TW201209913A - Dry etching method and semiconductor device fabrication method - Google Patents
Dry etching method and semiconductor device fabrication method Download PDFInfo
- Publication number
- TW201209913A TW201209913A TW100129337A TW100129337A TW201209913A TW 201209913 A TW201209913 A TW 201209913A TW 100129337 A TW100129337 A TW 100129337A TW 100129337 A TW100129337 A TW 100129337A TW 201209913 A TW201209913 A TW 201209913A
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- Prior art keywords
- gas
- etching
- vacuum chamber
- supply
- plasma
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Links
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- 238000001312 dry etching Methods 0.000 title claims abstract description 9
- 238000005389 semiconductor device fabrication Methods 0.000 title 1
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- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
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- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010183989 | 2010-08-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201209913A true TW201209913A (en) | 2012-03-01 |
Family
ID=45605190
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100129337A TW201209913A (en) | 2010-08-19 | 2011-08-17 | Dry etching method and semiconductor device fabrication method |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5416280B2 (fr) |
TW (1) | TW201209913A (fr) |
WO (1) | WO2012023537A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI724465B (zh) * | 2018-09-11 | 2021-04-11 | 日商東芝記憶體股份有限公司 | 半導體裝置之製造方法及蝕刻氣體 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103832965B (zh) * | 2012-11-23 | 2017-02-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 基片刻蚀方法 |
JP6334369B2 (ja) * | 2014-11-11 | 2018-05-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
US9576811B2 (en) | 2015-01-12 | 2017-02-21 | Lam Research Corporation | Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) |
US9806252B2 (en) | 2015-04-20 | 2017-10-31 | Lam Research Corporation | Dry plasma etch method to pattern MRAM stack |
US9870899B2 (en) | 2015-04-24 | 2018-01-16 | Lam Research Corporation | Cobalt etch back |
US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
US10096487B2 (en) | 2015-08-19 | 2018-10-09 | Lam Research Corporation | Atomic layer etching of tungsten and other metals |
US10229837B2 (en) | 2016-02-04 | 2019-03-12 | Lam Research Corporation | Control of directionality in atomic layer etching |
US10727073B2 (en) | 2016-02-04 | 2020-07-28 | Lam Research Corporation | Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces |
US9991128B2 (en) | 2016-02-05 | 2018-06-05 | Lam Research Corporation | Atomic layer etching in continuous plasma |
US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
US10559461B2 (en) | 2017-04-19 | 2020-02-11 | Lam Research Corporation | Selective deposition with atomic layer etch reset |
US10832909B2 (en) | 2017-04-24 | 2020-11-10 | Lam Research Corporation | Atomic layer etch, reactive precursors and energetic sources for patterning applications |
US10763083B2 (en) | 2017-10-06 | 2020-09-01 | Lam Research Corporation | High energy atomic layer etching |
JP6705023B2 (ja) * | 2018-01-31 | 2020-06-03 | 株式会社日立ハイテク | プラズマ処理方法、及びプラズマ処理装置 |
CN111937122A (zh) | 2018-03-30 | 2020-11-13 | 朗姆研究公司 | 难熔金属和其他高表面结合能材料的原子层蚀刻和平滑化 |
WO2021181768A1 (fr) * | 2020-03-10 | 2021-09-16 | パナソニックIpマネジメント株式会社 | Procédé de nettoyage de composant électronique et procédé de fabrication de puce à élément |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006278827A (ja) * | 2005-03-30 | 2006-10-12 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
GB0508706D0 (en) * | 2005-04-28 | 2005-06-08 | Oxford Instr Plasma Technology | Method of generating and using a plasma processing control program |
JP4707178B2 (ja) * | 2005-06-29 | 2011-06-22 | キヤノンマーケティングジャパン株式会社 | エッチング方法およびエッチング装置 |
JP5234591B2 (ja) * | 2006-07-28 | 2013-07-10 | Sppテクノロジーズ株式会社 | 終点検出可能なプラズマエッチング方法及びプラズマエッチング装置 |
JP2008205436A (ja) * | 2007-01-26 | 2008-09-04 | Toshiba Corp | 微細構造体の製造方法 |
JP2010021442A (ja) * | 2008-07-11 | 2010-01-28 | Ulvac Japan Ltd | プラズマ処理方法及びプラズマ処理装置 |
-
2011
- 2011-08-15 JP JP2012529594A patent/JP5416280B2/ja active Active
- 2011-08-15 WO PCT/JP2011/068517 patent/WO2012023537A1/fr active Application Filing
- 2011-08-17 TW TW100129337A patent/TW201209913A/zh unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI724465B (zh) * | 2018-09-11 | 2021-04-11 | 日商東芝記憶體股份有限公司 | 半導體裝置之製造方法及蝕刻氣體 |
Also Published As
Publication number | Publication date |
---|---|
JP5416280B2 (ja) | 2014-02-12 |
JPWO2012023537A1 (ja) | 2013-10-28 |
WO2012023537A1 (fr) | 2012-02-23 |
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