JP5735543B2 - データ状態に固有の失敗の計数に基づく不揮発性メモリのデータ復旧 - Google Patents

データ状態に固有の失敗の計数に基づく不揮発性メモリのデータ復旧

Info

Publication number
JP5735543B2
JP5735543B2 JP2012551286A JP2012551286A JP5735543B2 JP 5735543 B2 JP5735543 B2 JP 5735543B2 JP 2012551286 A JP2012551286 A JP 2012551286A JP 2012551286 A JP2012551286 A JP 2012551286A JP 5735543 B2 JP5735543 B2 JP 5735543B2
Authority
JP
Japan
Prior art keywords
subset
data
state
storage elements
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012551286A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013518359A5 (enExample
JP2013518359A (ja
Inventor
ディーパンシュ ダッタ
ディーパンシュ ダッタ
ジェフリー ダブリュー． ルッツェ
ジェフリー ダブリュー． ルッツェ
リ ヤン
リ ヤン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Technologies LLC
Original Assignee
SanDisk Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Technologies LLC filed Critical SanDisk Technologies LLC
Publication of JP2013518359A publication Critical patent/JP2013518359A/ja
Publication of JP2013518359A5 publication Critical patent/JP2013518359A5/ja
Application granted granted Critical
Publication of JP5735543B2 publication Critical patent/JP5735543B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
JP2012551286A 2010-01-28 2011-01-27 データ状態に固有の失敗の計数に基づく不揮発性メモリのデータ復旧 Active JP5735543B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/695,918 2010-01-28
US12/695,918 US8248850B2 (en) 2010-01-28 2010-01-28 Data recovery for non-volatile memory based on count of data state-specific fails
PCT/US2011/022736 WO2011094419A1 (en) 2010-01-28 2011-01-27 Multibit programming method in a non-volatile memory allowing a number of data state - fails and data recovery method in case of programming fail

Publications (3)

Publication Number Publication Date
JP2013518359A JP2013518359A (ja) 2013-05-20
JP2013518359A5 JP2013518359A5 (enExample) 2014-02-27
JP5735543B2 true JP5735543B2 (ja) 2015-06-17

Family

ID=43735965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012551286A Active JP5735543B2 (ja) 2010-01-28 2011-01-27 データ状態に固有の失敗の計数に基づく不揮発性メモリのデータ復旧

Country Status (7)

Country Link
US (1) US8248850B2 (enExample)
EP (1) EP2529375B1 (enExample)
JP (1) JP5735543B2 (enExample)
KR (1) KR101854927B1 (enExample)
CN (1) CN102754165B (enExample)
TW (1) TW201203268A (enExample)
WO (1) WO2011094419A1 (enExample)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8645792B2 (en) * 2008-12-16 2014-02-04 Micron Technology, Inc. Memory with guard value dependent error correction
US8213243B2 (en) 2009-12-15 2012-07-03 Sandisk 3D Llc Program cycle skip
US8116139B2 (en) * 2010-01-29 2012-02-14 Sandisk Technologies Inc. Bit line stability detection
US8503238B1 (en) * 2010-07-21 2013-08-06 Sk Hynix Memory Solutions Inc. Error recovery for flash memory
KR20120109848A (ko) * 2011-03-28 2012-10-09 에스케이하이닉스 주식회사 반도체 메모리 시스템 및 그의 데이터 리드 방법
US8750042B2 (en) 2011-07-28 2014-06-10 Sandisk Technologies Inc. Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures
US8775901B2 (en) 2011-07-28 2014-07-08 SanDisk Technologies, Inc. Data recovery for defective word lines during programming of non-volatile memory arrays
US8842476B2 (en) 2011-11-09 2014-09-23 Sandisk Technologies Inc. Erratic program detection for non-volatile storage
US8630118B2 (en) 2011-11-09 2014-01-14 Sandisk Technologies Inc. Defective word line detection
US8730722B2 (en) * 2012-03-02 2014-05-20 Sandisk Technologies Inc. Saving of data in cases of word-line to word-line short in memory arrays
KR101996004B1 (ko) * 2012-05-29 2019-07-03 삼성전자주식회사 비휘발성 메모리 장치의 프로그램 방법 및 그것의 메모리 시스템
US9135989B2 (en) 2012-09-06 2015-09-15 Sandisk Technologies Inc. Write data preservation for non-volatile storage
US20140198576A1 (en) * 2013-01-16 2014-07-17 Macronix International Co, Ltd. Programming technique for reducing program disturb in stacked memory structures
US8913428B2 (en) * 2013-01-25 2014-12-16 Sandisk Technologies Inc. Programming non-volatile storage system with multiple memory die
US9053810B2 (en) * 2013-03-08 2015-06-09 Sandisk Technologies Inc. Defect or program disturb detection with full data recovery capability
US20140359202A1 (en) * 2013-05-31 2014-12-04 Western Digital Technologies, Inc. Reading voltage calculation in solid-state storage devices
KR102163872B1 (ko) 2013-08-09 2020-10-13 삼성전자 주식회사 멀티 비트 메모리 장치, 그것의 온칩 버퍼 프로그램 방법 및 멀티 비트 메모리 시스템
US9165683B2 (en) 2013-09-23 2015-10-20 Sandisk Technologies Inc. Multi-word line erratic programming detection
US8908441B1 (en) * 2013-10-15 2014-12-09 Sandisk Technologies Inc. Double verify method in multi-pass programming to suppress read noise
US9230689B2 (en) * 2014-03-17 2016-01-05 Sandisk Technologies Inc. Finding read disturbs on non-volatile memories
US8819337B1 (en) 2014-04-16 2014-08-26 Sandisk Technologies Inc. Storage module and method for determining whether to back-up a previously-written lower page of data before writing an upper page of data
US9443612B2 (en) 2014-07-10 2016-09-13 Sandisk Technologies Llc Determination of bit line to low voltage signal shorts
US9460809B2 (en) 2014-07-10 2016-10-04 Sandisk Technologies Llc AC stress mode to screen out word line to word line shorts
US9514835B2 (en) 2014-07-10 2016-12-06 Sandisk Technologies Llc Determination of word line to word line shorts between adjacent blocks
US9484086B2 (en) 2014-07-10 2016-11-01 Sandisk Technologies Llc Determination of word line to local source line shorts
US9240249B1 (en) 2014-09-02 2016-01-19 Sandisk Technologies Inc. AC stress methods to screen out bit line defects
US9202593B1 (en) 2014-09-02 2015-12-01 Sandisk Technologies Inc. Techniques for detecting broken word lines in non-volatile memories
US9449694B2 (en) 2014-09-04 2016-09-20 Sandisk Technologies Llc Non-volatile memory with multi-word line select for defect detection operations
KR102290448B1 (ko) 2014-09-04 2021-08-19 삼성전자주식회사 불휘발성 메모리 및 불휘발성 메모리의 동작 방법
US9659666B2 (en) 2015-08-31 2017-05-23 Sandisk Technologies Llc Dynamic memory recovery at the sub-block level
US9548124B1 (en) 2015-10-14 2017-01-17 Sandisk Technologies Llc Word line dependent programming in a memory device
US9460799B1 (en) * 2015-11-24 2016-10-04 Sandisk Technologies Llc Recovery of partially programmed block in non-volatile memory
KR20180025357A (ko) * 2016-08-29 2018-03-09 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
US10580495B2 (en) * 2017-12-21 2020-03-03 Western Digital Technologies, Inc. Partial program operation of memory wordline
US11068186B2 (en) * 2018-02-09 2021-07-20 Micron Technology, Inc. Providing recovered data to a new memory cell at a memory sub-system based on an unsuccessful error correction operation
US11275512B2 (en) * 2018-05-08 2022-03-15 Micron Technology, Inc. Asynchronous power loss impacted data structure
US10541038B2 (en) * 2018-06-12 2020-01-21 Sandisk Technologies Llc Subgroup selection for verification
WO2020118481A1 (en) * 2018-12-10 2020-06-18 Yangtze Memory Technologies Co., Ltd. Pre-read technique for multi-pass programming of flash memory
US11061762B2 (en) * 2019-02-04 2021-07-13 Intel Corporation Memory programming techniques
US12462886B2 (en) 2019-02-20 2025-11-04 Yangtze Memory Technologies Co., Ltd. Method for programming a memory device to reduce retention error
KR20210066899A (ko) * 2019-02-20 2021-06-07 양쯔 메모리 테크놀로지스 씨오., 엘티디. 메모리 시스템을 프로그래밍하기 위한 방법
CN110531937B (zh) * 2019-08-30 2023-01-06 四川效率源信息安全技术股份有限公司 一种针对主控芯片的数据重组方法
EP3899711B1 (en) * 2020-02-20 2024-02-07 Yangtze Memory Technologies Co., Ltd. Method of programming multi-plane memory device
CN113821156A (zh) * 2020-06-18 2021-12-21 桑迪士克科技有限责任公司 前瞻识别潜在不可校正的误差校正存储器单元和现场对策
KR102789969B1 (ko) * 2020-06-29 2025-04-03 에스케이하이닉스 주식회사 메모리 시스템, 메모리 장치 및 메모리 장치의 동작 방법
US11455210B1 (en) * 2021-04-26 2022-09-27 Micron Technology, Inc. Error detection and correction in memory
US11894062B2 (en) 2021-08-10 2024-02-06 Sandisk Technologies Llc Semi-circle drain side select gate maintenance by selective semi-circle dummy word line program
CN114356221B (zh) * 2021-12-07 2023-10-20 广州致存科技有限责任公司 数据写入方法、存储设备和存储介质

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4090570B2 (ja) * 1998-06-02 2008-05-28 株式会社ルネサステクノロジ 半導体装置、データ処理システム及び不揮発性メモリセルの閾値変更方法
JP2002197878A (ja) * 2000-12-26 2002-07-12 Hitachi Ltd 半導体装置及びデータ処理システム
JP3875570B2 (ja) * 2001-02-20 2007-01-31 株式会社東芝 半導体記憶装置のデータ書き込み方法及び半導体記憶装置
US7392436B2 (en) 2003-05-08 2008-06-24 Micron Technology, Inc. Program failure recovery
JP2005353242A (ja) * 2004-06-14 2005-12-22 Toshiba Corp 不揮発性半導体記憶装置及びそのデータ書き込み方法
JP4410188B2 (ja) * 2004-11-12 2010-02-03 株式会社東芝 半導体記憶装置のデータ書き込み方法
US7120051B2 (en) 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
US7420847B2 (en) 2004-12-14 2008-09-02 Sandisk Corporation Multi-state memory having data recovery after program fail
US7158416B2 (en) * 2005-03-15 2007-01-02 Infineon Technologies Flash Gmbh & Co. Kg Method for operating a flash memory device
US7206230B2 (en) 2005-04-01 2007-04-17 Sandisk Corporation Use of data latches in cache operations of non-volatile memories
JP2009522703A (ja) * 2005-12-29 2009-06-11 サンディスク コーポレイション 不揮発性メモリの書込動作における継続的な検証
US7307887B2 (en) 2005-12-29 2007-12-11 Sandisk Corporation Continued verification in non-volatile memory write operations
US7400532B2 (en) * 2006-02-16 2008-07-15 Micron Technology, Inc. Programming method to reduce gate coupling interference for non-volatile memory
JP5142478B2 (ja) * 2006-04-13 2013-02-13 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
EP2529375A1 (en) 2012-12-05
KR20130009755A (ko) 2013-01-23
JP2013518359A (ja) 2013-05-20
CN102754165B (zh) 2015-04-15
KR101854927B1 (ko) 2018-05-04
CN102754165A (zh) 2012-10-24
EP2529375B1 (en) 2016-11-02
TW201203268A (en) 2012-01-16
WO2011094419A1 (en) 2011-08-04
US8248850B2 (en) 2012-08-21
US20110182121A1 (en) 2011-07-28

Similar Documents

Publication Publication Date Title
JP5735543B2 (ja) データ状態に固有の失敗の計数に基づく不揮発性メモリのデータ復旧
US20230282276A1 (en) Semiconductor memory device and memory system
US10957397B2 (en) Non-volatile memory device, storage device, and programming method thereof for performing an erase detect operation
US9053810B2 (en) Defect or program disturb detection with full data recovery capability
US8839074B2 (en) On chip data recovery for non-volatile storage
JP5650226B2 (ja) 不揮発性記憶装置における危険状態データの識別
US8942043B2 (en) Non-volatile storage with process that reduces read disturb on end wordlines
JP5529975B2 (ja) 少ない検証動作回数での不揮発性メモリのプログラミング
US7978527B2 (en) Verification process for non-volatile storage
KR102192910B1 (ko) 반도체 장치, 메모리 시스템 및 이의 동작 방법
US8971128B2 (en) Adaptive initial program voltage for non-volatile memory
US9135989B2 (en) Write data preservation for non-volatile storage
US8842476B2 (en) Erratic program detection for non-volatile storage
US9183070B2 (en) Resting blocks of memory cells in response to the blocks being deemed to fail
US8880964B2 (en) Block and page level bad bit line and bits screening methods for program algorithm
US8385129B2 (en) Semiconductor memory device and control method thereof
KR101184830B1 (ko) 반도체 메모리 장치 및 이의 동작 방법
US20130314989A1 (en) Memory system
KR20110120469A (ko) 반도체 메모리 장치의 동작 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140106

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140106

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140514

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140729

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20141029

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20141106

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141127

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150331

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150416

R150 Certificate of patent or registration of utility model

Ref document number: 5735543

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350