TW200943538A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
TW200943538A
TW200943538A TW098102789A TW98102789A TW200943538A TW 200943538 A TW200943538 A TW 200943538A TW 098102789 A TW098102789 A TW 098102789A TW 98102789 A TW98102789 A TW 98102789A TW 200943538 A TW200943538 A TW 200943538A
Authority
TW
Taiwan
Prior art keywords
active region
silicon layer
sram
planar silicon
storage device
Prior art date
Application number
TW098102789A
Other languages
English (en)
Inventor
Fujio Masuoka
Shintaro Arai
Original Assignee
Unisantis Electronics Jp Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisantis Electronics Jp Ltd filed Critical Unisantis Electronics Jp Ltd
Publication of TW200943538A publication Critical patent/TW200943538A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
TW098102789A 2008-01-29 2009-01-23 Semiconductor storage device TW200943538A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2008/051302 WO2009095999A1 (ja) 2008-01-29 2008-01-29 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW200943538A true TW200943538A (en) 2009-10-16

Family

ID=40912368

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098102789A TW200943538A (en) 2008-01-29 2009-01-23 Semiconductor storage device

Country Status (5)

Country Link
EP (1) EP2239770B1 (zh)
KR (1) KR101182025B1 (zh)
CN (1) CN101933137B (zh)
TW (1) TW200943538A (zh)
WO (2) WO2009095999A1 (zh)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8183628B2 (en) 2007-10-29 2012-05-22 Unisantis Electronics Singapore Pte Ltd. Semiconductor structure and method of fabricating the semiconductor structure
US8598650B2 (en) 2008-01-29 2013-12-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
JP5317343B2 (ja) 2009-04-28 2013-10-16 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
US8378425B2 (en) 2008-01-29 2013-02-19 Unisantis Electronics Singapore Pte Ltd. Semiconductor storage device
JP5524547B2 (ja) * 2009-09-14 2014-06-18 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体記憶装置
JP4987926B2 (ja) 2009-09-16 2012-08-01 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
JP2011066109A (ja) 2009-09-16 2011-03-31 Unisantis Electronics Japan Ltd 半導体記憶装置
JP5356970B2 (ja) * 2009-10-01 2013-12-04 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
KR101211442B1 (ko) 2010-03-08 2012-12-12 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 고체 촬상 장치
US8487357B2 (en) 2010-03-12 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high sensitivity and high pixel density
JP2011216657A (ja) 2010-03-31 2011-10-27 Unisantis Electronics Japan Ltd 半導体装置
JP5066590B2 (ja) 2010-06-09 2012-11-07 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置とその製造方法
JP5087655B2 (ja) 2010-06-15 2012-12-05 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5433788B2 (ja) * 2010-08-05 2014-03-05 ルネサスエレクトロニクス株式会社 半導体装置
US8564034B2 (en) 2011-09-08 2013-10-22 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8669601B2 (en) 2011-09-15 2014-03-11 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8772175B2 (en) 2011-12-19 2014-07-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
CN103370781A (zh) * 2012-02-15 2013-10-23 新加坡优尼山帝斯电子私人有限公司 半导体存储器件
US8748938B2 (en) 2012-02-20 2014-06-10 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
JP5312656B2 (ja) * 2012-08-29 2013-10-09 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
KR20160018221A (ko) * 2014-08-08 2016-02-17 에스케이하이닉스 주식회사 3차원 반도체 집적 회로 장치 및 그 제조방법
KR102556850B1 (ko) * 2017-01-19 2023-07-18 삼성디스플레이 주식회사 트랜지스터 표시판 및 그 제조 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2703970B2 (ja) 1989-01-17 1998-01-26 株式会社東芝 Ｍｏｓ型半導体装置
JPH04234166A (ja) * 1990-12-28 1992-08-21 Texas Instr Japan Ltd 半導体集積回路装置
JP2748072B2 (ja) * 1992-07-03 1998-05-06 三菱電機株式会社 半導体装置およびその製造方法
JPH06237003A (ja) * 1993-02-10 1994-08-23 Hitachi Ltd 半導体記憶装置およびその製造方法
JP3403231B2 (ja) * 1993-05-12 2003-05-06 三菱電機株式会社 半導体装置およびその製造方法
JPH1079482A (ja) * 1996-08-09 1998-03-24 Rai Hai 超高密度集積回路
JP3467416B2 (ja) * 1998-04-20 2003-11-17 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置及びその製造方法
US6461900B1 (en) * 2001-10-18 2002-10-08 Chartered Semiconductor Manufacturing Ltd. Method to form a self-aligned CMOS inverter using vertical device integration
JP2004096065A (ja) * 2002-07-08 2004-03-25 Renesas Technology Corp 半導体記憶装置およびその製造方法
US7138685B2 (en) * 2002-12-11 2006-11-21 International Business Machines Corporation Vertical MOSFET SRAM cell
JP4416474B2 (ja) * 2003-10-28 2010-02-17 株式会社ルネサステクノロジ 半導体記憶装置
JP5114968B2 (ja) * 2007-02-20 2013-01-09 富士通セミコンダクター株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
KR20100109953A (ko) 2010-10-11
CN101933137B (zh) 2013-06-05
EP2239770B1 (en) 2013-05-15
CN101933137A (zh) 2010-12-29
EP2239770A4 (en) 2011-03-16
WO2009095999A1 (ja) 2009-08-06
KR101182025B1 (ko) 2012-09-11
WO2009096466A1 (ja) 2009-08-06
EP2239770A1 (en) 2010-10-13

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