TW201205797A - Solid-state imaging device - Google Patents
Solid-state imaging device Download PDFInfo
- Publication number
- TW201205797A TW201205797A TW100125047A TW100125047A TW201205797A TW 201205797 A TW201205797 A TW 201205797A TW 100125047 A TW100125047 A TW 100125047A TW 100125047 A TW100125047 A TW 100125047A TW 201205797 A TW201205797 A TW 201205797A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor region
- region
- semiconductor
- pixel
- signal
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title claims description 76
- 239000004065 semiconductor Substances 0.000 claims abstract description 444
- 239000004020 conductor Substances 0.000 claims description 77
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 210000000746 body region Anatomy 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 5
- 238000003860 storage Methods 0.000 description 35
- 230000009471 action Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000003574 free electron Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 210000004508 polar body Anatomy 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 101100447646 Caenorhabditis elegans gars-1 gene Proteins 0.000 description 2
- 101000712600 Homo sapiens Thyroid hormone receptor beta Proteins 0.000 description 2
- 102100033451 Thyroid hormone receptor beta Human genes 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- YREOLPGEVLLKMB-UHFFFAOYSA-N 3-methylpyridin-1-ium-2-amine bromide hydrate Chemical compound O.[Br-].Cc1ccc[nH+]c1N YREOLPGEVLLKMB-UHFFFAOYSA-N 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- SZVJSHCCFOBDDC-UHFFFAOYSA-N iron(II,III) oxide Inorganic materials O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- APTZNLHMIGJTEW-UHFFFAOYSA-N pyraflufen-ethyl Chemical compound C1=C(Cl)C(OCC(=O)OCC)=CC(C=2C(=C(OC(F)F)N(C)N=2)Cl)=C1F APTZNLHMIGJTEW-UHFFFAOYSA-N 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010173003 | 2010-07-30 | ||
| JP2010276403A JP5054183B2 (ja) | 2010-07-30 | 2010-12-10 | 固体撮像装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201205797A true TW201205797A (en) | 2012-02-01 |
Family
ID=45904349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100125047A TW201205797A (en) | 2010-07-30 | 2011-07-15 | Solid-state imaging device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5054183B2 (ko) |
| KR (1) | KR101255457B1 (ko) |
| TW (1) | TW201205797A (ko) |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02224481A (ja) * | 1989-02-27 | 1990-09-06 | Hitachi Ltd | 増幅型固体撮像素子 |
| JPH04154167A (ja) * | 1990-10-18 | 1992-05-27 | Fuji Xerox Co Ltd | 半導体装置 |
| JPH0685226A (ja) * | 1992-09-07 | 1994-03-25 | Nec Corp | 接合電界効果型固体撮像装置 |
| JP3008163B2 (ja) * | 1995-08-24 | 2000-02-14 | エルジイ・セミコン・カンパニイ・リミテッド | 固体撮像素子及びその製造方法 |
| JPH09246514A (ja) * | 1996-03-12 | 1997-09-19 | Sharp Corp | 増幅型固体撮像装置 |
| JP3915161B2 (ja) * | 1997-03-04 | 2007-05-16 | ソニー株式会社 | ブルーミング防止構造を備えた固体撮像素子のダイナミックレンジ拡大方法とその固体撮像素子 |
| JP4218894B2 (ja) | 2004-07-08 | 2009-02-04 | シャープ株式会社 | 固体撮像装置およびその製造方法 |
| JP2007134562A (ja) | 2005-11-11 | 2007-05-31 | Sharp Corp | 固体撮像装置およびそれの製造方法 |
| CN101855725B (zh) * | 2007-09-12 | 2013-08-21 | 新加坡优尼山帝斯电子私人有限公司 | 固态摄像组件 |
| JP2009188316A (ja) * | 2008-02-08 | 2009-08-20 | Denso Corp | 受光素子 |
-
2010
- 2010-12-10 JP JP2010276403A patent/JP5054183B2/ja active Active
-
2011
- 2011-06-30 KR KR1020110064185A patent/KR101255457B1/ko active IP Right Grant
- 2011-07-15 TW TW100125047A patent/TW201205797A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP5054183B2 (ja) | 2012-10-24 |
| JP2012050055A (ja) | 2012-03-08 |
| KR101255457B1 (ko) | 2013-04-17 |
| KR20120022545A (ko) | 2012-03-12 |
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