TW201034244A - Method for manufacturing semiconductor light emitting element, and semiconductor light emitting element - Google Patents

Method for manufacturing semiconductor light emitting element, and semiconductor light emitting element Download PDF

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Publication number
TW201034244A
TW201034244A TW098144772A TW98144772A TW201034244A TW 201034244 A TW201034244 A TW 201034244A TW 098144772 A TW098144772 A TW 098144772A TW 98144772 A TW98144772 A TW 98144772A TW 201034244 A TW201034244 A TW 201034244A
Authority
TW
Taiwan
Prior art keywords
layer
substrate
compound semiconductor
semiconductor light
emitting device
Prior art date
Application number
TW098144772A
Other languages
English (en)
Chinese (zh)
Inventor
Tetsuo Sakurai
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW201034244A publication Critical patent/TW201034244A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type

Landscapes

  • Led Devices (AREA)
TW098144772A 2008-12-26 2009-12-24 Method for manufacturing semiconductor light emitting element, and semiconductor light emitting element TW201034244A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008334869A JP2010157604A (ja) 2008-12-26 2008-12-26 半導体発光素子の製造方法

Publications (1)

Publication Number Publication Date
TW201034244A true TW201034244A (en) 2010-09-16

Family

ID=42287572

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098144772A TW201034244A (en) 2008-12-26 2009-12-24 Method for manufacturing semiconductor light emitting element, and semiconductor light emitting element

Country Status (5)

Country Link
US (1) US8580592B2 (https=)
JP (1) JP2010157604A (https=)
CN (1) CN102265415A (https=)
TW (1) TW201034244A (https=)
WO (1) WO2010073957A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012227479A (ja) * 2011-04-22 2012-11-15 Sharp Corp 窒化物半導体素子形成用ウエハ、窒化物半導体素子形成用ウエハの製造方法、窒化物半導体素子、および窒化物半導体素子の製造方法
JP5881560B2 (ja) * 2012-08-30 2016-03-09 株式会社東芝 半導体発光装置及びその製造方法
CN108281378B (zh) * 2012-10-12 2022-06-24 住友电气工业株式会社 Iii族氮化物复合衬底、半导体器件及它们的制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000100728A (ja) 1998-09-18 2000-04-07 Hitachi Ltd 結晶成長装置
TW558846B (en) 2001-06-15 2003-10-21 Nichia Corp Nitride semiconductor light emitting element and light emitting device using the same
JP2003063897A (ja) * 2001-08-28 2003-03-05 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体基板およびその製造方法ならびに半導体発光素子の製造方法ならびに半導体装置の製造方法
JP2004168622A (ja) 2002-11-22 2004-06-17 Kyocera Corp 単結晶サファイア基板およびその製造方法
JP2006156454A (ja) * 2004-11-25 2006-06-15 Sony Corp 結晶成長方法及び窒化ガリウム系化合物薄膜の製造方法
US8691674B2 (en) 2005-09-29 2014-04-08 Sumitomo Chemical Company, Limited Method for producing group 3-5 nitride semiconductor and method for producing light-emitting device
JP4806261B2 (ja) * 2006-01-05 2011-11-02 パナソニック株式会社 窒化物系化合物半導体素子用ウェハーの製造方法
JP2008177525A (ja) 2006-12-20 2008-07-31 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2008294449A (ja) * 2008-06-03 2008-12-04 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子並びにランプ

Also Published As

Publication number Publication date
CN102265415A (zh) 2011-11-30
WO2010073957A1 (ja) 2010-07-01
US20110260177A1 (en) 2011-10-27
JP2010157604A (ja) 2010-07-15
US8580592B2 (en) 2013-11-12

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