WO2013125087A1 - 半導体用接着剤、フラックス剤、半導体装置の製造方法及び半導体装置 - Google Patents
半導体用接着剤、フラックス剤、半導体装置の製造方法及び半導体装置 Download PDFInfo
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- WO2013125087A1 WO2013125087A1 PCT/JP2012/075414 JP2012075414W WO2013125087A1 WO 2013125087 A1 WO2013125087 A1 WO 2013125087A1 JP 2012075414 W JP2012075414 W JP 2012075414W WO 2013125087 A1 WO2013125087 A1 WO 2013125087A1
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- semiconductor
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- semiconductor device
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- H05K2201/0332—Structure of the conductor
- H05K2201/0364—Conductor shape
- H05K2201/0367—Metallic bump or raised conductor not used as solder bump
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10954—Other details of electrical connections
- H05K2201/10977—Encapsulated connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a semiconductor adhesive, a fluxing agent, a semiconductor device manufacturing method, and a semiconductor device.
- a COB (Chip On Board) type connection method that is widely used in BGA (Ball Grid Array), CSP (Chip Size Package), and the like also corresponds to the FC connection method.
- the FC connection method is also widely used in a COC (Chip On Chip) type connection method in which connection parts (bumps and wirings) are formed on a semiconductor chip to connect the semiconductor chips (for example, patents). Reference 1).
- chip stack type packages For packages that are strongly required to be further reduced in size, thickness, and functionality, chip stack type packages, POP (Package On Package), TSV (Through-Silicon Via), etc., in which the above connection methods are stacked and multi-staged, etc. has also started to spread widely.
- Such stacking / multi-stage technology arranges semiconductor chips and the like three-dimensionally, so that the package can be made smaller than the two-dimensional arrangement technique. It is also attracting attention as a next-generation semiconductor wiring technology because it is effective for improving semiconductor performance, making noise recommendations, reducing mounting area, and saving power.
- connection part solder, tin, gold, silver, copper, nickel and the like, and conductive materials including these plural types are also used.
- the metal used in the connection part may be oxidized on the surface and an oxide film may be formed, or impurities such as oxide may adhere to the surface, which may cause impurities on the connection surface of the connection part. . If such impurities remain, there is a concern that the connectivity / insulation reliability between the semiconductor chip and the substrate or between the two semiconductor chips is lowered, and the merit of employing the above-described connection method is impaired.
- connection portion known by OSP (Organic Solderability Preservatives) processing with an anti-oxidation film
- OSP Organic Solderability Preservatives
- this anti-oxidation film has a solder wettability during the connection process. May cause a decrease in connectivity and connectivity.
- a metal joint is used for connection between connection parts from the viewpoint of sufficiently ensuring connectivity and insulation reliability. If the semiconductor material does not have sufficient flux activity (removing effect of oxide film and impurities on the metal surface), the oxide film and impurities on the metal surface cannot be removed, a good metal-metal junction is not formed, and conduction May not be secured.
- a semiconductor device manufactured using a semiconductor material has excellent heat resistance and moisture resistance, and at a reflow temperature of around 260 ° C., the semiconductor material is peeled off, the connection failure of the connection portion is sufficiently suppressed. It must be reflowable.
- One embodiment of the present invention provides a semiconductor adhesive containing an epoxy resin, a curing agent, and a compound having a group represented by the following formula (1-1) or (1-2). [Wherein, R 1 represents an electron-donating group, and a plurality of R 1 may be the same or different from each other. ]
- the semiconductor adhesive of this embodiment contains an epoxy resin and a curing agent, and further contains a compound having a group represented by the formula (1-1) or (1-2) to perform metal bonding. Even when applied as a semiconductor adhesive in a flip chip connection method, a semiconductor device having excellent reflow resistance and connection reliability can be manufactured.
- the epoxy resin and the curing agent react with each other and the curing reaction proceeds.
- the carboxylic acid as the flux agent is taken into the curing reaction. That is, an ester bond may be formed by the reaction between the epoxy group of the epoxy resin and the carboxyl group of the flux agent. This ester bond is likely to cause hydrolysis due to moisture absorption or the like, and this decomposition of the ester bond is considered to be a cause of a decrease in adhesive strength after moisture absorption.
- the semiconductor adhesive of this embodiment comprises a group represented by the formula (1-1) or (1-2), that is, a compound having a carboxyl group having two electron donating properties in the vicinity. Contains. Therefore, in this embodiment, the flux activity is sufficiently obtained by the carboxyl group, and even when the above ester bond is formed, the electron density of the ester bond portion is increased by the two electron donating groups, and the ester bond It is thought that decomposition of is suppressed.
- composition change due to moisture absorption or the like hardly occurs, and excellent adhesive force is maintained.
- the above-described action is such that the curing reaction between the epoxy resin and the curing agent is not easily inhibited by the fluxing agent, and due to this action, the connection reliability due to the sufficient progress of the curing reaction between the epoxy resin and the curing agent. The effect of improvement can also be expected.
- the compound having a group represented by the formula (1-1) or (1-2) is preferably a compound having two carboxyl groups. Compared with a compound having one carboxyl group, a compound having two carboxyl groups is less likely to volatilize even at a high temperature during connection, and the generation of voids can be further suppressed. In addition, when a compound having two carboxyl groups is used, the increase in viscosity of the adhesive for semiconductors during storage and connection work is further suppressed compared to the case where a compound having three or more carboxyl groups is used. Thus, the connection reliability of the semiconductor device can be further improved.
- the compound having a group represented by the formula (1-1) or (1-2) is more preferably a compound represented by the following formula (2-1) or (2-2). According to the compound represented by the following formula (2-1) or (2-2), the reflow resistance and the connection reliability of the semiconductor device can be further improved.
- R 1 represents an electron-donating group
- R 2 represents a hydrogen atom or an electron-donating group
- n 1 represents an integer of 0 to 15
- n 2 represents an integer of 1 to 14
- R 1 present may be the same as or different from each other.
- R 2 may be the same as or different from each other.
- the compound having a group represented by the formula (1-1) or (1-2) is more preferably a compound represented by the following formula (3-1) or (3-2).
- the reflow resistance and the connection reliability of the semiconductor device can be further improved.
- R 1 represents an electron donating group
- R 2 represents a hydrogen atom or an electron donating group
- m 1 represents an integer of 0 to 10
- m 2 represents an integer of 0 to 9, R 1 and R 2 present may be the same or different from each other.
- R 1 and R 2 present may be the same or different from each other.
- M 1 in the formula (3-1) is preferably an integer of 0 to 8
- m 2 in the formula (3-2) is preferably an integer of 0 to 7.
- the melting point of the compound having a group represented by the formula (1-1) or (1-2) is preferably 150 ° C. or lower. Such a compound sufficiently exhibits the flux activity before the curing reaction between the epoxy resin and the curing agent occurs. Therefore, according to the semiconductor adhesive containing the flux agent, the semiconductor device further excellent in connection reliability Can be realized.
- the electron donating group is preferably an alkyl group having 1 to 10 carbon atoms.
- the electron donating group is an alkyl group having 1 to 10 carbon atoms, the above-described effects are more remarkably exhibited.
- the adhesive for semiconductor of this embodiment may further contain a polymer component having a weight average molecular weight of 10,000 or more. According to the polymer component, it is possible to improve the heat resistance and film formability of the semiconductor adhesive. In the semiconductor adhesive containing a polymer component, the effect of the present invention by the compound having a group represented by the above formula (1-1) or (1-2) is more remarkably exhibited.
- the shape of the adhesive for a semiconductor according to this aspect is a film shape. Preferably there is.
- the semiconductor device in which the connection portions of the semiconductor chip and the printed circuit board are electrically connected to each other, or the connection portions of the plurality of semiconductor chips are electrically connected to each other. It can be suitably used for sealing at least a part of the connection portion in the semiconductor device. According to such an application, a semiconductor device having excellent reflow resistance and connection reliability is realized.
- Another aspect of the present invention provides a fluxing agent comprising a compound having a group represented by the following formula (1-1) or (1-2). [Wherein, R 1 represents an electron-donating group, and a plurality of R 1 may be the same or different from each other. ]
- the fluxing agent of this aspect it is possible to realize an adhesive for a semiconductor that makes it possible to fabricate a semiconductor device having excellent reflow resistance and connection reliability by a combination with an epoxy resin and a curing agent.
- the compound having a group represented by the formula (1-1) or (1-2) is preferably a compound having two carboxyl groups.
- the compound having a group represented by formula (1-1) or (1-2) is a compound represented by formula (2-1) or (2-2). It is more preferable.
- R 1 represents an electron-donating group
- R 2 represents a hydrogen atom or an electron-donating group
- n 1 represents an integer of 0 to 15
- n 2 represents an integer of 1 to 14
- R 1 present may be the same as or different from each other.
- R 2 may be the same as or different from each other.
- the compound having a group represented by formula (1-1) or (1-2) is a compound represented by formula (3-1) or (3-2). More preferably.
- R 1 represents an electron donating group
- R 2 represents a hydrogen atom or an electron donating group
- m 1 represents an integer of 0 to 10
- m 2 represents an integer of 0 to 9, R 1 and R 2 present may be the same or different from each other.
- m 1 in formula (3-1) is preferably an integer of 0 to 8
- m 2 in formula (3-2) is preferably an integer of 0 to 7. .
- the electron donating group is preferably an alkyl group having 1 to 10 carbon atoms.
- the flux agent of this embodiment can be suitably used as a flux agent blended in an adhesive for semiconductor containing an epoxy resin and a curing agent.
- a semiconductor device in which respective connection portions of a semiconductor chip and a printed circuit board are electrically connected to each other, or each connection portion of a plurality of semiconductor chips is electrically connected to each other.
- a method for manufacturing a semiconductor device comprising: a step of sealing at least a part of the connection portion with the adhesive for semiconductor device.
- the reflow resistance and the connection reliability of the semiconductor device can be improved by using the semiconductor adhesive.
- Another aspect of the present invention also provides a semiconductor device obtained by the above manufacturing method.
- the semiconductor device of this aspect is excellent in reflow resistance and connection reliability.
- a semiconductor adhesive that enables the production of a semiconductor device having excellent reflow resistance and connection reliability.
- the manufacturing method and semiconductor device of a semiconductor device using the said adhesive agent for semiconductors are provided.
- the flux agent which enables realization of the said adhesive agent for semiconductors is provided.
- the adhesive for semiconductors of this embodiment includes an epoxy resin (hereinafter sometimes referred to as “component (a)”), a curing agent (hereinafter sometimes referred to as “component (b)”), and the following formula (1). -1) or a compound having a group represented by (1-2) (hereinafter sometimes referred to as “component (c)”).
- component (a) an epoxy resin
- component (b) a curing agent
- component (c) a compound having a group represented by (1-2)
- R 1 represents an electron donating group, and a plurality of R 1 may be the same or different from each other.
- the semiconductor adhesive of the present embodiment by containing an epoxy resin and a curing agent, and further containing a compound having a group represented by the formula (1-1) or (1-2), Even when applied as a semiconductor adhesive in a flip-chip connection method in which metal bonding is performed, a semiconductor device having excellent reflow resistance and connection reliability can be manufactured.
- the epoxy resin and the curing agent react with each other and the curing reaction proceeds.
- the carboxylic acid as the flux agent is taken into the curing reaction. That is, an ester bond may be formed by the reaction between the epoxy group of the epoxy resin and the carboxyl group of the flux agent. This ester bond is likely to cause hydrolysis due to moisture absorption or the like, and this decomposition of the ester bond is considered to be a cause of a decrease in adhesive strength after moisture absorption.
- the semiconductor adhesive of the present embodiment is a compound having a group represented by the formula (1-1) or (1-2), that is, a carboxyl group having two electron donating properties in the vicinity thereof. Contains. Therefore, in the adhesive for semiconductors of this embodiment, the flux activity is sufficiently obtained by the carboxyl group, and even when the above ester bond is formed, the electrons in the ester bond portion are formed by the two electron donating groups. It is thought that the density increases and the decomposition of the ester bond is suppressed.
- composition change due to moisture absorption or the like hardly occurs, and excellent adhesive force is maintained.
- the above-described action is such that the curing reaction between the epoxy resin and the curing agent is not easily inhibited by the fluxing agent, and due to this action, the connection reliability due to the sufficient progress of the curing reaction between the epoxy resin and the curing agent. The effect of improvement can also be expected.
- the adhesive for semiconductors of this embodiment may contain a polymer component having a weight average molecular weight of 10,000 or more (hereinafter referred to as “component (d)” in some cases) as necessary. Moreover, the adhesive for semiconductors of this embodiment may contain a filler (hereinafter sometimes referred to as “(e) component”) as necessary.
- (A) Component Epoxy Resin Any epoxy resin can be used without particular limitation as long as it has two or more epoxy groups in the molecule.
- the component (a) for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, naphthalene type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, phenol aralkyl type epoxy resin, biphenyl type epoxy resin, triphenyl A methane type epoxy resin, a dicyclopentadiene type epoxy resin, and various polyfunctional epoxy resins can be used. These can be used alone or as a mixture of two or more.
- the thermal weight loss rate at 250 ° C. is 5% or less. It is preferable to use an epoxy resin. In the case of 300 ° C., it is preferable to use an epoxy resin having a thermal weight loss rate at 300 ° C. of 5% or less.
- component (a) is, for example, 5 to 75% by mass, preferably 10 to 50% by mass, and more preferably 15 to 35% by mass, based on the total amount of the adhesive for semiconductors.
- (B) Component Curing Agent
- the (b) component include a phenol resin curing agent, an acid anhydride curing agent, an amine curing agent, an imidazole curing agent, and a phosphine curing agent.
- the component contains a phenolic hydroxyl group, an acid anhydride, an amine or an imidazole, it exhibits a flux activity that suppresses the formation of an oxide film at the connection part, and improves connection reliability and insulation reliability. it can.
- each curing agent will be described.
- Phenolic resin-based curing agent The phenolic resin-based curing agent is not particularly limited as long as it has two or more phenolic hydroxyl groups in the molecule.
- phenol novolak resin, cresol novolac resin, phenol aralkyl resin Cresol naphthol formaldehyde polycondensate, triphenylmethane type polyfunctional phenol resin and various polyfunctional phenol resins can be used. These can be used alone or as a mixture of two or more.
- the equivalent ratio of the phenol resin curing agent to the component (a) is 0.3 to 1.5 from the viewpoint of good curability, adhesiveness and storage stability. It is preferably 0.4 to 1.0, more preferably 0.5 to 1.0.
- the equivalent ratio is 1.5 or less, the unreacted phenolic hydroxyl group does not remain excessively, and the water absorption is increased. It tends to be kept low and the insulation reliability improves.
- Acid anhydride curing agent examples include methylcyclohexanetetracarboxylic dianhydride, trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic dianhydride, and ethylene glycol bis.
- Anhydro trimellitate can be used. These can be used alone or as a mixture of two or more.
- the equivalent ratio of the acid anhydride-based curing agent to the component (a) is 0.3 to 1. from the viewpoint of good curability, adhesiveness, and storage stability. 5 is preferable, 0.4 to 1.0 is more preferable, and 0.5 to 1.0 is still more preferable.
- the equivalence ratio is 0.3 or more, the curability is improved and the adhesive force tends to be improved.
- the equivalent ratio is 1.5 or less, the unreacted acid anhydride does not remain excessively, and the water absorption rate is increased. It tends to be kept low and the insulation reliability improves.
- Amine-based curing agent for example, dicyandiamide can be used.
- the equivalent ratio of the amine curing agent to the component (a) is preferably 0.3 to 1.5 from the viewpoint of good curability, adhesion and storage stability. 4-1.0 is more preferable, and 0.5-1.0 is still more preferable. If the equivalence ratio is 0.3 or more, the curability tends to be improved and the adhesive strength tends to be improved. If the equivalent ratio is 1.5 or less, excessive unreacted amine does not remain and the insulation reliability is improved. Tend to.
- Imidazole-based curing agent examples include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1- Cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6 -[2'-methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1')]-ethyl-s-triazine, 2, 4-Diamino-6- [2′-ethyl-4′-methylimidazolyl
- the content of the imidazole curing agent is preferably 0.1 to 20 parts by mass, more preferably 0.1 to 10 parts by mass with respect to 100 parts by mass of component (a). If the content of the imidazole-based curing agent is 0.1 parts by mass or more, the curability tends to be improved, and if it is 20 parts by mass or less, the adhesive for a semiconductor may be cured before a metal bond is formed. There is a tendency that poor connection is less likely to occur.
- (V) Phosphine curing agent examples include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra (4-methylphenyl) borate and tetraphenylphosphonium (4-fluorophenyl) borate. Can be mentioned.
- the content of the phosphine-based curing agent is preferably 0.1 to 10 parts by mass and more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass of the component (a). If the content of the phosphine-based curing agent is 0.1 parts by mass or more, the curability tends to be improved, and if it is 10 parts by mass or less, the adhesive for a semiconductor may be cured before a metal bond is formed. There is a tendency that poor connection is less likely to occur.
- a phenol resin curing agent, an acid anhydride curing agent, and an amine curing agent can be used singly or as a mixture of two or more.
- the imidazole-based curing agent and the phosphine-based curing agent may each be used alone, but may be used together with a phenol resin-based curing agent, an acid anhydride-based curing agent, or an amine-based curing agent.
- the component (b) is from the group consisting of a phenol resin curing agent, an amine curing agent, an imidazole curing agent and a phosphine curing agent.
- the selected curing agent is preferred.
- the component (b) is a phenol resin curing agent, an amine curing More preferably, the curing agent is selected from the group consisting of a curing agent and an imidazole curing agent.
- the adhesive for a semiconductor contains a phenol resin curing agent, an acid anhydride curing agent or an amine curing agent as the component (b), it exhibits a flux activity for removing an oxide film and further improves connection reliability. Can do.
- Component (c) Compound having group represented by formula (1-1) or (1-2)
- Component has group represented by formula (1-1) or (1-2)
- a compound hereinafter referred to as “flux compound” in some cases).
- the component (c) is a compound having flux activity, and functions as a flux agent in the semiconductor adhesive of this embodiment.
- one type of flux compound may be used alone, or two or more types of flux compounds may be used in combination.
- R 1 represents an electron donating group, and a plurality of R 1 may be the same or different from each other.
- the electron donating group examples include an alkyl group, a hydroxyl group, an amino group, an alkoxy group, and an alkylamino group.
- the electron donating group is preferably a group that does not easily react with other components (for example, the epoxy resin of component (a)). Specifically, an alkyl group, a hydroxyl group, or an alkoxy group is preferable, and an alkyl group is more preferable.
- the electron donating group When the electron donating property of the electron donating group becomes strong, the effect of suppressing the decomposition of the ester bond tends to be easily obtained. Moreover, when the steric hindrance of the electron donating group is large, an effect of suppressing the reaction between the carboxyl group and the epoxy resin is easily obtained.
- the electron donating group preferably has a good balance of electron donating properties and steric hindrance.
- an alkyl group having 1 to 10 carbon atoms is preferable, and an alkyl group having 1 to 5 carbon atoms is more preferable.
- the carbon number of the alkyl group increases, the electron donating property and steric hindrance tend to increase. Since the alkyl group having the carbon number in the above range is excellent in the balance between electron donating property and steric hindrance, the effect of the present invention is more remarkably exhibited by the alkyl group.
- the alkyl group may be linear or branched, but is preferably linear.
- the number of carbon atoms of the alkyl group is preferably not more than the number of carbon atoms in the main chain of the flux compound from the viewpoint of the balance between electron donating properties and steric hindrance.
- the flux compound is a compound represented by the following formula (2-1) or (2-2) and the electron donating group is a linear alkyl group
- the carbon number of the alkyl group is the flux The number of carbon atoms in the main chain of the compound (n 1 +1 or n 2 +2) or less is preferable.
- an alkoxy group having 1 to 10 carbon atoms is preferable, and an alkoxy group having 1 to 5 carbon atoms is more preferable.
- an alkoxy group having 1 to 5 carbon atoms is more preferable.
- An alkoxy group having a carbon number in the above range is excellent in the balance between electron donating property and steric hindrance, and therefore the effect of the present invention is more remarkably exhibited by the alkoxy group.
- the alkyl group portion of the alkoxy group may be linear or branched, and among them, linear is preferable.
- the number of carbon atoms of the alkoxy group is preferably not more than the number of carbon atoms in the main chain of the flux compound from the viewpoint of the balance between electron donating properties and steric hindrance.
- the flux compound is a compound represented by the following formula (2-1) or (2-2) and the electron donating group is a linear alkoxy group
- the number of carbons of the alkoxy group is the flux The number of carbon atoms in the main chain of the compound (n 1 +1 or n 2 +2) or less is preferable.
- alkylamino group examples include a monoalkylamino group and a dialkylamino group.
- a monoalkylamino group having 1 to 10 carbon atoms is preferable, and a monoalkylamino group having 1 to 5 carbon atoms is more preferable.
- the alkyl group portion of the monoalkylamino group may be linear or branched, and is preferably linear.
- dialkylamino group a dialkylamino group having 2 to 20 carbon atoms is preferable, and a dialkylamino group having 2 to 10 carbon atoms is more preferable.
- the alkyl group portion of the dialkylamino group may be linear or branched, and is preferably linear.
- the flux compound is preferably a compound having two carboxyl groups (dicarboxylic acid). Compared with a compound having one carboxyl group (monocarboxylic acid), a compound having two carboxyl groups is less likely to volatilize even at a high temperature during connection, and the generation of voids can be further suppressed. In addition, when a compound having two carboxyl groups is used, the increase in viscosity of the adhesive for semiconductors during storage and connection work is further suppressed compared to the case where a compound having three or more carboxyl groups is used. Thus, the connection reliability of the semiconductor device can be further improved.
- a compound represented by the following formula (2-1) or (2-2) can be preferably used. According to the compound represented by the following formula (2-1) or (2-2), the reflow resistance and the connection reliability of the semiconductor device can be further improved.
- R 1 represents an electron donating group
- R 2 represents a hydrogen atom or an electron donating group
- n 1 represents 0 or an integer of 1 or more.
- a plurality of R 1 may be the same as or different from each other.
- R 2 may be the same as or different from each other.
- R 1 represents an electron donating group
- R 2 represents a hydrogen atom or an electron donating group
- n 2 represents an integer of 1 or more.
- a plurality of R 1 may be the same as or different from each other.
- R 2 may be the same as or different from each other.
- N 1 in Formula (2-1) is preferably 1 or more.
- n 1 in the formula (2-1) is preferably 15 or less, more preferably 11 or less, further preferably 9 or less, and may be 7 or less or 5 or less. When n 1 is 15 or less, further excellent connection reliability can be obtained.
- N 2 in the formula (2-2) is preferably 14 or less, more preferably 10 or less, further preferably 8 or less, and may be 6 or less or 4 or less. When n 2 is 10 or less, further excellent connection reliability can be obtained.
- the flux compound a compound represented by the following formula (3-1) or (3-2) is more preferable. According to the compound represented by the following formula (3-1) or (3-2), the reflow resistance and the connection reliability of the semiconductor device can be further improved.
- R 1 represents an electron donating group
- R 2 represents a hydrogen atom or an electron donating group
- m 1 represents 0 or an integer of 1 or more.
- a plurality of R 1 and R 2 may be the same or different from each other.
- R 1 represents an electron donating group
- R 2 represents a hydrogen atom or an electron donating group
- m 2 represents 0 or an integer of 1 or more.
- a plurality of R 1 and R 2 may be the same or different from each other.
- M 1 in the formula (3-1) is preferably 10 or less, more preferably 8 or less, and still more preferably 6 or less. When m 1 is 10 or less, further excellent connection reliability can be obtained.
- M 2 in the formula (3-1) is preferably 9 or less, more preferably 7 or less, and still more preferably 5 or less. When m 2 is 9 or less, further excellent connection reliability can be obtained.
- the melting point tends to be low, and the connection reliability of the semiconductor device may be further improved. If the flux compound has a symmetrical structure, the melting point tends to be high, but even in this case, the effect of the present invention can be sufficiently obtained. In particular, when the melting point is sufficiently low at 150 ° C. or less, even if the flux compound has a symmetric structure, connection reliability comparable to that in the case of an asymmetric structure can be obtained.
- the symmetric structure means, for example, the case where R 1 and R 2 are all the same group in the formula (3-1).
- R 2 is preferably a hydrogen atom.
- Such a compound is a flux compound having an asymmetric structure, and according to such a compound, the connection reliability of the semiconductor device can be further improved.
- Examples of the flux compound include an electron donating group at the 2-position of a dicarboxylic acid selected from succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid and dodecanedioic acid. Two substituted compounds can be used.
- Examples of the flux compound include glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, and dodecanedioic acid.
- One substituted compound can also be used.
- the melting point of the flux compound is preferably 150 ° C. or lower, more preferably 140 ° C. or lower, and further preferably 130 ° C. or lower. Such a flux compound is likely to exhibit sufficient flux activity before the curing reaction between the epoxy resin and the curing agent occurs. Therefore, according to the semiconductor adhesive containing such a flux compound, it is possible to realize a semiconductor device that is further excellent in connection reliability. Further, the melting point of the flux compound is preferably 25 ° C. or higher, and more preferably 50 ° C. or higher. The flux compound is preferably solid at room temperature (25 ° C.).
- the melting point of the flux compound can be measured using a general melting point measuring apparatus.
- the sample for measuring the melting point is required to reduce the temperature deviation in the sample by being pulverized into fine powder and using a small amount.
- a capillary tube with one end closed is often used.
- some measuring apparatuses are sandwiched between two microscope cover glasses to form a container. If the temperature is rapidly increased, a temperature gradient is generated between the sample and the thermometer, resulting in a measurement error. Therefore, the heating at the time of measuring the melting point can be measured at an increase rate of 1 ° C. or less per minute. desirable.
- the sample before melting is opaque due to irregular reflection on the surface.
- the temperature at which the appearance of the sample begins to become transparent is taken as the lower limit of the melting point
- the temperature at which the sample has completely melted is taken as the upper limit.
- the most classic device is a device in which a capillary tube packed with a sample is attached to a double tube thermometer and heated in a warm bath.
- a highly viscous liquid is used as the liquid in the warm bath, and concentrated sulfuric acid or silicon oil is often used, so that the sample comes near the reservoir at the tip of the thermometer.
- the melting point measuring device it is possible to use a device that uses a metal heat block for heating and automatically determines the melting point while adjusting the heating while measuring the light transmittance.
- the melting point of 150 ° C. or lower means that the upper limit of the melting point is 150 ° C. or lower, and the melting point of 25 ° C. or higher means that the lower limit of the melting point is 25 ° C. or higher. means.
- the content of the component (c) is preferably 0.5 to 10% by mass and more preferably 0.5 to 5% by mass based on the total amount of the adhesive for semiconductor.
- Component (d) Polymer component having a weight average molecular weight of 10,000 or more
- the adhesive for a semiconductor according to the present embodiment contains a polymer component (component (d)) having a weight average molecular weight of 10,000 or more, if necessary. May be.
- the adhesive for semiconductors containing a component is further excellent in heat resistance and film formation.
- phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, acrylic resin, polyester resin, Polyethylene resin, polyethersulfone resin, polyetherimide resin, polyvinyl acetal resin, urethane resin and acrylic rubber are preferred.
- phenoxy resin, polyimide resin, acrylic rubber, acrylic resin, cyanate ester resin and polycarbodiimide resin are more preferable, and phenoxy resin, polyimide resin, acrylic rubber and acrylic resin are more preferable.
- these components (d) can be used alone or as a mixture or copolymer of two or more. However, the (d) component does not include the epoxy resin as the (a) component.
- the weight average molecular weight of a component is 10,000 or more, It is preferable that it is 20000 or more, It is more preferable that it is 30000 or more. According to such component (d), the heat resistance and film formability of the semiconductor adhesive can be further improved.
- the weight average molecular weight of the component (d) is preferably 1000000 or less, and more preferably 500000 or less. According to such a component (d), the effect of high heat resistance is obtained.
- the said weight average molecular weight shows the weight average molecular weight of polystyrene conversion measured using GPC (gel permeation chromatography, Gel Permeation Chromatography).
- GPC gel permeation chromatography, Gel Permeation Chromatography
- Apparatus name HCL-8320GPC, UV-8320 (product name, manufactured by Tosoh Corporation), or HPLC-8020 (product name, manufactured by Tosoh Corporation)
- THF tetrahydrofuran
- DMF N, N-dimethylformamide
- DMA N, N-dimethylacetamide
- NMP N-methylpyrrolidone
- the concentration of phosphoric acid is 0.05 to 0.1 mol / L (usually 0.06 mol / L)
- the concentration of LiBr is 0.5 to 1.0 mol / L ( Usually, it may be adjusted to 0.63 mol / L).
- Flow rate 0.30 to 1.5 mL / min Standard material: Polystyrene
- the ratio C a / C d (mass ratio) of the content C a of the component (a) to the content C d of the component (d) is 0.01 to 5 is preferable, 0.05 to 3 is more preferable, and 0.1 to 2 is even more preferable.
- the semiconductor adhesive of the present embodiment may contain a filler ((e) component) as necessary.
- the viscosity of the semiconductor adhesive, the physical properties of the cured product of the semiconductor adhesive, and the like can be controlled by the component (e). Specifically, according to the component (e), for example, it is possible to suppress the generation of voids at the time of connection and to reduce the moisture absorption rate of the cured product of the adhesive for semiconductor.
- component insulating inorganic fillers, whiskers, resin fillers, and the like can be used.
- component 1 type may be used independently and 2 or more types may be used together.
- Examples of the insulating inorganic filler include glass, silica, alumina, titanium oxide, carbon black, mica, and boron nitride. Among these, silica, alumina, titanium oxide, and boron nitride are preferable, and silica, alumina, and boron nitride are more preferable.
- whiskers examples include aluminum borate, aluminum titanate, zinc oxide, calcium silicate, magnesium sulfate, and boron nitride.
- Examples of the resin filler include fillers made of resins such as polyurethane and polyimide.
- Resin fillers are excellent in improving connection reliability because they have a smaller coefficient of thermal expansion than organic components (such as epoxy resins and curing agents). Moreover, according to the resin filler, the viscosity of the semiconductor adhesive can be easily adjusted. Moreover, since the resin filler is excellent in the function which relieves stress compared with an inorganic filler, according to the resin filler, peeling in a reflow test or the like can be further suppressed.
- the inorganic filler has a smaller coefficient of thermal expansion than that of the resin filler, the inorganic filler can realize a low coefficient of thermal expansion of the adhesive composition.
- many inorganic fillers are general-purpose products whose particle size is controlled, they are also preferable for viscosity adjustment.
- the resin filler and the inorganic filler each have an advantageous effect, either one may be used depending on the application, or both may be mixed and used in order to exhibit both functions.
- the shape, particle size and content of the component are not particularly limited. Further, the component (e) may have its physical properties appropriately adjusted by surface treatment.
- the content of the component (e) is preferably 10 to 80% by mass and more preferably 15 to 60% by mass based on the total amount of the adhesive for semiconductor.
- the component is comprised with the insulator. If the component (e) is composed of a conductive material (for example, solder, gold, silver, copper, etc.), the insulation reliability (particularly HAST resistance) may be reduced.
- a conductive material for example, solder, gold, silver, copper, etc.
- blend additives such as antioxidant, a silane coupling agent, a titanium coupling agent, a leveling agent, an ion trap agent, with the adhesive agent for semiconductors of this embodiment.
- additives such as antioxidant, a silane coupling agent, a titanium coupling agent, a leveling agent, an ion trap agent, with the adhesive agent for semiconductors of this embodiment.
- These can be used individually by 1 type or in combination of 2 or more types. About these compounding quantities, what is necessary is just to adjust suitably so that the effect of each additive may express.
- the semiconductor adhesive of this embodiment can be formed into a film.
- An example of a method for producing a film adhesive using the semiconductor adhesive of this embodiment is shown below.
- the (a) component, the (b) component and the (c) component, and the (d) component and the (e) component, which are added as necessary, are added to the organic solvent and mixed by stirring, kneading, etc.
- the resin varnish is prepared by dissolving or dispersing.
- the organic solvent is removed by heating, so that the film is adhered on the base film. An agent can be formed.
- the thickness of the film adhesive is not particularly limited. For example, it is preferably 0.5 to 1.5 times the height of the bump before connection, more preferably 0.6 to 1.3 times. More preferably, it is 0.7 to 1.2 times.
- the thickness of the film adhesive When the thickness of the film adhesive is 0.5 times or more the height of the bump, generation of voids due to unfilled adhesive can be sufficiently suppressed, and connection reliability can be further improved. . In addition, when the thickness is 1.5 times or less, the amount of the adhesive pushed out from the chip connection region at the time of connection can be sufficiently suppressed, so that adhesion of the adhesive to unnecessary portions is sufficiently prevented. be able to. If the thickness of the film adhesive is larger than 1.5 times, the bumps must be removed from the adhesive, and conduction failure tends to occur. In addition, it is not preferable to remove a large amount of resin against weakening of the bump (miniaturization of bump diameter) due to narrow pitch and multiple pins because damage to the bump increases.
- the thickness of the film adhesive is preferably 2.5 to 150 ⁇ m, more preferably 3.5 to 120 ⁇ m.
- organic solvent used for preparing the resin varnish those having characteristics capable of uniformly dissolving or dispersing each component are preferable.
- dimethylformamide, dimethylacetamide, N-methyl-2-pyrrolidone, dimethyl sulfoxide, diethylene glycol dimethyl ether examples include toluene, benzene, xylene, methyl ethyl ketone, tetrahydrofuran, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, dioxane, cyclohexanone, and ethyl acetate.
- These organic solvents can be used alone or in combination of two or more.
- Stir mixing and kneading in preparing the resin varnish can be performed using, for example, a stirrer, a raking machine, a three roll, a ball mill, a bead mill, or a homodisper.
- the base film is not particularly limited as long as it has heat resistance capable of withstanding the heating conditions when the organic solvent is volatilized.
- Polyolefin film such as polypropylene film and polymethylpentene film, polyethylene terephthalate film, polyethylene naphthalate Examples thereof include polyester films such as films, polyimide films, and polyetherimide films.
- the base film is not limited to a single layer made of these films, and may be a multilayer film made of two or more materials.
- the drying conditions when the organic solvent is volatilized from the resin varnish applied to the base film is preferably set so that the organic solvent is sufficiently volatilized, specifically, 50 to 200 ° C. for 0.1 to 90 minutes. It is preferable to perform heating.
- the organic solvent is preferably removed to 1.5% by mass or less based on the total amount of the film adhesive.
- the semiconductor adhesive of this embodiment may be directly formed on the wafer.
- the resin varnish may be directly spin coated on the wafer to form a film, and then the organic solvent may be removed to form the semiconductor adhesive directly on the wafer.
- FIG. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor device of the present invention.
- a semiconductor device 100 includes a semiconductor chip 10 and a substrate (circuit wiring board) 20 that face each other, and wirings 15 that are respectively disposed on mutually facing surfaces of the semiconductor chip 10 and the substrate 20.
- the connection bump 30 connects the semiconductor chip 10 and the wiring 15 of the substrate 20 to each other, and the adhesive material 40 is filled in the gap between the semiconductor chip 10 and the substrate 20 without any gap.
- the semiconductor chip 10 and the substrate 20 are flip-chip connected by wiring 15 and connection bumps 30.
- the wiring 15 and the connection bump 30 are sealed with an adhesive material 40 and are shielded from the external environment.
- the semiconductor device 200 includes a semiconductor chip 10 and a substrate 20 that face each other, a bump 32 that is disposed on a surface that faces the semiconductor chip 10 and the substrate 20, respectively, It has the adhesive material 40 with which the space
- the semiconductor chip 10 and the substrate 20 are flip-chip connected by connecting opposing bumps 32 to each other.
- the bumps 32 are sealed with an adhesive material 40 and are shielded from the external environment.
- the adhesive material 40 is a cured product of the adhesive for semiconductor of this embodiment.
- FIG. 2 is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present invention.
- the semiconductor device 300 is the same as the semiconductor device 100 except that two semiconductor chips 10 are flip-chip connected by wirings 15 and connection bumps 30.
- the semiconductor device 400 is the same as the semiconductor device 200 except that the two semiconductor chips 10 are flip-chip connected by the bumps 32.
- the semiconductor chip 10 is not particularly limited, and an elemental semiconductor composed of the same kind of element such as silicon or germanium, or a compound semiconductor such as gallium arsenide or indium phosphide can be used.
- the substrate 20 is not particularly limited as long as it is a circuit board, and an unnecessary portion of a metal film is etched on the surface of an insulating substrate mainly composed of glass epoxy, polyimide, polyester, ceramic, epoxy, bismaleimide triazine, or the like.
- Connections such as wiring 15 and bumps 32 are mainly composed of gold, silver, copper, and solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper). , Nickel, tin, lead and the like, and may contain a plurality of metals.
- gold, silver, and copper are preferable, and silver and copper are more preferable from the viewpoint of providing a package with excellent electrical and thermal conductivity of the connection portion.
- silver, copper, and solder are preferable, copper and solder are more preferable, and solder is more preferable, based on being inexpensive. If an oxide film is formed on the surface of a metal at room temperature, the productivity may decrease or the cost may increase. From the viewpoint of suppressing the formation of the oxide film, gold, silver, copper and solder are preferable, and gold, silver Solder is more preferable, and gold and silver are more preferable.
- the surface of the wiring 15 and bump 32 is mainly composed of gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper), tin, nickel, etc.
- the metal layer may be formed by plating, for example. This metal layer may be composed of only a single component or may be composed of a plurality of components.
- the metal layer may have a structure in which a single layer or a plurality of metal layers are stacked.
- the semiconductor device of this embodiment may have a plurality of stacked structures (packages) as shown in the semiconductor devices 100 to 400.
- the semiconductor devices 100 to 400 include gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper), tin, nickel, etc. May be electrically connected to each other by a bump or wiring including
- FIG. 3 is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present invention, which is a semiconductor device using the TSV technology.
- the wiring 15 formed on the interposer 50 is connected to the wiring 15 of the semiconductor chip 10 via the connection bumps 30, so that the semiconductor chip 10 and the interposer 50 are flip-chip connected. ing.
- the gap between the semiconductor chip 10 and the interposer 50 is filled with the adhesive material 40 without a gap.
- the semiconductor chip 10 On the surface of the semiconductor chip 10 opposite to the interposer 50, the semiconductor chip 10 is repeatedly stacked via the wiring 15, the connection bumps 30, and the adhesive material 40.
- the wirings 15 on the pattern surface on the front and back sides of the semiconductor chip 10 are connected to each other by through electrodes 34 filled in holes that penetrate the inside of the semiconductor chip 10.
- a material of the penetration electrode 34 copper, aluminum, etc. can be used.
- Such a TSV technology makes it possible to acquire a signal from the back surface of a semiconductor chip that is not normally used. Furthermore, since the through electrode 34 passes vertically through the semiconductor chip 10, the distance between the semiconductor chips 10 facing each other and between the semiconductor chip 10 and the interposer 50 can be shortened and flexible connection is possible.
- the semiconductor adhesive of the present embodiment can be applied as a semiconductor adhesive between the semiconductor chips 10 facing each other, or between the semiconductor chip 10 and the interposer 50 in such a TSV technology.
- a semiconductor chip can be directly mounted on a motherboard without using an interposer.
- the semiconductor adhesive of this embodiment can also be applied when such a semiconductor chip is directly mounted on a mother board.
- the adhesive for semiconductors of this embodiment can be applied also when sealing the space
- FIG. 4 is a process cross-sectional view schematically showing one embodiment of a method for manufacturing a semiconductor device of the present invention.
- solder resist 60 having openings at positions where connection bumps 30 are formed is formed on a substrate 20 having wirings 15.
- the solder resist 60 is not necessarily provided. However, by providing a solder resist on the substrate 20, it is possible to suppress the occurrence of a bridge between the wirings 15 and improve the connection reliability and insulation reliability.
- the solder resist 60 can be formed using, for example, commercially available solder resist ink for packages. Specific examples of the commercially available solder resist ink for packaging include SR series (trade name, manufactured by Hitachi Chemical Co., Ltd.) and PSR4000-AUS series (trade name, manufactured by Taiyo Ink Manufacturing Co., Ltd.).
- connection bumps 30 are formed in the openings of the solder resist 60.
- a film-like adhesive for semiconductor hereinafter referred to as “film-like adhesive” in some cases
- the film adhesive 41 can be attached by a hot press, roll lamination, vacuum lamination, or the like. The supply area and thickness of the film adhesive 41 are appropriately set according to the size of the semiconductor chip 10 and the substrate 20 and the height of the connection bump 30.
- the wiring 15 and the connection bumps 30 of the semiconductor chip 10 are aligned using a connection device such as a flip chip bonder. Subsequently, the semiconductor chip 10 and the substrate 20 are pressure-bonded while being heated at a temperature equal to or higher than the melting point of the connection bump 30 to connect the semiconductor chip 10 and the substrate 20 as shown in FIG. A gap between the semiconductor chip 10 and the substrate 20 is sealed and filled with an adhesive material 40 that is a cured product of the adhesive 41. Thus, the semiconductor device 600 is obtained.
- the semiconductor chip 10 is temporarily fixed (in a state where the adhesive for semiconductor is interposed) and heated in a reflow furnace to melt the connection bumps 30. And the substrate 20 may be connected. Since it is not always necessary to form a metal joint at the temporary fixing stage, it can be crimped with a low load, in a short time, and at a low temperature as compared with the above-mentioned method of crimping while heating. Deterioration of the part can be suppressed.
- the heating temperature is preferably a temperature at which curing of the film adhesive proceeds, and more preferably a temperature at which the film adhesive is completely cured.
- the heating temperature and the heating time are appropriately set.
- the substrate 20 may be connected after the film adhesive 41 is pasted on the semiconductor chip 10.
- the gap between the semiconductor chip 10 and the substrate 20 may be filled with a paste-like semiconductor adhesive and cured.
- the semiconductor adhesive is supplied onto the semiconductor chip 10 by supplying the semiconductor adhesive to the semiconductor wafer connected with the plurality of semiconductor chips 10 and then dicing into pieces.
- the obtained structure may be obtained.
- the semiconductor adhesive is in the form of a paste, there is no particular limitation, but the wiring and bumps on the semiconductor chip 10 may be embedded and the thickness made uniform by a coating method such as spin coating. In this case, since the supply amount of the resin becomes constant, productivity is improved and generation of voids due to insufficient embedding and a decrease in dicing property can be suppressed.
- the adhesive for semiconductor is in the form of a film
- it is not particularly limited, but the film-like so as to embed wiring and bumps on the semiconductor chip 10 by a sticking method such as heating press, roll lamination, and vacuum lamination.
- a semiconductor adhesive may be supplied.
- productivity is improved, and generation of voids due to insufficient embedding and a decrease in dicing property can be suppressed.
- the method of laminating a film-like semiconductor adhesive tends to improve the flatness of the semiconductor adhesive after supply. Therefore, the form of the semiconductor adhesive is preferably a film. Further, the film adhesive is excellent in applicability to various processes, handling properties, and the like.
- the connectivity of the semiconductor device tends to be further ensured.
- the flux agent of the present embodiment tends to have a low melting point and tends to exhibit flux activity.
- the heating at the time of laminating the film adhesive on the semiconductor wafer causes the flux activity to be developed, and at least a part of the oxide film on the bump surface on the semiconductor wafer is reduced and removed.
- connection load is set in consideration of variations in the number and height of the connection bumps 30, the amount of deformation of the wiring that receives the connection bumps 30 due to pressurization, or the bumps of the connection portions.
- the connection temperature is preferably such that the temperature of the connection portion is equal to or higher than the melting point of the connection bump 30, but may be any temperature at which metal connection of each connection portion (bump or wiring) is formed.
- the connection bump 30 is a solder bump, about 240 ° C. or higher is preferable.
- connection time at the time of connection varies depending on the constituent metal of the connection part, but a shorter time is preferable from the viewpoint of improving productivity.
- connection time is preferably 20 seconds or less, more preferably 10 seconds or less, and even more preferably 5 seconds or less.
- connection time is preferably 60 seconds or less.
- the semiconductor adhesive of this embodiment exhibits excellent reflow resistance and connection reliability.
- one aspect of the present invention relates to the use of a compound having a group represented by the formula (1-1) or (1-2) as a fluxing agent blended in a semiconductor adhesive.
- Another aspect of the present invention relates to the use of a compound having a group represented by formula (1-1) or (1-2) for the production of a semiconductor adhesive.
- Another aspect of the present invention relates to a fluxing agent containing a compound having a group represented by the formula (1-1) or (1-2).
- Another aspect of the present invention is the use of a fluxing agent containing a compound having a group represented by formula (1-1) or (1-2) for the production of a semiconductor adhesive. it can.
- Another aspect of the present invention is the use of a composition containing an epoxy resin, a curing agent, and a compound having a group represented by formula (1-1) or (1-2) as a semiconductor adhesive. It can also be said. Furthermore, another aspect of the present invention relates to the production of a semiconductor adhesive comprising a composition containing an epoxy resin, a curing agent, and a compound having a group represented by formula (1-1) or (1-2). It can also be used for.
- the weight average molecular weight (Mw) of the polymer component is determined by the GPC method. Details of the GPC method are as follows. Device name: HPLC-8020 (product name, manufactured by Tosoh Corporation) Column: 2 pieces of GMHXL + 1 piece of G-2000XL Detector: RI detector Column temperature: 35 ° C Flow rate: 1 mL / min Standard material: Polystyrene
- the obtained resin varnish is coated on a base film (trade name “Purex A53” manufactured by Teijin DuPont Films Ltd.) with a small precision coating device (Yurui Seiki), and a clean oven (manufactured by ESPEC) And dried (70 ° C./10 min) to obtain a film adhesive.
- Example 2 Comparative Examples 1 to 5
- Example 2 A film-like adhesive of Example 2 and film-like adhesives of Comparative Examples 1 to 5 were prepared in the same manner as in Example 1 except that the composition of the used material was changed as shown in Table 1 below. .
- the film-like adhesive prepared in the examples or comparative examples is cut out to a predetermined size (length 8 mm ⁇ width 8 mm ⁇ thickness 0.045 mm), and a glass epoxy substrate (glass epoxy substrate: 420 ⁇ m thickness, copper wiring: 9 ⁇ m thickness)
- a semiconductor chip with solder bumps (chip size: vertical 7.3 mm x horizontal 7.3 mm x thickness 0.15 mm, bump height: copper pillar + solder meter approximately 40 ⁇ m, number of bumps 328) mounted on the flip mounting device It was mounted with “FCB3” (trade name, manufactured by Panasonic) (mounting conditions: pressure head temperature 350 ° C., pressure bonding time 5 seconds, pressure pressure 0.5 MPa).
- FCB3 trade name, manufactured by Panasonic
- connection resistance value of the obtained semiconductor device using a multimeter (trade name “R6871E” manufactured by ADVANTEST).
- the connection resistance value is 10.0 to 13.5 ⁇
- the connectivity is good “A”
- the connection resistance value is 13.5 to 20 ⁇
- the connectivity is “B”
- the connection resistance value is greater than 20 ⁇ .
- the case where the connection resistance value was less than 10 ⁇ and the case of Open due to the connection failure (resistance value is not displayed) were all evaluated as the connection failure “C”.
- solder wettability evaluation> Regarding the semiconductor device manufactured by the above method, the cross section of the connection portion is observed, and the case where 90% or more of the solder is wet on the upper surface of the Cu wiring is “A” (good), and the case where the solder is less than 90%. It was evaluated as “B” (insufficient wetness).
- the film-like adhesive prepared in the example or comparative example is cut into a predetermined size (vertical 5 mm ⁇ horizontal 5 mm ⁇ thickness 0.045 mm), and silicon chip (vertical 5 mm ⁇ horizontal 5 mm ⁇ thickness 0.725 mm, oxide film coating) ) A glass epoxy substrate (thickness 0.02 mm) coated at 70 ° C.
- solder resist made by Taiyo Ink, trade name “AUS308”
- thermocompression tester manufactured by Hitachi Chemical Technoplant Co., Ltd.
- crimping head temperature 250 ° C. crimping time 5 seconds
- crimping pressure 0.5 MPa crimping pressure
- the tool height from the substrate is 0.05 mm and the tool speed is 0.05 mm / s.
- the adhesive force was measured.
- the film-like adhesive prepared in the example or comparative example is cut into a predetermined size (vertical 5 mm ⁇ horizontal 5 mm ⁇ thickness 0.045 mm), and silicon chip (vertical 5 mm ⁇ horizontal 5 mm ⁇ thickness 0.725 mm, oxide film coating) ) A glass epoxy substrate (thickness 0.02 mm) coated at 70 ° C.
- solder resist made by Taiyo Ink, trade name “AUS308”
- thermocompression tester manufactured by Hitachi Chemical Technoplant Co., Ltd.
- crimping head temperature 250 ° C. crimping time 5 seconds
- crimping pressure 0.5 MPa crimping pressure
- test sample was left in a constant temperature and humidity chamber (manufactured by ESPEC, PR-2KP) at 85 ° C. and 60% relative humidity for 48 hours, taken out, and then taken out on a hot plate at 260 ° C. (manufactured by DAGE). , Universal bond tester DAGE 4000), and the adhesive force was measured under the conditions of a tool height of 0.05 mm from the substrate and a tool speed of 0.05 mm / s.
- ⁇ Evaluation of reflow resistance> The semiconductor device manufactured by the method described in ⁇ Evaluation of initial connectivity> was subjected to conditions of 180 ° C., 6.75 MPa, 90 seconds using a sealing material (trade name “CEL9750ZHF10” manufactured by Hitachi Chemical Co., Ltd.). And after-curing at 175 ° C. for 5 hours in a clean oven (manufactured by ESPEC) to obtain a package. Next, this package was subjected to high temperature moisture absorption under JEDEC level 2 conditions, and then passed through an IR reflow furnace (manufactured by FURUKAWA ELECTRIC, trade name “SALAMANDER”) three times.
- a sealing material trade name “CEL9750ZHF10” manufactured by Hitachi Chemical Co., Ltd.
- the connectivity of the package after reflow was evaluated by a method similar to the above-described evaluation of initial connectivity, and the reflow resistance was evaluated.
- the case where there was no peeling and good connection was designated as “A”, and the case where peeling or poor connection occurred was designated as “B”.
- ⁇ TCT resistance evaluation connection reliability evaluation
- the semiconductor device manufactured by the method described in ⁇ Evaluation of initial connectivity> was subjected to conditions of 180 ° C., 6.75 MPa, 90 seconds using a sealing material (trade name “CEL9750ZHF10” manufactured by Hitachi Chemical Co., Ltd.). And after-curing at 175 ° C. for 5 hours in a clean oven (manufactured by ESPEC) to obtain a package. Next, this package was connected to a thermal cycle tester (trade name “THEMAL SHOCK CHAMBER NT1200” manufactured by ETAC), and 1 mA current was applied, 25 ° C. 2 minutes / ⁇ 55 ° C. 15 minutes / 25 ° C.
- the adhesives for semiconductors of Examples 1 and 2 have high adhesive strength at 260 ° C. after moisture absorption, and in the semiconductor device manufactured using the adhesive for semiconductors of Example 1, the generation of voids is sufficiently suppressed, and the solder It was confirmed that the wettability was good and the reflow resistance, TCT resistance and HAST resistance were excellent.
- SYMBOLS 10 Semiconductor chip, 15 ... Wiring (connection part), 20 ... Board
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Abstract
Description
本実施形態の半導体用接着剤は、エポキシ樹脂(以下、場合により「(a)成分」という。)、硬化剤(以下、場合により「(b)成分」という。)、及び、下記式(1-1)又は(1-2)で表される基を有する化合物(以下、場合により「(c)成分」という。)を含有する。
エポキシ樹脂としては、分子内に2個以上のエポキシ基を有するものであれば特に制限なく用いることができる。(a)成分として、例えば、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ナフタレン型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、フェノールアラルキル型エポキシ樹脂、ビフェニル型エポキシ樹脂、トリフェニルメタン型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂及び各種多官能エポキシ樹脂を使用することができる。これらは単独で又は2種以上の混合物として使用することができる。
(b)成分としては、例えば、フェノール樹脂系硬化剤、酸無水物系硬化剤、アミン系硬化剤、イミダゾール系硬化剤及びホスフィン系硬化剤が挙げられる。(b)成分がフェノール性水酸基、酸無水物、アミン類又はイミダゾール類を含むと、接続部に酸化膜が生じることを抑制するフラックス活性を示し、接続信頼性・絶縁信頼性を向上させることができる。以下、各硬化剤について説明する。
フェノール樹脂系硬化剤としては、分子内に2個以上のフェノール性水酸基を有するものであれば特に制限はなく、例えば、フェノールノボラック樹脂、クレゾールノボラック樹脂、フェノールアラルキル樹脂、クレゾールナフトールホルムアルデヒド重縮合物、トリフェニルメタン型多官能フェノール樹脂及び各種多官能フェノール樹脂を使用することができる。これらは単独で又は2種以上の混合物として使用することができる。
酸無水物系硬化剤としては、例えば、メチルシクロヘキサンテトラカルボン酸二無水物、無水トリメリット酸、無水ピロメリット酸、ベンゾフェノンテトラカルボン酸二無水物及びエチレングリコールビスアンヒドロトリメリテートを使用することができる。これらは単独で又は2種以上の混合物として使用することができる。
アミン系硬化剤としては、例えばジシアンジアミドを使用することができる。
イミダゾール系硬化剤としては、例えば、2-フェニルイミダゾール、2-フェニル-4-メチルイミダゾール、1-ベンジル-2-メチルイミダゾール、1-ベンジル-2-フェニルイミダゾール、1-シアノエチル-2-ウンデシルイミダゾール、1-シアノ-2-フェニルイミダゾール、1-シアノエチル-2-ウンデシルイミダゾールトリメリテイト、1-シアノエチル-2-フェニルイミダゾリウムトリメリテイト、2,4-ジアミノ-6-[2’-メチルイミダゾリル-(1’)]-エチル-s-トリアジン、2,4-ジアミノ-6-[2’-ウンデシルイミダゾリル-(1’)]-エチル-s-トリアジン、2,4-ジアミノ-6-[2’-エチル-4’-メチルイミダゾリル-(1’)]-エチル-s-トリアジン、2,4-ジアミノ-6-[2’-メチルイミダゾリル-(1’)]-エチル-s-トリアジンイソシアヌル酸付加体、2-フェニルイミダゾールイソシアヌル酸付加体、2-フェニル-4,5-ジヒドロキシメチルイミダゾール、2-フェニル-4-メチル-5-ヒドロキシメチルイミダゾール、及び、エポキシ樹脂とイミダゾール類の付加体が挙げられる。これらの中でも、優れた硬化性、保存安定性及び接続信頼性の観点から、1-シアノエチル-2-ウンデシルイミダゾール、1-シアノ-2-フェニルイミダゾール、1-シアノエチル-2-ウンデシルイミダゾールトリメリテイト、1-シアノエチル-2-フェニルイミダゾリウムトリメリテイト、2,4-ジアミノ-6-[2’-メチルイミダゾリル-(1’)]-エチル-s-トリアジン、2,4-ジアミノ-6-[2’-エチル-4’-メチルイミダゾリル-(1’)]-エチル-s-トリアジン、2,4-ジアミノ-6-[2’-メチルイミダゾリル-(1’)]-エチル-s-トリアジンイソシアヌル酸付加体、2-フェニルイミダゾールイソシアヌル酸付加体、2-フェニル-4,5-ジヒドロキシメチルイミダゾール及び2-フェニル-4-メチル-5-ヒドロキシメチルイミダゾールが好ましい。これらは単独で又は2種以上を併用して用いることができる。また、これらをマイクロカプセル化した潜在性硬化剤としてもよい。
ホスフィン系硬化剤としては、例えば、トリフェニルホスフィン、テトラフェニルホスホニウムテトラフェニルボレート、テトラフェニルホスホニウムテトラ(4-メチルフェニル)ボレート及びテトラフェニルホスホニウム(4-フルオロフェニル)ボレートが挙げられる。
(c)成分は、式(1-1)又は(1-2)で表される基を有する化合物(以下、場合により「フラックス化合物」という。)である。(c)成分はフラックス活性を有する化合物であり、本実施形態の半導体用接着剤において、フラックス剤として機能する。(c)成分としては、フラックス化合物の1種を単独で用いてもよく、フラックス化合物の2種以上を併用してもよい。
本実施形態の半導体用接着剤は、必要に応じて、重量平均分子量が10000以上の高分子成分((d)成分)を含有していてもよい。(d)成分を含有する半導体用接着剤は、耐熱性及びフィルム形成性に一層優れる。
装置名:HCL-8320GPC、UV-8320(製品名、東ソー社製)、又はHPLC-8020(製品名、東ソー社製)
カラム:TSKgel superMultiporeHZ-M×2、又は2pieces of GMHXL + 1piece of G-2000XL
検出器:RI又はUV検出器
カラム温度:25~40℃
溶離液:高分子成分が溶解する溶媒を選択する。例えば、THF(テトラヒドロフラン)、DMF(N,N-ジメチルホルムアミド)、DMA(N,N-ジメチルアセトアミド)、NMP(N-メチルピロリドン)、トルエン。尚、極性を有する溶剤を選択する場合は、リン酸の濃度を0.05~0.1mol/L(通常は0.06mol/L)、LiBrの濃度を0.5~1.0mol/L(通常は0.63mol/L)と調整してもよい。
流速:0.30~1.5mL/分
標準物質:ポリスチレン
本実施形態の半導体用接着剤は、必要に応じて、フィラー((e)成分)を含有していてもよい。(e)成分によって、半導体用接着剤の粘度、半導体用接着剤の硬化物の物性等を制御することができる。具体的には、(e)成分によれば、例えば、接続時のボイド発生の抑制、半導体用接着剤の硬化物の吸湿率の低減、等を図ることができる。
本実施形態の半導体用接着剤には、酸化防止剤、シランカップリング剤、チタンカップリング剤、レベリング剤、イオントラップ剤等の添加剤を配合してもよい。これらは1種を単独で又は2種以上を組み合わせて用いることができる。これらの配合量については、各添加剤の効果が発現するように適宜調整すればよい。
本実施形態の半導体装置について、図1及び2を用いて以下説明する。図1は、本発明の半導体装置の一実施形態を示す模式断面図である。図1(a)に示すように、半導体装置100は、互いに対向する半導体チップ10及び基板(回路配線基板)20と、半導体チップ10及び基板20の互いに対向する面にそれぞれ配置された配線15と、半導体チップ10及び基板20の配線15を互いに接続する接続バンプ30と、半導体チップ10及び基板20間の空隙に隙間なく充填された接着材料40とを有している。半導体チップ10及び基板20は、配線15及び接続バンプ30によりフリップチップ接続されている。配線15及び接続バンプ30は、接着材料40により封止されており外部環境から遮断されている。
本実施形態の半導体装置の製造方法について、図4を用いて以下説明する。図4は、本発明の半導体装置の製造方法の一実施形態を模式的に示す工程断面図である。
(a)エポキシ樹脂
・トリフェノールメタン骨格含有多官能固形エポキシ(ジャパンエポキシレジン株式会社製、商品名「EP1032H60」、以下「EP1032」という。)
・ビスフェノールF型液状エポキシ(ジャパンエポキシレジン株式会社製、商品名「YL983U」、以下「YL983」という。)
・柔軟性エポキシ(ジャパンエポキシレジン株式会社製、商品名「YL7175」、以下「YL7175」という。)
(b)硬化剤
・2,4-ジアミノ-6-[2’-メチルイミダゾリル-(1’)]-エチル-s-トリアジンイソシアヌル酸付加体(四国化成株式会社製、商品名「2MAOK-PW」、以下「2MAOK」という。)
(c)式(1-1)又は(1-2)で表される基を有する化合物からなるフラックス剤
・2,2-ジメチルグルタル酸(アルドリッチ社製、融点約83℃)
・3,3-ジメチルグルタル酸(アルドリッチ社製、融点約100℃)
(c’)他のフラックス剤
・グルタル酸(東京化成株式会社製、融点約98℃)
・コハク酸(アルドリッチ社製、融点約188℃)
・アジピン酸(東京化成株式会社製、融点約153℃)
・マロン酸(アルドリッチ社製、融点約135~137℃)
・1,3,5-ペンタントリカルボン酸(東京化成株式会社製、融点約113℃、以下「ペンタントリカルボン酸」という。)
(d)分子量10000以上の高分子成分
・フェノキシ樹脂(東都化成株式会社製、商品名「ZX1356」、Tg:約71℃、Mw:約63000、以下「ZX1356」という。)
(e)フィラー
(e-1)無機フィラー
・シリカフィラー(株式会社アドマテックス製、商品名「SE2050」、平均粒径0.5μm、以下「SE2050」という。)
・エポキシシラン処理シリカフィラー(株式会社アドマテックス製、商品名「SE2050-SEJ」、平均粒径0.5μm、以下「SE2050-SEJ」という。)
・アクリル表面処理ナノシリカフィラー(株式会社アドマテックス製、商品名「YA050C-SM」、平均粒径約50nm、以下「SMナノシリカ」という。)
(e-2)樹脂フィラー
・有機フィラー(ロームアンドハースジャパン株式会社製、商品名「EXL-2655」、コアシェルタイプ有機微粒子、以下「EXL-2655」という。)
装置名:HPLC-8020(製品名、東ソー社製)
カラム:2pieces of GMHXL + 1piece of G-2000XL
検出器:RI検出器
カラム温度:35℃
流速:1mL/分
標準物質:ポリスチレン
(実施例1)
エポキシ樹脂3g(「EP1032」を2.4g、「YL983」を0.45g、「YL7175」を0.15g)、硬化剤「2MAOK」0.1g、2,2-ジメチルグルタル酸0.11g(0.69mmol)、無機フィラー1.9g(「SE2050」を0.38g、「SE2050-SEJ」を0.38g、「SMナノシリカ」を1.14g)、樹脂フィラー(EXL-2655)0.25g、及びメチルエチルケトン(固形分量が63質量%になる量)を仕込み、直径0.8mmのビーズ及び直径2.0mmのビーズを固形分と同重量加え、ビーズミル(フリッチュ・ジャパン株式会社、遊星型微粉砕機P-7)で30分撹拌した。その後、フェノキシ樹脂(ZX1356)を1.7gを加え、再度ビーズミルで30分撹拌した後、撹拌に用いたビーズをろ過によって除去し、樹脂ワニスを得た。
使用した材料の組成を下記表1に記載のとおりに変更したこと以外は、実施例1と同様にして、実施例2のフィルム状接着剤及び比較例1~5のフィルム状接着剤を作製した。
実施例又は比較例で作製したフィルム状接着剤を所定のサイズ(縦8mm×横8mm×厚さ0.045mm)に切り抜き、ガラスエポキシ基板(ガラスエポキシ基材:420μm厚、銅配線:9μm厚)上に貼付し、はんだバンプ付き半導体チップ(チップサイズ:縦7.3mm×横7.3mm×厚さ0.15mm、バンプ高さ:銅ピラー+はんだ計約40μm、バンプ数328)をフリップ実装装置「FCB3」(パナソニック製、商品名)で実装した(実装条件:圧着ヘッド温度350℃、圧着時間5秒、圧着圧力0.5MPa)。これにより、図4と同様に上記ガラスエポキシ基板と、はんだバンプ付き半導体チップとがデイジーチェーン接続された半導体装置を作製した。
上記の方法で作製した半導体装置について、超音波映像診断装置(商品名「Insight-300」、インサイト製)により外観画像を撮り、スキャナGT-9300UF(EPSON社製、商品名)でチップ上の接着材料層(半導体用接着剤の硬化物からなる層)の画像を取り込み、画像処理ソフトAdobe Photoshopを用いて、色調補正、二階調化によりボイド部分を識別し、ヒストグラムによりボイド部分の占める割合を算出した。チップ上の接着材料部分の面積を100%として、ボイド発生率が10%以下の場合を「A」とし、10~20%を「B」とし、20%より多い場合を「C」として評価した。
上記の方法で作製した半導体装置について、接続部の断面を観察し、Cu配線の上面に90%以上はんだが濡れている場合を「A」(良好)、はんだの濡れが90%より小さい場合を「B」(濡れ不足)として評価した。
実施例又は比較例で作製したフィルム状接着剤を所定のサイズ(縦5mm×横5mm×厚さ0.045mm)に切り抜き、シリコンチップ(縦5mm×横5mm×厚さ0.725mm、酸化膜コーティング)上に70℃で貼付け、熱圧着試験機(日立化成テクノプラント株式会社製)を用いてソルダーレジスト(太陽インキ製、商品名「AUS308」)がコーティングされたガラスエポキシ基板(厚み0.02mm)に圧着した(圧着条件:圧着ヘッド温度250℃、圧着時間5秒、圧着圧力0.5MPa)。次に、クリーンオーブン(ESPEC製)中でアフターキュア(175℃、2h)して、試験サンプルとしての半導体装置を得た。
実施例又は比較例で作製したフィルム状接着剤を所定のサイズ(縦5mm×横5mm×厚さ0.045mm)に切り抜き、シリコンチップ(縦5mm×横5mm×厚さ0.725mm、酸化膜コーティング)上に70℃で貼付け、熱圧着試験機(日立化成テクノプラント株式会社製)を用いてソルダーレジスト(太陽インキ製、商品名「AUS308」)がコーティングされたガラスエポキシ基板(厚み0.02mm)に圧着した(圧着条件:圧着ヘッド温度250℃、圧着時間5秒、圧着圧力0.5MPa)。次に、クリーンオーブン(ESPEC製)中でアフターキュア(175℃、2h)して、試験サンプルとしての半導体装置を得た。
<初期接続性の評価>に記載した方法で作製した半導体装置を、封止材(日立化成工業株式会社製、商品名「CEL9750ZHF10」)を用いて、180℃、6.75MPa、90秒の条件でモールドし、クリーンオーブン(ESPEC製)中で175℃で5時間アフターキュアを行い、パッケージを得た。次に、このパッケージをJEDEC level 2条件で高温吸湿後、IRリフロー炉(FURUKAWA ELECTRIC製、商品名「SALAMANDER」)にパッケージを3回通過させた。リフロー後のパッケージの接続性について、上述の初期接続性の評価と同様の方法の方法で評価し、耐リフロー性の評価とした。剥離がなく接続良好な場合を「A」とし、剥離や接続不良が生じた場合を「B」とした。
<初期接続性の評価>に記載した方法で作製した半導体装置を、封止材(日立化成工業株式会社製、商品名「CEL9750ZHF10」)を用いて、180℃、6.75MPa、90秒の条件でモールドし、クリーンオーブン(ESPEC製)中で175℃で5時間アフターキュアを行い、パッケージを得た。次に、このパッケージを冷熱サイクル試験機(ETAC製、商品名「THERMAL SHOCK CHAMBER NT1200」)につなぎ、1mA電流を流し、25℃2分間/-55℃15分間/25℃2分間/125℃15分間/25℃2分間を1サイクルとして、1000サイクル繰り返した後の接続抵抗の変化を評価した。初期の抵抗値波形と比べて1000サイクル後も大きな変化がなかった場合を「A」、1Ω以上の差が生じた場合を「B」とした。
実施例又は比較例で作製したフィルム状接着剤(厚み:45μm)を、くし型電極評価TEG(日立化成工業株式会社製、配線ピッチ:50μm)にボイドなく貼付し、クリーンオーブン(ESPEC製)中、175℃で2時間キュアした。キュア後のサンプルを、加速寿命試験装置(HIRAYAMA社製、商品名「PL-422R8」、条件:130℃/85%RH/100時間、5V印加)に設置し、絶縁抵抗を測定した。100時間後の絶縁抵抗が108Ω以上であった場合を「A」とし、107Ω以上108Ω未満であった場合を「B」とし、107Ω未満であった場合を「C」として評価した。
Claims (19)
- 前記化合物が、カルボキシル基を2つ有する化合物である、請求項1に記載の半導体用接着剤。
- m1が0~8の整数であり、m2が0~7の整数である、請求項4に記載の半導体用接着剤。
- 前記化合物の融点が、150℃以下である、請求項1~5のいずれか一項に記載の半導体用接着剤。
- 前記電子供与性基が、炭素数1~10のアルキル基である、請求項1~6のいずれか一項に記載の半導体用接着剤。
- 前記化合物が、フラックス剤である、請求項1~7のいずれか一項に記載の半導体用接着剤。
- 重量平均分子量が10000以上の高分子成分を更に含有する、請求項1~8のいずれか一項に記載の半導体用接着剤。
- 形状がフィルム状である、請求項1~9のいずれか一項に記載の半導体用接着剤。
- 前記化合物が、カルボキシル基を2つ有する化合物である、請求項11に記載のフラックス剤。
- m1が0~8の整数であり、m2が0~7の整数である、請求項14に記載のフラックス剤。
- 前記電子供与性基が、炭素数1~10のアルキル基である、請求項11~15のいずれか一項に記載のフラックス剤。
- エポキシ樹脂及び硬化剤を含有する半導体用接着剤に配合されるフラックス剤である、請求項11~16のいずれか一項に記載のフラックス剤。
- 半導体チップ及び配線回路基板のそれぞれの接続部が互いに電気的に接続された半導体装置、又は、複数の半導体チップのそれぞれの接続部が互いに電気的に接続された半導体装置の製造方法であって、
前記接続部の少なくとも一部を、請求項1~10のいずれか一項に記載の半導体用接着剤を用いて封止する工程を備える、半導体装置の製造方法。 - 請求項18に記載の製造方法によって得られる、半導体装置。
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JP (1) | JP5867584B2 (ja) |
KR (1) | KR20140116216A (ja) |
CN (1) | CN104185666A (ja) |
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Cited By (2)
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JP2015030745A (ja) * | 2013-07-31 | 2015-02-16 | 住友ベークライト株式会社 | 樹脂組成物、半導体装置、多層回路基板および電子部品 |
JP2022000918A (ja) * | 2017-06-07 | 2022-01-04 | 昭和電工マテリアルズ株式会社 | 半導体用フィルム状接着剤、半導体装置の製造方法及び半導体装置 |
Families Citing this family (2)
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JP5952849B2 (ja) | 2014-03-25 | 2016-07-13 | 岡村製油株式会社 | フラックス及びソルダペースト |
MY186938A (en) | 2015-11-04 | 2021-08-26 | Lintec Corp | Curable resin film and first protective film forming sheet |
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Also Published As
Publication number | Publication date |
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CN104185666A (zh) | 2014-12-03 |
JP5867584B2 (ja) | 2016-02-24 |
JPWO2013125087A1 (ja) | 2015-07-30 |
US20150035175A1 (en) | 2015-02-05 |
TW201335302A (zh) | 2013-09-01 |
KR20140116216A (ko) | 2014-10-01 |
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