CN105252659A - Polycrystalline silicon slicing method - Google Patents
Polycrystalline silicon slicing method Download PDFInfo
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- CN105252659A CN105252659A CN201510725876.7A CN201510725876A CN105252659A CN 105252659 A CN105252659 A CN 105252659A CN 201510725876 A CN201510725876 A CN 201510725876A CN 105252659 A CN105252659 A CN 105252659A
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Abstract
The invention discloses a polycrystalline silicon slicing method, and belongs to the technical field of polycrystalline silicon slicing processes. The method is characterized in that a silicon ingot is cut transversely and vertically in sequence. Silicon wafer grains obtained through slicing of the method are in a long strip shape, the overall grains are large, composition of manufactured batteries can be effectively reduced, the minority carrier lifetime is 20 us and above (the minority carrier lifetime of common polycrystalline silicon solar silicon wafers in the industry is 10 us and below), and the solar battery average conversion efficiency is 17.50% and above. According to the method for slicing, a clamp does not need to be adjusted, whether silicon wafers are smashed or not does not need to be considered when the clamp is placed, many unnecessary operations are avoided, the negative effects possibly caused by the operations to silicon bars in the cutting process are eradicated, the operation steps of operators are reduced, and the slicing work efficiency is not influenced.
Description
Technical field
The present invention relates to silicon ingot subsequent processing techniques field, particularly a kind ofly polycrystal silicon ingot is processed to the method obtained for the silicon rod of cutting into slices.
Background technology
In the long brilliant technical process of existing polycrystalline crystal ingot, a most important feature is exactly long chip to for from bottom to head, this higher impurity of hardness factor such as metal impurities, C and SiC, SiN and SiCNx just making most separation be less than 1 concentrates on polycrystalline crystal ingot the top, cause crystal ingot more more toward top impurity, hardness is higher, and minority carrier life time is lower simultaneously; The rare metal that simultaneously some separations are greater than 1 concentrates on bottom crystal ingot, simultaneously in long brilliant and annealing process, in crucible and SiN, impurity can spread to crystal ingot, cause bottom crystal ingot and surrounding minority carrier life time value step-down, because bottom crystal ingot, oxygen content is higher, more boron-oxygen complex can be formed bottom crystal ingot, this contributes to improving minority carrier life time, thus to cause bottom crystal ingot long chip to the curved distribution of minority carrier life time in 3cm.
There is no at present both at home and abroad comparatively high efficiency method in industry to solve existing polycrystalline crystal ingot minority carrier life time and to detect and low minority carrier life time part is blocked that operation is many and complicated, cost is high and affects the problem of circulation crystal ingot quality.
Summary of the invention
Technical problem to be solved by this invention is: to detect and low minority carrier life time part is blocked that operation is many and complicated, cost is high and affects the problem of circulation crystal ingot quality to solve existing polycrystalline crystal ingot minority carrier life time.
The technical solution adopted for the present invention to solve the technical problems is: a kind ofly polycrystal silicon ingot is processed to the method obtained for the silicon rod of cutting into slices, processing step specific as follows: 1. opening power start line cutting machine; 2. check whether gauze has wire jumper; 3. check whether guide roller damages; 4. check whether the steel wire surplus of putting on take-up pulley enough cuts; 5. check mortar supply, nozzle, work piece apparatus; 6. whether the position of transversely-moving rack corrects; 7. press " run and prepare " key and enter " automatic entry condition setting " picture; 8. press " manual operation " key and enter " electric pump operates separately " picture; 9. press " procedure " key and enter " simulating cut " picture; 10. enter consumptive material by " production leadtime " and use picture; 11. ready after see whether also have warning message to exist; 12. enter key frame, check one time.
Further, cut perpendicular again for first for silicon ingot crosscut.
Further again, first by silicon ingot crosscut uniformly two parts up and down, then Horizontal vertical is cut into little ingot, finally each little ingot is carried out longitudinal direction and erects and be cut into silicon chip.
Further again, in cutting process, observe machine operation conditions, line tension controls at about 21N, and average feeding is 0.32mm/min.
The invention has the beneficial effects as follows: combine the long-term monitoring of existing polycrystalline crystal ingot quality, experiment statistics and analysis and summary, under the prerequisite to the effective monitoring of polycrystalline technique and process for stabilizing, change the process that existing domestic and international polycrystalline crystal ingot blocks at minority carrier lifetime, low minority carrier life time layer completely, fundamentally solve minority carrier life time for a long time to detect and low minority carrier life time layer amputation operation is many and complicated, cost is high and affect the phenomenon of circulation crystal ingot quality, simultaneously for the improvement of silicon chip yield lays the foundation, also further provide guarantee for silicon chip at the yield of battery-end.
Detailed description of the invention
The technical solution adopted for the present invention to solve the technical problems is: a kind ofly polycrystal silicon ingot is processed to the method obtained for the silicon rod of cutting into slices, processing step specific as follows: 1. opening power start line cutting machine, when checking peripheral cooling, compressed air, access arrangement operation when reaching setting.2. check whether gauze has wire jumper, and wire jumper is handled well.3. check whether guide roller damages, if any being changed; Check outside degree of impairment in home roll, if any moving inwards.4. check whether the steel wire surplus of putting on take-up pulley enough cuts, check that gauze tension force is enough normal simultaneously.5. check mortar supply, nozzle, work piece apparatus.6. whether the position of transversely-moving rack corrects, can manual adjustments if any error.7. press " run prepare " key to enter " automatic entry condition setting " picture and see that the fault which also has can not meet Production requirement will be improved, enter " feed unit " picture, cutting 0 point is set; Manual upwards lifting 2mm position state to be cut.Enter " steel wire location " and " carriage release lever setting " picture, solution is with " 4 " and " 6 " if you have questions, and manually changes correct parameter.8. press " manual operation " key and enter " electric pump operates separately " picture, check that whether mortar state is normal.9. press " procedure " key and enter steel wire consumption, the clipping time that " simulating cut " understands production one cutter, enter the technological parameter that " chart procedures " picture checks warming-up and cutting.10. entering consumptive material by " production leadtime " uses picture to check consumptive material remaining time.11. ready after see whether also have warning message to exist, if given and elimination.12. enter key frame, check one time, start cutting as normally pressed " autostart " key.
Further, cut perpendicular again for first for silicon ingot crosscut.
Further again, first by silicon ingot crosscut uniformly two parts up and down, then Horizontal vertical is cut into little ingot, finally each little ingot is carried out longitudinal direction and erects and be cut into silicon chip.
Further again, in cutting process, observe machine operation conditions, line tension controls at about 21N, and average feeding is 0.32mm/min.
In conjunction with the long-term monitoring of existing polycrystalline crystal ingot quality, experiment statistics and analysis and summary, under the prerequisite to the effective monitoring of polycrystalline technique and process for stabilizing, change the process that existing domestic and international polycrystalline crystal ingot blocks at minority carrier lifetime, low minority carrier life time layer completely, fundamentally solve minority carrier life time for a long time to detect and low minority carrier life time layer amputation operation is many and complicated, cost is high and affect the phenomenon of circulation crystal ingot quality, simultaneously for the improvement of silicon chip yield lays the foundation, also further provide guarantee for silicon chip at the yield of battery-end.
Claims (4)
1. a polysilicon dicing method, processing step specific as follows:
(1), opening power start line cutting machine;
(2), check whether gauze has wire jumper;
(3), check whether guide roller damages;
(4), check whether the steel wire surplus of putting on take-up pulley enough cuts;
(5), mortar supply, nozzle, work piece apparatus is checked;
(6), whether the position of transversely-moving rack corrects;
(7), press " run and prepare " key and enter " automatic entry condition setting " picture;
(8), press " manual operation " key and enter " electric pump operates separately " picture;
(9), press " procedure " key and enter " simulating cut " picture;
(10), enter consumptive material by " production leadtime " and use picture;
(11), ready after see whether also have warning message to exist;
(12), enter key frame, check one time.
2. a kind of polysilicon dicing method as claimed in claim 1, is characterized in that: cut perpendicular again for first for silicon ingot crosscut.
3. a kind of polysilicon dicing method as claimed in claim 2, is characterized in that: first by silicon ingot crosscut uniformly upper and lower two parts, then Horizontal vertical is cut into little ingot, finally each little ingot is carried out longitudinal direction and erects and be cut into silicon chip.
4. a kind of polysilicon dicing method as claimed in claim 1, it is characterized in that: in cutting process, observe machine operation conditions, line tension controls at about 21N, and average feeding is 0.32mm/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510725876.7A CN105252659A (en) | 2015-10-30 | 2015-10-30 | Polycrystalline silicon slicing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510725876.7A CN105252659A (en) | 2015-10-30 | 2015-10-30 | Polycrystalline silicon slicing method |
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| CN105252659A true CN105252659A (en) | 2016-01-20 |
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| CN201510725876.7A Pending CN105252659A (en) | 2015-10-30 | 2015-10-30 | Polycrystalline silicon slicing method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107030909A (en) * | 2017-05-15 | 2017-08-11 | 南通综艺新材料有限公司 | A kind of use diamond wire blocks the cutting technique of polycrystal silicon ingot |
| WO2022001008A1 (en) * | 2020-06-28 | 2022-01-06 | 银川隆基光伏科技有限公司 | Solar silicon wafer cutting method, device, and storage medium |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201287401Y (en) * | 2008-08-12 | 2009-08-12 | 中国电子科技集团公司第四十五研究所 | Double-guide pulley detection system for multi-lane cutting machine |
| CN101890763A (en) * | 2010-07-02 | 2010-11-24 | 中国电子科技集团公司第四十五研究所 | Wiring transversely-moving rack |
| CN103112093A (en) * | 2013-01-25 | 2013-05-22 | 浙江向日葵光能科技股份有限公司 | Sliced method of polycrystalline silicon solar cell |
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2015
- 2015-10-30 CN CN201510725876.7A patent/CN105252659A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201287401Y (en) * | 2008-08-12 | 2009-08-12 | 中国电子科技集团公司第四十五研究所 | Double-guide pulley detection system for multi-lane cutting machine |
| CN101890763A (en) * | 2010-07-02 | 2010-11-24 | 中国电子科技集团公司第四十五研究所 | Wiring transversely-moving rack |
| CN103112093A (en) * | 2013-01-25 | 2013-05-22 | 浙江向日葵光能科技股份有限公司 | Sliced method of polycrystalline silicon solar cell |
Non-Patent Citations (2)
| Title |
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| 上传者：WSDEEVER: "PV800H，PV600H（S），PV1000H触摸面板操作说明书", 《百度文库，HTTP://WENKU.BAIDU.COM/VIEW/10DFFFD77C1CFAD6195FA75D.HTML》 * |
| 上传者：ZHANG3355327: "切片培训", 《百度文库，HTTP://WENKU.BAIDU.COM/LINK?URL=POQ909CT0J8LK6QD3TADWDNJJEXBQLGYVIX-2O2ZGFFNDKOBOCYSYB7SJQ7BZO789S66UQGIP81EMTUBHFMBE9NILE5A75HI8SW-NYMRRBK》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107030909A (en) * | 2017-05-15 | 2017-08-11 | 南通综艺新材料有限公司 | A kind of use diamond wire blocks the cutting technique of polycrystal silicon ingot |
| WO2022001008A1 (en) * | 2020-06-28 | 2022-01-06 | 银川隆基光伏科技有限公司 | Solar silicon wafer cutting method, device, and storage medium |
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Application publication date: 20160120 |
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| RJ01 | Rejection of invention patent application after publication |