or between a second precursor zone and a purge gas zone.
  • the discharge channel is arranged to exhaust precursor and purge gas after the surface of the substrate is subjected to it.
  • each of these prior art precursor zones and purge gas zones comprise at least one inlet port for supplying the precursor or purge gas and at least one outlet port for exhausting the precursor or purge gas.
  • the nozzle head is formed to comprise several first and second nozzles such that a single scan with the nozzle head over the surface of the substrate forms several atomic layers on the surface of the substrate.
  • the single scan with the nozzle head may be done by moving either the nozzle head or the substrate.
  • the number of scan with the nozzle head is increasing by moving the nozzle head back and forth using fast speed for performing multiple scans over the surface of the substrate.
  • This prior art way for producing several atomic layer the disadvantage that the back and forth movement produces great mechanical forces the nozzle head has to stand. The forces are especially high as the nozzle has be stopped in the extreme position and accelerated again. Therefore the apparatus and the nozzle head are susceptible to damages.
  • the object of the present invention is to provide an apparatus such that the above mentioned prior art problems are solved.
  • the objects of the present invention are achieved with an apparatus according to the characterizing portion of claim 1 , characterized in that the two or more precursor nozzles are arranged to a travel along a first endless track between at least two turning points.
  • the present invention is based on the idea of providing an apparatus comprising two or more precursor nozzles for subjecting a surface of a substrate to at least a first and second precursor.
  • the apparatus further com- prises a moving mechanism for moving the precursor nozzles along an endless track between at least two turning points.
  • the precursor nozzles are connected to a conveyor belt of the like or to each other for forming a conveyer belt moving along the endless track.
  • the moving mechanism is arranged to move the precursor nozzles and the endless track continuously around at least turning points.
  • the precursor nozzle are elongated precursor channels.
  • the elongated precursor channels are arranged to a travel along a first endless track between at least two turning points in a direction substantially perpendicular to the longitudinal direction of the elongated precursor channels.
  • the apparatus of the present invention may be positioned for example above an substrate such that the end- less track rotates subjecting the substrate alternatively the surface reactions of at least a first and precursor as the precursors nozzles or channels move along the endless track.
  • the present invention has the advantage that it provides an apparatus which at the same time uses rotational movement and subjects the surface of the substrate uniformly to the precursors.
  • the rotational movement of the precursors nozzles along the endless track between at least two turning points decreases the stresses and forces subjected to the nozzle head as it is moved compared to back and forth movement.
  • the orientation of the precursors noz- zles or channels is maintained substantially constant such that the substrate may be subjected uniformly to the precursor materials.
  • figure 1 is a schematic view showing one embodiment of the apparatus according to the present invention.
  • FIG. 2 is a schematic view showing another embodiment of the apparatus according to the present invention.
  • figure 3 is a schematic view showing one arrangement of a substrate with the apparatus of the present invention.
  • figure 4 is a schematic view showing another arrangement of a substrate with the apparatus of the present invention.
  • Figure 1 shows one embodiment of the apparatus of the present invention.
  • the apparatus comprises a first turning axis 26 and a second turning axis 28.
  • An endless conveyor belt 3 is arranged between and around the first and second turning axis 26, 28.
  • the apparatus further comprises a moving mechanism (not shown) for rotating the conveyor belt 3 around the first and second turning axis 26, 28 in the direction of arrow 4 in figure 1 .
  • the apparatus may also comprise three or more turning axis or turning points.
  • the conveyor belt 3 is provided with one or more first precursor nozzles 14 for supplying first precursors and one or more second precursor nozzles 16 for supplying second precursor such that a surface of the substrate may be subjected to successive surface reactions of at least first and second precursors.
  • the precursor nozzles 14, 16 are provided to the conveyor belt 3 they are arranged to a travel along a first endless track between at least two turning points 26, 28 with the conveyor belt 3.
  • the precursor nozzles 14, 16 are formed as elongated precursor channels 14, 16 extending substantially in the direction of the turning axis 26, 28.
  • the two or more elongated precursor channels 14, 16 are arranged to a travel along the first endless track between in a direction substantially perpendicular to the longitudinal direction of the elongated precursor channels 14, 16, as shown in figure 1 .
  • the apparatus further comprises one or more elongated purge gas channels 13 and one or more elongated discharge channels 1 1 arranged substantially parallel with the precursor channels 14, 16 and to a travel along the first endless track in a direction substantially perpendicular to the longitudinal direction of the elongated precursor channels 14, 16.
  • the precursor channels 14, 16, purge gas channels 13 and discharge channels 1 1 may also be oriented in an angle relative to the direction of the turning axis 26, 28. The angle may be for example 1 to 10 degrees.
  • the channels 14, 16, 13, 1 1 are preferably arranged in the following order: a purge gas channel 13, a precursor channel 14, 16 and a discharge channel 1 1 , optionally repeated a plurality of times.
  • the channels 14, 16, 13, 1 1 are more preferably arranged in the following order: a first precursor channel 14, a discharge channel 1 1 , purge gas channel 13, a second precursor channel 16, a discharge channel 1 1 and a purge gas channel 13, optionally repeated a plurality of times.
  • the channels are arranged in the following order: a first precursor channel 14, a purge channel 13, a second precursor channel 16 and a purge gas channel 13, optionally repeated a plurality of times.
  • the first precursor channel 14 is provided with at least one first inlet port for supplying the first precursor and at least one first outlet port for discharging the first precursor
  • the second precursor chan- nel 16 is provided with at least one second inlet port for supplying the second precursor and at least one second outlet port for discharging the second precursor
  • the purge channel 13 is provided with at least one third inlet port for supplying purge gas.
  • the purge gas channel 13 may also comprise one or more third outlets or alternatively purge gas may be discharged through the outlet ports of the precursor channel.
  • the inlet ports may be located for example to one end of a longitudinal precursor channel and purge gas channel and the outlet ports may be located to another end of the precursor channel or purge gas channel such that the purge gas and precursors may flow along the channels.
  • the inlet ports may be located substantially in the middle of a channel and the outlet ports to the opposite ends of a channel.
  • the conveyor belt 3 forms the first fist endless track traveling between at least two turning points 26, 28.
  • the channels 14, 16, 13, 1 1 are made as part of the conveyor belt 3 or they are attached or connected to the conveyor belt 3 such that they move together with the conveyor belt 3.
  • the channels 14, 16, 13, 1 1 are connected to each other to form endless conveyor belt 3 traveling between at least two turning points 26, 28 forming the first endless track.
  • the conveyor belt 3 may be solid and uniform conveyor belt or it can be a chain arrangement or the like partly open belt.
  • a substrate 6 is transported over the conveyor belt 3 and at a distance from the conveyor belt 3.
  • the substrate 6 is transported from a first substrate roll 22 to a second substrate roll 23 in the direction of arrow 2 in figure 1 .
  • the substrate 6 is preferably transported substantially parallel to the conveyor belt 3 over the conveyor belt 3 such that the distance between the substrate 6 and the conveyor belt 3 is kept substantially constant.
  • the precursor channels 14, 16 are arranged to supply precursors outside the first endless track and outside of the conveyor belt 3 towards the substrate 6.
  • the channels 14, 16, 13, 1 1 may have an opening extending in the longitudinal direction of the channel 14, 16, 13, 1 1 and open to the outside of the conveyor belt 3.
  • the substrate 6 and the conveyor belt 3 are moved to the same direction.
  • the substrate 6 and the substrate 3 are arranged to move in opposite directions. This has the advantage that more growth layers may be provided to the surface of the substrate 6.
  • the substrate 6 is arranged to be transported only over the top of the conveyor belt 3. There could be another substrate below the conveyor belt 3 arranged in the same manner. Furthermore, the flexible substrate may be arranged to be transported along a path that substantially conforms at least partly the first endless track. Thus the substrate may be transported at least partly around the conveyor belt 3.
  • the substrate may also be a rigid plane like substrate such a s glass panel or the like. Thus the present in- vention is not restricted to any form a substrate.
  • Figure 2 shows an embodiment in which the conveyor belt is arranged to be transported along the first endless track around the turning points 26 and 28 in the direction of arrow 4.
  • the substrate 6 is transported below the conveyor belt 3 in opposite direction of the conveyor belt in the direction of ar- row 2.
  • the apparatus comprises a shutter mechanism for closing the channels 14, 16, 13, 1 1 along a part of the first endless track.
  • the shutter mechanism comprises a shutter belt 7 arranged to travel on a second continuous track such that the shutter belt 7 closes the channels 14, 16, 13, 1 1 along a part of the first endless track.
  • the shutter belt 7 is arranged to be transported along the second continuous track around the turning points 9.
  • the shutter mechanism may comprise two or more turning points 9.
  • the shutter belt 7 is set to be pressed against the conveyor belt 3 on top of the conveyor belt 3.
  • the shutter belt 7 and the conveyor belt 3 are moved to the same direction at substantially the same speed such that there is no force be- tween the belts 3, 7 in the direction of the surface of the belts 3, 7.
  • the shutter belt 7 closes the channels 14, 16, 13, 1 1 as it is pressed against the conveyor belt 3. Therefore the shutter mechanism prevents process gases from flowing into the atmosphere and the gases are only supplied to the substrate surface.
  • the shutter mechanism may also comprise other kinds of means for closing the process gas channels 14, 16, 13, 1 1
  • the channels 14, 16, 13, 1 1 may be closed for example individually by moving walls provided to the channels.
  • the process gases may be pulsed such that the gases are only supplied where the conveyor belt 3 and the substrate 6 are in a process zone, for example at the bottom part of the first endless track in figure 2.
  • Figure 3 shows an alternative embodiment in which the endless conveyor belt 3 is transported around the turning points 26, 28 along a first endless track in direction of arrow 4.
  • the precursor channels 14, 16 are arranged to supply precursors inside the first endless track and the conveyor belt 3.
  • the channels 14, 16, 13, 1 1 are open to the inside of the conveyor belt 3.
  • Substrates 6 are transported through the conveyor belt 3 in the direction of the turning axis 26, 28.
  • the conveyor belt 3 moves substantially perpendicularly to the moving direction of the substrates 6.
  • one substrate 6 is transported through the conveyor belt 3 such that the both surfaces of the substrates 6 are processed.
  • Figure 4 shows yet another embodiment in which the channels 14, 16, 13, 1 1 are open to the inside of the conveyor belt 3 to process a substrate 6 provided inside the conveyor belt 3.
  • the substrate 6 is an elongated flexible substrate which is arranged to be transported from a second substrate roll 23 to a first substrate roll 22 via a substrate turning roller 24 as shown in figure 4.
  • the substrate rolls 22, 23 may also be replaced by another kind of receptacles for receiving, supplying and storing substrate 6.
  • the substrate rolls 22, 23 are arranged inside the conveyor belt 3, but they may also be arranged outside the conveyor belt such that the substrate 6 is only transported through the conveyor belt 3.
  • the substrate is transported in the opposite direction of the conveyor belt 3 as shown by arrow 2.
  • the substrate may be transported in the same direc- tion with the conveyor belt 3 or perpendicularly to the moving direction of the conveyor belt 3.

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un appareil pour traiter une surface d'un substrat allongé (6) en soumettant ladite surface à des réactions de surface successives d'au moins un premier précurseur et un deuxième précurseur. L'appareil comprend au moins deux buses de précurseurs (14, 16) pour soumettre la surface (4) du substrat (6) à au moins un premier et un deuxième précurseur. Selon l'invention, les buses de précurseurs (14, 16) sont disposées le long d'une bande sans fin entre au moins deux axes de rotation (26, 28).
PCT/FI2011/050744 2010-08-30 2011-08-25 Appareil WO2012028777A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20105907A FI20105907A0 (fi) 2010-08-30 2010-08-30 Laite
FI20105907 2010-08-30

Publications (1)

Publication Number Publication Date
WO2012028777A1 true WO2012028777A1 (fr) 2012-03-08

Family

ID=42669411

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FI2011/050744 WO2012028777A1 (fr) 2010-08-30 2011-08-25 Appareil

Country Status (3)

Country Link
FI (1) FI20105907A0 (fr)
TW (1) TW201210702A (fr)
WO (1) WO2012028777A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014001631A1 (fr) * 2012-06-25 2014-01-03 Beneq Oy Appareil de traitement de surface d'un substrat et tête de buse

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003193241A (ja) * 2001-12-26 2003-07-09 Kobe Steel Ltd プラズマｃｖｄ成膜装置
WO2008130369A1 (fr) * 2007-04-17 2008-10-30 Lam Research Corporation Appareil et procédé pour dépôt de couche atomique
US20090304924A1 (en) * 2006-03-03 2009-12-10 Prasad Gadgil Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003193241A (ja) * 2001-12-26 2003-07-09 Kobe Steel Ltd プラズマｃｖｄ成膜装置
US20090304924A1 (en) * 2006-03-03 2009-12-10 Prasad Gadgil Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films
WO2008130369A1 (fr) * 2007-04-17 2008-10-30 Lam Research Corporation Appareil et procédé pour dépôt de couche atomique

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014001631A1 (fr) * 2012-06-25 2014-01-03 Beneq Oy Appareil de traitement de surface d'un substrat et tête de buse
CN104508179A (zh) * 2012-06-25 2015-04-08 Beneq有限公司 用于处理基材的表面的设备和喷嘴头
CN104508179B (zh) * 2012-06-25 2016-07-13 Beneq有限公司 用于处理基材的表面的设备和喷嘴头
US9683291B2 (en) 2012-06-25 2017-06-20 Beneq Oy Apparatus for processing surface of substrate and nozzle head

Also Published As

Publication number Publication date
TW201210702A (en) 2012-03-16
FI20105907A0 (fi) 2010-08-30

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