TW201130078A - Structure of substrate supporting table, and plasma processing apparatus - Google Patents

Structure of substrate supporting table, and plasma processing apparatus

Info

Publication number
TW201130078A
TW201130078A TW099117023A TW99117023A TW201130078A TW 201130078 A TW201130078 A TW 201130078A TW 099117023 A TW099117023 A TW 099117023A TW 99117023 A TW99117023 A TW 99117023A TW 201130078 A TW201130078 A TW 201130078A
Authority
TW
Taiwan
Prior art keywords
processing apparatus
plasma processing
substrate supporting
supporting table
bellows
Prior art date
Application number
TW099117023A
Other languages
English (en)
Other versions
TWI463596B (zh
Inventor
Ryuichi Matsuda
Kazuto Yoshida
Original Assignee
Mitsubishi Heavy Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Ind Ltd filed Critical Mitsubishi Heavy Ind Ltd
Publication of TW201130078A publication Critical patent/TW201130078A/zh
Application granted granted Critical
Publication of TWI463596B publication Critical patent/TWI463596B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
TW099117023A 2009-05-29 2010-05-27 Construction of substrate support table and plasma processing device TWI463596B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009129842A JP5398358B2 (ja) 2009-05-29 2009-05-29 基板支持台の構造及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
TW201130078A true TW201130078A (en) 2011-09-01
TWI463596B TWI463596B (zh) 2014-12-01

Family

ID=43222662

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099117023A TWI463596B (zh) 2009-05-29 2010-05-27 Construction of substrate support table and plasma processing device

Country Status (6)

Country Link
US (1) US20120111502A1 (zh)
EP (1) EP2436802A1 (zh)
JP (1) JP5398358B2 (zh)
KR (1) KR101367473B1 (zh)
TW (1) TWI463596B (zh)
WO (1) WO2010137553A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101451736B1 (ko) * 2013-02-06 2014-10-16 주식회사 코디에스 플라즈마 에칭 장치 및 기판 이송 장치
DE102014220220B4 (de) * 2014-10-07 2018-05-30 Carl Zeiss Smt Gmbh Vakuum-Lineardurchführung und Vakuum-System damit
CN109424761B (zh) * 2017-08-31 2019-11-19 长鑫存储技术有限公司 隔离阀、半导体生产设备及其清洗方法
CN113000233B (zh) * 2019-12-18 2022-09-02 中微半导体设备(上海)股份有限公司 等离子体反应器及其气体喷嘴
CN114078680B (zh) * 2020-08-20 2023-09-29 中微半导体设备(上海)股份有限公司 等离子体处理装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63153263A (ja) * 1986-12-17 1988-06-25 Mitsubishi Electric Corp 真空処理装置
JPH05299385A (ja) * 1992-02-20 1993-11-12 Matsushita Electron Corp プラズマエッチング装置用電極およびそれを用いたプラズマエッチング装置
JP3172758B2 (ja) * 1993-11-20 2001-06-04 東京エレクトロン株式会社 プラズマエッチング方法
US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
US6287435B1 (en) * 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
JP3662779B2 (ja) * 1999-06-22 2005-06-22 シャープ株式会社 プラズマ処理装置
JP2001077088A (ja) * 1999-09-02 2001-03-23 Tokyo Electron Ltd プラズマ処理装置
JP2002151473A (ja) * 2000-11-13 2002-05-24 Tokyo Electron Ltd プラズマ処理装置及びその組立方法
US20020148565A1 (en) * 2001-04-12 2002-10-17 Applied Materials, Inc. Mushroom stem wafer pedestal for improved conductance and uniformity
JP4209618B2 (ja) 2002-02-05 2009-01-14 東京エレクトロン株式会社 プラズマ処理装置及びリング部材
WO2003067636A1 (fr) * 2002-01-22 2003-08-14 Tokyo Electron Limited Dispositif et procede de traitement de surface
JP4056855B2 (ja) 2002-01-22 2008-03-05 東京エレクトロン株式会社 表面処理装置
US7204912B2 (en) * 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
JP2005056994A (ja) * 2003-08-01 2005-03-03 Saginomiya Seisakusho Inc プラズマ処理装置
US7789963B2 (en) * 2005-02-25 2010-09-07 Tokyo Electron Limited Chuck pedestal shield

Also Published As

Publication number Publication date
US20120111502A1 (en) 2012-05-10
WO2010137553A1 (ja) 2010-12-02
JP5398358B2 (ja) 2014-01-29
TWI463596B (zh) 2014-12-01
KR101367473B1 (ko) 2014-02-25
EP2436802A1 (en) 2012-04-04
KR20120014182A (ko) 2012-02-16
JP2010275593A (ja) 2010-12-09

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MM4A Annulment or lapse of patent due to non-payment of fees