TW201209913A - Dry etching method and semiconductor device fabrication method - Google Patents
Dry etching method and semiconductor device fabrication method Download PDFInfo
- Publication number
- TW201209913A TW201209913A TW100129337A TW100129337A TW201209913A TW 201209913 A TW201209913 A TW 201209913A TW 100129337 A TW100129337 A TW 100129337A TW 100129337 A TW100129337 A TW 100129337A TW 201209913 A TW201209913 A TW 201209913A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- etching
- vacuum chamber
- supply
- plasma
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 64
- 238000001312 dry etching Methods 0.000 title claims abstract description 9
- 238000005389 semiconductor device fabrication Methods 0.000 title 1
- 238000005530 etching Methods 0.000 claims abstract description 114
- 230000008021 deposition Effects 0.000 claims abstract description 51
- 230000001681 protective effect Effects 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 10
- 239000011737 fluorine Substances 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims description 51
- 230000008569 process Effects 0.000 claims description 29
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000003085 diluting agent Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 241000238631 Hexapoda Species 0.000 claims description 4
- 235000007164 Oryza sativa Nutrition 0.000 claims description 3
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical compound C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 claims description 3
- 235000009566 rice Nutrition 0.000 claims description 3
- 239000004575 stone Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 241000209094 Oryza Species 0.000 claims 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 210000003298 dental enamel Anatomy 0.000 claims 1
- 238000005096 rolling process Methods 0.000 claims 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 253
- 229910018503 SF6 Inorganic materials 0.000 description 17
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 17
- 239000010410 layer Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- 239000012895 dilution Substances 0.000 description 11
- 238000010790 dilution Methods 0.000 description 11
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 8
- 230000007935 neutral effect Effects 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 125000001153 fluoro group Chemical group F* 0.000 description 5
- 230000001276 controlling effect Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 239000008267 milk Substances 0.000 description 2
- 210000004080 milk Anatomy 0.000 description 2
- 235000013336 milk Nutrition 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 235000009917 Crataegus X brevipes Nutrition 0.000 description 1
- 235000013204 Crataegus X haemacarpa Nutrition 0.000 description 1
- 235000009685 Crataegus X maligna Nutrition 0.000 description 1
- 235000009444 Crataegus X rubrocarnea Nutrition 0.000 description 1
- 235000009486 Crataegus bullatus Nutrition 0.000 description 1
- 235000017181 Crataegus chrysocarpa Nutrition 0.000 description 1
- 235000009682 Crataegus limnophila Nutrition 0.000 description 1
- 235000004423 Crataegus monogyna Nutrition 0.000 description 1
- 240000000171 Crataegus monogyna Species 0.000 description 1
- 235000002313 Crataegus paludosa Nutrition 0.000 description 1
- 235000009840 Crataegus x incaedua Nutrition 0.000 description 1
- 239000004341 Octafluorocyclobutane Substances 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910001570 bauxite Inorganic materials 0.000 description 1
- 210000000476 body water Anatomy 0.000 description 1
- 238000009933 burial Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 150000003463 sulfur Chemical class 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 210000003813 thumb Anatomy 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010183989 | 2010-08-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201209913A true TW201209913A (en) | 2012-03-01 |
Family
ID=45605190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100129337A TW201209913A (en) | 2010-08-19 | 2011-08-17 | Dry etching method and semiconductor device fabrication method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5416280B2 (fr) |
| TW (1) | TW201209913A (fr) |
| WO (1) | WO2012023537A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI724465B (zh) * | 2018-09-11 | 2021-04-11 | 日商東芝記憶體股份有限公司 | 半導體裝置之製造方法及蝕刻氣體 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103832965B (zh) * | 2012-11-23 | 2017-02-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 基片刻蚀方法 |
| JP6334369B2 (ja) * | 2014-11-11 | 2018-05-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| US9576811B2 (en) | 2015-01-12 | 2017-02-21 | Lam Research Corporation | Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) |
| US9806252B2 (en) | 2015-04-20 | 2017-10-31 | Lam Research Corporation | Dry plasma etch method to pattern MRAM stack |
| US9870899B2 (en) | 2015-04-24 | 2018-01-16 | Lam Research Corporation | Cobalt etch back |
| US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
| US10096487B2 (en) | 2015-08-19 | 2018-10-09 | Lam Research Corporation | Atomic layer etching of tungsten and other metals |
| US10229837B2 (en) | 2016-02-04 | 2019-03-12 | Lam Research Corporation | Control of directionality in atomic layer etching |
| US10727073B2 (en) | 2016-02-04 | 2020-07-28 | Lam Research Corporation | Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces |
| US9991128B2 (en) | 2016-02-05 | 2018-06-05 | Lam Research Corporation | Atomic layer etching in continuous plasma |
| US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
| US10559461B2 (en) | 2017-04-19 | 2020-02-11 | Lam Research Corporation | Selective deposition with atomic layer etch reset |
| US10832909B2 (en) | 2017-04-24 | 2020-11-10 | Lam Research Corporation | Atomic layer etch, reactive precursors and energetic sources for patterning applications |
| US10763083B2 (en) | 2017-10-06 | 2020-09-01 | Lam Research Corporation | High energy atomic layer etching |
| JP6705023B2 (ja) * | 2018-01-31 | 2020-06-03 | 株式会社日立ハイテク | プラズマ処理方法、及びプラズマ処理装置 |
| CN111937122A (zh) | 2018-03-30 | 2020-11-13 | 朗姆研究公司 | 难熔金属和其他高表面结合能材料的原子层蚀刻和平滑化 |
| WO2021181768A1 (fr) * | 2020-03-10 | 2021-09-16 | パナソニックＩｐマネジメント株式会社 | Procédé de nettoyage de composant électronique et procédé de fabrication de puce à élément |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006278827A (ja) * | 2005-03-30 | 2006-10-12 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| GB0508706D0 (en) * | 2005-04-28 | 2005-06-08 | Oxford Instr Plasma Technology | Method of generating and using a plasma processing control program |
| JP4707178B2 (ja) * | 2005-06-29 | 2011-06-22 | キヤノンマーケティングジャパン株式会社 | エッチング方法およびエッチング装置 |
| JP5234591B2 (ja) * | 2006-07-28 | 2013-07-10 | Ｓｐｐテクノロジーズ株式会社 | 終点検出可能なプラズマエッチング方法及びプラズマエッチング装置 |
| JP2008205436A (ja) * | 2007-01-26 | 2008-09-04 | Toshiba Corp | 微細構造体の製造方法 |
| JP2010021442A (ja) * | 2008-07-11 | 2010-01-28 | Ulvac Japan Ltd | プラズマ処理方法及びプラズマ処理装置 |
-
2011
- 2011-08-15 JP JP2012529594A patent/JP5416280B2/ja active Active
- 2011-08-15 WO PCT/JP2011/068517 patent/WO2012023537A1/fr active Application Filing
- 2011-08-17 TW TW100129337A patent/TW201209913A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI724465B (zh) * | 2018-09-11 | 2021-04-11 | 日商東芝記憶體股份有限公司 | 半導體裝置之製造方法及蝕刻氣體 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5416280B2 (ja) | 2014-02-12 |
| JPWO2012023537A1 (ja) | 2013-10-28 |
| WO2012023537A1 (fr) | 2012-02-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201209913A (en) | Dry etching method and semiconductor device fabrication method | |
| TWI459464B (zh) | 選擇性抑制含有矽及氮兩者之材料的乾蝕刻率之方法 | |
| TWI687549B (zh) | 用於高深寬比溝槽的均等鎢蝕刻 | |
| Dussart et al. | Plasma cryogenic etching of silicon: from the early days to today's advanced technologies | |
| Wu et al. | High aspect ratio silicon etch: A review | |
| KR102358732B1 (ko) | 플라즈마 에칭 방법 및 플라즈마 에칭 장치 | |
| TWI558836B (zh) | 用於控制各種材料的蝕刻選擇性的系統及方法 | |
| TWI375268B (en) | Selective etching of carbon-doped low-k dielectrics | |
| US20140342569A1 (en) | Near surface etch selectivity enhancement | |
| CN109906500A (zh) | 选择性的SiN侧向内凹 | |
| TW201142941A (en) | Method of controlling trench microloading using plasma pulsing | |
| TW201740462A (zh) | 在溝槽的側壁或平坦表面上選擇性地形成氮矽化合物膜的方法 | |
| TW200826189A (en) | Silicon structure with opening having high aspect ratio, method for manufacturing the silicon structure, apparatus for manufacturing the silicon structure, program for manufacturing the silicon structure, and method for manufacturing etching mask for… | |
| TWI555080B (zh) | Dry etching method | |
| TW200947546A (en) | Substrate plasma processing apparatus and plasma processing method | |
| EP3073518B1 (fr) | Procédé de gravure d'une couche à graver | |
| CN104303274B (zh) | 等离子体蚀刻方法及等离子体处理装置 | |
| AU2017345050A1 (en) | Preclean methodology for superconductor interconnect fabrication | |
| Agarwal et al. | Effect of simultaneous source and bias pulsing in inductively coupled plasma etching | |
| US11319630B2 (en) | Deposition apparatus and deposition method | |
| TW201037765A (en) | Dry etching method | |
| JPWO2019087850A1 (ja) | エッチング方法及び半導体の製造方法 | |
| KR20220017837A (ko) | 실리콘의 드라이 에칭 방법 | |
| JP2002540627A (ja) | キセノンの付加によるシリコン酸化物のエッチング割合及び基板選択性の向上 | |
| JP5443937B2 (ja) | シリコン構造体の製造方法及びその製造装置並びにその製造プログラム |