201209913 六、發明說明： 【發明所屬之技術領域】 本發明是關於一種乾蝕刻方法以及半導體裝置的 製造方法。 【先前技術】 a以往已知用含有氟的氣體，在基板形成凹部或貫孔 的乾蝕刻方法。在將含有氟的氣體電漿化，將基板的矽 f蝕刻的狀況，已知由於電漿中的氟基與矽的反應是自 發的’所以不只是在基板厚度方向進行蝕刻，在略垂直 於基板厚度方向也進行蝕刻，成為等向性（isotropy) 、形狀’彳于不到縱橫比（aspect加丨〇)高的孔。對此’ 二住彳木用在孔的内表面形成保護膜來抑制等向性蝕刻 的方法（例如參照專利文獻υ。 ，如在專利文獻i，記載著交互進行卩％氣體進 程序’與在以颠刻形成的孔的内表面形成保護 臊的聚合程序。 【先前技術文獻】 【專利文獻】 ^’利^^、1】特表平07-503815號公報 要替ΐ二刻程序以及聚合程序的狀況，需 到曰沾^ 及沈積（deP〇sit丨on)氣體’為了得 況。又，A夕辟阶姑序數會變多，而有生產性低落的狀 夕& 、、友結構的矽基板形成貫穿孔（Through 201209913201209913 VI. Description of the Invention: [Technical Field] The present invention relates to a dry etching method and a method of manufacturing a semiconductor device. [Prior Art] A conventional dry etching method in which a concave portion or a through hole is formed in a substrate by using a gas containing fluorine is known. In the case where the fluorine-containing gas is plasma-treated and the 矽f of the substrate is etched, it is known that since the reaction between the fluorine group and the ruthenium in the plasma is spontaneous, it is not only etched in the thickness direction of the substrate, but is slightly perpendicular to the substrate. The substrate is also etched in the thickness direction to form an isotropic (isotropy) shape, and the shape is less than a hole having a high aspect ratio (aspect addition). In this case, the method of forming a protective film on the inner surface of the hole to suppress isotropic etching (for example, refer to the patent document ,. As in Patent Document i, it is described that the 卩% gas enters the program interactively' The polymerization process of protecting the crucible is formed on the inner surface of the hole formed by the indentation. [Prior Art Document] [Patent Literature] ^ '利^^, 1】Special Table No. 07-503815, the second program and the aggregation procedure The situation needs to go to the ^ ^ and the deposition (deP〇sit丨on) gas 'in order to get the situation. In addition, the number of A 辟 阶 姑 姑 姑 姑 姑 姑 姑 姑 姑 姑 生产 生产 生产 生产 生产 生产 生产 生产 生产 生产 生产 生产 生产 生产 生产 生产 生产 生产 生产 生产矽 Substrate forms a through hole (Through 201209913
Silicon Via)的狀況，會有粒士受 辑4猎由僅一次塗佈#罩（resist mask)必須形成貫孔的狀沉，需要提升對遮罩的選擇比 (selective ratio )。 【發明内容】 ，本發明有f於上述問題點，其目的為提p種乾蚀 哀方法及半導體裝置之製造方法向性 (anisotropy) _ 形狀，並㈣ & 比。 刻方上點’根據本發明的^面的乾触 itJL*拇：“ Φ虫刻程序’將含有氟的蝕刻氣體引 在^^^ ,產生手段將該钱刻氣體電漿化’ 2 Γ 。，以及第二蝕刻程序，邊使在前述真空 刻ΐ體持續地減少，邊將沈積氣體供 刚ίΐ 稭由電漿化的前述蝕刻氣體，進行 刻的同時’藉由電漿化的前述沈積氣體將 保蠖臈形成在至少前述凹部的内側面。 〃根據上述方法’在第—钮刻程序，將含有氟的独刻 電t化來進行基板的蝕刻。然·，在第二蝕刻程序 +吏，刖述真空槽内存在的前述蝕刻氣體持續地減 ^邊將沈積氣體供給至前述真空槽内。因此，使钱刻 =的同時’保護膜被形成在至少凹部的側面。因此， 向性餘=ί序’精由形成在凹部側面的保護膜抑制等 ’進行異向性似彳’並在形成保護膜的第 行敍刻’所以就整體來說可提升餘刻速 度μ及對於罩4的選擇比，提高生產性。 201209913 以及^ ’别述前述沈積氣體含有氟化碳化合物； 給至前i真程序具備：將前述沈積氣體間歇地供 述第二法’沈積氣體含有氟化碳化合物，在前 前7—=:::^^料内表面 段的高頻=^取得將高頻電力供給至前述電漿產生手 -,,ηί〇 ^ °亚在則述苐一蝕刻程序以及前述第 根^上、/f稀釋氣體固定地供給至前述真空槽内。 ㈣Γ 34方法’在前述第—㈣程序以及前述第二 因1，即佶首Ϊ稀釋氣體固定地供給至前述真空槽内。 地供槽内祕刻氣體持續地減少’藉由固定 r:、由：::可?安定包含真空槽的負載阻抗。因 化。；^p制阻抗的不整合，所以可以將電聚安定 在例中，别述第二钱刻程序具備：從P奋速命、十， 體的蝕刻氣體供給源的供給了藉由該蝕刻氣體： 空槽之間設有的供給控二 二Ϊ直部下游的流路殘留的前侧氣體，藉 槽r壓引導至前述真空槽内，藉以將殘留 白勺引述蝕刻軋體供給至前述直介 根據上述方法’在第二蝕。 措由該敍刻氣體供給源與前述真空槽之間設有的；給 201209913 控制部來停止氣體之供給，藉由真空槽之負壓將在較前 述供給控制部下游的流路殘留的前述蝕刻氣體來進 行。因此，由於不需要基於氣體流量控制器（mass flow controller )進行的流量控制等，所以可抑制程序以及裝 置的複雜化。 在一例中，前述第二蝕刻程序具備：將前述下游的 流路殘留的蝕刻氣體，在前述供給控制部切斷前述蝕刻 氣體供給源的期間，經由前述真空槽内，向前述真空槽 的外部排氣，以及，將從前述沈積氣體的供給源間歇地 供給的前述沈積氣體，在前述供給控制部切斷前述蝕刻 氣體供給源的期間，經由前述真空槽内，向前述真空槽 的外部排氣。根據上述方法，由於邊將真空槽排氣，邊 進行殘留的蝕刻氣體的供給與沈積氣體的供給，所以可 在真空槽内部形成所需的氣體組成，可以形成縱橫比高 的凹部。 本發明的另一側面，是一種半導體裝置之製造方 法，在具有矽層與該矽層上所形成的罩的半導體基板， 形成貫穿前述矽層的貫穿孔，形成前述貫穿孔的程序， 具備：第一蝕刻程序，將含有氟的蝕刻氣體電漿化，在 前述基板形成凹部；第二蝕刻程序，邊使真空槽内存在 的前述#刻氣體持續地減少，邊供給沈積氣體，藉由前 述電漿化的前述#刻氣體，進行前述凹部的触刻的同 時，藉由電漿化的前述沈積氣體將保護膜形成在至少前 述凹部的内側面；以及在前述凹部貫穿前述石夕層時，除 去前述保護膜，形成前述貫穿孔的程序。 6 201209913 _ = 基 序在:含 減少，並將沈積 貫穿孔。因、ί >卩貫㈣層，崎去賴膜來做為 形成的伴第’刻程序’藉由在凹部的側面所 ::f抓抑制等向性的蝕刻進行，進行里向性勒 ^並在形成保護膜的第二蝕刻程序也進行蝕刻， 就4_體來說提升蝕刻速度以及罩等的選擇比，可以提高 生產性。 ° 在一例中，前述第二蝕刻程序具備在前述第一蝕 程序後，將前述沈積氣體間歇地重複供給至前述真办榫 ^在到前述凹部貫穿前述碎層為止，交互地複數 複前述第一蝕刻程序與前述第二蝕刻程序。根據此 法，可以形成縱橫比高的貫穿孔在相對厚的矽層。 【實施方式】 以下根據第一圖來說明本發明一實施形態。本 形態的蝕刻裝置卜是NLD ( Neutral Loop Dischar e ^ 電漿裝置，藉由磁石在真空槽内產生成為磁場突= 性環路。 π』蠘中 如第一圖所示，蝕刻裝置丨，具有被形成為大 蓋筒狀的真空槽ίο。真空槽10，係至少側壁部1〇a ^ 及上壁部10f是以石英等介電質所形成。又，在側 l〇a’設有圖未顯示之搬入口，該搬入口用來從鄰 201209913 石夕基板Sb搬入真空槽内，此搬入口藉由圖未顯示閘閥 變成可以開閉。 再者’在側壁部l〇a，設有排氣部l〇b，排氣部l〇b 將真空槽10内的氣體排氣。在此排氣部l〇b，連接有 圖未顯示的渦輪分子幫浦（turbomolecularpump)等’ 在到達特定真空度為止將真空槽10内的流體排氣。 在·真空槽1 〇的下部的大致中央，設有用來載置石夕 基板Sb的平台11。平台11是導電體組成，經由包含電 容器等的整合箱12，被連接於用來在平台11產生負偏 壓的第—高頻電源RF1。 又’在真空槽1〇的例如上壁部10f，形成有在真空 槽10内供給各種氣體的氣體供給部1〇(}。在氣體供給 部10d連接有氣體供給管15。在氣體供給管15設有用 來供給各種氣體至真空槽10内的氣體供給機構16。 本實施形態的氣體供給機構16,做為氣體供給源， 具備：稀釋氣體供給源17，供給稀釋氣體；蝕刻氣體 供給源18 ’供給蝕刻氣體；以及沈積氣體供給源19， 供給用來在基板Sb所形成的凹部形成保護膜的沈積氣 在本實施形態，做為稀釋氣體的Ar被充填於稀釋 氣體供給源17。稀釋氣體供給源17，被連接於將Ar 氣體供給至真空槽側的第一供給管2〇。第一供給管2〇 被連接於上述氣體供給管15。在第一供給管20與氣體 供給管15的連接部與稀釋氣體供給源丨7之間，設有控 制Ar氣體供給的稀釋氣體供給閥21與第一氣體流量控 201209913 制器22。第一氣體流量控制器22，具備流量感應器與 根據該感應器的檢測結果控制流量的流量控制閥，調節 Ar氣體的流量。又，稀釋氣體除了 Ar氣體外，也可以 用Xe氣體、Kr氣體、N2。 做為蝕刻氣體的SF6 (六氟化硫）氣體被充填在蝕 刻氣體供給源18。蝕刻氣體供給源18連接於將SF6氣 體供給至真空槽的第二供給管23。第二供給管23連接 於氣體供給管15。在第二供給管23與氣體供給管15 的連接部與蝕刻氣體供給源18之間，設有：做為供給 控制部的蝕刻氣體供給閥24，控制SF6氣體的供給；以 及第二氣體流量控制器25，調節SF6氣體的流量。又， 蝕刻氣體除了 SF6氣體外，也可以用NF2、F2、SiF4、 乂6?2等其他含有氟的氣體。 又，在沈積氣體供給源19，充填著做為沈積氣體 的C4F8 (八氟化環丁烷）氣體。沈積氣體供給源19被 連接於供給（：/8氣體至真空槽側的第三供給管26。第 三供給管26被連接於氣體供給管15。又，從供給C4F8 氣體的沈積氣體供給源19，經由第三供給管26到真空 槽10為止的流路長，短於從供給SF6氣體的蝕刻氣體 供給源18，經由第二供給管23，到真空槽10為止的流 路長。 在第三供給管26與氣體供給管15的連接部，與沈 積氣體供給源19之間，設有：沈積氣體供給閥27，控 制C4F8氣體的供給；以及第三氣體流量控制器28，調 節C4F8氣體的流量。第三氣體流量控制器28藉由控制 9 201209913 器（圖示省略）的控制，控制内藏的流量控制閥（圖示 省略），以特定間隔間歇地供給c4f8氣體。 氣體供給管15的途中，在氣體供給管15與各供給 管20、23、26的連接部與真空槽之間，具備：閥29， 供給以及停止供給混合氣體；以及氣體流量控制器30， 調整包含各氣體的混合氣體的流量，該各氣體是經由各 供給管20、23、26被供給來的。例如，在供給SF6氣 體來進行蝕刻程序時，藉由沈積氣體供給閥27,停止 C4F8氣體的供給。然後藉由第一氣體流量控制器22調 整在特定流量的Ar氣體，與藉由第二氣體流量控制器 25調整在特定流量的SF6氣體所組成的混合氣體，被氣 體流量控制器30調整做為混合氣體的流量，並被供給 至真空槽10。又，在供給做為沈積氣體的C4F8氣體的 程序，藉由蝕刻氣體供給閥24停止SF6的供給。然後 藉由第一氣體流量控制器22調整在特定流量的Ar氣 體，與藉由第三氣體流量控制器28調整在特定流量的 C4F8氣體所組成的混合氣體，邊被氣體流量控制器30 調整做為混合氣體的流量，邊被供給至真空槽10。 在真空槽10的外側，沿著其側壁部l〇a設有環狀 天線41。此天線41，在本實施形態是四層的天線，經 由整合箱42,被電性連接至第二高頻電源RF2。整合箱 42具有.阻隔電容^§ ^取得向頻電源RF2的内部阻抗 與包含真空槽10内的電漿的負載阻抗的整合。又，在 高頻電源RF2與整合箱42之間設有檢測高頻反射波的 檢測器44。此檢測器44，為了調整上述阻隔電容器的 201209913 容量，檢測内部阻抗與高頻電壓電流的相位。又，檢測 從天線側反射來的反射波的相位。然後，將反射波的相 位回饋至整合箱42，整合箱42根據回饋值的變動調節 上述阻隔電容器的容量。 β又，在天線41的外周設有磁線圈群43。磁線圈群 «是用來產生磁場為零的所謂磁中性環路的線圈，由 第一磁線圈43a、第二磁線圈43b、第三磁線圈4孔所 組成。這些個磁線圈43a〜43c為同一直徑的環狀線圈， 被配置成同轴。 在第磁線圈43a與苐二磁線圈43c，各在相同方 向供給電流，在中央的第二磁線圈43b，在與其他磁線 ，3a 43c相反方向供給電流。藉此，在真空槽1 〇的 電漿產生區域内，磁場為零的磁中性環路1^1以環狀連 續而被形成。在蝕刻氣體或沈積氣體被引進至直空样 10内的狀態，當在天線41供給高頻電力，則沿著“ 中性環路NL產生高密度電漿。 接下來，關於本實施形態的蝕刻方法，根據第二 it圖/詳述。第三圖是表示各閥24、27的開^ 及真空槽10内的蝕刻氣體以及沈積氣體的質 =體積）變化的圖。第三（a)圖表示控制叭的供 、，s的蝕刻氣體供給閥24的開閉時序，第三（b) 1、In the case of Silicon Via, there is a need for a spacer mask to form a through-hole shape, and a selective ratio to the mask is required. SUMMARY OF THE INVENTION The present invention has the above problems, and its object is to provide an anisotropy _ shape and a (four) & ratio of a dry etching method and a semiconductor device manufacturing method. On the square side, the dry touch itJL* thumb according to the present invention: "The Φ insect carving procedure" introduces an etching gas containing fluorine into the ^^^, and generates a means to plasmaize the money engraved '2 Γ . And the second etching process, while continuously reducing the vacuum engraving body, while depositing the gas for the etching gas to be pulverized by the slurry, while etching, the foregoing deposition gas by plasma The ruthenium is formed on at least the inner side surface of the concave portion. 〃 According to the above method, in the first-knocking procedure, the fluorine-containing etched electricity is used to etch the substrate. However, in the second etching process + 吏The foregoing etching gas existing in the vacuum chamber is continuously reduced to supply the deposition gas into the vacuum chamber. Therefore, the protective film is formed on at least the side of the concave portion. = 序 ' ' 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精Choose ratio to improve productivity. 201209913 And the above-mentioned deposition gas contains a fluorinated carbon compound; the prior art is provided to: the deposition gas is intermittently described in the second method, the deposition gas contains a fluorinated carbon compound, before the first 7-=::: ^^ The high frequency of the inner surface section of the material is obtained by supplying high-frequency power to the plasma generating hand-, and ηί〇^° is described in the first etching process and the above-mentioned first, /f dilution gas fixing The ground is supplied into the vacuum chamber. (4) The method 34 is in the above-mentioned fourth-fourth program and the second factor 1, that is, the dipping gas is fixedly supplied to the vacuum chamber. The secret gas in the ground supply is continuously reduced. 'By fixing r:, by ::: can? Set the load impedance of the vacuum tank. Because of the inconsistency of the impedance of the ^p system, the electricity can be stabilized in the example, and the second money program is not included. The front side gas which is supplied from the etching gas supply source from the P, and which is supplied by the etching gas: between the empty grooves and the flow path downstream of the straight portion of the supply control, is borrowed. The groove r is guided into the aforementioned vacuum tank, thereby quoting the residue The charging body is supplied to the direct medium according to the above method 'in the second eclipse. Between the quoting gas supply source and the vacuum chamber is provided; the 201209913 control unit is used to stop the supply of gas, and the vacuum chamber is negative. The pressure is performed by the etching gas remaining in the flow path downstream of the supply control unit. Therefore, since flow control or the like by a gas flow controller is not required, the program and the device can be suppressed from being complicated. In an example, the second etching process includes an etching gas remaining in the downstream flow path, and the inside of the vacuum chamber is passed through the vacuum chamber while the supply control unit cuts the etching gas supply source The exhaust gas and the deposition gas intermittently supplied from the supply source of the deposition gas are exhausted to the outside of the vacuum chamber through the vacuum chamber while the supply control unit cuts off the etching gas supply source. . According to the above method, since the supply of the residual etching gas and the supply of the deposition gas are performed while exhausting the vacuum chamber, a desired gas composition can be formed inside the vacuum chamber, and a concave portion having a high aspect ratio can be formed. According to still another aspect of the present invention, in a method of manufacturing a semiconductor device, a semiconductor substrate having a ruthenium layer and a cover formed on the ruthenium layer is formed with a through hole penetrating through the ruthenium layer to form the through hole, and includes: a first etching process for plasma-forming an etching gas containing fluorine to form a concave portion on the substrate; and a second etching process for supplying the deposition gas while continuously reducing the amount of the gas present in the vacuum chamber, by the electricity And slurrying the gas into the concave portion, forming a protective film on at least the inner side surface of the concave portion by the plasma deposition gas; and removing the concave portion through the stone layer The protective film forms a procedure for the through hole. 6 201209913 _ = The motif is: contains a decrease and will deposit through the hole. Because, ί > 卩 (4) layer, 崎 赖 赖 来 做 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉Further, etching is performed in the second etching process for forming the protective film, and the selectivity of the etching rate and the mask or the like is increased in the case of the 4_body, and the productivity can be improved. In one example, the second etching step includes, after the first etching process, intermittently repeatedly supplying the deposition gas to the first processing unit, and intermittently repeating the first portion until the concave portion penetrates the fragment layer The etching process is followed by the aforementioned second etching process. According to this method, a through hole having a high aspect ratio can be formed in a relatively thick ruthenium layer. [Embodiment] Hereinafter, an embodiment of the present invention will be described based on the first diagram. The etching apparatus of the present embodiment is an NLD (Neutral Loop Dischar e ^ plasma apparatus, which generates a magnetic field in a vacuum chamber by a magnet in a vacuum chamber. π 蠘) as shown in the first figure, the etching apparatus has The vacuum chamber 10 is formed in a vacuum tube groove. The vacuum chamber 10 is formed such that at least the side wall portion 1a and the upper wall portion 10f are formed of a dielectric such as quartz. The entrance is not shown, and the entrance is used to move into the vacuum chamber from the neighboring 201209913 Shixi substrate Sb. The inlet is opened and closed by the gate valve not shown in the figure. In addition, the exhaust is provided in the side wall portion l〇a. The portion l〇b, the exhaust portion l〇b exhausts the gas in the vacuum chamber 10. Here, the exhaust portion l〇b is connected to a turbo molecular pump (turbomolecular pump, etc.) not shown in the figure. The fluid in the vacuum chamber 10 is exhausted. The platform 11 for mounting the Shishi substrate Sb is provided substantially at the center of the lower portion of the vacuum chamber 1A. The stage 11 is composed of a conductor and is passed through an integrated case 12 including a capacitor or the like. , is connected to the first high used to generate a negative bias on the platform 11 In the upper wall portion 10f of the vacuum chamber, for example, a gas supply unit 1 that supplies various gases in the vacuum chamber 10 is formed. The gas supply unit 15 is connected to the gas supply unit 15 in the gas supply unit 10d. The supply pipe 15 is provided with a gas supply mechanism 16 for supplying various gases into the vacuum chamber 10. The gas supply mechanism 16 of the present embodiment is a gas supply source, and includes a diluent gas supply source 17 for supplying a dilution gas and an etching gas supply. The source 18' supplies an etching gas; and the deposited gas supply source 19 supplies a deposition gas for forming a protective film on the concave portion formed in the substrate Sb. In the present embodiment, Ar as a diluent gas is filled in the diluent gas supply source 17. The diluent gas supply source 17 is connected to the first supply pipe 2 that supplies the Ar gas to the vacuum tank side. The first supply pipe 2 is connected to the gas supply pipe 15. The first supply pipe 20 and the gas supply pipe A dilution gas supply valve 21 for controlling the supply of Ar gas and a first gas flow rate control 201209913 device 22 are provided between the connection portion of 15 and the diluent gas supply source 丨 7. The first gas flow rate control is performed. The flow controller 22 is provided with a flow rate sensor and a flow rate control valve for controlling the flow rate according to the detection result of the sensor, and the flow rate of the Ar gas is adjusted. Further, in addition to the Ar gas, the diluent gas may be Xe gas, Kr gas, or N2. The SF6 (sulfur hexafluoride) gas of the etching gas is filled in the etching gas supply source 18. The etching gas supply source 18 is connected to the second supply pipe 23 that supplies the SF6 gas to the vacuum chamber. The second supply pipe 23 is connected to the gas supply. a pipe 15. An etching gas supply valve 24 as a supply control unit is provided between the connection portion of the second supply pipe 23 and the gas supply pipe 15 and the etching gas supply source 18, and the supply of the SF6 gas is controlled; The gas flow controller 25 regulates the flow rate of the SF6 gas. Further, in addition to the SF6 gas, the etching gas may be a fluorine-containing gas such as NF2, F2, SiF4 or 乂6?2. Further, the deposited gas supply source 19 is filled with a C4F8 (octafluorocyclobutane) gas as a deposition gas. The deposition gas supply source 19 is connected to the supply (:/8 gas to the third supply pipe 26 on the vacuum tank side. The third supply pipe 26 is connected to the gas supply pipe 15. Further, from the deposition gas supply source 19 that supplies the C4F8 gas The flow path length from the third supply pipe 26 to the vacuum chamber 10 is shorter than the etching gas supply source 18 from which the SF6 gas is supplied, and the flow path to the vacuum chamber 10 is longer via the second supply pipe 23. A connection portion between the supply pipe 26 and the gas supply pipe 15 and a deposition gas supply source 19 are provided with a deposition gas supply valve 27 for controlling the supply of C4F8 gas, and a third gas flow controller 28 for regulating the flow rate of the C4F8 gas. The third gas flow controller 28 controls the built-in flow control valve (not shown) by controlling the control of the 201209913 (not shown), and intermittently supplies the c4f8 gas at a specific interval. On the way of the gas supply pipe 15. Between the connection portion between the gas supply pipe 15 and each of the supply pipes 20, 23, and 26 and the vacuum chamber, a valve 29 is provided to supply and stop the supply of the mixed gas, and the gas flow controller 30 adjusts the gas. The flow rate of the mixed gas is supplied to each of the supply pipes 20, 23, and 26. For example, when the SF6 gas is supplied to perform the etching process, the supply of the C4F8 gas is stopped by the deposition gas supply valve 27. Then, the Ar gas at a specific flow rate is adjusted by the first gas flow controller 22, and the mixed gas composed of the SF6 gas at a specific flow rate by the second gas flow controller 25 is adjusted by the gas flow controller 30 as The flow rate of the mixed gas is supplied to the vacuum chamber 10. Further, in the process of supplying the C4F8 gas as the deposition gas, the supply of the SF6 is stopped by the etching gas supply valve 24. Then, it is adjusted by the first gas flow controller 22. The Ar gas of a specific flow rate and the mixed gas of C4F8 gas at a specific flow rate by the third gas flow rate controller 28 are adjusted by the gas flow rate controller 30 as a flow rate of the mixed gas, and are supplied to the vacuum. The groove 10 is provided with a loop antenna 41 along the side wall portion 10a of the outside of the vacuum chamber 10. This antenna 41 is a four-layer antenna in the present embodiment, and is integrated through the integrated box. 42. Electrically connected to the second high frequency power source RF2. The integrated box 42 has a blocking capacitor that achieves integration of the internal impedance of the frequency power source RF2 with the load impedance of the plasma contained in the vacuum chamber 10. A detector 44 for detecting high-frequency reflected waves is provided between the high-frequency power source RF2 and the integrated box 42. The detector 44 detects the phase of the internal impedance and the high-frequency voltage and current in order to adjust the capacity of the 201209913 of the above-mentioned blocking capacitor. The phase of the reflected wave reflected from the antenna side. Then, the phase of the reflected wave is fed back to the integrated box 42, and the integrated box 42 adjusts the capacity of the above-described blocking capacitor in accordance with the variation of the feedback value. Further, a magnetic coil group 43 is provided on the outer circumference of the antenna 41. The magnetic coil group « is a coil for generating a so-called magnetic neutral loop having a zero magnetic field, and is composed of a first magnetic coil 43a, a second magnetic coil 43b, and a third magnetic coil 4 hole. These magnetic coils 43a to 43c are annular coils of the same diameter and are arranged coaxially. The first magnetic coil 43a and the second magnetic coil 43c are supplied with current in the same direction, and the central second magnetic coil 43b supplies current in the opposite direction to the other magnetic wires 3a to 43c. Thereby, in the plasma generation region of the vacuum chamber 1 ,, the magnetic neutral loop 1 1 having a zero magnetic field is continuously formed in a ring shape. In a state where the etching gas or the deposition gas is introduced into the straight space 10, when the high frequency power is supplied to the antenna 41, high-density plasma is generated along the "neutral loop NL. Next, the etching of this embodiment" The method is based on the second diagram/detail. The third diagram is a diagram showing the change of the opening of each of the valves 24 and 27 and the etching gas and the volume of the deposited gas in the vacuum chamber 10. The third (a) diagram Indicates the opening and closing timing of the supply of the control gas, and the etching gas supply valve 24 of s, and the third (b) 1.
=槽10⑽/6氣體量，第三（〇圖表示真空槽Γο /稀釋氣體量’第三（d)圖表示控制供給c4F 尤積氣體供給閥27的開閉時序，第三（e)圖表示 上槽10内的（：4卩8氣體量。 201209913 如第— Γ fi ^ is! — 51上層疊矽芦52不，基板Sb具有在層間絕緣膜 由SiOC等^介雷層疊結構。層間絕緣膜51是 成。在石夕層52上=/^ ’所謂的Wk材料所組 形成區域露出的開=。53 ’罩53咖 平台被載置於 特定壓，開始第一_呈UJ;'10第内減壓f 圖所示，a拄, 一粒不祝’如苐三（a) 藉由氣體流量㈣器直 =以，示，二 壓，=到===壓與Γ氣體供給源18的正 -钱刻氣體量E f)。 6㈣的電漿的目標值（即第 旦』：，氣體供給閥21變成開狀態，藉由氣體产 里_22以固定流量供給&氣體至直空=， 3〇二內(？各圖所示’真空槽1〇内的^量，曰藉由1 票值（第一稀釋氣體量Af)。供給sF=r 空槽：變；輪分子幫浦’持續排氣至真 施加第壓一至高基nRF1供給高頻電力至平台 再者’在真空槽1 〇的周邊所配罢沾势 磁線圈—在第一方向供 201209913 4:二與=磁線圈的電流相反的第二方向供 、：電抓。糟此，磁場為零的環狀磁 、 產生區域内連續產生。 衣峪在電漿 又，從第二高頻電源RF2供給高頻電力至 々天線41，藉由在充滿㈣氣體的電聚產 j或内產生南頻電場’沿著以磁線圈群43產生的磁 中性環路NL·產生電漿。 ㈤吁）座生的磁 #由^電^中的氟基或氟化硫系（SFx)的正離子， 53 ^ 一 夕曰52。〉又有方向性（directivity)的Λ传 等向性高的蝕刻進行，盥矽 土使 的表面脫離。另一方面從基板％ π,行異向性高的蝕刻。藉此，如第二(:) ===度方向以及垂直於厚度方向的 门（也稱面方向）形成蝕刻進行的凹部55。= slot 10 (10) / 6 gas amount, third (〇 diagram shows vacuum tank Γ ο / dilution gas amount 'the third (d) diagram shows the opening and closing timing of the control supply c4F gas supply valve 27, and the third (e) diagram shows (4:8 gas amount in the tank 10. 201209913 as the first - Γ fi ^ is! - 51 is stacked on the hoist 52, and the substrate Sb has a laminated structure in which the interlayer insulating film is made of SiOC or the like. The interlayer insulating film 51 Yes. On the Shixi layer 52 = / ^ 'The so-called Wk material group formation area exposed open = 53 ' hood 53 coffee platform is placed at a specific pressure, starting the first _ in UJ; '10 inside The pressure decompression f is shown in the figure, a拄, one grain does not wish '如苐三(a) by gas flow (four) device straight = to, show, two pressure, = to === pressure and helium gas supply source 18 positive - the amount of gas engraved E f). The target value of the plasma of 6 (four) (ie, the first denier): the gas supply valve 21 is turned on, and the gas supply _22 is supplied at a fixed flow rate to the gas to the straight space = 3〇二内 (? each figure shows the amount of vacuum chamber 1〇, 曰 by 1 vote value (first dilution gas amount Af). Supply sF=r empty slot: change; round molecular pump 'continued Exhaust to true Applying the first to the high base nRF1 to supply the high frequency power to the platform and then 'with the magnetic coil around the vacuum tank 1 ——in the first direction for 201209913 4: two opposite to the current of the = magnetic coil The direction is supplied, and the electric power is caught. In this case, the annular magnetic field with zero magnetic field is continuously generated in the generated region. The clothes are in the plasma, and the high-frequency power is supplied from the second high-frequency power source RF2 to the antenna 41, by The electricity generated by the (4) gas is generated or the south frequency electric field is generated. 'The magnetic neutral loop NL generated by the magnetic coil group 43 generates plasma. (5) )) The magnetic generated by the seat #由^ The base or the fluorinated sulfur-based (SFx) positive ion, 53 ^ 曰 曰 52.> There is also a direct directional etch of the omnidirectional isotropic, the surface of the bauxite is detached. From the substrate % π, an etching with high anisotropy is performed. Thereby, a recess 55 which is etched is formed as in the second (:) === degree direction and the gate (also referred to as the plane direction) perpendicular to the thickness direction.
從同開始時間tl到經過特定時間的時間L 目標深丄二㈣?凹部55 _到 邊體= 邊糟由氣體流量控制器28調節Α 真空槽側。 乃即為固疋流！，邊供給至 葬第—⑷圖所不’真空槽内1G的C4F8氣體量， 槽1G内的負壓與沈積氣體供 壓力差’立_達沈積細的目標值（第—沈積氣= 201209913From the same start time t1 to the time elapsed for a certain time L target depth ( (four)? recess 55 _ to edge = side margin is adjusted by the gas flow controller 28 Α vacuum groove side. It is the solid flow! , the amount of C4F8 gas in the vacuum chamber is not supplied to the burial section - (4), and the pressure difference between the negative pressure and the deposition gas in the tank 1G is set to a target value (deposited = 201209913)
Df)。被引進至直空择川6A 0的C^8氣體被電漿化，其電 聚合，如第二⑷圖所示，在凹 =i^。56形成有由氣化碳化合物(-系)組 程产如】第/、二圖所示’若從時間。經過為數百毫秒 j 1㈣下的特定時間ΔΤ1，則控制d氣體的供 :二：積，供給？變成閉狀態，Μ氣體的供給 二二-% ’在比變成閉狀態的閥27更下游的第三 ^給二26以及氣體供給管15内殘留著他氣體，作 =乳體供給閥27的下游的配管長度相對短，所以殘 留的相對少量的c4f8氣體，藉由 立刻;;;真空槽丨〇的下游。因此，如第三(二 =工槽10内的QF8氣體在將閥27做為閉狀態後 减少。 r π再ί，,當經過特定時間ΔΤ2則閥27變成開狀態， CUF曰8軋體被再供給至真空槽側。又，特定時間An，可 以疋在閥27從開狀態到閉狀態時與上述特定時間△ τι 相同的時間，相異時間也可以。再者，當第二次從闊 27變成開狀態經過特定時間ΔΤ1，則閥27變成閉狀 態。以下，閥27的開閉動作重複兩次。也就是說，從 第二侧程序的時間t2到時間t4，閥27變成開狀態， 在特定時間ΔΤ1後變成閉狀態的動作重複四次。 如此，藉由將做為沈積氣體的c^8氣體的供給間 歇^複數次f複’因體導致的QF8氣體的稀釋率 變冋，可以形成富碳（carb〇n_rich)的強固保護膜57。 14 201209913Df). The C^8 gas introduced into the Straight Air Selective 6A 0 is plasmad and its electropolymerization, as shown in the second (4) diagram, is concave = i^. 56 is formed by a gasification carbon compound (-system) component as shown in Fig. 2 and Fig. 2 from time. After a specific time ΔΤ1 for hundreds of milliseconds j 1 (four), control the supply of d gas: two: product, supply? When it is in a closed state, the supply of helium gas is two-two-%. In the third gas supply 26 and the gas supply pipe 15 which are downstream of the valve 27 which is in a closed state, the gas remains in the gas supply pipe 15, and is downstream of the milk supply valve 27. The length of the piping is relatively short, so a relatively small amount of c4f8 gas remains, by immediately;;; downstream of the vacuum tank. Therefore, as the third (two = QF8 gas in the working tank 10 is reduced after the valve 27 is closed), r π and then, when a certain time ΔΤ2 is passed, the valve 27 is opened, and the CUF曰8 is rolled. Further, it is supplied to the side of the vacuum tank. Further, the specific time An may be the same time as the above-mentioned specific time Δ τι when the valve 27 is from the open state to the closed state, and the different time may be used. When the predetermined state ΔΤ1 has elapsed, the valve 27 is in a closed state. Hereinafter, the opening and closing operation of the valve 27 is repeated twice. That is, from the time t2 of the second side program to the time t4, the valve 27 is opened. The operation of changing to a closed state after a certain time ΔΤ1 is repeated four times. Thus, by supplying the supply of c^8 gas as a deposition gas intermittently, the dilution rate of the QF8 gas due to the body is changed, thereby forming Carbon-rich (carb〇n_rich) strong protective film 57. 14 201209913
=’相較於持續地供給C4F8氣體的狀況，因A ，氣體的稀釋率變高’則可以減低Μ氣 士為石反原子及、氟原子或氟基等的比例。若解的^ 變少，解離而貢獻在蝕刻的氟基等會變少，所以可例 !=二的成二速度低落。又，將c而氣體間歇二: ::，況’氣的解離被抑制’離子可以產生主體二 水，所以可以更有效率地形成保護膜。 甩=' Compared with the continuous supply of C4F8 gas, the dilution ratio of A and gas becomes higher, and the ratio of helium to stone anti-atomic, fluorine atom or fluorine group can be reduced. If the amount of the solution is small, the dissociation contributes to the fluorinated fluorine group or the like which is reduced, so that the second speed of the example ==2 is lowered. Further, c and gas are intermittently two: ::, the dissociation of the gas is suppressed. The ions can generate the main body water, so that the protective film can be formed more efficiently.甩
::方面，從開始時間tl至經過特定時間 、’在-貫施沈積氣體的供給時，第—钱刻程序結束B 仃第二⑽程序。又，第—㈣程序，是藉由^ ^體以相對較高#刻速度將石夕層” _的程二 6 行刻：ίif邊以比第一蝕刻程序緩慢的速度使蝕刻： 區分^生保護膜57的其他程序，並非⑽刻次數來 若詳述的話，在第二_程序，首先如第三（a) = 共給闊Μ變成閉狀態。藉此，從飯刻氣 第亍止SF6氣體的供給，但從閥24到下游的 管23殘留* SF6氣體，在比第二供給管23下 15，殘留著Ar氣體以及SF6氣體的混 二t ^槽ig内也殘留著％氣體。相較於 氣體的流路，比沈積氣體供給閥”下游的配 3ί:蝕刻，供給閥24的下游配管長度較短，所 髀仫I供給官Μ以及氣體供給管15殘留的SF6氣 戶1以自、㈣氣體供給源18的正壓未被施加， 错減壓的真空槽1〇的負壓，被吸引至真空槽 201209913 藉;=°第三(b)圖所示，真空槽10内的sf6氣 里也』=下:由:ί持地，緩慢減少’、。 b殘留的sf6氣體，與在直—ί、; ^二及氣體供給管 即使閥24是閉狀態，也並^内殘/的’氣體’ 氣。因此，c4f8氣體導致保護6膜5 Ν =被排 進行:崎然也比第，程序_ i少因 但緩陵進仃，其_速度逐漸低落 = :度當Si:，氣體…= SF； 先測定做為保護膜57必要厚度才:山〇 態，預 凹部55的内表面56為止二工匕：物堆積在 白閥24下游的第二二時間、來异出。又，來 下條件來調整··預先求;/在第：：:路長是依照以 害保護膜形成的範圍「氣不妨 變成閉狀態時，氣體#體之最大1，在閥24 第二=管2二大^^^^ 阳氣體量S :Γ時間t3之間（第—轴刻程序）， 6乳體里疋第一韻刻氣體量Ef，相對較多時門，齋將 產生區域内的氟基多，主要進行基板Sb的麵刻日。然後水 =開始保護臈形成的時間12，到開始第二钱刻程序的時 二二^ ’保濩膜57的成膜速度變成低的狀態，後， s開始第二敍刻程序(時間t3)，則由於心氣二 201209913 續地減少，所LV扣甘 變化，保護膜也會減少，蝕刻速度往變小的方向 、成膜速度往變大的方向變化。n， 終了時(時間⑴，保護二成膜速 此，在第二蝕會，保護膜形成變成主體。藉 以第-則程序^η呆f膜57被形成的同時，從僅 被形成，並在1凹^ 5=55 ’更增加深度的凹部55 在第二飯刻程庠的内面，保制57被形成。又， 比在第―：刻ί库被/虫刻的凹部55的深度增加部分， 小’但藉由將第 增加部分 可以提升生產ir，提升關速度以及選擇比， 態（時間t2) 1 ，二'二積乳體供給閥27做為開狀 間⑴。間變成閉狀態（時 在緩慢但為了 積極·合於沈積氣體， 將打開閥27的時序二:而產二限於此’也可以 ’斤興關閉閥24的時序變成同時。 °述，在本實施形態，如此，在SF6氣體逐韌$ 少的過程，間歇地供給QFs氣體U #=體=減 動會 S 問 引進，t^44 Λ二钮刻程序時’隨著从氣體的 i 向頻電源RF2輸出的高頻電力的 反射波的“電壓，將其值回饋至整 敕人说 42根據回饋值調節阻隔電容器的容量來供給 17 201209913 力’但在其阻隔電容ϋ的容量結束時，相較於 波檢測時，sf6氣體會大幅減少。因此，在各時間點 需要的匹配點，會變成在完全不同的匹配點供給高頻電 力。其結果，被供給的高頻電力變得不安定， 也變成不能安定產生。 水 對此，如本實施形態，當間歇地供給q匕氣沪 真空槽10，則從檢測器44到整合箱42的回7 ^处 追隨間歇的C4F8氣體的供給，所以匹配不能追上，2 隔電容器的容量不會大幅變化。因此，雖然匹配點會 二些偏，，但相較於持續供給CJ8氣體的狀況‘·'，‘漿 容易穩定。又，在本實施形態，支配真空槽1G内的阻 抗的Ar氣體，以固定的引進量持續地被供給。因此， 即使使QF8氣體間歇地供給，真空槽1〇内的&氣俨 ^會幾乎固定’所以需要的匹配點在C4f8氣體的供= 月|J後不會有大幅變動。因此，可以達成電漿的安定化。 一當第二蝕刻程序結束（時間t5)，如第二（c)圖所 ，，保濩膜57被形成在凹部55。然後在時間t5，沈積 氣體供給閥27變成閉狀態，蝕刻氣體供給閥24變^開 狀態，第一蝕刻程序又被重複進行（時間t5〜時間P)。 ，時’如第二（d)圖所示，凹部55的内面所形成的保 護，ί7再被蝕刻，但在凹部55的底面正離子的入射效 率麦兩在凹部5 5的側面正離子的入射效率變低。、咬 者是，在凹部55的底面，蝕刻耐性高，或具有厚膜^ 保護膜57被形成，在凹部55的側面，蝕刻耐性低，、或 八有4膜厚的保護膜57被形成。因此，在底面所形成 201209913 的保護膜57變成首先被除去， 57變得容易被殘留。在凹部55的^所形成的保護膜 刻再次進行，在保護臈57被形的柄矽層52的蝕 刻被抑制。藉此，如第二（d)所1面，矽層52的蝕 序所形成的凹部55的側面被餘刻程 57下方的料52,異向性以：比保護膜 行，在厚度方向以及面方向凹部55^；=性㈣會進 =氣體供給閥 ，氣體被間歇地供給至真空槽1〇内：:皮二欠重複， 刻程序結束，第二蝕刻程序再次 =後§弟一蝕 供給的閥24變成閉狀態。 仃，控制SF6氣體 這樣一來，藉由特定次數重葙 — 二蝕刻程序，如第二(e)圖所 ：=J第 向貫穿’形成有其底部到達層間絕緣膜？方 二如上述’在形成貫穿孔58的_，藉由 抑制石夕居a # a l 稍'田保5蔓膜57 4蝕刻，所以可獲得異向性蝕刻的 ^ /、後，被層疊在矽層52的罩53，盘殘存/二办 此’在本實施形態，因為在形成保護膜57 a丰谁 刻，所以即使以一次塗佈的罩53二3 ί:Γ丈貫穿孔58。因此，即使在用多層配線結構的 土 、 ^ 开>成矽穿孔（through-silicon via)的狀、.牙， 也可以提料遮罩Wit擇比。 ' 19 201209913 根據上述實施形態’可以得到如以下效果。 (1)在上述實施形態的乾蝕刻方法，蝕刻基板Sb 的程序，具有：第一蝕刻程序，將SF6組成的蝕刻氣體 引進至真空槽1 〇内，將钱刻氣體電漿化，將凹部y形 成在基板Sb。又，具有第二钱刻程序，邊使在真空槽 10内存在的敍刻氣體持續減少，邊將沈積氣體供給至 真空，10内，藉由電漿化的蝕刻氣體，使凹部55、5蝕 刻進竹·，並藉由電漿化的沈積氣體在凹部55的内表面 56形成保護膜57。藉由在凹部55的内表面56所形成 的保護膜57，抑制等向性|虫刻進行，可以進行異向性 蝕刻。又，在第二|虫刻程序，形成保護膜57的同時， ，刻緩慢地被進行。就第一以及第二蝕刻程序整體來 说，蝕刻速度以及選擇比提升，可以提高生產性。 /2)在上述實施形態，用CfFs組成的沈積氣體， 夺此沈積氣體間歇地供給至真空槽1〇内。因此，因稀 =氣體導致沈積氣體的稀釋率被提高，所以可以形成富 ^的4強固保護膜57。又，藉由提高沈積氣體的稀釋率， 鲧=η ί空槽1〇内的沈積氣體變成保護膜57前， 读地將=-。目此’抑制貢獻在钮刻的氟基，可以快 速地將沈積氣體做為保護膜57。 44，上述實施形態，藉由整合箱42以及檢測器 肉心:同頻電力供給至天線41的高頻電源rf2的 人:包含真空槽10内的電襞的負載阻抗的整 ° 蝕刻程序以及第二蝕刻程序，固定地供 ’·° U —至真空槽10内。因此，即使間歇地供給沈積 20 201209913 氣體，藉由固定地供給主要支配阻抗的Ar氣體，可以 抑制包含真空槽10的負載阻抗的大變動。因此，由於 可以抑制匹配點的大變動，所以可以安定化電漿。 (4)在上述實施形態，在第二蝕刻程序時，將來 自蝕刻氣體供給源18的蝕刻氣體的供給，藉由該蝕刻 氣體供給源18與真空槽10之間所設有的蝕刻氣體供給 閥24給停止。在比此閥24下游的第二供給管23以及 氣體供給管15所殘留的蝕刻氣體，藉由真空槽10内的 負壓，以引進真空槽10内來供給。如此，用來使蝕刻 氣體持續地減少的氣體流量控制器所導致的流量控制 或特殊的流量控制機構等不被需要，所以可以抑制程序 以及裝置的複雜化。 又，本實施形態也可如下變更。 在上述實施形態，將蝕刻裝置1具體化成NLD電 漿裝置，但並不限於此型的蝕刻裝置，也可以具體化成 其他蝕刻裝置。重要的是將蝕刻氣體電漿化來進行蝕 刻，並藉由沈積氣體可形成保護膜的裝置即可，也可以 是電容柄合型钱刻裝置、感應搞合型餘刻裝置等。 在上述實施形態，藉由蝕刻氣體供給閥24變成閉 狀態，進行第二蝕刻程序，但也可以藉由氣體流量控制 器25將流量逐漸減少，使真空槽10内的蝕刻氣體持續 地減少。 在上述實施形態，間歇地供給沈積氣體至真空槽 10内，但也可以藉由氣體流量控制器28將流量逐漸變 多〇 201209913 #上㈣態，將保護膜57形成在凹部55的内 整沈積氣體以及崎體的 真二槽10内的軋體量等，藉由第二蝕 去底=之保，57 ’僅在凹部55的側面形成保護膜^ 則二形f:僅藉由閥24成為閉狀態， =體持續減少，但也可以在第二供給管23設有容易 殘邊蝕刻氣體的結構的緩衝器。 ^洲“或長度)也可以變得比其他供:上 更大。如此則由於蝕刻氣體的殘留量變多，所以在第二 姓刻程序更可以使蝕刻進行。 一 在上述實卿態’在朗氣體供關24做為閉狀 則供給沈積氣體’但也可以在钱刻氣體供給閥24做 為閉狀態後供給沈積氣體。 上述蝕刻方法，可以做為程式碼儲存在電腦可讀取 的記錄媒體。 上述蝕刻方法，可以藉由控制裝置自動地實施。此 控制裝置，可以根據移入到記憶體的程式碼來控制閥 21、24、27、29。 【圖式簡單說明】 第一圖：I虫刻裝置的概略圖。 第二圖：（a)基板的概略部分剖面圖，（b)〜（f)蝕 刻中的基板的概略部分剖面圖。 第三圖：用來說明触刻方法的時序圖。 22 201209913 【主要元件符號說明】 1 1虫刻裝置 10 真空槽 10a 側壁部 10b 排氣部 10d 氣體供給部 10f 上壁部 11 平台 12、 42 整合箱 15 氣體供給管 16 氣體供給機構 17 稀釋氣體供給源 18 蝕刻氣體供給源 19 沈積氣體供給源 20 第一供給管 21 稀釋氣體供給閥 22 第一氣體流量控制器 23 第二供給管 24 蝕刻氣體供給閥 25 第二氣體流量控制器 26 第三供給管 27 沈積氣體供給閥 28 第三氣體流量控制器 29 閥 41 天線 201209913 43 磁線圈群 43 a〜43 c 磁線圈 44 檢測器 51 層間絕緣膜 52 矽層 53 罩 54 開口部 55 凹部 56 内表面 57 保護膜 58 貫穿孔 NL 磁中性環路 RF1 第一而頻電源 RF2 第二南頻電源 Sb ^夕基板 24On the other hand, from the start time t1 to the specific time, when the supply of the deposition gas is applied, the first-time program ends the second (10) procedure. Moreover, the first-(fourth) procedure is to etch the 6th line of the Shishi layer by a relatively high speed of the ^^ body: the ίif side is etched at a slower speed than the first etching procedure: The other procedure of the protective film 57 is not (10) the number of times, if it is detailed, in the second_procedure, first, the third (a) = total width is changed to a closed state. Thus, the SF6 is stopped from the meal. While the gas is supplied, the *SF6 gas remains from the valve 24 to the downstream pipe 23, and the % gas remains in the mixed gas of the Ar gas and the SF6 gas remaining below the second supply pipe 23. Compared with the flow path of the gas, the downstream pipe of the supply valve 24 is shorter than the flow path of the deposition gas supply valve, and the length of the downstream pipe of the supply valve 24 is shorter, and the SF6 gas supply 1 of the supply port and the gas supply pipe 15 is self-contained. (4) The positive pressure of the gas supply source 18 is not applied, and the negative pressure of the vacuum chamber 1〇 which is decompressed and decompressed is attracted to the vacuum chamber 201209913; =° sf6 in the vacuum chamber 10 as shown in the third (b) diagram In the gas also 』=下: by: ί holding the ground, slowly reducing ',. b Residual sf6 gas, and in the gas supply pipe, even if the valve 24 is closed, it is also a gas residue. Therefore, the c4f8 gas leads to the protection of the 6 membranes 5 Ν = is carried out: the sea is also better than the first, the procedure _ i less due to slowing into the sputum, its _ speed gradually decreases = : degrees when Si:, gas ... = SF; The measurement is performed as the necessary thickness of the protective film 57: in the hawthorn state, the inner surface 56 of the pre-recessed portion 55 is two-folded: the object is deposited in the second two-second time downstream of the white valve 24 to come out. In addition, the following conditions are adjusted: • In advance; / In the first::: The length of the road is in accordance with the range of the protective film. When the gas may be in a closed state, the gas # body is the largest one, and the valve 24 is the second. Tube 2 two large ^ ^ ^ ^ yang gas amount S: Γ time t3 (the first axis program), 6 milk 疋 first rhyme gas amount Ef, relatively more time, the door will be produced within the area The fluorine base is mainly used to carry out the surface engraving of the substrate Sb. Then, the water 12 starts to protect the formation time of the crucible 12, and when the second money engraving process is started, the film formation speed of the concavity film 57 becomes low. After that, s starts the second narration procedure (time t3), and since the heart rate 201209913 continues to decrease, the LV buckle changes, the protective film also decreases, the etching speed decreases, and the film formation speed becomes larger. The direction change. n, at the end (time (1), protects the film formation rate, in the second eclipse, the protective film is formed into the main body. By the first - the program ^η stays the film 57 is formed, from the The concave portion 55 is formed and further increased in depth by 1 recess = 5 = 55 ', and the protective surface 57 is formed on the inner surface of the second rice cut. , the increase in the depth of the recess 55 in the first: 刻 库 库 , , , , , 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但'Second emulsion supply valve 27 is opened (1). The state becomes closed (when it is slow but in order to actively and in combination with the deposition gas, the timing of opening the valve 27 is two: and the second is limited to this) The timing of closing the valve 24 is simultaneously. In the present embodiment, the QFs gas is intermittently supplied in the process of reducing the SF6 gas toughness. U #=body=reduction will be asked to introduce, t^44 Λ In the two-button program, the voltage of the reflected wave of the high-frequency power output from the gas i to the frequency power source RF2 is fed back to the whole person. 42 is adjusted according to the feedback value to adjust the capacity of the blocking capacitor. 17 201209913 Force 'but at the end of the capacity of the blocking capacitor ,, the sf6 gas is greatly reduced compared to the wave detection. Therefore, the matching points required at each time point become high-frequency power at completely different matching points. As a result, the supplied high frequency electricity When it becomes unstable, it becomes unsettled. As a result of this, when the q 匕 沪 真空 真空 vacuum tank 10 is intermittently supplied, the intermittent C4F8 is followed from the detector 44 to the back box 4 of the integration box 42. Since the supply of gas is not matched, the capacity of the 2 capacitors does not change greatly. Therefore, although the matching points are slightly different, the slurry is more stable than the condition of continuously supplying the CJ8 gas. Further, in the present embodiment, the Ar gas that controls the impedance in the vacuum chamber 1G is continuously supplied at a constant introduction amount. Therefore, even if the QF8 gas is intermittently supplied, the & gas in the vacuum chamber 1〇 Almost fixed 'so the matching points needed will not change significantly after the C4f8 gas supply = month | J. Therefore, the stabilization of the plasma can be achieved. Once the second etching process is finished (time t5), as in the second (c) diagram, the relief film 57 is formed in the recess 55. Then, at time t5, the deposition gas supply valve 27 is brought into a closed state, the etching gas supply valve 24 is opened, and the first etching process is repeated (time t5 to time P). , as shown in the second (d) diagram, the protection formed by the inner surface of the concave portion 55, ί7 is etched again, but the incident efficiency of the positive ions on the bottom surface of the concave portion 55 is incident on the side of the concave portion 55. The efficiency is low. In the bottom surface of the concave portion 55, the etching resistance is high, or the thick film protective film 57 is formed, and the etching resistance is low on the side surface of the concave portion 55, or the protective film 57 having a thickness of four is formed. Therefore, the protective film 57 of 201209913 formed on the bottom surface is first removed, and 57 becomes easily left. The protective film formed in the concave portion 55 is again performed, and the etching of the handle layer 52 in which the protective crucible 57 is formed is suppressed. Thereby, as shown in the second surface (d), the side surface of the concave portion 55 formed by the etching of the ruthenium layer 52 is surrounded by the material 52 under the remaining step 57, and the anisotropy is: in the thickness direction as compared with the protective film row and Face direction concave portion 55^; = (4) will enter = gas supply valve, gas is intermittently supplied to the vacuum chamber 1〇:: the skin is under repeated, the end of the program is finished, the second etching process is again = after the § 一 蚀 supply The valve 24 is in a closed state.仃, control of the SF6 gas, by a specific number of times 葙 - two etching procedures, as shown in the second (e) figure: = J direction through the formation of its bottom to reach the interlayer insulation film? As shown in the above section, the _ in the formation of the through-holes 58 is etched by suppressing the shi shi shi a # al 细 '田保 5 vine film 57 4 , so that the anisotropic etching can be obtained, and then laminated on the 矽In the present embodiment, the cover 53 of the layer 52 is left in the disk. Therefore, even if the soil of the multilayer wiring structure, the opening, the through-silicon via, or the teeth, the Wit ratio can be extracted. According to the above embodiment, '19 201209913' has the following effects. (1) In the dry etching method according to the above embodiment, the program for etching the substrate Sb has a first etching process, and an etching gas having an SF6 composition is introduced into the vacuum chamber 1 to pulverize the gas, and the concave portion is y. Formed on the substrate Sb. Further, there is a second money engraving program for supplying the deposition gas to the vacuum while the deposition gas is continuously reduced in the vacuum chamber 10, and etching the concave portions 55, 5 by the plasma etching gas. The protective film 57 is formed on the inner surface 56 of the recess 55 by the plasma deposition gas. The isotropic etching is suppressed by the protective film 57 formed on the inner surface 56 of the concave portion 55, and the anisotropic etching can be performed. Further, at the same time as the second etching process, the protective film 57 is formed, and the etching is performed slowly. As for the first and second etching processes as a whole, the etching speed and the selection ratio are improved, and productivity can be improved. /2) In the above embodiment, the deposition gas composed of CfFs is intermittently supplied to the vacuum chamber 1〇. Therefore, since the dilution rate of the deposition gas is increased due to the lean gas, a rich 4 strong protective film 57 can be formed. Further, by increasing the dilution rate of the deposition gas, before the deposition gas in the 鲧 = η 空 empty space 1 becomes the protective film 57, the reading will be =-. Thus, by suppressing the fluorine group contributing to the button, the deposition gas can be quickly used as the protective film 57. 44. In the above embodiment, the integration box 42 and the sensor core: the person who supplies the high frequency power supply rf2 of the antenna 41 with the same frequency power: the etch process including the load impedance of the power supply in the vacuum chamber 10 and the The second etching process is fixedly supplied with '·° U — into the vacuum chamber 10. Therefore, even if the deposition 20 201209913 gas is intermittently supplied, by uniformly supplying the Ar gas which mainly controls the impedance, it is possible to suppress a large variation in the load impedance including the vacuum chamber 10. Therefore, since the large variation of the matching point can be suppressed, the plasma can be stabilized. (4) In the above embodiment, the etching gas supply from the etching gas supply source 18 is supplied by the etching gas supply source 18 and the etching gas supply valve provided between the vacuum chamber 10 in the second etching process. 24 to stop. The etching gas remaining in the second supply pipe 23 and the gas supply pipe 15 downstream of the valve 24 is supplied into the vacuum chamber 10 by the negative pressure in the vacuum chamber 10. Thus, flow control or a special flow control mechanism or the like caused by the gas flow controller for continuously reducing the etching gas is not required, so that the complexity of the program and the apparatus can be suppressed. Further, the present embodiment can be modified as follows. In the above embodiment, the etching apparatus 1 is embodied as an NLD plasma apparatus. However, the etching apparatus 1 is not limited to this type of etching apparatus, and may be embodied as another etching apparatus. It is important to etch the etching gas for etching, and to form a protective film by depositing a gas, or a capacitor shank type engraving device or an induction bonding device. In the above embodiment, the etching process is performed by the etching gas supply valve 24, and the second etching process is performed. However, the flow rate can be gradually reduced by the gas flow rate controller 25, and the etching gas in the vacuum chamber 10 can be continuously reduced. In the above embodiment, the deposition gas is intermittently supplied into the vacuum chamber 10. However, the gas flow rate controller 28 may gradually increase the flow rate by the 201209913 #上(四) state, and the protective film 57 is formed in the concave portion 55. The gas and the amount of the rolled body in the so-called true two-slot 10 are protected by the second etch-off, 57' only forms a protective film on the side surface of the concave portion 55. Then the shape f: only by the valve 24 In the closed state, the body is continuously reduced, but the second supply pipe 23 may be provided with a damper having a structure in which the etching gas is easily left. ^洲" or length" can also be made larger than the other:. Therefore, since the residual amount of etching gas is increased, the etching process can be performed in the second surname program. The gas supply shutoff 24 is supplied as a closed gas to supply a deposition gas. However, it is also possible to supply a deposition gas after the gas supply valve 24 is in a closed state. The above etching method can be stored as a code on a computer-readable recording medium. The above etching method can be automatically implemented by a control device which can control the valves 21, 24, 27, 29 according to the code transferred into the memory. [Simplified illustration] First figure: I worm FIG. 2 is a cross-sectional view showing a schematic portion of the substrate, and (b) to (f) a schematic partial cross-sectional view of the substrate during etching. FIG. 3 is a timing chart for explaining the etching method. 22 201209913 [Description of main components] 1 1 Insect device 10 Vacuum chamber 10a Side wall portion 10b Exhaust portion 10d Gas supply portion 10f Upper wall portion 11 Platform 12, 42 Integrated box 15 Gas supply tube 16 Gas Feeding mechanism 17 dilution gas supply source 18 etching gas supply source 19 deposition gas supply source 20 first supply pipe 21 dilution gas supply valve 22 first gas flow controller 23 second supply pipe 24 etching gas supply valve 25 second gas flow control Second supply pipe 27 third supply pipe 27 deposition gas supply valve 28 third gas flow controller 29 valve 41 antenna 201209913 43 magnetic coil group 43 a to 43 c magnetic coil 44 detector 51 interlayer insulating film 52 矽 layer 53 cover 54 opening portion 55 Concave portion 56 inner surface 57 protective film 58 through hole NL magnetic neutral loop RF1 first frequency power supply RF2 second south frequency power supply Sb