TW201000889A - Particle inspection apparatus, exposure apparatus, and device manufacturing method - Google Patents

Particle inspection apparatus, exposure apparatus, and device manufacturing method Download PDF

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Publication number
TW201000889A
TW201000889A TW098105142A TW98105142A TW201000889A TW 201000889 A TW201000889 A TW 201000889A TW 098105142 A TW098105142 A TW 098105142A TW 98105142 A TW98105142 A TW 98105142A TW 201000889 A TW201000889 A TW 201000889A
Authority
TW
Taiwan
Prior art keywords
light beam
inspection
particle
particle inspection
reticle
Prior art date
Application number
TW098105142A
Other languages
English (en)
Chinese (zh)
Inventor
Atsushi Kawahara
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW201000889A publication Critical patent/TW201000889A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW098105142A 2008-02-20 2009-02-18 Particle inspection apparatus, exposure apparatus, and device manufacturing method TW201000889A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008039463A JP2009198269A (ja) 2008-02-20 2008-02-20 異物検査装置、露光装置およびデバイス製造方法

Publications (1)

Publication Number Publication Date
TW201000889A true TW201000889A (en) 2010-01-01

Family

ID=40739124

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098105142A TW201000889A (en) 2008-02-20 2009-02-18 Particle inspection apparatus, exposure apparatus, and device manufacturing method

Country Status (5)

Country Link
US (2) US7760348B2 (ko)
EP (1) EP2093611A3 (ko)
JP (1) JP2009198269A (ko)
KR (1) KR20090090277A (ko)
TW (1) TW201000889A (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5686394B1 (ja) * 2014-04-11 2015-03-18 レーザーテック株式会社 ペリクル検査装置
US10429318B2 (en) 2017-12-19 2019-10-01 Industrial Technology Research Institute Detection system for a multilayer film and method thereof using dual image capture devices for capturing forward scattered light and back scattered light
WO2021148550A1 (en) * 2020-01-23 2021-07-29 Asml Holding N.V. Method for region of interest processing for reticle particle detection

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4886975A (en) * 1986-02-14 1989-12-12 Canon Kabushiki Kaisha Surface examining apparatus for detecting the presence of foreign particles on two or more surfaces
JPH0820371B2 (ja) * 1988-01-21 1996-03-04 株式会社ニコン 欠陥検査装置及び欠陥検査方法
JP3259331B2 (ja) * 1992-05-29 2002-02-25 キヤノン株式会社 表面状態検査装置
JP3314440B2 (ja) * 1993-02-26 2002-08-12 株式会社日立製作所 欠陥検査装置およびその方法
JP3253177B2 (ja) * 1993-06-15 2002-02-04 キヤノン株式会社 表面状態検査装置
US5581348A (en) * 1993-07-29 1996-12-03 Canon Kabushiki Kaisha Surface inspecting device using bisected multi-mode laser beam and system having the same
JPH0815169A (ja) 1994-06-28 1996-01-19 Canon Inc 異物検査装置及びそれを用いた半導体デバイスの製造 方法
JPH1183752A (ja) 1997-09-10 1999-03-26 Canon Inc 表面状態検査方法及び表面状態検査装置
US6204917B1 (en) * 1998-09-22 2001-03-20 Kla-Tencor Corporation Backside contamination inspection device
US7349090B2 (en) * 2000-09-20 2008-03-25 Kla-Tencor Technologies Corp. Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography
US6724476B1 (en) * 2002-10-01 2004-04-20 Advanced Micro Devices, Inc. Low defect metrology approach on clean track using integrated metrology
US7227628B1 (en) * 2003-10-10 2007-06-05 Kla-Tencor Technologies Corp. Wafer inspection systems and methods for analyzing inspection data
JP4217692B2 (ja) * 2005-04-20 2009-02-04 キヤノン株式会社 異物検査装置及び異物検査方法、露光装置、並びにデバイス製造方法

Also Published As

Publication number Publication date
US7760348B2 (en) 2010-07-20
US20090207406A1 (en) 2009-08-20
EP2093611A2 (en) 2009-08-26
KR20090090277A (ko) 2009-08-25
JP2009198269A (ja) 2009-09-03
US8059269B2 (en) 2011-11-15
EP2093611A3 (en) 2012-06-27
US20100273115A1 (en) 2010-10-28

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