JP6255341B2 - 基板上に原子層を堆積させる方法および装置 - Google Patents
基板上に原子層を堆積させる方法および装置 Download PDFInfo
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- JP6255341B2 JP6255341B2 JP2014524958A JP2014524958A JP6255341B2 JP 6255341 B2 JP6255341 B2 JP 6255341B2 JP 2014524958 A JP2014524958 A JP 2014524958A JP 2014524958 A JP2014524958 A JP 2014524958A JP 6255341 B2 JP6255341 B2 JP 6255341B2
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- 238000000151 deposition Methods 0.000 title claims description 301
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- NPEOKFBCHNGLJD-UHFFFAOYSA-N ethyl(methyl)azanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C NPEOKFBCHNGLJD-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/45589—Movable means, e.g. fans
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- C—CHEMISTRY; METALLURGY
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- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
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- C—CHEMISTRY; METALLURGY
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- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/45578—Elongated nozzles, tubes with holes
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/45587—Mechanical means for changing the gas flow
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
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- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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Description
− 窒素インサートに接続し、円周方向に窒素細隙を作製する
− 従来のベアリングまたはエアベアリングでドラムを支えるための心棒として役立つ
− 例えば220mmの典型的直径のフィードスループレートを取り付けるための外縁でより大きな直径を提供する。
− ガスをフィードするための穴を提供する。
− ドラムのための軸方向(ガス)ベアリングとして役立つ。
Claims (13)
- 基板(4)上に原子層を堆積させる方法であって、
‐ 堆積ヘッド(6)に含まれる前駆体ガス供給部(8)から前記基板に向けて前駆体ガス(108)を供給することであって;前記前駆体ガス供給部が、ガス源(108’)からガスを受け取り供給することと、
‐ 原子層を形成するために、前記前駆体ガスを前記基板の上で反応させることであって;
・ 前記堆積ヘッドは、前記原子層を堆積させることの間に前記基板に少なくとも部分的に面する出力フェースを有し;
・ 前記出力フェースは、前記前駆体ガス供給部が提供され、前記基板の移動経路を画成する実質的に丸みを帯びた形状を有する;
反応させることと
を含み、前記方法が、
‐ 前記前駆体ガスを供給しながら回転軌道(62)に沿って前記堆積ヘッドを回転させることにより前記基板に沿って前記前駆体ガス供給部を移動させることであって;これにより原子層の積層を堆積させる、前記移動させることと;
‐・ 前記回転軌道の第一部分(T1)にわたり前記基板に向けて前記前駆体ガス供給部から前記前駆体ガスを供給することと;
・ 前記回転軌道の第二部分(T2)にわたり前記前駆体ガス供給部から前記前駆体ガスの供給を中断することと;
を切替えることであって、前記前駆体ガスを供給することと中断することとの切替えは、前記前駆体ガス供給部が前記回転軌道の前記第一部分から前記第二部分へと回転する際に、前記前駆体ガス供給部と前記ガス源との間のガス流路内に設けられた一つ以上のバルブにより提供される、前記方法。 - ‐ 前記基板が、前記回転軌道の前記第一部分にわたり、前記原子層を前記堆積させるために前記出力フェースに近接しており;
‐ 前記回転軌道の前記第二部分にわたり、前記基板が前記出力フェースから除去されまたは離れており;
‐ 前記回転軌道の前記第二部分にわたる前記前駆体ガスの漏れを防止するために、前記前駆体ガス供給部への供給される前駆体ガス流を向け直すこと、または、前記前駆体ガス供給部を通る前記前駆体ガス流をオフに切替えることにより、前記前駆体ガスの供給が中断される、
請求項1に記載の方法。 - ‐ 前記前駆体ガス供給部が、ドラムの表面の少なくとも一部を密閉する密閉片を介して前記ガス源からガスを受け取る前記ドラムに含まれ;
‐ 前記ドラムは、前記密閉片に対して回転可能であり;
‐ 前記ドラムまたは前記密閉片の一方が、一つ以上のガス出口/入口を含み;
‐ 前記ドラムまたは前記密閉片の他方が、前記ドラムまたは前記密閉片の前記一方により密閉されたその表面内に一つ以上の円周溝を含み;
‐ 前記前駆体ガス供給部から前記基板に向けて前記前駆体ガスを供給する間に、前記ガス出口/入口が前記密閉された前記円周溝と対向しており、前記ガス流路の一部が前記密閉された前記円周溝により形成される
請求項1または請求項2に記載の方法。 - 前記回転軌道の前記第二部分にわたり前記前駆体ガス供給部から前記前駆体ガスの供給を中断することは、前記ガス流路が前記ドラムまたは前記密閉片の前記他方の表面により中断されることにより一つ以上のバルブを備えるバルブシステムとして働くように、前記密閉された前記円周溝を、前記回転軌道の前記第一部分に沿って延び、前記回転軌道の前記第一部分と前記第二部分との間で終了させる、請求項3に記載の方法。
- ‐ 前記バルブが、前記回転軌道に沿って印加される固定磁場の極性により開位置と閉位置との間で制御され;
‐ 前記前駆体ガス供給部が前記回転軌道の前記第一部分と前記第二部分との間を回転する際に前記バルブを前記開位置と前記閉位置との間で切替えるために、前記磁場が前記回転軌道の前記第一部分と前記第二部分との間で極性を変える
請求項1〜請求項3いずれか一項に記載の方法。 - 前記前駆体ガス供給部が、相対回転部分を含む前記ガス流路を介して固定された前記ガス源からガスを受け取るドラムに含まれ;前記相対回転部分の間の開口部を通じた前記前駆体ガスの漏れが、前記前駆体ガスより高い圧力を有する前記開口部のまわりに提供されるパージガスにより防止される、請求項1に記載の方法。
- 前記相対回転部分が、二つ以上の同心チューブを含み、前記前駆体ガスが内側チューブを通じてフィードされ、前記パージガスが外側チューブを通じてフィードされる、請求項6に記載の方法。
- 前記パージガスが、前記ドラムを回転させるためのベアリングガスとしてさらに使用される、請求項6に記載の方法。
- 前記パージガスが、二つ以上の前記前駆体ガス供給部の間のガスカーテンとしてさらに使用される、請求項6に記載の方法。
- 基板(4)上に原子層を堆積させる装置であって、
‐ 使用時に前記基板に少なくとも部分的に面し、前記基板に向けて前駆体ガス(108)を供給するための前駆体ガス供給部(8)が提供された出力フェースを有する、堆積ヘッド(6)であって、
・ 前記出力フェースが、前記基板の移動経路を画成する実質的に丸みを帯びた形状を有する
前記堆積ヘッド(6)
を含み、前記装置が、
‐ 前記堆積ヘッドを回転可能に装着するためのマウント(10)
をさらに含み、
‐ 前記前駆体ガス供給部を前記基板に沿って移動させるために前記堆積ヘッドを回転させるために設けられたドライバ;
を含み、
‐ 前記堆積ヘッドが、原子層を形成するために前記供給された前記前駆体ガスを前記基板の上で反応させるために構築されており;こうして前記装置が、前記前駆体ガス供給部を回転軌道に沿って移動させながら原子層の積層を堆積させるために設けられており;
前記装置が、
‐ ガス流路を介して前記前駆体ガス供給部に前記前駆体ガスを提供するためのガス源(108’)と;
‐ ガス切替え構造体であって、
・ 前記回転軌道の第一部分にわたり前記前駆体ガス供給部から前記基板に向けて前記前駆体ガスを供給することと
・ 前記回転軌道の第二部分にわたり前記前駆体ガス供給部から前記前駆体ガスの供給を中断することと
を切替えるために設けられた前記ガス切替え構造体と
を含み、
前記ガス切替え構造体が、バルブおよびバルブ制御手段を含み、
‐ 前記バルブが、前記ガス流路を通る前記前駆体ガス流に影響を与えるために設けられ;
‐ 前記バルブ制御手段が、前記回転軌道の前記第二部分にわたり前記前駆体ガス供給部への前記前駆体ガス流を中断すべく、または、前記前駆体ガス供給部への前記前駆体ガス流を向け直すべく前記バルブを制御するために設けられる
装置。 - ‐ 前記前駆体ガス供給部が、ドラムの表面の少なくとも一部を密閉する密閉片を介して前記ガス源からガスを受け取る前記ドラムに含まれ;
‐ 前記ドラムが、前記密閉片に対して回転可能であり;
‐ 前記ドラムまたは前記密閉片の一方が、一つ以上のガス出口/入口を含み;
‐ 前記ドラムまたは前記密閉片の他方が、前記ドラムまたは前記密閉片の前記一方により密閉されたその表面内に一つ以上の円周溝を含み;
‐ 前記密閉された前記円周溝が、前記回転軌道の前記第一部分にわたり前記ガス出口/入口に対向していることにより前記ガス経路の一部を形成するように設けられる
請求項10に記載の装置。 - 前記回転軌道の前記第二部分にわたり前記前駆体ガス供給部から前記前駆体ガスの供給を中断することは、前記ガス流路が前記ドラムまたは前記密閉片の前記他方の表面により中断されることにより一つ以上のバルブを備えるバルブシステムとして働くように、前記密閉された前記円周溝を、前記回転軌道の前記第一部分に沿って延び、前記回転軌道の前記第一部分と前記第二部分との間で終了させる、請求項11に記載の装置。
- ‐ 前記バルブがバルブ磁石を含み、前記バルブが、前記バルブ磁石に印加される外部磁場の極性に応じて開状態と閉状態との間で切替えるために設けられ;
‐ 前記バルブ制御手段が、前記回転軌道の固定経路に沿って設けられた制御磁石であって、前記前駆体ガス供給部が前記回転軌道の前記第一部分と前記第二部分との間を回転する際に前記バルブを前記開状態と閉状態との間で切替えるために、前記回転軌道の前記第一部分と前記第二部分との間で反対の磁気極性を有する前記制御磁石を含む、
請求項10に記載の装置。
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EP11177166.3 | 2011-08-10 | ||
EP11177166A EP2557198A1 (en) | 2011-08-10 | 2011-08-10 | Method and apparatus for depositing atomic layers on a substrate |
PCT/NL2012/050540 WO2013022339A1 (en) | 2011-08-10 | 2012-07-30 | Method and apparatus for depositing atomic layers on a substrate |
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US (1) | US9567671B2 (ja) |
EP (2) | EP2557198A1 (ja) |
JP (1) | JP6255341B2 (ja) |
KR (1) | KR101942605B1 (ja) |
CN (1) | CN103874783B9 (ja) |
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US9567671B2 (en) | 2017-02-14 |
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KR20140064851A (ko) | 2014-05-28 |
WO2013022339A1 (en) | 2013-02-14 |
CN103874783A (zh) | 2014-06-18 |
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EP2742167A1 (en) | 2014-06-18 |
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