JP5867584B2 - 半導体用接着剤及び半導体装置の製造方法 - Google Patents
半導体用接着剤及び半導体装置の製造方法 Download PDFInfo
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- JP5867584B2 JP5867584B2 JP2014500862A JP2014500862A JP5867584B2 JP 5867584 B2 JP5867584 B2 JP 5867584B2 JP 2014500862 A JP2014500862 A JP 2014500862A JP 2014500862 A JP2014500862 A JP 2014500862A JP 5867584 B2 JP5867584 B2 JP 5867584B2
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Description
本実施形態の半導体用接着剤は、エポキシ樹脂(以下、場合により「(a)成分」という。)、硬化剤(以下、場合により「(b)成分」という。)、及び、下記式(1−1)又は(1−2)で表される基を有する化合物(以下、場合により「(c)成分」という。)を含有する。
エポキシ樹脂としては、分子内に2個以上のエポキシ基を有するものであれば特に制限なく用いることができる。(a)成分として、例えば、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ナフタレン型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、フェノールアラルキル型エポキシ樹脂、ビフェニル型エポキシ樹脂、トリフェニルメタン型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂及び各種多官能エポキシ樹脂を使用することができる。これらは単独で又は2種以上の混合物として使用することができる。
(b)成分としては、例えば、フェノール樹脂系硬化剤、酸無水物系硬化剤、アミン系硬化剤、イミダゾール系硬化剤及びホスフィン系硬化剤が挙げられる。(b)成分がフェノール性水酸基、酸無水物、アミン類又はイミダゾール類を含むと、接続部に酸化膜が生じることを抑制するフラックス活性を示し、接続信頼性・絶縁信頼性を向上させることができる。以下、各硬化剤について説明する。
フェノール樹脂系硬化剤としては、分子内に2個以上のフェノール性水酸基を有するものであれば特に制限はなく、例えば、フェノールノボラック樹脂、クレゾールノボラック樹脂、フェノールアラルキル樹脂、クレゾールナフトールホルムアルデヒド重縮合物、トリフェニルメタン型多官能フェノール樹脂及び各種多官能フェノール樹脂を使用することができる。これらは単独で又は2種以上の混合物として使用することができる。
酸無水物系硬化剤としては、例えば、メチルシクロヘキサンテトラカルボン酸二無水物、無水トリメリット酸、無水ピロメリット酸、ベンゾフェノンテトラカルボン酸二無水物及びエチレングリコールビスアンヒドロトリメリテートを使用することができる。これらは単独で又は2種以上の混合物として使用することができる。
アミン系硬化剤としては、例えばジシアンジアミドを使用することができる。
イミダゾール系硬化剤としては、例えば、2−フェニルイミダゾール、2−フェニル−4−メチルイミダゾール、1−ベンジル−2−メチルイミダゾール、1−ベンジル−2−フェニルイミダゾール、1−シアノエチル−2−ウンデシルイミダゾール、1−シアノ−2−フェニルイミダゾール、1−シアノエチル−2−ウンデシルイミダゾールトリメリテイト、1−シアノエチル−2−フェニルイミダゾリウムトリメリテイト、2,4−ジアミノ−6−[2’−メチルイミダゾリル−(1’)]−エチル−s−トリアジン、2,4−ジアミノ−6−[2’−ウンデシルイミダゾリル−(1’)]−エチル−s−トリアジン、2,4−ジアミノ−6−[2’−エチル−4’−メチルイミダゾリル−(1’)]−エチル−s−トリアジン、2,4−ジアミノ−6−[2’−メチルイミダゾリル−(1’)]−エチル−s−トリアジンイソシアヌル酸付加体、2−フェニルイミダゾールイソシアヌル酸付加体、2−フェニル−4,5−ジヒドロキシメチルイミダゾール、2−フェニル−4−メチル−5−ヒドロキシメチルイミダゾール、及び、エポキシ樹脂とイミダゾール類の付加体が挙げられる。これらの中でも、優れた硬化性、保存安定性及び接続信頼性の観点から、1−シアノエチル−2−ウンデシルイミダゾール、1−シアノ−2−フェニルイミダゾール、1−シアノエチル−2−ウンデシルイミダゾールトリメリテイト、1−シアノエチル−2−フェニルイミダゾリウムトリメリテイト、2,4−ジアミノ−6−[2’−メチルイミダゾリル−(1’)]−エチル−s−トリアジン、2,4−ジアミノ−6−[2’−エチル−4’−メチルイミダゾリル−(1’)]−エチル−s−トリアジン、2,4−ジアミノ−6−[2’−メチルイミダゾリル−(1’)]−エチル−s−トリアジンイソシアヌル酸付加体、2−フェニルイミダゾールイソシアヌル酸付加体、2−フェニル−4,5−ジヒドロキシメチルイミダゾール及び2−フェニル−4−メチル−5−ヒドロキシメチルイミダゾールが好ましい。これらは単独で又は2種以上を併用して用いることができる。また、これらをマイクロカプセル化した潜在性硬化剤としてもよい。
ホスフィン系硬化剤としては、例えば、トリフェニルホスフィン、テトラフェニルホスホニウムテトラフェニルボレート、テトラフェニルホスホニウムテトラ(4−メチルフェニル)ボレート及びテトラフェニルホスホニウム(4−フルオロフェニル)ボレートが挙げられる。
(c)成分は、式(1−1)又は(1−2)で表される基を有する化合物(以下、場合により「フラックス化合物」という。)である。(c)成分はフラックス活性を有する化合物であり、本実施形態の半導体用接着剤において、フラックス剤として機能する。(c)成分としては、フラックス化合物の1種を単独で用いてもよく、フラックス化合物の2種以上を併用してもよい。
本実施形態の半導体用接着剤は、必要に応じて、重量平均分子量が10000以上の高分子成分((d)成分)を含有していてもよい。(d)成分を含有する半導体用接着剤は、耐熱性及びフィルム形成性に一層優れる。
装置名:HCL−8320GPC、UV−8320(製品名、東ソー社製)、又はHPLC−8020(製品名、東ソー社製)
カラム:TSKgel superMultiporeHZ−M×2、又は2pieces of GMHXL + 1piece of G−2000XL
検出器:RI又はUV検出器
カラム温度:25〜40℃
溶離液:高分子成分が溶解する溶媒を選択する。例えば、THF(テトラヒドロフラン)、DMF(N,N−ジメチルホルムアミド)、DMA(N,N−ジメチルアセトアミド)、NMP(N−メチルピロリドン)、トルエン。尚、極性を有する溶剤を選択する場合は、リン酸の濃度を0.05〜0.1mol/L(通常は0.06mol/L)、LiBrの濃度を0.5〜1.0mol/L(通常は0.63mol/L)と調整してもよい。
流速:0.30〜1.5mL/分
標準物質:ポリスチレン
本実施形態の半導体用接着剤は、必要に応じて、フィラー((e)成分)を含有していてもよい。(e)成分によって、半導体用接着剤の粘度、半導体用接着剤の硬化物の物性等を制御することができる。具体的には、(e)成分によれば、例えば、接続時のボイド発生の抑制、半導体用接着剤の硬化物の吸湿率の低減、等を図ることができる。
本実施形態の半導体用接着剤には、酸化防止剤、シランカップリング剤、チタンカップリング剤、レベリング剤、イオントラップ剤等の添加剤を配合してもよい。これらは1種を単独で又は2種以上を組み合わせて用いることができる。これらの配合量については、各添加剤の効果が発現するように適宜調整すればよい。
本実施形態の半導体装置について、図1及び2を用いて以下説明する。図1は、本発明の半導体装置の一実施形態を示す模式断面図である。図1(a)に示すように、半導体装置100は、互いに対向する半導体チップ10及び基板(回路配線基板)20と、半導体チップ10及び基板20の互いに対向する面にそれぞれ配置された配線15と、半導体チップ10及び基板20の配線15を互いに接続する接続バンプ30と、半導体チップ10及び基板20間の空隙に隙間なく充填された接着材料40とを有している。半導体チップ10及び基板20は、配線15及び接続バンプ30によりフリップチップ接続されている。配線15及び接続バンプ30は、接着材料40により封止されており外部環境から遮断されている。
本実施形態の半導体装置の製造方法について、図4を用いて以下説明する。図4は、本発明の半導体装置の製造方法の一実施形態を模式的に示す工程断面図である。
(a)エポキシ樹脂
・トリフェノールメタン骨格含有多官能固形エポキシ(ジャパンエポキシレジン株式会社製、商品名「EP1032H60」、以下「EP1032」という。)
・ビスフェノールF型液状エポキシ(ジャパンエポキシレジン株式会社製、商品名「YL983U」、以下「YL983」という。)
・柔軟性エポキシ(ジャパンエポキシレジン株式会社製、商品名「YL7175」、以下「YL7175」という。)
(b)硬化剤
・2,4−ジアミノ−6−[2’−メチルイミダゾリル−(1’)]−エチル−s−トリアジンイソシアヌル酸付加体(四国化成株式会社製、商品名「2MAOK−PW」、以下「2MAOK」という。)
(c)式(1−1)又は(1−2)で表される基を有する化合物からなるフラックス剤
・2,2−ジメチルグルタル酸(アルドリッチ社製、融点約83℃)
・3,3−ジメチルグルタル酸(アルドリッチ社製、融点約100℃)
(c’)他のフラックス剤
・グルタル酸(東京化成株式会社製、融点約98℃)
・コハク酸(アルドリッチ社製、融点約188℃)
・アジピン酸(東京化成株式会社製、融点約153℃)
・マロン酸(アルドリッチ社製、融点約135〜137℃)
・1,3,5−ペンタントリカルボン酸(東京化成株式会社製、融点約113℃、以下「ペンタントリカルボン酸」という。)
(d)分子量10000以上の高分子成分
・フェノキシ樹脂(東都化成株式会社製、商品名「ZX1356」、Tg:約71℃、Mw:約63000、以下「ZX1356」という。)
(e)フィラー
(e−1)無機フィラー
・シリカフィラー(株式会社アドマテックス製、商品名「SE2050」、平均粒径0.5μm、以下「SE2050」という。)
・エポキシシラン処理シリカフィラー(株式会社アドマテックス製、商品名「SE2050−SEJ」、平均粒径0.5μm、以下「SE2050−SEJ」という。)
・アクリル表面処理ナノシリカフィラー(株式会社アドマテックス製、商品名「YA050C−SM」、平均粒径約50nm、以下「SMナノシリカ」という。)
(e−2)樹脂フィラー
・有機フィラー(ロームアンドハースジャパン株式会社製、商品名「EXL−2655」、コアシェルタイプ有機微粒子、以下「EXL−2655」という。)
装置名:HPLC−8020(製品名、東ソー社製)
カラム:2pieces of GMHXL + 1piece of G−2000XL
検出器:RI検出器
カラム温度:35℃
流速:1mL/分
標準物質:ポリスチレン
(実施例1)
エポキシ樹脂3g(「EP1032」を2.4g、「YL983」を0.45g、「YL7175」を0.15g)、硬化剤「2MAOK」0.1g、2,2−ジメチルグルタル酸0.11g(0.69mmol)、無機フィラー1.9g(「SE2050」を0.38g、「SE2050−SEJ」を0.38g、「SMナノシリカ」を1.14g)、樹脂フィラー(EXL−2655)0.25g、及びメチルエチルケトン(固形分量が63質量%になる量)を仕込み、直径0.8mmのビーズ及び直径2.0mmのビーズを固形分と同重量加え、ビーズミル(フリッチュ・ジャパン株式会社、遊星型微粉砕機P−7)で30分撹拌した。その後、フェノキシ樹脂(ZX1356)を1.7gを加え、再度ビーズミルで30分撹拌した後、撹拌に用いたビーズをろ過によって除去し、樹脂ワニスを得た。
使用した材料の組成を下記表1に記載のとおりに変更したこと以外は、実施例1と同様にして、実施例2のフィルム状接着剤及び比較例1〜5のフィルム状接着剤を作製した。
実施例又は比較例で作製したフィルム状接着剤を所定のサイズ(縦8mm×横8mm×厚さ0.045mm)に切り抜き、ガラスエポキシ基板(ガラスエポキシ基材:420μm厚、銅配線:9μm厚)上に貼付し、はんだバンプ付き半導体チップ(チップサイズ:縦7.3mm×横7.3mm×厚さ0.15mm、バンプ高さ:銅ピラー+はんだ計約40μm、バンプ数328)をフリップ実装装置「FCB3」(パナソニック製、商品名)で実装した(実装条件:圧着ヘッド温度350℃、圧着時間5秒、圧着圧力0.5MPa)。これにより、図4と同様に上記ガラスエポキシ基板と、はんだバンプ付き半導体チップとがデイジーチェーン接続された半導体装置を作製した。
上記の方法で作製した半導体装置について、超音波映像診断装置(商品名「Insight−300」、インサイト製)により外観画像を撮り、スキャナGT−9300UF(EPSON社製、商品名)でチップ上の接着材料層(半導体用接着剤の硬化物からなる層)の画像を取り込み、画像処理ソフトAdobe Photoshopを用いて、色調補正、二階調化によりボイド部分を識別し、ヒストグラムによりボイド部分の占める割合を算出した。チップ上の接着材料部分の面積を100%として、ボイド発生率が10%以下の場合を「A」とし、10〜20%を「B」とし、20%より多い場合を「C」として評価した。
上記の方法で作製した半導体装置について、接続部の断面を観察し、Cu配線の上面に90%以上はんだが濡れている場合を「A」(良好)、はんだの濡れが90%より小さい場合を「B」(濡れ不足)として評価した。
実施例又は比較例で作製したフィルム状接着剤を所定のサイズ(縦5mm×横5mm×厚さ0.045mm)に切り抜き、シリコンチップ(縦5mm×横5mm×厚さ0.725mm、酸化膜コーティング)上に70℃で貼付け、熱圧着試験機(日立化成テクノプラント株式会社製)を用いてソルダーレジスト(太陽インキ製、商品名「AUS308」)がコーティングされたガラスエポキシ基板(厚み0.02mm)に圧着した(圧着条件:圧着ヘッド温度250℃、圧着時間5秒、圧着圧力0.5MPa)。次に、クリーンオーブン(ESPEC製)中でアフターキュア(175℃、2h)して、試験サンプルとしての半導体装置を得た。
実施例又は比較例で作製したフィルム状接着剤を所定のサイズ(縦5mm×横5mm×厚さ0.045mm)に切り抜き、シリコンチップ(縦5mm×横5mm×厚さ0.725mm、酸化膜コーティング)上に70℃で貼付け、熱圧着試験機(日立化成テクノプラント株式会社製)を用いてソルダーレジスト(太陽インキ製、商品名「AUS308」)がコーティングされたガラスエポキシ基板(厚み0.02mm)に圧着した(圧着条件:圧着ヘッド温度250℃、圧着時間5秒、圧着圧力0.5MPa)。次に、クリーンオーブン(ESPEC製)中でアフターキュア(175℃、2h)して、試験サンプルとしての半導体装置を得た。
<初期接続性の評価>に記載した方法で作製した半導体装置を、封止材(日立化成工業株式会社製、商品名「CEL9750ZHF10」)を用いて、180℃、6.75MPa、90秒の条件でモールドし、クリーンオーブン(ESPEC製)中で175℃で5時間アフターキュアを行い、パッケージを得た。次に、このパッケージをJEDEC level 2条件で高温吸湿後、IRリフロー炉(FURUKAWA ELECTRIC製、商品名「SALAMANDER」)にパッケージを3回通過させた。リフロー後のパッケージの接続性について、上述の初期接続性の評価と同様の方法の方法で評価し、耐リフロー性の評価とした。剥離がなく接続良好な場合を「A」とし、剥離や接続不良が生じた場合を「B」とした。
<初期接続性の評価>に記載した方法で作製した半導体装置を、封止材(日立化成工業株式会社製、商品名「CEL9750ZHF10」)を用いて、180℃、6.75MPa、90秒の条件でモールドし、クリーンオーブン(ESPEC製)中で175℃で5時間アフターキュアを行い、パッケージを得た。次に、このパッケージを冷熱サイクル試験機(ETAC製、商品名「THERMAL SHOCK CHAMBER NT1200」)につなぎ、1mA電流を流し、25℃2分間/−55℃15分間/25℃2分間/125℃15分間/25℃2分間を1サイクルとして、1000サイクル繰り返した後の接続抵抗の変化を評価した。初期の抵抗値波形と比べて1000サイクル後も大きな変化がなかった場合を「A」、1Ω以上の差が生じた場合を「B」とした。
実施例又は比較例で作製したフィルム状接着剤(厚み:45μm)を、くし型電極評価TEG(日立化成工業株式会社製、配線ピッチ:50μm)にボイドなく貼付し、クリーンオーブン(ESPEC製)中、175℃で2時間キュアした。キュア後のサンプルを、加速寿命試験装置(HIRAYAMA社製、商品名「PL−422R8」、条件:130℃/85%RH/100時間、5V印加)に設置し、絶縁抵抗を測定した。100時間後の絶縁抵抗が108Ω以上であった場合を「A」とし、107Ω以上108Ω未満であった場合を「B」とし、107Ω未満であった場合を「C」として評価した。
Claims (8)
- m1が0〜8の整数であり、m2が0〜7の整数である、請求項2に記載の半導体用接着剤。
- 前記化合物の融点が、150℃以下である、請求項1〜3のいずれか一項に記載の半導体用接着剤。
- 前記電子供与性基が、炭素数1〜10のアルキル基である、請求項1〜4のいずれか一項に記載の半導体用接着剤。
- 前記化合物が、フラックス剤である、請求項1〜5のいずれか一項に記載の半導体用接着剤。
- 重量平均分子量が10000以上の高分子成分を更に含有する、請求項1〜6のいずれか一項に記載の半導体用接着剤。
- 半導体チップ及び配線回路基板のそれぞれの接続部が互いに電気的に接続された半導体装置、又は、複数の半導体チップのそれぞれの接続部が互いに電気的に接続された半導体装置の製造方法であって、前記接続部の少なくとも一部を、請求項1〜7のいずれか一項に記載の半導体用接着剤を用いて封止する工程を備える、半導体装置の製造方法。
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TW201335302A (zh) | 2013-09-01 |
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