TW200939346A - Elimination of photoresis material collapse and poisoning in 45-nm feature size using dry or immersion lithography - Google Patents

Elimination of photoresis material collapse and poisoning in 45-nm feature size using dry or immersion lithography Download PDF

Info

Publication number
TW200939346A
TW200939346A TW098103572A TW98103572A TW200939346A TW 200939346 A TW200939346 A TW 200939346A TW 098103572 A TW098103572 A TW 098103572A TW 98103572 A TW98103572 A TW 98103572A TW 200939346 A TW200939346 A TW 200939346A
Authority
TW
Taiwan
Prior art keywords
layer
adhesion promoting
deposited
organic adhesion
photoresist
Prior art date
Application number
TW098103572A
Other languages
English (en)
Chinese (zh)
Inventor
Sudha Rathi
Eui-Kyoon Kim
Bok Hoen Kim
Martin Jay Seamons
Francimar C Schmitt
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200939346A publication Critical patent/TW200939346A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW098103572A 2008-02-04 2009-02-04 Elimination of photoresis material collapse and poisoning in 45-nm feature size using dry or immersion lithography TW200939346A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/025,615 US20090197086A1 (en) 2008-02-04 2008-02-04 Elimination of photoresist material collapse and poisoning in 45-nm feature size using dry or immersion lithography

Publications (1)

Publication Number Publication Date
TW200939346A true TW200939346A (en) 2009-09-16

Family

ID=40931981

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098103572A TW200939346A (en) 2008-02-04 2009-02-04 Elimination of photoresis material collapse and poisoning in 45-nm feature size using dry or immersion lithography

Country Status (6)

Country Link
US (1) US20090197086A1 (OSRAM)
JP (1) JP2011511476A (OSRAM)
KR (1) KR20100124265A (OSRAM)
CN (1) CN101939818A (OSRAM)
TW (1) TW200939346A (OSRAM)
WO (1) WO2009099713A2 (OSRAM)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090104541A1 (en) * 2007-10-23 2009-04-23 Eui Kyoon Kim Plasma surface treatment to prevent pattern collapse in immersion lithography
EP2396810B1 (en) * 2009-02-11 2016-06-08 NewSouth Innovations Pty Limited Photovoltaic device structure and method
EP2315234A1 (en) * 2009-10-20 2011-04-27 Applied Materials, Inc. Method and installation for producing an anti-reflection and/or passivation coating for semiconductor devices
CN102543715A (zh) * 2012-02-28 2012-07-04 上海华力微电子有限公司 无氮介电抗反射薄膜的制作方法
CN103794485A (zh) * 2012-11-02 2014-05-14 中芯国际集成电路制造(上海)有限公司 多晶硅结构的形成方法
JP2014202969A (ja) * 2013-04-05 2014-10-27 富士フイルム株式会社 パターン形成方法、電子デバイス及びその製造方法
US9224783B2 (en) * 2013-12-23 2015-12-29 Intermolecular, Inc. Plasma densification of dielectrics for improved dielectric loss tangent
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
DE102017122708A1 (de) * 2017-09-29 2019-04-04 Psc Technologies Gmbh Verfahren zur Herstellung einer Siliciumcarbid aufweisenden stickstofffreien Schicht
WO2019125952A1 (en) * 2017-12-18 2019-06-27 Tokyo Electron Limited Plasma treatment method to enhance surface adhesion for lithography
CN112368645B (zh) 2018-06-13 2024-07-26 布鲁尔科技公司 用于euv光刻的粘附层
US11921427B2 (en) 2018-11-14 2024-03-05 Lam Research Corporation Methods for making hard masks useful in next-generation lithography
CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
KR20210149893A (ko) 2019-04-30 2021-12-09 램 리써치 코포레이션 극자외선 리소그래피 레지스트 개선을 위한 원자 층 에칭 및 선택적인 증착 프로세스
TWI837391B (zh) 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
JP7589179B2 (ja) 2019-06-28 2024-11-25 ラム リサーチ コーポレーション 金属含有レジストのリソグラフィ性能を向上させるためのベーキング方法
EP4651192A3 (en) 2020-01-15 2026-03-04 Lam Research Corporation Underlayer for photoresist adhesion and dose reduction
KR20220148249A (ko) 2020-02-28 2022-11-04 램 리써치 코포레이션 EUV 패터닝의 결함 감소를 위한 다층 하드마스크 (multi-layer hardmask)
WO2021202681A1 (en) 2020-04-03 2021-10-07 Lam Research Corporation Pre-exposure photoresist curing to enhance euv lithographic performance
KR20230041688A (ko) * 2020-06-22 2023-03-24 램 리써치 코포레이션 금속-함유 포토레지스트 (photoresist) 증착을 위한 표면 개질
EP4078292A4 (en) 2020-07-07 2023-11-22 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
US20230107357A1 (en) 2020-11-13 2023-04-06 Lam Research Corporation Process tool for dry removal of photoresist
JP7681106B2 (ja) 2020-12-08 2025-05-21 ラム リサーチ コーポレーション 有機蒸気によるフォトレジストの現像
KR20240160248A (ko) 2022-07-01 2024-11-08 램 리써치 코포레이션 에칭 정지 억제를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
US12474640B2 (en) 2023-03-17 2025-11-18 Lam Research Corporation Integration of dry development and etch processes for EUV patterning in a single process chamber
KR20250069677A (ko) 2023-07-27 2025-05-19 램 리써치 코포레이션 금속-함유 포토레지스트에 대한 올-인-원 건식 현상

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2694097B2 (ja) * 1992-03-03 1997-12-24 インターナショナル・ビジネス・マシーンズ・コーポレイション 反射防止コーティング組成物
JP3128335B2 (ja) * 1992-07-17 2001-01-29 株式会社東芝 パターン形成方法
JP3392231B2 (ja) * 1994-09-09 2003-03-31 沖電気工業株式会社 パターン形成方法
JP3422580B2 (ja) * 1994-12-16 2003-06-30 三菱電機株式会社 半導体装置の製造方法
US6030541A (en) * 1998-06-19 2000-02-29 International Business Machines Corporation Process for defining a pattern using an anti-reflective coating and structure therefor
US6440878B1 (en) * 2000-04-03 2002-08-27 Sharp Laboratories Of America, Inc. Method to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon using a silicon carbide adhesion promoter layer
JP2002194547A (ja) * 2000-06-08 2002-07-10 Applied Materials Inc アモルファスカーボン層の堆積方法
US6580170B2 (en) * 2000-06-22 2003-06-17 Texas Instruments Incorporated Semiconductor device protective overcoat with enhanced adhesion to polymeric materials
US6368924B1 (en) * 2000-10-31 2002-04-09 Motorola, Inc. Amorphous carbon layer for improved adhesion of photoresist and method of fabrication
JP3871029B2 (ja) * 2001-10-18 2007-01-24 信越化学工業株式会社 化学増幅型レジストパターン用表面処理剤及びパターン形成方法
US7226853B2 (en) * 2001-12-26 2007-06-05 Applied Materials, Inc. Method of forming a dual damascene structure utilizing a three layer hard mask structure
US6803313B2 (en) * 2002-09-27 2004-10-12 Advanced Micro Devices, Inc. Method for forming a hardmask employing multiple independently formed layers of a pecvd material to reduce pinholes
TW200503066A (en) * 2003-07-07 2005-01-16 Macronix Int Co Ltd Process for reworking semiconductor patterned photoresist layer
US6972255B2 (en) * 2003-07-28 2005-12-06 Freescale Semiconductor, Inc. Semiconductor device having an organic anti-reflective coating (ARC) and method therefor
US6872014B1 (en) * 2003-11-21 2005-03-29 Asml Netherlands B.V. Method for developing a photoresist pattern
US20050118541A1 (en) * 2003-11-28 2005-06-02 Applied Materials, Inc. Maintenance of photoresist adhesion and activity on the surface of dielectric ARCS for 90 nm feature sizes
US7285853B2 (en) * 2005-02-17 2007-10-23 Taiwan Semiconductor Manufacturing Co., Ltd. Multilayer anti-reflective coating for semiconductor lithography and the method for forming the same
US7253118B2 (en) * 2005-03-15 2007-08-07 Micron Technology, Inc. Pitch reduced patterns relative to photolithography features
DE102006046364A1 (de) * 2006-09-29 2008-04-03 Advanced Micro Devices, Inc., Sunnyvale ARC-Schicht mit geringerer Neigung zum Ablösen und Verfahren zur Herstellung derselben
US20090104541A1 (en) * 2007-10-23 2009-04-23 Eui Kyoon Kim Plasma surface treatment to prevent pattern collapse in immersion lithography

Also Published As

Publication number Publication date
CN101939818A (zh) 2011-01-05
WO2009099713A2 (en) 2009-08-13
JP2011511476A (ja) 2011-04-07
US20090197086A1 (en) 2009-08-06
WO2009099713A3 (en) 2009-10-08
KR20100124265A (ko) 2010-11-26

Similar Documents

Publication Publication Date Title
US8465903B2 (en) Radiation patternable CVD film
CN101939818A (zh) 以干微影或浸润式微影工艺来防止45-纳米特征结构尺寸中光阻材料的崩塌和毒化
CN101981659B (zh) 沉积具有改进密度与阶梯覆盖的非晶碳膜的方法
TWI781368B (zh) 處理基板的方法
KR101098632B1 (ko) 비정질 탄소 막의 ｃｖｄ 증착용 액체 전구체
CN101480110B (zh) 具有改进的密度和阶梯覆盖率的无定形碳膜的沉积方法
KR101161912B1 (ko) 비결정질 탄소 층의 고온 증착 방법
CN101312126B (zh) 形成非晶碳膜的方法和使用该方法制造半导体装置的方法
KR101046506B1 (ko) 이머전 리소그라피에서 패턴 붕괴를 방지하기 위한 플라즈마 표면처리
KR101003475B1 (ko) 포토레지스트 접착 및 재생 일관성을 개선하기 위한 수소처리
CN102971837A (zh) 氮掺杂的非晶碳硬掩模
CN101174099A (zh) 用于高数值孔径和浸润式光刻的分级式抗反射涂层
US20050199585A1 (en) Method of depositing an amorphous carbon film for metal etch hardmask application
TW201828339A (zh) 於半導體裝置製造中高品質氧化矽之低溫形成
TW200947154A (en) Method of forming thin film pattern for semiconductor device and apparatus for the same
US20220382159A1 (en) Metalorganic films for extreme ultraviolet patterning
KR20080100064A (ko) 비정질 탄소막 형성 방법 및 이를 이용한 반도체 소자의제조 방법