TW201129881A - Surface treatment agent, and surface treatment method - Google Patents

Surface treatment agent, and surface treatment method

Info

Publication number
TW201129881A
TW201129881A TW099132601A TW99132601A TW201129881A TW 201129881 A TW201129881 A TW 201129881A TW 099132601 A TW099132601 A TW 099132601A TW 99132601 A TW99132601 A TW 99132601A TW 201129881 A TW201129881 A TW 201129881A
Authority
TW
Taiwan
Prior art keywords
surface treatment
treatment agent
agent
substrate
treatment method
Prior art date
Application number
TW099132601A
Other languages
English (en)
Other versions
TWI493298B (zh
Inventor
Masaaki Yoshida
Mai Sugawara
Jun Koshiyama
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW201129881A publication Critical patent/TW201129881A/zh
Application granted granted Critical
Publication of TWI493298B publication Critical patent/TWI493298B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/20—Diluents or solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
TW099132601A 2009-09-28 2010-09-27 Surface treatment agent and surface treatment methods TWI493298B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009222118 2009-09-28
JP2009260037A JP5663160B2 (ja) 2009-09-28 2009-11-13 表面処理剤及び表面処理方法

Publications (2)

Publication Number Publication Date
TW201129881A true TW201129881A (en) 2011-09-01
TWI493298B TWI493298B (zh) 2015-07-21

Family

ID=43778857

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099132601A TWI493298B (zh) 2009-09-28 2010-09-27 Surface treatment agent and surface treatment methods

Country Status (4)

Country Link
US (1) US8623131B2 (zh)
JP (1) JP5663160B2 (zh)
KR (1) KR101960542B1 (zh)
TW (1) TWI493298B (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5974515B2 (ja) * 2012-02-01 2016-08-23 セントラル硝子株式会社 撥水性保護膜形成用薬液、撥水性保護膜形成用薬液キット、及びウェハの洗浄方法
WO2013115021A1 (ja) * 2012-02-01 2013-08-08 セントラル硝子株式会社 撥水性保護膜形成用薬液、撥水性保護膜形成用薬液キット、及びウェハの洗浄方法
JP5974514B2 (ja) * 2012-02-01 2016-08-23 セントラル硝子株式会社 撥水性保護膜形成用薬液、撥水性保護膜形成用薬液キット、及びウェハの洗浄方法
JP5743939B2 (ja) * 2012-03-27 2015-07-01 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法
US9570343B2 (en) 2012-06-22 2017-02-14 Avantor Performance Materials, Llc Rinsing solution to prevent TiN pattern collapse
JP6048726B2 (ja) * 2012-08-16 2016-12-21 トヨタ自動車株式会社 リチウム二次電池およびその製造方法
JP6465744B2 (ja) * 2015-05-15 2019-02-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6681795B2 (ja) * 2015-09-24 2020-04-15 東京応化工業株式会社 表面処理剤及び表面処理方法
JP2018055068A (ja) * 2016-09-30 2018-04-05 Jsr株式会社 多層レジストプロセス用膜形成材料及びパターン形成方法
CN110462525B (zh) 2017-03-24 2024-07-26 富士胶片电子材料美国有限公司 表面处理方法及用于所述方法的组合物
US11174394B2 (en) 2018-01-05 2021-11-16 Fujifilm Electronic Materials U.S.A., Inc. Surface treatment compositions and articles containing same
CN111602230A (zh) * 2018-01-09 2020-08-28 株式会社斯库林集团 衬底处理方法及衬底处理装置
JP6434186B1 (ja) * 2018-05-08 2018-12-05 住友化学株式会社 積層体およびその製造方法
JP7166113B2 (ja) * 2018-09-11 2022-11-07 東京応化工業株式会社 表面処理剤及び表面処理方法

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
US4978594A (en) * 1988-10-17 1990-12-18 International Business Machines Corporation Fluorine-containing base layer for multi-layer resist processes
JPH06163391A (ja) 1992-05-13 1994-06-10 Soltec:Kk レジストパターン形成方法
JPH07142349A (ja) 1993-11-16 1995-06-02 Mitsubishi Electric Corp 現像工程におけるフォトレジストパターンの倒れを防止する方法
EP0792195A4 (en) 1994-11-22 1999-05-26 Complex Fluid Systems Inc NON-AMINIC PHOTOSENSITIVE RESIN ADHESION PROMOTERS FOR MICROELECTRONIC APPLICATIONS
US7534547B2 (en) * 2001-03-29 2009-05-19 Osaka Gas Company Limited Optically active compound and photosensitive resin composition
WO2002083327A1 (en) * 2001-04-16 2002-10-24 Honeywell International Inc. Layered stacks and methods of production thereof
US7387868B2 (en) * 2002-03-04 2008-06-17 Tokyo Electron Limited Treatment of a dielectric layer using supercritical CO2
AU2003220039A1 (en) * 2002-03-04 2003-09-22 Supercritical Systems Inc. Method of passivating of low dielectric materials in wafer processing
US20040137153A1 (en) * 2002-04-16 2004-07-15 Michael Thomas Layered stacks and methods of production thereof
US7081673B2 (en) * 2003-04-17 2006-07-25 International Business Machines Corporation Multilayered cap barrier in microelectronic interconnect structures
US7442727B2 (en) * 2003-06-04 2008-10-28 Degussa Ag Pyrogenically prepared, surface modified aluminum oxide
US8088566B2 (en) * 2007-03-26 2012-01-03 Fujifilm Corporation Surface-treating agent for pattern formation and pattern-forming method using the surface-treating agent
KR20100121523A (ko) * 2008-02-22 2010-11-17 아사히 가라스 가부시키가이샤 피노광 기판용 발수화제 조성물, 레지스트 패턴의 형성 방법 및 상기 형성 방법에 의해 제조한 전자 디바이스, 피노광 기판의 발수화 처리 방법, 피노광 기판용 발수화제 세트 및 그것을 사용한 피노광 기판의 발수화 처리 방법

Also Published As

Publication number Publication date
KR101960542B1 (ko) 2019-03-20
KR20110034549A (ko) 2011-04-05
US8623131B2 (en) 2014-01-07
TWI493298B (zh) 2015-07-21
JP5663160B2 (ja) 2015-02-04
JP2011091349A (ja) 2011-05-06
US20110073011A1 (en) 2011-03-31

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