JP2011511476A - 乾式または液浸リソグラフィを用いる45nmフィーチャサイズでの、フォトレジスト材料の崩壊およびポイゾニングの解消 - Google Patents
乾式または液浸リソグラフィを用いる45nmフィーチャサイズでの、フォトレジスト材料の崩壊およびポイゾニングの解消 Download PDFInfo
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- JP2011511476A JP2011511476A JP2010545914A JP2010545914A JP2011511476A JP 2011511476 A JP2011511476 A JP 2011511476A JP 2010545914 A JP2010545914 A JP 2010545914A JP 2010545914 A JP2010545914 A JP 2010545914A JP 2011511476 A JP2011511476 A JP 2011511476A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (15)
- 基板を処理する方法であって、
前記基板の表面上に反射防止被覆層を堆積させること、
前記反射防止被覆層上に有機接着促進層を堆積させること、および
前記有機接着促進層上にレジスト材料を堆積させること
を含む方法。 - 前記反射防止被覆層が、シリコンリッチ酸化物、窒化珪素、酸窒化珪素、炭化珪素、酸炭化珪素、窒素ドープ炭化珪素、窒素ドープ酸炭化珪素、およびそれらの組合せからなる群から選択される誘電体反射防止材料を備える、請求項1に記載の方法。
- 前記有機接着促進層が非晶質炭素材料を含む、請求項1に記載の方法。
- 前記基板表面が非晶質炭素層をさらに備え、前記反射防止被覆層が、前記非晶質炭素層上に堆積される、請求項1に記載の方法。
- 前記反射防止被覆層上に、前記有機接着促進層を堆積させる前に、酸化物キャップ層を堆積させることをさらに含む、請求項1に記載の方法。
- 前記有機接着促進層が、炭化水素前駆体のプラズマ化学気相成長によって堆積される、請求項1に記載の方法。
- 前記レジスト材料を堆積させる前に、前記有機接着促進層をヘキサメチルジシラザンに曝すことをさらに含む、請求項1に記載の方法。
- 前記有機接着促進層が、炭素−炭素単結合、炭素−炭素二重結合、またはそれらの組合せを有する、請求項1に記載の方法。
- 前記反射防止被覆層および前記有機接着促進層が、同じ処理チャンバまたは処理システム内でインサイチュで堆積される、請求項1に記載の方法。
- 前記レジスト材料を堆積させる前に、前記有機接着促進層をヘキサメチルジシラザンに曝すことをさらに含む、請求項1に記載の方法。
- 誘電体基板と、
前記誘電体層上に堆積された非晶質炭素層と、
前記非晶質炭素層上に堆積された反射防止被覆層と、
前記反射防止被覆層上に堆積された有機接着促進層と、
前記有機接着促進層上に堆積されたレジスト材料と
を備える、半導体基板構造。 - 前記有機接着促進層と前記レジスト材料との間に形成されたヘキサメチルジシラザン材料をさらに備える、請求項11に記載の半導体基板構造。
- 前記有機接着促進層が非晶質炭素材料を含む、請求項11に記載の半導体基板構造。
- 前記反射防止被覆層と前記有機接着促進層との間に配設された酸化物キャップ層をさらに備える、請求項11に記載の半導体基板構造。
- 前記有機接着促進層が、炭素−炭素単結合、炭素−炭素二重結合、またはそれらの組合せを有する、請求項11に記載の半導体基板構造。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/025,615 US20090197086A1 (en) | 2008-02-04 | 2008-02-04 | Elimination of photoresist material collapse and poisoning in 45-nm feature size using dry or immersion lithography |
PCT/US2009/030709 WO2009099713A2 (en) | 2008-02-04 | 2009-01-12 | Elimination of photoresist material collapse and poisoning in 45-nm feature size using dry or immersion lithography |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011511476A true JP2011511476A (ja) | 2011-04-07 |
JP2011511476A5 JP2011511476A5 (ja) | 2012-03-01 |
Family
ID=40931981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010545914A Pending JP2011511476A (ja) | 2008-02-04 | 2009-01-12 | 乾式または液浸リソグラフィを用いる45nmフィーチャサイズでの、フォトレジスト材料の崩壊およびポイゾニングの解消 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20090197086A1 (ja) |
JP (1) | JP2011511476A (ja) |
KR (1) | KR20100124265A (ja) |
CN (1) | CN101939818A (ja) |
TW (1) | TW200939346A (ja) |
WO (1) | WO2009099713A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014162983A1 (ja) * | 2013-04-05 | 2014-10-09 | 富士フイルム株式会社 | パターン形成方法、電子デバイス及びその製造方法 |
Families Citing this family (12)
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---|---|---|---|---|
US20090104541A1 (en) * | 2007-10-23 | 2009-04-23 | Eui Kyoon Kim | Plasma surface treatment to prevent pattern collapse in immersion lithography |
KR101622714B1 (ko) | 2009-02-11 | 2016-05-19 | 뉴사우스 이노베이션즈 피티와이 리미티드 | 광전 디바이스 구조 및 방법 |
EP2315234A1 (en) * | 2009-10-20 | 2011-04-27 | Applied Materials, Inc. | Method and installation for producing an anti-reflection and/or passivation coating for semiconductor devices |
CN102543715A (zh) * | 2012-02-28 | 2012-07-04 | 上海华力微电子有限公司 | 无氮介电抗反射薄膜的制作方法 |
CN103794485A (zh) * | 2012-11-02 | 2014-05-14 | 中芯国际集成电路制造(上海)有限公司 | 多晶硅结构的形成方法 |
US9224783B2 (en) * | 2013-12-23 | 2015-12-29 | Intermolecular, Inc. | Plasma densification of dielectrics for improved dielectric loss tangent |
DE102017122708A1 (de) * | 2017-09-29 | 2019-04-04 | Psc Technologies Gmbh | Verfahren zur Herstellung einer Siliciumcarbid aufweisenden stickstofffreien Schicht |
KR102632799B1 (ko) | 2017-12-18 | 2024-02-01 | 도쿄엘렉트론가부시키가이샤 | 리소그래피를 위한 표면 접착력을 강화하기 위한 플라즈마 처리 방법 |
EP3807721A4 (en) | 2018-06-13 | 2022-04-13 | Brewer Science, Inc. | ADHESION LAYERS FOR EXTREME UV LITHOGRAPHY |
US11921427B2 (en) | 2018-11-14 | 2024-03-05 | Lam Research Corporation | Methods for making hard masks useful in next-generation lithography |
EP3908882A4 (en) | 2020-01-15 | 2022-03-16 | Lam Research Corporation | UNDERCOAT FOR PHOTOCOAT ADHESION AND DOSE REDUCTION |
US20230230811A1 (en) * | 2020-06-22 | 2023-07-20 | Lam Research Corporation | Surface modification for metal-containing photoresist deposition |
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JPH0635206A (ja) * | 1992-07-17 | 1994-02-10 | Toshiba Corp | パターン形成方法 |
JPH0876352A (ja) * | 1994-09-09 | 1996-03-22 | Oki Electric Ind Co Ltd | パターン形成方法 |
JPH08172039A (ja) * | 1994-12-16 | 1996-07-02 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2003122018A (ja) * | 2001-10-18 | 2003-04-25 | Shin Etsu Chem Co Ltd | 化学増幅型レジストパターン用表面処理剤及びパターン形成方法 |
JP2004513515A (ja) * | 2000-10-31 | 2004-04-30 | モトローラ・インコーポレイテッド | ホトレジストの改良形接着用アモルファス炭素層 |
US20050048771A1 (en) * | 2002-09-27 | 2005-03-03 | Advanced Micro Devices, Inc. | Hardmask employing multiple layers of silicon oxynitride |
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-
2008
- 2008-02-04 US US12/025,615 patent/US20090197086A1/en not_active Abandoned
-
2009
- 2009-01-12 WO PCT/US2009/030709 patent/WO2009099713A2/en active Application Filing
- 2009-01-12 KR KR1020107019452A patent/KR20100124265A/ko not_active Application Discontinuation
- 2009-01-12 JP JP2010545914A patent/JP2011511476A/ja active Pending
- 2009-01-12 CN CN200980104622.6A patent/CN101939818A/zh active Pending
- 2009-02-04 TW TW098103572A patent/TW200939346A/zh unknown
Patent Citations (6)
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JPH0635206A (ja) * | 1992-07-17 | 1994-02-10 | Toshiba Corp | パターン形成方法 |
JPH0876352A (ja) * | 1994-09-09 | 1996-03-22 | Oki Electric Ind Co Ltd | パターン形成方法 |
JPH08172039A (ja) * | 1994-12-16 | 1996-07-02 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2004513515A (ja) * | 2000-10-31 | 2004-04-30 | モトローラ・インコーポレイテッド | ホトレジストの改良形接着用アモルファス炭素層 |
JP2003122018A (ja) * | 2001-10-18 | 2003-04-25 | Shin Etsu Chem Co Ltd | 化学増幅型レジストパターン用表面処理剤及びパターン形成方法 |
US20050048771A1 (en) * | 2002-09-27 | 2005-03-03 | Advanced Micro Devices, Inc. | Hardmask employing multiple layers of silicon oxynitride |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014162983A1 (ja) * | 2013-04-05 | 2014-10-09 | 富士フイルム株式会社 | パターン形成方法、電子デバイス及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101939818A (zh) | 2011-01-05 |
KR20100124265A (ko) | 2010-11-26 |
TW200939346A (en) | 2009-09-16 |
US20090197086A1 (en) | 2009-08-06 |
WO2009099713A2 (en) | 2009-08-13 |
WO2009099713A3 (en) | 2009-10-08 |
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