TW201203268A - Data recovery for non-volatile memory based on count of data state-specific fails - Google Patents
Data recovery for non-volatile memory based on count of data state-specific fails Download PDFInfo
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- TW201203268A TW201203268A TW100102514A TW100102514A TW201203268A TW 201203268 A TW201203268 A TW 201203268A TW 100102514 A TW100102514 A TW 100102514A TW 100102514 A TW100102514 A TW 100102514A TW 201203268 A TW201203268 A TW 201203268A
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- 230000015654 memory Effects 0.000 title claims abstract description 58
- 238000011084 recovery Methods 0.000 title abstract description 18
- 238000003860 storage Methods 0.000 claims abstract description 350
- 238000000034 method Methods 0.000 claims description 57
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5621—Multilevel programming verification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/695,918 US8248850B2 (en) | 2010-01-28 | 2010-01-28 | Data recovery for non-volatile memory based on count of data state-specific fails |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201203268A true TW201203268A (en) | 2012-01-16 |
Family
ID=43735965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100102514A TW201203268A (en) | 2010-01-28 | 2011-01-24 | Data recovery for non-volatile memory based on count of data state-specific fails |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8248850B2 (enExample) |
| EP (1) | EP2529375B1 (enExample) |
| JP (1) | JP5735543B2 (enExample) |
| KR (1) | KR101854927B1 (enExample) |
| CN (1) | CN102754165B (enExample) |
| TW (1) | TW201203268A (enExample) |
| WO (1) | WO2011094419A1 (enExample) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8645792B2 (en) * | 2008-12-16 | 2014-02-04 | Micron Technology, Inc. | Memory with guard value dependent error correction |
| US8213243B2 (en) | 2009-12-15 | 2012-07-03 | Sandisk 3D Llc | Program cycle skip |
| US8116139B2 (en) * | 2010-01-29 | 2012-02-14 | Sandisk Technologies Inc. | Bit line stability detection |
| US8503238B1 (en) * | 2010-07-21 | 2013-08-06 | Sk Hynix Memory Solutions Inc. | Error recovery for flash memory |
| KR20120109848A (ko) * | 2011-03-28 | 2012-10-09 | 에스케이하이닉스 주식회사 | 반도체 메모리 시스템 및 그의 데이터 리드 방법 |
| US8775901B2 (en) | 2011-07-28 | 2014-07-08 | SanDisk Technologies, Inc. | Data recovery for defective word lines during programming of non-volatile memory arrays |
| US8750042B2 (en) | 2011-07-28 | 2014-06-10 | Sandisk Technologies Inc. | Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures |
| US8630118B2 (en) | 2011-11-09 | 2014-01-14 | Sandisk Technologies Inc. | Defective word line detection |
| US8842476B2 (en) | 2011-11-09 | 2014-09-23 | Sandisk Technologies Inc. | Erratic program detection for non-volatile storage |
| US8730722B2 (en) | 2012-03-02 | 2014-05-20 | Sandisk Technologies Inc. | Saving of data in cases of word-line to word-line short in memory arrays |
| KR101996004B1 (ko) * | 2012-05-29 | 2019-07-03 | 삼성전자주식회사 | 비휘발성 메모리 장치의 프로그램 방법 및 그것의 메모리 시스템 |
| US9135989B2 (en) | 2012-09-06 | 2015-09-15 | Sandisk Technologies Inc. | Write data preservation for non-volatile storage |
| US20140198576A1 (en) * | 2013-01-16 | 2014-07-17 | Macronix International Co, Ltd. | Programming technique for reducing program disturb in stacked memory structures |
| US8913428B2 (en) * | 2013-01-25 | 2014-12-16 | Sandisk Technologies Inc. | Programming non-volatile storage system with multiple memory die |
| US9053810B2 (en) * | 2013-03-08 | 2015-06-09 | Sandisk Technologies Inc. | Defect or program disturb detection with full data recovery capability |
| US20140359202A1 (en) * | 2013-05-31 | 2014-12-04 | Western Digital Technologies, Inc. | Reading voltage calculation in solid-state storage devices |
| KR102163872B1 (ko) | 2013-08-09 | 2020-10-13 | 삼성전자 주식회사 | 멀티 비트 메모리 장치, 그것의 온칩 버퍼 프로그램 방법 및 멀티 비트 메모리 시스템 |
| US9165683B2 (en) | 2013-09-23 | 2015-10-20 | Sandisk Technologies Inc. | Multi-word line erratic programming detection |
| US8908441B1 (en) * | 2013-10-15 | 2014-12-09 | Sandisk Technologies Inc. | Double verify method in multi-pass programming to suppress read noise |
| US9230689B2 (en) * | 2014-03-17 | 2016-01-05 | Sandisk Technologies Inc. | Finding read disturbs on non-volatile memories |
| US8819337B1 (en) | 2014-04-16 | 2014-08-26 | Sandisk Technologies Inc. | Storage module and method for determining whether to back-up a previously-written lower page of data before writing an upper page of data |
| US9443612B2 (en) | 2014-07-10 | 2016-09-13 | Sandisk Technologies Llc | Determination of bit line to low voltage signal shorts |
| US9460809B2 (en) | 2014-07-10 | 2016-10-04 | Sandisk Technologies Llc | AC stress mode to screen out word line to word line shorts |
| US9514835B2 (en) | 2014-07-10 | 2016-12-06 | Sandisk Technologies Llc | Determination of word line to word line shorts between adjacent blocks |
| US9484086B2 (en) | 2014-07-10 | 2016-11-01 | Sandisk Technologies Llc | Determination of word line to local source line shorts |
| US9240249B1 (en) | 2014-09-02 | 2016-01-19 | Sandisk Technologies Inc. | AC stress methods to screen out bit line defects |
| US9202593B1 (en) | 2014-09-02 | 2015-12-01 | Sandisk Technologies Inc. | Techniques for detecting broken word lines in non-volatile memories |
| US9449694B2 (en) | 2014-09-04 | 2016-09-20 | Sandisk Technologies Llc | Non-volatile memory with multi-word line select for defect detection operations |
| KR102290448B1 (ko) | 2014-09-04 | 2021-08-19 | 삼성전자주식회사 | 불휘발성 메모리 및 불휘발성 메모리의 동작 방법 |
| US9659666B2 (en) | 2015-08-31 | 2017-05-23 | Sandisk Technologies Llc | Dynamic memory recovery at the sub-block level |
| US9548124B1 (en) | 2015-10-14 | 2017-01-17 | Sandisk Technologies Llc | Word line dependent programming in a memory device |
| US9460799B1 (en) * | 2015-11-24 | 2016-10-04 | Sandisk Technologies Llc | Recovery of partially programmed block in non-volatile memory |
| KR20180025357A (ko) * | 2016-08-29 | 2018-03-09 | 에스케이하이닉스 주식회사 | 데이터 저장 장치 및 그것의 동작 방법 |
| US10580495B2 (en) * | 2017-12-21 | 2020-03-03 | Western Digital Technologies, Inc. | Partial program operation of memory wordline |
| US11068186B2 (en) * | 2018-02-09 | 2021-07-20 | Micron Technology, Inc. | Providing recovered data to a new memory cell at a memory sub-system based on an unsuccessful error correction operation |
| CN110471788B (zh) * | 2018-05-08 | 2024-03-15 | 美光科技公司 | 异步功率损耗影响的数据结构 |
| US10541038B2 (en) * | 2018-06-12 | 2020-01-21 | Sandisk Technologies Llc | Subgroup selection for verification |
| EP3867905A4 (en) | 2018-12-10 | 2022-05-18 | Yangtze Memory Technologies Co., Ltd. | PRE-READING TECHNIQUE FOR MULTI-PASS FLASH MEMORY PROGRAMMING |
| US11061762B2 (en) * | 2019-02-04 | 2021-07-13 | Intel Corporation | Memory programming techniques |
| US12462886B2 (en) | 2019-02-20 | 2025-11-04 | Yangtze Memory Technologies Co., Ltd. | Method for programming a memory device to reduce retention error |
| KR20210066899A (ko) | 2019-02-20 | 2021-06-07 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 메모리 시스템을 프로그래밍하기 위한 방법 |
| CN110531937B (zh) * | 2019-08-30 | 2023-01-06 | 四川效率源信息安全技术股份有限公司 | 一种针对主控芯片的数据重组方法 |
| JP7186892B2 (ja) * | 2020-02-20 | 2022-12-09 | 長江存儲科技有限責任公司 | マルチプレーンメモリデバイスをプログラミングする方法 |
| CN113821156A (zh) * | 2020-06-18 | 2021-12-21 | 桑迪士克科技有限责任公司 | 前瞻识别潜在不可校正的误差校正存储器单元和现场对策 |
| KR102789969B1 (ko) * | 2020-06-29 | 2025-04-03 | 에스케이하이닉스 주식회사 | 메모리 시스템, 메모리 장치 및 메모리 장치의 동작 방법 |
| US11455210B1 (en) * | 2021-04-26 | 2022-09-27 | Micron Technology, Inc. | Error detection and correction in memory |
| US11894062B2 (en) | 2021-08-10 | 2024-02-06 | Sandisk Technologies Llc | Semi-circle drain side select gate maintenance by selective semi-circle dummy word line program |
| CN114356221B (zh) * | 2021-12-07 | 2023-10-20 | 广州致存科技有限责任公司 | 数据写入方法、存储设备和存储介质 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4090570B2 (ja) * | 1998-06-02 | 2008-05-28 | 株式会社ルネサステクノロジ | 半導体装置、データ処理システム及び不揮発性メモリセルの閾値変更方法 |
| JP2002197878A (ja) * | 2000-12-26 | 2002-07-12 | Hitachi Ltd | 半導体装置及びデータ処理システム |
| JP3875570B2 (ja) * | 2001-02-20 | 2007-01-31 | 株式会社東芝 | 半導体記憶装置のデータ書き込み方法及び半導体記憶装置 |
| US7392436B2 (en) * | 2003-05-08 | 2008-06-24 | Micron Technology, Inc. | Program failure recovery |
| JP2005353242A (ja) * | 2004-06-14 | 2005-12-22 | Toshiba Corp | 不揮発性半導体記憶装置及びそのデータ書き込み方法 |
| JP4410188B2 (ja) * | 2004-11-12 | 2010-02-03 | 株式会社東芝 | 半導体記憶装置のデータ書き込み方法 |
| US7420847B2 (en) * | 2004-12-14 | 2008-09-02 | Sandisk Corporation | Multi-state memory having data recovery after program fail |
| US7120051B2 (en) * | 2004-12-14 | 2006-10-10 | Sandisk Corporation | Pipelined programming of non-volatile memories using early data |
| US7158416B2 (en) * | 2005-03-15 | 2007-01-02 | Infineon Technologies Flash Gmbh & Co. Kg | Method for operating a flash memory device |
| US7206230B2 (en) * | 2005-04-01 | 2007-04-17 | Sandisk Corporation | Use of data latches in cache operations of non-volatile memories |
| US7307887B2 (en) * | 2005-12-29 | 2007-12-11 | Sandisk Corporation | Continued verification in non-volatile memory write operations |
| ATE500591T1 (de) * | 2005-12-29 | 2011-03-15 | Sandisk Corp | Fortgesetzte verifikation bei schreiboperationen in nichtflüchtigen speicher |
| US7400532B2 (en) * | 2006-02-16 | 2008-07-15 | Micron Technology, Inc. | Programming method to reduce gate coupling interference for non-volatile memory |
| JP5142478B2 (ja) * | 2006-04-13 | 2013-02-13 | 株式会社東芝 | 半導体記憶装置 |
-
2010
- 2010-01-28 US US12/695,918 patent/US8248850B2/en not_active Expired - Fee Related
-
2011
- 2011-01-24 TW TW100102514A patent/TW201203268A/zh unknown
- 2011-01-27 KR KR1020127022306A patent/KR101854927B1/ko active Active
- 2011-01-27 EP EP11703775.4A patent/EP2529375B1/en not_active Not-in-force
- 2011-01-27 WO PCT/US2011/022736 patent/WO2011094419A1/en not_active Ceased
- 2011-01-27 JP JP2012551286A patent/JP5735543B2/ja active Active
- 2011-01-27 CN CN201180007275.2A patent/CN102754165B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013518359A (ja) | 2013-05-20 |
| CN102754165A (zh) | 2012-10-24 |
| US20110182121A1 (en) | 2011-07-28 |
| KR20130009755A (ko) | 2013-01-23 |
| US8248850B2 (en) | 2012-08-21 |
| EP2529375A1 (en) | 2012-12-05 |
| JP5735543B2 (ja) | 2015-06-17 |
| KR101854927B1 (ko) | 2018-05-04 |
| EP2529375B1 (en) | 2016-11-02 |
| CN102754165B (zh) | 2015-04-15 |
| WO2011094419A1 (en) | 2011-08-04 |
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