201112317 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種多線鑛（multi_wire sawing)切割裝 置，尤指一種串連式多線鋸晶塊（Brick)切片裝置，其可提 高晶塊的切割效率。 【先前技術】 近年來’因石油枯竭、全球暖化而使得替代能源的發 展日皿迫t刀@在替代能源中，太陽能具備解決高油價問 題的功能，又可達到環保、節能的效果。 由於太陽能電池的需求快速增長，製造薇商勢必持續 增購生產設備，擴充產能以應付快速成長的市場需求。在 多晶石夕太陽能電池的製造流程中，首先將—定純度的石夕材 融化後再結晶成四方形的大石夕晶錠(ing〇t)，此過程由於類 似金屬之鑄㈣程，因切晶錠也被稱為㈣。然後，此 矽晶錠經由切割而成長方形矽晶塊，切割方法目前 多以帶鑛（Band Saw)作為切割工具（也有用外徑鑛⑽_)) ’如附件一、二所示者。 石夕晶塊經過修面、修邊處理後，再以多線鑛（mult …切割機將石夕晶塊切割成厚度相當薄的曰) ::)。這些晶片再經過其它的擴散製程 '鑛膜製二 :製程等便可製作成太陽能電池。為了減少晶鍵切州 生的，枓損耗，常採用多線鑛（muhi_㈣叫切割機爸 來進行晶鍵的切割。 詳述如下’先將一晶錠利用現有多線鋸切割機二切史 為複數方形的長條晶塊’再將各晶塊切割為複數方：的薄 201112317 日曰片6月參照第二圖所示，當使晶塊（80)利用現有的多線 鑛刀。J機口（90)進行切片日寺，其係先使一鑛線⑺）係缠繞於 放線捲筒上，而後使此鋸線於兩滾筒（92)間往復延伸， 形成一具有數百條平行線段的線網（93)，再將此鑛線（91)拉 動捲收至I線捲筒±，此時使線網（93)與晶塊（⑼)接觸而 將晶塊（80)切割為數百片薄晶片。 然而，由於現有的晶塊(8〇)切割方式下，鋸線(91)的每 次捲收僅能在一台容始电丨lil4 y I 多線鋸切割機台（90)上切割一或數個晶 塊（80)，因此切割效率仍有可改進之處。 U照第二圖所示，目前業界亦有已開始採用多線 鑛來進行切割’係將金屬線繞成-交又切割路徑而形成L 網狀鋸者。 乂 【發明内容】 2鑑於現有的晶塊切割方式其切割效率尚有可改進之 發月之目的在於提供_種串連式多線鑛晶塊切片裝 ’其可使料的每次捲收㈣更多晶塊 的切割效率。 何呵日日塊 為達成以上的目的，本發 裝置係包括·· 本發…連式多線鑛晶塊切片 複數個基座，发孫抑日日 台； 〃係相鄰間隔設置’各基座係包含—平 複數個導引組件，係分別面對且對應於該複 之平台，各導引組件與對應基座之平台 土座 而使該導引組件與該平么 進仃相對移動 义卞σ相互接近，各導 筒，該兩滾筒係間隔平行 ’、匕δ兩滾 仃又置且千仃於對應平台之表面； 201112317 以及 -鋸線’其係於各導引組件之兩滾筒間往復延伸，而 形成複數分別面對且平行該複數個基座之平台表面的線網 較佳的是’相鄰之導引組件間係設置一張力控制裝置 ’鑛線係通過該張力控制裝置以控制㈣之張力。 較佳的是’各平台係為不可移動，而各導 對於對應之平台為可移動。201112317 VI. Description of the Invention: [Technical Field] The present invention relates to a multi-wire sawing cutting device, and more particularly to a tandem multi-wire sawing block slicing device capable of improving crystal The cutting efficiency of the block. [Prior Art] In recent years, the development of alternative energy sources has been forced by the depletion of oil and global warming. In alternative energy sources, solar energy has the function of solving the problem of high oil prices, and it can achieve environmental protection and energy saving effects. Due to the rapid growth in demand for solar cells, Weiwei is bound to continue to increase production equipment and expand production capacity to cope with the rapidly growing market demand. In the manufacturing process of the polycrystalline stone solar cell, the first-purity stone material is first melted and then crystallized into a square-shaped Da Shi Xijing ingot (ing〇t), which is a metal-like casting (four) process. The ingot is also referred to as (four). Then, the twin ingot is cut into rectangular lumps, and the cutting method is currently used as a cutting tool (also known as OD (10) _)) as shown in Annexes 1 and 2. After the shaved crystal block has been shaved and trimmed, the multi-line mine (mult ... cutting machine will cut the Shi Xi crystal block into a relatively thin crucible) ::). These wafers can be fabricated into solar cells through other diffusion processes, 'mineral film system 2: process. In order to reduce the loss of the crystal bond, the 枓 loss, often used multi-line mine (muhi_ (four) called the cutting machine dad to cut the crystal key. Details as follows] first use an existing ingot to use the existing multi-wire saw cutting machine A plurality of square long ingots 'cut each of the ingots into a plurality of squares: thin 201112317. The dice piece is shown in the second figure in June, when the ingot (80) is used to make use of the existing multi-line miner. The mouth (90) performs the slicing of the temple, which first winds a mine line (7)) onto the pay-off reel, and then reciprocates the saw wire between the two rollers (92) to form a plurality of parallel segments. The wire mesh (93), and then pull the wire (91) to the I wire reel ±, at this time, the wire mesh (93) is contacted with the crystal block ((9)) to cut the crystal block (80) into several One hundred thin wafers. However, due to the existing ingot (8〇) cutting mode, each winding of the saw wire (91) can only be cut on one of the first electric saw lil4 y I multi-wire saw cutting machine (90) or There are several ingots (80), so there is still room for improvement in cutting efficiency. U As shown in the second figure, the industry has also begun to use multi-line mines for cutting. The metal wire is wound into a cross-cutting path to form an L-mesh saw.乂[Summary of the Invention] 2 In view of the existing ingot cutting method, the cutting efficiency is still improved. The purpose of the moon is to provide a series of multi-line ore block slicings, which can make each material roll (4). More cutting efficiency of the ingot. In order to achieve the above objectives, the device of the Japanese version includes the ···················································································· The pedestal includes a plurality of guiding components that face and correspond to the platform, and each guiding component and the platform pedestal of the corresponding pedestal enable the guiding component to move relative to the platform.卞σ are close to each other, each guide cylinder, the two drums are spaced apart in parallel, 匕δ two rollers are placed again and are placed on the surface of the corresponding platform; 201112317 and - sawing line 'between the two rollers of each guiding component Reciprocatingly extending, and forming a plurality of nets respectively facing and parallel to the surface of the platform of the plurality of pedestals, preferably a "force control device is disposed between adjacent guide members" through the tension control device Control the tension of (4). Preferably, each platform is immovable and each of the platforms is movable.
較佳的疋，各基座係進_步包含一側板，該側板係垂 直設置於該基座之平台—側，各導！I組件係進-步包含一 連結板，該連結板係可移動地設置於對應基座之側板上， 該導引組件之兩滾筒係結合㈣連結板上且位於位於對應 平台之表面上方。 較佳的是，各導引組件係為不可移動，而各平台係相 對於對應之導引組件為可移動。 本發明的裝置係使各基座之平台上置放固定一或數個 晶塊，再使用鋸線串連於各導引組件上以進行晶塊的切割 ，因此鋸線的每次捲收均可切割複數基座平台上的晶塊， 所以每次切割的晶塊數目可大幅增加，顯著提高了晶塊的 切割效率’進而降低晶片的製造成本。 【實施方式】 請參照第一圖所示，本發明之較佳實施例係包括複數 個基座（11)、複數個分別對應於該複數個基座（11)之導引組 件（12)以及一延伸於各導引組件（12)中之鋸線（1 3)，其中 該複數個基座（11)係相鄰間隔設置，各基座（丨丨）係包含 201112317 一平台（111)’該平台（111)係用以承載固定一或數個晶塊 (20)，於本較佳實施例中，各基座（11)係進一步包含一側板 (112)，該側板（112)係垂直設置於該基座（11)之平台（ιιι)一 側， 該複數個導引組件（12)係分別面對且對應於該複數個 基座（11)之平台（111) ’各導引組件（12)與對應基座（1 ”之平 台（111)係可進行相對移動而使該導引組件（12)與該平台 (111)相互接近，各導引組件（12)包含兩滾筒（121)，該兩滾 筒（121)係間隔平行設置且平行於對應平台（111)之表面，於 本較佳實施例中，各平台（111)係為不可移動，而各導引組 件（12)係相對於對應平台（111)為可移動，各導引組件（12) 係可進一步包含一連結板（122)，該連結板（122)係可移動地 設置於對應基座（10)之側板（n2)上，各導引組件（12)之兩 滚4 (12 1)係結合於連結板（丨22)上且位於對應平台（丨丨丨）之 表面上方，藉此該連結板（112)可帶動該兩滾筒（121)上下移 動而遠離或接近對應平台（1〗丨）之表面，相鄰之導引組件間 係設置一張力控制裝置（1 4); 該鋸線（13)係於各導引組件〇2)之兩滾筒（121)間往復 延伸，而形成複數分別面對且平行該複數個基座之平台 (111)表面的線網（131)，各導引組件（12)係藉此鋸線（13)之 延伸而彼此串連，該鋸線（13)係可通過該張力控制裝置（14) 以控制鋸線（13 )之張力，以達較佳的切割效果。 當本發明之較佳實例使用於晶塊（2〇)切割時，係使各 基座（11)之平台（111)表面各別承載固定一或數個晶塊（2〇) ’而後使各連結板（122)帶動對應之滚筒（丨2 1)及滾筒（121) 201112317 間之線網（131)向下移動，而使線網（131)與晶塊（2〇)接觸， 並於線肩（131)與晶塊（2〇)之接觸處供給研磨液，此時藉由 鋸線（13)捲收即可將各晶塊（2〇)切割為薄晶片。 本發明之另一較佳實施例則使各導引組件（12)係為不 可移動，而各平台（111)係相對於對應之導弓丨組件（12)為可 移動，而使晶塊（20)與導引組件（12)可相互接近而進行晶塊 (20)的切割。導引組件(12)與平台(111)間的相對移動除了 可為垂直的上下移動外，亦可為水平的橫向移動。 本發明之較佳實施例由於係使一條鋸線（13)串連於複 數導引組件（12)中，因㈣線（13)的每:欠捲㈣可切割複數 基座⑽之平台(m)上的晶塊(20)，因此可顯著提高晶塊 (20)的切割效率，降低晶塊(2〇)的切割成本及晶片的製造成 本。 【圖式簡單說明】 第一圖係為本發明較佳實施例之示意圖。 第二圖係為現有晶塊切割方式之示意圖。 第三圖係現有交錯式之晶鍵切割機構的示意圖。 【主要元件符號說明】 (11)基座 (112)側板 (111)平台 (12)導引組件 U22)連結板 021)滾筒 (13) 鋸線 (14) 張力控制裝置 U3 1)線網 201112317 (20)晶錠 (8 0)晶塊 (90)多線鋸切割機台 （91)鋸線 (92)滾筒 （93)線網Preferably, each of the bases includes a side plate which is vertically disposed on the platform side of the base, and each guide! The I component assembly further includes a web movably disposed on the side panel of the corresponding base, the two rollers of the guide assembly being coupled to the (four) web and located above the surface of the corresponding platform. Preferably, each of the guide members is immovable and each platform is moveable relative to the corresponding guide assembly. In the device of the present invention, one or several ingots are fixed on the platform of each pedestal, and then the saw wire is connected to each guiding component to perform the cutting of the crystal block, so each winding of the sawing wire is The ingots on the plurality of pedestal platforms can be cut, so that the number of dicing blocks per dicing can be greatly increased, which significantly improves the cutting efficiency of the ingots, thereby reducing the manufacturing cost of the wafer. [Embodiment] Referring to the first figure, a preferred embodiment of the present invention includes a plurality of pedestals (11), a plurality of guiding assemblies (12) respectively corresponding to the plurality of pedestals (11), and a saw wire (13) extending in each of the guiding assemblies (12), wherein the plurality of pedestals (11) are adjacently spaced apart, and each pedestal (丨丨) comprises a 201112317 platform (111) The platform (111) is configured to carry one or several ingots (20). In the preferred embodiment, each of the bases (11) further includes a side plate (112), and the side plate (112) is vertical. Provided on a platform (ιιι) side of the base (11), the plurality of guiding assemblies (12) are respectively facing and corresponding to the platform (111) of the plurality of bases (11) (12) The platform (111) corresponding to the base (1) is relatively movable to bring the guiding assembly (12) into proximity with the platform (111), and each guiding assembly (12) includes two rollers (121). The two rollers (121) are spaced apart in parallel and parallel to the surface of the corresponding platform (111). In the preferred embodiment, each platform (111) is Not movable, and each guiding component (12) is movable relative to the corresponding platform (111), each guiding component (12) may further comprise a connecting plate (122), the connecting plate (122) is movable Is disposed on the side plate (n2) of the corresponding base (10), and the two rollers 4 (12 1) of each guiding component (12) are coupled to the connecting plate (丨22) and located on the corresponding platform (丨丨丨) Above the surface, the connecting plate (112) can drive the two rollers (121) to move up and down away from or close to the surface of the corresponding platform (1), and a force control device is arranged between the adjacent guiding components ( 1 4); The saw wire (13) is reciprocally extended between the two rollers (121) of each of the guiding members )2) to form a plurality of lines facing and parallel to the surface of the platform (111) of the plurality of pedestals The net (131), each guiding component (12) is connected to each other by the extension of the sawing wire (13), and the sawing wire (13) is controlled by the tension control device (14) to control the sawing wire (13) Tension for better cutting effect. When the preferred embodiment of the present invention is used for incision (2 inch) cutting, the pedestal (11) is flattened (111) The surface respectively carries one or several ingots (2〇), and then each connecting plate (122) drives the corresponding roller (丨2 1) and the roller (121) to the wire mesh (131) between 201112317 Move down, and make the wire mesh (131) contact the crystal block (2〇), and supply the polishing liquid at the contact between the wire shoulder (131) and the crystal block (2〇), at this time by the saw wire (13) Each of the crystal blocks (2 turns) can be cut into thin wafers. Another preferred embodiment of the present invention makes each guide assembly (12) non-movable, and each platform (111) is corresponding to the corresponding one. The guide arch assembly (12) is movable, and the ingot (20) and the guide assembly (12) are adjacent to each other to perform the cutting of the ingot (20). The relative movement between the guiding assembly (12) and the platform (111) can be horizontally horizontally moved in addition to vertical vertical movement. The preferred embodiment of the present invention is such that a saw wire (13) is connected in series to the plurality of guiding assemblies (12), because each of the (four) wires (13): under-rolled (four) can cut the platform of the plurality of pedestals (10) (m) The ingot (20) on the substrate can significantly improve the cutting efficiency of the ingot (20), reduce the cutting cost of the ingot (2〇), and the manufacturing cost of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS The first drawing is a schematic view of a preferred embodiment of the invention. The second figure is a schematic diagram of the existing ingot cutting method. The third figure is a schematic diagram of a conventional interlaced crystal key cutting mechanism. [Description of main component symbols] (11) Base (112) side plate (111) Platform (12) Guide assembly U22) Connecting plate 021) Roller (13) Saw wire (14) Tension control device U3 1) Wire network 201112317 ( 20) Ingot (80) ingot (90) Multi-wire saw cutting machine (91) Saw line (92) Roller (93) line net