CN101939818A - 以干微影或浸润式微影工艺来防止45-纳米特征结构尺寸中光阻材料的崩塌和毒化 - Google Patents

以干微影或浸润式微影工艺来防止45-纳米特征结构尺寸中光阻材料的崩塌和毒化 Download PDF

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Publication number
CN101939818A
CN101939818A CN200980104622.6A CN200980104622A CN101939818A CN 101939818 A CN101939818 A CN 101939818A CN 200980104622 A CN200980104622 A CN 200980104622A CN 101939818 A CN101939818 A CN 101939818A
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CN
China
Prior art keywords
layer
promoting layer
organic adhesion
deposited
adhesion promoting
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Pending
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CN200980104622.6A
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English (en)
Chinese (zh)
Inventor
S·拉斯
E·K·金
B·H·金
M·J·希蒙斯
F·C·斯米特
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Applied Materials Inc
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Applied Materials Inc
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Publication of CN101939818A publication Critical patent/CN101939818A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN200980104622.6A 2008-02-04 2009-01-12 以干微影或浸润式微影工艺来防止45-纳米特征结构尺寸中光阻材料的崩塌和毒化 Pending CN101939818A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/025,615 US20090197086A1 (en) 2008-02-04 2008-02-04 Elimination of photoresist material collapse and poisoning in 45-nm feature size using dry or immersion lithography
US12/025,615 2008-02-04
PCT/US2009/030709 WO2009099713A2 (en) 2008-02-04 2009-01-12 Elimination of photoresist material collapse and poisoning in 45-nm feature size using dry or immersion lithography

Publications (1)

Publication Number Publication Date
CN101939818A true CN101939818A (zh) 2011-01-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980104622.6A Pending CN101939818A (zh) 2008-02-04 2009-01-12 以干微影或浸润式微影工艺来防止45-纳米特征结构尺寸中光阻材料的崩塌和毒化

Country Status (6)

Country Link
US (1) US20090197086A1 (OSRAM)
JP (1) JP2011511476A (OSRAM)
KR (1) KR20100124265A (OSRAM)
CN (1) CN101939818A (OSRAM)
TW (1) TW200939346A (OSRAM)
WO (1) WO2009099713A2 (OSRAM)

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JP2014202969A (ja) * 2013-04-05 2014-10-27 富士フイルム株式会社 パターン形成方法、電子デバイス及びその製造方法
US9224783B2 (en) * 2013-12-23 2015-12-29 Intermolecular, Inc. Plasma densification of dielectrics for improved dielectric loss tangent
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
DE102017122708A1 (de) * 2017-09-29 2019-04-04 Psc Technologies Gmbh Verfahren zur Herstellung einer Siliciumcarbid aufweisenden stickstofffreien Schicht
WO2019125952A1 (en) * 2017-12-18 2019-06-27 Tokyo Electron Limited Plasma treatment method to enhance surface adhesion for lithography
CN112368645B (zh) 2018-06-13 2024-07-26 布鲁尔科技公司 用于euv光刻的粘附层
US11921427B2 (en) 2018-11-14 2024-03-05 Lam Research Corporation Methods for making hard masks useful in next-generation lithography
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TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
KR20210149893A (ko) 2019-04-30 2021-12-09 램 리써치 코포레이션 극자외선 리소그래피 레지스트 개선을 위한 원자 층 에칭 및 선택적인 증착 프로세스
TWI837391B (zh) 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
JP7589179B2 (ja) 2019-06-28 2024-11-25 ラム リサーチ コーポレーション 金属含有レジストのリソグラフィ性能を向上させるためのベーキング方法
EP4651192A3 (en) 2020-01-15 2026-03-04 Lam Research Corporation Underlayer for photoresist adhesion and dose reduction
KR20220148249A (ko) 2020-02-28 2022-11-04 램 리써치 코포레이션 EUV 패터닝의 결함 감소를 위한 다층 하드마스크 (multi-layer hardmask)
WO2021202681A1 (en) 2020-04-03 2021-10-07 Lam Research Corporation Pre-exposure photoresist curing to enhance euv lithographic performance
KR20230041688A (ko) * 2020-06-22 2023-03-24 램 리써치 코포레이션 금속-함유 포토레지스트 (photoresist) 증착을 위한 표면 개질
EP4078292A4 (en) 2020-07-07 2023-11-22 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
US20230107357A1 (en) 2020-11-13 2023-04-06 Lam Research Corporation Process tool for dry removal of photoresist
JP7681106B2 (ja) 2020-12-08 2025-05-21 ラム リサーチ コーポレーション 有機蒸気によるフォトレジストの現像
KR20240160248A (ko) 2022-07-01 2024-11-08 램 리써치 코포레이션 에칭 정지 억제를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103794485A (zh) * 2012-11-02 2014-05-14 中芯国际集成电路制造(上海)有限公司 多晶硅结构的形成方法

Also Published As

Publication number Publication date
WO2009099713A2 (en) 2009-08-13
JP2011511476A (ja) 2011-04-07
US20090197086A1 (en) 2009-08-06
WO2009099713A3 (en) 2009-10-08
KR20100124265A (ko) 2010-11-26
TW200939346A (en) 2009-09-16

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Address after: American California

Applicant after: Applied Materials Inc.

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Application publication date: 20110105