TW200943538A - Semiconductor storage device - Google Patents
Semiconductor storage deviceInfo
- Publication number
- TW200943538A TW200943538A TW098102789A TW98102789A TW200943538A TW 200943538 A TW200943538 A TW 200943538A TW 098102789 A TW098102789 A TW 098102789A TW 98102789 A TW98102789 A TW 98102789A TW 200943538 A TW200943538 A TW 200943538A
- Authority
- TW
- Taiwan
- Prior art keywords
- active region
- silicon layer
- sram
- planar silicon
- storage device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2008/051302 WO2009095999A1 (ja) | 2008-01-29 | 2008-01-29 | 半導体記憶装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200943538A true TW200943538A (en) | 2009-10-16 |
Family
ID=40912368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098102789A TW200943538A (en) | 2008-01-29 | 2009-01-23 | Semiconductor storage device |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2239770B1 (zh) |
| KR (1) | KR101182025B1 (zh) |
| CN (1) | CN101933137B (zh) |
| TW (1) | TW200943538A (zh) |
| WO (2) | WO2009095999A1 (zh) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8183628B2 (en) | 2007-10-29 | 2012-05-22 | Unisantis Electronics Singapore Pte Ltd. | Semiconductor structure and method of fabricating the semiconductor structure |
| JP5317343B2 (ja) | 2009-04-28 | 2013-10-16 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置及びその製造方法 |
| US8378425B2 (en) | 2008-01-29 | 2013-02-19 | Unisantis Electronics Singapore Pte Ltd. | Semiconductor storage device |
| US8598650B2 (en) | 2008-01-29 | 2013-12-03 | Unisantis Electronics Singapore Pte Ltd. | Semiconductor device and production method therefor |
| JP5524547B2 (ja) * | 2009-09-14 | 2014-06-18 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体記憶装置 |
| JP2011066109A (ja) * | 2009-09-16 | 2011-03-31 | Unisantis Electronics Japan Ltd | 半導体記憶装置 |
| JP4987926B2 (ja) * | 2009-09-16 | 2012-08-01 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
| JP5356970B2 (ja) * | 2009-10-01 | 2013-12-04 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
| WO2011111662A1 (ja) | 2010-03-08 | 2011-09-15 | 日本ユニサンティスエレクトロニクス株式会社 | 固体撮像装置 |
| US8487357B2 (en) | 2010-03-12 | 2013-07-16 | Unisantis Electronics Singapore Pte Ltd. | Solid state imaging device having high sensitivity and high pixel density |
| JP2011216657A (ja) | 2010-03-31 | 2011-10-27 | Unisantis Electronics Japan Ltd | 半導体装置 |
| JP5066590B2 (ja) | 2010-06-09 | 2012-11-07 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置とその製造方法 |
| JP5087655B2 (ja) | 2010-06-15 | 2012-12-05 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置及びその製造方法 |
| JP5433788B2 (ja) * | 2010-08-05 | 2014-03-05 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US8564034B2 (en) | 2011-09-08 | 2013-10-22 | Unisantis Electronics Singapore Pte. Ltd. | Solid-state imaging device |
| US8669601B2 (en) | 2011-09-15 | 2014-03-11 | Unisantis Electronics Singapore Pte. Ltd. | Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor |
| US8772175B2 (en) | 2011-12-19 | 2014-07-08 | Unisantis Electronics Singapore Pte. Ltd. | Method for manufacturing semiconductor device and semiconductor device |
| US8916478B2 (en) | 2011-12-19 | 2014-12-23 | Unisantis Electronics Singapore Pte. Ltd. | Method for manufacturing semiconductor device and semiconductor device |
| CN103370781A (zh) * | 2012-02-15 | 2013-10-23 | 新加坡优尼山帝斯电子私人有限公司 | 半导体存储器件 |
| US8748938B2 (en) | 2012-02-20 | 2014-06-10 | Unisantis Electronics Singapore Pte. Ltd. | Solid-state imaging device |
| JP5312656B2 (ja) * | 2012-08-29 | 2013-10-09 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
| KR20160018221A (ko) * | 2014-08-08 | 2016-02-17 | 에스케이하이닉스 주식회사 | 3차원 반도체 집적 회로 장치 및 그 제조방법 |
| KR102556850B1 (ko) * | 2017-01-19 | 2023-07-18 | 삼성디스플레이 주식회사 | 트랜지스터 표시판 및 그 제조 방법 |
| WO2020202554A1 (ja) * | 2019-04-05 | 2020-10-08 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 柱状半導体装置と、その製造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2703970B2 (ja) | 1989-01-17 | 1998-01-26 | 株式会社東芝 | Ｍｏｓ型半導体装置 |
| JPH04234166A (ja) * | 1990-12-28 | 1992-08-21 | Texas Instr Japan Ltd | 半導体集積回路装置 |
| JP2748072B2 (ja) * | 1992-07-03 | 1998-05-06 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JPH06237003A (ja) * | 1993-02-10 | 1994-08-23 | Hitachi Ltd | 半導体記憶装置およびその製造方法 |
| JP3403231B2 (ja) * | 1993-05-12 | 2003-05-06 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JPH1079482A (ja) * | 1996-08-09 | 1998-03-24 | Rai Hai | 超高密度集積回路 |
| JP3467416B2 (ja) * | 1998-04-20 | 2003-11-17 | Ｎｅｃエレクトロニクス株式会社 | 半導体記憶装置及びその製造方法 |
| US6461900B1 (en) * | 2001-10-18 | 2002-10-08 | Chartered Semiconductor Manufacturing Ltd. | Method to form a self-aligned CMOS inverter using vertical device integration |
| JP2004096065A (ja) * | 2002-07-08 | 2004-03-25 | Renesas Technology Corp | 半導体記憶装置およびその製造方法 |
| US7138685B2 (en) * | 2002-12-11 | 2006-11-21 | International Business Machines Corporation | Vertical MOSFET SRAM cell |
| JP4416474B2 (ja) * | 2003-10-28 | 2010-02-17 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
| JP5114968B2 (ja) * | 2007-02-20 | 2013-01-09 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
-
2008
- 2008-01-29 WO PCT/JP2008/051302 patent/WO2009095999A1/ja active Application Filing
-
2009
- 2009-01-23 TW TW098102789A patent/TW200943538A/zh unknown
- 2009-01-29 WO PCT/JP2009/051461 patent/WO2009096466A1/ja active Application Filing
- 2009-01-29 EP EP09705485.2A patent/EP2239770B1/en not_active Not-in-force
- 2009-01-29 CN CN200980103505.8A patent/CN101933137B/zh not_active Expired - Fee Related
- 2009-01-29 KR KR1020107017794A patent/KR101182025B1/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| EP2239770A4 (en) | 2011-03-16 |
| EP2239770B1 (en) | 2013-05-15 |
| KR20100109953A (ko) | 2010-10-11 |
| EP2239770A1 (en) | 2010-10-13 |
| WO2009096466A1 (ja) | 2009-08-06 |
| CN101933137A (zh) | 2010-12-29 |
| WO2009095999A1 (ja) | 2009-08-06 |
| KR101182025B1 (ko) | 2012-09-11 |
| CN101933137B (zh) | 2013-06-05 |
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