TW200927870A - Binder composition, electronic parts mounting substrate semiconductor using the same - Google Patents

Binder composition, electronic parts mounting substrate semiconductor using the same Download PDF

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Publication number
TW200927870A
TW200927870A TW97138262A TW97138262A TW200927870A TW 200927870 A TW200927870 A TW 200927870A TW 97138262 A TW97138262 A TW 97138262A TW 97138262 A TW97138262 A TW 97138262A TW 200927870 A TW200927870 A TW 200927870A
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Taiwan
Prior art keywords
composition
acid
adhesive
acrylate
temperature
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Application number
TW97138262A
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English (en)
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TWI439524B (zh
Inventor
Kaoru Konno
Hiroki Hayashi
Takashi Kawamori
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Hitachi Chemical Co Ltd
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Publication of TW200927870A publication Critical patent/TW200927870A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/103—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing an organic binding agent comprising a mixture of, or obtained by reaction of, two or more components other than a solvent or a lubricating agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B23K35/025—Pastes, creams, slurries
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/3618—Carboxylic acids or salts
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/362—Selection of compositions of fluxes
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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    • B23K35/365—Selection of non-metallic compositions of coating materials either alone or conjoint with selection of soldering or welding materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
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    • C09J201/00—Adhesives based on unspecified macromolecular compounds
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
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    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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Description

200927870 九、發明說明： 【發明所屬之技術領域】 本發明是關於一種作為電子零件、電路配線材料、電 極材料、導電性接合材料、導電性接著劑或者晶片接合 bonding)材料而使用的接著劑組成物、使用該接著劑組成 物的電子零件搭載基板以及半導體裝置。 【先前技術】 ❹ 將電子零件封裝於電路基板等中時，眾所周知的是使 料的接合法。但是，近年來由於對環境問題的認 ，故取代焊料而逐漸開始關注不含鉛的無鉛焊料 或接者劑組成物。 ί ^主要用作無錯焊料的SnAgCu焊料，存在著連 ^度較1^ (26G°C )、在熱敏性（th_sensitivity)較高 低的:二::零：中無法使用的問題。另外，作為溫度較 ==用;Γ為，的Sn_Bi焊料，但在高溫 發生變化、且變脆弱的問題。㈣、及成由於…皿放置而 固性題’提出有使銀粉等填充劑分散於熱 (夂昭日太直^漿（paste)狀的熱硬化型導電性接著劑 (&gt;“、、日本專利特開2002-161259硤八扨、鈦;丨播雨 性接著劑藉由以熱固體_炎9號公報）。熱硬化型導電 下的強声下降。# ^曰作為黏合劑成分，可抑制高溫 此之間^接觸，^ ’導電性表現鋪取決於金屬粒子彼 粒子的填充量:其良好的導電性必須增加導電 、'、、°果疋存在隨著黏合劑成分的減少而引 6 200927870 起接著力下降的問題。 因此，提出有藉由將助焊劑（flux)以及無鉛焊料等 錢溫下熔_金屬填紐_性樹脂巾，喊具接著性 ’ 與導電性的導電性接著劑（參照日本專利第3730209號公 報曰本專利特開2⑻1-Π0797號公報）。含有焊料的導電 雜㈣，在麵由鱗⑽金屬鍵所形成的導電性、由 於熱固性樹腊的助焊舰融性及耐熱性而減少助焊劑的清 ❹ 洗步驟以及雜接著力方面較為優異。然而，齒素性的助 焊劑存在著魏貞荷或者誘發遷移（migration)等問題， 不^有羥基的二官能羧酸存在著用以形成金屬鍵的添加量 顯者增多、保存穩定性下降或者接著力下降等問題。 【發明内容】 本發明之目的在於提供一種接著劑組成物，該接著劑 組成物可轉鱗歡性，㈣硬化物在上述零件彼此之 間以良好地潤濕擴散的狀態下形成金屬鍵，其接著性、導 電性以及耐溫度循環測試性（Temperature Cyding化对， ❹ TCT)或耐高溫放置性等的封裝可靠性為優異。另外，本 發明之目的在於提供一種具有良好可靠性的電子零件搭 基板或者半導體裝置。 ° . 本發明是關於（1) -種接著劑組成物，其含有導電粒 子（A)以及黏合劑成分（B)，其特徵在於：上述導電粒 子（A)含有具有回焊溫度（re^j〇wtemperature)以上的炼 點且不含錯的金屬（al)、以及具有低於回焊溫度的溶點且 不含錯的金屬（a2)，上述黏合劑成分（B)含有熱固性樹
200927870 脂組成物m)以及脂_二減舰（ 另外，本發明是關於（2)如上述（1)所述之接菩 組成物，其中上述回焊溫度為snAgcu焊 的封裝溫度。 胥（cream solder, +另外’本發明是關於（3)如上述⑴或⑵ 接著劑組成物’其中上述回焊溫度為施。/。 另外，本發明是關於（4)如上述⑴至 劑組成物’其中上述脂肪族二纖酸⑽ 馬'一輕·基炫*酸。 另外，本發明是關於（5)如上述（1)至（4)中任一 項所述之接著聽成物，其巾上述麟族二祕舰⑽ 為以下述通式（1)所表示的脂肪族二羥基綾酸 [化1] …⑴ (式中，R!為可具有取代基的统基，η以及m為〇〜5 的整數）。 另外，本發明是關於（6)如上述（1)至（5)中任一 項所述之接著劑組成物，其中脂肪族二經基幾酸（Μ)的 含里，相對於具有低於回焊溫度的溶點且不含錯的金屬 (a2) 100重量份為〇·ΐ重量份以上2〇重量份以下。 另外，本發明是關於（7) —種電子零件搭載基板，其 具有經由如上述（1)至（6)中任一項所述之接著劑組成 8 200927870 物而將基板與電子零件加以接著的構造。 另外，本發明是關於（8) —種半導體裝置，其具有經 由如上述（1)至（6)中任一項所述之接著劑組成物而將 半導體元件與半導體元件搭載用支持構件加以接著的構 • 造。 根據本發明，可提供一種接著劑組成物、使用該組成 物的電子零件搭載基板以及半導體裝置；該接著劑組成物 鲁 可維持保存穩定性，同時其硬化物在上述零件彼此之間以 良好地潤濕擴散的狀態下形成金屬鍵，其接著性、導電性 以及耐TCT性或耐高溫放置性等的封裝可靠性為優異。 為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉實施例，並配合所附圖式，作詳細說明如 下。 【實施方式】 本發明之接著劑組成物含有導電粒子（ 回焊溫度的熔點且不含鉛的金屬（a2)， (B)含有熱固性樹脂組成物（bl)以石 酸（b2)〇 劑成分⑻，其特徵在於:上述導電粒子(A)=; 回，溫度以上·點且不含錯的金屬（al)以及具有低於 ’上述黏合劑成分 以及脂肪族二羥基羧
1電粒子ΓΑΙ 以說 本發明中所使㈣導妹子⑷，含有具有回焊溫度 9 200927870 I上述回焊溫度例如4SnAgCu_的封m為⑽ ❹ ❹ 作為具有回焊溫度以上的溶點且不含 例如可舉出細(麵)、Au⑷，(銀)、』((銅、 阶（錄）、pd (把）、A1 (紹）等中的一種金 或兩種以上金屬所構成的合金，更具體而古，可
粉、Ag粉、Cu粉、鑛Ag的Cu粉等。作為市售品，較佳U ，使用日立化成I業股份有限公司 「MA05K」。 ·^间 口口石 作為具有低於回焊溫度的溶點且不含錯的金 例如可舉出選自Sn (錫）、Ag (銀）、Cu (鋼）、 = )、Zn(鋅)等中的一種金屬或者由兩種或兩種以上 =金屬所構合金，更具體而言，可舉出触收 點就)、或者 Sn96.5_Ag3，^ 。J等。 上述導電粒子⑷在接㈣組成物巾的含有比率較 好的是5〜95 wt%，就作業性或者導電性方面而言，進而 較好的是1G〜9Gwt%，朗裝可#性方面而言，更好 15〜85 wt%j上料餘子⑷的含有比料於5㈣ 時，存在導電性下降的傾向，另一方面，若上述導電粒子 ^ ^含有t率超過％赠°，則存在接著劑組成物的黏 度變两而無法確㈣業_可雛，或者存在由於黏合劑 200927870 成分⑻較少而使封裝可靠性下降的傾向。 有低溫度以上的溶點且不含鉛的金屬⑷與具 (a。ΉΓί的熔點且不含鉛的金1 U2)之調配比率 性方i.I 的是9G〜1游° ·· 1G〜99滴，就導電 封裝好的是70〜5 wt%: 3〇〜95游。，就 職T靠性方面而言，更好的是6 ❹ 二有低於回焊_點且二 i可於1Gwt%或超過存在封 ，為接著齡成物中含有上述導電粒子⑷的形離， :構屬⑻的情況下，可舉出:僅由金屬⑷ 料混合而成的混合粒子、將金屬⑻包覆於 ::ΐ:ΐ覆ΓΓ:金屬(a2)的情況下亦舆⑷同樣。 )與金屬(a2)的組合為任意組合。 作業性方面而言，是;:：，就印刷性或者 ，封裝可靠性方=是二穩 ㈣時’存在接著劑組成物的黏 度變问而無法確保作業性的可能性，或者為了確保 熔融性需要使用大量的脂肪族二經基_( 使保存穩定性或接著力下降的傾向。另外，若上述平均 徑超過刚細’則存在印刷性或者連接可靠性下降】傾 11 200927870 白上it平均粒從為5〇體積％的粒徑，可使用Mastersizer 雷射散射i粒度分佈測定裝置（Maivem instnjments公司 製造）進行測定而求得平均粒徑。 作為與上述金屬混合的填充材料或者被上述金屬包覆 * 的填充材料，可舉出：丙烯酸橡膠（acrylic rubber)、聚苯 乙婦（polystyrene)等的聚合物粒子；鑽石（diam〇nd)、 氮化硼、氮化鋁、氧化鋁等的無機粒子等。 β 黏合劍成分（B ) ' 本發明中所使用的黏合劑成分（Β)含有熱固性樹脂 組成物（bi)以及脂肪族二羥基羧酸（b2)兩者。 於本發明中，導電粒子⑷與黏合劑成分⑻之調 配比率，相對於接著劑組成物的固形分且以重量比計導 電粒子（A):黏合劑成分（B)較好的是5〇 : 5〇〜95 : 5。 進而，就接著性、導電性、作業性方面而言，導電粒子（A): 黏合劑成分（B)進而較好的是7〇 : 3〇〜9〇 : 1〇。關於上 述調配比率，當黏合劑成分（B)的比率超過5〇 wt%時， Φ ®導電粒子⑷的量並不充分，故存在導電性變差的傾 向，另外當黏合劑成分（B)的比率小於5wt%時，存在接 著劑組成物的黏度變高而無法確保作業性的傾向，或者 •在接著力下降的傾向。 另外，在本發明中，所謂黏合劑成分（B)是指執固 性樹脂組成物（μ)與脂肪族二羥基羧酸（b2)的混合物。 熱固性樹脂組成物（bl)含有熱固性的有機高分子化 合物或其前驅物，視需要亦可含有反應性稀釋劑、硬化劑、 12 ❹
200927870 的硬化促進劑、具有可聚合的乙稀性破- 田又f的化°物、自由基起始劑、用以緩和應力的可撓劑、 作業性的稀釋劑、接著力增強劑、潤濕性增強劑、 及用以降低黏度的反應性稀釋劑中的—種或一種 、上另外，熱固性樹脂組成物（M)亦可含有降奸虑所 列舉成分以相成分。 了 3有除此處所 作為上述熱固性的有機高分子化合物或其前驅物，並 …、特別限制’例如可舉出：環氧樹脂（ep〇xyresin)、丙稀 酸^樹，（acrylic resin)、順丁烯二酿亞胺（maleimide 樹脂、氛酸醋樹脂（cyanate)等的熱固性有機高分子化合 物$其，物等。該些之中，丙烯酸系樹脂、順丁烯二酿 亞胺樹脂或環氧樹脂的耐熱性、接著性優異，並且藉由使 用適當溶劑可將其製成液狀，因此就作業性優異方面而言 ，較好。上述熱固性的有機高分子化合物或其前驅物，可 單獨使用或者將兩種或兩種以上組合使用。 當使用環氧樹脂作為熱固性的有機高分子化合物時， 較好的是將反應性稀釋劑、硬化劑、硬化促進劑併用。
作為上述環氧樹脂，較好的是1分子中含有2個或2 個以上環氧基的化合物，例如可舉出：由雙酚A(bisphen〇l A)、雙齡F、雙盼AD等與表氯醇（epichlorohydrin)所衍 生之環氧樹脂等。作為環氧樹脂的具體例，可舉出： AER-X8501 (旭化成工業股份有限公司製造，商品名）、 R·301 (油化殼牌環氧股份有限公司製造，商品名）、YL-980 (油化殼牌環氧股份有限公司製造，商品名）等的雙酚A 13 200927870 型環氧樹脂；YDF-170 (東都化成股份有限公司製造，商 品名）等的雙酚F型環氧樹脂；R-1710 (三井石油化學工 業股份有限公司製造，商品名）等的雙酚AD型環氧樹脂，· N-730S (大日本油墨化學工業股份有限公司製造，商品 名）、Quatrex-2010 (道化學公司製造，商品名）等的苯酚 盼越（phenol novolac)型環氧樹脂；YDCN-702S (東都化 成股份有限公司製造，商品名）、EOCN-100 (曰本化藥股 份有限公司製造’商品名）等的甲紛盼醒 (cresolnovolac) 型環氧樹脂；EPPN-501 (日本化藥股份有限公司製造，商 品名）、TACTIX-742 (道化學公司製造，商品名）、vG_3010 (三井石油化學工業股份有限公司製造，商品名）、1032S (油化殼牌環氧股份有限公司製造，商品名）等的多官能 環氧樹脂；HP-4032 (大日本油墨化學工業股份有限公司 製造’商品名）等的具有萘（naphthalene)骨架的環氧樹 脂；EHPE-3150、CEL-3000 (均為Daisel化學工業股份有 限公司製造，商品名）、DME-100 (新日本理化股份有限 公司製造，商品名）、EX-216L (長瀨化成（Nagasechemtex) 工業股份有限公司製造’商品名）等的脂環式環氧樹脂； W-l〇〇 (新日本理化股份有限公司，商品名）等的脂肪族 環氧樹脂；ELM-100 (住友化學工業股份有限公司製造’ 商品名）、YH-434L (東都化成股份有限公司製造，商品 名）、TETRAD-X、TETRAC-C (均為三菱瓦斯化學股份有 限公司，商品名）等的胺型環氧樹脂；DENACOLEX-201 (長瀨化成（Nagasechemtex)工業股份有限公司製造，商 200927870 品名）等的間苯二盼（resorcin〇l)型環氧樹脂，· DENACOL EX-211 (長瀨化成工業股份有限公司製造，商品名）等的 新戊二醇（neopentyl glyc〇1)型環氧樹脂；DENAC0L EX-212 (長瀨化成工業股份有限公司製造，商品名）等的 己二醇二縮水甘油醚型環氧樹脂；DENAC〇L Εχ系列 (ΕΧ-810、8Π、850、851、82卜 830、832、84卜 861 (均 為長瀨化成工業股份有限公司製造，商品名）等的乙二醇/ 丙二醇型環氧樹脂；以下述通式（j )所表示的環氧樹脂 E-XL-24 ' E-XL-3L (均為三井東壓化學股份有限公司製 造，商品名）等。 [化2]
使用該些環氧樹脂可單獨使用或者將兩種或兩種以上組合 環氧反應性稀釋劑’是1分子中僅有1個環氧基的 範圍内本發明之接著劑組成物的特性的 円使用相對於環氧樹脂總量，較好的是在0〜30Wt% 15 200927870 的範圍内使用j作為此種環氧化合物的市售品，可舉出： PGE (日本化藥股份有限公司製造，商品名）秦 都化成股份有限公司製造’商品名）；ED领 ED_5〇9S (旭電化工業股份有限公司製造，商品·名: ' YED-122 (油化殼牌環氧股份有限公司製造品 KBM-403 (信越化學工業股份有限公司製造 TSL-8350、TSL-8355、胤_99〇5 (東芝聚石夕氧（ιςΗΐ)ΒΑ ❹ SILICONE)股份有限公司製造，商品名）等。 另外，作為硬化劑，若是通常作為環氧樹脂的硬化劑 使用的硬化劑則無特別限制，例如可舉出：(明和化 成股份有限公司製造，商品名）、VR-9300 (三井東壓化學 股伤有限a司製造’商品名）彡的苯盼龄搭樹脂；xl_225 (二井東壓化學股份有限公司製造，商品名）等的苯盼芳 烷基（phenol aralkyl)樹脂；AL-VR-9300 (三井東壓化學 股份有限公司製造，商品名）等的烯丙基（allyl)化苯盼 盼搭樹脂，雙氰胺（dicyandiamide) ; NOVACURE (旭化 ❿ 成工業股份有限公司製造’商品名）等的由環氧樹脂與胺 化合物之反應物所構成的微膠囊（micr〇CapSule)型硬化 劑，以下述通式（π )所表示的對甲酚酚醛樹脂即MTPC . (本州化學工業股份有限公司製造，商品名）；以下述通式 (m)所表示的特殊酚樹脂即PP_700_300 (曰本石油化學 股份有限公司製造’商品名）；以下述通式（jy)所表示的 一元酸一酿肼（dibasic acid dihydrazide)即 ADH、PDH、 SDH (均為曰本肼工業股份有限公司製造，商品名）等。 16 200927870 [化3]
(其中’通式（Π )中，R表示烴基， 的整數）
[化5] Η σν&gt;
^^IV) 表示間亞苯基、對亞苯基等的: 價方香族基、碳數1〜12的直鏈或支鏈亞烷基）
該等硬化劑可單獨使m麵當地ς兩種或兩顏 以上組合使用。 木田關於硬化劑的使用量，相對於環氧樹脂的環氧基1〇 田篁，硬化劑中的反應活性基的總量較好的是·2當 進而較好的是0.4〜1·〇當量，尤其好的是“ =。若上述硬化劑的使用量小於〇.3 #量，則存在抗回焊 龜裂性下降的傾向，若上述硬化_使用量超過U 17 200927870 Γ Γ、=著f组成物雜度上升且作業性下降的傾 應活性基是與環氧樹脂具有反應活 性的取代基，例如可舉出酚性羥基等。 硬化劑的使用量，相對於環氧樹脂⑽重量份，較好 的疋0,01〜90重量份，進而較好的是〇」〜5〇重量份。若 ^述硬化劑的使用量小於_重量份，則存在硬化性下降 =向’若上述硬化_使用量超過9()重量份，則存在接 者劑組成物的黏度增大且作業性下降的傾向。 為硬化促進劑’例如可舉出：有_氯化物 K均為北興化學工業股份有限公司製造， 商时名），三級胺類或其鹽DBU、仏⑽脱、1〇6、㈣、 840、5002 (均為San_Apr〇公司製造商品幻味唑 (mndazole)類的 Curez〇1、2pz_CN、2p4MHz、cm、 2PZ-OK (均為四國化成股份有限公㈣造 硬化劑以及視需要所添加的硬化促進劑，可分別單獨 ❹ 使用’另外亦可適當地將多種硬化劑以及硬化促進劑组人 ^用。硬化促進劑的使用量，相對於環氧樹脂⑽重量份°， 較好的是20重量份以下。 ^卜，作為具有可聚合的乙碳·碳雙鍵的化合物， 可舉出丙騎S旨化合物或者曱基㈣_化合物等 =含有1個或1個以上的丙_基或甲基丙歸酿基的 化合物。以下列舉具義。例如可舉出：丙烯酸甲輯 烯酸乙醋、丙烯酸丙g旨、丙烯酸異丙g|、丙稀酸正^ 丙婦酸異丁醋、丙烯酸第三丁醋、丙烯酸戊醋、丙歸^異 18 200927870 戊酯、丙烯酸己酯、丙烯酸庚酯、丙烯酸辛酯、丙烯酸2_ 乙基己醋、㈣酸壬g旨、丙烯酸癸醋、丙稀酸異癸醋、丙 烯酸十二烷基酯、丙烯酸十三烷基酯、丙烯酸十六烷基酯、 丙烯酸十八燒基酯、丙烯酸異十八烧基酯、丙婦酸環己酯、 丙烯酸異冰片酯等的丙烯酸酯化合物；甲基丙烯酸甲酯、 曱基丙烯酸乙酯、甲基丙烯酸丙酯、甲基丙烯酸異丙酯、 甲基丙烯酸正丁酯、曱基丙烯酸異丁酯、甲基丙烯酸第三 丁醋、甲基丙烯酸戊酯、曱基丙烯酸異戊酯、甲基丙烯酸 己醋、甲基丙烯酸庚酯、曱基丙烯酸辛酯、甲基丙烯酸2-乙基己醋、甲基丙稀酸壬g旨、曱基丙稀酸癸醋、曱基丙稀 酸異癸酯、甲基丙烯酸十二烷基酯、甲基丙烯酸十三烷基 酯、甲基丙烯酸十六烷基酯、甲基丙烯酸十八烷基酯、甲 基丙烯酸異十八烷基酯、甲基丙烯酸環己酯、甲基丙烯酸 異冰片酯等的甲基丙烯酸酯化合物； 二乙二醇丙烯酸酯、聚乙二醇丙烯酸酯、聚丙二醇丙 烯酸酯、丙烯酸2-甲氧基乙酯、丙烯酸2-乙氧基乙酯、丙 埽酸2-丁氧基乙酯、甲氧基二乙二醇丙烯酸酯、甲氧基聚 乙二醇丙烯酸酯、丙烯酸二環戊二烯氧基乙酯、丙烯酸2-笨氧基乙g旨、苯氧基二乙二醇丙稀酸酯、苯氧基聚乙二醇 丙烯酸酯、丙烯酸2-苯曱醯氧基乙酯、丙烯酸2_羥基-3_ 笨氧基丙酯等的丙烯酸酯化合物；二乙二醇甲基丙烯酸 酯、聚乙二醇甲基丙烯酸酯、聚丙二醇甲基丙烯酸酯、甲 基丙烯酸2-〒氧基乙酯、曱基丙烯酸2_乙氧基乙酯、甲基 丙烯酸2-丁氧基乙酯、甲氧基二乙二醇曱基丙烯酸酯、甲 19 200927870 氧基聚乙二醇甲基丙烯酸酯、甲基丙烯酸二環戊二烯氧基 乙酯、甲基丙烯酸2-苯氧基乙酯、苯氧基二乙二醇甲基丙 烯酸酯、苯氧基聚乙二醇曱基丙烯酸酯、曱基丙烯酸2_苯 甲醯氧基乙酯、甲基丙烯酸2-羥基-3-苯氧基丙酯等的曱基 丙烯酸酯化合物； 丙烯酸苄酯、丙烯酸2-氰基乙酯、丙烯醯氧基乙基 三甲氧基矽烷、丙烯酸縮水甘油酯、丙烯酸四氫呋喃曱酯 (tetrahydroforfuryl acrylate)、丙稀酸二曱胺基乙酯、丙浠 ® 酸二乙胺基乙酯、磷酸丙烯醯氧基乙酯、酸式磷酸丙烯醯 氧基乙基苯醋（acryloxyethyl phenyl add phosphate)等的 丙烯酸酯化合物；甲基丙烯酸苄酯、甲基丙烯酸2-氰基乙 醋、T -甲基丙稀酿氧基乙基三甲氧基梦烧、甲基丙稀酸縮 水甘油酯、曱基丙烯酸四氫呋喃甲酯、甲基丙烯酸二甲胺 基乙酯、甲基丙烯酸二乙胺基乙醋、磷酸甲基丙烯醯氧基 乙醋、酸式填酸甲基丙稀醯氧基乙基苯醋等的甲基丙烯酸 醋化合物； ❹ 乙二醇二丙烯酸酯、M-丁二醇二丙烯酸酯、1，6-己二 醇二丙烯酸酯、1,9-壬二醇二丙烯酸酯、1，3-丁二醇二丙烯 酸酯、新戊二醇二丙烯酸酯等的二丙烯酸酯化合物；乙二 醇二甲基丙稀酸醋、1，4-丁 一醇一曱基丙稀酸S曰、己·一 醇二甲基丙稀酸醋、1，9_壬一醇一曱基丙婦酸®曰、丁一 醇二甲基丙稀酸醋、新戍*一醇·一甲基丙稀酸知等的'一甲基 丙稀酸酯化合物； 二乙二醇二丙烯酸酯、三乙二醇二丙烯酸酯、四乙二 20 200927870 醇二丙烯酸酯、聚乙二醇二丙烯酸酯、三丙二醇二丙烯酸 酯、聚丙二醇二丙烯酸酯等的二丙烯酸酯化合物；二乙二 醇二甲基丙稀酸酯、三乙二醇二甲基丙稀酸酯、四乙二醇 一甲基丙稀酸醋、聚乙二醇二甲基丙稀酸醋、三丙二醇二 甲基丙烯酸酯、聚丙二醇二甲基丙烯酸酯等的二曱基丙烯 酸西旨化合物； 1莫耳的雙酚A、雙酚F或雙酚AD與2莫耳的丙烯 酸縮水甘油酯的反應物，1莫耳的雙酚A、雙酚F或雙酚 AD與2莫耳的甲基丙烯酸縮水甘油酯的反應物； 雙酚A、雙酚F或雙酚AD的聚氧化乙烯加成物的二 丙烯酸酯，雙酚A、雙酚F或雙酚AD的聚氧化丙烯加成 物的二丙烯酸酯，雙酚A、雙酚F或雙酚AD的聚氧化乙 烯加成物的二曱基丙烯酸酯，雙酚F或雙酚八〇的聚氧化 丙烯加成物的二曱基丙烯酸酯； 雙(丙烯醯氧基丙基)聚二甲基矽氧烷、雙(丙烯醯氧基 丙基）甲基矽氧烷-二甲基矽氧烷共聚物、雙（曱基丙烯醯氧 ❹ 基丙基)聚二甲基石夕氧烧、雙(甲基丙稀醯氧基丙基)甲基矽 氧烷-二甲基矽氧烷共聚物等。 具有可聚合的乙烯性碳-碳雙鍵的化合物，可單獨使用 上述化合物或者將兩種或兩種以上上述化合物組合使用。 另外1 作為自由基起始劑並無特別限制，就空隙（V〇id) 等方面而言’較好的是過氧化物，另外就接著劑組成物的 硬化及黏度穩定性的方面而言，過氧化物的分解溫度 較好的是7〇〜l7〇c。作為自由基起始劍的具體例，有： 21 200927870 過氧化2-乙基已酸1，1，3,3，_四甲基丁醋、(過氧化第 二丁基)環己烷、1,1·雙(過氧化第三丁基)環十二烷、過氧 化間苯二甲酸二第三丁酯、過氧化苯甲酸第三丁酯、過氧 化二異丙苯、過氧化第三丁基異丙苯、2,5_二甲基_2,5_二(過 氧化第三丁基）己烷、2,5-二曱基_2,5_二(過氧化第三丁基)3_ 己炔、過氧化氫異丙苯等。自由基起始劑在接著劑組成物 中的調配量較好的是0.1〜10加％，進而較好的是〇5〜5 wt%。
另外，作為可撓劑，可舉出：液狀聚丁二烯（宇部座 產公司製造「CTBN-13〇〇x31」、rCTBN_13〇〇x9」、日本; 達公司製腦_PB_C_2_」）等。可撓劑具有缓和二 於將半導體7G件與導線架（leadframe)進行接著所產生的 2之效果。可撓_調配量，通t相對於有機高分子化 合物及其前驅物的總量_重量份，為G〜5(K)重量份。 作為脂肪族二經基驗（b2)，若為2個經基以及i 個或1個以上直接或者經由脂肪族 :=、==，則無特別限制。2個經基=; ，。作為脂肪族二陶酸⑽，較好的是二經基:: Uhydroxyaikanoie add)，例如可舉出：22 雙經 丙酸、2,2·雙羥基甲基丁酸、2,2_等 土 羥基曱基己酸、2,2-雙羥基甲臭庚土土戊酸、2,2_雙 又r土签τ丞庚酸、2,2_ 石酸、二減己二酸等的二 二： 酸、較好的是二羥基CV〗4烷基—羧酸等。土次一羧 22 200927870 Ο為較#_旨_二縣麟(b2)，為以下述通式⑴ 所表示的脂肪族二羥基幾酸。 [化6]
(通式（1)中’比為可具有取代基的烷基，η以及m ❹ 為0〜5的整數） 上述Rl例示有：甲基、乙基、丙基、異丙基、丁基、 異I'm、戊基等碳數卜5的烧基。 作為以上述通式（丨）所表示的脂肪族二羥基羧酸的具 體例，：舉出:2,2-雙羥基甲基丙酸、2,2-雙羥基甲基丁酸' 2,2_雙經基甲基戊酸等，其中較好的是2,2_雙經基甲基丙 酸。 於本發明中，脂肪族二羥基羧酸（b2)的含量，相對 =具有低於回焊溫度的溶點且不含錯的金屬觸重 量&amp; ’較好的是0.1〜20重量份，就保存穩定性、導電性 =面而s ’進而較好的是1〇〜1〇重量份。當上述脂肪族 二經基紐（b2)的含量小於ai f量份時，導電粒子⑷ 的熔融性下降，且金屬粒子彼此之間並未充分地形成金屬 鍵，因而存在導電性下降的傾向。另一方面，若上述脂肪 ，二羥基羧酸（b2)的含量超過2G重量份，難法充分獲 付熱固性樹脂組成物的強化效果，因而存在接著劑組成物 的保存穩定性、印刷性下降的傾向。 23
另外為了使製成接者劑組成物時的作業性以及使用 時的塗佈作業性更加良好，視需要可在本發明之接著劑組 成物中添加稀釋齊|J。 200927870 本發明之接著劑組成物中，亦可使时烧偶合 (Wane coupling)(信越化學股份有限公 「KBM-573」等）或鈦偶合_接著力增_、陰離子^ 界面活性劑或氟系界面活性劑等潤濕性增強劑、矽油 (洲_ oil)等消泡劑等的添加劑。上述接著力增強 關、消泡鮮的添加劑，可分別單獨使用或者 將兩種或兩彻上組合使用；添加_合計使用量， 於接著劑組成物全體，較好的是〇1〜1〇wt〇/p 作為稀釋劑，較好的是丁基溶纖劑（butyl cellosolve)、 卡，醇^carbitol)、乙酸丁基溶纖劑、乙酸卡必醇酯、二 丙一醇單甲鍵'乙二醇二乙越、松油醇（⑸邮卿” f滞點相驗高的有機鋪。稀釋獅制量，相對於接 著劑組成物全體，較好的是0.1〜30 wt%的範圍。 製造本發明之接著劑組成物時，將攪拌器、研磨機 (St〇ne miU)、二輥研磨機、行星式混合機（planetary mixer) 等分散及炫解裝置適當組合，將導電粒子（A)以及黏合 劑成分（B)與視需要所添加的其他成分同時地，一次性 或分批地視需要進行加熱，並進行混合、熔解、解粒混練 或分散，而形成均勻的漿狀即可。 本，明之接著劑組成物具有與焊料相同程度的導電性 並且接著力優異，因此可廣泛地用作先前使用焊料的部分 24 200927870 之替代材料。即，可用於被動零件或大型積體電路（Large S^l^tegration ’ LSI)封裝等的電子零件與使聚醯亞胺樹 月曰環氧樹脂、雙馬來酿亞胺_三唤（Triazine， BT)樹脂等塑膠含浸於聚醯亞胺樹脂、環氧樹脂等塑膠 膜、玻璃不織布等基材上並使其硬化者以及氧化鋁等陶瓷 等的基板之接合。 具體而言，如圖1〜圖2所示，本發明之接著劑組成 物亦可用於先前以焊料進行連接之被動零件的連接、或以 焊料或各向異性導電性膜進行連接之半導體元件等電子零 件的連接。特別是，本發明之接著劑組成物與焊料相比可 在低溫下進行連接，因此適用於對電荷耦合元件（〇1虹明 Coupled Device，CCD)模組等耐熱性差的零件進行連接 之情形。另外，當經由焊料將半導體元件與基板進行連接 時為了緩和由於半導體元件與基板的熱膨脹係數的差所 產生的應力，必須向元件與基板之間注入底部填充 (underfill)材料。相對於此，當利用本發明之接著劑組成 物進行連接時，因樹脂成分具有緩和應力的作用，故無需 底°卩填充材料’另外就步雜方面而言亦可減少助焊劑清洗 步驟或底部填充注入步驟，因此本發明之接著劑組成物較 為有用。 另外，如圖3所示，可將本發明之接著劑組成物盥焊 料組合使用來進行半導體元件與基板的連接。進而，^圖 4所示，本發明之接著劑組成物亦可在將作為圖i及圖2 所示的搭載有被動零件的中介層（interp〇ser)之基板封裝 25 200927870 於如母板（motherboard)的其他基板上時使用。 本發明之電子料搭縣祕有㈣本㈣之接著劑 組成物將基板與電子零件加以接著的構造。 以下，利用圖1〜圖4就本發明之電子零件搭載基板 加以說明。 ° ^ ,圖1是表示本發明之電子零件搭載基板的一較佳實施 形態的示意剖面圖。如圖1所示，電子零件搭載基板工具 有：經由導電構件將形成於基板上的基板連接端子 14與連接於電子零件16上的電子零件連接端子18進行電 性連接之構造。而且，導電構件1〇是使上述本發明之接著 劑組成物硬化而成的。 利用本發明之接著劑組成物使電子零件16與基板12 相接著時，首先藉由分注（dispense)法、網版印刷（叱代如 prmt)法、壓印（stamping)法等，將接著劑組成物塗佈 於基板I2的基板連接端子14上。其次，以經由接著劑組 成物將電子零件連接端子18與基板連接端子14進行電性 ❿ 連接之方式’將具有電子料連接端子18的電子零件16 壓接於基板U上，其後利用烘箱或回焊爐（refl〇w f_ce) 等加熱裝置對接著劑組成物進行加熱硬化，藉此可進行電 子零件16與基板12的接著。 另外，本發明之電子零件搭載基板並不限定於圖1所 示的構造，例如亦可具有圖2〜圖4所示的構造。圖2所 不=電子零件搭载基板2具有如下構造：經由使本發明之 接著劑組成物硬化而成的導電構件10,將形成於基板12 26 200927870 上的基板連接端子14與連接於電子零件16上的導線2〇 進行電性連接。
另外，圖3所示的電子零件搭载基板3具有將本發明 之接著劑組成物與焊料組合而將基板12與電子零件16相 連接的構造。電子零件搭載基板3中，在電子零件16上形 成有電子零件連接端子18,進而在電子零件連接端子18 上形成有焊球（solderball) 22。而且，經由使本發明之接 著劑組成物硬化而成的導電構件1〇將該焊球22與形成於 基板12上的基板連接端子14進行電性連接，從而形成電 子零件搭載基板3。 進而 圖4所示的電子零件搭載基板4具有將圖2所 不的搭載有電子零件16的基板12進一步封裝於苴 24上的構造。此處’經由使本發明之接著雜成物硬^而 成的導電構件1G來進行電子零件16與基板12的連接、以 及基板12與基板24的連接。 另外，本發明之半導體裝置，具有經由本發明之接著 料導體元件與+導體元件搭_支持構件加以
It 在將半導體元件接著於半導體元件搭載用支 上之後，視需要進行打線接合（—bond)步驟、 42 作為料體元件搭制支持構件，例如可舉出： 。金導線架、銅導線架、纪預鑛導線架（preyed ，、雙順丁烯二醯亞胺所構成的ΒΤ樹脂使用基板） 27 200927870 專的有機基板。 使用本發明之接著劑組成物將半 體元件搭顧支持構件上時，可藉由以下方法進 =分注法、贿印刷法、麗印料將接㈣ ^半導體元件搭載用支持構件上，轉壓接半導體元件佈 其後利賴箱或加驗等域U進行加熱硬彳卜加敎硬 化通常是藉由在應〜3(Krc下加熱5秒〜ια小時而進行。
進而’經過姚接合步驟後，謂成利㈣㈣方法進行 密封而完成之半導體裝置。 [實施例] 以下，透過實施例來具體說明本發明，但本發明並不 受其限制。 實施例、參考例中所使用的材料是以下述方法而製作 或獲得的。製作方法是以實施例丨作為一例而進行揭示， 其他實施例以及參考例的樹脂組成、調配比如表1〜表2 所示’製作方法與實施例1相同。 [實施例1] 將14.8重量份的YDF-170(東都化成股份有限公司製 造’商品名’雙酚F型環氧樹脂，環氧當量= 170)、1.5 重量份的2PZ-CNS (四國化成工業股份有限公司製造，商 品名’咪唑化合物）及3.7重量份的BHPA ( AlfaAesar製 4 ’ 2,2-bis(hydroxymethyl)propionicacid，2,2-雙經基甲基 丙酸）加以混合，通過三輥壓延機3次而製備黏合劑成分。 接著，相對於上述所獲得的20重量份的黏合劑成分， 28 200927870 添加40重量份的金屬Sn42-Bi58焊料粒子（平均粒徑2〇以 m，熔點138°C )及40重量份的金屬ΜΑ〇5Κ (銀包覆銅 粉，商品名，日立化成工業股份有限公司製造）並加以混 合，在大氣壓下利用真空攪拌研磨機混練1〇分鐘後，在 500 Pa以下的壓力下進行1〇分鐘混練以及脫泡處理，藉 此獲得接著劑組成物。 [實施例2〜實施例7、參考例1〜參考例7] 除將組成設為表1〜表2所示的組成以外，其餘與實 施例1同樣之方式進行操作，獲得各接著劑組成物。 另外，表1〜表2所示的材料的詳細内容如下。另外， 表1〜表2中的各材料的調配量的單位為重量份。 BHBA : 2,2-雙經基甲基丁酸 BHVA : 2,2-雙羥基甲基戊酸
金屬Sn96.5-Ag3-Cu0.5焊料：平均粒徑20 /zm，熔 點 217〇C (接著力、體積電阻率、耐TCT性、以及耐高溫放置 ❹ 性的評價） 以下述方法對上述實施例丨〜實施例了、參考例丨〜參 考例7之接著劑組成物的特性進行測定。將其結果匯總揭 示於表1至表2。 (1)接著力：將約〇.5 mg的上述接著劑組成物塗佈 於鍍Ag的Cu板上，在其上面搭載2 mmx2 mmx〇 μ mm 的鍵Sn的Cu板。隨後，對使用實施例丨〜實施例7以及 參考例1、2、4〜參考例7的接著劑組成物之試驗片施加 29 200927870 150°C、20分鐘的熱歷程’對參考例3之試驗片施加260 。(：、10分鐘的熱歷程。使用該試驗片’以剪切速度500 # m/sec、間隙（clearance) 100 的條件’利用黏結強度 試驗機（Bond Tester) (DAGE 系列 4000 ’ Arctek 股份有 限公司製造）測定於25°C下的剪切強度。
(2)體積電阻率：經由上述接著劑組成物將2片寬度 1 mmx長度5 mmx厚度0.15 mm的鍍Ag的Cu板以相互垂 直的方式貼合成十字型，而準備接著劑層為1 mmxl mmx 0.1 mm的試驗片，進而施加上述（1)中所記載的熱歷程。 使用該試驗片，以四端子法（R687E DIGITAL MULTIMETER，Advantest公司製造）來測定厚度方向的 體積電阻率。 (3) TCT試驗：使用金屬掩模（metal mask)(厚度 100 em、開口尺寸i.o mmxi.6 mm)將上述接著劑組成 物印刷於玻璃環氧基板（l〇〇mmx5〇mmxl.〇mm)上的鑛 Ag的Cu箔平台（iand) ( 1.7 mmx 1.4 mm)上，並搭載晶 片電阻（3.2 mmxl.6 mm，晶片電阻 RK73Z2BTTD，Kowa 公司製造）。對該零件搭載基板施加上述（1)的熱歷程， 而製作耐TCT性評價用試驗基板。將該試驗基板投入熱衝 擊試驗機（-55°CA5 min，125。(：/15 min，ΨΙΝΤΕΧΉ NT 1 〇 1 〇，楠本化成股份有限公司製造）中，測定接觸電阻。 另外’表1〜表2的耐TCT性是表示姆於初始電阻顯示 ±10%以上的電阻變化率的循環數。 (4) 高溫放置試驗：將以與上述（3)同樣之方式製 200927870
作的試驗基板投入125°C的高溫槽（小型環境試驗機 JUNIOR SA01，楠本化成股份有限公司製造）中，測定接 觸電阻。另外，表1〜表2的高溫放置試驗表示相對於初 始電阻顯示±10%以上的電阻變化率的放置時間。 31 200927870 [表1] 實施例 1 2 3 4 5 6 7 導電粒子 (A) 金屬（al) MA05K 40 20 8 17.5 22.5 20 20 金屬（a2) Sn42-Bi58 40 60 72 52.5 67.5 60 60 Sn96.5-Afi3-Cu0.5 0 0 0 0 0 0 0 黏合劑 (B) 熱固性樹脂 組成物（bl) 環氧樹脂 14.8 14.8 14.8 22.3 7.5 14.8 14.8 硬化促進劑 1.5 1.5 1.5 2.2 0.7 1.5 1.5 脂肪族二羥基 羧酸（b2) BHPA 3.7 3.7 3.7 5.5 1.8 0 0 BHBA 0 0 0 0 0 3.7 0 BHVA 0 0 0 0 0 0 3.7 芳香族羧酸 水揚酸 0 0 0 0 0 0 0 熱歷程 硬化溫度（°C) 150 150 150 150 150 150 150 硬化時間（分鐘） 20 20 20 20 20 20 20 接著力（MPa) 57 62 68 60 58 60 63 體積電阻率（xl〇_5 Ω·αη) 4.1 2.3 3.6 2.7 3.7 2.4 2.3 TCT試驗（·55〜125°c)(循環數） 2100 3700 2800 3700 2500 3500 3500 高溫放置試驗（125°C )(小時） &gt; 2000 &gt; 2000 &gt; 2000 &gt; 2000 &gt; 2000 &gt; 2000 &gt; 2000 [表2] 參考例 1 2 3 4 5 6 7 導電粒 子（A) 金屬（al) MA05K 0 0 0 20 20 0 0 金屬（a2) Sn42-Bi58 80 95 0 60 60 80 80 Sn96.5-Ag3 -CuO. 5 0 0 95 0 0 0 0 黏合劑 (B) 熱固性樹脂 組成物（bl) 環氧樹脂 14.8 0 0 14.8 18.2 14.8 14.8 硬化促進劑 1.5 0 0 1.5 1.8 1.5 1.5 脂肪族二羥基羧 酸（b2) BHPA 3.7 5 5 0 0 0 0 BHBA 0 0 0 0 0 3.7 0 BHVA 0 0 0 0 0 0 3.7 芳香族羧酸 水揚酸 0 0 0 3.7 0 0 0 熱歷程 硬化溫度（°c) 150 150 260 150 150 150 150 硬化時間（分鐘） 20 20 10 20 20 20 20 接著力（MPa) 67 69 66 22 66 68 65 體積電阻率（xl(T5 Ω_αη) 8.2 8.0 2.4 &gt;10 &gt;10 8.4 8.3 TCT試驗（-55〜125°C)(循環數） 2000 1000 800 200 100 2000 2000 高溫放置試驗（125°C )(小時） &gt; 2000 &gt; 2000 &gt; 2000 &lt;100 &lt;100 &gt; 2000 &gt; 2000
由表1可知，本發明之接著劑組成物具有優異的耐 TCT性。不含有金屬（al)的參考例1之接著劑組成物與 32 ❹ 參 200927870 含有金屬⑷的實施例1、實施例2相比，體積電阻| 的值較大，TCT試驗等的可紐絲差。篮積電阻率 不含有金屬⑷以及熱固性樹脂組成物 考例2或參考例3之接著劑組成物與含有金屬）= 熱固性樹脂組成物（M)的實施例i、實施例2相比 未，得熱ϋ性成分的強化效果，因此似試驗等的 較差。不含有脂肪族二經基魏（b2)的參考例 考例5之接著劑組成物與含有脂肪族二經基幾酸（二 實，例1〜實施例7相比，並未形成有效率 路 径（啊），因此體積電阻率的值較大，TC 性亦較差。不含有金屬⑻的參考例可罪 著劑組成物與含有金屬⑷的實麵6、實_ St接 體積電阻率的值較大，似試驗等的可靠性亦較差匕’ 雖然本發明已以實施例揭露如上，然其並以 本發明’任何熟習此技藝者，在不脫離本發明=疋 圍内，當可作些許之更動與潤飾，因精砷和範 當視後附之申請專利範圍所界定者為準。 呆護範圍 【圖式簡單說明】 ，1是表示本發明之電子零件搭縣板的 形態的示意剖面圖。 隹實施 圖2是表示本發明之電子零件搭·㈣另 施形態的示意刮面圖。 車乂佳實 是ί示本發明之電子零件搭载基板的另-較佳眘 施形態的不意剖面圖。 我4圭實 33 200927870 圖4是表示本發明之電子零件搭載基板的另一較佳實 施形態的示意剖面圖。 【主要元件符號說明】 1、2、3、4 :電子零件搭載基板 10 :導電構件 12、24 :基板 14 :基板連接端子 16 :電子零件 18 :電子零件連接端子 20 :導線 22 :焊球 24 :其他基板 ❹ 34

Claims (1)

  1. 200927870 &lt;1 ❹ 十、申請專利範圍： ㈣^種接著敝成物’其含料電粒子⑷以及黏合 齊J成刀（B)，其特徵在於： 不粒子⑷含有具有回焊溫度以上的溶點且 ΖίίΪ Ul)以及具有低於回焊溫度的熔點且不含 鉛的金屬（a2)， 、上述黏合劑成分⑻含有熱固性樹脂組成物(M) 以及知肪族二羥基羧酸（b2)。 2. 如申料圍第丨項所述之接著劑組成物 ，其中 上述回卜溫度為SnAgCU焊㈣封裝溫度。 3. 如申請專利範圍第1項或第2項所述之接著劑組成 其中上述回焊溫度為260°C。 4. 如申請專利範圍第丨項或第2項所述之接著劑組成 其中上述脂肪族二羥基羧酸（b2)為二羥基烷酸。 5·如申睛專利範圍第1項或第2項所述之接著劑組成 其中上述脂肪族二羥基羧酸（b2)為以下述通式（1) 所表示的脂肪族二羥基羧酸 [化1] Rl-C——C〇〇H(cH2^-〇H (式中’ 為可具有取代基的烧基，n以及m為0〜5 的整數）。 6.如申請專利範圍第1項或第2項所述之接著劑組成 物 物 物 (1) 35 200927870 $其中上述脂肪族二窥基幾酸（b2)的含量，相對於上 ^具有低於轉溫度的熔點且不含綱金屬（a2) 100重 量份’為0.1重量份以上2〇重量份以下。 7·—種電子零件搭载基板’其具有經由如申請專利範 f第1項至第6項中任—項所述之接著劑組成物而將基板 與電子零件加以接著的構造。 8·-種半導體裝置，其具有_如申請專利範圍 ❹ $至第6項中任—項所述之接著劑組成物將半導體元侔 半導體元件搭載用支持構件加以接著的構造。 一 〇 36
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