TW200929382A - Semiconductor device and method of fabricating the same - Google Patents
Semiconductor device and method of fabricating the same Download PDFInfo
- Publication number
- TW200929382A TW200929382A TW097149271A TW97149271A TW200929382A TW 200929382 A TW200929382 A TW 200929382A TW 097149271 A TW097149271 A TW 097149271A TW 97149271 A TW97149271 A TW 97149271A TW 200929382 A TW200929382 A TW 200929382A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- trench
- semiconductor substrate
- gate electrode
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 80
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000012535 impurity Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- 125000006850 spacer group Chemical group 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 13
- 150000004706 metal oxides Chemical class 0.000 description 13
- 150000004767 nitrides Chemical class 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 241000282320 Panthera leo Species 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- APSBXTVYXVQYAB-UHFFFAOYSA-M sodium docusate Chemical compound [Na+].CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC APSBXTVYXVQYAB-UHFFFAOYSA-M 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910021653 sulphate ion Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XGZGDYQRJKMWNM-UHFFFAOYSA-N tantalum tungsten Chemical compound [Ta][W][Ta] XGZGDYQRJKMWNM-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1037—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure and non-planar channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
200929382 六、發明說明: 【發明所屬之技術領域】 本發明是《於-種铸體裝置及絲造妓,特別是有關 於-種增長之通道長度辭物裝置及其製造方法。 【先前技術】 近年來半導體裝置朗在無線傳輪裝置料裝置上,其運作 ❺電[係在3伏特至5絲之間。因此,_個小型且高度整合的 導體裝置是業界極需要的。 ° 【發明内容】 鐾於以上的問題,本發明之目的在於提供_種可在高電壓運 作之高度整合的半導體裝置。 本發明所揭露之半導體裝置包括有-半導體基板、-閘極電 極,其具有難解導縣板上之—本體部,叹自本體部向下 ❹突丨之-凸_、及複數悔極級麵,設胁铸縣板中並 位在閘極電極之相對侧。 本發明所财之轉雜置之製造綠,齡驟包括:形成 -溝槽於—半導體基板上或半導體基板中、形成—_電極,且 :極電極具有設置於料縣板柏—本體部,及自本體部向下 突出之-凸出部;以及形成複數個細祕區於半導體基板中, 且源極/汲極區位在閘極電極之相對側。 本發明所揭露之半導體裝置更具有一通道長度,係設置㈣ 極電極之下部(例如’最低的表面)或是閘極電極下部的下方。 200929382 = 知具有最低平面_互補金屬氧化物半導體(CM0S) 晶體’本發明之通道長度藉由_電極之凸出部而增長。 本發月之半導體裝置因通道長度的增長而可於高糕進行運 同樣的,據本發明所揭露之半導體裝置,軸在源極/没極 ❹ 區之間的長度減短,但通道長度藉_極電極之凸出部變長,以 使半導體裝置之尺寸得以縮減。 有關本發明的特徵與實作,兹配合圖式作最佳實 明如下。 ” 【實施方式】 …一種半導體裝置及其製造方法,本發明之實施例將伴隨著圖 式詳細說明。 在不同的實施例描述中,當一個層(或薄膜)被稱為 '、在„ φ其他層或基板時’將會被省略,其意思是指直接在其他層或基板, 或至少一中間層。 第1圖」係為本發明實施例之金屬氧化物半導體(M〇s) 電晶體之剖面示意圖。 請參考「第1圖」’金屬氧化物半導體(M〇s)電晶體通常包 括有—半導體基板⑽、-閘極電極200、-閘極絕緣層23〇、一 間隔件240、一輕摻雜汲極(lightly d〇ped drain,LDD)區3⑻、 複數個源極/汲極區400,以及一;5夕化物層π。。 半導體基板100包括具有至少一;s夕層 '拉伸石夕或石夕錯(例如 200929382 蟲晶石夕及/或石夕錯)於其上的單晶石夕基板(例如晶圓)。此外,半導 體基板100包括有一輕摻雜η型雜質區110、-裝置絕緣層130, 以及一 ρ型井120。 裝置絶緣層130藉由一局部石夕氧化技術(L〇c〇s)及/或一淺 凹溝絕緣(STI)等製鄉成,胁隔料導财置。半導體基板 1〇〇更包括有藉由裝置絕緣層1S0界定之一主動^activeregi〇n, AR)(見「第2A圖」)。 P型井120藉由植入一低濃度之p型雜質(例如硼⑻、嫁_、 銦(In)、鉈(T1))而形成於主動區(处)中。 同樣的’半導體基板100具有一溝槽17〇。溝槽17〇形成於ρ 型井120上或形成於P型井中,且溝槽170之内側171的至少一 雜具有-曲面,更具體的來說,溝槽17〇在半導體基板⑽的 -方向上具有-更大的長度。此外或是選擇性的,溝槽17〇的整 個内侧171係為曲面。 閑極電極200形成於半導體基板1〇〇之主動區上,優選的, 閘極電極200係形成於溝槽170上或是形成於溝槽17〇巾。閑極 電極200包括有複晶㈣及/或—金屬,例如鶬、_、銘、銳:其 石夕化物、紹’或銘合金(例如,銘與至少4重量百分比㈣⑹的 銅’至少2重量百分比(wt%)的銅,至少2重量百分比(wt.吩的0欽, 及/或至少i重量百分比(wt%)的石夕)。金屬係常態黏著於隔離層 (例如’鈦及/或氮化鈦,如氮化鈦及鈦雙層),並藉由常態勘著0 隔離、抑制小丘、及/或抗反射層覆蓋(例如鈦、氮化鈦;^氮化 200929382 物、鎮鈦合金或其結合,如氮化鈦與鈦雙層,或鈇鎢合金與鈇雙 層)而覆蓋。在最佳實施例中,閘極電極200包含一本體部21〇 及一凸出部220。 閘極電極200之本體部210係設置在半導體基板1〇〇上或是 半導體基板100中,且本體部210係為一矩形外觀。舉例來說, 本體部210在-垂直方向之長度更大於寬度,且本體部21〇遮蓋 住溝槽170。 1 閘極電極200之凸出部220係與本體部21〇 —體成形,並且 向下突出。在較佳的實施例中,凸出部22〇具有一曲面,且曲面 係與溝槽170相配合,凸出部220具有與本體部21〇相同方向之 -長度,且長度大於凸出部220之寬度或厚度,並與溝槽17〇相 配合。舉例來說,凸出部220係設置於溝槽170内,且凸出部22〇 之曲面與溝槽170相配合。 閘極絕緣層/薄膜230係位於閘極電極2〇〇與半導體基板1〇〇 之間’在不同實施例中,閘極絕緣層23G包含任何適用的材料, 如氧化物(例如,熱二氧切(th_】 SK)2))。縣絕緣層挪係 部分設置於溝槽17〇内,且位於凸出部22G之下部,用以隔開閑 極電極200及半導體基板1〇〇。 勺—間隔件240設置於閘極電極2〇〇之至少-侧。間隔件· ^-#^4 » (tetraethyl orthosilicate ^ TE〇S), 亂化物’或其結合物’餘—適合獅,以麵極/祕定時植入 時做為罩體(mask),以隔絕祕電極勘之至少一侧。 200929382 姆驗麵3GG形成於p财巾,並_於_電極· 之下部。輕摻雜汲極區300具有一低濃度之n型雜質(例如填、 砷、銻等等)。在本實施例,電晶體/半導體裝置具有一對的輕摻雜 汲極區,並藉由閘極電極2〇〇及裝置絕緣層13〇而令二輕摻雜汲 極區彼此間隔分離。 在-實施例’通道區(channel region,CH)形成於輕摻雜没極 ❹ 區與閘極電極200之下部下方之間。 源極/汲極區400形成於閘極電極2〇〇之相對侧。此外,源極/ 汲極區400具有一高濃度型雜質,且源極/没極區4〇〇鄰接於 輕摻雜汲極區3〇〇。 一矽化物層500形成於閘極電極2〇〇及/或源極/汲極區4〇〇 上。矽化物層500包括鎳(Ni)矽化物,或鈦(Ti)矽化物。矽 化物層500用以改善源極/汲極4〇〇與閘極電極2〇〇之間的電性連 接。 根據本發明所揭露之N型金屬氧化物半導體_〇幻電晶體/ 半導體裝置,由於溝槽170及凸出部220之關係,使得通道長度 相對較長,因此,根據本發明所揭露之;^型金屬氧化物半導體電 晶體可防止穿擊(punchthrough)現象至通道區(CH),甚至可以將 尚電壓應用於源極/没極區400。 其中,本實施例之N型金屬氧化物半導體電晶體可於高電壓 運作。 此外,溝槽170及凸出部220所具有之曲面,可減少在閘極 200929382 電極200流動的電子數量。換句話說,位在溝槽17〇内之閘極γ 緣層230具有一曲面,其係與溝槽170相配合,電子穿越通道區 (CH)而碰撞絕緣層,但並沒有穿越閘極絕緣層23〇。因此,本 發明之Ν型金屬氧化物半導體電晶體之效能並未衰減。 此外,通道長度藉由溝槽170及凸出部220而增長,使得門 極電極200之寬度可以縮減。也就是說,與習知之不具有溝柙口〇 ❹及凸出部22〇的Ν型金屬氧化物半導體電晶體相較,本發明之ν 型金屬氧化物半導體電晶體的閘極電極2〇〇之寬度係減少的。因 此,本發明之Ν型金屬氧化物半導體電晶體的尺寸相對較小,並 且具有向整合性。 「第2Α圖」至「第2Ε圖」,係為本發明實施例型金屬 氧化物半導體電晶體的製造方法的剖面示意圖。 請芩考「第2Α圖」,一低濃度之ρ型雜質可選擇性的植入至 ❹具有一低濃度之η型雜質之石夕基板中,使得半導體基板勘形成 具有一 η型雜質區11〇及ρ型井12〇的區域。 之後’溝槽於基板上圖案化並钱刻,且漢槽位在ρ型井 與包括η型雜質區11〇之區域之間。一絕緣材料(例如二氧化矽) 况積於屢槽巾,形成至少-裝置絕緣層⑽,並藉由裝置絕緣層 130界定出主動區(activationregi〇n,从)。因此,具有^型雜質 區110、p型井120及裝置絕緣層之區域形成於半導體基板1〇〇。 之後,至少一絕緣層(例如第一氧化物層14〇及/或氮化物層 150)沉積於半導體基板1〇〇上。絕緣層(如「第2A圖」所示之 200929382 第一氧化物層140及/或氮化物層150)可選擇性的姓刻,使部分 之p型井120暴露於外,且暴露之部分p型井12〇在—垂直方向 之一長度係大於寬度。 之後’氧化暴露之p型井120的一部分,並藉由熱氧化製程 (thermal oxidation process)形成一第二氧化物層16〇。特別是暴露的 p型井120之部分與氧氣起化學反應,以形成第二氧化物層, 在氧化之前’一小凹部钱刻至p型井Do内。 請參考「第2B圖」’移除第一氧化物層14〇、氮化物層15〇 及第二氧化物層160,使溝槽17〇形成於半導體基板1〇〇上或半導 體基板100中。溝槽170之深度為埃⑷至1〇〇〇埃(人其中, 溝槽170之較佳深度係為15〇埃(入)至5〇〇埃(人)。
並與溝槽170之内側171相匹配。 之後,複晶矽層形成於第三氧化物層上 槽170。複晶矽層之本體 然後,第三氳化物层芬^
210及一自本體部210 向下突出之凸出部220 ,且複晶矽層填滿溝 邛之厚度係為1500埃(A)至8000埃(A)。 晶矽層藉由光罩製程而圖案化,以形成 極200。閘極電極200包括有一本體部 220。閘極絕緣層230係 200929382 位於閘極電極200與半導體基板1〇〇之間。 間極電極200之凸出部22〇與溝槽17〇相配合,並且於對库 溝槽170之一方向上具有較長的長度。此外,閘罐副之I 出部220具有一曲面221。 之後’低濃度之η型雜質使用鬧極電極做為光罩而植入 主動區(AR)中。植入—型雜質藉由一熱處理(或退火)製程 而擴散,以形成輕摻雜汲極區3〇〇。 ⑩ 請參考「第2D圖」,間隔件⑽藉由沈殿至少-薄膜(例如 四乙基秒酸鹽薄膜或氮化物薄膜)於半導體基板ι⑻而形成於閑 本電極200之侧上。上述之薄膜係依序疊放在半導體基板· 之主動區(AR)上,且藉由非等向性的侧製程飯刻四乙基石夕酸 鹽薄膜與氮化物薄膜。 之後,高濃度的η型雜肢_隔件·做為離子植入光罩 ❹碌人至主動H (AR)巾。植人的高漠度^獅質藉由熱處理製 程或其他任一已知的製程技術,使高漠度的η型雜質擴散至主動 區(AR)的一侧,以於閘極電極2〇〇的相對側形成源極級極區 400 〇 。月參考第2E圖」,-非化學反應(n〇n_reacting)金屬層係形成 於主動區(AR)上,魏物^ 藉由快速熱處理製程 而形成於閘極電極2〇〇及源極/沒極區4〇〇上。 其中,非化學反應金屬層係被一清潔製程所移除。 雖然本發明以前述之較佳實施例揭露如上,然其並非用以限 10 200929382 .定本發明’任何熟f相像技藝者,在不雌本發明之 内,當可作些許之更動與潤飾,本發明之專利賴=園 本說明書_巧請專纖騎界定者騎。 '視 【圖式簡單說明】 第1圖係為本發明實施例之金屬氧化物半導體(M 體之剖面示意圖。 日曰 ❹ 帛2A至2E圖係為本發明實施例之n型金屬氧化物半導體 (NMOS)電晶體的製造方法之獅示意圖。 【主要元件符號說明】 100 半導體基板 110 η型雜質區 120 Ρ型井 130 裝置絕緣層 140 第一氧化物層 150 弟二氧化物層 160 氮化物層 170 容置槽 171 内侧 200 閘極電極 210 本體部 220 凸出部 221 曲面 11 200929382 230 閘極絕緣層 240 間隔件 300 輕摻雜没極區 400 源極/没極區 500 破化物層 AR 主動區 CH 通道區
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Claims (1)
- 200929382 ' 七、申請專利範圍: 1. 一種半導體裴置,包含: —半導體基板; 閘極電極,包含一本體部及一凸出部,該本體部設置於 該半導體基板上’該凸出部自該本體部向下突出;以及 複數個源極/汲極區,設置於該半導體基板内,並位在該閘 極電極之相對側。 〇 2. 如請求項1所述之半導體裝置,其中該凸出部具有一曲面。 3·如請求項1所述之半導體裝置,其中該半導體基板具有一溝 槽’且該溝槽具有一曲面的内侧。 4_如請求項3述之半導體裝置,其中該凸出部係與該溝槽相配合。 5.如請求項3所述之半導體裝置,其巾該本體部係為—矩狀外 型,並且覆蓋該溝槽。 ❿6’如π求項3所述之半導體裝置,更包括有—閘極絕緣層,係設 置於該半導體基板及該閘極電極之間。 7·如請求項6所述之轉體裝置,其巾部分該閘極絕緣層係位於 於該溝槽内。 8.如請求項1所述之轉體裝置,其巾該轉體基板包括有-η 型雜質區、一裝置絕緣層以及一 ρ型井。 • 9.如項8所狀半導體裝置,其槐裝置崎層制以界定 主動區。 10.如請求項1所述之半導體裝置,更包括有1隔件,設置在該 13 200929382 閘極電極之相對侧上。 η·,請求項K)所述之半導齡置,更包括有_輕摻雜極區, 设置於該半導體基板中,且位於該間隔件下方。 12. 如請求項1所述之半導體裝置,更包括有-魏物層,設置於 該閘極電極及/或該源極/汲極區。 13. —種半導體裝置之製造方法,其步驟為·· 形成一溝槽於一半導體基板上; 形成一酿雜_半導縣板上,雌_雜具有設 置於該半導體基板上之一本體部,及自該本體部向下突出至該 溝槽内之一凸出部;以及 形成複數個源極/汲極區於該半導體基板中,且該源極級 極區位在該閘極電極於之相對側。 !4.如請求項13所述之轉财置之製造方法,其中形成該溝槽 之步驟包括有: 猎由-熱氧化製程以麵性的形絲少—絕緣層於該半 導體基板上;_以及 去除該絕緣層。 15·如請求項13所述之半導體裝置之製造方法,其中該溝槽之内 側具有一曲面。 16. 如請求項丨3所述之半導體裝置之製造方法,其中卿極電極 之該凸出部係填滿該溝槽。 17. 如請求項13所述之半導體裝置之製造方法,更包括有形成一 14 200929382 • _絲層於該半導縣板上,並且位於該溝槽内。 18.如請求項13所述之半導體裝置之製造方法,更包括有带成一 ^ 型雜質區、-裝置絕緣層以及—p型井於解導體基板中。 19·如請求項13所述之半導體裝置之製造方法,更包括有形成一 間隔件於於該閘極電極之相對侧上。 20.如請求項19所述之半導體裝置之製造方法,更包括有形成一 談幸譜雜&極區於該半導體基板中,且雜摻雜汲極區係鄰接於 該閘極電極。 '15
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TW097149271A TW200929382A (en) | 2007-12-17 | 2008-12-17 | Semiconductor device and method of fabricating the same |
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US (1) | US20090152648A1 (zh) |
KR (1) | KR20090064658A (zh) |
CN (1) | CN101465377A (zh) |
TW (1) | TW200929382A (zh) |
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JP5434365B2 (ja) * | 2009-08-24 | 2014-03-05 | ソニー株式会社 | 半導体装置及びその製造方法 |
DE102019121580A1 (de) * | 2019-08-09 | 2021-02-11 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Bauelement mit reduzierter absorption und verfahren zur herstellung eines bauelements |
CN112909088B (zh) * | 2021-01-25 | 2022-11-08 | 深圳大学 | 静电感应晶体管及其制备方法 |
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US5552329A (en) * | 1994-01-05 | 1996-09-03 | Lg Semicon Co., Ltd. | Method of making metal oxide semiconductor transistors |
KR100521369B1 (ko) * | 2002-12-18 | 2005-10-12 | 삼성전자주식회사 | 고속도 및 저전력 소모 반도체 소자 및 그 제조 방법 |
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2007
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2008
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Publication number | Publication date |
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US20090152648A1 (en) | 2009-06-18 |
KR20090064658A (ko) | 2009-06-22 |
CN101465377A (zh) | 2009-06-24 |
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