JP4846510B2 - 表面位置計測システム及び露光方法 - Google Patents
表面位置計測システム及び露光方法 Download PDFInfo
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- JP4846510B2 JP4846510B2 JP2006278071A JP2006278071A JP4846510B2 JP 4846510 B2 JP4846510 B2 JP 4846510B2 JP 2006278071 A JP2006278071 A JP 2006278071A JP 2006278071 A JP2006278071 A JP 2006278071A JP 4846510 B2 JP4846510 B2 JP 4846510B2
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- 238000000034 method Methods 0.000 title claims description 20
- 238000005259 measurement Methods 0.000 title claims description 15
- 238000007689 inspection Methods 0.000 claims description 96
- 238000004364 calculation method Methods 0.000 claims description 23
- 238000002834 transmittance Methods 0.000 claims description 21
- 230000003287 optical effect Effects 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000013461 design Methods 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 52
- 239000011229 interlayer Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7026—Focusing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7092—Signal processing
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Signal Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
Description
上記のように、本発明の実施の形態を記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかとなろう。例えば図1に示す反射率算出モジュールは、図2に示す複数のマスクパターン5〜8の透過率から、図4に示す複数の回路パターン45〜48のそれぞれの予測反射率を算出すると説明した。これに対し、図1に示す反射率算出モジュールは、図2に示す複数のマスクパターン5〜8のそれぞれにおける遮光膜又は半透明物によるマスク基板18の被覆率から、図4に示す複数の回路パターン45〜48のそれぞれの予測反射率を算出してもよい。また図8のステップS105及びステップS106は、ステップS107の前であれば、いつ行ってもよい。以上示したように、本発明の技術的範囲は上記の説明からは妥当な特許請求の範囲に係る発明特定事項によってのみ定められるものである。
5, 6, 7, 8…マスクパターン
10…検査光源
11…光検出器
13…ウェハ
32…ウェハステージ
45, 46, 47, 48…回路パターン
202…反射率算出モジュール
203…照射条件設定モジュール
204…光源制御モジュール
205…位置算出モジュール
206…ステージ制御モジュール
Claims (5)
- 複数の回路パターンのそれぞれの予測反射率を、前記複数の回路パターンの製造に用いられたフォトマスクの設計データから算出する反射率算出モジュールと、
前記複数の回路パターンのそれぞれの上の複数の検査領域毎に、前記予測反射率に基づいて照射条件を変化させながら検査光を照射する検査光源と、
前記複数の検査領域のそれぞれの表面位置を検出するために、前記複数の検査領域のそれぞれで反射された前記検査光を検出する光検出器
とを備えることを特徴とする表面位置計測システム。 - フォトマスクに設けられた複数のマスクパターンの像を、ウェハ上に配置された回路形成用レジスト膜上に投影し、
前記回路形成用レジスト膜を現像して、前記ウェハ上に複数のレジストパターンを形成し、
前記複数のレジストパターンを用いて、前記ウェハ上に複数の回路パターンを形成し、
前記フォトマスクの設計データから、前記複数の回路パターンのそれぞれの予測反射率を算出し、
前記複数の回路パターン上に回路上レジスト膜を形成し、
前記複数の回路パターンのそれぞれの上の前記回路上レジスト膜の複数の検査領域毎に、前記予測反射率に基づいて照射条件を変化させながら検査光を照射して、前記回路上レジスト膜を露光する露光装置の投影光学系に対する前記回路上レジスト膜の表面位置を検出し、
前記投影光学系の焦点に前記表面位置を移動させ、前記回路上レジスト膜を露光すること
を備えることを特徴とする露光方法。 - 前記予測反射率を算出することは、前記フォトマスクの設計データから、前記複数のマスクパターンのそれぞれの透過率を算出することを備えることを特徴とする請求項2に記載の露光方法。
- 前記照射条件は、前記検査光の光強度を含むことを特徴とする請求項2又は3に記載の露光方法。
- 前記照射条件は、前記複数の検査領域のそれぞれに対する前記検査光の入射角を含むことを特徴とする請求項2乃至4のいずれか1項に記載の露光方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006278071A JP4846510B2 (ja) | 2006-10-11 | 2006-10-11 | 表面位置計測システム及び露光方法 |
US11/907,190 US7710583B2 (en) | 2006-10-11 | 2007-10-10 | Surface position measuring system, exposure method and semiconductor device manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006278071A JP4846510B2 (ja) | 2006-10-11 | 2006-10-11 | 表面位置計測システム及び露光方法 |
Publications (2)
Publication Number | Publication Date |
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JP2008098383A JP2008098383A (ja) | 2008-04-24 |
JP4846510B2 true JP4846510B2 (ja) | 2011-12-28 |
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JP2006278071A Expired - Fee Related JP4846510B2 (ja) | 2006-10-11 | 2006-10-11 | 表面位置計測システム及び露光方法 |
Country Status (2)
Country | Link |
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US (1) | US7710583B2 (ja) |
JP (1) | JP4846510B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9459093B2 (en) | 2014-02-20 | 2016-10-04 | Kabushiki Kaisha Toshiba | Deflection measuring device and deflection measuring method |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140022858A (ko) * | 2011-04-01 | 2014-02-25 | 가부시키가이샤 니콘 | 형상 측정 장치, 형상 측정 방법, 및 구조물의 제조 방법 |
US10126252B2 (en) * | 2013-04-29 | 2018-11-13 | Cyberoptics Corporation | Enhanced illumination control for three-dimensional imaging |
JP6474655B2 (ja) * | 2014-09-30 | 2019-02-27 | エイブリック株式会社 | レチクル透過率測定方法、投影露光装置および投影露光方法 |
KR102441581B1 (ko) * | 2015-06-03 | 2022-09-07 | 삼성전자주식회사 | 표면 검사 방법 및 이를 이용한 포토 마스크의 검사 방법 |
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JP3158446B2 (ja) * | 1990-12-13 | 2001-04-23 | 株式会社ニコン | 表面位置検出装置及び表面位置検出方法、並びに露光装置、露光方法及び半導体製造方法 |
US5311288A (en) * | 1992-07-06 | 1994-05-10 | Opal Technologies Ltd. | Method and apparatus for detecting surface deviations from a reference plane |
JP3376219B2 (ja) * | 1996-08-22 | 2003-02-10 | キヤノン株式会社 | 面位置検出装置および方法 |
US6559465B1 (en) * | 1996-08-02 | 2003-05-06 | Canon Kabushiki Kaisha | Surface position detecting method having a detection timing determination |
JPH10239015A (ja) * | 1997-02-27 | 1998-09-11 | Nikon Corp | 表面位置検出装置 |
KR100303057B1 (ko) * | 1999-01-22 | 2001-09-26 | 윤종용 | 노광장치의 포커싱 방법 및 시스템 |
JP3927774B2 (ja) * | 2000-03-21 | 2007-06-13 | キヤノン株式会社 | 計測方法及びそれを用いた投影露光装置 |
JP2002334826A (ja) | 2001-05-09 | 2002-11-22 | Canon Inc | 露光方法、面位置合わせ方法、露光装置及びデバイス製造方法 |
JP2006269669A (ja) * | 2005-03-23 | 2006-10-05 | Canon Inc | 計測装置及び計測方法、露光装置並びにデバイス製造方法 |
JP5622068B2 (ja) * | 2005-11-15 | 2014-11-12 | 株式会社ニコン | 面位置検出装置、露光装置、およびデバイスの製造方法 |
US8068211B2 (en) * | 2007-07-06 | 2011-11-29 | Canon Kabushiki Kaisha | Exposure apparatus and method for manufacturing device |
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2006
- 2006-10-11 JP JP2006278071A patent/JP4846510B2/ja not_active Expired - Fee Related
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2007
- 2007-10-10 US US11/907,190 patent/US7710583B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9459093B2 (en) | 2014-02-20 | 2016-10-04 | Kabushiki Kaisha Toshiba | Deflection measuring device and deflection measuring method |
Also Published As
Publication number | Publication date |
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US20080100843A1 (en) | 2008-05-01 |
US7710583B2 (en) | 2010-05-04 |
JP2008098383A (ja) | 2008-04-24 |
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